JPH1165111A - Forming method of resist film and production of microstructural body - Google Patents
Forming method of resist film and production of microstructural bodyInfo
- Publication number
- JPH1165111A JPH1165111A JP9217823A JP21782397A JPH1165111A JP H1165111 A JPH1165111 A JP H1165111A JP 9217823 A JP9217823 A JP 9217823A JP 21782397 A JP21782397 A JP 21782397A JP H1165111 A JPH1165111 A JP H1165111A
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- Prior art keywords
- resist
- film
- pmma
- raw material
- material liquid
- Prior art date
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、レジスト膜を形成
する方法及び超小型構造体の作製方法に関し、特にＬＩ
ＧＡ技術に好適な厚いレジスト膜を形成する方法、及び
そのレジスト膜を用いた超小型構造体の作製方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a resist film and a method for manufacturing a microstructure, and more particularly, to a method for manufacturing an LI.
The present invention relates to a method for forming a thick resist film suitable for the GA technique, and a method for manufacturing a microstructure using the resist film.
【０００２】[0002]
【従来の技術】超小型構造体の製造技術として、ＬＩＧ
Ａ技術が知られている。以下、ＬＩＧＡ技術について簡
単に説明する。2. Description of the Related Art As a manufacturing technique of a micro structure, LIG is used.
A technology is known. Hereinafter, the LIGA technology will be briefly described.
【０００３】導電性の支持基板の表面上にレジスト膜を
形成する。このレジスト膜をコントラストの高いＬＩＧ
Ａ用マスクを用いてＸ線により部分的に露光し、レジス
ト膜を現像する。レジスト膜の除去された領域を、金属
メッキにより埋め込む。残っているレジスト膜を除去す
ることにより、金属からなる超小型構造体が得られる。A resist film is formed on the surface of a conductive support substrate. Using this resist film as a high contrast LIG
The resist film is partially exposed to X-rays using an A mask. The region where the resist film has been removed is buried by metal plating. By removing the remaining resist film, a microstructure made of metal can be obtained.
【０００４】立体的な超小型構造体を作製するには、厚
さ数１００μｍ以上のレジスト膜を形成する必要があ
る。In order to manufacture a three-dimensional microminiature structure, it is necessary to form a resist film having a thickness of several hundred μm or more.
【０００５】図３は、特表平７−５０７３５５号公報に
開示された厚いレジスト膜の形成方法を示す。シリコン
基板５０の表面上に、導電膜５１が形成されている。導
電膜５１の表面上に、ある閉曲線に沿ってスペーサ５２
を配置する。液状のメチルメタクリレート（ＭＭＡ）に
ポリメチルメタクリレート（ＰＭＭＡ）を溶解し、さら
に重合開始剤を添加したレジスト原料液５３を、導電膜
５１の表面のうちスペーサ５２で囲まれた領域上に滴下
する。FIG. 3 shows a method of forming a thick resist film disclosed in Japanese Patent Publication No. 7-507355. On the surface of the silicon substrate 50, a conductive film 51 is formed. A spacer 52 is formed on the surface of the conductive film 51 along a closed curve.
Place. A resist raw material liquid 53 in which polymethyl methacrylate (PMMA) is dissolved in liquid methyl methacrylate (MMA) and a polymerization initiator is further added is dropped on a region of the surface of the conductive film 51 surrounded by the spacer 52.
【０００６】加圧部材５４でレジスト原料液５３を加圧
し、レジスト原料液５３を、導電膜５１、スペーサ５２
及び加圧部材５４により画定された空間内に閉じ込め
る。この状態で重合反応を起こさせることにより、スペ
ーサ層５２の高さとほぼ等しい厚さのＰＭＭＡ膜を得
る。A resist material liquid 53 is pressurized by a pressure member 54, and the resist material liquid 53 is applied to the conductive film 51 and the spacer 52.
And within the space defined by the pressure member 54. By causing a polymerization reaction in this state, a PMMA film having a thickness substantially equal to the height of the spacer layer 52 is obtained.
