JPH1187232A - Aligner and manufacture of device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make feasible of projecting a pattern on a reticle face on a wafer surface in high resolving power by a method, wherein the optical position of a component member of illumination system is adjusted, based on the measured results of the photointensity distribution on the pupil face in an optical system, the deviation and gradient of main exposure light, the angle distribution of irradiated light on the reticle, and the like. SOLUTION: A lens system 6 is manipulated according to the detection results by an illumination meter 24, so as to adjust the lightintensity distribution on a pupil face and the asymmetry to the exposure optical axis. At this time, a masking blade 12 makes deviations in the main exposure light to appear on a plane displaced form the exposure surface in the exposure optical axis direction, while the illumination meter 24 measures the deviations in the main light at this time. Moreover, the illumination meter 24 detects the gradient of the main light to the optical axis La of the optical system (5-16) to manipulate the lens system 6 based on the signals from optical system for adjusting the gradient of the main exposure light. In such a constitution, when the angular distribution of the illumination light is deviated from the optical system 16, the positions of respective elements in the illumination system are adjusted so that the illumination light having the dominant characteristics are emitted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and a method of manufacturing a device using the same, and more particularly, to a pattern on a first object plane provided with a surface to be illuminated on a second object plane by a projection optical system. When the projection exposure is performed, the light intensity distribution (illuminance distribution) and the telecentricity (deviation of the center of gravity of the light beam or deviation of the center of the effective light source) on the irradiated surface are appropriately set to easily obtain a high resolution. This is suitable when manufacturing a device by using an and repeat method or a step and scan method.

[0002]

2. Description of the Related Art In a recent projection exposure apparatus for manufacturing a semiconductor device, an apparatus capable of forming a pattern with a higher resolution than ever has been demanded as a projection exposure apparatus in accordance with high integration of a super LSI or the like. Is coming.

As a projection exposure apparatus which satisfies such demands, the present applicant has disclosed in Japanese Patent Application Laid-Open Nos. Hei 5-47629 and Hei 6-204123 a super-resolution imaging technique called oblique incidence illumination or a phase shift mask. Have proposed a projection exposure apparatus. In such an illumination method, σ is changed by changing the aperture shape of an aperture stop provided in the illumination system.
Value (the ratio of the NA of the projection optical system to the NA of the illumination optical system) or form a secondary light source having a special shape such as a so-called annular shape or quadrupole shape to illuminate the irradiated surface. I am trying to do it.

[0004]

In recent years, a projection exposure apparatus for manufacturing a semiconductor device for high integration of a super LSI or the like has been required to have extremely high transfer for printing a circuit pattern. One element that satisfies this requirement may have an appropriate angular distribution of illumination light incident on the projection optical system.
If illumination light having a predetermined angle relationship cannot be supplied to the projection optical system, an image shift appears when the wafer is defocused.

This means that an image shift occurs when a circuit pattern is exposed while being superimposed on a wafer having a step due to several steps, and the yield is deteriorated in the manufacture of semiconductor devices. .

Conventionally, in many projection exposure apparatuses, the optical position of each element of the illumination system is adjusted so that illumination light having the most optimal angle characteristic can be supplied in a standard illumination mode A.
However, the illumination mode A such as the oblique incidence illumination method and the small σ value
When the illumination mode B was changed to a different illumination mode, the angle of the illumination light was not always appropriate when the components of the illumination system were the same as the illumination mode A. This is because the optical path differs in each illumination mode, and the influence of unevenness of the antireflection film of each optical element constituting the illumination system and eccentricity of the lens system differ.

According to the present invention, there is provided a light intensity distribution on a pupil plane of an optical system, a shift of a principal ray of exposure light, a degree of inclination of a principal ray of exposure light, and an angular distribution of irradiation light irradiated on a surface to be irradiated (reticle). The illumination light is supplied at the optimal angle even if the illumination mode and illumination conditions are changed by adjusting the optical position of some parts of the illumination system based on the measurement results. It is an object of the present invention to provide an exposure apparatus capable of stably projecting various patterns on a reticle surface onto a wafer surface with a high resolution and a method for manufacturing a device using the same.

[0008]

An exposure apparatus according to the present invention comprises: (1-1) illuminating a pattern with exposure light emitted from a light source, and utilizing an optical system on a substrate surface provided with the pattern on the exposure surface. An illuminometer that moves along the direction of the exposure surface and the exposure optical axis by aligning its light receiving portion with the exposure surface in order to measure the illuminance distribution on the exposure surface, and a light source for the exposure surface. A masking means having a variable aperture size, which regulates an exposure range on the exposure surface, disposed on the side of the exposure surface, and the masking means displaces the optical system from the exposure surface in a plane displaced in the direction of the exposure optical axis. The exposure range is regulated so that the light intensity distribution on the pupil plane of the system appears, and the light intensity distribution is adjusted by moving the illuminometer along the plane by aligning the light receiving unit of the illuminometer with the plane. It is characterized by measuring.

