JPH113961A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device for an upper stage which can prevent its lead deformation when stack-mounted. SOLUTION: The semiconductor device has a package 14 and a plurality of leads 5 projected from the package 14. The device has such a long-leg structure that has a space under the package 14 in which a lower-stage semiconductor device can be positioned and that the leads can be extended downwards. In this case, the leads 5 are reinforced by reinforcing members 13. The reinforcing members 13 are formed simultaneously with formation of the package 14. The leads 5 are formed by etching a metallic foil applied onto an insulating film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to an international standard JEDEC (Joint).
Electron Device Engineering Council). O. DIMM (Small Out line Dual In-line Memo
ry Module) TCP (Tape Carrier)
The present invention relates to a technology which is effective when applied to a semiconductor device such as a semiconductor package and a method for manufacturing the same.

[0002]

2. Description of the Related Art As one of semiconductor devices (semiconductor integrated circuit devices), a TCP type semiconductor device is known. Also,
2. Description of the Related Art In order to improve the mounting efficiency of a semiconductor device, a structure (stack structure) in which TCP type semiconductor devices are mounted in a stacked manner (laminated mounting) is known.

[0003] For example, "GAIN" published by Semiconductor Division of Hitachi, Ltd., published on March 11, 1997, P19 and P20, describe a TCP stack module (laminated mounting module).

[0004] This document discloses a TCP stack module in which a TCP type semiconductor device is mounted on a front surface and a rear surface of a strip-shaped PCB (module substrate) in two layers in parallel. There are two types of TCP type semiconductor devices, TCP for upper stage and TCP for lower stage. Both types have a structure in which gull-wing type leads protrude from both sides of a rectangular elongated package.

The inner dimension of the lead row projecting from both sides of the package for the upper TCP is larger than the outer dimension of the lead row projecting from both sides of the package for the lower TCP, and the height of the lower surface of the package of the upper TCP is increased. Is higher than the height of the upper surface of the lower TCP package. As a result, the upper TCP can be stacked and mounted (stack mounted) so as to cover the lower TCP.

The entire TCP type semiconductor device is covered and protected by a metal case attached to a module substrate.

The above-mentioned TCP type semiconductor device has a 16 MDRA
M, 64M DRAM and the like.

On the other hand, in P104, “Nikkei Electronics” issued by Nikkei BP, August 2, 1993, bumps are provided at the four corners of the package body to prevent lead bending during transportation. package with bumpe
r) is described.

On the other hand, as one of the manufacturing techniques of a semiconductor device, a technique of manufacturing a resin-sealed semiconductor device using a lead frame in which a metal plate is patterned is known. The lead frame is made of, for example, a metal plate having a thickness of 0.1 mm or more.

The manufacturing process of a semiconductor device using a lead frame is described in "VLSI Packaging Technology (1)", published by Nikkei BP, May 15, 1993, P130-P1.
35. This document discloses an example of manufacturing a semiconductor device by attaching a semiconductor chip to a lead frame, performing wire bonding, molding, and then forming a lead protruding from a side surface of the package.

[0011]

Generally, the leads protruding from the side of the package are thin and narrow, and have low mechanical strength. Therefore, when handling the semiconductor device, if the lead comes into contact with another one, the lead is easily deformed.

Therefore, conventionally, as described in the above document, a structure is provided in which bumpers are provided at the four corners of a rectangular package and the leads are brought into contact with the bumpers before the leads come into contact with other objects when the semiconductor device is handled. Is being developed.

However, since this structure is not a structure in which the lead itself is reinforced, the lead is easily deformed when the lead comes into contact with another one.

On the other hand, in order to achieve high-density mounting of a memory module, a TCP stack module in which two semiconductor devices are stacked and mounted so as to be stacked is developed as described in the above-mentioned document.

In the TCP stack module, TCP
Type semiconductor devices are used. The lead of a TCP type semiconductor device is formed by etching a 35 μm thick copper foil attached to the surface of, for example, a 75 μm thick polyimide resin tape (film). Is weaker than a lead formed from a lead frame made of a metal plate. The semiconductor device having the bumper described in the above document is a lead formed from a lead frame. The thickness of the lead formed from the lead frame is, for example, 0.1 mm or more.

