JP2000162070A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JP2000162070A JP2000162070A JP10337490A JP33749098A JP2000162070A JP 2000162070 A JP2000162070 A JP 2000162070A JP 10337490 A JP10337490 A JP 10337490A JP 33749098 A JP33749098 A JP 33749098A JP 2000162070 A JP2000162070 A JP 2000162070A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- pressure sensor
- semiconductor pressure
- solder
- metal pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ダイアフラムの形
成された半導体圧力センサチップとパッケージの金属パ
イプとを台座を介して接合してなる半導体圧力センサに
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor in which a semiconductor pressure sensor chip on which a diaphragm is formed and a metal pipe of a package are joined via a pedestal.
【０００２】[0002]
【従来の技術】一般に、半導体圧力センサはエアコンや
空調機等の微圧領域の圧力の測定を行うものであり、図
５に示すように、凹部を形成することにより薄肉状に形
成されたダイアフラム１ａを有する半導体圧力センサチ
ップ１がガラス台座２に陽極接合等により接合され、中
心にコバール製又は４２アロイ等の金属パイプ４が配置
されたＰＰＳやＰＢＴ等のプラスチックパッケージ３内
に設置される。半導体圧力センサチップ１表面のアルミ
パッドとリード５とは金又はアルミ製のワイヤ６で接続
されている。なお、７はプラスチックパッケージ３の蓋
であり、１ｂは半導体圧力センサチップ１に形成された
歪みゲージ抵抗であり、１ｃは半導体圧力センサチップ
１の表面を保護するオーバーコートである。ガラス台座
２の材料としては、例えばパイレックスガラス（コーニ
ング社製、品番♯７７４０等）が用いられる。2. Description of the Related Art Generally, a semiconductor pressure sensor measures a pressure in a minute pressure region of an air conditioner, an air conditioner, or the like. As shown in FIG. 5, a diaphragm formed in a thin shape by forming a concave portion is provided. A semiconductor pressure sensor chip 1a is bonded to a glass pedestal 2 by anodic bonding or the like, and is installed in a plastic package 3 such as PPS or PBT in which a metal pipe 4 made of Kovar or 42 alloy is disposed at the center. The aluminum pad on the surface of the semiconductor pressure sensor chip 1 and the lead 5 are connected by a gold or aluminum wire 6. Reference numeral 7 denotes a cover of the plastic package 3, reference numeral 1b denotes a strain gauge resistor formed on the semiconductor pressure sensor chip 1, and reference numeral 1c denotes an overcoat for protecting the surface of the semiconductor pressure sensor chip 1. As a material of the glass pedestal 2, for example, Pyrex glass (manufactured by Corning, product number # 7740, etc.) is used.
【０００３】ガラス台座２の中心部には、半導体圧力セ
ンサチップ１のダイアフラム１ａに圧力を印加するため
の貫通孔２ａが形成され、ガラス台座２はこの貫通孔２
ａと金属パイプ４の貫通孔４ａとが対向するような配置
で、金属パイプ４に接合される。ガラス台座２と金属パ
イプ４とは半田９で接合される。この場合、半田９で接
合するために、ガラス台座２の半導体圧力センサチップ
１と接合しない側の面にはメタライズ層８が形成され
る。メタライズ層８の例としては、Ｃｒ（最下層）／Ｐ
ｔ／Ａｕ（最上層）、Ｔｉ（最下層）／Ｎｉ／Ａｕ（最
上層）、Ｔｉ（最下層）／Ｐｔ／Ａｕ（最上層）等が挙
げられる。半田９としては、錫、錫−アンチモン合金、
鉛、錫−鉛合金、金−シリコン合金、錫−銀合金等があ
る。In the center of the glass pedestal 2, a through-hole 2a for applying pressure to the diaphragm 1a of the semiconductor pressure sensor chip 1 is formed.
a and the through-hole 4a of the metal pipe 4 are joined to the metal pipe 4 in such an arrangement that they face each other. The glass pedestal 2 and the metal pipe 4 are joined with solder 9. In this case, the metallized layer 8 is formed on the surface of the glass pedestal 2 on the side not joined to the semiconductor pressure sensor chip 1 for joining with the solder 9. As an example of the metallized layer 8, Cr (lowest layer) / P
t / Au (top layer), Ti (bottom layer) / Ni / Au (top layer), Ti (bottom layer) / Pt / Au (top layer), and the like. As the solder 9, tin, tin-antimony alloy,
There are lead, tin-lead alloy, gold-silicon alloy, tin-silver alloy and the like.
【０００４】また、図６は、パッケージとして、金属ス
テムのパッケージ３０を使用したものを示している。３
１はキャップであり、金属ステムとは溶接で接続され
る。FIG. 6 shows a package using a metal stem package 30 as a package. 3
Reference numeral 1 denotes a cap, which is connected to the metal stem by welding.