(1-2) In an exposure apparatus that illuminates a pattern with exposure light emitted from a light source and exposes the pattern on a substrate surface provided on the exposure surface by using an optical system, an illuminance distribution on the exposure surface is determined. An illuminometer that moves along the exposure surface and the exposure optical axis direction with its light receiving portion aligned with the exposure surface for measurement, and an exposure range on the exposure surface, which is disposed on the light source side of the exposure surface. A masking means for regulating the size of the aperture is provided, and the masking means adjusts the exposure range so that a shift of a principal ray of the exposure light appears on a plane displaced in the direction of the exposure optical axis from the exposure surface. The displacement of the principal ray is measured by regulating the light receiving unit of the illuminometer so as to coincide with the plane and moving the illuminometer along the plane.

(1-3) An exposure apparatus for illuminating a pattern with exposure light emitted from a light source and exposing the pattern on a substrate surface provided on the exposure surface using an optical system whose light emission side is telecentric. A detector for detecting the degree of inclination of the chief ray of light with respect to the optical axis of the optical system, and adjusting the inclination angle of the chief ray of the exposure light according to the detection result from the detector to thereby adjust the chief ray of the exposure light. And an adjusting means for making the light parallel to the optical axis of the optical system, and a correcting means for correcting uneven illuminance on the exposure surface caused by adjustment of the adjusting means.

(1-4) In an exposure apparatus for exposing a pattern on a substrate surface provided on an exposure surface with exposure light radiated from a light source and passing through a pupil surface of an optical system, asymmetry of light intensity distribution on the pupil surface A light intensity distribution on the pupil plane symmetrical with respect to the exposure light axis by adjusting the exposure light on the light source side of the pupil plane according to a detection result from the detector. It is characterized by comprising adjusting means, and correcting means for correcting uneven illuminance on the exposure surface caused by adjustment of the adjusting means.

The projection exposure apparatus according to the present invention comprises: (2-1) illuminating a pattern on a surface to be irradiated with a light beam emitted from a light source via an illumination system, and projecting the pattern on a substrate surface by a projection optical system. In a projection exposure apparatus that performs exposure, an illuminometer is provided at a position separated by a predetermined amount in the optical axis direction from the irradiated surface or an optically conjugate surface thereof, and an angle distribution of illumination light is obtained by the illuminometer, and a signal from the illuminometer is obtained. The angle distribution of the illumination light is adjusted by rotating some of the members constituting the illumination system and / or the position of the light source (or both) or driving the illumination system in a plane perpendicular to the optical axis based on It is characterized by.

(2-2) A projection exposure apparatus for illuminating a pattern on an irradiation surface with a light beam emitted from a light source via an illumination system, and projecting and exposing the pattern onto a substrate surface by a projection optical system. The illumination system has masking means for limiting the size of the irradiated surface to the irradiated surface and the optically conjugate surface,
An illuminometer is provided at a position separated by a predetermined amount in the optical axis direction from the masking means or an optical conjugate plane thereof, and the illumination system is configured based on a signal from the illuminometer by obtaining an angular distribution of illumination light by the illuminometer. It is characterized in that the angular distribution of the illumination light is adjusted by rotating some of the members and / or the light source positions (or both) or driving them in a plane perpendicular to the optical axis.

(2-3) A projection exposure apparatus which illuminates a pattern on a surface to be irradiated with a light beam emitted from a light source via an illumination system, and projects and exposes the pattern on a substrate surface by a projection optical system. The illumination system has secondary light source forming means for forming a plurality of secondary light sources, and masking means for limiting the size of the surface to be illuminated, and is provided in the optical axis direction from the masking means or an optically conjugate plane thereof. An illuminometer is provided at a position separated by a predetermined amount, an angle distribution of illumination light is obtained by the illuminometer, and a part of the illumination system and / or a light source position (or both) constituting the illumination system is determined based on a signal from the illuminometer. It is characterized in that the angle distribution of the illumination light is adjusted by rotating or driving in a plane perpendicular to the optical axis.

In particular, (2-3-1) the part of the members comprises a lens system provided on the light incident surface side of the secondary light source forming means.

(2-3-2) The part of the members is formed of a plane-parallel plate provided on the light incident surface side of the secondary light source forming means.

(2-3-3) The part of the member is a wedge-shaped optical member provided on the light incident surface side of the secondary light source forming means.

(2-3-4) The part of the member is formed of a diaphragm member having a constant or variable aperture diameter provided on the light incident surface side of the secondary light source forming means. And so on.

In addition, in the constitutional requirements (2-1) to (2-3), (2-3-5) the main control unit based on a signal from the illuminometer causes the illuminated surface or an optically conjugate with the illuminated surface. The illuminance unevenness of a surface is measured, and the illuminance unevenness is corrected by an illuminance unevenness correction mechanism provided in an optical path of the illumination system based on a signal from the main controller.

The method for manufacturing a device according to the present invention comprises the steps of: (3-1) an exposure apparatus having the constitutions (1-1) to (1-4);
After projecting and exposing a pattern on a reticle surface onto a wafer surface by a projection optical system using the projection exposure apparatus of any one of (1) to (2-3), the device is manufactured through a developing process of the wafer. And

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. This embodiment shows a case in which the present invention is applied to a step-and-repeat type or step-and-scan type projection exposure apparatus for lithography of submicron or quarter micron or less.

