JPH1135801A - Epoxy resin composition and semiconductor sealing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition excellent in moisture resistance, solder resistance, moldability and fluidity, and hardly causing peeling, etc., of the sealing resin from a semiconductor chip, etc., by using a specific epoxy resin and a specified silane coupling agent. SOLUTION: This epoxy resin composition comprises (A) an epoxy resin of formula I [(n) is 0 or not less than 1], (B) a phenol resin having two or more phenolic hydroxy groups capable of reacting with the epoxy group of the component A (e.g. a compound of formula II), (C) a silane coupling agent of the formula, R<1> -Cn H2n -Si(OR<2> )3 (R<1> is an atomic group having epoxy group or amino group; R<2> is methyl or ethyl), (e.g. a compound of formula III), (D) 25-92 wt.% alumina powder having <=100) m maximum particle diameter, preferably having low impurity concentration, further having <=30 μm average particle diameter and coated with fused silica, and (E) about 0.01-5 wt.% hardening accelerator such as the phosphorus-based, imidazole-based or DBU-based one, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in moisture resistance, solder heat resistance, and moldability, and a semiconductor sealing device.

[0002]

2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as the development of high integration and high reliability technologies, automation of the mounting process of semiconductor devices has been promoted. For example, when a flat package type semiconductor device is mounted on a circuit board, soldering has conventionally been performed for each lead pin, but recently, a solder immersion method or a solder reflow method has been adopted.

[0003]

A semiconductor device encapsulated with a resin composition comprising a conventional epoxy resin such as a novolak type epoxy resin, a novolak type phenol resin and a highly filled inorganic filler, requires that the entire device be immersed in a solder bath. There is a drawback that the moisture resistance is reduced when performing. Especially when the semiconductor device that has absorbed moisture is immersed, the sealing resin and the semiconductor chip,
Alternatively, peeling between the sealing resin and the lead frame and internal resin cracks may cause significant deterioration in moisture resistance, leading to disconnection due to electrode corrosion and leakage current due to moisture. As a result, the semiconductor device has a long-term reliability. There is a drawback that the properties cannot be guaranteed.

[0004] Further, the biphenyl type epoxy resin represented by the following formula (5) has a low viscosity and is suitable for high filling of an inorganic filler, but has a drawback of poor moldability such as curability. Was.

[0005]

Embedded image

The present invention has been made in order to solve the above-mentioned disadvantages, and has a small influence of moisture absorption. In particular, it has excellent moisture resistance after solder bath immersion, excellent solder heat resistance, moldability, fluidity, and a sealing resin. Epoxy resin composition that can guarantee long-term reliability without peeling of semiconductor chip or sealing resin and lead frame or occurrence of internal resin cracks, no breakage of electrodes due to corrosion of electrodes, and no leakage current due to moisture. It is intended to provide a semiconductor sealing device.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above-mentioned object, and as a result, by using a specific epoxy resin and a specific silane coupling agent, moisture resistance and solder heat resistance have been improved. It has been found that a resin composition having excellent moldability and the like can be obtained, and the present invention has been completed.

That is, the present invention provides (A) an epoxy resin represented by the following general formula:

[0009]

Embedded image (Where n represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a silane coupling agent having an epoxy group or an amino group represented by the following general formula,

[0010]

Embedded image R ¹ —C _n H _2n —Si (OR ² ) ₃ (where R ¹ is an atomic group having an epoxy group or an amino group, R ² is a methyl group or an ethyl group, and n is 0) Or 1
(D) a fused silica-coated alumina powder having a maximum particle size of 100 μm or less and (E) a curing accelerator as essential components. An epoxy resin composition comprising a coated alumina powder in a ratio of 25 to 92% by weight. A semiconductor sealing device is characterized in that a semiconductor chip is sealed with a cured product of the epoxy resin composition.

Hereinafter, the present invention will be described in detail.

As the epoxy resin (A) used in the present invention, the one represented by the above formula (6) is used. In addition, a novolak epoxy resin, an epibis epoxy resin, and other commonly known epoxy resins can be used in combination with the epoxy resin.

The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule capable of reacting with the epoxy group of the epoxy resin (A). Absent. As specific compounds, for example,

[0014]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0015]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0016]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0017]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0018]

Embedded image (Where n represents 0 or an integer of 1 or more). These can be used alone or in combination of two or more.

As the silane coupling agent having an epoxy group or an amino group (C) used in the present invention, those represented by the above general formula 7 can be used. Specifically, for example,

[0020]

Embedded image

[0021]

Embedded image

[0022]

Embedded image H ₂ N—C ₃ H ₆ Si (OCH ₃ ) _{3 and the} like can be used, and these can be used alone or in combination.