【０００５】金属パイプ４とガラス台座２とがメタライ
ズ層８を介して半田９により接合される。メタライズ層
８の最上層のＡｕの表面には半田９が濡れるのである。[0005] The metal pipe 4 and the glass pedestal 2 are joined by the solder 9 via the metallized layer 8. The solder 9 wets the surface of the uppermost Au layer of the metallization layer 8.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上述の
ような半導体圧力センサにあっては、ガラス台座２と金
属パイプ４との半田９によるダイボンド接合時に、図７
に示すように、ガラス台座２の貫通孔２ａと金属パイプ
４の貫通孔４ａとの接合位置ずれが発生した場合や、図
８に示すように、金属パイプ４の貫通孔４ａの孔径より
ガラス台座２の貫通孔２ａの孔径が小さくて、金属パイ
プ４の貫通孔４ａの上方にガラス台座２の貫通孔２ａの
周囲部が配置された場合には、ガラス台座２の貫通孔２
ａのエッジ部分に半田９が溜まってしまう。However, in the above-described semiconductor pressure sensor, when the glass pedestal 2 and the metal pipe 4 are die-bonded to each other by the solder 9 in FIG.
As shown in FIG. 8, when the joint position between the through-hole 2a of the glass pedestal 2 and the through-hole 4a of the metal pipe 4 is shifted, or as shown in FIG. 2 is smaller than the through hole 4a of the metal pipe 4, and the periphery of the through hole 2a of the glass pedestal 2 is disposed above the through hole 2a of the glass pedestal 2.
The solder 9 accumulates at the edge portion a.
【０００７】この場合には、図９に示すように、半田９
が固化する時に、温度の低い金属パイプ４の貫通孔４ａ
の周辺から固化していく。従って、半田９が固化する時
には、引っ張り応力が加わり、ガラス台座２の貫通孔２
ａの開口部周辺にクラック１０が入るため、半導体圧力
センサチップ１が破壊されてしまうという問題があっ
た。In this case, as shown in FIG.
Solidifies when the through hole 4a of the metal pipe 4 having a low temperature is formed.
Solidifies from the surrounding area. Therefore, when the solder 9 is solidified, a tensile stress is applied, and the through hole 2 of the glass pedestal 2 is formed.
There is a problem that the semiconductor pressure sensor chip 1 is broken because the crack 10 is formed around the opening a.
【０００８】本発明は、上記の点に鑑みてなしたもので
あり、その目的とするところは、金属パイプと台座の接
合に際し、台座にクラックが発生することのない半導体
圧力センサを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor pressure sensor which does not generate cracks in a pedestal when joining a metal pipe and a pedestal. It is in.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の発明は、
凹部を形成することにより薄肉状に形成されたダイアフ
ラムを有する半導体圧力センサチップと前記ダイアフラ
ムに圧力を導入するための貫通孔が形成された台座とを
接合し、該台座の前記半導体圧力センサチップとの接合
面と反対側の面にはメタライズ層を形成し、該メタライ
ズ層を介してパッケージの金属パイプと半田接合してな
る半導体圧力センサにおいて、前記金属パイプの貫通孔
の径を前記台座の貫通孔の径より小さくするとともに、
前記金属パイプの貫通孔の開口部近傍を半田が濡れ難い
材料で構成するようにしたことを特徴とするものであ
る。According to the first aspect of the present invention,
A semiconductor pressure sensor chip having a diaphragm formed in a thin shape by forming a concave portion and a pedestal having a through hole formed therein for introducing pressure to the diaphragm are joined, and the semiconductor pressure sensor chip of the pedestal is joined to the semiconductor pressure sensor chip. In a semiconductor pressure sensor formed by forming a metallized layer on the surface opposite to the bonding surface of the above and soldering the metallized layer to the metal pipe of the package via the metallized layer, the diameter of the through hole of the metal pipe is made to pass through the pedestal. Smaller than the diameter of the hole,
The vicinity of the opening of the through hole of the metal pipe is made of a material to which solder is unlikely to get wet.
【００１０】請求項２記載の発明は、請求項１記載の発
明において、前記金属パイプの貫通孔の開口部近傍に半
田が濡れ難い金属薄膜をメタライズするようにしたこと
を特徴とするものである。The invention according to claim 2 is characterized in that, in the invention according to claim 1, metallization of a metal thin film that is difficult for solder to wet near the opening of the through hole of the metal pipe. .
【００１１】請求項３記載の発明は、請求項１記載の発
明において、前記金属パイプの貫通孔の開口部近傍には
メッキを形成せず、半田が濡れ難い下地金属が露出する
ようにしたことを特徴とするものである。According to a third aspect of the present invention, in the first aspect of the present invention, no plating is formed near the opening of the through hole of the metal pipe, and the underlying metal to which solder is unlikely to wet is exposed. It is characterized by the following.
