JPH1164140A - Semiconductor pressure sensor and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which no crack is formed in the glass seat even if positions of the glass seat and metal members are shifted at the time of die bonding and to provide a method for manufacturing the semiconductor pressure sensor. SOLUTION: A semiconductor pressure sensor chip 1 comprising a diaphragm 1a is joined to one side of a glass seat 2 by anodic joining and a metal film 3 is formed on the other side. The metal film 3 in the periphery of a through hole 2a of the glass seat 2 is removed by etching to expose the surface roughened glass seat 2. The glass seat 2 is die-bonded with a metal pipe 4 having a pressure introduction hole 4a by a solder 5 while the metal film 3 being sandwiched between the seat 2 and the metal pipe 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 15 is a schematic sectional view showing a conventional semiconductor pressure sensor. Reference numeral 1 denotes a semiconductor pressure sensor chip, and a diaphragm 1a is formed by forming a substantially central portion of a single-crystal silicon substrate in a thin shape to form a diaphragm 1a.
A strain gage (not shown) whose resistance value changes in accordance with a pressure change is formed on one surface side.

[0003] Reference numeral 2 denotes a glass pedestal, a through hole 2a communicating with the diaphragm 1a is formed substantially at the center, and one surface is joined to the semiconductor pressure sensor chip 1 by anodic bonding or the like, and the other surface is made of metal. The film 3 is formed.

Reference numeral 17 denotes a package, in which a lead 18 is integrally formed, has a concave portion 17a for accommodating the semiconductor pressure sensor chip 1, and a pressure introducing hole 4a is formed substantially at the center of the bottom surface of the concave portion 17a. A metal pipe 4 as a metal member is integrally formed with the package 17. The portion of the metal pipe 4 exposed at the bottom of the concave portion 17a is formed flat for die bonding the semiconductor pressure sensor chip 1 bonded to the glass pedestal 2.

[0005] This semiconductor pressure sensor comprises a package 17.
The glass pedestal 2 to which the semiconductor pressure sensor chip 1 is bonded is soldered onto the metal pipe 4 exposed on the bottom surface of the concave portion 17a.
(Tin, tin-antimony alloy, lead, tin-lead alloy, gold-silicon alloy, tin-silver alloy, etc.). At this time, the pressure introducing hole 4a is arranged so as to communicate with the diaphragm 1a via the through hole 2a. The electrodes (not shown) of the semiconductor pressure sensor chip 1 and the leads 18 are wire-bonded with wires 19, and the surface of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2 is silicon resin 20 or the like. The opening end of the concave portion 17 a of the package 17 is closed by a lid 21.

Another example of a conventional semiconductor pressure sensor will be described. FIG. 16 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example. The same parts as those of the semiconductor pressure sensor shown in FIG. A metal pipe 4 to which a semiconductor pressure sensor chip 1 is die-bonded via a glass pedestal 2 is inserted through a through hole provided substantially at the center of a flat board 22 made of plastic, metal, or the like. Are joined by a board 22 and a borosilicate glass 23 or the like. A pin 24 is inserted through the board 22.
The pin 24 is joined to the board 22 by a borosilicate glass 23 or the like.

The pins 24 and the electrodes (not shown) of the semiconductor pressure sensor chip 1 are wire-bonded by wires 19, and a silicon resin 20 or the like is provided on the side of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2. It has been applied.

The surface of the board 22 to which the semiconductor pressure sensor chip 1 is die-bonded is covered with a cap 25, and the cap 25 and the board 22 are joined by welding or the like.

The metal film 3 shown in FIGS. 15 and 16 includes a Cr / Ni / Au film, a Ti / Ni / Au film, and a Ti / Ni / Au film.
/ Pt / Au film and the like, and the solder 5 is applied to the surface of Au.

[0010]

However, in the semiconductor pressure sensor as described above, as shown in FIG.
When the bonding position shifts during the die bonding between the glass pedestal 2 and the metal pipe 4, a tensile stress 26 is applied to the solder 5, and a crack 27 occurs near the opening end of the glass pedestal 2, and the semiconductor pressure sensor chip 1 Was destroyed.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a glass pedestal that can be displaced during die bonding between a glass pedestal and a metal member. Another object of the present invention is to provide a semiconductor pressure sensor and a method for manufacturing the same, which are free from cracks.

