JPH1154538A - Manufacture of coated bonding wire - Google Patents

Manufacture of coated bonding wire

Info

Publication number
JPH1154538A
JPH1154538A JP20886197A JP20886197A JPH1154538A JP H1154538 A JPH1154538 A JP H1154538A JP 20886197 A JP20886197 A JP 20886197A JP 20886197 A JP20886197 A JP 20886197A JP H1154538 A JPH1154538 A JP H1154538A
Authority
JP
Japan
Prior art keywords
bonding wire
coating
wire
resin solution
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20886197A
Other languages
Japanese (ja)
Other versions
JP3634122B2 (en
Inventor
Yutaka Kato
豊 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP20886197A priority Critical patent/JP3634122B2/en
Publication of JPH1154538A publication Critical patent/JPH1154538A/en
Application granted granted Critical
Publication of JP3634122B2 publication Critical patent/JP3634122B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Wire Bonding (AREA)
  • Processes Specially Adapted For Manufacturing Cables (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an insulating coat forming method, which can form the insulating film having the uniform thickness on the surface of a bonding wire. SOLUTION: In a manufacturing method of a coated bonding wire used for the electrode connection of a semiconductor device, coating material for coating the bonding wire is made to be micro liquid droplet. Thereafter, the material is attached to the surface of the bonding wire by the method of spraying, ultrasonic waves or the like. Thereafter, the attached coating material is fixed, and the film is formed. Thus, the insulating film with less thickness dispersion can be formed on the surface of the bonding wire.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子の電極
と外部リードとの結線に用いられる被覆ボンデイングワ
イヤーの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a covered bonding wire used for connecting an electrode of a semiconductor device to an external lead.

【０００２】[0002]

【従来の技術】半導体素子の電極結線用として、金、
銅、アルミニウムまたはこれらの金属をベースとしたボ
ンデイングワイヤーが用いられている。2. Description of the Related Art For connecting electrodes of a semiconductor element, gold,
Bonding wires based on copper, aluminum or these metals have been used.

【０００３】近年、半導体素子の集積度が高くなるに従
い、ワイヤーの間隔が狭くなってきている。そこで、ワ
イヤー同士の接触やワイヤーと半導体素子の接触による
電気的短絡不良の発生を防止するため、ボンディングワ
イヤーの表面に厚みが0.1〜1μm程度の絶縁性有機物か
らなる被膜を形成した被覆ボンディングワイヤーが開発
されている。In recent years, as the degree of integration of semiconductor devices has increased, the distance between wires has become narrower. Therefore, in order to prevent the occurrence of electrical short-circuit failure due to contact between the wires or contact between the wire and the semiconductor element, a coated bonding wire having a thickness of about 0.1 to 1 μm made of an insulating organic material is formed on the surface of the bonding wire. Is being developed.

【０００４】ボンデイングワイヤーに有機物被膜を形成
する方法は、一般に、有機物を溶剤に溶かし、溶かした
溶液をフェルト材等に含ませ、その中にボンディングワ
イヤーを通して表面に有機物を塗布し、次にボンディン
グワイヤーを加熱処理して溶剤を揮発除去する事により
行われている。A method of forming an organic material film on a bonding wire generally involves dissolving the organic material in a solvent, including the dissolved solution in a felt material or the like, passing the organic material through a bonding wire, and then applying the organic material to the surface. Is carried out by heat treatment to volatilize and remove the solvent.

【０００５】しかしながら、上記の被膜形成方法では、
所望厚みの被膜を１回の処理で形成するためには、一度
に多量の溶液をワイヤーに付着させたり、溶液を高濃度
にしてワイヤーに塗布したりする必要があった。そのた
め被膜厚みがばらついて不規則な凹凸が発生したり、溶
剤蒸気による泡によって被膜に突起が発生するという問
題があった。[0005] However, in the above-mentioned film forming method,
In order to form a film having a desired thickness in one process, it was necessary to apply a large amount of solution to the wire at one time or to apply the solution to the wire with a high concentration. For this reason, there has been a problem that the thickness of the coating varies, irregular irregularities are generated, and projections are generated on the coating by bubbles due to the solvent vapor.