In FIG. 1, reference numeral 1 denotes an arc tube as a light source such as a mercury lamp, which has a high-luminance light emitting portion 1a which emits ultraviolet rays, far ultraviolet rays and the like. The light emitting section 1a is disposed at the first focal point of the elliptical mirror 2 or in the vicinity thereof. The light emitting section 1a is imaged at the second focal point of the elliptical mirror 2 or at the vicinity 4 thereof. 3
Denotes a cold mirror, which is formed of a multilayer film and transmits most infrared light and reflects most ultraviolet light. The elliptical mirror 2 has a light-emitting portion image (light source image) 1b of the light-emitting portion 1a at or near the second focal point 4 via the cold mirror 3.
Is formed.

Reference numeral 5 denotes an optical system, which includes a condenser lens, a collimator lens, and a zoom lens. The light emitting unit image 1b formed at or near the second focal point 4 is optically transmitted through a lens system (adjustment means) 6. An image is formed on an incident surface 7a of an integrator (secondary light source forming means) 7.

The lens system 6 has a function as an adjusting means for adjusting an incident angle of illumination light incident on a surface to be irradiated (for example, a reticle surface). It can be driven two-dimensionally along a vertical plane.

The optical integrator 7 has a cross section of 4
A plurality of angular minute lenses are two-dimensionally arranged at a predetermined pitch, and a plurality of secondary light sources are formed near the exit surface 7b. An aperture 8 is arranged near the exit surface 7b of the optical integrator 7, and the aperture driving mechanism 3
3, the size and shape of the stop are made variable.

In this embodiment, the applicant of the present invention disclosed in the
As proposed in Japanese Patent Application Laid-Open No. 47626 and Japanese Patent Application Laid-Open No. 5-47640, a pupil plane 17 of the projection optical system 16 is selected and used by selecting an aperture having a different aperture shape according to the pattern shape on the reticle 14. Are variously changed.

Reference numeral 9 denotes illuminance unevenness correction means (correction means), which corrects illuminance unevenness on the surface 14 to be illuminated by the driving device 34. A condensing lens 10 condenses a plurality of light beams emitted from a plurality of secondary light sources in the vicinity of an emission surface 7b of the optical integrator 7, reflects the light beam on a mirror 11, and superimposes a masking blade 12 surface as an irradiation surface. Irradiate,
The surface is uniformly illuminated.

The masking blade 12 is made up of a plurality of movable light shielding plates, and the masking blade driving device 31 forms an arbitrary opening shape so that the wafer 1
The exposure range on eight surfaces is regulated. Reference numeral 13 denotes an imaging lens which transfers an opening shape of the masking blade 12 to a surface of a reticle 14 as a surface to be irradiated, and uniformly illuminates a required area on the surface of the reticle 14. The reticle 14 is held by a reticle stage 15.

Reference numeral 16 denotes a projection optical system (projection lens) for projecting a circuit pattern on the reticle 14 in a reduced scale, and comprises an emission telecentric system. 17 is a projection optical system 1
The pupil 6 and 18 are a wafer (substrate) on which the circuit pattern on the reticle 14 is projected and transferred, and are located on the exposure surface. 19 is a wafer chuck that holds the wafer 18 and moves in the optical axis direction, 20 is an XY stage that holds the wafer chuck 19 and moves two-dimensionally along a plane orthogonal to the optical axis, 21
Is a surface plate on which the projection lens 16 and the XY stage 20 are placed. The XY stage 20 has a structure that can move up and down by a predetermined amount in the direction of the optical axis La in order to measure the angular characteristics of the illumination light described later.

In the optical system according to the present embodiment, the light emitting section 1
a, the second focal point 4, the incident surface of the optical integrator 7, the masking blade 12, the reticle 14, and the wafer surface 18 have a conjugate relationship with each other. Further, the exit surface of the stop 8 and the pupil surface 17 of the projection optical system 16 have a substantially conjugate relationship.

Reference numerals 22 and 23 denote a part of a surface position detecting device for detecting position (height) information on the surface of the wafer 18 in the optical axis direction. Reference numeral 22 denotes an illuminating device for illuminating the wafer 18 from an oblique direction. Reference numeral denotes a light receiving device that receives light reflected from the surface of the wafer 18 and outputs a signal corresponding to the surface position of the wafer 18. Reference numeral 28 denotes a control device that controls the lighting device 22 and the light receiving device 23.

25 is a reflecting mirror fixedly mounted on the XY stage 20, 26 is a laser interferometer for irradiating the reflecting surface of the reflecting mirror 25 with a laser beam to detect the displacement of the XY stage 20,
Reference numeral 27 denotes a driving device that receives an output from the laser interferometer 26 and controls the movement of the XY stage 20.

The driving device 27 receives surface position information on the surface height of the wafer 18 from the control device 28, and moves the wafer chuck 19 in the optical axis direction, thereby causing the wafer 18 to move.
Is matched with the image plane of the device pattern of the reticle 14 by the projection lens system 16.

Reference numeral 24 denotes a detector (illuminance meter, detector) for detecting the angular distribution of the illumination light incident on the surface of the wafer 18 and the illuminance distribution on the surface. The illumination light is received while moving in the irradiation screen area together with the driving of the XY stage 20, and a signal corresponding to the output is sent to the detection device 29. Also, illuminometer 2
Reference numeral 4 is movable in the direction of the optical axis La.

Reference numeral 30 denotes each device 27, 28, 29, 31,
It is a main controller that controls 32, 33, and 34, and information from the detector 29 is input to the main controller 30.

