JPH1187802A - Magnetic resistance effect material - Google Patents

Magnetic resistance effect material

Info

Publication number
JPH1187802A
JPH1187802A JP9244014A JP24401497A JPH1187802A JP H1187802 A JPH1187802 A JP H1187802A JP 9244014 A JP9244014 A JP 9244014A JP 24401497 A JP24401497 A JP 24401497A JP H1187802 A JPH1187802 A JP H1187802A
Authority
JP
Japan
Prior art keywords
layer
underlayer
metal
ferromagnetic
foundation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9244014A
Other languages
Japanese (ja)
Inventor
Takuji Umemoto
卓史 梅本
Atsushi Maeda
篤志 前田
Satoru Oikawa
悟 及川
Koji Yamano
耕治 山野
Toshio Tanuma
俊雄 田沼
Minoru Kume
実 久米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9244014A priority Critical patent/JPH1187802A/en
Publication of JPH1187802A publication Critical patent/JPH1187802A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve magnetic resistance change rate, and at the same time to reduce the magnetism-retaining force of a magnetic field reverse layer, by laminating a second foundation layer being formed by metal with face-centered solid structure on a first foundation layer being formed by one type of metal being selected from Ti, Hf, V, Nb, and Ta as a foundation layer. SOLUTION: A first foundation layer 2 is formed by one type of metal being selected from a group consisting of Ti, Hf, V, Nb, and Ta on a substrate 1, and a second foundation layer 3 is formed by metal with face-centered solid structure on the first foundation layer 2. Furthermore, CoFe, Cu, CoFe, and IrMn layers that are ferromagnetic, non-magnetic conductive, ferromagnetic, and antiferromagnetic layers 4, 5, 6, and 7, respectively, are successively laminated for forming, thus increasing a magnetic resistance change rate, reducing the magnetism-retaining force of a free layer, and hence improving magnetic sensitivity.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、磁気抵抗効果材料
に関するものであり、特に、強磁性層、非磁性導電層、
強磁性層、及び反強磁性層を積層した構造を有するスピ
ンバルブ型の磁気抵抗効果材料に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect material, and more particularly, to a ferromagnetic layer, a non-magnetic conductive layer,
The present invention relates to a spin valve type magnetoresistive material having a structure in which a ferromagnetic layer and an antiferromagnetic layer are stacked.

【０００２】[0002]

【従来の技術】ハードディスク（ＨＤＤ）に用いる磁気
ヘッドとして、近年、磁気抵抗効果型（ＭＲ）ヘッドが
注目されている。ＭＲヘッドは、外部磁界の変化を電気
伝導率の変化により検出するヘッドであり、従来の誘導
型磁気ヘッドに比べ高い磁界感度を有し、高密度記録化
を図ることができる。このようなＭＲヘッドに用いる磁
気抵抗効果材料としては、従来より、パーマロイ等の３
ｄ遷移金属合金が採用されており、磁化方向の変化に対
応した抵抗の増減（異方性磁気抵抗効果：ＡＭＲ）で信
号を検出している。2. Description of the Related Art In recent years, a magnetoresistive (MR) head has attracted attention as a magnetic head used for a hard disk (HDD). The MR head is a head that detects a change in an external magnetic field by a change in electric conductivity, has a higher magnetic field sensitivity than a conventional inductive magnetic head, and can achieve high-density recording. As a magnetoresistive effect material used for such an MR head, conventionally, a material such as Permalloy is used.
A d-transition metal alloy is employed, and a signal is detected by increasing or decreasing the resistance (anisotropic magnetoresistance effect: AMR) according to the change in the magnetization direction.

