JPH10270776A - Method for manufacturing magnetoresistance effect film - Google Patents
Method for manufacturing magnetoresistance effect filmInfo
- Publication number
- JPH10270776A JPH10270776A JP9071790A JP7179097A JPH10270776A JP H10270776 A JPH10270776 A JP H10270776A JP 9071790 A JP9071790 A JP 9071790A JP 7179097 A JP7179097 A JP 7179097A JP H10270776 A JPH10270776 A JP H10270776A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- ferromagnetic layer
- hydrogen gas
- laminated film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 13
- 230000000694 effects Effects 0.000 title claims description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 77
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 72
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 230000005415 magnetization Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 142
- 239000010408 film Substances 0.000 description 85
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 102100021243 G-protein coupled receptor 182 Human genes 0.000 description 1
- 101001040797 Homo sapiens G-protein coupled receptor 182 Proteins 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁性層を含む積層
膜から構成される、いわゆる巨大磁気抵抗効果を示す磁
気抵抗効果膜の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magneto-resistance effect film having a so-called giant magneto-resistance effect, which is composed of a laminated film including a magnetic layer.
【０００２】[0002]
【従来の技術】ハードディスク（ＨＤＤ）に用いる磁気
ヘッドとして、近年、磁気抵抗効果型（ＭＲ）ヘッドが
注目されている。ＭＲヘッドは、外部磁界の変化によっ
て電気伝導率が変化する磁気抵抗効果膜を用いたヘッド
であり、従来の誘導型磁気ヘッドに比べ高い磁界感度を
有し、高密度記録化を図ることができる。このようなＭ
Ｒヘッドに用いる磁気抵抗効果膜としては、従来より、
パーマロイ等の合金膜が用いられており、磁化方向の変
化に対応した抵抗の増減（異方性磁気抵抗効果：ＡＭ
Ｒ）により外部磁界の変化を検出している。2. Description of the Related Art In recent years, a magnetoresistive (MR) head has attracted attention as a magnetic head used for a hard disk (HDD). The MR head is a head using a magnetoresistive film whose electric conductivity changes according to a change in an external magnetic field. The MR head has higher magnetic field sensitivity than a conventional inductive magnetic head and can achieve high density recording. . Such M
Conventionally, as a magnetoresistive film used for an R head,
An alloy film such as permalloy is used, and the resistance is increased or decreased in accordance with the change in the magnetization direction (anisotropic magnetoresistance effect: AM
R) detects a change in the external magnetic field.
【０００３】しかしながら、最近、この従来のＡＭＲに
比べより高い抵抗変化率を示す巨大磁気抵抗効果（ＧＭ
Ｒ）型の磁気抵抗効果膜が見出され、注目されている。
ＧＭＲ型の磁気抵抗効果膜としては、Ｃｏなどの強磁性
層とＣｕなどの非磁性導電層とを繰り返し積層し強磁性
層間を反強磁性結合させた人工格子型、非磁性導電層を
保磁力の異なる一対の強磁性層で挟んだ積層構造を有す
る保磁力差型、及び非磁性導電層を一対の強磁性層で挟
み、一方の強磁性層の上に反強磁性層を設け反強磁性層
との磁気的結合によって一方の強磁性層をピン留めした
スピンバルブ型などの磁気抵抗効果膜が知られている。However, recently, the giant magnetoresistive effect (GM) showing a higher rate of change in resistance than this conventional AMR has
An R) type magnetoresistive film has been found and attracted attention.
The GMR type magnetoresistive film is an artificial lattice type in which a ferromagnetic layer such as Co and a nonmagnetic conductive layer such as Cu are repeatedly laminated and the ferromagnetic layers are antiferromagnetically coupled. Coercive force difference type with a laminated structure sandwiched between a pair of different ferromagnetic layers, and a nonmagnetic conductive layer sandwiched between a pair of ferromagnetic layers, and an antiferromagnetic layer provided on one ferromagnetic layer 2. Description of the Related Art A magnetoresistive film such as a spin valve type in which one ferromagnetic layer is pinned by magnetic coupling with a layer is known.
【０００４】[0004]
【発明が解決しようとする課題】このようなＧＭＲ積層
膜を用いたＭＲヘッドの実用化に向けて、高密度記録化
を達成するため、高い磁界検出感度を有するＧＭＲ型の
磁気抵抗効果膜の研究開発が盛んになされている。しか
しながら、従来は、磁気抵抗効果膜を構成する磁性膜の
合金組成や積層膜の積層構造についての検討がほとんど
であり、磁気抵抗効果膜の薄膜形成方法の観点からの検
討はほとんどなされていない。In order to achieve high-density recording for the practical use of an MR head using such a GMR laminated film, a GMR type magnetoresistive film having a high magnetic field detection sensitivity has been developed. Research and development are being actively pursued. However, conventionally, almost all studies have been made on the alloy composition of the magnetic film constituting the magnetoresistive film and the laminated structure of the laminated films, and there has been almost no study from the viewpoint of the method of forming a thin film of the magnetoresistive film.
