JPS62168134A - Formation of graft-polymerized film pattern - Google Patents
Formation of graft-polymerized film patternInfo
- Publication number
- JPS62168134A JPS62168134A JP60282578A JP28257885A JPS62168134A JP S62168134 A JPS62168134 A JP S62168134A JP 60282578 A JP60282578 A JP 60282578A JP 28257885 A JP28257885 A JP 28257885A JP S62168134 A JPS62168134 A JP S62168134A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- graft
- monomer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000178 monomer Substances 0.000 claims abstract description 31
- 239000002952 polymeric resin Substances 0.000 claims abstract description 15
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229920000578 graft copolymer Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 238000010559 graft polymerization reaction Methods 0.000 claims description 10
- 238000012644 addition polymerization Methods 0.000 claims description 7
- 108010010803 Gelatin Proteins 0.000 claims description 6
- 229920000159 gelatin Polymers 0.000 claims description 6
- 239000008273 gelatin Substances 0.000 claims description 6
- 235000019322 gelatine Nutrition 0.000 claims description 6
- 235000011852 gelatine desserts Nutrition 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 65
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000000379 polymerizing effect Effects 0.000 abstract 1
- 230000000284 resting effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 230000000977 initiatory effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012985 polymerization agent Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高分子材料の固相グラフト重合法を利用し、
被加工基板上に高精度微細加工用のレジストパターンを
形成するためのグラフト重合膜パターン形成方法に関す
るものである。[Detailed description of the invention] [Industrial application field] The present invention utilizes a solid phase graft polymerization method of polymeric materials,
The present invention relates to a graft polymer film pattern forming method for forming a resist pattern for high-precision microfabrication on a substrate to be processed.
第２図は例えば特開昭５８−８６７２６号公報に示され
た従来の気相グラフト法を用いたパターン形成方法を示
す工ａ図である。図において、１はシリコン等の基板、
２は基材膜で、ここで基材とは高エネルギー線照射によ
り付加重合開始可能な活性点を生成するものである。４
はモノマーガス、５は電子線、Ｘ線又は遠紫外線等の高
エネルギー線、６はグラフト重合膜である。また、第２
図（ａ）は基板１上に基材１１１２を形成する工程、第
２図（ｂ）は上記基材膜２上の所望のパターン領域に高
エネルギー線５を照射する工程、第２図（Ｃ）は照射さ
れた上記基材膜２をモノマーガス４雰囲気にさらしてグ
ラフト重合膜６を形成する工程、第２図（ｄ）は上記モ
ノマーガス４を除去してグラフト重合膜６のパターンを
形成する工程を示す。FIG. 2 is a diagram showing a pattern forming method using the conventional vapor phase grafting method disclosed in, for example, Japanese Patent Laid-Open No. 58-86726. In the figure, 1 is a substrate such as silicon;
Reference numeral 2 denotes a base film, where the base material is one that generates active points capable of initiating addition polymerization by irradiation with high-energy rays. 4
5 is a monomer gas, 5 is a high energy beam such as an electron beam, an X-ray, or a far ultraviolet ray, and 6 is a graft polymer film. Also, the second
FIG. 2(a) shows a step of forming a base material 1112 on the substrate 1, FIG. ) is a step in which the irradiated base film 2 is exposed to an atmosphere of monomer gas 4 to form a graft polymer film 6, and FIG. 2(d) is a step in which the monomer gas 4 is removed to form a pattern of the graft polymer film 6. The process of doing this is shown below.
次にパターンの形成方法を順に説明する。まず第２図（
ａ）に示すように、表面熱酸化した基板１上に、所定の
基材を塗布して基材膜２を形成する。Next, a pattern forming method will be explained in order. First, Figure 2 (
As shown in a), a predetermined base material is applied onto a substrate 1 whose surface has been thermally oxidized to form a base film 2.
次に第２図（ｂ）に示すように、上記基材膜２上の所望
のパターン領域に高エネルギー線５を照射する。Next, as shown in FIG. 2(b), a desired pattern area on the base film 2 is irradiated with high energy rays 5.