【０００７】図４は、特開平７−９２６８７号公報に開
示された厚いレジスト膜の形成方法を示す。シリコン基
板６０の表面上に導電膜６１が形成されている。導電膜
６１の表面上に、薄いＰＭＭＡ膜６２をスピン塗布す
る。ＰＭＭＡ膜６２の上に、液状のＭＭＡ液６３を滴下
し、その上に厚いＰＭＭＡ膜６４を載置する。加圧部材
６５により、厚いＰＭＭＡ膜６４を基板６０に押しつ
け、ＭＭＡ液６３を重合させる。厚いＰＭＭＡ膜６４が
薄いＰＭＭＡ膜６２に接着され、導電膜６１に接着した
厚いＰＭＭＡ膜を得ることができる。FIG. 4 shows a method for forming a thick resist film disclosed in Japanese Patent Application Laid-Open No. 7-92687. A conductive film 61 is formed on the surface of a silicon substrate 60. A thin PMMA film 62 is spin-coated on the surface of the conductive film 61. A liquid MMA liquid 63 is dropped on the PMMA film 62, and a thick PMMA film 64 is placed thereon. The pressure member 65 presses the thick PMMA film 64 against the substrate 60 to polymerize the MMA liquid 63. The thick PMMA film 64 is bonded to the thin PMMA film 62, and a thick PMMA film bonded to the conductive film 61 can be obtained.
【０００８】[0008]
【発明が解決しようとする課題】図３に示す従来例によ
る方法では、重合中の体積の収縮によりＰＭＭＡ膜の厚
さが不均一になりやすい。また、内部応力によるクラッ
クが発生する場合もある。In the conventional method shown in FIG. 3, the thickness of the PMMA film tends to be non-uniform due to volume shrinkage during polymerization. In addition, cracks may occur due to internal stress.
【０００９】図４に示す従来例による方法で形成された
レジスト膜は、当初スピン塗布されたＰＭＭＡ膜６２、
ＭＭＡ液６３が重合したＰＭＭＡ膜、及び当初の厚いＰ
ＭＭＡ膜６４の３層からなり、各層の組成が相互に相違
しやすい。このため、厚さ方向に関して一様な組成のＰ
ＭＭＡ膜を得ることが困難である。A resist film formed by the method according to the conventional example shown in FIG.
PMMA film polymerized with MMA liquid 63 and initially thick P
It is composed of three layers of the MMA film 64, and the composition of each layer tends to be different from each other. For this reason, P having a uniform composition in the thickness direction
It is difficult to obtain an MMA film.
【００１０】本発明の目的は、厚さが均一であり、組成
の一様な厚いＰＭＭＡ膜を得るのに適したＰＭＭＡ膜の
形成方法を提供することである。An object of the present invention is to provide a method for forming a PMMA film having a uniform thickness and suitable for obtaining a thick PMMA film having a uniform composition.
【００１１】[0011]
【課題を解決するための手段】本発明の一観点による
と、主表面を有する支持基板を準備する工程と、液状の
ＭＭＡにＰＭＭＡを溶解させ、重合開始剤を添加したレ
ジスト原料液を前記支持基板の主表面上に塗布する工程
と、塗布された前記レジスト原料液を挟み込むように、
前記支持基板の主表面の上にＰＭＭＡ膜を載置する工程
と、前記レジスト原料液中のＭＭＡを重合させ、前記Ｐ
ＭＭＡ膜を前記支持基板に接着する工程とを含むレジス
ト膜の形成方法が提供される。According to one aspect of the present invention, there is provided a step of preparing a supporting substrate having a main surface, and dissolving PMMA in liquid MMA and supporting a resist raw material liquid to which a polymerization initiator is added. A step of applying on the main surface of the substrate, so as to sandwich the applied resist raw material liquid,
Placing a PMMA film on the main surface of the supporting substrate; polymerizing MMA in the resist raw material liquid;
Adhering an MMA film to the supporting substrate.
