JPH117906A - Resistor, and electron-gun body structure and electron tube using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a superior resistor in reliability which can securely fix a terminal on an insulated substrate. SOLUTION: This device is equipped with an insulated substrate 31 which passes through between a pair of sides facing each other, a resistor layer 33 formed on one side of the insulated substrate 31, electrode layers for terminals 32A to 32E formed by being connected to the resistor layer 33 on the other side of the insulated substrate 31, and terminals 34A to 34E comprising metal plates a part of which is junctioned by welding to the electrode layers for terminals 32A to 32E. In this case, the terminals 34A to 34E and the electrode layers for terminals 32A to 32E are superposed and junctioned by welding.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor built in an electron tube, an electron gun assembly using the same, and an electron tube.

[0002]

2. Description of the Related Art Conventionally, in a color cathode ray tube used for an electron tube, for example, a color television receiver, a voltage supplied to an electron gun in the color cathode ray tube is a high voltage supplied to a convergence electrode, a focus electrode and the like in addition to an anode voltage. Some are needed. In this case, if a high voltage is supplied from the stem of the color cathode ray tube, a problem arises in terms of withstand voltage.Therefore, a resistor for voltage division is incorporated in the color cathode ray tube together with an electron gun as a resistor for a built-in electron tube. A method of dividing the anode voltage and supplying a high voltage to each electrode is employed.

FIG. 4 shows an example of a color cathode ray tube in which such a built-in electron tube resistor is incorporated. FIG.
In the figure, reference numeral 1 denotes a vacuum container, and an electron gun structure A is disposed inside a neck portion 1a formed in the vacuum container 1. This electron gun structure A has three cathodes,
The first grid electrode G1, the second grid electrode G2,
The third grid electrode G3, the fourth grid electrode G4, the fifth grid electrode G5, the sixth grid electrode G6, the seventh grid electrode G7, and the eighth grid electrode G8 are sequentially coaxially arranged. The convergence electrode 2 is disposed downstream of the grid electrode G8.

Each grid electrode G1, G2, G3, G4,
G5, G6, G7 and G8 are mechanically held by the bead glass 3 while maintaining a predetermined positional relationship with each other. Further, the third grid electrode G3 and the fifth grid electrode G5 are electrically connected by the conducting wire 4,
Further, the convergence electrode 2 is connected to the eighth grid electrode G
8 and is electrically connected by welding.

An electron tube built-in resistor 5 is attached to such an electron gun assembly A. This resistor 5 is provided with terminals 6a, 6b, 6c for taking out high-voltage electrodes, and these terminals 6a, 6b, 6c are connected to the seventh grid electrode G7, the sixth grid electrode G6, and the fifth grid electrode G5. Have been.

Further, an extraction terminal 7 provided on the resistor 5
Is connected to the convergence electrode 2 and the resistor 5
Are connected to a ground electrode pin 9.

On the other hand, a graphite conductive film 10 extending to the inner wall of the neck portion 1a is attached to the inner wall of the funnel portion 1b formed in the vacuum vessel 1, and a high voltage supply button provided on the funnel portion 1b is provided. An anode voltage is supplied through the anode button (not shown in the figure).

The convergence electrode 2 is provided with a conductive spring 11. The conductive spring 11 comes into contact with the graphite conductive film 10, so that the convergence electrode 2, the eighth grid electrode G 8, and the electron tube built-in resistor are provided. 5 is supplied to the convergence terminal 7, and the divided voltage generated at the high-voltage terminals 6a, 6b, 6c is supplied to the seventh grid electrode G7, the sixth grid electrode G6, and the fifth grid electrode G5. .

The electron tube built-in resistor 5 built in the color cathode ray tube is configured as shown in FIGS. FIG. 6 is a plan view showing a conventional resistor through an insulating layer forming an outer surface, FIG. 7 is a cross-sectional view taken along line YY of FIG. 6, and FIG. 8 is an enlarged plan view showing a portion where the terminal is fixed to the insulating substrate and FIG.
FIG. 9B is a cross-sectional view taken along the line ZZ in FIG.