この工程では、上記基材膜２の上記高エネルギー線５照
射部分に付加重合開始可能な活性点が生成される０次に
第２図（Ｃ１に示すように、照射された上記基材膜２を
所定の七ツマーガス４雰囲気にさらしてパターン照射部
を選択的にグラフト重合させ、パターン形状のグラフト
重合膜６を形成する。In this step, as shown in FIG. is exposed to a predetermined 7-mer gas 4 atmosphere to selectively graft-polymerize the pattern irradiated portions, thereby forming a pattern-shaped graft-polymerized film 6.
このとき、グラフト重合は上記高エネルギー線５に照射
され、付加重合開始可能な活性点の生成された部分に生
じる。このような工程を経て、第２図＋ｄ）に示すよう
に、上記モノマーガス４雰囲気を除去することにより所
望のグラフト重合膜６のパターンが得られる。At this time, graft polymerization occurs at a portion where active sites capable of initiating addition polymerization are generated by irradiation with the high-energy rays 5 . Through these steps, the atmosphere of the monomer gas 4 is removed to obtain a desired pattern of the graft polymerized film 6, as shown in FIG. 2+d).
そして、このようにして得られたグラフト重合１ｍ！６
のパターンをマスクとして用い、上記基材膜２にパター
ンを形成する。And, the graft polymerization obtained in this way was 1 m! 6
A pattern is formed on the base film 2 using the pattern as a mask.
従来の気相グラフト法では、基材膜に高エネルギー線を
照射した後、減圧にして七ツマーガスを導入しなければ
ならず時間がかかるという問題点があった。またモノマ
ーをガス化して導入するために設備が必要であり、さら
に、ガス化しにくい高分子量のモノマーは利用しにくい
という問題点があった。The conventional gas phase grafting method has the problem that after irradiating the base film with high-energy rays, the pressure must be reduced and a 7-mer gas must be introduced, which takes time. In addition, equipment is required to gasify and introduce the monomer, and there is also the problem that high molecular weight monomers that are difficult to gasify are difficult to use.
この発明は上記のような問題点を解消するためになされ
たもので、グラフト重合に要する時間を短縮できるとと
もに、付属設備を必要とせず、さらにガス化しにくい七
ツマ−をも重合化合物として利用することのできるグラ
フト重合膜パターン形成方法を提供することを目的とす
る。This invention was made in order to solve the above-mentioned problems, and not only can the time required for graft polymerization be shortened, but additional equipment is not required, and in addition, 7mer, which is difficult to gasify, can be used as a polymerization compound. The purpose of the present invention is to provide a method for forming a graft polymerized film pattern.
この発明に係るグラフト重合膜パターン形成方法は、重
合剤であるモノマーをポリマー樹脂膜に含有させて、こ
れを付加重合開始可能な活性点を生成する基材膜上に薄
膜として形成し、グラフト重合を行うようにしたもので
ある。The method for forming a graft polymer film pattern according to the present invention involves incorporating a monomer as a polymerization agent into a polymer resin film, forming this as a thin film on a base film that generates active sites capable of initiating addition polymerization, and carrying out graft polymerization. It was designed to do this.
この発明においては、モノマーを含むポリマー樹脂膜を
付加重合開始可能な活性点を生成する基材膜上に形成す
るので、モノマーは基材膜上に固゛定された状態でグラ
フト重合することとなる。In this invention, a polymer resin film containing a monomer is formed on a base film that generates active sites capable of initiating addition polymerization, so that graft polymerization does not occur while the monomer is fixed on the base film. Become.
以下、この発明の一実施例を図について説明する。第１
図は本発明の一実施例によるグラフト重合膜パターン形
成方法の工程を示す。図において、１はシリコン等の基
板、２は高エネルギー線照射により付加重合開始可能な
活性点を生成する基材からなる基材膜、４ａはモノマー
、３はモノマー４ａを含むポリマー樹脂膜、５ａは例え
ばＰｄＬα線である高エネルギー線、６はグラフト重合
膜である。また、第１図（ａ）は基板１上に基材膜２を
形成し、その上にモノマー４ａを含むポリマー樹脂膜３
を形成する工程、第１図（ｂ）は上記基材ＰＡ２上の所
望のパターン領域に高エネルギー線５ａを照射する工程
、第１図（Ｑ）はグラフト重合膜６を形成する工程、第
１図＋ｄ）は未反応のモノマー４ａを含むポリマー樹脂
Ｊｌｉｉ３を除去してグラフト重合膜６のパターンを形
成する工程を示す。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows the steps of a method for forming a graft polymer film pattern according to an embodiment of the present invention. In the figure, 1 is a substrate such as silicon, 2 is a base film made of a base material that generates active points that can initiate addition polymerization by irradiation with high energy rays, 4a is a monomer, 3 is a polymer resin film containing monomer 4a, 5a 6 is a high-energy ray, such as a PdLα ray, and 6 is a graft polymer film. In addition, FIG. 1(a) shows a base film 2 formed on a substrate 1, and a polymer resin film 3 containing a monomer 4a thereon.