【０００３】しかしながら、最近、この従来のＡＭＲに
比べ１桁高い抵抗変化率を示す巨大磁気抵抗効果（ＧＭ
Ｒ）型の磁気抵抗効果材料が見出され、注目されてい
る。ＧＭＲ材料は、一般に、強磁性層と非磁性導電層と
を積層した多層膜構造を有しており、（１）反強磁性結
合型、（２）保磁力差型、及び（３）スピンバルブ型と
呼ばれる３種類の材料系が知られている。However, recently, the giant magnetoresistive effect (GM) showing an order of magnitude higher resistance change rate than this conventional AMR has
An R) type magnetoresistive material has been found and attracted attention. The GMR material generally has a multilayer structure in which a ferromagnetic layer and a non-magnetic conductive layer are laminated, and includes (1) an antiferromagnetic coupling type, (2) a coercive force difference type, and (3) a spin valve. Three types of material systems called molds are known.

【０００４】スピンバルブ型のＧＭＲ材料は、強磁性
層、非磁性導電層、強磁性層、及び反強磁性層を積層し
た構造を有しており、反強磁性層が一方の強磁性層と磁
気的に結合し、該強磁性層の磁化をピン留めしている。
このため、広い磁界領域で反平行磁化状態が安定化して
おり、磁気抵抗変化率が高く、かつ磁界感度が高いとこ
ろから、最も実用化に近いＧＭＲ材料とされている。A spin valve type GMR material has a structure in which a ferromagnetic layer, a non-magnetic conductive layer, a ferromagnetic layer, and an antiferromagnetic layer are stacked, and the antiferromagnetic layer is in contact with one ferromagnetic layer. It is magnetically coupled to pin the magnetization of the ferromagnetic layer.
Therefore, the antiparallel magnetization state is stabilized in a wide magnetic field region, the magnetoresistance ratio is high, and the magnetic field sensitivity is high.

【０００５】[0005]

【発明が解決しようとする課題】このようなスピンバル
ブ型のＧＭＲ材料においては、高い磁界検出感度を得る
ため、ＭＲ比が高く、かつ磁界反転（フリー）層の保磁
力（Ｈｃ）が低いことが望ましく、このような観点から
種々の検討がなされている。In such a spin valve type GMR material, in order to obtain high magnetic field detection sensitivity, the MR ratio is high and the coercive force (Hc) of the magnetic field reversal (free) layer is low. However, various studies have been made from such a viewpoint.

【０００６】しかしながら、このようなスピンバルブ型
のＧＭＲ材料の下地層については、十分な検討がなされ
ておらず、優れたＭＲ特性を示す下地層を含めた磁気抵
抗効果材料の検討は十分にはなされていない。However, the underlayer of such a spin valve type GMR material has not been sufficiently studied, and the study of a magnetoresistance effect material including the underlayer exhibiting excellent MR characteristics has not been sufficiently performed. Not done.

【０００７】本発明の目的は、ＭＲ比が高く、かつ磁界
反転層の保磁力の低いスピンバルブ型の磁気抵抗効果材
料の下地層を含めた新規な構造を提供することにある。An object of the present invention is to provide a novel structure including an underlayer of a spin valve type magnetoresistive material having a high MR ratio and a low coercive force of a magnetic field reversal layer.

【０００８】[0008]

【課題を解決するための手段】本発明の磁気抵抗効果材
料は、下地層の上に、強磁性層、非磁性導電層、強磁性
層、及び反強磁性層をこの順序で積層した構造を有する
スピンバルブ型の磁気抵抗効果材料であり、下地層とし
て、Ｔｉ、Ｈｆ、Ｖ、Ｎｂ、及びＴａからなるグループ
より選ばれる少なくとも１種の金属または該金属を主成
分とする合金から形成される第１の下地層の上に、面心
立方構造を有する金属または合金から形成される第２の
下地層を積層した下地層を用いることを特徴とする磁気
抵抗効果材料である。The magnetoresistive effect material of the present invention has a structure in which a ferromagnetic layer, a nonmagnetic conductive layer, a ferromagnetic layer, and an antiferromagnetic layer are laminated in this order on an underlayer. A spin-valve magnetoresistive material having at least one metal selected from the group consisting of Ti, Hf, V, Nb, and Ta, or an alloy containing the metal as a main component. A magnetoresistive effect material characterized by using an underlayer in which a second underlayer formed of a metal or an alloy having a face-centered cubic structure is laminated on the first underlayer.