That is, an electrode material made of, for example, a metal oxide containing ruthenium oxide and lead borosilicate glass is formed on a surface 21a of an insulating substrate 21 containing aluminum oxide as a main component by printing, drying and firing. Five terminal electrode layers 22A to 22E are formed at intervals.

[0011] As shown in FIG.
On a surface 21a of the insulating substrate 21 between 2A to 22E, a resistive material made of a metal oxide containing ruthenium oxide and lead borosilicate glass is printed, dried, and fired in a shape to obtain a predetermined resistance value. As a result, a resistor layer 23 is formed,
The resistor layer 23 is connected to each of the terminal electrode layers 22A to 22E.

As shown in FIG. 7, through holes 24 penetrating through a front surface 21a and a back surface 21b are formed in portions of the insulating substrate 21 where the terminal electrode layers 22A to 22E are formed.
Are formed. 2 located at both ends of the insulating substrate 21
The terminal electrode layers 22A and 22B have terminals 25A and 2B, respectively.
5B (corresponding to the terminals 7, 8 in FIG. 4) are arranged in contact with each other. In addition, terminals 25A on the insulating substrate 21,
Three terminal electrode layers 22 </ b> C to 22 sandwiched between 25 </ b> B
Terminals 25C to 25E (corresponding to terminals 6a to 6c in FIG. 4) are arranged in contact with E.

Each of the terminals 25A to 25E has a cylindrical portion 25a.
Each of the flange portions 25b is in contact with the terminal electrode layers 22C to 22E, and each of the cylindrical portions 25a is inserted into the through hole 24 and protrudes toward the back surface of the insulating substrate 21. It is swaged on the back surface 21b. In this way, the terminals 25A to 25E are fixed to the insulating substrate 21.

An insulating layer 26 made of glass is formed on the surface 21a of the insulating substrate 21 to cover the resistor layer 23.
An insulating layer 27 made of glass is formed on the back surface 21b.

[0015]

In order to fix the terminals 25A to 25E to the insulating substrate 21 in the conventional electron tube built-in resistor, the cylindrical portions 25a of the terminals 25A to 25E are connected to the insulating substrate 21 as described above. Of the cylindrical portion 25a protruding from the through hole 24 by applying stress to the end portion of the cylindrical portion 25a and crimping it on the back surface of the insulating substrate 21.

However, in this configuration, the terminals 25A to 25A
E may strike the back surface of the insulating substrate 21 with an impact force, and as a result, microcracks may occur on the insulating substrate 21. Then, the insulating substrate 21 may be chipped or damaged due to the micro crack.

In recent years, as the size of electron guns has been reduced, it has been required to reduce the thickness of the insulating substrate even for resistors with built-in electron tubes. However, such a thin insulating substrate has a low mechanical strength, and has a high rate of generating microcracks due to the impact force due to crimping of the terminal. Therefore, when the stress applied to the terminals 25A to 25E during crimping is reduced to prevent the occurrence of microcracks in the insulating substrate 21, the terminals 25A to 25E are
, And the pressure at which the terminals 25A to 25E contact the electrode layer of the insulating substrate 21 decreases, resulting in poor contact, and a predetermined division ratio accuracy, which is an important characteristic of a resistor, cannot be obtained.

In the method in which the terminals 25A to 25E are brought into contact with the electrode layers 22A to 22E of the insulating substrate 21 by caulking, the pressing force F is set within the concentrated resistance R (which is expressed by the following formula) which causes the contact resistance. Terminals 25A to 25
There is a problem that the total resistance value and the resistance division ratio are apt to fluctuate at the contact portions between E and the electrode layers 22A to 22E.

[0019] R = (ρA + ρB) × {(πf / nF) 1/2 / 4} (ρA, ρB: specific resistance of the contact conductor, F: contact force, f: elastic limit (hardness), n: number of contact points Further, there is a problem that the potential gradient becomes steep in the portions of the electrode layers 22A to 22E and the terminals 25A to 25E in the peripheral portion of the through hole 24 of the insulating substrate 21, so that the electric field is easily concentrated and discharge is easily caused.

