JPH118412A - Semiconductor light-emitting element and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which has been improved so as to lessen as much as possible not to cover the sidewalls of island-like light-emitting parts with an electrode material and reduce the variations of the emission intensity and pattern for each emission dot. SOLUTION: This element is manufactured by forming a buffer layer 2 and a first ohmic contact layer 3 in island-form on a substrate 1, laminating a first clad layer 4, a light-emitting layer 5, a second clad layer 6 and a second ohmic contact layer 7 on the contact layer 3 so as to partly expose this layer 3, thus forming first electrodes 10 from the exposed part of the contact layer 3 on the substrate 1, and forming second electrodes 9 from the second contact layer 7 on the substrate 1. Parts confronting the exposed part of the contact layer 3 are formed wider than the width of the clad layer 4, the light-emitting layer 5, the second clad layer 6 and the second contact layer 7 and form the second electrodes 9 so as to cover the sidewalls of the wide parts.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly to a semiconductor light emitting device used as an exposure source of a photosensitive drum for a page printer and a method of manufacturing the same.

[0002]

2. Description of the Related Art A conventional semiconductor light emitting device is shown in FIGS. 7 and 8, reference numeral 21 denotes a semiconductor substrate;
Is a buffer layer made of GsAs, and 23 is n ⁺ -GaAs
24 is n-AlGa
A first cladding layer made of As, 25 is p-AlGaAs
s, a second cladding layer made of p-AlGaAs, 27 a second ohmic contanct layer made of p ⁺ -GaAs, 28 a protective film, 29 an anode electrode, and 30 a cathode electrode. is there.

[0005] Each of the semiconductor layers 22 to 27 is laminated and formed in an island shape. n-AlGaAs layer 24 and p-AlG
A semiconductor junction is formed with the aAs layer 25 and p ⁺ -Ga
An anode electrode 29 is provided on the As layer 27, and n ⁺ -GaAs
The cathode electrode 30 is formed so as to be connected to the layer 23. n ⁺ layer of the semiconductor layers 24 to 27 as -GaAs layer 23 part of is exposed is formed, the n ⁺ -G
The cathode electrode 30 is connected to the exposed portion of the aAs layer 23.

A semiconductor light emitting device composed of such semiconductor layers 22 to 27, an anode electrode 29, and a cathode electrode 30 is formed in a row on a semiconductor substrate 21, as shown in FIG. Further, the cathode electrode 30 (30a,
When 30b) is provided so as to be connected to the exposed portion of the n ⁺ -GaAs layer 23, the anode electrode 29 and the cathode electrode 30 (30
a, 30b) can be formed on the same surface side of the semiconductor substrate 21, so that two types of electrodes can be formed in the same step, and the connection operation with an external circuit can be easily performed. become able to.

FIG. 9 shows an anode electrode 29 and a cathode electrode 3.
The 0 part is shown enlarged. The light emitting part 31 is the anode electrode 29
8A, light is shielded. Therefore, as shown in FIG. 8A, when the anode electrode 29 is provided at the center of the light emitting portion 31, the light emission intensity can be distributed among the light emitting dots.
In order to eliminate such a distribution of light emission intensity, FIG.
As shown in (b), it is effective to provide the anode electrode 29 and the cathode electrode 30 on both sides of the light emitting unit 31 so as to face each other. Further, as shown in FIG. 8, in a light emitting diode array having a dual structure in which one cathode electrode is provided for every two light emitting elements, the current flow has directionality. It is effective to connect and provide the electrode 29 and the cathode electrode 30 on both sides of the light emitting section 31. Further, when the anode electrode 29 and the cathode electrode 30 are provided so as to face each other on both sides of the light emitting section 31, the contact area between the electrode 29 and the ohmic contact layer 23 increases, and the driving voltage can be reduced. In the case where the anode electrode 29 and the cathode electrode 30 are formed so as to face each other on both sides of the light emitting section 31, in order to extract more light from above the island-shaped light emitting section 31,
It is desirable that the side wall portion Y of the island-shaped light emitting portion 31 be covered with the anode electrode 29.