In the above-mentioned stack structure, the upper TC
The package height of the lead of P (upper semiconductor device) is increased because the lower TCP is mounted below the package. As a result, in the upper semiconductor device, the lead bend due to contact with other components becomes larger than in the case of a normal semiconductor device in which no semiconductor device is mounted below the package.

Therefore, in assembling the stack module, the bending of the lead of the upper TCP not only impairs the reliability of the mounting but also lowers the production yield.

An object of the present invention is to provide a semiconductor device capable of preventing lead deformation with a foot-height structure when a space is provided below a package, and a method of manufacturing the same.

It is another object of the present invention to provide a semiconductor device having a foot-height structure and a high lead deformation strength when a space is provided below the package, and a method of manufacturing the same.

Another object of the present invention is to provide a semiconductor device capable of improving the reliability of mounting and the yield.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0022]

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) It has a package and a plurality of leads projecting from the package, and the leads face downward so as to form a space under which the other semiconductor device can be located. In a semiconductor device having a long foot structure, the leads are reinforced by a reinforcing member. The reinforcing member is formed at the same time when the package is formed. The leads are formed by etching a metal foil attached to an insulating film.

Such a semiconductor device is manufactured by the following method.

A step of preparing an insulating film having a lead pattern formed on the surface; a step of fixing a semiconductor chip to the lead pattern via an electrode; and a step of cutting the lead and the insulating film at the outer peripheral portion of the lead pattern. Forming a semi-finished product semiconductor device in which leads protrude from the periphery of the insulating film, and forming leads of the semi-finished product semiconductor device and positioning another semiconductor device below the insulating film. Forming the leads so as to have a space for forming the semiconductor device, molding the semi-finished product semiconductor device, sealing the semiconductor chip, the insulating film, and the inner ends of the leads with a package made of resin, A step of providing a resin up to the upper surface side of the outer end side of the lead to reinforce the lead portion at the height of the foot.

(2) In the configuration of the means (1), the reinforcing member is formed of a resin fixed to the package.

(3) A step of preparing a lead frame made of a metal plate, a step of fixing a semiconductor chip to a predetermined portion of the lead frame, and a step of connecting electrodes of the semiconductor chip and inner ends of the leads with conductive wires. A connecting step, a step of covering an inner end portion of the semiconductor chip, the wire and the lead with a package made of resin, and a step of cutting and removing an unnecessary portion of the lead frame and forming a lead projecting from the package. A method of manufacturing a semiconductor device, comprising: forming a lead at a foot height so as to have a space where another semiconductor device can be located below the package during the lead molding, and thereafter impairing the spatial function. Without molding and reinforced the foot-lead portion protruding from the package with a resin body integral with the package. .

(4) A semiconductor device having a package, a plurality of leads projecting from a side surface of the package, and a bumper provided at a corner of the package and projecting as long as the leads. The lead has a long foot-height structure downward and has a space in which another semiconductor device can be located under the package.

According to the means (1), (a) in a semiconductor device having a foot-height lead structure having a space for placing another semiconductor device under the package, the foot-height portion of the lead is formed in the package. Since the reinforcement is made of a resin which is sometimes formed at the same time, the lead strength at the foot-high portion is strong, and the lead is hardly deformed. Therefore, mounting failure due to lead deformation during mounting does not occur, and mounting reliability is increased.

(B) A semiconductor device in which leads are formed by etching a metal foil attached to an insulating film (T)
In CP type semiconductor devices), the leads are thin and have low strength,
Since the leg portion of the lead is reinforced with the reinforcing member, the lead strength is improved, and the stack structure is stabilized.

According to the means (2), the reinforcing member for reinforcing the leg portion of the lead is made of a resin fixed to the package, so that the effect as the reinforcing member is further enhanced.

According to the means (3), even in a semiconductor device manufactured using a lead frame made of a metal plate, the lead is molded again after the lead is formed, and the foot portion of the lead is reinforced with resin. Reinforcement of the lead foot high portion can be achieved.

According to the means (4), since the bumper provided at the corner of the package easily comes in contact with the other one which comes into contact with the lead first, there is little danger that an external force is applied to the lead, and the height of the foot is reduced. Lead deformation can be prevented.