【０００６】上記問題のあるボンディングワイヤーでワ
イヤーボンディングすると、ボンディング時に被膜上に
発生した突起がキャピラリーに接触し、ワイヤーのルー
プ形状が乱れたり、被膜の厚くなった部分が半導体素子
の電極や外部リード等の外部電極と重なった場合に、ボ
ンディングワイヤーと外部電極との接合状態が悪くなっ
たり、キャピラリーにより泡が破壊され、その部分の被
膜が薄くなったり、ひどい場合には被膜が無くなってし
まい電気的絶縁性が失われてしまうという不具合があっ
た。[0006] When wire bonding is performed with a bonding wire having the above-mentioned problem, a projection formed on the coating at the time of bonding comes into contact with the capillary, and the loop shape of the wire is disturbed, or the thickened portion of the coating is formed on the electrode or external lead of the semiconductor element. When it overlaps with an external electrode, the bonding state between the bonding wire and the external electrode is deteriorated, bubbles are broken by the capillary, and the film at that part is thinned. There was a problem that the electrical insulation was lost.

【０００７】[0007]

【発明が解決しようとする課題】本発明は上記の問題点
を解決するためになされたもので、ボンディングワイヤ
ー表面に厚みばらつきの少ない絶縁性被膜を形成する方
法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for forming an insulating film having a small thickness variation on the surface of a bonding wire.

【０００８】[0008]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、ボンディングワイヤーを被覆するための
被覆材を微細液滴粒子状にした後にボンディングワイヤ
ー表面に付着させ、その後、付着した被覆材を固化させ
て被膜を形成する。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a method for forming a coating material for coating a bonding wire into fine droplet particles, and then attaching the coating material to the surface of the bonding wire. The coating material is solidified to form a coating.

【０００９】[0009]

【発明の実施の形態】本発明の被覆ワイヤーの製造方法
は、まず、被膜を形成する絶縁性有機物を微細液滴粒子
状にする。微細液滴粒子の作成方法は、電気絶縁性有機
物を加熱溶融したり、溶剤で溶かしたりして液状にし、
その後、スプレー、超音波などの公知の方法を用いて微
細液滴状にする。BEST MODE FOR CARRYING OUT THE INVENTION In the method of manufacturing a coated wire according to the present invention, first, an insulating organic substance forming a coating is formed into fine droplet particles. The method of producing fine droplet particles is to heat and melt the electrically insulating organic substance, or to dissolve it with a solvent to make it liquid,
Then, it is made into fine droplets using a known method such as spraying or ultrasonic waves.

【００１０】微細液滴粒子の大きさは所望の被膜厚みや
被膜状態により適宜選択できるが、大きすぎるとワイヤ
ーに衝突したときの衝撃によりワイヤーが曲がったり、
破断したりし、また、小さすぎると被覆処理回数を多く
する必要があるため、粒子径は線径以上から１０倍以下
が望ましい。[0010] The size of the fine droplet particles can be appropriately selected depending on the desired coating thickness and coating state. However, if the particle size is too large, the wire may bend due to the impact when colliding with the wire,
If the particles are broken or too small, the number of coating treatments must be increased. Therefore, the particle diameter is desirably not less than the wire diameter and not more than 10 times.

【００１１】また、良好な膜厚分布を得るためには、粒
子径のバラツキは小さい方が良く、平均粒径の±50％以
内が望ましい。In order to obtain a good film thickness distribution, the variation in particle diameter is preferably small, and it is desirable that the average particle diameter is within ± 50%.

【００１２】次に、作成した微細液滴粒子をワイヤーに
付着させる。付着させる方法は、ワイヤー走行中に、微
細液滴粒子状にした被覆材を吹き付ける方法や、微細液
滴粒子に静電気をあたえ、電界中を通過させ微細液滴粒
子の移動方向およびスピードを調整してワイヤーに付着
させる方法がある。Next, the prepared fine droplet particles are attached to a wire. The method of attaching is to spray the coating material in the form of fine droplet particles while the wire is running, or to apply static electricity to the fine droplet particles, pass through an electric field and adjust the moving direction and speed of the fine droplet particles. There is a method of attaching to the wire.