【０００９】本発明において、第２の下地層を形成する
面心立方構造を有する金属または合金としては、Ｃｕ、
Ｐｔ、ＮｉＦｅ、ＣｏＦｅ、ＮｉＣｏ、及びＮｉＣｏＦ
ｅなどが挙げられる。なお、第２の下地層として、強磁
性体であるＮｉＦｅ、ＣｏＦｅ、ＮｉＣｏ、及びＮｉＣ
ｏＦｅ等の強磁性体を用いる場合には、その上に形成さ
れる強磁性層と異なる種類の強磁性体が用いられる。In the present invention, the metal or alloy having a face-centered cubic structure forming the second underlayer is Cu,
Pt, NiFe, CoFe, NiCo, and NiCoF
e. As the second underlayer, ferromagnetic materials such as NiFe, CoFe, NiCo, and NiC
When a ferromagnetic material such as oFe is used, a different type of ferromagnetic material from the ferromagnetic layer formed thereon is used.

【００１０】本発明における下地層は、下方の強磁性層
と接するように設けられるものである。従って、本発明
における下地層は、反強磁性層と磁気的に結合していな
い、フリーな強磁性層の下地層として形成される。本発
明において下地層を構成する第１の下地層及び第２の下
地層の膜厚は、特に限定されるものではないが、下地層
全体としては、５〜１５ｎｍ程度であることが好まし
い。また第２の下地層としては、３ｎｍ以下の膜厚であ
ることが好ましく、さらには、３ｎｍ〜１ｎｍの範囲内
の膜厚であることが好ましい。The underlayer according to the present invention is provided so as to be in contact with the lower ferromagnetic layer. Therefore, the underlayer in the present invention is formed as a free underlayer of a ferromagnetic layer that is not magnetically coupled to the antiferromagnetic layer. In the present invention, the thicknesses of the first underlayer and the second underlayer constituting the underlayer are not particularly limited, but the total thickness of the underlayer is preferably about 5 to 15 nm. The thickness of the second underlayer is preferably 3 nm or less, and more preferably, 3 nm to 1 nm.

【００１１】本発明の磁気抵抗効果材料に用いられる強
磁性層は、強磁性体から形成された層であれば特に限定
されるものではなく、例えば、ＮｉＦｅ層、Ｃｏ層、Ｃ
ｏＮｉＦｅ層、ＣｏＦｅ層等の強磁性層が挙げられる。
強磁性層の膜厚は、一般に１〜１０ｎｍ程度である。The ferromagnetic layer used in the magnetoresistive material of the present invention is not particularly limited as long as it is formed of a ferromagnetic material. For example, a NiFe layer, a Co layer, a C layer
Ferromagnetic layers, such as an oNiFe layer and a CoFe layer, are mentioned.
The thickness of the ferromagnetic layer is generally about 1 to 10 nm.

【００１２】本発明の磁気抵抗効果材料に用いられる非
磁性導電層は、非磁性体であり、かつ導電性に優れたも
のであれば特に限定されるものではなく、例えば、Ｃｕ
層、Ａｇ層などが挙げられる。非磁性導電層の膜厚は、
一般に１〜５ｎｍ程度である。The non-magnetic conductive layer used in the magneto-resistance effect material of the present invention is not particularly limited as long as it is a non-magnetic material and has excellent conductivity.
And an Ag layer. The thickness of the nonmagnetic conductive layer is
Generally, it is about 1 to 5 nm.

【００１３】本発明の磁気抵抗効果材料に用いられる反
強磁性層は、反強磁性体から形成された層であれば特に
限定されるものではなく、例えば、ＦｅＭｎ層、ＩｒＭ
ｎ層、及びＮｉＭｎ層などや、ＮｉＯ層、ＣｏＯ層、及
びＦｅ2 Ｏ3 などの酸化物系反強磁性層などが挙げられ
る。反強磁性層の膜厚は、一般に５〜２５ｎｍ程度であ
る。The antiferromagnetic layer used for the magnetoresistance effect material of the present invention is not particularly limited as long as it is a layer formed of an antiferromagnetic material. For example, an FeMn layer, an IrM
Examples include an n-layer, a NiMn layer, an NiO layer, a CoO layer, and an oxide-based antiferromagnetic layer such as Fe 2 O 3 . The thickness of the antiferromagnetic layer is generally about 5 to 25 nm.