[0034]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) FIGS. 1 to 6 relate to a semiconductor device according to Embodiment 1 of the present invention. FIG. 1 is a cross-sectional view showing a semiconductor device of the first embodiment, and FIG. 2 is a plan view of the semiconductor device.

In the first embodiment, an example in which the present invention is applied to a TCP type semiconductor device manufactured by using a tape carrier in which leads are formed by etching a metal foil attached to the surface of an insulating film will be described. . The manufacturing technology of the TCP type semiconductor device is that TAB (Ta
It is also referred to as pe Automated Bonding technology.

As shown in FIGS. 1 and 2, a semiconductor device (TCP semiconductor device) 1 of the first embodiment is formed of a flexible insulating film having a hole (device hole) 2 in the center. It has a rectangular frame-shaped lead support 3.
The device hole 2 is larger than the size of the semiconductor chip by 1
The hole becomes a large hole of about several mm to several mm, which is an area where the semiconductor chip 4 is arranged. The insulating film has, for example, a thickness of 7
5 μm polyimide resin is used.

A plurality of leads 5 are formed on the lower surface of the lead support 2 respectively. The lead 5 is formed by etching a metal foil attached to one surface of an insulating film via an adhesive 6.

The inner ends of the leads 5 project into the device holes 2 and are connected to the electrodes 7 of the semiconductor chip 4.

The lead portion protruding from the outer periphery of the lead support 3 is formed in a gull wing shape.
The tips of the leads 5 extend horizontally to form flat joints 10 suitable for surface mounting. The gull-wing-type lead portion has a foot height structure 12 that is long downward as described below so as to form a space 11 in which another semiconductor device can be located below the insulating film, as described later. .

On the other hand, this is one of the features of the present invention.
A reinforcement 13 is formed on the upper surface side of the lead 5. The reinforcing member 13 is formed of a resin, and is formed integrally with a package 14 made of a resin provided on the lead supporting portion 3 and covering the periphery and the lower surface of the semiconductor chip 4. That is, the reinforcing member 13 is formed at the same time when the package 14 is formed by molding.

The mold is, for example, a transfer mold. Although not particularly limited, the upper surface of the package 14 and the upper surface of the reinforcing member 13 are formed to be flush with each other. Since the reinforcing member 13 is formed by transfer molding using a mold, the lead 5 is covered by the reinforcing member 13 except for the lower surface side. When the tip of the flat joint 10 of the lead 5 is sandwiched by a mold during the transfer molding, the reinforcing body 13 is not formed on the upper surface as shown in FIG.

The TCP type semiconductor device 1 of the first embodiment is
The gull-wing-type lead 5 is extended to the lower side so that another semiconductor device can be located in the space 11 below the package 14. Since the portion is covered and reinforced by the reinforcing member 13 formed at the same time as the package 14 from above, it is difficult for external force to act on the portion, and the portion is not bent.

Next, the manufacture of the TCP semiconductor device 1 according to the first embodiment will be described with reference to FIGS. FIG. 3 is a plan view of a tape carrier used for manufacturing the semiconductor device, FIG. 4 is a plan view showing a semi-finished semiconductor device cut and separated from the tape carrier, and FIG. 5 is a cross-section showing a state in which the semi-finished semiconductor device is molded. FIG.

In the manufacture of the TCP type semiconductor device 1,
A tape carrier 20 as shown in FIG. 3 is prepared.

The tape carrier 20 has a structure in which unit lead patterns 22 are repeatedly formed in the longitudinal direction of the tape carrier 20 on the surface of a flexible insulating film (insulating tape) 21 having a fixed width. The lead pattern 22 is formed by etching a metal foil attached to the insulating tape 21.

The insulating tape 21 has a thickness of, for example, 7
The metal foil is made of a polyimide resin having a thickness of 5 μm, and the metal foil is made of, for example, a copper foil having a thickness of 35 μm. Therefore, the lead thickness of the lead pattern 22 is also 35 μm.

On both sides of the insulating tape 21, perforation holes 23 used for moving the tape carrier 20 are provided at regular intervals.