[0012]

According to the first aspect of the present invention,
A semiconductor pressure sensor chip in which a diaphragm is formed by thinning a part of a semiconductor substrate, and a strain gauge is formed on one surface of the diaphragm; and a through hole communicating with the diaphragm, wherein the semiconductor pressure sensor chip A glass pedestal joined to a metal member having a pressure introducing hole communicating with the through-hole, a metal film is provided on a surface side of the glass pedestal that is different from a joining surface with the semiconductor pressure sensor chip, In the semiconductor pressure sensor in which the metal film and the metal member are joined by solder, the solder is not attached in the vicinity of the through hole on the surface of the glass pedestal on which the metal film is provided. It is assumed that.

According to a second aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached to the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. The glass pedestal roughened so as to surround the through hole near the hole is exposed.

According to a third aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached to the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. A Ni layer having an oxide film formed on its surface is exposed near the hole so as to surround the through hole.

According to a fourth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached in the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. A resin having heat resistance is provided on the metal film near the hole so as to surround the through hole.

According to a fifth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder does not adhere to the vicinity of the through-hole, and the through-hole on the surface of the glass pedestal on which the metal film is provided is provided. An aluminum layer is provided on the metal film near the hole so as to surround the through hole.

According to a sixth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached to the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. A groove is provided in the metal film near the hole so as to surround the through hole.

According to a seventh aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached to the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. A convex portion is provided in the vicinity of the hole so as to surround the through-hole, and the metal film is provided at a position other than the upper surface of the convex portion on the surface of the glass pedestal on which the convex portion is provided. It is.

According to an eighth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the solder is not attached to the vicinity of the through hole, and the through hole on the surface of the glass pedestal on which the metal film is provided is provided. The glass pedestal, which is mirror-finished so as to surround the through hole, is exposed in the vicinity of the hole.

According to a ninth aspect of the present invention, in the semiconductor pressure sensor according to any one of the first to eighth aspects, the diameter of the pressure introducing hole is larger than the diameter of the through hole. .

According to a tenth aspect of the present invention, in the method for manufacturing a semiconductor pressure sensor according to the second aspect, the vicinity of the through-hole on the surface of the glass pedestal on which the metal film is provided is formed by removing the through-hole. As a method of exposing the glass pedestal roughened so as to surround, one surface of the glass pedestal is roughened, and the metal film is formed on the roughened surface of the glass pedestal. The metal film is removed by etching by masking the through hole and the vicinity thereof.

According to an eleventh aspect of the present invention, in the method of manufacturing a semiconductor pressure sensor according to the third aspect, the vicinity of the through-hole on the surface of the glass pedestal on which the metal film is provided is formed by removing the through-hole. As a method of exposing a Ni layer having an oxide film formed on the surface so as to surround the metal film, the metal film includes a plurality of metal layers including a Ni layer, and the metal film near the through hole is formed by:
Etching is performed until the Ni layer is exposed, and oxidation is performed in a high-temperature atmosphere to form a thin oxide film on the surface of the Ni layer.

According to a twelfth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the fourth aspect, wherein the glass pedestal is provided on the metal film in the vicinity of the through hole on the surface side on which the metal film is provided. As a method of providing a resin having heat resistance so as to surround the through-hole, using a mask having an opening to surround the through-hole, a resin having a liquid heat resistance so as to fill the opening. The method is characterized in that the mask is applied and the mask is removed.

According to a thirteenth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the fifth aspect, wherein the glass pedestal is provided on the metal film in the vicinity of the through hole on the surface side on which the metal film is provided. As a method of providing an aluminum layer so as to surround the through hole, an aluminum layer is formed by sputtering or vapor deposition using a mask having an opening so as to surround the through hole, and the mask is removed. It is a feature.

According to a fourteenth aspect of the present invention, in the method for manufacturing a semiconductor pressure sensor according to the sixth aspect, the metal film near the through hole on the surface of the glass pedestal on which the metal film is provided, As a method of providing a groove so as to surround the through hole, the groove is formed by pressing a cylindrical cutting blade against the metal film.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor pressure sensor according to the sixth aspect, the metal film near the through hole on the side of the glass pedestal on which the metal film is provided, As a method of providing a groove so as to surround the through hole, the groove is formed by shaving the metal film around the through hole with a drill.