【００１４】本発明の磁気抵抗効果材料は、一般に基板
上に形成されるが、基板の材質は非磁性であれば特に限
定されるものではなく、例えば、Ｓｉ、ＴｉＣ、Ａｌ2
Ｏ3、及びガラスなどの基板が用いられる。The magnetoresistive material of the present invention is generally formed on a substrate, but the material of the substrate is not particularly limited as long as it is non-magnetic. For example, Si, TiC, Al 2
Substrates such as O 3 and glass are used.

【００１５】本発明に従い、第１の下地層及び第２の下
地層を積層した下地層の上に、強磁性層、非磁性導電
層、強磁性層、及び反強磁性層を積層することにより、
ＭＲ比が高く、かつフリー層の保磁力の低いスピンバル
ブ型の磁気抵抗効果材料とすることができる。第１の下
地層及び第２の下地層の積層膜を下地層として用いるこ
とにより、上記本発明の効果が得られる理由について詳
細は明らかでないが、第１の下地層が、基板及び第２の
下地層に対する濡れ性を有しており、かつ層状成長しや
すい膜質を有しているため、その上に、より良好な膜質
の面心立方構造の第２の下地層を形成させることがで
き、このような良好な膜質の第２の下地層の上に強磁性
層を形成することにより、強磁性層の結晶構造が良好に
制御され、より良好なＭＲ特性をＭＲ積層膜に付与する
ことができるものと思われる。According to the present invention, a ferromagnetic layer, a nonmagnetic conductive layer, a ferromagnetic layer, and an antiferromagnetic layer are laminated on an underlayer in which a first underlayer and a second underlayer are laminated. ,
A spin-valve magnetoresistive material having a high MR ratio and a low coercive force of the free layer can be obtained. The reason why the effect of the present invention can be obtained by using the stacked film of the first and second underlayers as the underlayer is not clear, but the first underlayer is composed of the substrate and the second underlayer. Since it has wettability to the underlayer and has a film quality that facilitates layer growth, a second underlayer having a face-centered cubic structure with better film quality can be formed thereon. By forming a ferromagnetic layer on such a second underlayer having good film quality, the crystal structure of the ferromagnetic layer can be controlled well, and better MR characteristics can be imparted to the MR laminated film. It seems possible.

【００１６】[0016]

【発明の実施の形態】図１は、本発明に従う一実施例の
磁気抵抗効果材料を示す断面図である。図１を参照し
て、磁気抵抗効果材料の積層膜は、基板１上に形成され
ている。本実施例では、基板１として、Ｓｉ基板が用い
られている。基板１の上には、第１の下地層２（膜厚
６．５ｎｍ）が形成されており、第１の下地層２の上に
第２の下地層３（膜厚１．５ｎｍ）が形成されている。
第２の下地層３の上には、強磁性層４としてのＣｏ90Ｆ
ｅ10層（膜厚５ｎｍ）が形成され、その上には非磁性導
電層５としてのＣｕ層（膜厚２．５ｎｍ）が形成されて
いる。非磁性導電層５の上には強磁性層６としてのＣｏ
90Ｆｅ10層（膜厚３ｎｍ）が形成され、さらにその上に
は反強磁性層７としてのＩｒ25Ｍｎ75層（膜厚１５ｎ
ｍ）が形成されている。FIG. 1 is a sectional view showing a magnetoresistive material according to one embodiment of the present invention. With reference to FIG. 1, a laminated film of a magnetoresistive effect material is formed on a substrate 1. In the present embodiment, a Si substrate is used as the substrate 1. A first underlayer 2 (6.5 nm in thickness) is formed on a substrate 1, and a second underlayer 3 (1.5 nm in thickness) is formed on the first underlayer 2. Have been.
On the second underlayer 3, Co 90 F as the ferromagnetic layer 4 is formed.
e 10 layers (thickness 5 nm) is formed, Cu layer as the non-magnetic conductive layer 5 (film thickness 2.5 nm) is formed thereon. On the nonmagnetic conductive layer 5, Co as a ferromagnetic layer 6 is formed.
A 90 Fe 10 layer (thickness 3 nm) is formed, and an Ir 25 Mn 75 layer (thickness 15 n) as the antiferromagnetic layer 7 is further formed thereon.
m) is formed.