In the area where the lead pattern 22 is formed, a rectangular hole (device hole) 2 is provided at the center. The device hole 2 is a hole that is about 1 to several mm larger than the size of the semiconductor chip, and is an area where the semiconductor chip is arranged.

On the outer side of each side of the device hole 2, there is provided a long hole 24 which is apart from each side of the device hole 2 by a predetermined distance and extends in parallel with each side. At the ends of the elongated holes 24 which are orthogonal to each other, a thin hanging portion 25 is formed which connects the insulating film area between the elongated holes 24 and the device holes 2 and the insulating film area outside the elongated holes 24. Will be. Therefore, the rectangular frame-shaped lead support 3 is formed so as to surround the device hole 2.

On the other hand, a plurality of leads 5 of the lead pattern 22 are formed in groups on each side of the device hole 2. The lead 5 extends from the device hole 2 beyond the elongated hole 24 outside the device hole 2 to the portion of the insulating film 21 outside the elongated hole 24. One end (inner end: inner lead end) of the lead 5 is inserted into the device hole 2 by one.
mm, and the tip is connected to an electrode (bump electrode) of a semiconductor chip. The lead 5 extends in parallel with the edge portion of the device hole 2 and the portion (outer lead) extending beyond the elongated hole 24.

For such a tape carrier 20,
As shown in FIG. 4, the semiconductor chip 4 is fixed by face-down bonding. The inner lead end of the lead 5 is fixed to the electrode 7 of the semiconductor chip 4.

The semi-finished product semiconductor device 26 is formed by cutting the boundary between the lead supporting portion 3 and the hanging portion 25 and cutting the portion of the lead 5 crossing the elongated hole 24.

Further, a portion of the lead 5 (outer lead portion) protruding from the lead supporting portion 3 of the semi-finished product semiconductor device 26 is formed into a gull wing type (see FIG. 4). As shown in FIGS. 1 and 5, the lead 5 portion of the foot-height structure 12 is elongated so as to have a space below the lead support portion 3 where another semiconductor device can be located.

Next, the semi-finished product semiconductor device 26 for which lead molding has been completed is molded by a transfer molding device. FIG. 5 is a cross-sectional view showing the semi-finished product semiconductor device 26 clamped to the mold 29. The molding die 29 includes a lower die 27 and an upper die 28, and has a die structure in which a cavity 30 is formed on the upper surface side of the lead 5 when the semi-finished product semiconductor device 26 is clamped.

The upper mold 28 is provided with a sub-runner 31 communicating with the cavity 30 and an air vent 32. The communication part between the sub-runner 31 and the cavity 30 becomes the gate 33.

The melted resin 34 is supplied to the sub-runner 31,
The air flows into the cavity 30 through the air vent 32.
The extruded air escapes from the air vent 32 to the outside. Since the lower mold 27 supports the lower surface of the lead 5,
The resin 34 is filled in the upper surface and the side surface of the lead 5. Further, since the upper surface of the semiconductor chip 4 comes into contact with the ceiling surface of the cavity 30 of the upper mold 28, the upper surface of the semiconductor chip 4 is exposed from the surface of the package 14 formed by curing the resin.

The ceiling surface of the cavity 30 of the upper die 28 is flat, and extends from the region where the semiconductor chip 4 is located at the center of the cavity 30 to the foot-height structure 12 of the lead 5. In addition, since the side surface of the cavity 30 is inclined so that the lower part of the cavity 30 projects, the inclined foot height structure 12 and the flat joint 1
0 is covered with the resin 34 up to the vicinity of the leading end of the zero. After the resin has hardened, this portion constitutes a reinforcing body 13 for protecting and reinforcing the foot-height structure 12 of the lead 5 and the flat joint portion 10.

The predetermined space 1 is defined by the foot height structure 12.
1 can be formed, the semiconductor chip 4 or the lead support 3
The lower surface side of the lead portion to which is attached may also be sealed with resin. Further, the semiconductor chip 4 may be completely covered with a resin (package 14) in order to improve moisture resistance.

After curing the resin, the mold 29 is opened and unnecessary resin portions are removed, whereby the TCP type semiconductor device 1 as shown in FIG. 1 can be manufactured.