According to a sixteenth aspect of the present invention, in the method for manufacturing a semiconductor pressure sensor according to the sixth aspect, the metal film near the through hole on the side of the glass pedestal on which the metal film is provided, As a method of providing a groove so as to surround the through-hole, the groove is formed by dissolving the metal film near the through-hole using laser light.

According to a seventeenth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the seventh aspect, wherein the through hole is formed near the through hole on the surface of the glass pedestal on which the metal film is provided. As a method of providing the convex portion, and providing the metal film at a position other than the upper surface of the convex portion on the surface of the glass pedestal on which the convex portion is provided, the through hole on one surface side of the glass pedestal The convex portion is formed in the vicinity of the through hole by cutting a portion other than the vicinity, the metal film is formed on the surface of the glass pedestal where the convex portion is formed, and polishing is performed until the convex portion is exposed. It is characterized by doing so.

According to an eighteenth aspect of the present invention, in the method of manufacturing a semiconductor pressure sensor according to the eighth aspect, the vicinity of the through-hole on the surface of the glass pedestal on which the metal film is provided, is defined by: As a method of exposing the glass pedestal which is mirror-finished so as to surround, the through-hole and the vicinity thereof are masked to roughen one surface side of the glass pedestal, and after removing the mask, the glass pedestal is roughened. The invention is characterized in that the metal film is formed on the planarized surface side.

[0030]

Embodiments of the present invention will be described below with reference to the drawings. Note that, as a conventional example, the same components as those shown in FIGS. 15 and 16 are denoted by the same reference numerals and description thereof is omitted.

Embodiment 1 FIG. 1 is a schematic sectional view showing a part of a semiconductor pressure sensor according to an embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is different from the conventional semiconductor pressure sensor shown in FIGS. 15 and 16 in that the metal film 3 in the vicinity of the through hole 2a of the glass pedestal 2 is removed, and the roughened glass pedestal 2 is removed. The configuration is exposed.

In this embodiment, as the metal film 3 formed on one surface of the glass pedestal 2, titanium (Ti) and chromium (Cr) are formed on the surface of the glass pedestal 2 (hereinafter, this layer is referred to as the uppermost layer). ), Palladium (Pd), nickel (Ni), platinum (Pt), and tungsten (W) are formed, and a Ni layer is formed thereon (hereinafter, this layer is referred to as an intermediate layer). Although a gold (Au) layer is formed on the Ni layer (hereinafter, this layer is referred to as a lowermost layer), the present invention is not limited to this.
Any metal film 3 to which the solder 5 adheres may be used.

Hereinafter, a method of forming the metal film 3 on one surface of the glass pedestal 2 will be described with reference to the drawings. FIG.
Metal film 3 on one surface of glass pedestal 2 according to this embodiment
It is a schematic sectional drawing which shows the formation process of. First, the glass pedestal 2
One side of the surface is polished with a coarse whetstone
Alternatively, the particles are sprayed by sandblasting to roughen the surface so that the metal film 3 can be easily attached (FIG. 2).
(A)).

Subsequently, a metal film 3 is formed by using a sputtering method (FIG. 2B). Here, as a method for preventing the metal film 3 from being formed on the inner wall of the through-hole 2a of the glass pedestal 2, wax is embedded in the through-hole 2a in advance.
After the metal film 3 is formed, there is a method of heating to melt and remove the wax, a method of masking the through-hole 2a with a mask, and the like.

Finally, a resist is applied to the glass pedestal 2 at a position other than the vicinity of the through hole 2a using a photolithography technique, the metal film 3 is removed by wet etching using the resist as a mask, and the resist is removed by plasma ashing or the like. It is removed (FIG. 2C).

Therefore, in the present embodiment, the metal film 3 is not formed near the through hole 2a of the glass pedestal 2, so that the solder 5 hardly adheres to the vicinity of the through hole 2a, and there is no thermal stress from outside. Even if a mechanical stress is applied, no tensile stress is generated in the vicinity of the through-hole 2a, and the occurrence of cracks can be prevented.