【００１７】第１の下地層２の材料としてＴｉ、Ｈｆ、
Ｖ、Ｎｂ、及びＴａを用い、第２の下地層３の材料とし
てＣｕ、Ｐｔ、及びＮｉ80Ｆｅ20を用い、表１及び表２
に示す組み合わせで、図１に示す磁気抵抗効果材料にお
ける第１の下地層２及び第２の下地層３を形成し、得ら
れた磁気抵抗効果材料について、ＭＲ比及びフリー層の
保磁力（Ｈｃ）を測定した。ＭＲ比の測定結果を表１
に、Ｈｃの測定結果を表２に示す。また、比較として、
第１の下地層または第２の下地層を形成していない磁気
抵抗効果材料を作製し、それらについてもＭＲ比及びＨ
ｃを測定し、測定結果を表１及び表２に示す。As a material of the first underlayer 2, Ti, Hf,
Tables 1 and 2 were obtained by using V, Nb, and Ta, and using Cu, Pt, and Ni 80 Fe 20 as the material of the second underlayer 3.
The first underlayer 2 and the second underlayer 3 in the magnetoresistive material shown in FIG. 1 are formed by the combination shown in FIG. 1, and the MR ratio and the coercive force (Hc ) Was measured. Table 1 shows the measurement results of the MR ratio.
Table 2 shows the measurement results of Hc. Also, as a comparison,
A magnetoresistive material having no first or second underlayer formed therein is manufactured, and the MR ratio and H
c was measured, and the measurement results are shown in Tables 1 and 2.

【００１８】[0018]

【表１】 [Table 1]

【００１９】[0019]

【表２】 [Table 2]

【００２０】表１の結果から明らかなように、本発明に
従い第１の下地層及び第２の下地層を形成した磁気抵抗
効果材料は、比較の磁気抵抗効果材料に比べ、いずれも
高いＭＲ比を示している。また、表２の結果から明らか
なように、本発明に従い第１の下地層及び第２の下地層
を形成した磁気抵抗効果材料は、比較の磁気抵抗効果材
料に比べ、フリー層の保磁力（Ｈｃ）が小さく、良好な
磁界感度を示すことがわかる。As is evident from the results in Table 1, the magnetoresistance effect material formed with the first and second underlayers according to the present invention has a higher MR ratio than the comparative magnetoresistance effect material. Is shown. Further, as is clear from the results in Table 2, the magnetoresistance effect material in which the first underlayer and the second underlayer according to the present invention are formed has a higher coercive force of the free layer than the comparative magnetoresistance effect material. It can be seen that Hc) is small and good magnetic field sensitivity is exhibited.

【００２１】本発明の磁気抵抗効果材料は、上記実施例
に限定されるものではなく、第１の下地層として、Ｔ
ｉ、Ｈｆ、Ｖ、Ｎｂ、またはＴａを主成分とする合金層
を形成してもよい。また、第２の下地層として、その他
の面心立方構造を有する金属または合金層を形成しても
よい。The magnetoresistive effect material of the present invention is not limited to the above-described embodiment, but may be used as a first underlayer as a T underlayer.
An alloy layer containing i, Hf, V, Nb, or Ta as a main component may be formed. Further, a metal or alloy layer having another face-centered cubic structure may be formed as the second underlayer.

