JPH1187732A5 - - Google Patents

Info

Publication number
JPH1187732A5
JPH1187732A5 JP1997262821A JP26282197A JPH1187732A5 JP H1187732 A5 JPH1187732 A5 JP H1187732A5 JP 1997262821 A JP1997262821 A JP 1997262821A JP 26282197 A JP26282197 A JP 26282197A JP H1187732 A5 JPH1187732 A5 JP H1187732A5
Authority
JP
Japan
Prior art keywords
semiconductor film
amorphous semiconductor
opening
mask insulating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997262821A
Other languages
English (en)
Japanese (ja)
Other versions
JP3753845B2 (ja
JPH1187732A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26282197A priority Critical patent/JP3753845B2/ja
Priority claimed from JP26282197A external-priority patent/JP3753845B2/ja
Publication of JPH1187732A publication Critical patent/JPH1187732A/ja
Publication of JPH1187732A5 publication Critical patent/JPH1187732A5/ja
Application granted granted Critical
Publication of JP3753845B2 publication Critical patent/JP3753845B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP26282197A 1997-09-10 1997-09-10 半導体装置の作製方法 Expired - Fee Related JP3753845B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26282197A JP3753845B2 (ja) 1997-09-10 1997-09-10 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26282197A JP3753845B2 (ja) 1997-09-10 1997-09-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1187732A JPH1187732A (ja) 1999-03-30
JPH1187732A5 true JPH1187732A5 (cg-RX-API-DMAC10.html) 2005-06-02
JP3753845B2 JP3753845B2 (ja) 2006-03-08

Family

ID=17381090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26282197A Expired - Fee Related JP3753845B2 (ja) 1997-09-10 1997-09-10 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP3753845B2 (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4094437B2 (ja) * 1999-06-04 2008-06-04 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP4515349B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置
JP4532453B2 (ja) * 1999-06-04 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP4532452B2 (ja) * 1999-06-04 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
JP4515469B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
US20110157113A1 (en) * 2008-10-02 2011-06-30 Tadayoshi Miyamoto Display panel and display device using the same
JP5256144B2 (ja) * 2009-08-03 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法

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