FIG. 1(b) is a step of irradiating a desired pattern area on the base material PA2 with high-energy rays 5a, and FIG. 1(Q) is a step of forming a graft polymer film 6. Figure +d) shows the process of removing the polymer resin Jlii3 containing the unreacted monomer 4a to form a pattern of the graft polymer film 6.
次に本実施例の形成方法を工程順に説明する。Next, the forming method of this embodiment will be explained in order of steps.
まず第１図（ａ）に示すように、基板１上に基材を塗布
して基材膜２を形成し、この上にモノマー４ａを含むポ
リマー樹脂膜３を形成する。次に第１図世）に示すよう
に、上記基材膜２上の所望のパターン領域に高エネルギ
ー線５ａを照射する。この工程では、上記基材膜２の上
記高エネルギー線５ａ照射部分に付加重合開始可能な活
性点が生成され、同時に活性点近傍の上記モノマー４ａ
がグラフト重合を開始する。さらに第１図（ｅ）に示す
ように、グラフト重合を十分行なわせるために、放置す
る。First, as shown in FIG. 1(a), a base material is applied onto a substrate 1 to form a base film 2, and a polymer resin film 3 containing a monomer 4a is formed thereon. Next, as shown in Figure 1), a desired pattern area on the base film 2 is irradiated with high energy beams 5a. In this step, an active point capable of initiating addition polymerization is generated in the portion of the base film 2 irradiated with the high-energy ray 5a, and at the same time, the monomer 4a near the active point is generated.
starts graft polymerization. Further, as shown in FIG. 1(e), the mixture is left to stand for sufficient graft polymerization.
最後に、第１図（ｄ）に示すように、適当な溶剤で、未
反応のモノマー４ａを含むポリマー樹脂膜３を除去して
グラフト重合膜６のパターンを得る。Finally, as shown in FIG. 1(d), the polymer resin film 3 containing the unreacted monomer 4a is removed using a suitable solvent to obtain a pattern of the graft polymer film 6.
そしてその後、このようにして得られた上記グラフト重
合膜６のパターンをマスクとして用い、プラズマアッシ
ングあるいは適当な現像液により上記基材Ｉｔ！Ｊ２に
パターンを形成する。Thereafter, using the pattern of the graft polymerized film 6 thus obtained as a mask, plasma ashing or an appropriate developer is applied to the base material It! Form a pattern on J2.
次に本発明の具体的な実施例について説明する。Next, specific examples of the present invention will be described.
実施例１
シリコンウェハ上に、ＰＭＭＡを１．０μｍの膜厚にス
ピンコードし、その上に、ゼラチンとアクリル酸を含む
水溶液をスピンコードして０．７μｍの均一な膜を形成
した。膜中の酸素と水を真空ベーク除去した。次に、Ｂ
Ｎ（窒化ボロン）とポリイミド膜からなる５μｍ厚の複
合基板上に０．７μｍのＡｕ吸収パターンを形成したＸ
線マスクを用いて、このウェハ上にＰｄＬα線（４，３
７人）をＨｅ中で２〜１０分間照射した。照射後、数分
間放置した後、純水により未反応のアクリル酸とゼラチ
ンを除去し、乾燥し、０．２〜０．４μｍのグラフト重
合膜のパターンを形成した。さらにトルエンで現像する
とグラフト重合膜のパターン部分のＰＭＭＡは残り、レ
ジストパターンが得られた。感度はＰＭＭＡのみによる
パターン形成より約２ケタ向上した。グラフト重合膜厚
はモノマーとゼラチン樹脂の混合比に大きく依存するが
、モノマー量が重量パーセントで６０％以上になると膜
厚増加の飽和現象がみられた。Example 1 PMMA was spin-coded to a thickness of 1.0 μm on a silicon wafer, and an aqueous solution containing gelatin and acrylic acid was spin-coded thereon to form a uniform film of 0.7 μm. Oxygen and water in the film were removed by vacuum baking. Next, B
X with a 0.7 μm Au absorption pattern formed on a 5 μm thick composite substrate made of N (boron nitride) and polyimide film.
