JPH1147700A - Method for washing substrate - Google Patents

Method for washing substrate

Info

Publication number
JPH1147700A
JPH1147700A JP9203661A JP20366197A JPH1147700A JP H1147700 A JPH1147700 A JP H1147700A JP 9203661 A JP9203661 A JP 9203661A JP 20366197 A JP20366197 A JP 20366197A JP H1147700 A JPH1147700 A JP H1147700A
Authority
JP
Japan
Prior art keywords
cleaning
substrate
peripheral portion
outer peripheral
radial direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9203661A
Other languages
Japanese (ja)
Inventor
Kazuhisa Ogasawara
和久 小笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9203661A priority Critical patent/JPH1147700A/en
Publication of JPH1147700A publication Critical patent/JPH1147700A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make a washing time as short as possible even when the size of the substrate increases. SOLUTION: This method consists in changing the moving speed V in a radial direction of a washing implement in such a manner that the speed is slower linearly in the outer peripheral part than the inner peripheral part between the inner peripheral part (inner peripheral end) which is the central side of rotation and the outer peripheral part (outer peripheral end) at the time of washing the substrate while rotating the substrate and while moving the washing means in the radial direction. Since the moving speed of the washing implement is changed according to the peripheral speed of the substrate, the washing time is shortened.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶、半導体など
のデバイス製造工程における基板の洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a substrate in a process for manufacturing a device such as a liquid crystal or a semiconductor.

【0002】[0002]

【従来の技術】通常、液晶、半導体などのデバイス製造
工程において、基板は洗浄装置により洗浄されている。
2. Description of the Related Art Usually, in the process of manufacturing devices such as liquid crystals and semiconductors, a substrate is cleaned by a cleaning apparatus.

【0003】従来、この洗浄装置は、図4に示すよう
に、円筒状のケーシング1内に、回転台2が配置される
とともに、この回転台2の上面に、基板Wを保持するた
めの保持具3が複数個設けられ、さらにケーシング1の
側部には、回転台2上に保持された基板Wを洗浄するた
めの洗浄手段4が、回転される基板Wの回転中心側であ
る内周部と外周部との間において、その半径方向に沿っ
てほぼ横切るように揺動自在(矢印aにて示す)に設け
られている。
Conventionally, as shown in FIG. 4, a rotary table 2 is disposed in a cylindrical casing 1 and a holding table for holding a substrate W on the upper surface of the rotary table 2 as shown in FIG. A plurality of tools 3 are provided, and a cleaning unit 4 for cleaning the substrate W held on the turntable 2 is provided on a side portion of the casing 1 at an inner periphery which is a rotation center side of the substrate W to be rotated. It is provided so as to be swingable (indicated by an arrow a) so as to cross substantially along the radial direction between the portion and the outer peripheral portion.

【0004】また、上記洗浄手段4は、ケーシング1に
沿って設けられた支柱部11と、この支柱部11の上部
に水平面内で揺動自在に設けられたアーム部12と、こ
のアーム部12の先端部に設けられた洗浄具(例えば、
洗浄ブラシ、高圧水噴霧ノズル、高周波印加部などが使
用される)13とから構成されている。
The washing means 4 includes a support 11 provided along the casing 1, an arm 12 provided on the support 11 so as to be swingable in a horizontal plane, and an arm 12 Cleaning tool provided at the tip of (for example,
A cleaning brush, a high-pressure water spray nozzle, a high-frequency application unit, and the like are used).

【0005】上記構成において、基板Wを洗浄する場
合、まず基板Wを保持具3により回転台2上に保持させ
て回転台2を回転させる。次に、アーム部12を回転台
2のほぼ半径方向に沿って等速度でもって揺動させなが
ら、洗浄具13を作動させて、基板Wの表面の洗浄を行
う。
In the above configuration, when cleaning the substrate W, first, the substrate W is held on the turntable 2 by the holder 3 and the turntable 2 is rotated. Next, the cleaning tool 13 is operated to clean the surface of the substrate W while swinging the arm unit 12 at a constant speed substantially in the radial direction of the turntable 2.