In this embodiment, the masking blade 1
Reference numeral 2 changes the aperture shape so that the light intensity distribution on the pupil plane (17 or the stop 8) of the optical system appears on a plane 18b displaced in the direction of the exposure optical axis La from the exposure plane 18a shown in FIG.

The illuminometer 24 measures the light intensity distribution on the pupil plane and the asymmetry of the light intensity distribution with respect to the exposure optical axis. The lens system (adjustment means) 6 is driven based on the detection result from the illuminometer 24 to adjust the light intensity distribution on the pupil plane and its asymmetry with respect to the exposure optical axis.

In this embodiment, the masking blade 1
Reference numeral 2 changes the shape of the opening so that the principal ray of the exposure light appears on the plane 18b displaced in the direction of the exposure optical axis La from the exposure surface 18a shown in FIG. The illuminometer 24 measures the shift of the principal ray at this time.

In this embodiment, the illuminometer (detector) 24
Detects the inclination of the principal ray of the exposure light with respect to the optical axis La of the optical system (5 to 16). The lens system (adjustment means) 6 is driven based on the signal from the illuminometer 24 to adjust the tilt angle of the principal ray of the exposure light.

Next, a method for measuring the angular distribution of the illumination light emitted from the projection optical system 16 in this embodiment will be described. The angle distribution of the illumination light incident on the projection optical system 16 is obtained from the angle distribution of the emitted illumination light and the magnification of the projection optical system 16.

First, the first method will be described. For example, when measuring the angular distribution of the illumination light at the center of the screen (the position of the optical axis La), the masking blade driving device 31 drives the masking blade 12 so that the illumination light is transmitted only slightly at the position of the optical axis La. The opening 12a is limited to a small size. At this time, as shown in FIG.
4 is moved substantially to the position of the optical axis La, and at the same time, is located at a predetermined distance below the position 18a from the actual wafer surface.

Only the illumination light from the opening 12a limited by the masking blade 12 forms an image on the exposure surface 18a once, and then the detector 2 reflects the irradiation angle.
Light reaches 4. The light intensity at this time is changed to the XY stage 2
0 is measured two-dimensionally by the detector 24, and the result is plotted two-dimensionally.

Thus, the angular distribution of the illumination light is determined. When it is desired to measure the angular distribution of the illumination light at a point other than on the optical axis La on the exposure surface 18a, the minute opening 12a of the masking blade 12 is set at a position corresponding to the point to be measured within the masking blade plane. The XY stage 20 is two-dimensionally moved so that the position of the detector 24 becomes the measurement position, and the exposure surface 18a is moved by a predetermined distance.
The measurement may be performed by positioning the device downward from.

Next, the second method will be described. In the second method, a light shielding plate 41 and a CCD 42 as shown in FIG.

In FIG. 3, reference numeral 41 denotes a light shielding plate having a pinhole at the center, and reference numeral 42 denotes a photoelectric conversion element array such as a CCD. The light-shielding plate 41 is set in the same plane as the surface of the wafer 18, and the CCD 42 is located at a predetermined distance below the light-shielding plate 41 so as to receive light transmitted through the pinhole of the light-shielding plate 41.

For example, when measuring the angular distribution of the illumination light at the center of the screen (optical axis position), the XY stage 20 is set such that the pinhole 41a of the light shielding plate 41 is positioned at the optical axis La.
To move. At this time, only the illumination light limited by the pinhole 41a reflects the irradiation angle while the CCD 42
To reach. The angle distribution of the illumination light is determined by plotting the measurement results of the light intensity of each pixel of the received CCD 42 in a two-dimensional distribution.

When it is desired to measure the angle distribution of the illumination light at a point on the wafer surface 18 other than on the optical axis La, the XY stage 20 is two-dimensionally set so that the position of the pinhole 41a of the light shielding plate 41 is at the measurement position. It is only necessary to move it and measure it.

Next, the third method will be described. In the third method, for example, the angular distribution of the illumination light at the center of the screen (optical axis position) and at points located in a lattice shape in the screen is measured. In this case, a minute size as shown in FIG. A reticle 14 provided with a transparent pattern 14a is prepared. The reticle 14 is set on a reticle stage 15 as shown in FIG.
8 is moved to a position to be measured in the irradiation area, and is also located at a predetermined distance below the actual exposure surface 18a.

Only the illumination light limited by the reticle 14 shown in FIG. 4B once forms an image on the exposure surface 18, and then the light reaches the detector 24 while reflecting the irradiation angle. The light intensity is measured by the detector 24 while moving the XY stage 20 two-dimensionally, and the result is plotted two-dimensionally to determine the angular distribution of the illumination light.

The same measurement as described above can be performed by preparing a light-shielding plate provided with a pinhole near the reticle 15 and moving the light-shielding plate in the same plane as the reticle 15 surface. The angular distribution of the illumination light measured in this manner is based on the light intensity distribution at the aperture of the stop 8 and the projection optical system 1.
Since this corresponds to the light intensity distribution on the pupil plane 17 of No. 6, it can be regarded as a measurement of the secondary light source shape (effective light source distribution) that greatly affects the image formation of the reticle 14 on the wafer 18.