[0006]

However, in a mesa-shaped semiconductor light emitting device, the crystal orientation of the island-shaped semiconductor layer 31 is set such that the wall X of the lead portion of the anode electrode 29 has a mesa shape. Then, as shown in FIG. 10, the side wall Y of the island-shaped light emitting portion 31 has an inverted mesa structure, and the island-shaped light emitting portion 3
The central portion of one side wall Y has a concave shape. In this state, if the anode electrode 29 is formed so that the side wall Y of the island-shaped light emitting portion 31 is also covered, when the electrode material is not adhered to the depressed portion or when the electrode pattern is formed by the lift-off method, There is a problem that the resist material (not shown) remains in the depressed portion, the electrode material is peeled off together with the resist material, and the reverse mesa portion Y has no electrode material.

When the side wall Y of the island-shaped light emitting portion 31 is not covered with the electrode material, light leaks from this portion, and the light emission intensity irradiated above the light emitting element is weakened. This causes the problem of pattern variations.

Further, when light leaks from the side wall portion Y of the island-shaped light emitting portion 31, the directivity at the time of dot exposure deteriorates, and there is a problem that the printing quality deteriorates.

The present invention has been made in view of such a problem of the prior art, and it is possible to minimize the occurrence of a situation in which the side wall of the side surface of the island-shaped light emitting portion is not covered with the electrode material. It is an object of the present invention to provide a semiconductor light emitting device in which variations in light emission intensity and light emission pattern for each dot are reduced as much as possible.

[0010]

In order to achieve the above object, in a semiconductor light emitting device according to the first aspect, a buffer layer and a first ohmic contact layer are formed on a substrate in an island shape. This ohmic contact layer
The first cladding layer, the light emitting layer, the second cladding layer, and the second cladding layer so that a part of the ohmic contact layer is exposed.
A first electrode is formed from the exposed portion of the first ohmic contact layer to the substrate, and a second electrode is formed from the second ohmic contact layer to the base slope. In the semiconductor light emitting device having an electrode formed thereon, a portion facing the exposed portion of the first ohmic contact layer is wider than the first clad layer, the light emitting layer, the second clad layer, and the second ohmic contact layer. Then, the second electrode was formed so as to cover the side wall portion of the wide portion.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor light emitting device, the buffer layer, the first ohmic contact layer, the first cladding layer, the light emitting layer, the second cladding layer, and the second Of the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact such that a part of the first ohmic contact layer is exposed. A semiconductor light emitting element formed by etching a layer to connect a first electrode to an exposed portion of the first ohmic contact layer and to connect a second electrode to the second ohmic contact layer; Forming a part of the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer by etching the first ohmic layer. Exposing the first ohmic contact layer such that a portion of the first ohmic contact layer facing the exposed portion of the first ohmic contact layer is wider than the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer. The first cladding layer, the light-emitting layer, the second cladding layer, and the second ohmic contact layer on the portion facing the portion are removed by etching.

Further, in the semiconductor light emitting device according to the third aspect, the buffer layer and the first ohmic contact layer are formed in an island shape on the substrate, and the first ohmic contact layer is formed on the first ohmic contact layer. Forming a first cladding layer, a light emitting layer, a second cladding layer, and a second ohmic contact layer in order so that a part of the contact layer is exposed, and exposing the first ohmic contact layer; A first electrode is formed from the portion to the substrate, and a second electrode is formed from the second ohmic contact layer to the substrate.
The light emitting layer and the second cladding layer in the portion facing the exposed portion of the ohmic contact layer were formed so as to gradually become narrower, and the side wall portion of the narrower portion was covered with the second electrode.

[0013]

In the semiconductor light emitting device according to the first aspect, if the first ohmic contact layer is formed wider than the first clad layer, the light emitting layer, the second clad layer, and the second ohmic contact layer, The sidewall of the island-shaped semiconductor layer has a stepped shape, and the amount of depression in the sidewall is reduced. Therefore, it is possible to reduce as much as possible that the electrode material does not adhere to the side wall portion or the resist remains in the lift-off method.