【0006】[0006]

【発明が解決しようとする課題】ところで、上述した従
来の洗浄方法によると、洗浄具13は、基板Wの回転半
径上を等速度で移動(揺動)されるため、基板Wが大き
くなるにしたがって、回転中心から離れた外周部の洗浄
度合いが粗くなり、すなわち基板Wの外周部を確実に洗
浄することができなくなってしまう。
According to the conventional cleaning method described above, the cleaning tool 13 is moved (oscillated) at a constant speed on the rotation radius of the substrate W. Therefore, the degree of cleaning of the outer peripheral portion distant from the rotation center becomes coarse, that is, the outer peripheral portion of the substrate W cannot be reliably cleaned.

【0007】このため、外周部を確実に洗浄しようとす
ると、洗浄具13の移動速度(揺動速度)を遅くする必
要が生じるが、洗浄具13をその半径方向で一律的に遅
く移動させた場合、基板W一枚当たりの洗浄時間が長く
なってしまうという問題がある。
For this reason, in order to surely clean the outer peripheral portion, it is necessary to reduce the moving speed (oscillation speed) of the cleaning tool 13, but the cleaning tool 13 is uniformly moved slowly in the radial direction. In such a case, there is a problem that the cleaning time per one substrate W becomes long.

【0008】そこで、本発明は、基板が大型化(大版
化)した場合でも、洗浄時間をできるだけ短くし得る基
板の洗浄方法を提供することを目的とする。
Accordingly, an object of the present invention is to provide a method for cleaning a substrate which can minimize the cleaning time even when the substrate is enlarged (larger size).

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
に、本発明の洗浄方法は、基板を回転させながらかつ洗
浄手段を半径方向で移動させながら基板を洗浄させる際
に、洗浄手段の半径方向での移動速度を、回転中心側で
ある内周部と外周部との間で直線的または段階的にかつ
内周部より外周部の方が遅くなるように変化させる方法
である。
In order to solve the above-mentioned problems, a cleaning method according to the present invention provides a method for cleaning a substrate while rotating the substrate and moving the cleaning means in a radial direction. In this method, the moving speed in the direction is changed linearly or stepwise between the inner peripheral portion and the outer peripheral portion on the rotation center side so that the outer peripheral portion is slower than the inner peripheral portion.

【0010】上記洗浄方法によると、洗浄手段の移動速
度を、基板の周速度に応じて変化させたので、洗浄時間
の短縮化を図ることができる。
According to the above-mentioned cleaning method, the moving speed of the cleaning means is changed according to the peripheral speed of the substrate, so that the cleaning time can be reduced.

【0011】[0011]

【発明の実施の形態】本発明の請求項1に係る基板の洗
浄方法は、基板を回転させながらかつ洗浄手段を半径方
向で移動させながら基板を洗浄させる際に、洗浄手段の
半径方向での移動速度を、回転中心側である内周部と外
周部との間で直線的にかつ内周部より外周部の方が遅く
なるように変化させる方法である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS According to a first aspect of the present invention, there is provided a method of cleaning a substrate, the method comprising: cleaning a substrate while rotating the substrate and moving the cleaning means in the radial direction; In this method, the moving speed is changed linearly between the inner peripheral portion and the outer peripheral portion on the rotation center side so that the outer peripheral portion is slower than the inner peripheral portion.

【0012】また、本発明の請求項2に係る基板の洗浄
方法は、基板を回転させながらかつ洗浄手段を半径方向
で移動させながら基板を洗浄させる際に、洗浄手段の半
径方向での移動速度を、回転中心側である内周部と外周
部との間で段階的にかつ内周部より外周部の方が遅くな
るように変化させる方法である。
According to a second aspect of the present invention, there is provided a method of cleaning a substrate, wherein the cleaning means is moved in a radial direction when the substrate is cleaned while rotating the substrate and moving the cleaning means in the radial direction. Is changed stepwise between the inner peripheral portion and the outer peripheral portion on the rotation center side so that the outer peripheral portion is slower than the inner peripheral portion.