The TCP type semiconductor device 1 of the first embodiment is
It is mounted on the mounting board 20 as shown in FIG. FIG. 6 is a cross-sectional view illustrating a mounted state of the semiconductor device of the first embodiment.

As shown in FIG. 6, lands 41 connected to the wiring are formed on the surface of the mounting board 40. The land 41 is formed on the flat junction 1 of the TCP type semiconductor device 1.
It is arranged to correspond to 0.

In the TCP type semiconductor device 1, the flat joint 10 of the lead 5 is disposed so as to overlap the land 41, and is mounted on the lead or land 41 by reflow of solder plating formed in advance. 5
Is fixed to the land 41 by solder 42.

The mounting of the TCP type semiconductor device 1 creates a space 11 between the mounting substrate 40 and the lead supporting portion 3 in which other semiconductor devices and the like can be arranged.

In order to mount a semiconductor device 45 smaller than the TCP type semiconductor device 1 in a region of the mounting substrate 40 where the space 11 is formed, the mounting end 47 of the tip 46 of the lead 46 of the semiconductor device 45 is mounted. A land 48 is formed in advance.

In mounting, the semiconductor device 45 for projecting the lead 46 in a gull-wing shape from the periphery of the package 49 is positioned and mounted with respect to the land 48, and the TCP semiconductor device 1 is positioned with respect to the land 41. Then, the semiconductor device 45 and the TCP type semiconductor device 1 are mounted on the mounting substrate 2 by performing a solder reflow process.
No. 0 is mounted with solders 22 and 50.

At this time, in the TCP type semiconductor device 1, since the foot-height structure 12 of the lead 5 is protected and reinforced by the reinforcing member 13, no external force is directly applied to the foot-height structure 12 of the lead 5 from above. , Lead bending does not occur. As a result, the mounting yield and the mounting reliability of the upper semiconductor device (TCP semiconductor device 1) in the stacked mounting can be improved.

Further, as in the case of the conventional semiconductor device having a foot-height structure, the mounting operation can be performed without paying more attention than necessary to the foot-height structure of the lead during mounting. Time can also be reduced.

According to the first embodiment, the following effects can be obtained.

(1) In the TCP-type semiconductor device 1 having a foot-lead structure having a space 11 in which another semiconductor device 45 is located below the package 14, the foot-height structure 12 of the lead 5 forms the package 14. Since the reinforcement is made of the resin 13 formed at the same time, the lead is strong at the foot high portion, and the lead 5 is hardly deformed. Therefore, mounting failure due to lead deformation during mounting does not occur.

(2) According to the above (1), the lead deformation does not occur at the time of mounting.
0 and the land 41 are securely joined, and the mounting reliability is increased.

(3) According to the above (1), the lead deformation does not occur during mounting.
Since the operation can be performed without paying attention to the parts, the mounting operation can be performed smoothly and the mounting operation time can be reduced.

(4) In the TCP type semiconductor device 1 in which the lead 5 is formed by etching the metal foil attached to the insulating film, the lead 5 is thin and low in strength, but the leg 5 of the lead 5 has a high foot structure 12. Since the reinforcement is provided by the reinforcing member 13, the lead strength is improved, and the stack structure becomes stable.

(Embodiment 2) FIG. 7 shows Embodiment 2 of the present invention.
And FIG. 8 is a cross-sectional view showing a state in which a reinforcing member is formed in the semiconductor device.

In the second embodiment, the upper semiconductor device 60 comprises:
This is a resin-sealed semiconductor device manufactured using a lead frame. The upper semiconductor device 60 also has the space 5 in which the lead 5 has the foot-height structure 12 and another semiconductor device 45 can be located below the package 14.

FIG. 7 is a sectional view showing a mounting state of the upper semiconductor device 60.

In manufacturing the upper semiconductor device 60 of the second embodiment, the semiconductor device is formed by a method of manufacturing a resin-encapsulated semiconductor device using a common lead frame, but the leads 5 protruding from the package 14 are formed long. In the case of a gull-wing type formed by molding, the foot height structure 12 is formed so that a space 11 having a space in which another semiconductor device can be located below the insulating film can be formed.