Furthermore, the surfaces of the flange portions 25b of the terminals 25A to 25E which are in contact with each other for establishing electrical continuity between the terminals 25A to 25E and the electrode layers 22A to 22E and the electrode layer 22A.
There is a gap between the surface and the surface # 22E. On the other hand, in order to form the insulating layer 24 made of glass on the surface of the insulating substrate 21, the molten glass is applied to the substrate surface 21 and dried.
Let it cure. Therefore, the insulating layer 2 is formed on the surface of the insulating substrate 21.
When the molten glass is applied to the surface 21a of the substrate 21 in the vicinity of the terminals when forming the layers 6 and 27, the molten glass is applied to the surfaces of the flanges of the terminals 25A to 25E and the electrode layers 22A to 2E.
2E penetrates into the gap between the surface and the contact portion, and the terminals 25A to 25A
There is a problem that the contact resistance at the contact portion between the surface of the flange portion of E and the surfaces of the electrode layers 22A to 22E increases.

Conventionally, as a countermeasure, glass is applied to the surface of the substrate while adjusting the glass application area so that the glass melted by, for example, a screen printing method does not approach the terminals.
However, when the glass is applied to the insulating substrate 21 by using the screen printing method, the glass cannot be applied to the entire insulating substrate 21 at one time, and the three surfaces of the pair of opposing surfaces and the side surfaces of the insulating substrate 21 are not covered. Since it is necessary to separately apply the glass to the surfaces, it takes a lot of trouble to form the insulating layers 26 and 27.

The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a resistor that solves the mechanical and electrical problems that occur when connecting a terminal to an insulating substrate.

Further, the present invention provides an electron gun assembly equipped with a resistor and an electron tube equipped with the electron gun, which solve the mechanical and electrical problems that occur when connecting terminals to an insulating substrate. Make it an issue.

[0024]

According to a first aspect of the present invention, there is provided a resistor, comprising: an insulating substrate penetrating between a pair of opposing surfaces; a resistor layer formed on one surface of the insulating substrate;
A terminal electrode layer formed by being connected to the resistor layer on one surface of the insulating substrate, and a terminal partially formed of a metal plate material welded and joined to the terminal electrode layer. I do.

According to the structure of the present invention, when the terminal is connected to the electrode layer of the insulating substrate, the occurrence of microcracks in the insulating substrate is prevented, and the resistance and division ratio at the junction between the terminal and the electrode layer are prevented. Fluctuation and electric field concentration,
Further, the material for forming the insulating layer can be prevented from entering between the terminal and the electrode layer.

According to a second aspect of the present invention, in the resistor according to the first aspect, the insulating substrate is made of ceramics, the resistor layer is made of a metal oxide containing ruthenium oxide and lead borosilicate, and The electrode layer is made of non-magnetic stainless steel and / or a non-magnetic Kovar alloy, and the terminal is made of non-magnetic stainless steel.

According to the configuration of the present invention, each part of the resistor can be formed of an appropriate material. Claim 3
The invention according to claim 1 is characterized in that, in the resistor according to claim 1, the terminal and the electrode layer are superposed, welded, and joined.

According to the structure of the present invention, the terminal and the electrode layer can be securely and easily joined. According to a fourth aspect of the present invention, there is provided an electron gun assembly including the electron gun and the resistor according to the first aspect connected to the electron gun.

According to the present invention, a highly reliable electron gun assembly can be obtained. According to a fifth aspect of the present invention, there is provided an electron tube including the electron gun assembly according to the fourth aspect.