PdLα radiation (4,3
7) were irradiated in He for 2 to 10 minutes. After irradiation, it was left to stand for several minutes, and then unreacted acrylic acid and gelatin were removed with pure water and dried to form a graft polymer film pattern of 0.2 to 0.4 μm. Further development with toluene left the PMMA in the patterned portion of the graft polymerized film, and a resist pattern was obtained. The sensitivity was improved by about two orders of magnitude compared to pattern formation using only PMMA. The graft polymer film thickness largely depends on the mixing ratio of monomer and gelatin resin, but when the monomer amount exceeds 60% by weight, a saturation phenomenon of film thickness increase was observed.
実施例２
実施例１と同じ方法で、Ｐ Ｍ Ｍ Ａ １１１１を基
材膜として用い、該基材膜上にビニルフェノール（ＣＨ
２−ＣＨ→３ｏ Ｈ）モノマーとゼラチン樹脂とから成
る膜を形成した。実施例１と同様にＰｄＬα線により露
光し、数分間放置した後、未反応モノマーとゼラチンを
水洗いして除去し、乾燥して０．３μｍのグラフト重合
膜のパターンを形成した。Example 2 In the same manner as in Example 1, PMMA 1111 was used as a base film, and vinylphenol (CH
A film consisting of a 2-CH→3o H) monomer and gelatin resin was formed. It was exposed to PdLα radiation in the same manner as in Example 1, left for several minutes, and then washed with water to remove unreacted monomers and gelatin, and dried to form a 0.3 μm graft polymer film pattern.
このグラフト重合膜のパターンをマスクとして平行平板
プラズマエツチング装置を用い、０２アツシングにより
レジストパターンを形成した。Using the pattern of this graft polymer film as a mask, a resist pattern was formed by 02 ashing using a parallel plate plasma etching apparatus.
なお、上記では高エネルギー線としてＰｄＬα線を用い
た場合を示したが、他の特性Ｘ性（Ａ１゜Ｃｕ、Ｍｏ、
Ｓ ｉ、ｗ）、プラズマ線又はシンクロ門放射光を用い
てもよい。また、遠紫外線、電子線を用いた場合も同様
の効果が得られるが、七ツマ−を含むポリマー樹脂膜の
膜厚や性質によって感度が大きく異なるので注意を要す
る。In addition, although the above example shows the case where PdLα ray is used as the high energy ray, other characteristic X properties (A1°Cu, Mo,
Si, w), plasma radiation or synchrotron radiation may be used. Further, similar effects can be obtained when far ultraviolet rays or electron beams are used, but care must be taken because the sensitivity varies greatly depending on the thickness and properties of the polymer resin film containing the 7-mer.
以上のように、この発明によれば、基材膜上にグラフト
重合膜を形成する方法において、モノマーを混合したポ
リマー樹脂膜を基材膜上に形成してモノマーを基材膜上
に固定するようにしたので、グラフト重合反応が高エネ
ルギー線照射中にも進行して重合反応に要する時間を短
縮することができ、またガス化しにくい七ツマ−を重合
化合物として利用することができ、モノマーのガス化の
ための設備を必要とせず安価にできるという効果がある
。As described above, according to the present invention, in the method of forming a graft polymer film on a base film, a polymer resin film mixed with monomers is formed on the base film, and the monomers are fixed on the base film. As a result, the graft polymerization reaction can proceed even during high-energy ray irradiation, shortening the time required for the polymerization reaction, and it is also possible to use 7-mer, which is difficult to gasify, as a polymerization compound, and to reduce the amount of monomer. It has the advantage of being inexpensive as it does not require gasification equipment.