Embodiment 2 = FIG. 3 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment has a configuration in which the metal film 3 of the semiconductor pressure sensor shown in FIGS.
r, Pd, Ni, Pt, W, any one layer (first metal film 3a), the intermediate layer is Ni layer (second metal film 3b), and the lowermost layer is Au. Layer third metal film 3
c), wherein the third metal film 3c near the through hole 2a of the glass pedestal 2 is removed, and the exposed surface of the second metal film 3b is oxidized.

Hereinafter, a method of forming a metal film on one surface of the glass pedestal 2 will be described with reference to the drawings. FIG. 4 shows the first to third surfaces on one surface of the glass pedestal 2 according to the present embodiment.
FIG. 5 is a schematic cross-sectional view showing a step of forming metal films 3a to 3c of FIG.
First, one surface of the glass pedestal 2 is polished (polished) with a coarse grindstone, or sprayed by sandblasting to roughen the surface (FIG. 4A).

Subsequently, the first metal film 3a, the second metal film 3b, and the third metal film 3c are formed in this order on the roughened surface of the glass pedestal 2 by sputtering (FIG. 4).
(B)). Here, as a method for preventing the first to third metal films 3a to 3c from being formed on the inner wall of the through hole 2a of the glass pedestal 2, wax is buried in the through hole 2a in advance and the metal film 3 is formed. And a method of heating to melt and remove the wax, and a method of masking the through hole 2a with a mask.

Next, a resist is applied to portions of the glass pedestal 2 other than the vicinity of the through holes 2a by using photolithography technology, and the third metal film 3a is removed by wet etching using the resist as a mask to remove the glass pedestal 2. Exposing the second metal film 3b (Ni layer) in the vicinity of the through hole 2a,
The resist is removed by plasma ashing or the like (FIG. 4)
(C)). The etching of the third metal film 3c (Au layer) can be performed using aqua regia or a mixed solution of sodium cyanide and hydrogen peroxide.

Finally, the substrate is put into an oxidation furnace (not shown) at a temperature of several hundred degrees to oxidize the exposed surface of the second metal film 3b.

Accordingly, in the present embodiment, the second metal film 3b near the through hole 2a of the glass pedestal 2 is exposed and its surface is oxidized.
Is hardly attached to the vicinity of the through hole 2, and even if a thermal stress or a mechanical stress is applied from the outside, a tensile stress does not occur near the through hole 2 a, and the generation of a crack can be prevented.

Embodiment 3 = FIG. 5 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment has a structure in which a resin 6 having heat resistance is thinly coated on a metal film 3 near a through hole 2a of a glass pedestal 2 in the semiconductor pressure sensor shown in FIGS. 15 and 16 as a conventional example. It is. Teflon (heat resistance of about 260 ° C.), polyimide (heat resistance of about 220 ° C.), or the like is preferable as the resin 6 in consideration of the melting point of the solder 5.

Hereinafter, a method for coating the resin film 6 on the metal film 3 near the through hole 2a of the glass pedestal 2 will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view illustrating a process of coating the resin 6 on the metal film 3 near the through hole 2a of the glass pedestal 2 according to the present embodiment. First, one side of the glass pedestal 2 is polished with a coarse whetstone,
Alternatively, particles are sprayed by sand blasting to roughen the surface, and the metal film 3 is formed on the glass pedestal 2 by sputtering.
(FIG. 6 (a)).

Next, a mask having an opening 7a near the through-hole 2a of the glass pedestal 2 (in this embodiment, S
A liquid resin 6 having heat resistance is applied to the mask 7 using a metal mask 7 such as a US), and a squeegee (spatula) 8 is slid to fill the opening 6 with the resin 6 (FIG. 6).
(B)) Finally, the resin 6 is dried and hardened, and the mask 7 is removed (FIG. 6C).

Therefore, in this embodiment, the resin 6 is coated on the metal film 3 near the through hole 2a of the glass pedestal 2, so that the solder 5 hardly adheres to the vicinity of the through hole 2a. Even if a thermal stress or a mechanical stress is applied, no tensile stress is generated in the vicinity of the through-hole 2a, and the occurrence of cracks can be prevented.

