JPH1177778A - Reduction of deformation of disk substrate - Google Patents

Reduction of deformation of disk substrate

Info

Publication number
JPH1177778A
JPH1177778A JP24496197A JP24496197A JPH1177778A JP H1177778 A JPH1177778 A JP H1177778A JP 24496197 A JP24496197 A JP 24496197A JP 24496197 A JP24496197 A JP 24496197A JP H1177778 A JPH1177778 A JP H1177778A
Authority
JP
Japan
Prior art keywords
disk substrate
peripheral portion
temperature
deformation
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24496197A
Other languages
Japanese (ja)
Inventor
Shoji Yokota
章司 横田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP24496197A priority Critical patent/JPH1177778A/en
Publication of JPH1177778A publication Critical patent/JPH1177778A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To reduce the deformation of a disk substrate by holding the inner and outer peripheral parts of the disk substrate made of plastic produced by injection molding under a temp. condition satisfying a plurality of specific formulae at the same time. SOLUTION: The inner and outer peripheral parts of the disk substrate made of plastic produced by injection molding are held under a temp. condition simultaneously satisfying a formula (1); Tin -Tout >=50 deg.C and formula (2); Tp +30 deg.C>=Tin >=Tp -50 deg.C [wherein Tin is the temp. ( deg.C) of the inner periphery part of the disk substrate; Tout is the temp. ( deg.C) of the outer peripheral part of the disk substrate; and Tp is the thermal deformation temp. (1) of the disk substrate]. A holding time is usually set to 3 sec or more and heat treatment is pref. performed so that the inner peripheral part is present in a region within 1/3 a radius when the center of the disk substrate is set to a start point and the outer peripheral part is present in the region outside 1/3 the radius.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光ディスク等に用い
られるプラスチック製ディスク基板の変形を低減させる
方法に関するものである。
The present invention relates to a method for reducing deformation of a plastic disk substrate used for an optical disk or the like.

【0002】[0002]

【従来の技術】近年、大容量、高速のメモリ媒体として
光記録媒体が注目されている。光記録媒体としては再生
専用型光ディスク(CD、CD−ROM、DVD−RO
M、LD等)、記録再生型光ディスク(WO、CD−
R、DVD−R等)、記録、再生、消去、再書込可能型
光ディスク(CD−RW、PD、MO、DVD−RA
M)等が知られている。これらの光記録媒体の基板とし
ては、一般にポリカーボネート樹脂やアクリル樹脂等の
プラスチック製のものが用いられている。
2. Description of the Related Art In recent years, optical recording media have attracted attention as large-capacity, high-speed memory media. As optical recording media, read-only optical disks (CD, CD-ROM, DVD-RO
M, LD, etc.), recording / reproducing optical discs (WO, CD-
R, DVD-R, etc.), recordable, reproduced, erased, and rewritable optical discs (CD-RW, PD, MO, DVD-RA)
M) are known. As a substrate of these optical recording media, a plastic substrate such as a polycarbonate resin or an acrylic resin is generally used.

【0003】これらのディスク基板は、通常は射出圧縮
成形法を含むいわゆる射出成形法により製造されてい
る。この方法は、固定金型と可動金型との間に形成され
るキャビティー内にプリフォーマット情報を有する環状
の平坦なスタンパーを取付け、キャビティー内に溶融樹
脂材を導入することによって、スタンパーの信号(ピッ
ト)やレーザー案内溝等のプリフォーマット情報が転写
されたディスク基板を成形する方法である。
[0003] These disk substrates are usually manufactured by a so-called injection molding method including an injection compression molding method. According to this method, an annular flat stamper having preformat information is mounted in a cavity formed between a fixed mold and a movable mold, and a molten resin material is introduced into the cavity to form a stamper. This is a method of molding a disk substrate on which preformat information such as signals (pits) and laser guide grooves is transferred.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、この成
形法により製造されたディスク基板には、変形が生じる
という問題がある。これは主として、成形時における剪
断応力による分子配向歪と熱応力による歪とによるもの
と考えられる。変形の程度は成形条件に依存し、一般に
生産性向上のために成形サイクルを短縮させたり、金型
温度を上昇させたりすると、変形が増大する。またディ
スク基板の厚さを薄くしても変形が増大する。変形を低
減させる方法として、従来からディスク基板を加熱処理
することが提案されている。しかし従来の加熱処理では
効果が小さいので、更なる改善が望まれている。本発明
はこの要望に応えようとするものである。
However, there is a problem that the disk substrate manufactured by this molding method is deformed. It is considered that this is mainly due to molecular orientation distortion due to shear stress during molding and distortion due to thermal stress. The degree of deformation depends on the molding conditions. Generally, when the molding cycle is shortened or the mold temperature is increased to improve productivity, the deformation increases. Further, even if the thickness of the disk substrate is reduced, the deformation increases. As a method of reducing deformation, heat treatment of a disk substrate has been conventionally proposed. However, the conventional heat treatment has a small effect, and further improvement is desired. The present invention addresses this need.