【００１２】請求項４記載の発明は、請求項１記載の発
明において、前記金属パイプの表面にはＮｉメッキを形
成し、さらにその上にＡｕメッキを形成するとともに、
金属パイプの貫通孔の開口部近傍にはＡｕメッキを形成
せず半田が濡れ難いＮｉメッキが露出するようにしたこ
とを特徴とするものである。According to a fourth aspect of the present invention, in the first aspect of the present invention, Ni plating is formed on the surface of the metal pipe, and Au plating is further formed thereon.
Au plating is not formed in the vicinity of the opening of the through hole of the metal pipe, and Ni plating, which is less likely to wet solder, is exposed.
【００１３】請求項５記載の発明は、請求項１記載の発
明において、前記金属パイプの貫通孔の開口部近傍に段
部を形成し、該段部に収まる鍔部を有し管部が金属パイ
プの貫通孔に収まる補助パイプを設け、該補助パイプの
鍔部の少なくとも上面は半田が濡れ難い金属で形成する
ようにしたことを特徴とするものである。According to a fifth aspect of the present invention, in the first aspect of the present invention, a step is formed near the opening of the through hole of the metal pipe, and a flange is provided to fit in the step and the pipe is made of metal. An auxiliary pipe that fits in a through hole of the pipe is provided, and at least an upper surface of a flange portion of the auxiliary pipe is formed of a metal to which solder is hardly wetted.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態の一例
を図面に基づき説明する。図１は本発明の第１の実施形
態の半導体圧力センサに係る半導体圧力センサチップと
ガラス台座と金属パイプの接合状態を示す断面図であ
る。以下に示す実施形態においては、半導体圧力センサ
の基本的構成は従来例で説明したものと同等であるの
で、同一部分には同一符号を付して説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing a joint state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a first embodiment of the present invention. In the embodiments described below, since the basic configuration of the semiconductor pressure sensor is the same as that described in the conventional example, the same portions are denoted by the same reference numerals and description thereof will be omitted.
【００１５】本実施形態においては、金属パイプ４には
Ｎｉメッキ１１（約３μｍ〜７μｍ）が施され、さらに
その上にＡｕメッキ１２（約０．５μｍ〜３μｍ）が施
されており、本実施形態の特徴は、金属パイプ４の貫通
孔４ａの径をガラス台座２の貫通孔２ａの径より小さく
するとともに、金属パイプ４の貫通孔４ａの開口部近傍
をＡｕメッキ１２の上に半田が濡れ難い金属薄膜１３を
メタライズ形成している点である。金属薄膜１３として
は、例えば、Ｔｉ、ＴｉＮ、Ｃｒ、Ｗ、Ａｌ等の金属を
スパッタ等により数千Å〜数μｍの厚さに形成する。In the present embodiment, the metal pipe 4 is provided with a Ni plating 11 (about 3 μm to 7 μm) and further thereon with an Au plating 12 (about 0.5 μm to 3 μm). The feature of the embodiment is that the diameter of the through-hole 4a of the metal pipe 4 is made smaller than the diameter of the through-hole 2a of the glass pedestal 2, and the vicinity of the opening of the through-hole 4a of the metal pipe 4 is wetted with solder on the Au plating 12. The point is that the metal thin film 13 which is difficult to form is metallized. As the metal thin film 13, for example, a metal such as Ti, TiN, Cr, W, or Al is formed to a thickness of several thousand to several micrometers by sputtering or the like.
【００１６】本実施形態によれば、金属パイプ４の貫通
孔４ａの径がガラス台座２の貫通孔２ａの径より小さく
なっており、かつ、金属パイプ４の貫通孔４ａの開口部
近傍を半田９が濡れ難い金属薄膜１３をメタライズ形成
しているので、金属パイプ４とガラス台座２の半田接合
時に、溶融した半田９が金属パイプ４の貫通孔４ａに流
れ込むことがなくなる。また、半田固化時には、金属パ
イプ４の貫通孔４ａの上方及び周囲の温度が低くなる
が、貫通孔４ａの近傍は半田が濡れ難い金属薄膜１３が
メタライズ形成されており、半田９は貫通孔４ａの近傍
から離れた位置に存在し、半田９を挟んだ両材料の温度
は均一であるので、半田９は均一に固化し、半田９内部
に歪みは発生しない。According to the present embodiment, the diameter of the through hole 4a of the metal pipe 4 is smaller than the diameter of the through hole 2a of the glass pedestal 2, and the vicinity of the opening of the through hole 4a of the metal pipe 4 is soldered. Since the metal thin film 9 is formed of the metal thin film 13 which is hard to wet, the molten solder 9 does not flow into the through hole 4a of the metal pipe 4 when the metal pipe 4 and the glass pedestal 2 are soldered. Further, when the solder is solidified, the temperature above and around the through hole 4a of the metal pipe 4 decreases, but a metal thin film 13 that is hard to wet with solder is metallized near the through hole 4a. And the temperature of the two materials sandwiching the solder 9 is uniform, so that the solder 9 is solidified uniformly and no distortion occurs inside the solder 9.