The detector 24 in FIGS. 2 and 4 may use a CCD. At this time, the light quantity detection in the illuminance unevenness measurement is obtained as the sum of outputs of the respective pixels of the CCD 24, and when measuring the angular distribution of the illumination light, the two-dimensional distribution output of the respective pixels of the CCD 24 becomes the output of the angular distribution.

When a CCD is used for detecting the angle distribution of the illumination light in FIGS. 2 to 4, the light intensity distribution of the light from the device pattern on the pupil plane 17 of the projection lens system 16 is determined by the driving device 3.
4, the size of the stop 8 optically conjugate to the pupil plane 17 is changed in several steps, and the total output of each pixel from the CCD in each step is detected.
In this case, a photodiode may be used instead of the CCD.

In FIGS. 2 to 4, when a CCD is used for detecting the angular distribution of the illumination light, either a one-dimensional CCD or a two-dimensional CCD can be applied. One-dimensional CCD
Use another line sensor instead of
Instead of D, a split sensor as shown in FIGS. 5A to 5D may be used.

As a result of measuring the angular distribution by the above method, the angular distribution of the illuminating light may be deviated (deviation of telecentricity). In particular, in many projection exposure apparatuses, the position of each element of the illumination system is adjusted so that illumination light having the most angular characteristics can be supplied in a standard illumination mode A.

However, since the light path is different in each illumination mode, the influence of the unevenness of the antireflection film of the optical element and the eccentricity of the lens system are different. If the components of the illumination system are the same as in the illumination mode A, the angle of the illumination light may not always be appropriate.

Next, a correction method in the case where the angular distribution of the illumination light is shifted (the telecentricity is shifted) will be described. FIGS. 6B and 6D show two-dimensional images when the angular distribution in each case is measured by an illuminometer.

When the angular distribution is shifted on the optical axis La as shown in FIGS. 6A and 6B, the direction of the incident light can be corrected by correcting the incident surface of the wafer 18 and the incident surface of the optical integrator 7. Since 7a is conjugate, the direction of the light beam incident on the optical integrator 7 may be changed.

In this embodiment, the lens system 6 is moved with respect to the optical axis.
This effect is realized as shown in FIGS. 6C and 6D by moving two-dimensionally along a vertical plane.

FIG. 7 is a flowchart showing a procedure for correcting the deviation of the illumination light angle distribution in this embodiment.

The projection optical system 16 using the mechanism described above is used.
The angular distribution on the optical axis of the illumination light incident on is measured. The main controller 30 calculates the direction and amount of movement of the lens system 6 based on the deviation amount of the angular distribution of the illumination light obtained from the detection device 29, and outputs a signal corresponding to the driving direction and the driving amount to the lens. It is sent to the system drive unit 32. Lens system driving device 3
2 drives the lens system 6 two-dimensionally in a predetermined direction and a predetermined amount based on a signal from the main controller 30. After the driving, the angular distribution of the illumination light is measured again, and if the value reaches the optimum value, the process proceeds to the next step. If not, repeat the above procedure until the optimal value is reached.

When the angle distribution of the illumination light is optimized, the surface to be irradiated 14 (wafer surface 1) is
8) The above-mentioned illuminance unevenness is measured to confirm whether or not the standard value is satisfied. This is because driving the lens system 6 changes the illuminance distribution on the incident surface 7a of the optical integrator 7, and the illuminance distribution on the irradiated surface (wafer surface 18) may be deteriorated. If the illuminance unevenness satisfies the standard value, the process ends. If the illuminance non-uniformity does not satisfy the standard value, the main controller 30 performs an operation based on the measured value, and the illuminance non-uniformity correction mechanism 9 is driven by the driving device 34 to correct the illuminance non-uniformity. Thereafter, the illuminance unevenness measurement is performed again. If the measured value satisfies the standard value, the procedure is terminated. If not, the procedure of illuminance unevenness correction is executed until the standard value is satisfied.

The illuminance non-uniformity correcting means 8 in this embodiment is a wedge-shaped optical element or a tilted optical element coated with a coating having a different transmittance depending on the incident angle of the illumination light proposed by the present applicant, for example, in Japanese Patent Application Laid-Open No. Hei. The plane of incidence may be replaced by a parallel plane plate, or the entrance surface of the optical integrator 7 proposed in Japanese Patent Application Laid-Open No. 9-36026
An optical filter such as a D filter is provided, and a means for driving and correcting the optical filter is used.

The case where the lens system 6 is moved two-dimensionally along a plane perpendicular to the optical axis to correct the angular distribution of the irradiation light has been described above. However, as shown in FIG. 8, the lens system 6 is provided in the optical path of the illumination system. A method in which the parallel flat plate 51 having a certain thickness is set at a predetermined angle to move the position of incidence on the optical integrator 7 may be used.

In order to correct the angular distribution of the irradiation light, as shown in FIG. 9, a method in which a wedge-shaped optical member 52 having a certain angle is inserted into and removed from the optical path, and the incident position on the optical integrator 7 is moved. But it is good.

In correcting the angular distribution of the irradiation light, although there is some loss of light amount, a stop 53 is provided between the optical system 5 and the light source 1 as shown in FIG. L
A method of moving the incident position on the optical integrator 7 by two-dimensionally driving it along a plane perpendicular to “a” may be used.