In the method for manufacturing a semiconductor light emitting device according to the present invention, when the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer are partially removed by etching, The first ohmic contact layer is formed such that a portion facing the exposed portion of the first ohmic contact layer is wider than the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer. When the first clad layer, the light emitting layer, the second clad layer, and the second ohmic contact layer on the portion facing the exposed portion of the above are removed by etching, the side wall of the island-shaped semiconductor layer can be formed without complicating the process. It is possible to reduce the possibility that the electrode material does not adhere to the portion and that the resist material in the lift-off method remains on the side wall portion.

Further, in the semiconductor light emitting device according to the third aspect, the light emitting layer and the second cladding layer in a portion facing the exposed portion of the first ohmic contact layer are formed so as to be gradually narrowed. Therefore, the angle between the side wall portions of the light emitting layer and the second cladding layer becomes gentler, and the side wall portion can be more easily covered with the second electrode, and light emission leakage from this portion can be reduced as much as possible.

[0016]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor light emitting device according to claim 1, wherein 1 is a substrate, 2 is a buffer layer, 3 is a first ohmic contact layer, 4 is a first cladding layer, and 5 is A light emitting layer, 6 is a second cladding layer, 7 is a second ohmic contact layer, 8 is a protective film, 9 is an anode electrode (second electrode), and 10 is a cathode electrode (first electrode).

The substrate 1 is made of, for example, single crystal silicon or gallium arsenide. As the substrate 1, (100)
A single crystal substrate or the like which is turned off by 2 to 7 ° from the plane in the (011) plane direction is used.

The buffer layer 2 functions as a buffer layer for forming compound semiconductor layers having different lattice constants on the substrate 1, and is made of, for example, a gallium arsenide film and has a thickness of about 2 μm.

The first ohmic contact layer 3 is made of a gallium arsenide film containing a high concentration of semiconductor impurities, and has a thickness of about 0.1 to 2.0 μm.

The first cladding layer 4 is made of aluminum gallium arsenide (n-A1 _x Ga) containing an n-type semiconductor impurity.
_1-x As) layer, and the aluminum composition x is set to about 0.3. The light emitting layer 5 is made of, for example, aluminum gallium arsenide (p-A1 _y Ga) containing a p-type semiconductor impurity.
_1-y As) layer. The second cladding layer 6 is made of, for example, p
Type semiconductor impurity made of aluminum gallium arsenide _{(p-Al z Ga 1-} z As) layer containing the aluminum composition z is set to, for example, about 0.3. The first cladding layer 4 and the light emitting layer 5 are each formed to a thickness of about 0.4 μm, and the second cladding layer 6 is formed to a thickness of about 0.8 μm.

The aluminum composition y of the light emitting layer 5 is appropriately selected and determined so as to have a required light emitting wavelength. That is, by changing the mixed crystal ratio (aluminum composition y) of aluminum arsenide (AlAs) and gallium arsenide (GaAs) in the light emitting layer 5 in the range of 0 to 0.4, 650 is obtained.
It can be a light emitting diode that emits light of up to 880 nm. The aluminum compositions x and z of the first cladding layer 4 and the second cladding layer 6 are set to be larger than the aluminum composition y of the light emitting layer 5 so as to form a so-called double hetero structure in order to increase the luminous efficiency. By doing so, the diffusion of holes from the light emitting layer 5 is prevented by the first cladding layer 4 having a wide band gap, thereby improving the efficiency of recombination of electrons and holes in the light emitting layer 5 and improving the light emitting efficiency. I do. Further, the transparent second cladding layer 6 having a wider forbidden band than the light emitting layer 5.
Exists on the upper layer side, so that light emitted from the light emitting layer 5 can be efficiently extracted to the outside. The ohmic contact layer 7 is composed of a gallium arsenide (p ⁺ -GaAs) layer containing a large amount of p-type semiconductor impurities, and has a thickness of about 160 °.

The buffer layer 2 is formed by MOCVD, MBE or the like. That is, the natural oxide film on the surface of the silicon substrate 1 is removed at a high temperature of 800 to 1000 ° C.
After growing an amorphous gallium arsenide film serving as a nucleus at a low temperature of 0 ° C. or less to a thickness of 100 to 500 °,
The temperature is raised to 00 ° C. to form a gallium arsenide single crystal film (two-stage growth method). By stopping growth in the gallium arsenide film and repeating high-temperature annealing at 750 to 1000 ° C. and cooling to 600 ° C. or less (thermal cycle method), crystal defects such as dislocations are reduced. Next, the remaining buffer layer 2 is formed continuously until it has a predetermined thickness.