【0013】上記各請求項に係る洗浄方法によると、洗
浄手段を、回転する基板のほぼ半径方向に沿って移動さ
せる際に、周速度が遅い内周部から周速度が早い外周部
にかけて、その移動速度を直線的または段階的に遅くさ
せたので、洗浄度合いを基板の全面にてほぼ一定にする
ことができ、したがって外周部の周速度に合わせて、洗
浄具の移動速度を、半径方向で一律に遅くする場合に比
べて、洗浄時間の短縮化を図ることができる。
According to the cleaning method of the present invention, when the cleaning means is moved substantially in the radial direction of the rotating substrate, the cleaning means extends from the inner peripheral portion having a lower peripheral speed to the outer peripheral portion having a higher peripheral speed. Since the moving speed is reduced linearly or stepwise, the degree of cleaning can be made substantially constant over the entire surface of the substrate. The cleaning time can be shortened as compared with the case where the delay is uniformly reduced.

【0014】以下、本発明の第1の実施の形態における
基板の洗浄方法を、図1および図2に基づき説明する。
なお、本発明の要旨は、基板の洗浄方法にあるため、基
板の洗浄装置については、従来例で説明したものと同じ
構成のものが使用され、したがって同一の部品に同一の
番号を符すとともに、その説明については省略する。
Hereinafter, a method for cleaning a substrate according to the first embodiment of the present invention will be described with reference to FIGS.
Since the gist of the present invention lies in a method of cleaning a substrate, a substrate cleaning apparatus having the same configuration as that described in the conventional example is used, and thus the same components are denoted by the same reference numerals. The description thereof is omitted.

【0015】図1は洗浄具の移動速度を示すグラフ、図
2は洗浄具の移動軌跡を示す要部平面図である。すなわ
ち、本第1の実施の形態における洗浄方法は、回転され
る基板Wの半径方向に沿って円弧状に移動(揺動)され
る洗浄手段における洗浄具13の移動速度を直線的に変
化させたものであり、またその変化は、基板Wの回転中
心側である内周部よりも外周部の方が遅くなるようにし
たものである。
FIG. 1 is a graph showing a moving speed of the cleaning tool, and FIG. 2 is a plan view of a main part showing a moving locus of the cleaning tool. That is, the cleaning method according to the first embodiment linearly changes the moving speed of the cleaning tool 13 in the cleaning unit that moves (oscillates) in an arc along the radial direction of the substrate W to be rotated. The change is such that the outer peripheral portion is slower than the inner peripheral portion on the rotation center side of the substrate W.

【0016】上記洗浄具13の移動速度Vを式で表すと
下記式のようになり、またグラフに示すと、図1のよ
うになる。 V=−A×r+B・・・ 式中、rは洗浄具13の基板Wの回転中心からの移動
距離(位置)を示しており、またAおよびBは定数であ
る。
The moving speed V of the cleaning tool 13 is expressed by the following equation, and is shown in FIG. 1 by a graph. V = −A × r + B In the formula, r indicates a moving distance (position) of the cleaning tool 13 from the rotation center of the substrate W, and A and B are constants.

【0017】ここで、上記式の誘導について説明す
る。上記式を導くにあたり、その基本とする考え方
は、基板Wのいずれの領域においても洗浄確率を一定に
することであり、このようにすることにより、基板Wの
面積の増加に関係なく、基板Wの内周部および外周部に
おける洗浄の度合いの平滑化を図ることができる。
Here, the derivation of the above equation will be described. In deriving the above equation, the basic idea is to keep the cleaning probability constant in any region of the substrate W. By doing so, the substrate W The degree of cleaning at the inner peripheral portion and the outer peripheral portion can be smoothed.

【0018】図2に示すように、基板W上のある領域S
n(図2においては、n=1〜3を示す)の洗浄確率を
xとすると、xは下記の式により表される。 x≒d×ln/Sn・・・ 上記式中、lnは領域Sn内における洗浄具13の移動
距離(直線近似値)で、dは洗浄具の噴霧水のノズル径
すなわち洗浄幅を示す。なお、洗浄具13の実際の軌跡
は、太線(L)にて示す。
As shown in FIG. 2, a certain region S on the substrate W
Assuming that the cleaning probability of n (n = 1 to 3 in FIG. 2) is x, x is represented by the following equation. During x ≒ d × l n / S n ··· above formulas, l n is the moving distance of the cleaner 13 (the linear approximation) in the region S n, d is the nozzle diameter of the spray water cleaning device i.e. cleaning width Is shown. The actual trajectory of the cleaning tool 13 is indicated by a thick line (L).