Normally, this stage is the end stage of the manufacture. In the second embodiment, the semiconductor device is a semi-finished semiconductor device 61 as shown in FIG.
Then, transfer molding is performed by clamping the mold to a mold die 29 made of, and a portion of the lead 5 excluding the foot-height structure 12 and the tip of the flat joint portion 10 is protected and reinforced by a reinforcing body 13 made of resin.

In the first embodiment, the cavity 30, the sub-runner 31, the air vent 32, and the gate 33 are provided on the lower mold 27 side.

In the transfer molding, the melted resin 34 flows from the sub-runner 31 through the gate 33 into the cavity 30. Thereafter, the resin 34 is cured, the mold is opened, and the unnecessary resin portion is removed to manufacture the upper semiconductor device 60 shown in FIG.

In the package 14, the semiconductor chip 4 is fixed on a support plate 62, and electrodes (not shown) of the semiconductor chip 4 and inner ends of the leads 5 are connected by conductive wires 63.

In the second embodiment, the upper semiconductor device 60
Since the foot height structure 12 of the lead 5 is protected and reinforced by the reinforcing body 13, the lead does not bend. Note that lead 5
Is formed from a lead frame, and since the thickness of the lead frame is generally about 0.1 mm even if it is thin, TCP
It is much thicker and has higher mechanical strength than the lead in the case of nook.

The second embodiment also has the same effects as the first embodiment.

(Embodiment 3) FIG. 9 shows Embodiment 3 of the present invention.
And FIG. 10 is a cross-sectional view of the semiconductor device.

In the third embodiment, the upper semiconductor device 70
This is a structure obtained by developing a conventional semiconductor device with a bumper. That is, the upper semiconductor device 70 of the third embodiment.
As shown in FIG. 9, a bumper 71 made of a resin having the same length as or longer than the protruding length of the lead 5 is formed at the four corners of a rectangular package 14.
The bumper 71 is formed at the same time when the package 14 is formed during transfer molding. Note that the bumper 71 may be formed after the package 14 is formed.

The lead 5 protruding from the side surface of the package 14 is extended downward so that the lead 5 has a space 11 below the package 14 in which another semiconductor device can be located. It is what it was. In order to form the space 11, the thickness of the package 14 below the support plate 62 is formed thin.

In the third embodiment, the upper semiconductor device 70
Although the lead 5 portion protruding from the package 14, that is, the lead portion of the foot-height structure 12 is not directly protected and reinforced,
Bumpers 71 projecting from the four corners of the package 14
If the outer end of the lead 5 attempts to contact another object, the bumper 71 contacts the other before the lead, and the outer end of the lead 5 does not contact the other so that the lead 5
To prevent external force from being applied.

Thus, it is possible to prevent the lead from being bent at the time of mounting. Therefore, the third embodiment has the same effect as the first embodiment.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and can be variously modified without departing from the gist thereof. Needless to say. For example, in each of the above embodiments, the reinforcing member is formed simultaneously with the package, but may be formed separately. The material may not be resin as long as it is insulating.

[0090]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) In a TCP-type semiconductor device having a foot-height lead structure having a space for placing another semiconductor device under a package, the foot-height structure portion of the lead is made of resin formed simultaneously with the formation of the package. Since the reinforcement is made of a protective body, the lead strength at the high part of the foot is strong and the lead is hardly deformed. Therefore, mounting defects due to lead deformation during mounting do not occur.

(2) Since lead deformation does not occur at the time of mounting, bonding between the flat bonding portion (mounting end) of the lead and the land is ensured, and mounting reliability is increased.

(3) Since lead deformation does not occur at the time of mounting, the work can be performed without paying attention to the foot-height structure portion of the lead, so that the mounting operation is smooth and the mounting operation time can be shortened.

(4) In a TCP type semiconductor device in which a lead is formed by etching a metal foil attached to an insulating film, the lead is thin and low in strength, but the foot-height structure portion of the lead is reinforced by a reinforcing member. Therefore, the lead strength is improved, and the stack structure becomes stable.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan view of the semiconductor device according to the first embodiment.

FIG. 3 is a plan view of a tape carrier used for manufacturing the semiconductor device of the first embodiment.