【００１２】ほぼ均一な厚さを有するレジスト膜を形成
することができる。本発明の他の観点によると、導電材
料が表出した主表面を有する支持基板を準備する工程
と、液状のＭＭＡにＰＭＭＡを溶解させ、重合開始剤を
添加したレジスト原料液を前記支持基板の主表面上に塗
布する工程と、塗布された前記レジスト原料液を挟み込
むように、前記支持基板の主表面の上にＰＭＭＡ膜を載
置する工程と、前記レジスト原料液中のＭＭＡを重合さ
せ、前記ＰＭＭＡ膜を前記支持基板に接着し、前記ＰＭ
ＭＡ膜と前記レジスト原料液が硬化した層からなるレジ
スト膜を形成する工程と、前記レジスト膜を部分的に露
光し、現像する工程とを含む超小型構造体の作製方法が
提供される。A resist film having a substantially uniform thickness can be formed. According to another aspect of the present invention, a step of preparing a support substrate having a main surface on which a conductive material is exposed, and dissolving PMMA in liquid MMA and adding a polymerization initiator to a resist raw material liquid, Applying a PMMA film on the main surface of the support substrate so as to sandwich the applied resist material liquid, and polymerizing MMA in the resist material liquid, Adhering the PMMA film to the support substrate,
There is provided a method for manufacturing a microminiature structure including a step of forming a resist film composed of an MA film and a layer obtained by curing the resist raw material liquid, and a step of partially exposing and developing the resist film.
【００１３】レジスト膜からなる超小型構造体が得られ
る。現像により除去された凹部に電鋳により金属部材を
埋め込み、レジスト膜を除去すると、金属からなる超小
型構造体を得ることができる。An ultra-small structure made of a resist film is obtained. When a metal member is buried by electroforming in the concave portion removed by the development and the resist film is removed, a micro structure made of metal can be obtained.
【００１４】[0014]
【発明の実施の形態】図１を参照して、本発明の実施例
によるレジスト膜を作製方法について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming a resist film according to an embodiment of the present invention will be described with reference to FIG.
【００１５】図１（Ａ）に示すように、シリコン基板１
の表面上に、例えばＴｉからなる導電膜２を形成する。
液状のＭＭＡにＰＭＭＡを溶解させ、さらに重合開始剤
と硬化剤とを添加したレジスト原料液３を、導電膜２の
表面上に塗布する。図３に示す従来例に比べて、レジス
ト原料液３の厚さが薄くてもよいため、基板表面上にス
ペーサを配置する必要がない。また、スピンコートによ
ることなく、コータを用いて塗布することが可能なた
め、表面にある程度の凹凸があっても、安定して均一に
塗布することができる。As shown in FIG. 1A, a silicon substrate 1
The conductive film 2 made of, for example, Ti is formed on the surface of the substrate.
A resist raw material liquid 3 obtained by dissolving PMMA in liquid MMA and further adding a polymerization initiator and a curing agent is applied on the surface of the conductive film 2. Since the thickness of the resist raw material liquid 3 may be smaller than that of the conventional example shown in FIG. 3, it is not necessary to arrange a spacer on the substrate surface. In addition, since the coating can be performed using a coater without using spin coating, the coating can be performed stably and uniformly even if the surface has some irregularities.
【００１６】レジスト原料液３の上に、所望の厚さのＰ
ＭＭＡ膜４を載置する。例えば、厚さ２００〜２０００
μｍのＰＭＭＡ膜を、日東樹脂工業（商品名 ＣＬＡＲ
ＥＸ板）から入手することができる。On the resist raw material liquid 3, a P having a desired thickness is formed.
The MMA film 4 is placed. For example, thickness 200-2000
μm PMMA film is manufactured by Nitto Jushi Kogyo Co., Ltd.
EX board).
【００１７】レジスト原料液３が均一に広がるまで、加
圧部材５を用いてＰＭＭＡ膜４をシリコン基板１に押し
つける。加圧を停止した状態で、室温（２０℃以上）に
て、レジスト原料液３に含まれるＭＭＡを重合させる。
ＭＭＡの重合時に加圧を停止するのは、亀裂の発生を防
ぐためである。The PMMA film 4 is pressed against the silicon substrate 1 using the pressing member 5 until the resist raw material liquid 3 spreads uniformly. With the pressurization stopped, MMA contained in the resist raw material liquid 3 is polymerized at room temperature (20 ° C. or higher).
The reason why the pressurization is stopped during the polymerization of the MMA is to prevent the occurrence of cracks.