【0019】上記式を、基板Wの回転角度(Δθ)、
洗浄具13の移動時間(Δt)および洗浄具13の半径
方向での移動距離(r)を用いて変形すると、下記式
のようになる。
The above equation is obtained by calculating the rotation angle (Δθ) of the substrate W,
The following equation is obtained by using the moving time (Δt) of the cleaning tool 13 and the moving distance (r) of the cleaning tool 13 in the radial direction.

【0020】[0020]

【数1】 (Equation 1)

【0021】上記式において、xが一定であることか
ら、x=k(定数)とおくと、下記のように変形するこ
とができる。
In the above equation, since x is constant, if x = k (constant), it can be modified as follows.

【0022】[0022]

【数2】 (Equation 2)

【0023】このように、洗浄具13を、回転する基板
Wのほぼ半径方向に沿って移動させる際に、周速度が遅
い内周部(内周端)から周速度が早い外周部(外周端)
にかけて、その移動速度が直線的に遅くなるようにした
ので、洗浄の度合いを基板Wの全面にてほぼ一定にする
ことができ、したがって外周部の洗浄を確実に行うため
に、半径方向で一律に洗浄具13の移動速度を遅くする
場合に比べて、洗浄時間の短縮化を図ることができる。
As described above, when the cleaning tool 13 is moved substantially in the radial direction of the rotating substrate W, the inner peripheral portion (the inner peripheral end) having the lower peripheral speed is moved to the outer peripheral portion (the outer peripheral end) having the faster peripheral speed. )
, The moving speed is linearly reduced, so that the degree of cleaning can be made substantially constant over the entire surface of the substrate W. Therefore, in order to reliably clean the outer peripheral portion, the cleaning is performed uniformly in the radial direction. As compared with the case where the moving speed of the cleaning tool 13 is reduced, the cleaning time can be reduced.

【0024】次に、本発明の第2の実施の形態における
基板の洗浄方法を、図3に基づき説明する。図3は洗浄
具の移動速度を示すグラフである。
Next, a method of cleaning a substrate according to a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a graph showing the moving speed of the cleaning tool.

【0025】上記第1の実施の形態の洗浄方法は、洗浄
具13の半径方向での移動速度を、直線的に変化させた
が、本第2の実施の形態における洗浄方法においては、
図3に示すように、洗浄具13の移動速度Vを、内周部
(内周端)から外周部(外周端)に向かって、段階的
(階段状)に、順次、遅くさせたものである。
In the cleaning method of the first embodiment, the moving speed of the cleaning tool 13 in the radial direction is changed linearly. However, in the cleaning method of the second embodiment,
As shown in FIG. 3, the moving speed V of the cleaning tool 13 is gradually decreased stepwise (stepwise) from the inner peripheral portion (inner peripheral end) to the outer peripheral portion (outer peripheral end). is there.

【0026】この洗浄方法においても、上記第1の実施
の形態と同様の効果が得られる。
In this cleaning method, the same effects as in the first embodiment can be obtained.

【0027】[0027]

【発明の効果】以上のように、本発明の各請求項に係る
基板の洗浄方法によると、洗浄手段を、回転する基板の
ほぼ半径方向に沿って移動させる際に、周速度が遅い内
周部から周速度が早い外周部にかけて、その移動速度を
直線的に遅くさせたので、洗浄度合いを基板の全面にて
ほぼ一定にすることができ、したがって外周部の速度に
合わせて、洗浄具の移動速度を一律的に遅くする場合に
比べて、洗浄時間の短縮化を図ることができる。
As described above, according to the method for cleaning a substrate according to the present invention, when the cleaning means is moved substantially in the radial direction of the rotating substrate, the inner peripheral portion having a low peripheral speed is used. Since the moving speed is linearly reduced from the portion to the outer peripheral portion where the peripheral speed is fast, the cleaning degree can be made substantially constant over the entire surface of the substrate, and therefore, the cleaning tool can be adjusted in accordance with the peripheral portion speed. The cleaning time can be reduced as compared with the case where the moving speed is uniformly reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態の洗浄方法における
洗浄具の移動距離と移動速度との関係を示すグラフであ
る。
FIG. 1 is a graph showing a relationship between a moving distance and a moving speed of a cleaning tool in a cleaning method according to a first embodiment of the present invention.