【0005】[0005]

【課題を解決するための手段】本発明によれば、射出成
形によって製造されたプラスチック製ディスク基板を、
その内周部と外周部とが下記の(1)式及び(2)式を
同時に満足する温度条件下に保持することにより、ディ
スク基板の変形を低減することができる。
According to the present invention, a plastic disk substrate manufactured by injection molding is provided.
By maintaining the inner peripheral portion and the outer peripheral portion under temperature conditions that simultaneously satisfy the following expressions (1) and (2), deformation of the disk substrate can be reduced.

【0006】[0006]

【化3】 Tin−Tout ≧50℃ …(1) Tp +30℃≧Tin≧Tp −50℃ …(2) ここで Tin : ディスク基板の内周部温度(℃) Tout : ディスク基板の外周部温度(℃) Tp : ディスク基板の熱変形温度(℃)Embedded image T in -T out ≧ 50 ℃ ... (1) T p + 30 ℃ ≧ T in ≧ T p -50 ℃ ... (2) where T in: the inner peripheral portion temperature of the disk substrate (° C.) T out : Outer peripheral temperature of disk substrate (° C) T p : Thermal deformation temperature of disk substrate (° C)

【0007】[0007]

【発明の実施の形態】本発明について詳細に説明する
と、本発明では、射出成形により製造されたプラスチッ
ク製ディスク基板を、内周部を高温に外周部を低温に
と、両者間に温度差を設けて熱処理する。これにより、
残留応力が解消されるので、ディスク基板の変形も低減
するものと考えられる。本発明では、ポリカーボネート
樹脂やアクリル樹脂等を用いて、射出成形により製造さ
れた、プラスチック製のディスク基板を熱処理の対象と
する。ディスク基板の大きさは規格により異なるが、通
常は直径50〜300mm、特に80〜135mm、厚
さ0.5〜1.5mm程度である。本発明では、このデ
ィスク基板の内周部と外周部とが、下記の(1)式及び
(2)式を同時に満足する温度条件下に、ディスク基板
を保持する。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail. In the present invention, a plastic disc substrate manufactured by injection molding is prepared by setting an inner peripheral portion to a high temperature and an outer peripheral portion to a low temperature, and reducing a temperature difference between the two. And heat treatment. This allows
It is considered that since the residual stress is eliminated, the deformation of the disk substrate is also reduced. In the present invention, a plastic disk substrate manufactured by injection molding using a polycarbonate resin, an acrylic resin, or the like is subjected to a heat treatment. The size of the disk substrate varies depending on the standard, but is usually about 50 to 300 mm in diameter, particularly about 80 to 135 mm, and about 0.5 to 1.5 mm in thickness. In the present invention, the inner peripheral portion and the outer peripheral portion of the disk substrate hold the disk substrate under a temperature condition that simultaneously satisfies the following expressions (1) and (2).