【００１７】なお、本実施形態では、金属パイプ４の貫
通孔４ａの径をガラス台座２の貫通孔２ａの径に対して
小さくするようにしているが、ガラス台座２の貫通孔２
ａの径の方を金属パイプ４の貫通孔４ａの径に対して大
きくすることも考えられるが、ガラス台座２の貫通孔２
ａの径が大きくなりすぎると、ガラス台座２の機械的強
度が低下してしまうので、金属パイプ４の貫通孔４ａの
径の方をガラス台座２の貫通孔２ａの径に対して小さく
するようにした方が良い。また、金属パイプ４の貫通孔
４ａの径が小さくなると、半田詰まりが生じやすいが、
半田９の金属パイプ４の貫通孔４ａへの流れ込みが防止
されているので問題ない。In this embodiment, the diameter of the through hole 4a of the metal pipe 4 is made smaller than the diameter of the through hole 2a of the glass pedestal 2.
Although it is conceivable to make the diameter of “a” larger than the diameter of the through hole 4 a of the metal pipe 4,
If the diameter of “a” is too large, the mechanical strength of the glass pedestal 2 is reduced. Therefore, the diameter of the through hole 4 a of the metal pipe 4 should be smaller than the diameter of the through hole 2 a of the glass pedestal 2. It is better to Also, when the diameter of the through hole 4a of the metal pipe 4 is small, solder clogging is likely to occur,
There is no problem because the solder 9 is prevented from flowing into the through hole 4a of the metal pipe 4.
【００１８】メタライズ層８の形成されたガラス台座２
は、反対側の面が半導体圧力センサウエハに陽極接合に
より接合される。陽極接合の条件としては、真空雰囲気
中で約４００℃に加熱し、約５００Ｖ〜８００Ｖの直流
電圧を半導体圧力センサウエハ側が正極になるように印
加すると、静電引力により原子的に接合されるのであ
る。Glass pedestal 2 on which metallized layer 8 is formed
Is bonded to the semiconductor pressure sensor wafer by anodic bonding on the opposite surface. As a condition of the anodic bonding, when the semiconductor pressure sensor wafer is heated to about 400 ° C. in a vacuum atmosphere and a DC voltage of about 500 V to 800 V is applied so that the semiconductor pressure sensor wafer side becomes a positive electrode, atomic bonding is performed by electrostatic attraction. .
【００１９】ガラス台座２に接合された半導体圧力セン
サウエハをダイシングして、個々の半導体圧力センサチ
ップ１（約２〜３ｍｍ角）にし、これをパッケージの金
属パイプ４上に半田９によりダイボンド接合して、図１
のような構造のものになるのである。半田９の厚みは厚
い部分で３０〜１００μｍであり、ガラス台座２の貫通
孔２ａの半導体圧力センサチップ１側の大きさは、約φ
０．６〜１．３ｍｍである。The semiconductor pressure sensor wafer bonded to the glass pedestal 2 is diced into individual semiconductor pressure sensor chips 1 (about 2 to 3 mm square), which are die-bonded to the metal pipe 4 of the package by solder 9. , FIG.
The structure is as follows. The thickness of the solder 9 is 30 to 100 μm in a thick portion, and the size of the through hole 2 a of the glass pedestal 2 on the semiconductor pressure sensor chip 1 side is about φ.
0.6 to 1.3 mm.
【００２０】従来、ガラス台座２の貫通孔２ａの開口部
エッジのメタライズ層８とガラス台座２との接合界面端
部（貫通孔２ａ内壁側）付近を起点として、クラックが
ガラス台座２の内部方向へ広がる場合が多かった。本実
施形態では、前述のように、金属パイプ４とガラス台座
２の半田接合時に、溶融した半田９が金属パイプ４の貫
通孔４ａに流れ込むことがなくなり、貫通孔４ａの開口
部近傍で半田９が固化することがないので、半田固化時
に発生する応力によるクラックの発生を抑制することが
できるのである。Conventionally, a crack starts in the inside of the glass pedestal 2 starting from the vicinity of the end of the interface between the metallized layer 8 and the glass pedestal 2 at the opening edge of the through hole 2a of the glass pedestal 2 (the inner wall side of the through hole 2a). In many cases. In the present embodiment, as described above, the molten solder 9 does not flow into the through-hole 4a of the metal pipe 4 at the time of soldering the metal pipe 4 and the glass pedestal 2, and the solder 9 is formed near the opening of the through-hole 4a. Since the solidification does not occur, it is possible to suppress the occurrence of cracks due to the stress generated during the solidification of the solder.