(D) The maximum particle size used in the present invention is 100 μm
The following fused silica-coated alumina powder having a low impurity concentration and an average particle size of 30 μm or less is used. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are poor, which is not preferable. The mixing ratio of the fused silica-coated alumina powder is
It is preferable that the composition is contained so as to contain 25 to 92% by weight based on the whole resin composition. If the proportion is less than 25% by weight, the resin composition has a high hygroscopicity and is inferior in moisture resistance after immersion in solder, and if it exceeds 92% by weight, the fluidity becomes extremely poor,
Poor moldability is not preferred. When a silane coupling agent is added to these fused silica-coated alumina powders and immediately treated with a Henschel mixer, a super mixer, or the like, the surface can be uniformly treated, and the effect can be sufficiently exhibited.

The (E) curing accelerator used in the present invention includes a phosphorus-based curing accelerator, an imidazole-based curing accelerator, and D
BU-based curing accelerators, other curing accelerators, and the like can be widely used. These can be used alone or in combination of two or more. It is desirable that the curing accelerator is blended so as to contain 0.01 to 5% by weight based on the whole resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition is long, the curing properties are poor, and
If it exceeds 5% by weight, the fluidity is extremely deteriorated, resulting in poor moldability, and the electrical properties are also deteriorated, resulting in poor moisture resistance.

The epoxy resin composition of the present invention comprises the above-mentioned specific epoxy resin, phenol resin, specific silane coupling agent, fused silica-coated alumina powder having a maximum particle size of 100 μm or less, and a curing accelerator as essential components. But
To the extent not contrary to the object of the present invention, and if necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, release agents such as paraffin, antimony trioxide and the like Flame retardants, coloring agents such as carbon black, rubber-based or silicone-based low-stress imparting agents, and the like can be appropriately added and blended.

A general method for preparing the epoxy resin composition of the present invention as a molding material is as follows.
A specific silane coupling agent is added to the following fused silica-coated alumina powder to perform a surface treatment, and then the above-described specific epoxy resin, phenol resin, silane coupling agent-treated fused silica-coated alumina powder and a curing accelerator, and other After the components are blended and mixed sufficiently uniformly with a mixer or the like, a melt-mixing treatment with a hot roll or a mixing treatment with a kneader or the like is further performed, then solidified by cooling and pulverized to an appropriate size to obtain a molding material. . When the molding material thus obtained is applied to sealing, covering, insulating, etc. of electronic parts or electric parts including semiconductor devices, excellent properties and reliability can be imparted.

Further, the semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the above-mentioned molding material. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or more.

[0028]

The epoxy resin composition and the semiconductor encapsulation device of the present invention use the above-mentioned specific epoxy resin and phenol resin, a specific silane coupling agent, fused silica-coated alumina powder, and a curing accelerator to obtain a resin composition. It reduces the water absorption of the product, improves moldability, fluidity, thermomechanical properties and low stress, eliminates resin cracks after solder immersion and solder reflow, and reduces moisture resistance deterioration.

[0029]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. "%" In the following Examples and Comparative Examples
Means "% by weight".

Example 1 Alumina powder coated with fused silica (maximum particle size 100 μm or less)
84.0% was placed in a Hensyl mixer, and 0.4% of the above-mentioned silane coupling agent of Chemical Formula 13 was added thereto with stirring to perform surface treatment on the above-mentioned fused silica-coated alumina powder.

In addition, 7.1% of an aralkyl skeleton-containing epoxy resin represented by the following structural formula:

[0032]

Embedded image (Where n represents 0 or an integer of 1 or more) 1.5% of tetrabromobisphenol A type epoxy resin,
1.2% of the phenolic resin of the above formula 8, 2.9% of the phenolic resin of the above formula 9, 0.2% of triphenylphosphine, 0.4% of carnauba wax, 0.3% of carbon black, and 2.0% of antimony trioxide were added and mixed at room temperature. After kneading and cooling at 70 to 100 ° C., the mixture was pulverized to produce a molding material (A).

Example 2 Fused silica-coated alumina powder (maximum particle size 100 μm or less)
84.0% was placed in a Hensyl mixer, and 0.4% of the above-mentioned silane coupling agent of Chemical Formula 13 was added thereto with stirring to perform surface treatment on the above-mentioned fused silica-coated alumina powder.

The aralkyl skeleton-containing epoxy resin of the above formula (7.1), tetrabromobisphenol A
1.5% epoxy resin, phenol resin of formula 8
1.2%, 2.9% of the above phenolic resin, 0.2% of triphenylphosphine, 0.4% of carnauba wax,
0.3% carbon black and antimony trioxide 2.0
% Was added and mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and then pulverized to produce a molding material (B).

Example 3 Fused silica-coated alumina powder (maximum particle size 100 μm or less)
84.0% was placed in a Hensyl mixer, and 0.4% of the above-mentioned silane coupling agent of Chemical Formula 14 was added thereto with stirring to perform surface treatment on the above-mentioned alumina powder coated with fused silica.

The epoxy resin having an aralkyl skeleton represented by Chemical formula 16 (7.1%), the tetrabromobisphenol A type epoxy resin 1.5%, the phenol resin (Chemical formula 8) 1.2%, the phenol resin (Chemical formula 9) 2.9%, and triphenylphosphine 0.2 %, Carnauba waxes 0.4%, carbon black 0.3% and antimony trioxide 2.0% were added and mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and pulverized to produce a molding material (C).

Comparative Example 1 Fused silica-coated alumina powder (maximum particle size 100 μm or less)
80.0% was placed in a Hensyl mixer, and the above-mentioned fused silica-coated alumina powder was surface-treated by adding 0.4% of the above-mentioned silane coupling agent of Chemical Formula 13 with stirring.

To this, 2.0% of tetrabromobisphenol A type epoxy resin, 8.1% of o-cresol novolak epoxy resin, 2.0% of phenol resin of the above formula 8, 4.6% of phenol resin of the above formula 9, and 0.2% of triphenylphosphine , 0.4% of carnauba wax, 0.3% of carbon black and 2.0% of antimony trioxide were added and mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and then pulverized to obtain a molding material (D).

Comparative Example 2 Fused silica-coated alumina powder (maximum particle size 100 μm or less)
84.0% was placed in a Hensyl mixer, and 0.4% of the above-mentioned silane coupling agent of Chemical Formula 13 was added thereto with stirring to perform surface treatment on the above-mentioned fused silica-coated alumina powder.

In addition, 1.5% of tetrabromobisphenol A type epoxy resin and 6.2% of biphenyl type epoxy resin
%, The above-mentioned phenol resin of formula 8 1.5%, the above-mentioned phenol resin of formula 9 3.5%, triphenylphosphine 0.2
%, Carnauba wax 0.4%, carbon black 0.3
%, And 2.0% of antimony trioxide were added and mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and then pulverized to produce a molding material (E).

The molding materials (A) to (E) thus produced
Was transferred into a mold heated to 170 ° C., and the semiconductor chip was sealed and cured to produce a semiconductor sealing device. Various tests were performed on these semiconductor sealing devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor sealing device of the present invention are excellent in moisture resistance, solder heat resistance, and moldability. Thus, a remarkable effect of the present invention could be confirmed.

[0042]

[Table 1] * 1: Spiral flow at 175 ° C. was measured according to EMMI-I-66. * 2: Koka flow viscosity was measured at 175 ° C. * 3: A molded product (test piece) was prepared by transfer molding at 175 ° C and 80 kg / cm ² for 2 minutes, post-cured at 175 ° C for 8 hours, and tested according to JIS-K-6911. * 4: A molded article similar to * 3 was prepared, post-cured at 175 ° C for 8 hours, made into a test piece of appropriate size, and measured using a thermomechanical analyzer. * 5: * 6: 5.3 x 5.3 mm chip is placed in a VQFP (12 x 12 x 1.4 mm thick) package, transfer-molded using molding materials at 175 ° C for 2 minutes, and post-cured at 175 ° C for 8 hours. Was done. The semiconductor encapsulation device thus obtained was subjected to a moisture absorption treatment at 85 ° C., 85% for 48 hours, and then the weight was calculated. Further, this was passed through an air reflow machine (Max 240 ° C.), and the presence or absence of external and internal cracks was examined. * 7: Continuous molding was performed at 175 ° C. ○: no problem with 200 shots, △: poor curing with less than 200 shots, x: poor curing with less than 100 shots.

[0043]

As is apparent from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance, solder heat resistance, moldability, and filling of thin packages and the like. It is also excellent in performance, is less affected by moisture absorption, can significantly reduce disconnection due to electrode corrosion, generation of leak current due to moisture, and the like, and can guarantee reliability for a long period of time.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/29 H01L 23/30 R 23/31

Claims (2)

[Claims] (A) an epoxy resin represented by the following general formula: (Wherein n represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a silane coupling agent having an epoxy group or an amino group represented by the following general formula, ## STR2 ## R ¹ —C _n H _2n —Si (OR ² ) ₃ (wherein, R ¹ represents an atomic group having an epoxy group or an amino group, R ² represents a methyl group or an ethyl group, and n represents 0 or 1)
(D) a fused silica-coated alumina powder having a maximum particle size of 100 μm or less and (E) a curing accelerator as essential components. An epoxy resin composition comprising a coated alumina powder in a ratio of 25 to 92% by weight. (A) an epoxy resin represented by the following general formula: (Wherein n represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a silane coupling agent having an epoxy group or an amino group represented by the following general formula, ## STR4 ## R ¹ —C _n H _2n —Si (OR ² ) ₃ (wherein, R ¹ represents an atomic group having an epoxy group or an amino group, R ² represents a methyl group or an ethyl group, and n represents 0 or 1)
(D) a fused silica-coated alumina powder having a maximum particle size of 100 μm or less and (E) a curing accelerator as essential components. A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of an epoxy resin composition containing 25 to 92% by weight of coated alumina powder.