【００１８】図１（Ｂ）に示すように、レジスト原料液
３の重合反応により形成されたＰＭＭＡ膜３ａを介して
ＰＭＭＡ膜４が導電膜２に接着される。レジスト原料液
３の組成を適当に選択しておくと、ＰＭＭＡ膜４とＰＭ
ＭＡ膜３ａとの間の境界は、ほとんど識別不能になり、
厚さ方向に関して組成のほぼ一様な厚いＰＭＭＡ膜を得
ることができる。As shown in FIG. 1B, a PMMA film 4 is bonded to the conductive film 2 via a PMMA film 3a formed by a polymerization reaction of the resist raw material liquid 3. If the composition of the resist raw material liquid 3 is appropriately selected, the PMMA film 4 and the PM
The boundary between the MA membrane 3a becomes almost indistinguishable,
A thick PMMA film having a substantially uniform composition in the thickness direction can be obtained.
【００１９】レジスト原料液３のＰＭＭＡ濃度を１〜４
重量％、ＭＭＡ濃度を９６重量％以上とすることが好ま
しい。硬化剤として、例えば過酸化ベンゾイル（ＢＰ
Ｏ）、重合開始剤として、例えばジメチルアニリンを使
用することができる。レジスト原料液に対して過酸化ベ
ンゾイルの濃度は０．０９重量％以下、ジメチルアニリ
ンの濃度も０．０９重量％以下とすることが好ましい。
また、レジスト原料液３に溶解しているＰＭＭＡの重量
平均分子量は、１．４×１０6 以上とすることが好まし
い。The PMMA concentration of the resist raw material liquid 3 is 1 to 4
% By weight and the MMA concentration is preferably 96% by weight or more. As a curing agent, for example, benzoyl peroxide (BP
O) As the polymerization initiator, for example, dimethylaniline can be used. Preferably, the concentration of benzoyl peroxide is 0.09% by weight or less and the concentration of dimethylaniline is 0.09% by weight or less based on the resist raw material liquid.
Further, the weight average molecular weight of PMMA dissolved in the resist raw material liquid 3 is preferably set to 1.4 × 10 6 or more.
【００２０】また、ＰＭＭＡ膜３ａの厚さが１〜２０μ
ｍとなるように、圧力を加えることが好ましい。なお、
ＰＭＭＡ膜３ａとＰＭＭＡ膜４との境界を識別すること
は困難であるが、ＰＭＭＡ膜３ａと４との合計の厚さか
ら、当初のＰＭＭＡ膜４の厚さを減ずることによりＰＭ
ＭＡ膜３ａの厚さを求めることができる。The PMMA film 3a has a thickness of 1 to 20 μm.
It is preferable to apply pressure so as to obtain m. In addition,
Although it is difficult to identify the boundary between the PMMA films 3a and 4, the PMMA film 4 is reduced by reducing the initial thickness of the PMMA film 4 from the total thickness of the PMMA films 3a and 4.
The thickness of the MA film 3a can be determined.
【００２１】上記実施例では、シリコン基板の表面上に
Ｔｉ膜を形成した基板を用いたが、その他の基板を用い
てもよい。また、レジスト膜を露光、現像した後、電鋳
等の工程を行わない場合には、必ずしも表面に導電性材
料が表出していなくてもよい。In the above embodiment, a substrate in which a Ti film is formed on the surface of a silicon substrate is used, but another substrate may be used. In addition, when a process such as electroforming is not performed after exposing and developing the resist film, the conductive material does not necessarily have to be exposed on the surface.
【００２２】次に、上記実施例による方法で作製した厚
いＰＭＭＡ膜を用いた超小型構造体の作製方法について
説明する。Next, a method of manufacturing a micro structure using a thick PMMA film manufactured by the method according to the above embodiment will be described.
【００２３】図２（Ａ）に示すように、シリコン基板３
０の表面上に例えばＴｉからなる厚さ０．３μｍの導電
膜３１を、スパッタリングにより形成する。導電膜３１
の表面上に、図１で説明した実施例による方法で、ＰＭ
ＭＡからなる厚さ２００μｍのレジスト膜３２を形成す
る。As shown in FIG. 2A, the silicon substrate 3
A 0.3 μm thick conductive film 31 made of, for example, Ti is formed on the surface of the “0” by sputtering. Conductive film 31
On the surface of the PM by the method according to the embodiment described in FIG.
A resist film 32 of MA having a thickness of 200 μm is formed.