Embodiment 4 = FIG. 7 is a schematic sectional view showing a pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment has a configuration in which an aluminum layer 9 is provided instead of the resin 6 in the semiconductor pressure sensor shown in FIG. Here, the configuration of the metal film 3 is as described in the first embodiment.
Same as ３3.

Hereinafter, a method of forming the aluminum layer 9 on the metal film 3 near the through hole 2a of the glass pedestal 2 will be described with reference to the drawings. FIG. 8 is a schematic cross-sectional view showing a step of forming an aluminum layer 9 on the metal film 3 near the through hole 2a of the glass pedestal 2 according to the present embodiment. First, the glass pedestal 2
One side of the surface is polished with a coarse whetstone
Alternatively, the metal film 3 is formed on the roughened surface of the glass pedestal 2 by a sputtering method by spraying particles by sandblasting to form a rough surface (FIG. 8A).

Next, a resist 10 is applied to the surface of the glass pedestal 2 on which the metal film 3 is formed, and the resist 10 near the through hole 2a is removed by photolithography and etching to form an opening 10a. Then, an aluminum layer 9 is formed by sputtering or vapor deposition using the resist 10 in which the opening 10a is formed as a mask, and the resist 10 is removed by plasma ashing or the like.

Here, regarding the solderability to metal,
Tin, silver, gold, copper, etc. have good solderability, but stainless steel,
Nichrome, aluminum, chromium, titanium, etc. have poor solderability. Nickel is also passivated when its surface is oxidized, resulting in poor solderability.

Therefore, in this embodiment, the aluminum layer 9 is formed on the metal film 3 near the through hole 2a of the glass pedestal 2.
Is formed, so that the solder 5 is formed near the through hole 2a.
Is hard to adhere, and even if a thermal stress or a mechanical stress is applied from the outside, no tensile stress is generated in the vicinity of the through-hole 2a, and the generation of cracks can be prevented.

In this embodiment, the aluminum layer 9 is formed on the metal film 3 in the vicinity of the through hole 2a of the glass pedestal 2. However, the present invention is not limited to this.
Materials with poor solderability, such as stainless steel, nichrome,
Aluminum, chromium, titanium, oxidized nickel,
An aluminum alloy or the like may be formed.

Embodiment 5 = FIG. 9 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment has a groove 11 formed in the metal film 3 near the through hole 2a of the glass pedestal 2 so as to surround the through hole 2a in the semiconductor pressure sensor shown in FIGS. 15 and 16 as a conventional example. Configuration. Here, as a method of forming the groove portion 11, FIG.
As shown in (a), a cylindrical cutting blade 12 is pressed around the through hole 2a and rotated, or as shown in FIG. 10 (b), a drill 13 having a sharp tip is circled around the through hole 2a. The metal film 3 around the through hole 2a with a laser beam 14 such as a YAG laser or a CO ₂ laser.
There is a method to dissolve. The configuration of the metal film 3 is the same as in the first to fourth embodiments. Also, the groove 11 is
The metal pipe 4 is formed so as to fit within the diameter of the pressure introducing hole 4a.

Therefore, in this embodiment, the groove 11
Accordingly, the solder 5 can be prevented from spreading and spreading, and even if a thermal stress or a mechanical stress is applied from the outside, a tensile stress does not occur in the vicinity of the through hole 2a, and the generation of a crack can be prevented. .

Embodiment 6 = FIG. 11 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is different from the semiconductor pressure sensor shown in FIGS. 15 and 16 as a conventional example in that a convex portion 15 is formed near the through hole 2 a of the glass pedestal 2, and the convex portion 15 of the glass pedestal 2 is formed. This is a configuration in which the metal film 3 is formed in a portion other than the portion where the convex portion 15 on the surface side is formed. The configuration of the metal film 3 is the same as in the first to fifth embodiments. Further, in the present embodiment, the height of the upper surface of the convex portion 15 and the surface of the metal film 3 are substantially equal and are flattened. However, the present invention is not limited to this.