【００２１】従って、半田９として、融点が２８０℃と
高く、また、ヤング率も約６０００ｋｇ／ｃｍ2 と大き
く硬く、従来、クラックが発生しやすかったＡｕ−Ｓｎ
２０％半田９を使用した場合でも、クラックの発生を防
止できる。Accordingly, the melting point of the solder 9 is as high as 280 ° C., the Young's modulus is as large as about 6000 kg / cm 2, and the solder 9 is conventionally Au-Sn, which is liable to crack.
Even when 20% solder 9 is used, the occurrence of cracks can be prevented.
【００２２】図２は本発明の第２の実施形態の半導体圧
力センサに係る半導体圧力センサチップとガラス台座と
金属パイプの接合状態を示す断面図である。本実施形態
では、図１で示した第１の実施形態のものにおいて、半
田が濡れ難い材料として、金属薄膜１３をメタライズ形
成する代わりに、金属パイプ４の貫通孔４ａの開口部近
傍のＮｉメッキ１１及びＡｕメッキ１２を部分的に形成
しないようにして、金属パイプ４の下地のコバール又は
４２アロイの表面を露出１４させるようにしている。半
田９は露出した下地には濡れ難いのである。メッキを行
う前に金属パイプ４の貫通孔４ａの開口部近傍にレジス
ト等を塗布しておき、メッキの後、レジスト等を溶剤で
除去することにより、下地の露出１４を容易に形成でき
る。FIG. 2 is a cross-sectional view showing a joint state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a second embodiment of the present invention. In the present embodiment, in the first embodiment shown in FIG. 1, instead of forming the metal thin film 13 as a material that is unlikely to be wet with solder, the metal thin film 13 is formed by Ni plating near the opening of the through hole 4a of the metal pipe 4. 11 and Au plating 12 are not formed partially, so that the surface of the Kovar or 42 alloy underlying the metal pipe 4 is exposed 14. The solder 9 is hardly wet on the exposed base. Before plating, a resist or the like is applied to the vicinity of the opening of the through hole 4a of the metal pipe 4, and after plating, the resist or the like is removed with a solvent, so that the exposed base 14 can be easily formed.
【００２３】本実施形態においても、第１の実施形態と
同等の効果を奏する。つまり、金属パイプ４の貫通孔４
ａの径を小さくしても、半田９が貫通孔４ａに流れ込む
こともなく、また、半田固化時において、半田９を挟む
材料の温度が均一なため、半田９内部に歪みが発生せ
ず、ガラス台座２の貫通孔２ａの開口部の角部にクラッ
クが発生することはない。In this embodiment, the same effects as those of the first embodiment can be obtained. That is, the through hole 4 of the metal pipe 4
Even if the diameter of a is small, the solder 9 does not flow into the through-hole 4a, and the temperature of the material sandwiching the solder 9 is uniform during the solidification of the solder, so that no distortion occurs inside the solder 9, No crack is generated at the corner of the opening of the through hole 2a of the glass pedestal 2.
【００２４】図３は本発明の第３の実施形態の半導体圧
力センサに係る半導体圧力センサチップとガラス台座と
金属パイプの接合状態を示す断面図である。本実施形態
では、図１で示した第１の実施形態のものにおいて、半
田が濡れ難い材料として、金属薄膜１３をメタライズ形
成する代わりに、金属パイプ４の貫通孔４ａの開口部近
傍のＮｉメッキ１１及びＡｕメッキ１２の内、Ａｕメッ
キ１２を部分的に形成しないようにして、Ｎｉメッキ１
１の表面を露出１１ａさせるようにしている。半田９は
Ｎｉメッキ１１の露出した表面には濡れ難いのである。
Ｎｉメッキ１１を形成した後、Ａｕメッキ１２を形成す
る前に、金属パイプ４の貫通孔４ａの開口部近傍にレジ
スト等を塗布しておき、Ａｕメッキ１２形成の後、レジ
スト等を溶剤で除去することにより、容易にＮｉメッキ
１１の表面の露出１１ａを形成することができる。FIG. 3 is a cross-sectional view showing a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a third embodiment of the present invention. In the present embodiment, in the first embodiment shown in FIG. 1, instead of forming the metal thin film 13 as a material that is unlikely to be wet with solder, the metal thin film 13 is formed by Ni plating near the opening of the through hole 4a of the metal pipe 4. 11 and the Au plating 12 so that the Au plating 12 is not formed partially,
1 is exposed 11a. The solder 9 is hard to wet the exposed surface of the Ni plating 11.
After the Ni plating 11 is formed and before the Au plating 12 is formed, a resist or the like is applied near the opening of the through hole 4a of the metal pipe 4, and after the Au plating 12 is formed, the resist or the like is removed with a solvent. By doing so, the exposed surface 11a of the Ni plating 11 can be easily formed.