【００２４】レジスト膜３２の表面上に一定の間隔を隔
ててマスク部材３３を配置する。マスク部材３３とし
て、例えば幅２０μｍ、厚さ２０μｍの銅製のメッシュ
を用いる。マスク部材３３を介してレジスト膜３２をサ
イクロトロン放射（ＳＲ）光３４で露光する。A mask member 33 is arranged on the surface of the resist film 32 at a predetermined interval. As the mask member 33, for example, a copper mesh having a width of 20 μm and a thickness of 20 μm is used. The resist film 32 is exposed to cyclotron radiation (SR) light 34 via the mask member 33.
【００２５】図２（Ｂ）に示すように、レジスト膜３２
を現像する。ＳＲ光に露光された領域に凹部３５が形成
される。As shown in FIG. 2B, the resist film 32
Develop. A concave portion 35 is formed in a region exposed to the SR light.
【００２６】ＳＲ光発生装置の初期ビーム電流３６０ｍ
Ａの条件下で、露光面積１．５ｍｍ×３０ｍｍの領域に
約１０分間の露光を行った後、現像液として日本応化工
業株式会社製のＯＥＢＲ−１０００（９０％のイソアミ
ルアセテートと１０％のエチルアセテートの混合液）を
用い、室温で約５分間の現像を行ったところ、高さ２０
０μｍ、アスペクト比１０のレジストパターンが得られ
た。ＳＲ光の計算ドーズ量は、３Ａｍｉｎであった。The initial beam current of the SR light generator is 360 m
Under the conditions of A, an exposure area of 1.5 mm × 30 mm was exposed for about 10 minutes, and then OEBR-1000 (90% isoamyl acetate and 10% ethyl acetate) manufactured by Nippon Ohka Kogyo Co., Ltd. was used as a developer. (Mixture of acetate) at room temperature for about 5 minutes.
A resist pattern having a thickness of 0 μm and an aspect ratio of 10 was obtained. The calculated dose of the SR light was 3 Amin.
【００２７】図２（Ｃ）に示すように、溝３５の底面に
露出した導電膜３１の表面上に、電鋳により、例えばＣ
ｕ、Ｎｉ、Ｐｔ等を堆積する。溝３５内がＣｕ、Ｎｉ、
Ｐｔ等からなる金属部材３６で埋め込まれる。As shown in FIG. 2C, the surface of the conductive film 31 exposed on the bottom surface of the groove 35 is formed by electroforming on the surface of the conductive film 31, for example.
u, Ni, Pt, etc. are deposited. Cu, Ni,
It is embedded with a metal member 36 made of Pt or the like.
【００２８】図２（Ｄ）に示すように、残ったレジスト
膜３２を除去する。導電膜３１の表面上に金属部材３６
が残る。このようにして、金属材料からなる超小型の構
造体を作製することができる。As shown in FIG. 2D, the remaining resist film 32 is removed. The metal member 36 is formed on the surface of the conductive film 31.
Remains. In this manner, an ultra-small structure made of a metal material can be manufactured.
【００２９】また、図２（Ａ）に示すレジスト膜３２の
厚さを１０００μｍとし、マスク部材３３として幅１０
０μｍ、厚さ１００μｍの銅製のメッシュを用いたとこ
ろ、図２（Ｂ）において、高さ１０００μｍ、アスペク
ト比１０のレジストパターンを得ることができた。な
お、この場合の露光は、スキャニングしながら約１６０
分間行い、計算ドーズ量は３２Ａｍｉｎであった。ま
た、現像は、ＧＧ現像液（６０体積％の２−（２−ブト
キシ−エトキシ）エタノール、２０体積％のテトラハイ
ドロ−１，４−オキサジン、５体積％の２−アミノエタ
ノール−１、及び１５体積％の水）を用い、３７℃で６
０分間行った。なお、現像液がレジストパターンの底ま
で十分に行き渡るようにマグネットスターラにより攪拌
しながら現像した。Further, the thickness of the resist film 32 shown in FIG.
When a copper mesh having a thickness of 0 μm and a thickness of 100 μm was used, a resist pattern having a height of 1000 μm and an aspect ratio of 10 could be obtained in FIG. 2B. Exposure in this case is about 160 while scanning.