According to a sixth aspect of the present invention, in the electron tube according to the fifth aspect, a vacuum envelope having a panel portion, a phosphor layer provided on an inner surface of the panel portion, and a panel of the vacuum envelope. 5. An electron gun according to claim 4, wherein said shadow mask is disposed between said phosphor layer and said electron gun assembly. According to the configuration of the fifth and sixth aspects of the invention, a highly reliable electron tube can be obtained.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One example of a first embodiment of the present invention will be described with reference to FIGS. FIG.
FIG. 2 is a plan view showing the insulating layer forming the outer surface of the resistor according to the present embodiment, FIG. 2 is a sectional view taken along line WW of FIG. 1, and FIG. FIG. 3A is an enlarged view showing a portion where is fixed to an insulating substrate, FIG. 3A is a plan view thereof, and FIG. 3B is a cross-sectional view taken along line XX of FIG. FIG.

In the figure, reference numeral 31 denotes a strip-shaped insulating substrate, which has one surface as a front surface 31a and the other surface as a back surface 31b as shown in FIG. The insulating substrate 31 is made of, for example, aluminum oxide as a main component and a ceramic such as silicon oxide, magnesium oxide, or calcium oxide. The total amount of the alkali metal contained in the insulating substrate 31 is 0.1% in order to avoid the deterioration of the withstand voltage characteristic.
It is desirable that:

The electrode layers 32 are located at the respective electrode extraction positions on the surface 31a of the insulating substrate 31, for example, at both ends in the substrate length direction.
A and 32B, terminals 32C to 32E are formed at predetermined intervals in the length direction of the substrate between the two ends. The plurality of electrode layers 32A to 32E are for connecting terminals described later. These electrode layers 32
Is, for example, SUS316 of non-magnetic stainless steel, for example, austenitic stainless steel, or non-magnetic Kovar alloy, for example, 29 wt% Ni, 18 wt% Co, 0.3
It is composed of an alloy consisting of weight% Mn and the balance Fe. Here, the non-magnetic stainless steel is used because it is a metal material having a low vapor pressure, a small outgassing, and excellent corrosion resistance. Each electrode layer 32
As shown in FIG. 3 (a), for example, it has a disk shape so as to reliably contact a resistor layer 33 and a terminal 34 described later.

On the surface 31a of the insulating substrate 31, a resistor layer 33 extending in the longitudinal direction of the substrate is formed in such a shape as to obtain a predetermined resistance value.
Both end portions and intermediate portions in the substrate length direction are connected to the opposing electrode layers 32, respectively. As shown in FIG. 3, the junction may have a configuration in which each electrode layer 32 covers the resistor layer 33, or may have a configuration opposite thereto. The resistor layer 33 is formed, for example, by printing, drying, and firing a resistor material made of a metal oxide containing ruthenium oxide and lead borosilicate glass in a shape capable of obtaining a resistance value of a predetermined division ratio. ing.

More specifically, the resistor layer 33 is formed by forming a belt-like body in a zigzag pattern, and is formed so as to partially overlap each of the electrode layers 32A to 32E having a disk shape from the outside. I have.

Each of the electrode layers 32A to 32E formed on the surface 31a of the insulating substrate 31 has a terminal 34A for taking out an electrode.
To terminals 34A to 34E.
Is fixed to the insulating substrate 31 by a configuration described later.
A configuration for fixing the terminals 34A to 34E to the insulating substrate 31 will be described with reference to FIG.

The terminals 34A to 34E are made of conductive non-magnetic stainless steel, for example, SUS316 of austenitic stainless steel. Terminal 34
In FIGS. 3A to 3E, a rectangular electrode connecting portion 34a and a rectangular lead portion 34b are integrally formed as shown in FIG. Electrode connection part 3 of terminals 34A to 34E
5a is an electrode layer 32 formed on the surface 31a of the insulating substrate 31.
A to 32E are arranged on the outer surface so as to overlap with each other.
It is welded and joined by 2E. The contact surface of the electrode connecting portion 34a and the electrode layer 32 are
And the contact surface are closely contacted with no gap. The lead 3
4b extends outside the insulating substrate 31.

The entire surface 31a of the insulating substrate 31 (the surface 31
An insulating layer 36 is formed on the electrode layers 32A to 32E, the resistor layer 33, and the electrode connection portions 34a of the terminals 34A to 34E), and an insulating layer 37 is formed on the entire back surface 31b. Although not shown, an insulating layer is formed to cover a peripheral surface 31c connecting the front surface 31a and the back surface 31b. The insulating layers 36 and 37 are formed, for example, by printing, drying, and firing a glass material mainly containing a transition metal oxide and lead borosilicate.