【００２５】本実施形態においても、第１、第２の実施
形態と同等の効果を奏する。図４は本発明の第４の実施
形態の半導体圧力センサに係る半導体圧力センサチップ
とガラス台座と金属パイプの接合状態を示す断面図であ
る。本実施形態では、図１で示した第１の実施形態のも
のにおいて、半田が濡れ難い材料として、金属薄膜１３
をメタライズ形成する代わりに、金属パイプ４の貫通孔
４ａの開口部近傍に段部４ｂを形成し、段部４ｂに収ま
る鍔部１５ａを有し管部１５ｂが金属パイプ４の貫通孔
４ａに収まる補助パイプ１５を設け、補助パイプ１５の
鍔部１５ａの少なくとも上面を半田が濡れ難い金属、例
えば、Ｎｉ、Ａｌ、Ｔｉ、コバール等をメッキあるいは
メタライズ形成するようにした。管部１５ｂの内径は、
金属パイプ４の貫通孔４ａの径より僅かに大きな径とな
るようにしておき、かしめにより金属パイプ４に取り付
ける。In this embodiment, the same effects as those of the first and second embodiments can be obtained. FIG. 4 is a cross-sectional view showing a joint state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor of a fourth embodiment of the present invention. In the present embodiment, the metal thin film 13 of the first embodiment shown in FIG.
Is formed in the vicinity of the opening of the through-hole 4a of the metal pipe 4, and a step 15b is provided near the opening of the through-hole 4a of the metal pipe 4. The flange 15a fits in the step 4b, and the pipe 15b fits in the through-hole 4a of the metal pipe 4. The auxiliary pipe 15 is provided, and at least the upper surface of the flange portion 15a of the auxiliary pipe 15 is formed by plating or metallizing a metal, such as Ni, Al, Ti, or Kovar, to which solder is unlikely to wet. The inner diameter of the tube portion 15b is
The diameter is slightly larger than the diameter of the through hole 4a of the metal pipe 4, and the metal pipe 4 is attached to the metal pipe 4 by swaging.
【００２６】本実施形態においても、第１乃至第３の実
施形態と同等の効果を奏する。つまり、補助パイプ１５
の鍔部１５ａの上 には半田が濡れ難い金属が形成され
ているので、半田９が貫通孔４ａに流れ込むこともな
く、また、半田固化時において、半田９を挟む材料の温
度が均一なため、半田９内部に歪みが発生せず、ガラス
台座２の貫通孔２ａの開口部の角部にクラックが発生す
ることはない。In this embodiment, the same effects as those of the first to third embodiments can be obtained. That is, the auxiliary pipe 15
Since the metal on which the solder is hardly wetted is formed on the flange portion 15a, the solder 9 does not flow into the through hole 4a, and the temperature of the material sandwiching the solder 9 is uniform during the solidification of the solder. In addition, no distortion is generated inside the solder 9, and no crack is generated at the corner of the opening of the through hole 2 a of the glass pedestal 2.
【００２７】[0027]
【発明の効果】以上のように、請求項１乃至請求項５記
載の発明によれば、凹部を形成することにより薄肉状に
形成されたダイアフラムを有する半導体圧力センサチッ
プと前記ダイアフラムに圧力を導入するための貫通孔が
形成された台座とを接合し、該台座の前記半導体圧力セ
ンサチップとの接合面と反対側の面にはメタライズ層を
形成し、該メタライズ層を介してパッケージの金属パイ
プと半田接合してなる半導体圧力センサにおいて、前記
金属パイプの貫通孔の径を前記台座の貫通孔の径より小
さくするとともに、前記金属パイプの貫通孔の開口部近
傍を半田が濡れ難い材料で構成するようにしたので、前
記金属パイプとガラス台座の半田接合時に、溶融した半
田が金属パイプの貫通孔に流れ込むことがなくなり、ま
た、半田固化時には、金属パイプの貫通孔の上方及び周
囲の温度が低くなるが、貫通孔の近傍は半田が濡れ難い
材料で構成されており、半田は貫通孔の近傍から離れた
位置に存在し、半田を挟んだ両材料の温度は均一であ
り、半田は均一に固化し、半田内部に歪みは発生しな
い。従って、半田の固化時の応力がかからず、金属パイ
プと台座の接合に際し、台座にクラックが発生すること
のない半導体圧力センサが提供できた。As described above, according to the first to fifth aspects of the present invention, a semiconductor pressure sensor chip having a thin-walled diaphragm formed by forming a concave portion and pressure is introduced to the diaphragm. And a metallized layer is formed on the surface of the pedestal opposite to the surface where the semiconductor pressure sensor chip is bonded, and a metal pipe of a package is formed via the metallized layer. In the semiconductor pressure sensor formed by soldering, the diameter of the through-hole of the metal pipe is made smaller than the diameter of the through-hole of the pedestal, and the vicinity of the opening of the through-hole of the metal pipe is formed of a material that is difficult for solder to wet. Therefore, at the time of soldering the metal pipe and the glass pedestal, the molten solder does not flow into the through-hole of the metal pipe, and also at the time of solder solidification. However, the temperature above and around the through-hole of the metal pipe becomes low, but the vicinity of the through-hole is made of a material that is unlikely to wet the solder, and the solder exists at a position away from the vicinity of the through-hole, and sandwiches the solder. The temperatures of the two materials are uniform, the solder solidifies uniformly, and no distortion occurs inside the solder. Accordingly, a semiconductor pressure sensor can be provided in which no stress is applied at the time of solidification of the solder and no crack is generated in the pedestal when the metal pipe and the pedestal are joined.