Minutes and the calculated dose was 32 Amin. The development was carried out using a GG developer (60% by volume of 2- (2-butoxy-ethoxy) ethanol, 20% by volume of tetrahydro-1,4-oxazine, 5% by volume of 2-aminoethanol-1, and 15% by volume. 6% at 37 ° C.
Performed for 0 minutes. The development was performed while stirring with a magnetic stirrer so that the developing solution could sufficiently reach the bottom of the resist pattern.
【００３０】厚さ１０００μｍのレジスト膜を用いる
と、図２（Ｄ）において高さ１０００μｍ程度の微細構
造体３６を作製することができる。When a resist film having a thickness of 1000 μm is used, a fine structure 36 having a height of about 1000 μm in FIG. 2D can be manufactured.
【００３１】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。例えば、種
々の変更、改良、組み合わせ等が可能なことは当業者に
自明であろう。The present invention has been described in connection with the preferred embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.
【００３２】[0032]
【発明の効果】以上説明したように、本発明によれば、
液状のＭＭＡにＰＭＭＡを溶解させ、重合開始剤を添加
した混合溶液を用い、ＰＭＭＡ膜を基板に接着すること
により、厚さのほぼ均一な、かつ厚さ方向に関する組成
のほぼ一様なレジスト膜を形成することができる。この
レジスト膜をＬＩＧＡプロセスに適用して超小型構造体
を作製することができる。As described above, according to the present invention,
A PMMA film is dissolved in a liquid MMA and a PMMA film is adhered to a substrate using a mixed solution to which a polymerization initiator has been added, whereby a resist film having a substantially uniform thickness and a composition having a substantially uniform composition in the thickness direction is obtained. Can be formed. By applying this resist film to the LIGA process, a microminiature structure can be manufactured.
【図１】本発明の実施例によるレジスト膜の形成方法を
説明するためのレジスト膜及び基板の断面図である。FIG. 1 is a cross-sectional view of a resist film and a substrate for explaining a method of forming a resist film according to an embodiment of the present invention.
【図２】本発明の実施例による超小型微細構造体の作製
方法を説明するためのレジスト膜、基板及び超小型構造
体の断面図である。FIG. 2 is a cross-sectional view of a resist film, a substrate, and a microstructure for describing a method for manufacturing a microstructure according to an embodiment of the present invention.
【図３】従来例によるレジスト膜の形成方法を説明する
ための、基板の断面図である。FIG. 3 is a cross-sectional view of a substrate for explaining a method of forming a resist film according to a conventional example.
【図４】他の従来例によるレジスト膜の形成方法を説明
するための、基板の断面図である。FIG. 4 is a cross-sectional view of a substrate for explaining a method of forming a resist film according to another conventional example.
１ シリコン基板 ２ 導電膜 ３ レジスト原料液 ３ａ、４ ＰＭＭＡ膜 ５ 加圧部材 ３０ シリコン基板 ３１ 導電膜 ３２ レジスト膜 ３３ マスク部材 ３４ ＳＲ光 ３５ 凹部 ３６ 金属部材 ５０、６０ シリコン基板 ５１、６１ 導電膜 ５２ スペーサ ５３ レジスト原料液 ５４、６５ 加圧部材 ６２、６４ ＰＭＭＡ膜 ６３ ＭＭＡ液 Reference Signs List 1 silicon substrate 2 conductive film 3 resist raw material liquid 3a, 4 PMMA film 5 pressure member 30 silicon substrate 31 conductive film 32 resist film 33 mask member 34 SR light 35 concave portion 36 metal member 50, 60 silicon substrate 51, 61 conductive film 52 Spacer 53 Resist raw material liquid 54, 65 Pressure member 62, 64 PMMA film 63 MMA liquid
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｇ０３Ｆ 7/30 Ｇ０３Ｆ 7/30 Ｈ０１Ｌ 21/027 Ｈ０１Ｌ 21/30 ５０２Ｒ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI G03F 7/30 G03F 7/30 H01L 21/027 H01L 21/30 502R
Claims (7)
と、 液状のＭＭＡにＰＭＭＡを溶解させ、重合開始剤を添加
したレジスト原料液を前記支持基板の主表面上に塗布す
る工程と、 塗布された前記レジスト原料液を挟み込むように、前記
支持基板の主表面の上にＰＭＭＡ膜を載置する工程と、 前記レジスト原料液中のＭＭＡを重合させ、前記ＰＭＭ
Ａ膜を前記支持基板に接着する工程とを含むレジスト膜
の形成方法。A step of preparing a supporting substrate having a main surface; a step of dissolving PMMA in a liquid MMA and applying a resist raw material liquid to which a polymerization initiator is added on the main surface of the supporting substrate; Placing a PMMA film on the main surface of the support substrate so as to sandwich the resist material liquid thus obtained, and polymerizing MMA in the resist material liquid,
Adhering the A film to the support substrate.