The materials constituting the insulating substrate 31, the electrode layer 32, the resistor layer 33, the insulating layers 36 and 37, and the terminals 34A to 34E and the methods for forming and manufacturing the same are not limited to the examples described above, but may be conventional methods. Materials, forming and manufacturing methods can be adopted.

The electrode layers 32A to 32E and the terminals 34
The material forming A to 34E is not limited to SUS316, and can be formed of a non-magnetic austenitic stainless steel that does not exhibit ferromagnetism due to work-induced martensitic transformation in another paramagnetic material. The resistor is manufactured by the manufacturing method described below. First, a thin insulating substrate 31 mainly containing aluminum oxide and having a thickness of 0.6 mm is prepared. Surface 31a of this insulating substrate 31
Then, a ruthenium-based resist paste containing lead borosilicate-based glass is printed by a screen printing method in a slalom shape such that a predetermined division ratio can be obtained with a thickness of 2 to 20 μm,
Further, the resistor layer 33 is formed by drying at a temperature of 100 to 150 ° C. and firing at a temperature of 850 ° C. Next, the insulating substrate 3
An electrode layer 32 made of SUS316 is formed at each electrode extraction position on the first surface 31a by an ion plating method. In the electrode layer 32, the gas pressure is appropriately selected in the ion plating method, the generation of internal stress and thermal stress is suppressed, and there is no defect in the film quality of 10 μm.
The electrode layer 32 having the above thickness was formed. In addition, by employing a calcail method using a mask as the ion plating method, a large number of pieces of 1000 pieces / batch can be obtained, and the process time can be greatly reduced.
The ion plating method is characterized in that the electrode layer 32 can be formed on the surface 31a of the insulating substrate 31 with sufficient adhesion strength.

However, the present invention is not limited to this method, and other methods such as sputtering using a mask, vapor deposition, or removing a portion other than the electrode layer after forming the solid film by etching may be employed. In addition, each electrode layer 32 was formed so that a part might overlap with the resistor layer 33, respectively.

Next, terminals 34A to 34E made of SUS316 are pressed against the outer surfaces of the electrode layers 32A to 32E on the surface 31a of the insulating substrate 31, and spot welding is performed at two places at a temperature of 1000 ° C. or more by a YAG laser. Each terminal 34A-34E is connected to each electrode layer 32A-
32E was welded. The YAG laser has an output energy of 0.1 J / P or more, an output pulse width of 1 ms or more, and 10 μm.
m and thin film stainless steel terminals 34A to 34E and 10 μm
m and the electrode layers 32A to 32E having a thickness of not less than m were successfully welded and joined. The torque at the joints of the terminals 34A to 34E was 600 g · mm or more, and sufficient welding joint strength was obtained to fix the terminals 34A to 34E inside the vacuum vessel (electron tube) as described later.

Next, the insulating substrate 31 on which the electrode layers and the resistor are formed and the terminals are connected as described above is replaced with a transition metal oxide and lead borosilicate so as to cover the insulating substrate 31 and the resistor layer 32. The molten glass material as a component is immersed inside, and the material is applied to the front surface, the back surface, and the peripheral surface of the insulating substrate 31. The applied material is further dried and fired to form insulating layers 36 and 37.

The resistors thus manufactured had a total resistance of 1000 MΩ, and the division ratio of each terminal portion was accurate to ± 0.2%. Such a resistor,
In order to connect the terminals 34A to 34E to the electrode layers 32A to 32E, a through hole is formed in the insulating substrate 31 and the terminal 3
Instead of caulking 4A-34E, terminals 34A-3
4E is superimposed on the electrode layers 32A to 32E and welded by welding.