【図１】本発明の第１の実施形態の半導体圧力センサに
係る半導体圧力センサチップとガラス台座と金属パイプ
の接合状態を示す断面図である。FIG. 1 is a cross-sectional view showing a bonding state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態の半導体圧力センサに
係る半導体圧力センサチップとガラス台座と金属パイプ
の接合状態を示す断面図である。FIG. 2 is a cross-sectional view illustrating a bonding state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a second embodiment of the present invention.
【図３】本発明の第３の実施形態の半導体圧力センサに
係る半導体圧力センサチップとガラス台座と金属パイプ
の接合状態を示す断面図である。FIG. 3 is a cross-sectional view showing a joint state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a third embodiment of the present invention.
【図４】本発明の第４の実施形態の半導体圧力センサに
係る半導体圧力センサチップとガラス台座と金属パイプ
の接合状態を示す断面図である。FIG. 4 is a cross-sectional view illustrating a joint state of a semiconductor pressure sensor chip, a glass pedestal, and a metal pipe according to a semiconductor pressure sensor according to a fourth embodiment of the present invention.
【図５】従来例に係る半導体圧力センサの概略構成を示
す断面図である。FIG. 5 is a sectional view showing a schematic configuration of a semiconductor pressure sensor according to a conventional example.
【図６】他の従来例に係る半導体圧力センサの概略構成
を示す断面図である。FIG. 6 is a cross-sectional view illustrating a schematic configuration of a semiconductor pressure sensor according to another conventional example.
【図７】従来例に係る半導体圧力センサの問題点の一例
を示す説明図である。FIG. 7 is an explanatory diagram showing an example of a problem of a semiconductor pressure sensor according to a conventional example.
【図８】従来例に係る半導体圧力センサの問題点の他の
例を示す説明図である。FIG. 8 is an explanatory diagram showing another example of the problem of the semiconductor pressure sensor according to the conventional example.
【図９】従来の半導体圧力センサに係る半田固化時の状
態変化の説明図である。FIG. 9 is an explanatory view of a state change during solidification of solder in a conventional semiconductor pressure sensor.
１ 半導体圧力センサチップ １ａ ダイアフラム １ｂ 歪みゲージ抵抗 １ｃ オーバーコート ２ ガラス台座 ２ａ 貫通孔 ３ プラスチックパッケージ ４ 金属パイプ ４ａ 貫通孔 ５ リード ６ ワイヤ ７ 蓋 ８ メタライズ層 ９ 半田 １０ クラック １１ Ｎｉメッキ １１ａ Ｎｉメッキの露出 １２ Ａｕメッキ １３ 金属薄膜 １４ 下地の露出 １５ 補助パイプ １５ａ 鍔部 １５ｂ 管部 DESCRIPTION OF SYMBOLS 1 Semiconductor pressure sensor chip 1a Diaphragm 1b Strain gauge resistance 1c Overcoat 2 Glass pedestal 2a Through hole 3 Plastic package 4 Metal pipe 4a Through hole 5 Lead 6 Wire 7 Cover 8 Metallization layer 9 Solder 10 Crack 11 Ni plating 11a Ni plating exposure 12 Au plating 13 Metal thin film 14 Exposure of base 15 Auxiliary pipe 15a Flange 15b Tube
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安田 正治 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 高倉 信之 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 2F055 AA40 BB20 CC02 DD01 DD07 EE13 FF23 FF43 GG14 4M112 AA01 BA01 CA01 GA01 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shoji Yasuda 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. Term (reference) 2F055 AA40 BB20 CC02 DD01 DD07 EE13 FF23 FF43 GG14 4M112 AA01 BA01 CA01 GA01
Claims (5)
されたダイアフラムを有する半導体圧力センサチップと
前記ダイアフラムに圧力を導入するための貫通孔が形成
された台座とを接合し、該台座の前記半導体圧力センサ
チップとの接合面と反対側の面にはメタライズ層を形成
し、該メタライズ層を介してパッケージの金属パイプと
半田接合してなる半導体圧力センサにおいて、前記金属
パイプの貫通孔の径を前記台座の貫通孔の径より小さく
するとともに、前記金属パイプの貫通孔の開口部近傍を
半田が濡れ難い材料で構成するようにしたことを特徴と
する半導体圧力センサ。1. A semiconductor pressure sensor chip having a diaphragm formed in a thin shape by forming a concave portion, and a pedestal having a through-hole for introducing pressure to the diaphragm are joined to each other. In a semiconductor pressure sensor formed by forming a metallized layer on a surface opposite to a bonding surface with a semiconductor pressure sensor chip, and soldering the metallized layer to a metal pipe of a package via the metallized layer, a diameter of a through hole of the metal pipe is provided. Wherein the diameter of the through hole of the base is smaller than the diameter of the through hole of the pedestal, and the vicinity of the opening of the through hole of the metal pipe is made of a material to which solder is unlikely to wet.