４重量％以下である請求項１に記載のレジスト膜の形成
方法。2. The method for forming a resist film according to claim 1, wherein the concentration of PMMA in the resist raw material liquid is 4% by weight or less.
平均分子量が１．４×１０6 以上である請求項１または
２に記載のレジスト膜の形成方法。3. The method for forming a resist film according to claim 1, wherein the weight average molecular weight of PMMA in the resist raw material liquid is 1.4 × 10 6 or more.
て、前記レジスト原料液の重合反応により形成されるレ
ジスト層の厚さが２０μｍ以下になるように、前記ＰＭ
ＭＡ膜を前記支持基板に押しつける請求項１〜３のいず
れかに記載のレジスト膜の形成方法。4. The step of bonding the PMMA film, wherein the PM layer is formed so that the thickness of a resist layer formed by a polymerization reaction of the resist raw material liquid is 20 μm or less.
The method for forming a resist film according to claim 1, wherein an MA film is pressed against the support substrate.
あり、前記レジスト原料液に対する濃度が、０．０９重
量％以下である請求項１〜４のいずれかに記載のレジス
ト膜の形成方法。5. The method for forming a resist film according to claim 1, wherein the polymerization initiator is dimethylaniline, and the concentration with respect to the resist raw material liquid is 0.09% by weight or less.
酸化ベンゾイルが濃度０．０９重量％以下含まれている
請求項１〜５のいずれかに記載のレジスト膜の形成方
法。6. The method for forming a resist film according to claim 1, wherein said resist raw material liquid contains benzoyl peroxide as a curing agent at a concentration of 0.09% by weight or less.
基板を準備する工程と、 液状のＭＭＡにＰＭＭＡを溶解させ、重合開始剤を添加
したレジスト原料液を前記支持基板の主表面上に塗布す
る工程と、 塗布された前記レジスト原料液を挟み込むように、前記
支持基板の主表面の上にＰＭＭＡ膜を載置する工程と、 前記レジスト原料液中のＭＭＡを重合させ、前記ＰＭＭ
Ａ膜を前記支持基板に接着し、前記ＰＭＭＡ膜と前記レ
ジスト原料液が硬化した層からなるレジスト膜を形成す
る工程と、 前記レジスト膜を部分的に露光し、現像する工程とを含
む超小型構造体の作製方法。7. A step of preparing a support substrate having a main surface on which a conductive material is exposed; dissolving PMMA in liquid MMA, and adding a polymerization initiator-added resist raw material solution onto the main surface of the support substrate. Applying a PMMA film on the main surface of the supporting substrate so as to sandwich the applied resist raw material liquid; polymerizing MMA in the resist raw material liquid;
An ultra-compact method comprising: adhering the A film to the support substrate to form a resist film composed of a layer obtained by curing the PMMA film and the resist raw material liquid; and partially exposing and developing the resist film. Method for manufacturing a structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21782397A JP3376253B2 (en) | 1997-08-12 | 1997-08-12 | Method of forming resist film and method of manufacturing microstructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21782397A JP3376253B2 (en) | 1997-08-12 | 1997-08-12 | Method of forming resist film and method of manufacturing microstructure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1165111A true JPH1165111A (en) | 1999-03-05 |
| JP3376253B2 JP3376253B2 (en) | 2003-02-10 |
Family
ID=16710314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21782397A Expired - Fee Related JP3376253B2 (en) | 1997-08-12 | 1997-08-12 | Method of forming resist film and method of manufacturing microstructure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3376253B2 (en) |
-
1997
- 1997-08-12 JP JP21782397A patent/JP3376253B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3376253B2 (en) | 2003-02-10 |
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