【００１３】ワイヤーの断面は円形であるため、全体を
均一に被覆するには１方向からだけではなく、２方向以
上から吹き付けるのが望ましい。Since the cross section of the wire is circular, it is desirable to spray the wire not only from one direction but also from two or more directions in order to cover the whole uniformly.

【００１４】微細液滴粒子をボンディングワイヤーに付
着させた後は、ボンディングワイヤーが治具等に触れる
前に固化させ、本発明の被覆ボンディングワイヤーを作
成する。After the fine droplet particles are attached to the bonding wire, they are solidified before the bonding wire comes into contact with a jig or the like, thereby producing a coated bonding wire of the present invention.

【００１５】[0015]

【実施例】【Example】

（実施例１）粘度を2.0±0.5ポアズに調整した耐熱ポリ
ウレタン樹脂溶液を、市販のスプレーノズルを用いて、
微細液滴粒子径が平均で30μm±15μmとなるように圧力
調整をして、20m／minで鉛直方向に走行する30μmのボ
ンデイングワイヤーに相対する２方向から吹き付けた。(Example 1) A heat-resistant polyurethane resin solution whose viscosity was adjusted to 2.0 ± 0.5 poise was sprayed using a commercially available spray nozzle.
The pressure was adjusted so that the particle diameter of the fine droplets was 30 μm ± 15 μm on average, and sprayed from two directions facing a 30 μm bonding wire running in the vertical direction at 20 m / min.

【００１６】このとき、樹脂溶液の吹き出し量は、１ノ
ズルあたり8cc／minであった。 ワイヤーに付着しなか
った樹脂溶液の液滴は装置の下にあるタンクに回収され
て再利用した。At this time, the blowing amount of the resin solution was 8 cc / min per nozzle. Drops of the resin solution that did not adhere to the wire were collected in a tank below the apparatus and reused.

【００１７】樹脂溶液が付着したボンディングワイヤー
はそのまま鉛直方向に設置された熱風炉中を走行させ、
300℃で3秒の乾燥処理をほどこした。The bonding wire to which the resin solution has adhered travels as it is in a hot blast stove installed in the vertical direction.
A drying treatment was performed at 300 ° C. for 3 seconds.

【００１８】以上の吹き付けと乾燥の工程を１5回繰り
返した後、形成された被膜の厚みを測定したところ、0.
6±0.1μmとなっておりバラツキは小さかった。 ま
た、泡やピンホールなどもない良好な被膜が得られた。After the above spraying and drying steps were repeated 15 times, the thickness of the formed film was measured.
It was 6 ± 0.1 μm and the variation was small. In addition, a good film without bubbles and pinholes was obtained.

【００１９】（実施例２）耐熱ポリウレタン樹脂溶液の
微細液滴粒子径を平均で90μm±30μmとし、実施例１と
同様にボンディングワイヤーに吹き付けた。(Example 2) The particle diameter of fine droplets of the heat-resistant polyurethane resin solution was adjusted to 90 μm ± 30 μm on average, and sprayed onto a bonding wire in the same manner as in Example 1.

【００２０】このとき、樹脂溶液の吹き出し量は、１ノ
ズルあたり12cc／minであった。At this time, the blowing amount of the resin solution was 12 cc / min per nozzle.

【００２１】その後、実施例１と同じ条件で、吹き付け
と乾燥の工程を１0回繰り返した後、形成された被膜の
厚みを測定したところ、0.8±0.1μmとなっておりバラ
ツキは小さかった。また、泡やピンホールなどもない良
好な被膜が得られた。Thereafter, the steps of spraying and drying were repeated 10 times under the same conditions as in Example 1, and the thickness of the formed film was measured. The result was 0.8 ± 0.1 μm, and the dispersion was small. In addition, a good film without bubbles and pinholes was obtained.