Hereinafter, a convex portion 15 is formed in the vicinity of the through hole 2a of the glass pedestal 2, and a metal film is formed on a portion other than the portion where the convex portion 15 on the surface side of the glass pedestal 2 is formed. The method for forming 3 will be described with reference to the drawings. FIG.
Reference numeral 2 denotes a portion where the convex portion 15 is formed in the vicinity of the through hole 2a of the glass pedestal 2 according to the present embodiment, and where the convex portion 15 is formed on the surface of the glass pedestal 2 where the convex portion 15 is formed. FIG. 6 is a schematic cross-sectional view showing a manufacturing process for forming a metal film 3 in FIG. First, a portion other than the vicinity of the through hole 2a on one surface side of the glass pedestal 2 is cut by milling or sandblasting to form a convex portion 15 near the through hole 2a (FIG. 12A). Glass pedestal 2 with mask (not shown) on only
The metal film 3 is formed by sputtering or vapor deposition on the surface on which the convex portions 15 are formed (FIG. 12B).

Therefore, in the present embodiment, the convex portion 15 is formed near the through hole 2a of the glass pedestal 2, and the metal film 3 is not formed on the convex portion 15, so that the portion (glass surface) The solder 5 does not adhere to the surface, and no tensile stress is generated in the vicinity of the through hole 2a even when a thermal stress or a mechanical stress is applied from the outside, so that the generation of cracks can be prevented.

Embodiment 7 = FIG. 13 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment has a configuration in which the glass pedestal 2 near the through hole 2a is mirror-finished in the semiconductor pressure sensor shown in FIG.

Hereinafter, a method for forming a mirror surface near the through hole 2a of the glass pedestal 2 and forming the metal film 3 at other locations will be described with reference to the drawings. FIG. 14 is a schematic cross-sectional view showing a manufacturing process of forming a mirror surface near the through hole 2a of the glass pedestal 2 according to the present embodiment and forming the metal film 3 at other locations. First, the through hole 2a on one surface side of the glass pedestal 2 and its vicinity are masked with a resist 10 or a jig, and the surface of the glass pedestal 2 on which the resist 10 is applied is roughened by sandblasting or the like (FIG. 14). (A)), resist 1
0 is removed (FIG. 14B).

Finally, a metal film 3 is formed on the roughened surface of the glass pedestal 2 by sputtering or vapor deposition (FIG. 14C). At this time, the through hole 2 of the glass pedestal 2
Since the vicinity of a is mirror-finished, the metal film 3 does not adhere.

Therefore, in the present embodiment, since the vicinity of the through hole 2a of the glass pedestal 2 is mirror-finished, the solder 5
Does not adhere, and even if a thermal stress or a mechanical stress is applied from the outside, no tensile stress is generated in the vicinity of the through-hole 2a, and the occurrence of cracks can be prevented.

In all of the above-described embodiments, if the diameter of the pressure introducing hole 4a of the metal pipe 4 is made larger than the diameter of the through hole 2a of the glass pedestal 2, the pressure introducing hole of the metal pipe 4 becomes large. 4a can be reduced.

[0063]

According to the present invention, claims 1 to 8 or 10 are provided.
According to the present invention, the solder is not attached to the vicinity of the through hole on the surface of the glass pedestal on which the metal film is formed, so that the through hole 2a is not affected by external thermal stress or mechanical stress. Cracks can be prevented without generating tensile stress in the vicinity of the glass pedestal, and cracks can be generated in the glass pedestal even when misalignment occurs during die bonding between the glass pedestal and the metal member. And a method of manufacturing the same.

According to a ninth aspect of the present invention, in the semiconductor pressure sensor according to any one of the first to eighth aspects, the diameter of the pressure introducing hole is larger than the diameter of the through hole, so that the diameter of the pressure introducing hole of the metal member can be reduced. Clogging can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a part of a semiconductor pressure sensor according to one embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a step of forming a metal film on one surface of a glass pedestal according to the embodiment.

FIG. 3 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing a step of forming a metal film on one surface of a glass pedestal according to the embodiment.

FIG. 5 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view illustrating a step of coating a resin on a metal film near a through hole of a glass pedestal according to the present embodiment.

FIG. 7 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing a step of forming an aluminum layer on a metal film near a through hole of a glass pedestal according to the present embodiment.