【０００５】本発明の目的は、このようなＧＭＲ型磁気
抵抗効果膜における磁性膜の形成方法に着目し、高い磁
界感度を有する磁気抵抗効果膜の製造方法を提供するこ
とにある。An object of the present invention is to provide a method of manufacturing a magnetoresistive film having high magnetic field sensitivity, focusing on a method of forming a magnetic film in such a GMR type magnetoresistive film.
【０００６】[0006]
【課題を解決するための手段】本発明は、磁性層を含む
積層膜から構成される磁気抵抗効果膜を製造する方法で
あり、積層膜のうちの少なくとも１つの磁性層を、水素
ガスを含む雰囲気中でスパッタリング法により形成する
ことを特徴としている。SUMMARY OF THE INVENTION The present invention is a method of manufacturing a magnetoresistive film comprising a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film contains hydrogen gas. It is characterized by being formed by a sputtering method in an atmosphere.
【０００７】本発明においては、水素ガスを含む雰囲気
中で、積層膜のうちの少なくとも１つの磁性層をスパッ
タリング法により形成する。水素ガスを含む雰囲気とし
ては、例えば、水素ガスを含む不活性ガス雰囲気を用い
ることができる。不活性ガスとしては、Ｘｅ、Ｋｒ、Ａ
ｒ、Ｎｅ、Ｈｅなどを用いることができる。水素ガスの
含有量は、不活性ガスに対して、例えば０．１体積％〜
３０体積％の範囲で適宜選択される。In the present invention, at least one magnetic layer of the laminated film is formed by a sputtering method in an atmosphere containing hydrogen gas. As the atmosphere containing hydrogen gas, for example, an inert gas atmosphere containing hydrogen gas can be used. Xe, Kr, A as the inert gas
r, Ne, He or the like can be used. The content of the hydrogen gas is, for example, 0.1% by volume to the inert gas.
It is appropriately selected within a range of 30% by volume.
【０００８】スパッタリング法としては、種々のスパッ
タリング法を採用することができ、例えば、イオンビー
ムスパッタリング法、ＲＦスパッタリング法、ＤＣマグ
ネトロンスパッタリング法などのスパッタリング法を用
いることができる。As the sputtering method, various sputtering methods can be employed. For example, a sputtering method such as an ion beam sputtering method, an RF sputtering method, and a DC magnetron sputtering method can be used.
【０００９】スピンバルブ型の磁気抵抗効果膜は、一般
に、第１の強磁性層、非磁性導電層、第２の強磁性層、
及び反強磁性層をこの順序で、あるいは逆の順序で積層
した構造を有しており、第２の強磁性層が反強磁性層と
の磁気的結合によってピン留めされた積層膜である。本
発明においては、このような積層膜のうちの、少なくと
も１つの強磁性層または反強磁性層を水素ガスを含む雰
囲気中でスパッタリング法により形成する。また、この
場合において、磁性層以外の非磁性導電層を、水素ガス
を含む雰囲気中でスパッタリング法により形成してもよ
い。A spin-valve type magnetoresistive film generally comprises a first ferromagnetic layer, a non-magnetic conductive layer, a second ferromagnetic layer,
And the antiferromagnetic layer is laminated in this order or in the reverse order, and the second ferromagnetic layer is a laminated film pinned by magnetic coupling with the antiferromagnetic layer. In the present invention, at least one ferromagnetic layer or antiferromagnetic layer in such a laminated film is formed by a sputtering method in an atmosphere containing hydrogen gas. In this case, a nonmagnetic conductive layer other than the magnetic layer may be formed by a sputtering method in an atmosphere containing hydrogen gas.
【００１０】第１の強磁性層を、水素ガスを含む雰囲気
中でスパッタリング法により形成することにより、第１
の強磁性層の保磁力（Ｈｃ）を小さくし、磁気抵抗効果
膜の磁界感度を向上させることができる。また、第２の
強磁性層及び反強磁性層の少なくとも何れか一方を、水
素ガスを含む雰囲気でスパッタリング法により形成する
ことにより、第２の強磁性層と反強磁性層の間の交換結
合磁界（Ｈｕａ）を大きくすることができる。従って、
磁界検出における安定性の高い磁気抵抗効果膜とするこ
とができる。The first ferromagnetic layer is formed by a sputtering method in an atmosphere containing a hydrogen gas, whereby the first ferromagnetic layer is formed.
, The coercive force (Hc) of the ferromagnetic layer can be reduced, and the magnetic field sensitivity of the magnetoresistive film can be improved. In addition, by forming at least one of the second ferromagnetic layer and the antiferromagnetic layer by a sputtering method in an atmosphere containing hydrogen gas, exchange coupling between the second ferromagnetic layer and the antiferromagnetic layer is achieved. The magnetic field (Hua) can be increased. Therefore,
A magnetoresistance effect film having high stability in magnetic field detection can be obtained.
【００１１】第１の強磁性層及び第２の強磁性層として
は、例えば、ＮｉＦｅ層、Ｃｏ層、ＣｏＮｉＦｅ層、Ｃ
ｏＦｅ層等の強磁性層が挙げられる。強磁性層の一般的
な膜厚は、１〜１０ｎｍ程度である。As the first ferromagnetic layer and the second ferromagnetic layer, for example, a NiFe layer, a Co layer, a CoNiFe layer, a C
Examples include a ferromagnetic layer such as an oFe layer. A typical thickness of the ferromagnetic layer is about 1 to 10 nm.