Therefore, the terminals 34A to 34E and the electrode layer 3
2A to 32E come into close contact with each other to form an insulating layer 36 on the insulating substrate 31;
The insulating layer material melted at the time of forming the
The contact resistance between the electrode layers 34E and the electrode layers 32A to 32E does not fluctuate (increase). When forming the insulating layers 36 and 37, it is not necessary to adopt a method of coating the substrate surface while adjusting the glass coating region so that the glass melted by the screen printing method does not approach the terminals, and it is not necessary to adopt a dip coating process. By adopting the method, the insulating layer material can be applied efficiently.

The terminals 34A to 34E and the electrode layer 32A
Since 32E is in close contact, the total resistance value and the resistance division at this contact portion are stabilized. Further, the terminals 34A to 34A
Since there is no through-hole in the contact portion between the electrode 4E and the electrode layers 32A to 32E, the potential gradient is gentle, the electric field is less likely to concentrate, and the discharge is less likely to occur, and the terminals 34A to 34E.
And the electrode layers 32A to 32E are formed of the same kind of nonmagnetic stainless steel, and the terminals 34A to 34E made of the nonmagnetic stainless steel are welded to the electrode layers 32A to 32E by laser welding. For this reason, the terminals 34A to 34E and the constituent electrons of the electrode layers 32A to 32E are sufficiently close to each other in order to perform the welding and joining at a temperature of 1000 ° C. or more, and the solution-formed portion in the welded structure has a high chromium resistance to oxidation. The specific resistance inside the stainless steel conductor having the (Cr) passivation film does not significantly change to 10 ⁻⁵ Ω · cm. For this reason, the small specific resistance of stainless steel can be stably maintained in each process after welding.

The terminals 34A to 34E and the electrode layers 32A to 32
E can be welded securely and easily by welding, and particularly by employing laser welding, it is possible to weld very small terminals and electrode layers.

The terminals 34A to 34E are connected to the insulating substrate 31.
When connecting to the electrode layers 32A to 32E, the insulating substrate 3
No microcracks occur in No. 1. Even when the thickness of the insulating substrate 31 is reduced to about 0.5 mm,
1 to prevent the occurrence of microcracks
4A to 34E can be fixed.

When the above-described resistor of the present invention was used for the resistor used in the electron gun structure shown in FIG. 4, a highly reliable electron gun structure was obtained. When the used electron gun structure was used as an electron gun structure used for a color cathode ray tube, a highly reliable electron tube was obtained.

FIG. 5 shows an example of the structure of a CRT. The electron tube for a cathode ray tube has a vacuum envelope 51 including a rectangular panel 52, a funnel 53 having a funnel shape, and a neck 54. On the inner surface of the panel 52, phosphor layers 55 that emit red, green, and blue light, respectively, are provided in a stripe shape. The neck 54 is provided with an in-line type electron gun 56. The electron gun 56 is configured such that the electron gun structure of this embodiment is arranged in a line along the horizontal axis of the panel 52 so that the electron guns corresponding to red, green and blue are provided. It emits a beam R. Further, a shadow mask 57 having a large number of fine holes is provided at a position close to and opposed to the phosphor layer 55 so as to be supported by a mask frame 58. A deflecting device 59 for deflecting and scanning the electron beam R to reproduce an image is provided around the outside of the neck. The above-described electron gun 56 includes the electron gun structure of the present invention, and is disposed to face the shadow mask 57.

The invention of the present application is not limited to the above-described embodiment, but can be implemented with various modifications. For example, the resistor of the present invention can be applied not only to a cathode ray tube but also to other electron tubes requiring a resistor.

[0052]

According to the first aspect of the present invention, when connecting the terminal to the electrode layer of the insulating substrate, the occurrence of microcracks in the insulating substrate is prevented, and the resistance at the junction between the terminal and the electrode layer is reduced. It is possible to obtain a resistor capable of preventing the fluctuation of the value and the division ratio and the electric field concentration, and further preventing the material forming the insulating layer from entering between the terminal and the electrode layer.

According to the fourth aspect of the invention, a highly reliable electron gun assembly can be obtained. Claim 5 and Claim 6
According to the invention, a highly reliable electron tube can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a resistor according to a first embodiment of the present invention as seen through an insulating layer.