【００２２】（実施例３）耐熱ポリウレタン樹脂溶液の
微細液滴粒子径を平均で150μm±40μmとし、実施例１
と同様にボンディングワイヤーに吹き付けた。(Example 3) Example 1 was conducted by setting the average particle diameter of fine droplets of the heat-resistant polyurethane resin solution to 150 µm ± 40 µm.
Was sprayed on the bonding wire in the same manner as described above.

【００２３】このとき、樹脂溶液の吹き出し量は、１ノ
ズルあたり15cc／minであった。At this time, the blowing amount of the resin solution was 15 cc / min per nozzle.

【００２４】吹き付けと乾燥の工程を9回繰り返した
後、形成された被膜の厚みを測定したところ、1.0±0.1
μmとなっておりバラツキは小さかった。 また、泡や
ピンホールなどもない良好な被膜が得られた。After repeating the spraying and drying steps 9 times, the thickness of the formed film was measured to be 1.0 ± 0.1.
μm and the variation was small. In addition, a good film without bubbles and pinholes was obtained.

【００２５】（実施例４）耐熱ポリウレタン樹脂溶液の
微細液滴粒子径を平均で210μm±50μmとし、実施例１
と同様にボンディングワイヤーに吹き付けた。(Example 4) The average particle diameter of the fine droplets of the heat-resistant polyurethane resin solution was set to 210 μm ± 50 μm on average.
Was sprayed on the bonding wire in the same manner as described above.

【００２６】このとき、樹脂溶液の吹き出し量は、１ノ
ズルあたり18cc／minであった。At this time, the blowing amount of the resin solution was 18 cc / min per nozzle.

【００２７】吹き付けと乾燥の工程を8回繰り返した
後、形成された被膜の厚みを測定したところ、1.0±0.1
μmとなっておりバラツキは小さかった。 また、泡や
ピンホールなどもない良好な被膜が得られた。After the spraying and drying steps were repeated eight times, the thickness of the formed film was measured to be 1.0 ± 0.1.
μm and the variation was small. In addition, a good film without bubbles and pinholes was obtained.

【００２８】（実施例５）耐熱ポリウレタン樹脂溶液の
微細液滴粒子径を平均で270μm±60μmとし、実施例１
と同様にボンディングワイヤーに吹き付けた。(Example 5) The average particle diameter of fine droplets of a heat-resistant polyurethane resin solution was set to 270 µm ± 60 µm, and
Was sprayed on the bonding wire in the same manner as described above.

【００２９】このとき、樹脂溶液の吹き出し量は、１ノ
ズルあたり20cc/minであった。At this time, the blowing amount of the resin solution was 20 cc / min per nozzle.

【００３０】吹き付けと乾燥の工程を7回繰り返した
後、形成された被膜の厚みを測定したところ、1.0±0.2
μmとなっておりバラツキは小さかった。 また、泡や
ピンホールなどもない良好な被膜が得られた。After repeating the spraying and drying steps seven times, the thickness of the formed film was measured to be 1.0 ± 0.2.
μm and the variation was small. In addition, a good film without bubbles and pinholes was obtained.

【００３１】（比較例１）実施例１と同じ樹脂溶液を２
枚合わせのフェルト板に5cc/minで供給、浸透させ、そ
の２枚のフェルト板の間を30μmのボンデイングワイヤ
ーを10m/minのスピードで水平に走行させて樹脂溶液を
塗布した。フェルト板からしみ出した余分の樹脂溶液は
装置の下部にあるタンクに回収され再利用した。Comparative Example 1 The same resin solution as in Example 1 was used
5 cc / min was supplied to and penetrated the combined felt plates, and a resin solution was applied by horizontally moving a 30 μm bonding wire at a speed of 10 m / min between the two felt plates. Excess resin solution exuded from the felt plate was collected in a tank at the bottom of the apparatus and reused.

【００３２】樹脂溶液を塗布されたボンディングワイヤ
ーはそのまま水平方向に設置された熱風炉中を走行さ
せ、300℃で６秒の乾燥処理を施した。The bonding wire coated with the resin solution was passed through a hot blast stove installed in a horizontal direction and dried at 300 ° C. for 6 seconds.