第１図はこの発明の一実施例によるグラフト重合膜パタ
ーン形成方法を示す工程別断面図、第２図は従来のグラ
フト重合膜パターン形成方法を示す工程別断面図である
。
図において、１は基板、２は基材膜、３はポリマー樹脂
膜、４ａはモノマー、５ａは高エネルギー線、６はグラ
フト重合膜である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a step-by-step sectional view showing a graft polymer film pattern forming method according to an embodiment of the present invention, and FIG. 2 is a step-by-step sectional view showing a conventional graft polymer film pattern forming method. In the figure, 1 is a substrate, 2 is a base film, 3 is a polymer resin film, 4a is a monomer, 5a is a high energy beam, and 6 is a graft polymer film. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (3)
性点を生成する基材からなる基材膜を基板上に形成する
工程と、 上記基材膜上に、上記基材と容易に付加重合するモノマ
ーを含むポリマー樹脂膜を形成する工程と、 上記基材膜上の所望のパターン領域に高エネルギー線を
照射し、グラフト重合膜を形成する工程と、 未反応のモノマーを含むポリマー樹脂膜を除去してグラ
フト重合膜のパターンを形成する工程とを含むことを特
徴とするグラフト重合膜パターン形成方法。(1) Forming on a substrate a base film made of a base material that generates active points that can initiate addition polymerization by irradiation with high-energy rays; A step of forming a polymer resin film containing monomers, A step of irradiating a desired pattern area on the base film with high energy rays to form a graft polymerization film, and Removing the polymer resin film containing unreacted monomers. A method for forming a pattern of a graft polymer film, the method comprising: forming a pattern of a graft polymer film.
ト）、上記モノマーはアクリル酸又はビニルフェノール
、上記ポリマー樹脂はゼラチン、上記高エネルギー線は
ＰｄＬα線であることを特徴とする特許請求の範囲第１
項記載のグラフト重合膜パターン形成方法。(2) Claim 1, wherein the base material is PMMA (polymethyl methacrylate), the monomer is acrylic acid or vinylphenol, the polymer resin is gelatin, and the high-energy ray is PdLα ray.
The method for forming a graft polymer film pattern described in Section 1.
、Ｗの特性Ｘ線、プラズマ線、シンクロトン放射光、遠
紫外線又は電子線であることを特徴とする特許請求の範
囲第１項記載のグラフト重合膜パターン形成方法。(3) The high energy rays mentioned above include Al, Cu, Mo, and Si.
, W characteristic X-rays, plasma rays, synchroton radiation, deep ultraviolet rays, or electron beams.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282578A JPS62168134A (en) | 1985-12-16 | 1985-12-16 | Formation of graft-polymerized film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282578A JPS62168134A (en) | 1985-12-16 | 1985-12-16 | Formation of graft-polymerized film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62168134A true JPS62168134A (en) | 1987-07-24 |
Family
ID=17654315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60282578A Pending JPS62168134A (en) | 1985-12-16 | 1985-12-16 | Formation of graft-polymerized film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62168134A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431156A (en) * | 1987-07-27 | 1989-02-01 | Hitachi Ltd | Pattern forming method |
| JP2005309405A (en) * | 2004-03-23 | 2005-11-04 | Fuji Photo Film Co Ltd | Pattern forming method |
| JP2007133258A (en) * | 2005-11-11 | 2007-05-31 | Fujifilm Corp | Laminate for printed wiring board and method for producing printed wiring board using the same |
| JPWO2005116763A1 (en) * | 2004-05-31 | 2008-04-03 | 富士フイルム株式会社 | Graft pattern forming method, graft pattern material, lithography method, conductive pattern forming method, conductive pattern, color filter manufacturing method, color filter, and microlens manufacturing method |
-
1985
- 1985-12-16 JP JP60282578A patent/JPS62168134A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431156A (en) * | 1987-07-27 | 1989-02-01 | Hitachi Ltd | Pattern forming method |
| JP2005309405A (en) * | 2004-03-23 | 2005-11-04 | Fuji Photo Film Co Ltd | Pattern forming method |
| JP4502855B2 (en) * | 2004-03-23 | 2010-07-14 | 富士フイルム株式会社 | Pattern formation method |
| JPWO2005116763A1 (en) * | 2004-05-31 | 2008-04-03 | 富士フイルム株式会社 | Graft pattern forming method, graft pattern material, lithography method, conductive pattern forming method, conductive pattern, color filter manufacturing method, color filter, and microlens manufacturing method |
| JP2007133258A (en) * | 2005-11-11 | 2007-05-31 | Fujifilm Corp | Laminate for printed wiring board and method for producing printed wiring board using the same |
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