Although this embodiment shows a step-and-repeat type projection exposure apparatus, the present invention is similarly applicable to a step-and-scan type scanning projection exposure apparatus.

In this embodiment, the light source for forming the effective light source is a mercury lamp. However, the formation of the effective light source by a laser or the like is not mechanically different from this embodiment.

FIG. 11 is a schematic diagram of an optical configuration showing the second embodiment of the present invention. Illumination light emitted from a lamp 1 as a light source is reflected and condensed by an elliptical mirror 2 to form a light source image at a second focal position 4. The light source image formed at the second focal position 4 is formed on the incident surface 7a of the fly-eye lens 7 by an optical system 5a such as a condenser lens, an optical system 6, and an optical system 5b.

The lens system 6 can be driven two-dimensionally by the lens system drive system 32 along the optical axis direction and a plane perpendicular to the optical axis. As a result, it has the function of adjusting the position of the light beam incident on the fly-eye lens 7, and finally adjusts the incident angle of the light beam incident on the reticle 14 surface and the wafer 18 surface conjugate with it, thereby obtaining the illuminance distribution and telecentricity. It has the effect of correcting the degree.

The fly-eye lens 7 has a structure in which a plurality of minute lenses are two-dimensionally arranged, and a plurality of secondary light sources are formed near the exit surface 7b. The secondary light source formed on the exit surface 7b of the fly-eye lens 7 is superimposedly irradiated onto the reticle 14 by the relay condenser optical system 61.

Reference numeral 16 denotes a projection optical system for reducing and projecting a circuit pattern on the surface of the reticle 14, and reference numeral 20 denotes an XY stage which holds the wafer 18 and moves two-dimensionally along a plane orthogonal to the optical axis. The XY stage 20 has a structure in which the XY stage 20 can be moved up and down by a predetermined amount in order to measure an angular characteristic of a light beam incident on the surface of the wafer 18.

Numeral 24 denotes a light receiver for measuring the illuminance distribution on the surface of the wafer 18, which is measured while moving along with the driving of the XY stage 20 in the irradiation screen area on the surface of the wafer 18.
A signal corresponding to the output is sent to the illuminance distribution detecting device 29.

Reference numeral 62 denotes a detector (detector) for detecting the position of an image based on the amount of light incident near the surface of the wafer 18.
It is. A minute opening is provided on the surface of the reticle 14, and the position of the image is measured by detecting the amount of light flux passing through the opening and reaching the wafer 18.

Therefore, the telecentricity is derived from the shift of the image position due to the defocusing by measuring the position of the image each time the detector 62 is defocused together with the XY stage 20 in the direction of the optical axis La. The signal from the detector 62 is sent to the telecentricity detection system 63.

The information (the amount of deviation from the standard value) from the illuminance distribution detecting device 29 and the telecentricity detecting system 63 is transmitted to the main controller 3.
Sent to 0. The main controller 30 calculates in what direction and how much the lens system 6 and the lamp 1 should be moved in order to simultaneously suppress the illuminance distribution and the telecentricity within the standard. The signal of the calculation result is transmitted to the lens driving device 32 and the lamp driving system 6.
4, the lens system 6 and / or the lamp 1 (or both) are driven, so that the illuminance distribution and the telecentricity are simultaneously suppressed within the standard.

FIG. 12 is a flowchart showing a first procedure for correcting the telecentricity and the illuminance distribution of the light beam emitted from the projection optical system 16 to a desired standard value.

Any illumination mode (NA / σ condition, Ann
The exposure apparatus is set to (ull conditions), and the illuminance distribution and the telecentricity are measured (step 101). If both the measurement results are within the standard (step 102), the optimal state in the illumination mode (the state of the lens system 6 and the lamp 1)
Is stored (step 103), and the correction is terminated (step 104).

When the measurement result is out of the standard, it is detected in which direction and how much the illuminance distribution and the telecentricity are deviated in the illumination area, and based on the information, the main controller 3 is detected.
0 calculates the optimal position of the lens system 6 and the lamp 1. Based on the calculation result, the lens system 6 and the lamp 1 are driven and adjusted to positions where the illuminance distribution and the telecentricity are within the standard (step 105). If the values are within the standard, the states of the lens system 6 and the lamp 1 at that time are saved, and the correction is completed (step 104). If not, repeat the above procedure.

Incidentally, in order for the main control device 30 to calculate,
It is necessary to know the sensitivity of the change in the illuminance distribution and the sensitivity of the change in the telecentricity with respect to the drive direction and the drive amount of the lens system 6 and the lamp 1.

FIG. 13 is a flowchart showing a second procedure for correcting the telecentricity and the illuminance distribution of the light beam emitted from the projection optical system 16 to a desired standard value.

Any illumination mode (NA / σ condition, Ann
The exposure apparatus is set to (ull conditions), and the illuminance distribution and the telecentricity are measured (step 201). If both the measurement results are within the standard (step 202), the optimal state in the illumination mode (the state of the lens system 5 and the lamp 1)
Is stored (step 203), and the correction is terminated (step 204).