【００１２】非磁性導電層としては、非磁性体であり、
かつ導電性に優れたものであれば特に限定されるもので
はなく、例えば、Ｃｕ層、Ａｇ層などが挙げられる。非
磁性導電層の一般的な膜厚は、１〜５ｎｍ程度である。The non-magnetic conductive layer is a non-magnetic material,
The material is not particularly limited as long as it has excellent conductivity, and examples thereof include a Cu layer and an Ag layer. A typical thickness of the nonmagnetic conductive layer is about 1 to 5 nm.
【００１３】反強磁性層としては、例えば、ＦｅＭｎ
層、ＩｒＭｎ層、及びＮｉＭｎ層などや、ＮｉＯ層、Ｃ
ｏＯ層、及びＦｅＯ3 などの酸化物系反強磁性層などが
挙げられる。反強磁性層の一般的な膜厚は、５〜２５ｎ
ｍ程度である。As the antiferromagnetic layer, for example, FeMn
Layer, IrMn layer, NiMn layer, NiO layer, C
An oO layer and an oxide-based antiferromagnetic layer such as FeO 3 are exemplified. A typical thickness of the antiferromagnetic layer is 5 to 25 n.
m.
【００１４】保磁力差型の磁気抵抗効果膜は、一般に、
第１の強磁性層、非磁性導電層、及び第２の強磁性層を
この順序で、または逆の順序で積層した構造を有し、第
１の強磁性層の保磁力が第２の強磁性層よりも小さい積
層膜である。このような保磁力差型の積層膜において
は、保磁力の小さい第１の強磁性層がフリー層となり、
外部磁界の影響でその磁化方向が変化する。従って、こ
のような保磁力差型積層膜においては、積層膜のうちの
少なくとも第１の強磁性層を水素ガスを含む雰囲気中で
スパッタリング法により形成することが好ましい。これ
により、第１の強磁性層の保磁力（Ｈｃ）を小さくする
ことができ、磁界感度を向上させることができる。ま
た、必要に応じ、第１の強磁性層以外の、非磁性導電層
及び第２の強磁性層を、水素ガスを含む雰囲気中でスパ
ッタリング法により形成してもよい。A coercive force difference type magnetoresistive film is generally
It has a structure in which a first ferromagnetic layer, a non-magnetic conductive layer, and a second ferromagnetic layer are stacked in this order or in the reverse order, and the coercive force of the first ferromagnetic layer is a second strength. This is a laminated film smaller than the magnetic layer. In such a coercive force difference type laminated film, the first ferromagnetic layer having a small coercive force becomes a free layer,
The magnetization direction changes under the influence of the external magnetic field. Therefore, in such a coercive force difference type laminated film, it is preferable that at least the first ferromagnetic layer of the laminated film is formed by a sputtering method in an atmosphere containing hydrogen gas. Thereby, the coercive force (Hc) of the first ferromagnetic layer can be reduced, and the magnetic field sensitivity can be improved. If necessary, the nonmagnetic conductive layer and the second ferromagnetic layer other than the first ferromagnetic layer may be formed by a sputtering method in an atmosphere containing hydrogen gas.
【００１５】第１の強磁性層及び第２の強磁性層として
は、上記スピンバルブ型と同様の強磁性層を用いること
ができ、第１の強磁性層は、第２の強磁性層よりも保磁
力の小さな強磁性層が選ばれる。また、非磁性導電層と
しては、上記スピンバルブ型の非磁性導電層と同様の非
磁性導電層を用いることができる。As the first ferromagnetic layer and the second ferromagnetic layer, the same ferromagnetic layer as that of the above-described spin valve type can be used. Also, a ferromagnetic layer having a small coercive force is selected. Further, as the nonmagnetic conductive layer, a nonmagnetic conductive layer similar to the above-described spin-valve type nonmagnetic conductive layer can be used.
【００１６】また、本発明に従う製造方法は、人工格子
型の積層膜に対しても適用することができるものであ
る。本発明の製造方法に従い、水素ガスを含む雰囲気中
でスパッタリング法により形成することにより、結晶粒
径が７ｎｍ以下である強磁性層及び反強磁性層等の磁性
層を形成することができる。また、より好ましくは、結
晶粒径が５ｎｍ以下である磁性層を形成することができ
る。これにより、保磁力の小さな強磁性層を形成するこ
とができ、また反強磁性層と強磁性層の交換結合磁界を
大きくすることができる。The manufacturing method according to the present invention can also be applied to an artificial lattice type laminated film. According to the manufacturing method of the present invention, a magnetic layer such as a ferromagnetic layer and an antiferromagnetic layer having a crystal grain size of 7 nm or less can be formed by forming the film by a sputtering method in an atmosphere containing hydrogen gas. More preferably, a magnetic layer having a crystal grain size of 5 nm or less can be formed. Thus, a ferromagnetic layer having a small coercive force can be formed, and the exchange coupling magnetic field between the antiferromagnetic layer and the ferromagnetic layer can be increased.