FIG. 9 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating a method of forming a groove in a metal film near a through hole of a glass pedestal according to the embodiment;
(A)-(c) is a schematic sectional view showing an example.

FIG. 11 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 12 is a diagram illustrating a convex portion formed near the through hole of the glass pedestal according to the present embodiment, and a metal film formed on a portion other than the portion where the convex portion on the side of the glass pedestal formed with the convex portion is formed. FIG. 6 is a schematic cross-sectional view showing a manufacturing process to be performed.

FIG. 13 is a schematic sectional view showing a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view showing a manufacturing process of forming a mirror surface near the through hole of the glass pedestal according to the present embodiment and forming a metal film in other portions.

FIG. 15 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.

FIG. 16 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.

FIG. 17 is a schematic cross-sectional view showing an operation principle in which a crack occurs in a glass pedestal according to a conventional example.

[Explanation of symbols]

 Reference Signs List 1 semiconductor pressure sensor chip 1a diaphragm 2 glass pedestal 2a through hole 3 metal film 3a first metal film 3b second metal film 3c third metal film 4 metal pipe 4a pressure introduction hole 5 solder 6 resin 7 mask 7a opening Reference Signs List 8 squeegee 9 aluminum layer 10 resist 10a opening 11 groove 12 cutting blade 13 drill 14 laser beam 15 convex portion 16 polishing plate 17 package 17a concave portion 18 lead 19 wire 20 silicon resin 21 lid 22 board 23 borosilicate glass 24 pin 25 cap 26 Tensile stress 27 Crack

Continuation of the front page (72) Inventor Atsushi Ishigami 1048 Kazuma Kadoma, Kadoma City, Osaka Inside Matsushita Electric Works, Ltd.

Claims (18)