【図2】同第1の実施の形態の洗浄方法の原理を説明す
る図である。
FIG. 2 is a diagram illustrating the principle of the cleaning method according to the first embodiment.

【図3】本発明の第2の実施の形態の洗浄方法における
洗浄具の移動距離と移動速度との関係を示すグラフであ
る。
FIG. 3 is a graph showing a relationship between a moving distance and a moving speed of a cleaning tool in a cleaning method according to a second embodiment of the present invention.

【図4】従来例の洗浄装置における洗浄方法を説明する
斜視図である。
FIG. 4 is a perspective view illustrating a cleaning method in a conventional cleaning apparatus.

【符号の説明】[Explanation of symbols]

W 基板 4 洗浄手段 13 洗浄具 W substrate 4 Cleaning means 13 Cleaning tool

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板を回転させながらかつ洗浄手段を半径
方向で移動させながら基板を洗浄させる際に、洗浄手段
の半径方向での移動速度を、回転中心側である内周部と
外周部との間で直線的にかつ内周部より外周部の方が遅
くなるように変化させることを特徴とする基板の洗浄方
法。
When cleaning a substrate while rotating the substrate and moving the cleaning means in the radial direction, the moving speed of the cleaning means in the radial direction is controlled by the inner peripheral portion and the outer peripheral portion which are the rotation center side. Wherein the outer peripheral portion is changed so that the outer peripheral portion is slower than the inner peripheral portion.
【請求項2】基板を回転させながらかつ洗浄手段を半径
方向で移動させながら基板を洗浄させる際に、洗浄手段
の半径方向での移動速度を、回転中心側である内周部と
外周部との間で段階的にかつ内周部より外周部の方が遅
くなるように変化させることを特徴とする基板の洗浄方
法。
2. The cleaning method according to claim 1, wherein when the substrate is cleaned while rotating the substrate and moving the cleaning unit in the radial direction, the moving speed of the cleaning unit in the radial direction is changed between the inner peripheral portion and the outer peripheral portion on the rotation center side. Wherein the outer peripheral portion is changed stepwise so as to be slower than the inner peripheral portion.
JP9203661A 1997-07-30 1997-07-30 Method for washing substrate Pending JPH1147700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9203661A JPH1147700A (en) 1997-07-30 1997-07-30 Method for washing substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9203661A JPH1147700A (en) 1997-07-30 1997-07-30 Method for washing substrate

Publications (1)

Publication Number Publication Date
JPH1147700A true JPH1147700A (en) 1999-02-23

Family

ID=16477765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9203661A Pending JPH1147700A (en) 1997-07-30 1997-07-30 Method for washing substrate

Country Status (1)

Country Link
JP (1) JPH1147700A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181644A (en) * 2010-03-01 2011-09-15 Ebara Corp Method and apparatus for cleaning substrate
CN102825020A (en) * 2011-06-16 2012-12-19 株式会社荏原制作所 Substrate processing method and substrate processing unit
CN110571175A (en) * 2019-09-17 2019-12-13 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) Swing arm control method, device and system and wafer processing equipment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181644A (en) * 2010-03-01 2011-09-15 Ebara Corp Method and apparatus for cleaning substrate
CN102825020A (en) * 2011-06-16 2012-12-19 株式会社荏原制作所 Substrate processing method and substrate processing unit
US9165799B2 (en) 2011-06-16 2015-10-20 Ebara Corporation Substrate processing method and substrate processing unit
TWI596686B (en) * 2011-06-16 2017-08-21 荏原製作所股份有限公司 Substrate processing method
CN110571175A (en) * 2019-09-17 2019-12-13 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) Swing arm control method, device and system and wafer processing equipment

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