【００１７】本発明の製造方法に従い、水素ガスを含む
雰囲気中でスパッタリング法により形成することによ
り、非晶質構造を有する強磁性層及び反強磁性層等の磁
性層を形成することができる。これにより、例えば、保
磁力の小さな強磁性層を形成することができる。また、
反強磁性層と強磁性層の交換結合磁界を大きくすること
ができる。According to the manufacturing method of the present invention, a magnetic layer such as a ferromagnetic layer and an antiferromagnetic layer having an amorphous structure can be formed by sputtering in an atmosphere containing hydrogen gas. Thereby, for example, a ferromagnetic layer having a small coercive force can be formed. Also,
The exchange coupling magnetic field between the antiferromagnetic layer and the ferromagnetic layer can be increased.
【００１８】本発明の第１の局面に従う磁気抵抗効果膜
は、磁性層を含む積層膜から構成される磁気抵抗効果膜
であり、積層膜のうちの少なくとも１つの磁性層が７ｎ
ｍ以下、好ましくは５ｎｍ以下の結晶粒径を有する磁性
層である。The magnetoresistive film according to the first aspect of the present invention is a magnetoresistive film composed of a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film has a thickness of 7n.
m, preferably a magnetic layer having a crystal grain size of 5 nm or less.
【００１９】本発明の第２の局面に従う磁気抵抗効果膜
は、磁性層を含む積層膜から構成される磁気抵抗効果膜
であり、積層膜のうちの少なくとも１つの磁性層が、非
晶質構造を有する磁性層であることを特徴としている。
磁性層が強磁性層である場合には、保磁力の小さな強磁
性層とすることができ、磁界感度を向上させることがで
きる。A magnetoresistive film according to a second aspect of the present invention is a magnetoresistive film comprising a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film has an amorphous structure. Characterized by having a magnetic layer having
When the magnetic layer is a ferromagnetic layer, it can be a ferromagnetic layer having a small coercive force, and the magnetic field sensitivity can be improved.
【００２０】本発明の製造方法に従えば、高い磁界感度
を有する磁気抵抗効果膜を製造することができる。According to the manufacturing method of the present invention, a magnetoresistive film having high magnetic field sensitivity can be manufactured.
【００２１】[0021]
【発明の実施の形態】以下、本発明をより具体的な実施
例により説明する。図１に示すような積層膜構造を有す
る磁気抵抗効果膜を作製した。Ｓｉ基板１の（１００）
面の上に、下地層２としてのＴａ層（膜厚６ｎｍ）、第
１の強磁性層３としてのＣｏＦｅ層（膜厚２．５ｎ
ｍ）、非磁性導電層４としてのＣｕ層（膜厚２．５ｎ
ｍ）、第２の強磁性層５としてのＣｏＦｅ層（膜厚２．
５ｎｍ）、反強磁性層６としてのＩｒＭｎ層（膜厚１５
ｎｍ）、及び保護層７としてのＴａ層（膜厚５ｎｍ）を
順次、イオンビームスパッタリング法により形成した。
反応室内の圧力を４×１０-5Ｔｏｒｒとし、雰囲気ガス
としてはＸｅを用い、水素ガス流量を２ｓｃｃｍとし、
イオンビームの加速電圧を３００〜７００Ｖとして各薄
膜を形成した。なお基板は水冷し、基板温度を２５℃程
度に保った。また、第１の強磁性層３及び第２の強磁性
層５を形成する際のターゲットとしては、Ｃｏ 90Ｆｅ10
を用い、反強磁性層６を形成する際のターゲットとして
はＩｒ25Ｍｎ75を用いた。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.
This will be described with an example. It has a laminated film structure as shown in FIG.
A magnetoresistive film was manufactured. (100) of Si substrate 1
On the surface, a Ta layer (thickness: 6 nm) as an underlayer 2 was formed.
CoFe layer as ferromagnetic layer 3 (thickness: 2.5 n)
m), a Cu layer as the nonmagnetic conductive layer 4 (film thickness 2.5 n
m), a CoFe layer as the second ferromagnetic layer 5 (with a film thickness of 2.
5 nm), and an IrMn layer (film thickness 15) as the antiferromagnetic layer 6.
nm) and a Ta layer (thickness: 5 nm) as the protective layer 7.
The layers were sequentially formed by an ion beam sputtering method.
The pressure in the reaction chamber was 4 × 10-FiveTorr and atmosphere gas
Xe is used, the hydrogen gas flow rate is 2 sccm,
When the acceleration voltage of the ion beam is
A film was formed. The substrate is cooled with water and the substrate temperature is about 25 ° C.
I kept it. The first ferromagnetic layer 3 and the second ferromagnetic layer
As a target for forming the layer 5, Co was used. 90FeTen
As a target when forming the antiferromagnetic layer 6
Is Irtwenty fiveMn75Was used.