FIG. 2 is an exemplary sectional view showing the resistor according to the embodiment;

FIG. 3 is an enlarged view showing a portion where a terminal is fixed to an insulating substrate in the embodiment.

FIG. 4 is a cross-sectional view showing an electron tube having a built-in resistor.

FIG. 5 is a sectional view showing an electron tube having a built-in resistor.

FIG. 6 is a plan view showing a conventional resistor through an insulating layer.

FIG. 7 is a cross-sectional view showing the conventional resistor.

FIG. 8 is an enlarged view showing a portion of the conventional resistor in which terminals are fixed to an insulating substrate.

[Explanation of symbols]

 31: insulating substrate, 31a: front surface, 31b: back surface, 32A to 32E: electrode layer, 33: resistor layer, 34A to 34E: insulating layer, 35: terminal, 35a: fixed portion, 35b: electrode connection portion, 35c ... Lead portions, 36, 37 ... insulating layer.

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] July 10, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction contents]

Further, in the method in which the terminals 25A to 25E are brought into contact with the electrode layers 22A to 22E of the insulating substrate 21 by caulking, the pressing force F in the concentrated resistance R (which is represented by the following formula) which causes the contact resistance is reduced. Terminals 25A to 25
There is a problem that the total resistance value and the resistance division ratio of the contact portions between E and the electrode layers 22A to 22E are likely to vary.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction contents]

According to a second aspect of the present invention, in the resistor according to the first aspect, the insulating substrate is made of ceramics, the resistor layer is made of a metal oxide containing ruthenium oxide and lead borosilicate, and electrode nonmagnetic stainless steel or Rannahli, the terminal is characterized in that it consists of non-magnetic stainless steel.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0033

[Correction method] Change

[Correction contents]

The electrode layers 32 are located at the respective electrode extraction positions on the surface 31a of the insulating substrate 31, for example, at both ends in the substrate length direction.
Terminals 32C to 32E are formed at positions A and 32B at predetermined intervals in the length direction of the substrate sandwiched between both ends. The plurality of electrode layers 32A to 32E are for connecting terminals described later. These electrode layers 32
For example nonmagnetic stainless steel, for example, made of SUS316 austenitic stainless steel. Here, the non-magnetic stainless steel is adopted because it is a metal material having a low vapor pressure, a small outgassing, and excellent corrosion resistance. Each electrode layer 32 is shown in FIG.
As shown in (a), a resistor layer 33 and a terminal 34, which will be described later,
For example, it is formed in a disk shape so as to make sure contact.

[Procedure amendment 5]

[Document name to be amended] Drawing

[Correction target item name] Fig. 4

[Correction method] Change

[Correction contents]

FIG. 4

Claims (6)

[Claims] 1. An insulating substrate penetrating between a pair of opposing surfaces, a resistor layer formed on one surface of the insulating substrate, and a resistor layer connected to one surface of the insulating substrate. A resistor comprising: a terminal electrode layer formed as described above; and a terminal partially formed of a metal plate material welded to the terminal electrode layer. 2. The insulating substrate is made of ceramics,
The resistor layer is made of a metal oxide containing ruthenium oxide and lead borosilicate; the terminal electrode layer is made of a non-magnetic stainless steel and / or a non-magnetic Kovar alloy; and the terminal is made of a non-magnetic stainless steel. The resistor according to claim 1, characterized in that: 3. The resistor according to claim 1, wherein the terminal and the electrode layer are joined by being polymerized and welded. 4. An electron gun assembly comprising: an electron gun; and the resistor according to claim 1 connected to the electron gun. 5. An electron tube comprising the electron gun assembly according to claim 4. 6. A vacuum envelope having a panel portion, a phosphor layer provided on an inner surface of the panel portion, and a phosphor layer disposed at a position facing the inner surface of the panel portion of the vacuum envelope.
The electron tube according to claim 5, further comprising: an electron gun assembly according to (1), and a shadow mask disposed between the phosphor layer and the electron gun assembly.