Each of the compound semiconductor layers 3 to 7 formed on the buffer layer 2 is also formed by MOCVD or MBE. When each of the compound semiconductor layers 3 to 7 is formed by the MOCVD method, trimethyl gallium ((CH ₃ ) ₃ Ga), trimethyl aluminum (( C
H ₃ ) ₃ A1), trimethylindium ((CH ₃ ) ₃
In) or the like, and as a raw material of As, arsine (AsHs ₃ ) or the like is used. Examples of n-type semiconductor impurities for controlling the conductivity type include silane (SiH ₄ ).
Dimethyl zinc ((CH ₃ ))
₂ Zn).

The island structure as shown in FIG. 1 has a multilayer structure including a buffer layer 2, a first ohmic contact layer 3, and a light emitting layer 5 on the entire surface or a part of a silicon substrate 1, as shown in FIG. After the films 4 to 6 and the second ohmic contact layer 7 are sequentially laminated and formed, they are formed into islands by etching or the like, and then a resist mask is formed on the islands as shown in FIG. 12 is applied, and a part of the semiconductor layers 4 to 7 above the first ohmic contact layer 3 is etched so that a part of the first ohmic contact layer 3 is exposed.
As shown in FIG. 5C, the side wall is formed so as to have a step shape.

When the first cladding layer and a part of the opposite conductive type semiconductor layers 4 to 7 are etched so that a part of the first ohmic contact layer 3 which is one conductive type semiconductor layer is exposed, As shown in FIG. 3, both sides of the first cladding layer of the electrode connection portion and the opposite conductivity type semiconductor layers 4 to 7 are also etched. When both sides of the first cladding layer and the opposite conductivity type semiconductor layers 4 to 7 of the electrode connection portion are etched in this manner, as shown in FIG.
If now the first ohmic contact layer sidewall Y ₁ stepped formed in the side wall Y ₂ of the first cladding layer and the opposite conductivity type semiconductor layer 4-7, depression of the side wall portions of the island-like semiconductor layer is smaller Become. Therefore, it is possible to prevent the electrode from being attached to the side wall of the island-shaped semiconductor layer and to prevent the resist material from remaining.

In order to etch the first ohmic contact layer so as to be wider than the first cladding layer and the opposite conductive type semiconductor layers 4 to 7, etching is performed using a resist mask 12 as shown in FIG. do it. FIG.
In the figure, a is a region where the first ohmic contact layer 3 is exposed to connect the cathode electrode 10 to the first ohmic contact layer 3, b is a region which becomes a light emitting portion, and c is a first region. Cladding layer and reverse conductivity type semiconductor layer 4-
7 is a region formed by connecting the anode electrode 9 to the electrode 7.
Therefore, the island-shaped semiconductor layer can be formed in a step-like manner with the mask pattern of the resist mask 12 for exposing the first ohmic contact layer 3.

The first part of the part where the anode electrode 9 is formed
May be formed so as to be at least narrower than the first ohmic contact layer 3, but from the accuracy of the etching mask 11, the first ohmic contact layer 3 Also 1-5 μm
What is necessary is just to form so that it may become narrow about a width.

As shown in FIG. 1, the compound semiconductor layers 2 to 7
A protective film 8 made of, for example, a silicon nitride (SiN _x ) film or the like is formed on the surface of the protective film 8. An anode electrode 9 made of, for example, Au—Cr is formed on the surface of the protective film 8 to protect the surface. It is connected to the second ohmic contact layer 7 via a through hole formed in the film 8. Further, a layer of, for example, Au—Cr is formed as the cathode electrode 10 on the first ohmic contact layer 3.

The semiconductor light emitting device thus configured is
When a current flows from the anode electrode 9 to the cathode electrode 10 in the forward direction, electrons are injected from the first cladding layer 4 to the light emitting layer 5, and these minority carriers and holes as the majority carrier in the light emitting layer 5 emit light again. It emits light when combined.