【００２２】以上のようにして得られた実施例のスピン
バルブ型の磁気抵抗効果膜について、直流４端子法によ
りＭＲ特性を評価した。図２は、この実施例のＭＲ特性
を示しており、磁界変化に対するＭＲ比の変化を示して
いる。図２のＭＲ特性曲線から、フリー層の保磁力（Ｈ
ｃ）は７．９Ｏｅであり、交換結合磁界（Ｈｕａ）は１
８１．８Ｏｅであることがわかる。The MR characteristics of the spin-valve magnetoresistive film of the embodiment obtained as described above were evaluated by the DC four-terminal method. FIG. 2 shows the MR characteristics of this embodiment, showing the change of the MR ratio with respect to the change of the magnetic field. From the MR characteristic curve of FIG. 2, the coercive force (H
c) is 7.9 Oe, and the exchange coupling magnetic field (Hua) is 1
It turns out that it is 81.8 Oe.
【００２３】比較として、水素ガス流量を０ｓｃｃｍ、
すなわち水素ガスの存在しないＸｅガスの雰囲気下で、
図１に示す積層構造の磁気抵抗効果膜を作製した。水素
ガス流量を０ｓｃｃｍとする以外は、上記実施例と同様
の条件で各層を形成した。図３は、このようにして得ら
れた比較例の磁気抵抗効果膜のＭＲ特性曲線を示す図で
ある。図３から、フリー層の保磁力（Ｈｃ）は１７．６
Ｏｅであり、交換結合磁界（Ｈｕａ）は１２４．２Ｏｅ
であることがわかる。For comparison, the hydrogen gas flow rate was set at 0 sccm,
That is, under an atmosphere of Xe gas in which no hydrogen gas exists,
A magnetoresistive film having a laminated structure shown in FIG. 1 was produced. Each layer was formed under the same conditions as in the above example except that the flow rate of the hydrogen gas was set to 0 sccm. FIG. 3 is a diagram showing an MR characteristic curve of the magnetoresistive film of the comparative example obtained in this way. From FIG. 3, the coercive force (Hc) of the free layer is 17.6.
Oe, and the exchange coupling magnetic field (Hua) is 124.2 Oe.
It can be seen that it is.
【００２４】従って、本発明に従う実施例の磁気抵抗効
果膜は、比較例の磁気抵抗効果膜に比べ、フリー層の保
磁力が小さくなっており、交換結合磁界が大きくなって
いる。Therefore, in the magnetoresistive film of the embodiment according to the present invention, the coercive force of the free layer is smaller and the exchange coupling magnetic field is larger than the magnetoresistive film of the comparative example.
【００２５】図４は、以上のようにして得られた実施例
の磁気抵抗効果膜及び比較例の磁気抵抗効果膜のＸ線回
折パターンを示す図である。図４に示すように、本発明
に従い水素ガスを含む雰囲気中で形成した実施例の磁気
抵抗効果膜は、比較例の磁気抵抗効果膜に比べ、強磁性
層、反強磁性層、及び非磁性導電層において、それぞれ
ピーク強度が著しく小さくなっている。これは、水素ガ
スを含む雰囲気中で各層を形成したことに起因するもの
と考えられる。FIG. 4 is a diagram showing the X-ray diffraction patterns of the magnetoresistive film of the example and the magnetoresistive film of the comparative example obtained as described above. As shown in FIG. 4, the magnetoresistive film of the example formed in an atmosphere containing hydrogen gas according to the present invention has a ferromagnetic layer, an antiferromagnetic layer, and a non-magnetic layer as compared with the magnetoresistive film of the comparative example. In each of the conductive layers, the peak intensity is significantly reduced. This is considered to be due to the fact that each layer was formed in an atmosphere containing hydrogen gas.
【００２６】次に、図１に示す構造の磁気抵抗効果膜の
各層を形成する際の水素ガス流量を変化させて磁気抵抗
効果膜を作製し、水素ガス流量の影響について検討し
た。水素ガス流量は、０ｓｃｃｍ、０．２５ｓｃｃｍ、
１ｓｃｃｍ、２ｓｃｃｍ、３ｓｃｃｍ、４ｓｃｃｍ、及
び５ｓｃｃｍに変化させた。その他の薄膜形成条件は、
上記実施例の磁気抵抗効果膜と同様にした。Next, the magnetoresistive film was manufactured by changing the hydrogen gas flow rate when forming each layer of the magnetoresistive film having the structure shown in FIG. 1, and the effect of the hydrogen gas flow rate was examined. The hydrogen gas flow rate is 0 sccm, 0.25 sccm,
It was changed to 1 sccm, 2 sccm, 3 sccm, 4 sccm, and 5 sccm. Other thin film formation conditions are as follows:
It was the same as the magnetoresistive film of the above embodiment.