When the measurement result is out of the standard, the illuminance distribution and the telecentricity are detected in which direction and how much each is shifted in the illumination area, and the main controller 3 is determined based on the information.
0 calculates the optimum position of the lens system 6. Based on the calculation result, the drive of the lens system 6 is adjusted so that the illuminance distribution and the telecentricity are within the standard (step 205). If it is within the standard (step 206), the state of the lens system 6 and the lamp 1 at that time is stored (step 203), and the correction is terminated (step 204).

If the correction cannot be made only by adjusting the driving of the lens system 6, it is detected in which direction and how much the illuminance distribution and the telecentricity are deviated in the illumination area, and the main controller 30 is controlled based on the information. Calculates the optimum position of the lamp 1. Based on the calculation result, the driving of the lamp 1 is adjusted, and the driving is adjusted so that the illuminance distribution and the telecentricity fall within the standard (step 207).

If the drive adjustment of the lamp 1 is also out of the standard (step 208), the drive adjustment is performed by the lens system 6, and
Thereafter, the drive adjustment of the lens system 6 and the lamp 1 is repeated until convergence.

Incidentally, in order for the main control device 30 to calculate,
It is necessary to know the sensitivity of the change in the illuminance distribution and the sensitivity of the change in the telecentricity with respect to the drive direction and the drive amount of the lens system 6 and the lamp 1.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 14 is a flowchart for manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

Step 1 (circuit design) in this embodiment
Now, the circuit design of the semiconductor device will be performed. Step 2
In (mask production), a mask on which a designed circuit pattern is formed is produced.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 15 is a detailed flowchart of the wafer process in step 4 described above. First, in step 11 (oxidation), the surface of the wafer is oxidized. Step 12 (C
In VD), an insulating film is formed on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

The use of the manufacturing method of this embodiment makes it possible to easily manufacture a highly integrated semiconductor device.

[0096]

According to the present invention, as described above, the light intensity distribution on the pupil plane of the optical system, the shift of the principal ray of the exposure light, the inclination of the principal ray of the exposure light, or the irradiated surface (reticle) The angle distribution and the like of the irradiating light irradiating on the top are measured, and the illumination mode and the illumination conditions are variously changed by adjusting the optical positions of some members constituting the illumination system based on the measurement results. An exposure apparatus capable of supplying illumination light at an optimum angle, and capable of stably projecting various patterns on a reticle surface onto a wafer surface with a high resolution, and a device manufacturing method using the same. Can be achieved.

In addition, according to the present invention, it is possible to measure the angle of illumination light incident on the projection optical system,
It is possible to achieve an exposure apparatus and a device manufacturing method using the same, which can easily correct a deviation of an angular distribution, particularly a deviation of an angular distribution caused by changing an illumination mode.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of an optical system according to a first embodiment of the present invention.

FIG. 2 is an explanatory view of a part of FIG.

FIG. 3 is an explanatory diagram showing another example of the first embodiment;

FIG. 4 is an explanatory view showing another example of the first embodiment and a reticle to be used;

FIG. 5 is an explanatory diagram illustrating a configuration example of a split sensor according to the first embodiment.

FIG. 6 is an explanatory diagram showing a mode of specifically correcting a deviation of the illumination light angle distribution according to the first embodiment.

FIG. 7 is a flowchart illustrating a correction procedure when correcting the illumination light angle distribution according to the first embodiment.

FIG. 8 is an explanatory view showing another example of the first embodiment.

FIG. 9 is an explanatory view showing another example of the first embodiment.

FIG. 10 is an explanatory view showing another example of the first embodiment.

FIG. 11 is a schematic diagram of an optical system according to a second embodiment of the present invention.

FIG. 12 is a flowchart illustrating a first procedure for correcting both the illuminance distribution and the telecentricity according to the second embodiment of the present invention.

FIG. 13 is a flowchart illustrating a second procedure for correcting both the illuminance distribution and the telecentricity according to the second embodiment of the present invention.

FIG. 14 is a flowchart of a device manufacturing method of the present invention.

FIG. 15 is a flowchart of a device manufacturing method according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Mercury lamp (light source) 2 Elliptical mirror 3 Cold mirror 4 Second focus of elliptical mirror 2 Optical system 6 Lens system 7 Optical integrator 8 Aperture 9 Illumination unevenness correction means 10 Lens 11 Mirror 12 Masking blade 13 Lens 14 Reticle 15 Reticle stage Reference Signs List 16 Projection optical system (projection lens) 17 Projection lens pupil 18 Wafer 19 Wafer chuck 20 XY stage 21 Surface plate 24 Detector 41 Shield plate with pinhole 42 Two-dimensional sensor 51 Parallel plane plate 52 Wedge-shaped optical element 53 Aperture 61 Relay condenser Optical system 62 Detector 63 Telecentricity detection system 64 Lamp drive system

Claims (13)