【００２２】また、本発明の磁気抵抗効果材料における
各層の膜厚は、上記実施例に限定されるものではなく、
用途及び使用する材料等に応じて膜厚を設定することが
できる。さらに、本発明の磁気抵抗効果材料において
は、反強磁性層の上に、例えばＺｒなどからなる保護層
を形成してもよい。The thickness of each layer in the magnetoresistive material of the present invention is not limited to the above embodiment.
The film thickness can be set according to the use and the material to be used. Further, in the magnetoresistive effect material of the present invention, a protective layer made of, for example, Zr may be formed on the antiferromagnetic layer.

【００２３】[0023]

【発明の効果】本発明に従えば、ＭＲ比が高く、かつフ
リー層の保磁力が低く、良好な磁界感度を示すスピンバ
ルブ型の磁気抵抗効果材料とすることができる。従っ
て、ＭＲヘッドとして用いた場合に、高い出力及び高い
磁界感度を有し、高密度記録化を図ることができる。According to the present invention, a spin-valve magnetoresistive material having a high MR ratio, a low coercive force of the free layer, and excellent magnetic field sensitivity can be obtained. Therefore, when used as an MR head, it has high output and high magnetic field sensitivity and can achieve high-density recording.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に従う一実施例の磁気抵抗効果材料を示
す断面図。FIG. 1 is a sectional view showing a magnetoresistive effect material according to one embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１…基板 ２…第１の下地層 ３…第２の下地層 ４…強磁性層 ５…非磁性導電層 ６…強磁性層 ７…反強磁性層 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... 1st underlayer 3 ... 2nd underlayer 4 ... Ferromagnetic layer 5 ... Nonmagnetic conductive layer 6 ... Ferromagnetic layer 7 ... Antiferromagnetic layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 山野 耕治 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 田沼 俊雄 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 久米 実 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Koji Yamano, Inventor 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Toshio Tanuma 2-chome, Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Minoru Kume 2-5-5 Keihan Hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 下地層の上に、強磁性層、非磁性導電
層、強磁性層、及び反強磁性層をこの順次で積層した構
造を有するスピンバルブ型の磁気抵抗効果材料におい
て、 前記下地層として、Ｔｉ、Ｈｆ、Ｖ、Ｎｂ、及びＴａか
らなるグループより選ばれる少なくとも１種の金属また
は該金属を主成分とする合金から形成される第１の下地
層の上に、面心立方構造を有する金属または合金から形
成される第２の下地層を積層した下地層を用いることを
特徴とする磁気抵抗効果材料。1. A spin valve type magnetoresistive material having a structure in which a ferromagnetic layer, a nonmagnetic conductive layer, a ferromagnetic layer, and an antiferromagnetic layer are sequentially stacked on an underlayer. As a base layer, a face-centered cubic structure is formed on a first underlayer formed of at least one metal selected from the group consisting of Ti, Hf, V, Nb, and Ta or an alloy containing the metal as a main component. 1. A magnetoresistive effect material comprising: a base layer formed by laminating a second base layer formed of a metal or an alloy having the following. 【請求項２】 前記第２の下地層を形成する面心立方構
造を有する金属または合金が、Ｃｕ、Ｐｔ、ＮｉＦｅ、
ＣｏＦｅ、ＮｉＣｏ、またはＮｉＣｏＦｅである請求項
１に記載の磁気抵抗効果材料。2. A metal or alloy having a face-centered cubic structure forming the second underlayer is made of Cu, Pt, NiFe,
The magnetoresistance effect material according to claim 1, wherein the material is CoFe, NiCo, or NiCoFe.
JP9244014A 1997-09-09 1997-09-09 Magnetic resistance effect material Pending JPH1187802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9244014A JPH1187802A (en) 1997-09-09 1997-09-09 Magnetic resistance effect material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9244014A JPH1187802A (en) 1997-09-09 1997-09-09 Magnetic resistance effect material

Publications (1)

Publication Number Publication Date
JPH1187802A true JPH1187802A (en) 1999-03-30

Family

ID=17112435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9244014A Pending JPH1187802A (en) 1997-09-09 1997-09-09 Magnetic resistance effect material

Country Status (1)

Country Link
JP (1) JPH1187802A (en)

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