【００２７】図５は、以上のようにして水素ガス流量を
変化させて得られた磁気抵抗効果膜のＭＲ比、フリー層
の保磁力（Ｈｃ）、交換結合磁界（Ｈｕａ）を示す図で
ある。図５においては、水素ガス流量が０ｓｃｃｍの磁
気抵抗効果膜の値を基準とし、規格化した値でそれぞれ
の測定値を示している。図５から明らかなように、水素
ガス流量が０．２５ｓｃｃｍと少量の流量であっても、
保磁力が著しく低減し、交換結合磁界が大きくなってい
る。図５に示す結果からは、水素ガス流量が２ｓｃｃｍ
で保磁力は１／１０以下にまで低下していることがわか
る。また交換結合磁界は、水素ガス流量が４ｓｃｃｍで
最大４０％増大していることがわかる。このような結果
からは、磁気抵抗効果膜の各層を形成する際に、それぞ
れにおける特性が最大となるように、水素ガス流量を各
層の形成において異ならせてもよいことがわかる。例え
ば、フリー層である第１の強磁性層３を形成する際に
は、水素ガス流量を２ｓｃｃｍとし、第２の強磁性層５
及び反強磁性層６を形成する際には、水素ガス流量を４
ｓｃｃｍとしてもよい。FIG. 5 is a diagram showing the MR ratio of the magnetoresistive film, the coercive force (Hc) of the free layer, and the exchange coupling magnetic field (Hua) obtained by changing the flow rate of the hydrogen gas as described above. . In FIG. 5, each measured value is shown as a standardized value based on the value of the magnetoresistive film having a hydrogen gas flow rate of 0 sccm. As is clear from FIG. 5, even when the hydrogen gas flow rate is as small as 0.25 sccm,
The coercive force is significantly reduced, and the exchange coupling magnetic field is increased. From the results shown in FIG. 5, the hydrogen gas flow rate was 2 sccm.
It can be seen that the coercive force is reduced to 1/10 or less. Further, it can be seen that the exchange coupling magnetic field increases at the maximum by 40% when the hydrogen gas flow rate is 4 sccm. From these results, it can be seen that when forming each layer of the magnetoresistive film, the hydrogen gas flow rate may be varied in the formation of each layer so that the characteristics in each layer are maximized. For example, when forming the first ferromagnetic layer 3 which is a free layer, the hydrogen gas flow rate is set to 2 sccm and the second ferromagnetic layer 5 is formed.
When forming the antiferromagnetic layer 6, the hydrogen gas flow rate is
It may be sccm.
【００２８】次に、図１に示す構造の磁気抵抗効果膜を
形成する際、各層の形成において水素ガスを流さず水素
ガスが存在しない雰囲気で形成した積層膜（Ａ）、第１
の強磁性層３の形成のときにのみ水素ガス流量を２ｓｃ
ｃｍとし、その他の層の形成の際には水素ガスを存在さ
せずに形成した積層膜（Ｂ）、及び最下層の下地層２か
ら最上層の保護膜７までの各層の形成において、水素ガ
ス流量を２ｓｃｃｍとして作製した積層膜（Ｃ）につい
て、ＭＲ比、交換結合磁界、及びフリー層の保磁力を測
定し、図６にその結果を示した。Next, when forming the magnetoresistive effect film having the structure shown in FIG. 1, a laminated film (A) formed in an atmosphere in which no hydrogen gas flows and no hydrogen gas is present in the formation of each layer,
Only when the ferromagnetic layer 3 of FIG.
cm, and when forming the other layers, the laminated film (B) formed without the presence of hydrogen gas, and the formation of each layer from the lowermost underlayer 2 to the uppermost protective film 7, hydrogen gas was used. The MR ratio, the exchange coupling magnetic field, and the coercive force of the free layer were measured for the laminated film (C) manufactured at a flow rate of 2 sccm, and the results are shown in FIG.
【００２９】図６においては、比較の積層膜Ａの各特性
値を基準として、規格化した値で示している。図６にお
いて、横軸のＡの位置には積層膜Ａの値を示しており、
横軸のＢの位置には積層膜Ｂの値を示し、横軸のＣの位
置には積層膜Ｃの値をそれぞれ示している。図６に示す
結果から明らかなように、積層膜Ｂのようにフリー層の
強磁性層を形成するときにのみ水素ガスを存在させてお
いても、保磁力が低減し、交換結合磁界が増加する。従
って、少なくともフリー層の強磁性層を形成させる際
に、本発明を適用し、水素ガスの雰囲気下で強磁性層を
形成することにより、磁界感度をある程度向上できるこ
とがわかる。In FIG. 6, the values are normalized with reference to the characteristic values of the comparative laminated film A. In FIG. 6, the value of the laminated film A is shown at the position A on the horizontal axis,
The position of B on the horizontal axis indicates the value of the laminated film B, and the position of C on the horizontal axis indicates the value of the laminated film C. As is clear from the results shown in FIG. 6, the coercive force is reduced and the exchange coupling magnetic field is increased even if hydrogen gas is present only when the ferromagnetic layer of the free layer is formed, as in the laminated film B. I do. Therefore, it is understood that the magnetic field sensitivity can be improved to some extent by applying the present invention and forming the ferromagnetic layer in an atmosphere of hydrogen gas at least when forming the free ferromagnetic layer.