FIG. 4 is a plan view showing the semi-finished product semiconductor device cut and separated from the tape carrier in manufacturing the semiconductor device of the first embodiment.

FIG. 5 is a cross-sectional view showing a state in which the semi-finished product semiconductor device is molded in the manufacture of the semiconductor device of the first embodiment.

FIG. 6 is a cross-sectional view illustrating a mounted state of the semiconductor device of the first embodiment.

FIG. 7 is a sectional view showing a semiconductor device and the like according to a second embodiment of the present invention;

FIG. 8 is a cross-sectional view showing a state in which a reinforcing member is formed in the semiconductor device of the second embodiment.

FIG. 9 is a plan view showing a semiconductor device which is Embodiment 3 of the present invention.

FIG. 10 is a sectional view of a semiconductor device according to a third embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device (TCP type semiconductor device), 2 ... Hole (device hole), 3 ... Lead support part, 4 ... Semiconductor chip,
5 Lead, 6 Adhesive, 7 Electrode, 10 Flat joint, 11 Space, 12 Foot height structure, 13 Reinforcement, 14
... Package, 20 ... Tape carrier, 21 ... Insulating film (insulating tape), 22 ... Lead pattern, 23
... perforation holes, 24 ... long holes, 25 ... hanging parts,
26: semi-finished product semiconductor device, 27: lower die, 28: upper die,
29 mold die, 30 cavity, 31 subrunner, 32 air vent, 33 gate, 40 mounting board, 41 land, 42 solder, 45 semiconductor device, 46 lead, 47 mounting end , 48 ... Land, 49
... Package, 50 ... Solder, 60 ... Semiconductor device for upper stage,
61: semi-finished product semiconductor device; 62: support plate; 63: wire; 70: upper stage semiconductor device; 71: bumper.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 25/07 25/18

Claims (7)

[Claims] 1. A package having a package and a plurality of leads protruding from the package, wherein the leads are long downward so as to form a space in which another semiconductor device can be located under the package. A semiconductor device having a foot-height structure, wherein the leads are reinforced by a reinforcing body. 2. The semiconductor device according to claim 1, wherein said reinforcing member is formed of a resin fixed to said package. 3. The package according to claim 1, wherein the reinforcing member is formed at the same time when the package is formed.
Alternatively, the semiconductor device according to claim 2. 4. The semiconductor device according to claim 1, wherein said leads are formed by etching a metal foil attached to an insulating film. . 5. A step of preparing an insulating film having a lead pattern formed on a surface thereof, a step of fixing a semiconductor chip to the lead pattern via an electrode, and a step of forming a lead and an insulating film on an outer peripheral portion of the lead pattern. Cutting and forming a semi-finished product semiconductor device in which leads protrude from the periphery of the insulating film; and forming leads of the semi-finished product semiconductor device and positioning another semiconductor device under the insulating film. Forming the leads so as to have a space that can be made to work, and molding the semi-finished product semiconductor device, and sealing the semiconductor chip, the insulating film, and the inner ends of the leads with a package made of resin. A step of providing the resin up to the upper surface on the outer end side of the lead to reinforce the lead portion at the height of the foot. Manufacturing method of the device. 6. A step of preparing a lead frame made of a metal plate, a step of fixing a semiconductor chip to a predetermined portion of the lead frame, and connecting electrodes of the semiconductor chip and inner ends of the leads by conductive wires. And covering the inner end portions of the semiconductor chip, wires and leads with a package made of resin, and cutting and removing unnecessary portions of the lead frame and forming leads protruding from the package. A method of manufacturing a semiconductor device, wherein at the time of forming the lead, a lead is formed at a foot height so as to have a space under which the other semiconductor device can be located, without impairing the space function. Molding and reinforcing a foot-height lead portion protruding from the package with a resin body integrated with the package A method for manufacturing a semiconductor device, comprising: 7. A semiconductor device comprising: a package; a plurality of leads projecting from a side surface of the package; and a bumper provided at a corner of the package and projecting as long as the leads. Is a semiconductor device having a foot height structure that is long downward, and having a space in which another semiconductor device can be positioned under the package.