FIGS. 6A and 6B are views showing one embodiment of the semiconductor light emitting device according to claim 3. FIG. 6B is a plan view of the light emitting unit, and FIG. 6A is a view of FIG.
It is an AA line sectional view in the inside. 6A and 6B, 1 is a substrate, 2 is a buffer layer, 3 is a first ohmic contact layer, 4 is a first cladding layer, 5 is a light emitting layer, 6
Denotes a second cladding layer, 7 denotes a second ohmic contact layer, 8 denotes a protective film, and 9 denotes a second electrode. The first ohmic contact layer 3 and the first cladding layer 4 are one conductivity type semiconductor layers, and the light emitting layer 5, the second cladding layer 6, and the second ohmic contact layer 7 are opposite conductivity type semiconductor layers.

The first ohmic contact layer 3 is formed so that a part thereof is exposed from the other semiconductor layers 4 to 7. The exposed portion of the first ohmic contact layer 3, the first electrode 10 through a contact hole C ₁
Is connected. The first cladding layer 4, the light emitting layer 5, and the second cladding layer 6, which face the exposed portion of the first ohmic contact layer 3, are tapered so as to gradually become narrower. . Contact holes C ₂ are formed on the tapered portion.

The first cladding layer 4, the light emitting layer 5, and the second
The width W ₂ of the front end portion S of the cladding layer 6, in order to prevent disconnection of the second electrode 9, it is desirable that more than 10 [mu] m, the original width W ₁ of the second electrode 9, for example, 22μm
If the length L of the narrowing is, for example, 18 μm, the angle θ of the narrowing is tan θ = ((22−10)
/ 2) / 18, θ = 18.43, and the angle θ <19
° is desirable. Also, the first cladding layer 4,
If the light emitting layer 5, and the width W ₂ of the end portion of the second cladding layer 6 to 5 [mu] m, the angle theta <can be extended up to 25 °.

A second electrode 9 is formed on the tapered portion of the semiconductor layer from the semiconductor layer to the side wall portion. The second electrode 9 is formed via the contact hole C ₂ and the second ohmic contact layer 7. Is connected to the second electrode 9. Note that the second ohmic contact layer 7 may be formed along the shape of the contact hole C ₂ , or may gradually taper from a portion covered with the second electrode 9 in the same manner as the second cladding layer 6. It may be formed in a shape.

As described above, when the first cladding layer 4, the light emitting layer 5, and the second cladding layer 6 are formed so as to gradually become narrower, the first cladding layer 4, the light emitting layer 5, and the The wall Y of the second cladding layer 6 has a moderately steep angle of the side wall Y due to the relationship of the plane orientation of the crystal, and the first cladding layer 4, the light emitting layer 5, and the second cladding layer 6 The wall portion Y can be more reliably covered with the second electrode 9. Thus, light emission leakage from this portion can be reduced as much as possible.

In the above embodiment, since the first cladding layer 4, the light emitting layer 5, and the second cladding layer 6 are tapered, a part of the first ohmic contact layer 3 is formed. At the same time as the exposing, it is advantageous that the patterning can be tapered, but it is advantageous that the light emitting layer 5 and the second cladding layer 6 only have a tapered shape at least. 2-7 can be tapered,
The layer above the first ohmic contact layer 3 may be tapered.

[0036]

As described above, according to the semiconductor light emitting device of the first aspect, the first ohmic contact layer is formed by the first ohmic contact layer.
If it is formed so as to be wider than the cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer, the side wall portion of the island-shaped semiconductor layer becomes step-shaped, and the amount of depression of the side wall portion is reduced. Becomes smaller. Therefore, it is possible to reduce as much as possible that no electrode material is adhered to the side wall portion or that the resist is left in the lift-off method, and that a variation in light emission intensity can be prevented.

According to the method of manufacturing a semiconductor light emitting device of the present invention, when the first clad layer, the light emitting layer, the second clad layer, and the second ohmic contact layer are partially removed by etching. The first ohmic contact is formed such that a portion facing the exposed portion of the first ohmic contact layer is wider than the first cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer. A first cladding layer on a portion facing the exposed portion of the contact layer,
When the light-emitting layer, the second cladding layer, and the second ohmic contact layer are removed by etching, the electrode material does not adhere to the side wall of the island-shaped semiconductor layer without complicating the process, or The remaining resist material in the lift-off method can be reduced.