【００３０】上記実施例では、スピンバルブ型の積層膜
を例示したが、保磁力差型の積層膜においても、少なく
とも低い保磁力を有する強磁性層を水素ガスの存在下に
スパッタリング法により形成することにより、磁界感度
を向上させることができる。In the above embodiment, a spin-valve type laminated film is exemplified. However, also in a coercive force difference type laminated film, a ferromagnetic layer having at least a low coercive force is formed by a sputtering method in the presence of hydrogen gas. Thereby, the magnetic field sensitivity can be improved.
【００３１】本発明は、上記実施例の積層膜の構造に限
定されるものではなく、その他の積層膜構造に対しても
同様に適用し、磁界感度を向上させることができる。The present invention is not limited to the structure of the laminated film of the above embodiment, but can be similarly applied to other laminated film structures to improve the magnetic field sensitivity.
【００３２】[0032]
【発明の効果】本発明によれば、高い磁界感度を有する
磁気抵抗効果膜を製造することができ、例えば、ＭＲヘ
ッドにおいて磁界感度を向上させ、ＨＤＤディスクなど
における磁気記録において高密度記録化を図ることがで
きる。According to the present invention, it is possible to manufacture a magnetoresistive film having high magnetic field sensitivity. For example, it is possible to improve the magnetic field sensitivity in an MR head and to achieve high density recording in magnetic recording on an HDD disk or the like. Can be planned.
【図１】本発明に従い製造される磁気抵抗効果膜の一実
施例を示す概略断面図。FIG. 1 is a schematic sectional view showing one embodiment of a magnetoresistive film manufactured according to the present invention.
【図２】本発明に従い製造される一実施例の磁気抵抗効
果膜のＭＲ特性曲線を示す図。FIG. 2 is a diagram showing an MR characteristic curve of a magnetoresistive film of one embodiment manufactured according to the present invention.
【図３】比較の磁気抵抗効果膜のＭＲ特性曲線を示す
図。FIG. 3 is a view showing an MR characteristic curve of a comparative magnetoresistive film.
【図４】本発明に従う一実施例の磁気抵抗効果膜のＸ線
回折パターンを示す図。FIG. 4 is a view showing an X-ray diffraction pattern of a magnetoresistive film of one example according to the present invention.
【図５】本発明に従う実施例において水素ガス流量を変
化させたときの各磁気抵抗効果膜のＭＲ比、交換結合磁
界、及びフリー層の保磁力を示す図。FIG. 5 is a diagram showing an MR ratio, an exchange coupling magnetic field, and a coercive force of a free layer of each magnetoresistive film when a hydrogen gas flow rate is changed in the example according to the present invention.
【図６】本発明に従う実施例において、第１の強磁性層
形成の際にのみ水素ガスを存在させて作製した積層膜
（Ｂ）と、各層を形成させる際に水素ガスを存在させて
作製した積層膜（Ｃ）のＭＲ比、交換結合磁界、及びフ
リー層の保磁力を示す図。FIG. 6 shows a laminated film (B) produced in the presence of hydrogen gas only when forming the first ferromagnetic layer and a hydrogen gas present when forming each layer in the embodiment according to the present invention. The figure which shows the MR ratio of the laminated film (C), the exchange coupling magnetic field, and the coercive force of the free layer.
１…基板 ２…下地層 ３…第１の強磁性層 ４…非磁性導電層 ５…第２の強磁性層 ６…反強磁性層 ７…保護層 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Underlayer 3 ... 1st ferromagnetic layer 4 ... Nonmagnetic conductive layer 5 ... 2nd ferromagnetic layer 6 ... Antiferromagnetic layer 7 ... Protective layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 久米 実 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Minoru Kume 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd.
Claims (11)
抵抗効果膜を製造する方法において、 前記積層膜のうちの少なくとも１つの磁性層を、水素ガ
スを含む雰囲気中でスパッタリング法により形成するこ
とを特徴とする磁気抵抗効果膜の製造方法。1. A method of manufacturing a magnetoresistive film comprising a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film is formed by a sputtering method in an atmosphere containing hydrogen gas. A method for producing a magnetoresistive film, comprising:
水素ガスを含む雰囲気中でスパッタリング法により形成
することを特徴とする請求項１に記載の磁気抵抗効果膜
の製造方法。2. A layer other than the magnetic layer in the laminated film,
2. The method according to claim 1, wherein the film is formed by a sputtering method in an atmosphere containing hydrogen gas.
導電層、第２の強磁性層、及び反強磁性層を積層した構
造を有し、第２の強磁性層が反強磁性層との磁気的結合
によってピン留めされたスピンバルブ型の積層膜である
ことを特徴とする請求項１または２に記載の磁気抵抗効
果膜の製造方法。3. The laminated film has a structure in which a first ferromagnetic layer, a non-magnetic conductive layer, a second ferromagnetic layer, and an antiferromagnetic layer are laminated, and the second ferromagnetic layer has an antiferromagnetic layer. 3. The method of manufacturing a magnetoresistive film according to claim 1, wherein the film is a spin-valve type laminated film pinned by magnetic coupling with a ferromagnetic layer.