【0008】[0008]

【化4】 Tin−Tout ≧50℃ …(1) Tp +30℃≧Tin≧Tp −50℃ …(2) ここに Tin : ディスク基板の内周部温度(℃) Tout : ディスク基板の外周部温度(℃) Tp : ディスク基板の熱変形温度(℃)Embedded image T in -T out ≧ 50 ℃ ... (1) T p + 30 ℃ ≧ T in ≧ T p -50 ℃ ... (2) Here T in: the inner peripheral portion temperature of the disk substrate (° C.) T out : Outer peripheral temperature of disk substrate (° C) T p : Thermal deformation temperature of disk substrate (° C)

【0009】内周部と外周部との温度差が50℃未満で
は、ディスク基板全体を均一に熱処理する従来法と同様
に、十分な変形低減効果が得られない。また内周部の温
度がディスクの熱変形温度よりも50℃より低い場合に
は、熱処理による応力緩和が十分に進まないせいか、変
形低減効果が乏しい。逆に内周部の温度がディスクの熱
変形温度よりも30℃を越えて高い場合には、熱処理中
にディスク基板が重力などの作用で変形する危険性があ
る。好ましくは、下記の(3)式及び(4)式を同時に
満足する温度条件下でディスク基板を熱処理する。
If the temperature difference between the inner peripheral portion and the outer peripheral portion is less than 50 ° C., a sufficient deformation reduction effect cannot be obtained as in the conventional method for uniformly heat treating the entire disk substrate. When the temperature of the inner peripheral portion is lower than the thermal deformation temperature of the disk by 50 ° C., the effect of reducing the deformation is poor, probably because the stress relaxation by the heat treatment does not proceed sufficiently. Conversely, if the temperature of the inner peripheral portion is higher than the thermal deformation temperature of the disk by more than 30 ° C., there is a risk that the disk substrate is deformed by the action of gravity or the like during the heat treatment. Preferably, the disk substrate is heat-treated under a temperature condition that satisfies the following equations (3) and (4) simultaneously.

【0010】[0010]

【化5】 80℃≧Tin−Tout ≧60℃ …(3) Tp +20℃≧Tin≧Tp −30℃ …(4)## STR00005 ## 80 ℃ ≧ T in -T out ≧ 60 ℃ ... (3) T p + 20 ℃ ≧ T in ≧ T p -30 ℃ ... (4)

【0011】ディスク基板を上記(1)式及び(2)
式、好ましくは(3)式及び(4)式を同時に満足する
温度条件下に保持する時間は、基板の成形条件や基板の
厚さなどにより異なるが、通常は3秒間以上であり、5
秒間以上であるのが好ましい。保持時間が短かすぎる
と、当然のことながら、十分な変形低減効果は得られな
い。保持時間が長いことは、変形を低減させる点からは
差支えないが、生産性を低下させる。通常は長くても3
0秒、特に20秒以下に止めるのが好ましい。
The disk substrate is replaced by the above formula (1) and (2)
The time during which the temperature is preferably maintained under the temperature condition that simultaneously satisfies the expression, preferably the expression (3) and the expression (4), varies depending on the molding conditions of the substrate, the thickness of the substrate, and the like.
It is preferably for at least seconds. If the holding time is too short, of course, a sufficient deformation reducing effect cannot be obtained. A longer holding time is acceptable in terms of reducing deformation, but reduces productivity. Usually at most 3
It is preferable to keep the time to 0 seconds, especially 20 seconds or less.

【0012】本発明では、ディスク基板の中心を起点と
して、半径の1/3よりも内側の領域に内周部、それよ
りも外側の領域に外周部が存在するように熱処理するの
が好ましい。通常は1/3よりも内側のほぼ全領域が内
周部となるようにするのが好ましい。しかし場合によっ
ては内周部が半径の1/3を越えて外側に延びていても
差支えない。しかし、いかなる場合でも半径の1/2を
越えてはならず、半径の2/5以内にあるのが好まし
い。
In the present invention, it is preferable that the heat treatment is performed such that the inner peripheral portion is located in a region inside a radius of 1/3 and the outer peripheral portion is located in a region outside the radius, starting from the center of the disk substrate. Normally, it is preferable that almost the entire area inside one-third is the inner peripheral part. However, in some cases, the inner peripheral portion may extend beyond one third of the radius to the outside. However, it should not exceed 1/2 of the radius in any case, and is preferably within 2/5 of the radius.