[Claims] 1. A semiconductor pressure sensor chip having a diaphragm formed by thinning a part of a semiconductor substrate and having a strain gauge formed on one surface of the diaphragm, and a through hole communicating with the diaphragm. A glass pedestal joined to the semiconductor pressure sensor chip, and a metal member having a pressure introduction hole communicating with the through-hole, a metal member on a surface side of the glass pedestal different from the joining surface with the semiconductor pressure sensor chip. A film is provided, in a semiconductor pressure sensor in which the metal film and the metal member are joined by solder,
A semiconductor pressure sensor, wherein the solder does not adhere to the vicinity of the through hole on the surface of the glass pedestal on which the metal film is provided. 2. A structure in which the solder does not adhere to the vicinity of the through hole, the vicinity of the through hole on the side of the glass pedestal on which the metal film is provided is roughened so as to surround the through hole. The semiconductor pressure sensor according to claim 1, wherein the glass pedestal is exposed. 3. A structure in which the solder does not adhere to the vicinity of the through-hole, an oxide film is formed on the surface of the glass pedestal so as to surround the through-hole in the vicinity of the through-hole on the side where the metal film is provided. 2. The semiconductor pressure sensor according to claim 1, wherein the formed Ni layer is exposed. 4. A configuration in which the solder does not adhere to the vicinity of the through-hole so as to surround the through-hole on the metal film near the through-hole on the side of the glass pedestal on which the metal film is provided. 2. The semiconductor pressure sensor according to claim 1, wherein a resin having heat resistance is provided. 5. A configuration in which the solder does not adhere to the vicinity of the through-hole so as to surround the through-hole on the metal film near the through-hole on the side of the glass pedestal on which the metal film is provided. The semiconductor pressure sensor according to claim 1, wherein an aluminum layer is provided. 6. A configuration in which the solder does not adhere to the vicinity of the through hole, wherein a groove is formed in the metal film near the through hole on the side of the glass pedestal on which the metal film is provided so as to surround the through hole. The semiconductor pressure sensor according to claim 1, further comprising: 7. A structure in which the solder does not adhere to the vicinity of the through hole, wherein a convex portion is provided in the vicinity of the through hole on the side of the glass pedestal on which the metal film is provided so as to surround the through hole. 2. The semiconductor pressure sensor according to claim 1, wherein the metal film is provided at a position other than an upper surface of the convex portion on a surface of the glass pedestal on which the convex portion is provided. 3. 8. A structure in which the solder does not adhere to the vicinity of the through hole, wherein the vicinity of the through hole on the side of the glass pedestal on which the metal film is provided is mirror-finished so as to surround the through hole. The semiconductor pressure sensor according to claim 1, wherein the glass pedestal is exposed. 9. The semiconductor pressure sensor according to claim 1, wherein the diameter of the pressure introducing hole is larger than the diameter of the through hole. 10. The method of manufacturing a semiconductor pressure sensor according to claim 2, wherein a surface of the glass pedestal near the through-hole on the side where the metal film is provided is roughened so as to surround the through-hole. As a method of exposing the said glass pedestal,
Roughening one surface of the glass pedestal, forming the metal film on the roughened surface of the glass pedestal, masking the through hole of the glass pedestal and its vicinity, and etching the metal film A method for manufacturing a semiconductor pressure sensor, wherein the pressure sensor is removed. 11. The method for manufacturing a semiconductor pressure sensor according to claim 3, wherein the vicinity of the through hole on the side of the glass pedestal on which the metal film is provided is oxidized on the surface so as to surround the through hole. As a method of exposing the Ni layer on which the film is formed, the metal film includes a plurality of metal layers including a Ni layer,
A step of etching the metal film in the vicinity of the through hole until the Ni layer is exposed and oxidizing the metal film in a high-temperature atmosphere to form a thin oxide film on the surface of the Ni layer; Manufacturing method of sensor. 12. The method of manufacturing a semiconductor pressure sensor according to claim 4, wherein the through hole is formed on the metal film near the through hole on the surface of the glass pedestal on which the metal film is provided. As a method of providing a resin having heat resistance as described above, using a mask having an opening so as to surround the through-hole, a liquid heat-resistant resin is applied so as to fill the opening, and the mask is formed. A method for manufacturing a semiconductor pressure sensor, characterized in that the semiconductor pressure sensor is removed. 13. The method for manufacturing a semiconductor pressure sensor according to claim 5, wherein the through hole is formed on the metal film near the through hole on the surface of the glass pedestal on which the metal film is provided. As a method of providing an aluminum layer, a semiconductor pressure sensor, wherein an aluminum layer is formed by sputtering or vapor deposition using a mask having an opening so as to surround the through hole, and the mask is removed Manufacturing method. 14. The method for manufacturing a semiconductor pressure sensor according to claim 6, wherein the metal film near the through hole on the surface of the glass pedestal on which the metal film is provided surrounds the through hole. Forming a groove on the metal film by pressing a cylindrical cutting blade against the metal film. 15. The method of manufacturing a semiconductor pressure sensor according to claim 6, wherein the metal film near the through hole on the side of the glass pedestal on which the metal film is provided surrounds the through hole. A method of providing a groove in the semiconductor pressure sensor, wherein the groove is formed by shaving the metal film around the through hole with a drill. 16. The method of manufacturing a semiconductor pressure sensor according to claim 6, wherein the metal film near the through hole on the side of the glass pedestal on which the metal film is provided surrounds the through hole. The method of manufacturing a semiconductor pressure sensor, wherein the groove is formed by dissolving the metal film in the vicinity of the through hole using a laser beam. 17. The method for manufacturing a semiconductor pressure sensor according to claim 7, wherein a convex portion is provided near the through hole on the side of the glass pedestal on which the metal film is provided so as to surround the through hole. As a method of providing the metal film on a portion of the glass pedestal other than the upper surface of the convex portion on the side where the convex portion is provided, a portion other than near the through hole on one surface side of the glass pedestal is cut. Forming the convex portion in the vicinity of the through hole, forming the metal film on the surface of the glass pedestal on which the convex portion is formed, and polishing until the convex portion is exposed. A method for manufacturing a semiconductor pressure sensor. 18. The method of manufacturing a semiconductor pressure sensor according to claim 8, wherein the vicinity of the through hole on the side of the glass pedestal on which the metal film is provided is mirror-finished so as to surround the through hole. As a method of exposing the glass pedestal,
The through hole and its vicinity are masked to roughen one surface side of the glass pedestal, and after removing the mask, the metal film is formed on the roughened surface side of the glass pedestal. A method for manufacturing a semiconductor pressure sensor, comprising: