JPH1138448A - Method for correcting defect of active matrix substrate and device for correcting the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to correct the defect of a liquid crystal display panel without adversely affecting the data signal lines, etc., of a lower layer by removing part of a transparent conductive film by using a laser which is mostly absorbed by the transparent conductive film and interlayer insulating film from the transparent conductive film forming surface side. SOLUTION: Part of the transparent conductive film is removed from the transparent conductive film forming surface side of an active matrix substrate by using the laser absorbed in the transparent conductive film and the interlayer insulating film 3. In such a case, the laser energy is absorbed to some extent by the ITO of the upper layer and the remaining transmitted laser energy is mostly absorbed by the interlayer insulating film 3. The intensity of the laser is so set that the energy to the damage is not obtainable in reaching the signal lines 2 of the lower layer. For example, a third higher harmonic of a YAG laser is used as the laser. As a result, the ITO of leak parts 5 may be removed without damaging the signal lines 2 of the lower layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a defect correction method and a defect correction apparatus for correcting a defect of an active matrix substrate used for a liquid crystal display panel before bonding it to an opposing substrate.

[0002]

2. Description of the Related Art Liquid crystal display devices utilizing the electro-optic effect of liquid crystal for display devices are currently used in various fields such as information terminal devices such as notebook personal computers, OA devices and AV devices.

This liquid crystal display device comprises an active matrix substrate provided with gate signal lines and data signal lines orthogonal to each other, a large number of pixel electrodes formed in a matrix, and switching elements for controlling each pixel electrode. And a counter substrate provided with a color filter, a counter electrode, and the like, are adhered so that their electrode forming surfaces face each other with a predetermined gap therebetween, and liquid crystal is injected and sealed into the gap.

Incidentally, the manufacturing process of the active matrix substrate is complicated and must be performed through many manufacturing processes. Therefore, contamination of foreign substances and leakage between the pixel electrode and the gate signal line or the data signal line can be prevented. Defects are likely to occur and it is very difficult to eliminate them completely.
Therefore, it is very important to detect the defect at an early stage and correct it as needed to improve the production yield.

Therefore, conventionally, the active matrix substrate and the counter substrate are bonded to each other, and after the liquid crystal is injected, a lighting inspection is performed to detect the presence of a line defect or a point defect, and the defective portion can be corrected. If so, it was corrected by laser irradiation or the like.

FIG. 9 is a cross-sectional view showing an active matrix substrate used for a conventional liquid crystal display panel, wherein 101 is a glass substrate, 102 is a gate insulating film, 103 is a data signal line, and 104 is a pixel electrode. It should be noted that gate signal lines, switching elements, and the like are omitted in FIG. Further, this active matrix substrate shows a case where the data signal line 103 and the pixel electrode 104 leak due to the leak portion 105.

An active matrix substrate shown in FIG.
In a liquid crystal panel where a counter substrate (not shown) is bonded and liquid crystal is injected into the gap, the pixel electrode and the data signal line are leaking. Although appearing as a point defect, it can be corrected by removing the leak portion 105. Conventionally, in order to remove and correct the leak portion 105, even if the leak portion 105 is observed from the counter substrate side, the BM (black matrix) formed on the counter substrate is on the upper surface of the leak portion 105. Since the defective portion cannot be specified and cannot be corrected, the leak portion 105 is removed by irradiating a laser from the back surface of the substrate 101 as shown in FIG.

However, when a defect is detected at the stage of a liquid crystal panel in which an active matrix substrate and a counter substrate are bonded together and liquid crystal is injected between the substrates, if the detected defect cannot be corrected, There is a problem that the production yield is reduced because the entire panel has to be discarded.

Therefore, in recent years, it has been desired to detect and correct defects such as leaks in the state of the active matrix substrate. Defects in the substrate state can be detected by techniques such as image processing and resistance inspection.

[0010]

In recent years, in order to increase the aperture ratio of a liquid crystal display panel, as shown in FIG. 11, a data signal line 103, a gate signal line (not shown) and a gate insulating film are formed on a substrate 101. Forming an interlayer insulating film 106 covering the switching elements and the like.
A liquid crystal display device having an active matrix substrate having a structure in which a pixel electrode 104 is formed thereon has been developed. In this active matrix substrate, the signal lines 10
In order to form a capacitance between the pixel electrode 3 and the pixel electrode 104, these are slightly overlapped.

In the active matrix substrate having such a structure, as shown in FIG. 12, for example, as shown in FIG. 12, when the adjacent pixel electrode 104 leaks due to the leak portion 105, the data signal line 103 in the lower layer becomes a hindrance, as in the prior art. There is a problem that the laser cannot be irradiated from the back side of the substrate 101.

When the laser is irradiated from the back surface of the substrate while avoiding the lower data signal lines, the interlayer insulating film 106
As a result, there is a problem that the trimming accuracy is deteriorated because the laser irradiation mark becomes tapered due to the influence of the above, and it is difficult to remove a desired region.

Therefore, it is conceivable to irradiate such an active matrix substrate with a laser from the thin film forming side of the substrate. The thin film formed on the substrate is
A method of removing the thin film by irradiating a laser from the side on which the thin film is formed is disclosed in JP-A-7-307314. In this publication, in order to remove a thin film directly formed on a substrate, a pulse laser having a wavelength transparent to the thin film and having a wavelength absorbing and reflecting on the substrate is removed from the thin film forming surface side. A method of removing a thin film by irradiating an area to be formed is disclosed.

However, according to the technique disclosed in Japanese Patent Application Laid-Open No. 7-307314, the laser to be irradiated passes through the surface thin film and is absorbed and reflected by the underlying substrate. When used for repairing the matrix substrate, the surface thin film, that is, the laser that has passed through the pixel electrode is all absorbed and reflected by the lower interlayer insulating film, so that the interlayer insulating film is significantly destroyed and formed further below the interlayer insulating film. It is conceivable that the affected data signal line may be affected. Therefore, Japanese Patent Application Laid-Open No. 7-3
The technique disclosed in Japanese Patent Application Laid-Open No. 07314 has a problem that it cannot be applied to the modification of the active matrix substrate shown in FIG.

The present invention has been made in view of the above problems, and has as its object to provide a method and an apparatus for repairing a defect of a liquid crystal display panel which do not affect data signal lines and the like in the lower layer. It is.

[0016]

According to a first aspect of the present invention, there is provided a method for repairing a defect in an active matrix substrate, comprising: a gate signal line and a data signal line which are orthogonally different from each other; A method for repairing an active matrix substrate in which an interlayer insulating film is provided above the gate signal lines, data signal lines and switching elements, and a pixel electrode made of a transparent conductive film is provided on the interlayer insulating film. Removing a part of the transparent conductive film from the transparent conductive film forming surface side of the active matrix substrate by using a laser absorbed by the transparent conductive film and the interlayer insulating film. is there.

Therefore, the active matrix substrate can be repaired without causing the irradiated laser to damage the signal lines formed below the interlayer insulating film.

If the correction is performed by thermal processing such as infrared laser, the corrected portion is carbonized or thermally deformed, so that high trimming accuracy cannot be obtained. In addition, since a transparent conductive film such as ITO almost transmits infrared rays, it imparts undecayed energy to the lower layer pattern as it is. Therefore, there is a high possibility that the signal line below the interlayer insulating film is damaged, and it is difficult to set the laser irradiation conditions. For this reason, it is better to use a laser capable of non-thermal processing as the laser.
It is desirable to use one having a thickness of 00 nm or less.

Although a short wavelength laser of 400 nm or less can be obtained by using an excimer laser, it is desirable to use a third or fourth harmonic of a YAG laser, which is smaller and easier to handle.

In the active matrix substrate in which the pixel electrode leaks with the pixel electrode adjacent thereto, when the leaked portion is removed within a range not more than the signal line width of the lower layer, the pixel electrode is removed. Can be corrected without lowering the aperture ratio.

Further, for an active matrix substrate having a conductive foreign matter adhered in the pixel electrode formation region,
When the foreign matter is directly removed, the fragments may be scattered around to cause a new defect or a defect in the peripheral film may occur.However, it is necessary to remove the transparent conductive film around the foreign matter. Thereby, it is possible to perform the correction normally.

According to a sixth aspect of the present invention, there is provided an active matrix substrate defect repair apparatus comprising: a gate signal line and a data signal line which are orthogonally different from each other; and a switching element provided near an intersection thereof. Signal line,
A substrate to be repaired is placed in an active matrix substrate defect repair apparatus in which an interlayer insulating film is provided above data signal lines and switching elements, and a pixel electrode made of a transparent conductive film is provided on the interlayer insulating film. An XY stage, a laser oscillator above the stage, an electric slit for controlling an irradiation area of a laser emitted from the laser oscillator, and a condenser lens for enlarging or reducing the laser passing through the slit. The apparatus is characterized in that, by controlling the movement of the XY stage in synchronization with the irradiation pulse of the laser, the laser irradiated on the substrate to be corrected is arbitrarily scanned linearly or curvedly.

Therefore, when the pixel electrodes leak from each other, the leak portion is removed in the form of an elongated line,
Defects can be corrected without lowering the aperture ratio. In addition, when a conductive foreign matter adheres to the pixel electrode, the correction can be performed normally by removing the periphery of the foreign matter in a curved shape.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. This embodiment shows a method of correcting a case where the pixel electrodes leak.

FIG. 1 shows a data signal line 2, a gate signal line (not shown), a gate insulating film (not shown), a capacitance wiring (not shown), and a switching element (not shown) on a glass substrate 1. In the active matrix substrate in which the interlayer insulating film 3 is formed so as to cover the like and the pixel electrode 4 is formed on the interlayer insulating film 3, an adjacent pixel electrode leaks as shown in FIG. FIG.

The data signal line 2 and the pixel electrode 4 are made of ITO having a thickness of 1500 nm and 1000 nm, respectively, and the interlayer insulating film 3 is made of an acrylic resin having a thickness of about 1 to 3 μm.

In this active matrix substrate, since the data signal line 2 exists below the leak portion 5, the laser cannot be irradiated from the back surface side of the substrate. Therefore, as shown in FIG. 2, the laser is irradiated from the side of the substrate on which the pixel electrode is formed.

At this time, it is necessary to adjust the intensity of the laser so as not to damage the lower signal line by the laser irradiation. In order to prevent the lower signal line from being damaged, the laser energy is absorbed to some extent by the upper ITO, and the remaining transmitted laser energy is almost absorbed by the interlayer insulating film 3 and reaches the lower signal line 2. What is necessary is just to set the intensity of a laser so that the energy leading to damage may not be obtained. In the present embodiment, a third harmonic (wavelength 355) of a YAG laser is used as the laser.
nm), the energy density is about 20-25 mJ /
cm ² and a pulse width of about 8 to 10 ns. The laser is a fourth harmonic of a YAG laser (wavelength 266n).
m) may be used.

FIG. 3A is a cross-sectional view showing the active matrix substrate after the active matrix substrate shown in FIG. 1 has been modified according to the present embodiment, and FIG. FIG. 4 is a plan view when the substrate is viewed from above. As can be seen from this figure, when the above-mentioned laser is used, the laser that has passed through ITO among the irradiated lasers is almost absorbed by the interlayer insulating film 3, and the laser 5 in the leak portion 5 is not damaged without damaging the underlying signal line 2. ITO can be removed.

Next, a description will be given of a defect repairing apparatus for repairing the present invention.

FIG. 4 is a conceptual diagram showing a defect repair apparatus according to the present invention, wherein 11 is a YAG laser oscillator, 12 is a wavelength conversion element, and 13 is an energy attenuating filter. The YAG laser oscillator 11 outputs 1 which is the fundamental wavelength of the YAG laser.
A 060 nm laser is emitted, which is converted to the third harmonic of the YAG laser by passing through the wavelength conversion element 12. Further, the intensity of the converted laser is adjusted by the energy attenuating filter 13.

Reference numerals 15 and 16 denote a light source and a CCD camera for photographing a laser irradiation spot, and 14 denotes a half mirror. Reference numeral 17 denotes an electric slit for controlling a laser irradiation area, reference numeral 18 denotes a power detector for detecting the intensity of the irradiated laser, and reference numeral 19 denotes a condenser lens for enlarging or reducing the irradiated laser.

Further, reference numeral 20 denotes a substrate to be inspected, reference numeral 22 denotes an XY stage movable in two directions orthogonal to each other, and reference numeral 21 denotes a backlight for illuminating the substrate to be inspected 20 mounted on the XY stage 22.

The YAG laser oscillator 11, wavelength conversion element 12, energy attenuation filter 13, light source 15, CC
D camera 16, electric slit 17, power detector 18,
The condenser lens 19 and the XY stage 22 are connected via an interface 23 to a control unit 24 having a CPU, a ROM, and a RAM. These operate in response to an instruction from the external controller 25, and the image captured by the CCD camera 16 is displayed on a monitor 26.

Next, a description will be given of a method of repairing an active matrix substrate in which pixel electrodes leak as shown in FIG. 1 using this defect repair apparatus.

First, an active matrix substrate in which a defect has been detected by a method such as image processing is set in the defect correcting device by a transport system. At this time, if the position of the defective portion is known, the movement of the XY stage 22 is controlled to roughly match the laser irradiation area to the defective portion.

Next, the XY stage 22 and the electric slit 1 are controlled by the external controller 25 while watching the monitor 26.
7. Control the condenser lens 19 to finely adjust the laser irradiation area.

Next, a laser is irradiated toward the defective portion. At this time, the width of the lower data signal line is generally 8 μm.
m, it is desirable that the width of the transparent conductive film to be removed is also suppressed to less than this. Therefore, a laser having an irradiation size smaller than the signal line width is repeatedly irradiated, and the movement of the XY stage is controlled in synchronization with the irradiation pulse of the laser. By doing so, the leak portion can be removed in the form of an elongated line as shown in FIG. This can be achieved by, for example, designating a start point and an end point of laser irradiation on the monitor 26 so that the laser can scan an arbitrary line. Thus, the defect can be corrected without lowering the aperture ratio of the pixel electrode.

In the correction described in the above-described embodiment, since the film between the pixel electrodes is transparent, the leak portion may not be found by a method such as image processing because the film is transparent. In such a case, if the pixel electrode pattern is stored in the control unit 24 that controls the movement of the XY stage 22 in advance, even if a leak point cannot be found, if a defective pixel can be identified by a resistance test or the like, the defective pixel is identified as a pixel. By processing the electrode pattern, the leak can be corrected. The method is briefly described below.

First, the shape of the pixel electrode is stored in the ROM in the control unit 24 in advance. Then, when the substrate is set from the transport system device, the defect information such as the coordinates of the defective pixels collected by the detection device is transferred from the network system to the defect correction device, and the XY stage 22 is moved based on the information, Is adjusted to the defective pixel.

Thereafter, the thin film removal start point is determined from the substrate pattern shape by pattern matching, and
XY according to the shape of the pixel electrode stored in the ROM
The stage 22 is driven to perform automatic correction.

At this time, the shapes of a plurality of pixel electrodes are stored in the ROM in the control unit 24, and an appropriate pixel electrode pattern is selected from these when actually performing correction. For example, it is possible to perform correction on a plurality of types of substrates.

(Embodiment 2) A second embodiment of the present invention will be described below with reference to FIGS. This embodiment shows a method of correcting a case where a pixel electrode and a lower layer pattern leak through a conductive foreign matter.

FIG. 5 shows an interlayer insulating film 3 covering a data signal line 2, a gate signal line (not shown), a gate insulating film (not shown), a switching element (not shown), etc. on a glass substrate 1. Is formed, and in the active matrix substrate in which the pixel electrode 4 is formed on the interlayer insulating film 3, the data signal line 2 and the pixel electrode 4 leak through the conductive foreign matter 6 penetrating the interlayer insulating film 3. FIG.

Although not shown, the conductive foreign matter 6
In the case where the gate signal line leaks to the pixel electrode 4 via the gate electrode, the following correction method can be applied. In some cases, a capacitance line is formed on the glass substrate 1 in parallel with the gate signal line. The same applies when the capacitance line and the pixel electrode 4 leak through the conductive foreign matter 6.

The data signal line 2 and the pixel electrode 4 have a thickness of about 1500 nm and about 1000 nm, respectively.
And the interlayer insulating film 3 has a thickness of about 1 to 3 μm.
m of an acrylic resin.

In this active matrix substrate, when the conductive foreign matter 6 is directly blown off by a laser, the interlayer insulating film 3 is removed.
Is lost, which leads to the generation of a new defect. Therefore, the conductive foreign matter 6 is not directly irradiated with the laser, but the ITO around the conductive foreign matter 6 is removed by the laser to correct the leak. Note that the laser irradiation conditions at this time are the same as those in Embodiment 1. 6A and 6B show a cross-sectional view of the active matrix substrate after the modification of the present embodiment is performed and a plan view when viewed from above.

Further, as the defect repairing apparatus for performing the repair according to the present embodiment, the defect repairing apparatus shown in FIG. 4 can be used.

As in the present embodiment, the defect detection when a conductive foreign substance adheres in the pixel electrode formation region uses a film thickness inspection, an electro-optical inspection, etc. in addition to the image processing and the resistance inspection. be able to.

When the defect is corrected by using the defect correcting device,
It is necessary to irradiate the laser around the conductive foreign material 6,
This can be achieved by, for example, designating the center position and one point on the circumference on the monitor 26 so that the laser can scan on an arbitrary circumference. At this time, the area inside the circumference scanned by the laser is desirably suppressed to about 1/3 of the area of the pixel electrode.

(Embodiment 3) Hereinafter, a third embodiment of the present invention will be described with reference to FIG. The present embodiment shows a correction method for preventing a leak of a pixel electrode and a counter electrode due to the conductive foreign matter when the conductive foreign matter adheres to the pixel electrode. Although not shown, the same correction method as described below is applied to a case where an insulating or conductive foreign matter adheres to the interlayer insulating film and a pixel electrode is formed to cover the foreign matter. Can be.

FIG. 7 shows an interlayer insulating film 3 covering a data signal line 2, a gate signal line (not shown), a gate insulating film (not shown), a switching element (not shown), etc. on a glass substrate 1. FIG. 2 is a view showing an active matrix substrate in which a pixel electrode 4 is formed on the interlayer insulating film 3 and a conductive foreign material 6 is attached on the pixel electrode 4.

The data signal line 2 and the pixel electrode 4 have a thickness of about 1500 nm and about 1000 nm, respectively.
And the interlayer insulating film 3 has a thickness of about 1 to 3 μm.
m of an acrylic resin.

If the active matrix substrate is bonded to the counter substrate as it is, the conductive foreign matter 6 leaks to the counter electrode formed on the counter substrate, and it is necessary to prevent this.

As a method therefor, there is a method in which the size of the conductive foreign matter 6 is reduced by a pressing device so as to be equal to or less than the cell thickness of the active matrix substrate and the counter substrate. When the substrate becomes large, the substrate may be broken by the pressure.

Therefore, as in the second embodiment, by removing the ITO around the conductive foreign matter 6 with a laser, it is possible to prevent the leak between the pixel electrode 4 and the counter electrode (not shown). . Note that the laser irradiation conditions are the same as in Embodiment 1.

Further, as the defect repairing apparatus for performing the repair according to the present embodiment, the defect repairing apparatus shown in FIG. 4 can be used. Further, a repair method using the defect repair apparatus is the same as that of the second embodiment, and a description thereof will be omitted.

(Embodiment 4) Hereinafter, a fourth embodiment of the present invention will be described with reference to FIG. In this embodiment, a foreign substance adheres before or during the formation of a transparent conductive film such as ITO serving as a pixel electrode, and during patterning, the transparent conductive film on the back side of the foreign substance cannot be etched and the pixel electrodes leak. It shows how to correct the case.

FIG. 8 shows an interlayer insulating film 3 covering a data signal line 2, a gate signal line (not shown), a gate insulating film (not shown), a switching element (not shown) and the like on a glass substrate 1. FIG. 2 is a view showing an active matrix substrate in which pixel electrodes 4 are formed on the interlayer insulating film 3 and foreign matter 7 is attached to an etched portion between the pixel electrodes 4.

The data signal line 2 and the pixel electrode 4 have a thickness of about 1500 nm and about 1000 nm, respectively.
And the interlayer insulating film 3 has a thickness of about 1 to 3 μm.
m of acrylic resin.

In this active matrix substrate, the foreign matter 7 attached to the etched portion of the ITO before or during the formation of the ITO serving as the pixel electrode 4 becomes an obstacle, and as shown in FIG. As a result, a desired etching cannot be performed because of the occurrence of the generation region 8, and adjacent pixel electrodes 4 leak under the foreign matter 7. Therefore, a leak occurs not only when the foreign matter 7 is conductive but also when it is insulating. This defect is difficult to prevent beforehand,
Even if etching is attempted again, the foreign matter 7 becomes an obstacle, so that etching cannot be performed, and the leak cannot be eliminated.

Therefore, as in the second embodiment, by removing the ITO around the foreign matter 7 with a laser, it is possible to eliminate the leak between the pixel electrodes 4.
Note that the laser irradiation conditions are the same as in Embodiment 1.

Further, as the defect repairing apparatus for performing the repair according to the present embodiment, the defect repairing apparatus shown in FIG. 4 can be used. Further, a repair method using the defect repair apparatus is the same as that of the second embodiment, and a description thereof will be omitted.

[0064]

As described above, the method for repairing defects of an active matrix substrate according to the present invention uses the laser which is almost absorbed by the transparent conductive film and the interlayer insulating film from the transparent conductive film forming surface side. Since a part of the transparent conductive film is removed, there is an effect that the active matrix substrate can be repaired without irradiating a laser beam to the signal line formed below the interlayer insulating film.

If a laser having an oscillation wavelength of 400 nm or less is used as the laser, non-thermal processing can be performed, so that the effect of repairing without damaging the interlayer insulating film and the underlying signal line can be obtained. Play.

A short wavelength laser having a wavelength of 400 nm or less can be obtained by using an excimer laser. However, if a third or fourth harmonic of a YAG laser is used, the apparatus can be reduced in size and easy to handle. So desirable.

In the active matrix substrate in which the pixel electrode leaks with the pixel electrode adjacent thereto, when the leaked portion is removed within a range not more than the signal line width of the lower layer, the pixel electrode is removed. This has the effect that the correction can be performed without lowering the aperture ratio.

For an active matrix substrate having a conductive foreign matter attached in the pixel electrode formation region,
If the pixel electrode around the foreign matter is removed, a new defect occurs as in the case where the foreign matter is directly removed,
There is an effect that the correction can be performed normally without causing a defect or the like of the peripheral film.

According to the defect correcting apparatus for an active matrix substrate of the present invention, by controlling the movement of the XY stage in synchronization with the laser irradiation pulse, the laser irradiated on the substrate to be corrected can be arbitrarily linear or curved. So that if the pixel electrodes leak,
By removing the leak portion in the form of a long and thin line, defects can be corrected without lowering the aperture ratio, and when conductive foreign matter adheres to the pixel electrode, the periphery of the foreign matter is removed in a curved shape. By doing so, there is an effect that the correction can be performed normally.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of an active matrix substrate before a defect repaired by a defect repair method according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a state where a defect of an active matrix substrate is corrected according to the first embodiment of the present invention.

3A and 3B are a cross-sectional view and a plan view of the active matrix substrate after defect correction according to the first embodiment of the present invention.

FIG. 4 is a conceptual diagram showing a defect repair apparatus for performing a defect repair according to the present invention.

FIG. 5 is a cross-sectional view of an active matrix substrate before a defect repaired by the defect repair method according to the second embodiment of the present invention.

6A and 6B are a cross-sectional view and a plan view of an active matrix substrate after defect correction according to a second embodiment of the present invention.

FIG. 7 is a cross-sectional view of an active matrix substrate before the defect is corrected by the defect correction method according to the third embodiment of the present invention.

FIG. 8 is a cross-sectional view of an active matrix substrate before a defect is repaired by the defect repairing method according to the fourth embodiment of the present invention.

FIG. 9 is a cross-sectional view of an active matrix substrate before a defect repaired by a conventional defect repair method.

FIG. 10 is a diagram showing a state where defect correction of a conventional active matrix substrate is performed.

FIG. 11 is a cross-sectional view of an active matrix substrate having a pixel electrode formed on an interlayer insulating film.

12 is a diagram showing a cross-sectional view when pixel electrodes of the active matrix substrate in FIG. 11 leak from each other.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Data signal line 3 Interlayer insulating film 4 Pixel electrode 5 Leakage part 6 Conductive foreign matter 7 Foreign matter 8 Photo defect generation area 11 YAG laser oscillator 12 Wavelength conversion element 13 Energy attenuation filter 14 Half mirror 15 Light source 16 CCD camera 17 Motorized slit 18 Power detector 19 Condenser lens 20 Substrate to be inspected 21 Backlight 22 XY stage 23 Interface 24 Control unit 25 External controller 26 Monitor

Claims (6)

[Claims] 1. A gate signal line and a data signal line which are orthogonally different from each other, and a switching element provided near the intersection of the gate signal line and the data signal line, and an interlayer insulating film is formed on the gate signal line, the data signal line and the switching element. Is provided,
And a method for repairing a defect of an active matrix substrate in which a pixel electrode made of a transparent conductive film is provided on the interlayer insulating film, wherein the transparent conductive film and the interlayer insulating film are formed from the transparent conductive film forming surface side of the active matrix substrate. A method for repairing a defect in an active matrix substrate, wherein a part of the transparent conductive film is removed by using a laser absorbed by the active matrix substrate. 2. The method according to claim 1, wherein the laser has an oscillation wavelength of 400 nm or less. 3. The method according to claim 2, wherein the laser is a third harmonic or a fourth harmonic of a YAG laser. 4. An active matrix substrate in which the pixel electrode leaks with a pixel electrode adjacent to the pixel electrode, when removing the leak portion, removing the leak portion within a range not more than a signal line width of a lower layer. Item 4. The method for correcting a defect of an active matrix substrate according to any one of Items 1 to 3. 5. The active matrix substrate according to claim 1, wherein the transparent conductive film surrounding the foreign matter is removed from the active matrix substrate having the conductive foreign matter attached in the pixel electrode formation region. Defect repair method for matrix substrate. 6. A gate signal line and a data signal line orthogonal to each other and a switching element provided near the intersection thereof, and an interlayer insulating film is formed on the gate signal line, the data signal line and the switching element. Is provided,
A defect correction device for an active matrix substrate provided with a pixel electrode made of a transparent conductive film on the interlayer insulating film; an XY stage on which a substrate to be repaired is mounted; a laser oscillator above the stage; At least an electric slit for controlling an irradiation area of a laser emitted from the laser, and a condenser lens for enlarging or reducing the laser passing through the slit, and moving the XY stage in synchronization with an irradiation pulse of the laser. A defect repairing apparatus for an active matrix substrate, characterized in that the laser irradiating the substrate to be corrected is arbitrarily scanned linearly or curvedly by controlling.