【0013】また外周部も半径の1/3よりも外側の全
領域である必要はないが、少なくとも半径の2/3より
も外側の全領域は外周部であるのが好ましい。通常は外
周部と内周部との温度差を発生させる手段の許す限り、
内周部と外周部とは近接させるのが好ましい。内周部と
外周部とに所定の温度差を発生させる手段は任意であ
る。例えばディスク基板全体を所定の内周部温度又はそ
れよりも若干高温に加熱し、次いで外周部だけに低温の
金属のような伝熱性の良い低温の物体を接触させて急冷
して所定の温度差を発生させるか、又は急冷したのち全
体を徐冷することにより所定の温度差を発生させること
ができる。この変形として、全体が高温に加熱されたデ
ィスク基板の内周部だけを高温の物体に接触させて温度
低下するのを防止しつつ、外周部を空冷して所定の温度
差を発生させるか、又は空冷により外周部が成る程度降
温したら高温の物体を取外して全体を降温させることに
より、所定の温度差を発生させることもできる。この方
法は例えば成形直後の高温のディスク基板に適用する
と、生産性よく行うことができる。
Also, the outer peripheral portion does not need to be the entire region outside the radius of 1/3, but at least the entire region outside the radius of 2/3 is preferably the peripheral region. Normally, as long as the means for generating a temperature difference between the outer peripheral portion and the inner peripheral portion allow,
It is preferable that the inner peripheral portion and the outer peripheral portion are close to each other. Means for generating a predetermined temperature difference between the inner peripheral portion and the outer peripheral portion is arbitrary. For example, the entire disk substrate is heated to a predetermined inner peripheral part temperature or slightly higher than it, and then is contacted only with the outer peripheral part with a low-temperature conductive object such as a low-temperature metal to rapidly cool to a predetermined temperature difference. Or a predetermined temperature difference can be generated by rapidly cooling and then gradually cooling the whole. As this deformation, while preventing the temperature from dropping by bringing only the inner peripheral portion of the disk substrate entirely heated to a high temperature into a high-temperature object, the outer peripheral portion is air-cooled to generate a predetermined temperature difference, Alternatively, a predetermined temperature difference can be generated by removing the high-temperature object and lowering the temperature of the whole after the temperature is reduced to such an extent that the outer peripheral portion is formed by air cooling. If this method is applied to, for example, a high-temperature disk substrate immediately after molding, it can be performed with high productivity.

【0014】また別法として、低温のディスク基板の内
周部だけに高温の金属などを接触させて加熱し、所定の
温度差を発生させる方法によることもできる。本発明方
法によりディスク基板の変形が低減される理由は明らか
ではないが、射出成形に際してはディスク基板の内周部
に相対的に大きな応力が残留しているのが、内周部が高
温に加熱されることによりこの応力が解放されて、ディ
スク基板の残留応力が全体として低下し且つ均一化する
ことによるものと考えられる。
As another method, a method may be employed in which a high-temperature metal or the like is brought into contact with only the inner peripheral portion of a low-temperature disk substrate and heated to generate a predetermined temperature difference. Although it is not clear why the method of the present invention reduces the deformation of the disk substrate, during injection molding, relatively large stress remains in the inner peripheral portion of the disk substrate, but the inner peripheral portion is heated to a high temperature. It is considered that this stress is released by this, and the residual stress of the disk substrate is reduced as a whole and made uniform.