【００３３】以上の塗布と乾燥の工程を１６回繰り返し
た後、形成された被膜の厚みを測定したところ、1.0μm
±0.4μmとばらついていた。 被膜にはピンホールなど
はなかったが、フェルトの繊維の断片が少量付着してい
た。After the above coating and drying steps were repeated 16 times, the thickness of the formed film was measured to be 1.0 μm
± 0.4 μm. There were no pinholes in the coating, but a small amount of felt fiber fragments adhered.

【００３４】（比較例２）耐熱ポリウレタン樹脂溶液の
微細液滴粒子径を平均で330μm±60μmとし、実施例１
と同様にボンディングワイヤーに吹き付けた。(Comparative Example 2) The average particle diameter of the fine droplets of the heat-resistant polyurethane resin solution was set to 330 μm ± 60 μm on average.
Was sprayed on the bonding wire in the same manner as described above.

【００３５】吹き付け中にボンディングワイヤーの屈曲
が多発し、良好な被覆ボンディングワイヤーを作成する
ことができなかった。The bending of the bonding wire occurred frequently during spraying, and it was not possible to produce a good coated bonding wire.

【００３６】[0036]

【発明の効果】以上述べたように、本発明によれば、被
覆材を微細液滴粒子状にしてボンデイングワイヤーに付
着させ、その後固化させる方法により、被膜厚みばらつ
きの少ない被覆ボンデイングワイヤーを能率よく安価に
製造できるようになる。As described above, according to the present invention, a coating material having a small thickness variation can be efficiently produced by a method in which the coating material is formed into fine droplet particles and adhered to the bonding wire and then solidified. It can be manufactured at low cost.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 半導体素子の電極結線に用いられる被覆
ボンデイングワイヤーの製造方法において、ボンディン
グワイヤーを被覆するための被覆材を微細微細液滴粒子
状にし、ボンディングワイヤー表面に付着させ、その後
付着した被覆材を固化させて被膜を形成することを特徴
とする被覆ボンディングワイヤーの製造方法。In a method of manufacturing a coated bonding wire used for electrode connection of a semiconductor element, a coating material for coating a bonding wire is formed into fine and fine droplet particles, and is attached to the surface of the bonding wire. A method for producing a coated bonding wire, comprising solidifying a material to form a coating. 【請求項２】 微細液滴粒子径がボンディングワイヤー
径の1倍以上１０倍以下であることを特徴とする請求項
１記載の被覆ボンディングワイヤーの製造方法。2. The method for producing a coated bonding wire according to claim 1, wherein the diameter of the fine droplets is 1 to 10 times the diameter of the bonding wire.
JP20886197A 1997-08-04 1997-08-04 Method for manufacturing coated bonding wire Expired - Fee Related JP3634122B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20886197A JP3634122B2 (en) 1997-08-04 1997-08-04 Method for manufacturing coated bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20886197A JP3634122B2 (en) 1997-08-04 1997-08-04 Method for manufacturing coated bonding wire

Publications (2)

Publication Number Publication Date
JPH1154538A true JPH1154538A (en) 1999-02-26
JP3634122B2 JP3634122B2 (en) 2005-03-30

Family

ID=16563341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20886197A Expired - Fee Related JP3634122B2 (en) 1997-08-04 1997-08-04 Method for manufacturing coated bonding wire

Country Status (1)

Country Link
JP (1) JP3634122B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129006A1 (en) * 2001-06-15 2003-01-02 Conti Temic Microelectronic Electronic module e.g. for motor vehicle controls, has part of bonding links formed by bonding wire provided with insulating layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129006A1 (en) * 2001-06-15 2003-01-02 Conti Temic Microelectronic Electronic module e.g. for motor vehicle controls, has part of bonding links formed by bonding wire provided with insulating layer
DE10129006B4 (en) * 2001-06-15 2009-07-30 Conti Temic Microelectronic Gmbh Electronic module

Also Published As

Publication number Publication date
JP3634122B2 (en) 2005-03-30

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