少なくとも前記第１の強磁性層を、水素ガスを含む雰囲
気中でスパッタリング法により形成することを特徴とす
る請求項３に記載の磁気抵抗効果膜の製造方法。4. In the spin-valve type laminated film,
4. The method according to claim 3, wherein at least the first ferromagnetic layer is formed by a sputtering method in an atmosphere containing hydrogen gas.
前記第２の強磁性層及び前記反強磁性層のうちの少なく
とも一方を、水素ガスを含む雰囲気中でスパッタリング
法により形成することを特徴とする請求項３または４に
記載の磁気抵抗効果膜の製造方法。5. The spin-valve type laminated film,
5. The magnetoresistive film according to claim 3, wherein at least one of the second ferromagnetic layer and the antiferromagnetic layer is formed by a sputtering method in an atmosphere containing hydrogen gas. Production method.
導電層、及び第２の強磁性層を積層した構造を有し、第
１の強磁性層の保磁力が第２の強磁性層の保磁力よりも
小さい保磁力差型の積層膜であることを特徴とする請求
項１または２に記載の磁気抵抗効果膜の製造方法。6. The laminated film has a structure in which a first ferromagnetic layer, a nonmagnetic conductive layer, and a second ferromagnetic layer are laminated, and the coercive force of the first ferromagnetic layer is a second coercive force. 3. The method according to claim 1, wherein the laminated film is a coercive force difference type laminated film having a smaller coercive force than the ferromagnetic layer.
くとも前記第１の強磁性層を、水素ガスを含む雰囲気中
でスパッタリング法により形成することを特徴とする請
求項６に記載の磁気抵抗効果膜の製造方法。7. The magnetoresistive device according to claim 6, wherein at least the first ferromagnetic layer in the coercive force difference type laminated film is formed by a sputtering method in an atmosphere containing hydrogen gas. Method for producing effect film.
方法に従い、水素ガスを含む雰囲気中でスパッタリング
法により形成された磁性層中の結晶粒径が７ｎｍ以下で
あることを特徴とする磁気抵抗効果膜。8. A magnetic layer formed by a sputtering method in an atmosphere containing hydrogen gas according to the method of claim 1, wherein the magnetic layer has a crystal grain size of 7 nm or less. And a magnetoresistive effect film.
方法に従い、水素ガスを含む雰囲気中でスパッタリング
法により形成された磁性層が非晶質構造を有することを
特徴とする磁気抵抗効果膜。9. The magnetic layer according to claim 1, wherein the magnetic layer formed by a sputtering method in an atmosphere containing hydrogen gas has an amorphous structure. Resistive film.
気抵抗効果膜であって、 前記積層膜のうちの少なくとも１つの磁性層が、７ｎｍ
以下の結晶粒径の磁性層である磁気抵抗効果膜。10. A magnetoresistive film comprising a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film has a thickness of 7 nm.
A magnetoresistive film which is a magnetic layer having the following crystal grain size.
気抵抗効果膜であって、 前記積層膜のうちの少なくとも１つの磁性層が、非晶質
構造を有する磁性層である磁気抵抗効果膜。11. A magnetoresistive film comprising a laminated film including a magnetic layer, wherein at least one magnetic layer of the laminated film is a magnetic layer having an amorphous structure. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9071790A JPH10270776A (en) | 1997-03-25 | 1997-03-25 | Method for manufacturing magnetoresistance effect film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9071790A JPH10270776A (en) | 1997-03-25 | 1997-03-25 | Method for manufacturing magnetoresistance effect film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10270776A true JPH10270776A (en) | 1998-10-09 |
Family
ID=13470732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9071790A Pending JPH10270776A (en) | 1997-03-25 | 1997-03-25 | Method for manufacturing magnetoresistance effect film |
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| JP (1) | JPH10270776A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000065614A1 (en) * | 1999-04-22 | 2000-11-02 | Migaku Takahashi | Method for forming magnetoresistance effect film |
| WO2001084570A2 (en) * | 2000-04-28 | 2001-11-08 | Motorola, Inc. | Magnetic element with insulating veils and fabricating method thereof |
| JP2007324171A (en) * | 2006-05-30 | 2007-12-13 | Fujitsu Ltd | Magnetic memory device and its fabrication process |
| US9397287B1 (en) * | 2015-12-29 | 2016-07-19 | International Business Machines Corporation | Magnetic tunnel junction with post-deposition hydrogenation |
-
1997
- 1997-03-25 JP JP9071790A patent/JPH10270776A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000065614A1 (en) * | 1999-04-22 | 2000-11-02 | Migaku Takahashi | Method for forming magnetoresistance effect film |
| WO2001084570A2 (en) * | 2000-04-28 | 2001-11-08 | Motorola, Inc. | Magnetic element with insulating veils and fabricating method thereof |
| WO2001084570A3 (en) * | 2000-04-28 | 2002-03-28 | Motorola Inc | Magnetic element with insulating veils and fabricating method thereof |
| JP2007324171A (en) * | 2006-05-30 | 2007-12-13 | Fujitsu Ltd | Magnetic memory device and its fabrication process |
| US9397287B1 (en) * | 2015-12-29 | 2016-07-19 | International Business Machines Corporation | Magnetic tunnel junction with post-deposition hydrogenation |
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