【0015】実施例1 ポリカーボネート樹脂(熱変形温度120℃)を用い
て、外径120mm、内径15mm、厚さ0.6mmの
光ディスク基板を、射出成形により製造した。射出成形
は金型温度130℃、溶融樹脂温度380℃で行った。
得られたディスク基板を常温まで冷却したのち、120
℃に加熱された直径30mmの金属厚板の上に、ディス
ク基板を同心に10秒間載置した。このときディスク基
板の中心から7.5〜15mmの部分は120℃に、4
0〜50mmの部分は40℃に昇温した。金属厚板から
ディスク基板を外し、常温に放置したところ、中心から
7.5〜15mmの部分が100℃に降温するまでに約
5秒間かかった。この熱処理を経たディスク基板の、中
心から23〜58mmの領域の円周方向及び半径方向の
変形量の平均値を図1に示す。なお、測定は、回転ステ
ージと、このステージの回転中心を原点として回転面と
平行に移動する非接触型のレーザー変位計を装備した変
位測定装置を用いて行った。レーザー変位計を半径方向
に移動させて測定位置を定め、回転ステージにディスク
基板を載置して回転させると、その半径方向位置におけ
る円周方向の変形量の平均値が得られる。
Example 1 An optical disk substrate having an outer diameter of 120 mm, an inner diameter of 15 mm, and a thickness of 0.6 mm was produced by injection molding using a polycarbonate resin (heat deformation temperature: 120 ° C.). Injection molding was performed at a mold temperature of 130 ° C. and a molten resin temperature of 380 ° C.
After cooling the obtained disk substrate to normal temperature,
The disk substrate was concentrically placed on a metal thick plate having a diameter of 30 mm heated to ° C. for 10 seconds. At this time, the portion 7.5 to 15 mm from the center of the disk substrate is heated to 120 ° C.
The temperature from 0 to 50 mm was raised to 40 ° C. When the disk substrate was removed from the metal thick plate and allowed to stand at room temperature, it took about 5 seconds for the portion 7.5 to 15 mm from the center to cool to 100 ° C. FIG. 1 shows the average values of the amounts of deformation in the circumferential direction and the radial direction of a region of 23 to 58 mm from the center of the disk substrate that has undergone this heat treatment. The measurement was performed using a rotary stage and a displacement measuring device equipped with a non-contact type laser displacement meter that moves parallel to the rotation surface with the rotation center of the stage as the origin. When the measurement position is determined by moving the laser displacement meter in the radial direction, and the disk substrate is mounted on the rotary stage and rotated, an average value of the amount of deformation in the circumferential direction at the radial position is obtained.

【0016】比較例1 実施例1で射出成形により製造したままで熱処理してい
ないディスク基板について、実施例1と同様にして変形
量の平均値を測定した。結果を図1に示す。
COMPARATIVE EXAMPLE 1 The average value of the amount of deformation was measured in the same manner as in Example 1 for the disk substrate which was manufactured by injection molding in Example 1 and was not heat-treated. The results are shown in FIG.

【0017】比較例2 実施例1で射出成形により製造したディスク基板を、1
20℃に30秒間加熱したのち放冷した。このものにつ
いて実施例1と同様にして変形量の平均値を測定した。
結果を図1に示す。
Comparative Example 2 The disk substrate manufactured by injection molding in Example 1 was replaced with 1
After heating to 20 ° C. for 30 seconds, it was allowed to cool. The average value of the amount of deformation was measured in the same manner as in Example 1.
The results are shown in FIG.

【0018】実施例2 実施例1で射出成形により製造したディスク基板を、1
20℃に30秒間加熱したのち、120℃に加熱された
直径30mmの金属厚板に同心に載置した。約20秒後
にディスク基板の中心から7.5〜15mmまでの領域
は約120℃のままであったが、中心から40〜50m
mの領域は約50℃に降温していた。この時点で金属厚
板からディスク基板を外し、常温に放置したところ、約
5秒で中心から7.5〜15mmまでの領域が100℃
に降温した。この熱処理を経たディスク基板の、中心か
ら58mmの位置の円周方向の変形量の測定結果を図2
に示す。
Example 2 The disk substrate manufactured by injection molding in Example 1 was replaced with 1
After heating to 20 ° C. for 30 seconds, it was concentrically mounted on a 30 mm diameter metal plate heated to 120 ° C. After about 20 seconds, the area from 7.5 to 15 mm from the center of the disk substrate remained at about 120 ° C., but was 40 to 50 m from the center.
In the area of m, the temperature dropped to about 50 ° C. At this point, when the disk substrate was removed from the metal plate and left at room temperature, the area from the center to 7.5 to 15 mm from the center was 100 ° C in about 5 seconds.
The temperature dropped. FIG. 2 shows the measurement results of the amount of deformation in the circumferential direction at a position 58 mm from the center of the disk substrate that has undergone this heat treatment.
Shown in

【0019】比較例3 実施例1で射出成形により製造したままで熱処理してい
ないディスク基板について、実施例2と同様にして、中
心から58mmの位置の円周方向の変形量を測定した。
結果を図2に示す。
COMPARATIVE EXAMPLE 3 With respect to the disk substrate manufactured by injection molding in Example 1 and not heat-treated, the amount of deformation in the circumferential direction at a position 58 mm from the center was measured in the same manner as in Example 2.
The results are shown in FIG.