Further, according to the semiconductor light emitting device of the third aspect, the light emitting layer and the second clad layer in the portion facing the exposed portion of the first ohmic contact layer are formed so as to be gradually narrowed. Therefore, the side wall portion of the narrow portion is gradually cut, so that the side wall portion can be more completely covered.Thus, light leakage from the narrow portion can be reduced as much as possible. And the print quality is improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor light emitting device according to claim 1;

FIG. 2 is a plan view showing one embodiment of the semiconductor light emitting device according to claim 1;

FIG. 3 is a view showing one manufacturing process of the semiconductor light emitting device according to claim 1;

FIG. 4 is a view showing a mask pattern in one manufacturing step of the semiconductor light emitting device according to claim 1;

FIG. 5 is a view showing a method for manufacturing a semiconductor light emitting device according to claim 2;

FIG. 6 is a plan view showing one embodiment of a semiconductor light emitting device according to claim 3;

FIG. 7 is a sectional view showing a conventional semiconductor light emitting device.

FIG. 8 is a plan view showing a conventional semiconductor light emitting device.

FIG. 9 is an enlarged plan view showing an electrode portion in a conventional semiconductor light emitting device.

FIG. 10 is a cross-sectional view showing a side wall of an island-shaped light emitting portion in a conventional semiconductor light emitting device.

[Explanation of symbols]

l ... substrate, 2 ... buffer layer, 3 ... first ohmic contact layer, 4 ... first cladding layer, 5
... Emission layer, 6 ... Second cladding layer, 7 ... Second ohmic contact layer, 8 ... Protective film, 9 ...
.Second electrode (anode), 10... First electrode (cathode)

Claims (3)

[Claims] A buffer layer and a first ohmic contact layer are formed in an island shape on a substrate, and a portion of the first ohmic contact layer is exposed on the first ohmic contact layer. , A first cladding layer, a light emitting layer,
Forming a second clad layer and a second ohmic contact layer by sequentially laminating them, forming a first electrode from an exposed portion of the first ohmic contact layer onto the substrate, and forming the second ohmic contact In a semiconductor light emitting device in which a second electrode is formed from the layer to the substrate, a portion facing the exposed portion of the first ohmic contact layer includes a first cladding layer, a light emitting layer, a second cladding layer, A semiconductor light emitting device, wherein the second electrode is formed so as to be wider than the second ohmic contact layer, and the side wall of the wide portion is covered. 2. A method according to claim 1, wherein a buffer layer, a first ohmic contact layer, a first cladding layer, a light emitting layer, a second cladding layer, and a second ohmic contact layer are sequentially laminated on a substrate. The first clad layer, the light emitting layer, and the first ohmic contact layer are partially exposed.
The second clad layer and the second ohmic contact layer are etched to form a first electrode connected to an exposed portion of the first ohmic contact layer, and a second electrode is formed on the second ohmic contact layer. A method for forming a semiconductor light emitting device by connecting two electrodes;
When a part of the cladding layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer is removed by etching, the part facing the exposed part of the first ohmic contact layer is formed by the first cladding layer. The first cladding layer on a portion facing the exposed portion of the first ohmic contact layer so as to be wider than the layer, the light emitting layer, the second cladding layer, and the second ohmic contact layer; A semiconductor light emitting device, wherein a layer, a second cladding layer, and a second ohmic contact layer are removed by etching. 3. A buffer layer and a first ohmic contact layer are formed in an island shape on a substrate, and a part of the first ohmic contact layer is exposed on the first ohmic contact layer. , A first cladding layer, a light emitting layer,
Forming a second clad layer and a second ohmic contact layer by sequentially laminating them, forming a first electrode from an exposed portion of the first ohmic contact layer onto the substrate, and forming the second ohmic contact In a semiconductor light emitting device in which a second electrode is formed from a layer to the substrate, a portion of the light emitting layer and the second cladding layer in a portion facing the exposed portion of the first ohmic contact layer are gradually narrowed. And the side wall portion of the narrow portion is formed in the second
A semiconductor light-emitting device characterized by being coated with an electrode.