[Claims] 1. An exposure apparatus for illuminating a pattern with exposure light emitted from a light source and exposing the pattern on a substrate surface provided on the exposure surface by using an optical system to measure an illuminance distribution on the exposure surface. An illuminometer that moves its light-receiving part along the exposure surface along the exposure surface and the exposure optical axis direction, and is disposed on the light source side of the exposure surface, and regulates an exposure range on the exposure surface. Masking means having a variable aperture size, and the masking means adjusts the exposure range so that the light intensity distribution on the pupil plane of the optical system appears on a plane displaced from the exposure surface in the direction of the exposure optical axis. An exposure apparatus, wherein the light intensity distribution is measured by regulating the light receiving unit of the illuminometer so as to coincide with the plane and moving the illuminometer along the plane. 2. An exposure apparatus which illuminates a pattern with exposure light emitted from a light source and exposes the pattern on a substrate surface provided on the exposure surface by using an optical system to measure an illuminance distribution on the exposure surface. An illuminometer that moves its light-receiving part along the exposure surface along the exposure surface and the exposure optical axis direction, and is disposed on the light source side of the exposure surface, and regulates an exposure range on the exposure surface. A masking means having a variable size of the opening, the masking means regulates the exposure range such that a shift of a principal ray of the exposure light appears on a plane displaced in the direction of the exposure optical axis from the exposure surface, An exposure apparatus for measuring a shift of the chief ray by moving a light receiving unit of the illuminometer along the plane and moving the illuminometer along the plane. 3. An exposure apparatus for illuminating a pattern with exposure light emitted from a light source and exposing the pattern on a substrate surface provided on the exposure surface using a telecentric optical system on the light emission side. A detector for detecting the degree of inclination of the light beam with respect to the optical axis of the optical system; and adjusting the inclination angle of the chief ray of the exposure light in accordance with the detection result from the detector to thereby convert the chief ray of the exposure light to the optical axis. An exposure apparatus comprising: adjusting means for making the light axis parallel to the optical axis of the system; and correcting means for correcting uneven illuminance on the exposure surface caused by adjustment of the adjusting means. 4. An exposure apparatus for exposing a pattern on a substrate surface provided on an exposure surface with exposure light emitted from a light source and passing through a pupil surface of an optical system, wherein an asymmetry of light intensity distribution on the pupil surface is detected. Adjusting means for adjusting the exposure light on the light source side of the pupil surface in accordance with the detection result from the detector to make the light intensity distribution on the pupil surface symmetric with respect to the exposure optical axis. An exposure apparatus comprising: correction means for correcting uneven illuminance on the exposure surface caused by adjustment of the adjustment means. 5. A projection exposure apparatus for illuminating a pattern on a surface to be irradiated with a light beam emitted from a light source via an illumination system, and projecting and exposing the pattern onto a substrate surface by a projection optical system. Alternatively, an illuminometer is provided at a position away from the optical conjugate plane by a predetermined amount in the optical axis direction, and an angle distribution of illumination light is obtained by the illuminometer, and a part configuring the illumination system based on a signal from the illuminometer. A projection exposure apparatus in which the angle distribution of the illumination light is adjusted by rotating the member or the light source position (or both) or driving the member in a plane perpendicular to the optical axis. 6. A projection exposure apparatus which illuminates a pattern on a surface to be irradiated with a light beam emitted from a light source via an illumination system, and projects and exposes the pattern on a substrate surface by a projection optical system. An illuminometer which has masking means for limiting the size of the irradiated surface on the surface to be irradiated and the optically conjugate surface, and which is separated by a predetermined amount in the optical axis direction from the masking means or the optically conjugate surface; The angle distribution of the illumination light is obtained by the illuminometer, and some of the members constituting the illumination system and / or the position of the light source (or both) are rotated based on the signal from the illuminometer, or A projection exposure apparatus, wherein the projection exposure apparatus is driven in an orthogonal plane to adjust an angular distribution of illumination light. 7. A projection exposure apparatus that illuminates a pattern on an irradiation surface with a light beam emitted from a light source via an illumination system, and projects and exposes the pattern on a substrate surface by a projection optical system. A secondary light source forming means for forming a plurality of secondary light sources; and a masking means for limiting the size of the illuminated surface, wherein the mask is separated from the masking means or an optically conjugate plane by a predetermined amount in the optical axis direction. Illuminometer is provided at a position where the illuminometer determines the angular distribution of the illumination light, and based on a signal from the illuminometer, some of the members constituting the illumination system and / or the light source position (or both) are rotated. A projection exposure apparatus wherein the angle distribution of the illumination light is adjusted by driving the illumination light in a plane perpendicular to the optical axis. 8. The projection exposure apparatus according to claim 7, wherein said part of the members comprises a lens system provided on the light incident surface side of said secondary light source forming means. 9. The projection exposure apparatus according to claim 7, wherein said partial member is formed of a plane-parallel plate provided on a light incident surface side of said secondary light source forming means. 10. The projection exposure apparatus according to claim 7, wherein said part of said member is a wedge-shaped optical member provided on a light incident surface side of said secondary light source forming means. 11. A projection exposure apparatus according to claim 7, wherein said part of said member is formed by a stop member having a fixed or variable aperture provided on a light incident surface side of said secondary light source forming means. apparatus. 12. A main controller measures illuminance non-uniformity of the illuminated surface or its optically conjugate surface based on a signal from the illuminometer, and an optical path of the illumination system based on a signal from the main controller. 12. The projection exposure apparatus according to claim 5, wherein the illuminance unevenness is corrected by an illuminance unevenness correction mechanism provided therein. 13. A pattern on a reticle surface is projected on a wafer by a projection optical system using the exposure apparatus according to any one of claims 1 to 4 or the projection exposure apparatus according to any one of claims 5 to 12. A method for manufacturing a device, comprising: after projecting and exposing on a surface, manufacturing a device on the wafer through a developing process.