【図面の簡単な説明】[Brief description of the drawings]

【図1】射出成形により製造したポリカーボネート樹脂
製ディスク基板(内径15mm、外径120mm、厚さ
0.6mm)の、円周方向の変形量の平均値を示すグラ
フである。
FIG. 1 is a graph showing the average value of the amount of deformation in the circumferential direction of a polycarbonate resin disk substrate (inner diameter 15 mm, outer diameter 120 mm, thickness 0.6 mm) manufactured by injection molding.

【図2】射出成形により製造したポリカーボネート樹脂
製ディスク基板(内径15mm、外径120mm、厚さ
0.6mm)の、中心から58mmの位置における円周
方向の変形量を示すグラフである。
FIG. 2 is a graph showing the amount of circumferential deformation of a polycarbonate resin disk substrate (inner diameter 15 mm, outer diameter 120 mm, thickness 0.6 mm) manufactured by injection molding at a position 58 mm from the center.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 射出成形によって製造されたプラスチッ
ク製ディスク基板を、その内周部と外周部とが下記の
(1)式及び(2)式を同時に満足する温度条件下に保
持することを特徴とするディスク基板の変形低減方法。 【化1】 Tin−Tout ≧50℃ …(1) Tp +30℃≧Tin≧Tp −50℃ …(2) ここで Tin : ディスク基板の内周部温度(℃) Tout : ディスク基板の外周部温度(℃) Tp : ディスク基板の熱変形温度(℃)
1. A plastic disk substrate manufactured by injection molding is maintained under a temperature condition in which an inner peripheral portion and an outer peripheral portion simultaneously satisfy the following expressions (1) and (2). To reduce the deformation of the disk substrate. ## STR1 ## T in -T out ≧ 50 ℃ ... (1) T p + 30 ℃ ≧ T in ≧ T p -50 ℃ ... (2) where T in: the inner peripheral portion temperature of the disk substrate (° C.) T out : Outer peripheral temperature of disk substrate (° C) T p : Thermal deformation temperature of disk substrate (° C)
【請求項2】 プラスチック製ディスク基板を(1)式
及び(2)式を同時に満足する温度条件下に3秒間以上
保持することを特徴とする、請求項1記載のディスク基
板の変形低減方法。
2. The method for reducing deformation of a disk substrate according to claim 1, wherein the plastic disk substrate is held for at least 3 seconds under a temperature condition that simultaneously satisfies the expressions (1) and (2).
【請求項3】 射出成形によって製造されたプラスチッ
ク製ディスク基板を、その内周部と外周部とが下記の
(3)式及び(4)式を同時に満足する温度条件下に保
持することを特徴とするディスク基板の変形低減方法。 【化2】 80℃≧Tin−Tout ≧60℃ …(3) Tp +20℃≧Tin≧Tp −30℃ …(4) ここで Tin : ディスク基板の内周部温度(℃) Tout : ディスク基板の外周部温度(℃) Tp : ディスク基板の熱変形温度(℃)
3. A plastic disk substrate manufactured by injection molding is maintained under such a temperature condition that an inner peripheral portion and an outer peripheral portion simultaneously satisfy the following expressions (3) and (4). To reduce the deformation of the disk substrate. ## STR2 ## 80 ℃ ≧ T in -T out ≧ 60 ℃ ... (3) T p + 20 ℃ ≧ T in ≧ T p -30 ℃ ... (4) where T in: the inner peripheral portion temperature of the disk substrate (℃ ) T out : Outer peripheral temperature of disk substrate (° C) T p : Thermal deformation temperature of disk substrate (° C)
【請求項4】 プラスチック製ディスク基板を(3)式
及び(4)式を同時に満足する温度条件下に3秒間以上
保持することを特徴とする、請求項3記載のディスク基
板の変形低減方法。
4. The method for reducing deformation of a disk substrate according to claim 3, wherein the plastic disk substrate is held for at least 3 seconds under a temperature condition that simultaneously satisfies the expressions (3) and (4).
【請求項5】 基板の中心を起点にして、内周部が基板
の半径の1/3より内側にある領域であり、外周部が基
板の半径の1/3より外側にある領域であることを特徴
とする、請求項1ないし4のいずれかに記載のディスク
基板の変形低減方法。
5. Starting from the center of the substrate, the inner peripheral portion is a region inside one third of the radius of the substrate, and the outer peripheral portion is a region outside one third of the radius of the substrate. The method for reducing deformation of a disk substrate according to any one of claims 1 to 4, wherein:
【請求項6】 プラスチック製ディスク基板が、ポリカ
ーボネート製であることを特徴とする、請求項1ないし
5のいずれかに記載のディスク基板の変形低減方法。
6. The method for reducing deformation of a disk substrate according to claim 1, wherein the plastic disk substrate is made of polycarbonate.
【請求項7】 高温に加熱されている熱板にプラスチッ
ク製ディスク基板の内周部だけを接触させて内周部を選
択的に加熱することを特徴とする、請求項1ないし6の
いずれかに記載のディスク基板の変形低減方法。
7. The method according to claim 1, wherein only the inner peripheral portion of the plastic disk substrate is brought into contact with a hot plate heated to a high temperature to selectively heat the inner peripheral portion. 3. The method for reducing deformation of a disk substrate according to item 1.
【請求項8】 高温に加熱されているプラスチック製デ
ィスク基板の外周部だけを、低温の物体に接触させて外
周部を選択的に冷却することを特徴とする、請求項1な
いし6のいずれかに記載のディスク基板の変形低減方
法。
8. The method according to claim 1, wherein only the outer peripheral portion of the plastic disk substrate heated to a high temperature is brought into contact with a low-temperature object to selectively cool the outer peripheral portion. 3. The method for reducing deformation of a disk substrate according to item 1.
JP24496197A 1997-09-10 1997-09-10 Reduction of deformation of disk substrate Pending JPH1177778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24496197A JPH1177778A (en) 1997-09-10 1997-09-10 Reduction of deformation of disk substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24496197A JPH1177778A (en) 1997-09-10 1997-09-10 Reduction of deformation of disk substrate