半田が濡れ難い金属薄膜をメタライズするようにしたこ
とを特徴とする請求項１記載の半導体圧力センサ。2. The semiconductor pressure sensor according to claim 1, wherein a metal thin film, which is difficult for solder to wet, is metallized in the vicinity of the opening of the through hole of the metal pipe.
はメッキを形成せず、半田が濡れ難い下地金属が露出す
るようにしたことを特徴とする請求項１記載の半導体圧
力センサ。3. The semiconductor pressure sensor according to claim 1, wherein no plating is formed in the vicinity of the opening of the through hole of the metal pipe, and an underlying metal to which solder is unlikely to be wet is exposed.
形成し、さらにその上にＡｕメッキを形成するととも
に、金属パイプの貫通孔の開口部近傍にはＡｕメッキを
形成せず半田が濡れ難いＮｉメッキが露出するようにし
たことを特徴とする請求項１記載の半導体圧力センサ。4. A metal plating is formed on the surface of the metal pipe by Ni plating, and further, Au plating is formed thereon, and the Au plating is not formed near the opening of the through hole of the metal pipe, so that the solder is hardly wet. 2. The semiconductor pressure sensor according to claim 1, wherein the Ni plating is exposed.
段部を形成し、該段部に収まる鍔部を有し管部が金属パ
イプの貫通孔に収まる補助パイプを設け、該補助パイプ
の鍔部の少なくとも上面は半田が濡れ難い金属で形成す
るようにしたことを特徴とする請求項１記載の半導体圧
力センサ。5. An auxiliary pipe having a step formed in the vicinity of an opening of a through-hole of the metal pipe, a flange having a flange that fits in the step, and a pipe part fitting in the through-hole of the metal pipe. 2. The semiconductor pressure sensor according to claim 1, wherein at least the upper surface of said flange is formed of a metal to which solder is hardly wetted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33749098A JP4123607B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33749098A JP4123607B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000162070A true JP2000162070A (en) | 2000-06-16 |
| JP4123607B2 JP4123607B2 (en) | 2008-07-23 |
Family
ID=18309150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33749098A Expired - Fee Related JP4123607B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4123607B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006266818A (en) * | 2005-03-23 | 2006-10-05 | Fuji Electric Device Technology Co Ltd | Pressure sensor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06224643A (en) * | 1993-01-25 | 1994-08-12 | Nec Corp | Phase modulator |
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|---|---|---|---|---|
| JPS54161069A (en) * | 1978-06-12 | 1979-12-20 | Fujitsu Ltd | Antiifluidization method of solder |
| JPH02248827A (en) * | 1989-03-22 | 1990-10-04 | Nec Kansai Ltd | Airtight terminal for pressure sensor and manufacture thereof |
| JPH0669373A (en) * | 1992-08-20 | 1994-03-11 | Ngk Spark Plug Co Ltd | Wiring board and its manufacture |
| JPH09199622A (en) * | 1996-01-18 | 1997-07-31 | Ngk Spark Plug Co Ltd | Metal lid substrate for electronic part package, metal lid, and its manufacturing method |
| JPH10160604A (en) * | 1996-11-27 | 1998-06-19 | Matsushita Electric Works Ltd | Pressure sensor |
-
1998
- 1998-11-27 JP JP33749098A patent/JP4123607B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54161069A (en) * | 1978-06-12 | 1979-12-20 | Fujitsu Ltd | Antiifluidization method of solder |
| JPH02248827A (en) * | 1989-03-22 | 1990-10-04 | Nec Kansai Ltd | Airtight terminal for pressure sensor and manufacture thereof |
| JPH0669373A (en) * | 1992-08-20 | 1994-03-11 | Ngk Spark Plug Co Ltd | Wiring board and its manufacture |
| JPH09199622A (en) * | 1996-01-18 | 1997-07-31 | Ngk Spark Plug Co Ltd | Metal lid substrate for electronic part package, metal lid, and its manufacturing method |
| JPH10160604A (en) * | 1996-11-27 | 1998-06-19 | Matsushita Electric Works Ltd | Pressure sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006266818A (en) * | 2005-03-23 | 2006-10-05 | Fuji Electric Device Technology Co Ltd | Pressure sensor device |
| KR101236678B1 (en) | 2005-03-23 | 2013-02-22 | 후지 덴키 가부시키가이샤 | Pressure sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4123607B2 (en) | 2008-07-23 |
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