Publications (1)

Publication Number Publication Date
JPH1177778A true JPH1177778A (en) 1999-03-23

Family

ID=17126537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24496197A Pending JPH1177778A (en) 1997-09-10 1997-09-10 Reduction of deformation of disk substrate

Country Status (1)

Country Link
JP (1) JPH1177778A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515672A (en) * 2004-10-07 2008-05-15 バイオメット、マニュファクチュアリング、コーポレイション Cross-linked polymeric material with improved strength and manufacturing method
US9017590B2 (en) 2004-10-07 2015-04-28 Biomet Manufacturing, Llc Solid state deformation processing of crosslinked high molecular weight polymeric materials
US9421104B2 (en) 2007-07-27 2016-08-23 Biomet Manufacturing, Llc Antioxidant doping of crosslinked polymers to form non-eluting bearing components
US9586370B2 (en) 2013-08-15 2017-03-07 Biomet Manufacturing, Llc Method for making ultra high molecular weight polyethylene

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515672A (en) * 2004-10-07 2008-05-15 バイオメット、マニュファクチュアリング、コーポレイション Cross-linked polymeric material with improved strength and manufacturing method
US9017590B2 (en) 2004-10-07 2015-04-28 Biomet Manufacturing, Llc Solid state deformation processing of crosslinked high molecular weight polymeric materials
US9421104B2 (en) 2007-07-27 2016-08-23 Biomet Manufacturing, Llc Antioxidant doping of crosslinked polymers to form non-eluting bearing components
US9586370B2 (en) 2013-08-15 2017-03-07 Biomet Manufacturing, Llc Method for making ultra high molecular weight polyethylene

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