JPH0881542A - Epoxy resin composition and semiconductor device sealed therewith - Google Patents
Epoxy resin composition and semiconductor device sealed therewithInfo
- Publication number
- JPH0881542A JPH0881542A JP6244796A JP24479694A JPH0881542A JP H0881542 A JPH0881542 A JP H0881542A JP 6244796 A JP6244796 A JP 6244796A JP 24479694 A JP24479694 A JP 24479694A JP H0881542 A JPH0881542 A JP H0881542A
- Authority
- JP
- Japan
- Prior art keywords
- silica powder
- resin composition
- epoxy
- epoxy resin
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐湿性、半田耐熱性、
成形性及び熱伝導性に優れたエポキシ樹脂組成物および
半導体封止装置に関する。The present invention relates to moisture resistance, solder heat resistance,
The present invention relates to an epoxy resin composition excellent in moldability and thermal conductivity and a semiconductor encapsulation device.
【０００２】[0002]
【従来の技術】近年、半導体集積回路の分野において、
高集積化、高信頼性化の技術開発と同時に半導体装置の
実装工程の自動化が推進されている。例えばフラットパ
ッケージ型の半導体装置を回路基板に取り付ける場合
に、従来、リードピン毎に半田付けを行っていたが、最
近では半田浸漬方式や半田リフロー方式が採用されてい
る。2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as technology development for high integration and high reliability, automation of the mounting process of semiconductor devices is being promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, soldering is performed for each lead pin, but recently, a solder dipping method or a solder reflow method has been adopted.
【０００３】[0003]
【発明が解決しようとする課題】従来の半導体装置、す
なわちノボラック型エポキシ樹脂等のエポキシ樹脂、ノ
ボラック型フェノール樹脂および無機充填剤からなる樹
脂組成物によって封止した半導体装置は、装置全体の半
田浴浸漬を行うと耐湿性が低下するという欠点があっ
た。特に吸湿した半導体装置を浸漬すると、封止樹脂と
半導体チップ、あるいは封止樹脂とリードフレームとの
間の剥がれや、内部樹脂クラックが生じて著しい耐湿性
劣化を起こし、電極の腐蝕による断線や水分によるリー
ク電流を生じ、その結果、半導体装置は、長期間の信頼
性を保証することができないという欠点があった。A conventional semiconductor device, that is, a semiconductor device sealed with a resin composition comprising an epoxy resin such as a novolac type epoxy resin, a novolac type phenolic resin and an inorganic filler is a solder bath for the entire device. There is a drawback in that the moisture resistance is lowered by the immersion. In particular, when a semiconductor device that has absorbed moisture is dipped, peeling between the encapsulating resin and the semiconductor chip, or the encapsulating resin and the lead frame, and internal resin cracking cause significant deterioration in moisture resistance, causing disconnection and moisture due to electrode corrosion. As a result, there is a drawback that a semiconductor device cannot guarantee long-term reliability.
【０００４】また、無機充填剤を高充填することによ
り、樹脂分の割合を少なくし、樹脂組成物の低吸湿化を
図ることができるが、無機質充填剤の高充填化に伴い流
動性が著しく損なわれるばかりでなく、樹脂等の有機分
と無機質充填剤との界面が多くなるため、内部樹脂クラ
ックがその界面を伝って外部樹脂クラックへと進行する
という欠点があった。Further, by highly filling the inorganic filler, the proportion of the resin component can be reduced and the moisture absorption of the resin composition can be reduced. However, the fluidity is remarkably increased as the inorganic filler is highly filled. Not only is it damaged, but the interface between the organic components such as the resin and the inorganic filler is increased, so that the internal resin crack propagates through the interface and progresses to the external resin crack.
【０００５】本発明は、上記の欠点を解消するためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性、半田耐熱性、成形性、流動性、熱伝導性に優
れ、封止樹脂と半導体チップあるいは封止樹脂とリード
フレームとの間の剥がれや、内部樹脂クラックの発生が
なく、また電極の腐蝕による断線や水分によるリーク電
流の発生もなく、長期信頼性を保証できるエポキシ樹脂
組成物および半導体封止装置を提供しようとするもので
ある。The present invention has been made in order to solve the above-mentioned drawbacks and has little influence of moisture absorption, and is particularly excellent in moisture resistance after solder bath immersion, solder heat resistance, moldability, fluidity and thermal conductivity. Assures long-term reliability without peeling between the encapsulating resin and semiconductor chip or between the encapsulating resin and the lead frame, and without the occurrence of internal resin cracks, wire breakage due to electrode corrosion, or leak current due to moisture. It is intended to provide an epoxy resin composition and a semiconductor encapsulation device that can be used.
【０００６】[0006]
【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、特定のエポキ
シ樹脂、特定のシランカップリング剤および複合シリカ
粉末を用いることによって、耐湿性、半田耐熱性、成形
性、流動性、熱伝導性に優れた樹脂組成物が得られるこ
とを見いだし、本発明を完成したものである。As a result of intensive studies aimed at achieving the above object, the present inventors have found that moisture resistance is improved by using a specific epoxy resin, a specific silane coupling agent and a composite silica powder. It was found that a resin composition having excellent properties, solder heat resistance, moldability, fluidity, and thermal conductivity can be obtained, and the present invention has been completed.
【０００７】即ち、本発明は、（Ａ）次の一般式で示さ
れるビフェニル型エポキシ樹脂、That is, the present invention provides (A) a biphenyl type epoxy resin represented by the following general formula,
【０００８】[0008]
【化５】 （Ｂ）フェノール樹脂、（Ｃ）有機塩基を極微量添加し
た、次の一般式で示されるエポキシ基を有するシランカ
ップリング剤、[Chemical 5] (B) a phenol resin, (C) an silane coupling agent having an epoxy group represented by the following general formula, to which an organic base is added in a very small amount,
【０００９】[0009]
【化６】Ｒ1 −Ｃn Ｈ2n−Ｓi （ＯＲ2 ）3 （但し、式中Ｒ1 はエポキシ基を有する原子団を、Ｒ2
はメチル基又はエチル基を、n は0 又は1 以上の整数を
それぞれ表す）（Ｄ）最大粒径が100 μm 以下の溶融球
状シリカ粉末及び最大粒径が100 μm 以下の結晶性シリ
カ粉末からなる複合シリカ粉末、（Ｅ）硬化促進剤を必
須成分とし、全体の樹脂組成物に対して前記（Ｄ）の複
合シリカ粉末を25〜90重量％の割合で含有してなること
を特徴とするエポキシ樹脂組成物である。また、このエ
ポキシ樹脂組成物の硬化物によって、半導体チップが封
止されてなることを特徴とする半導体封止装置である。Embedded image R 1 —C n H 2n —Si (OR 2 ) 3 (wherein R 1 is an atomic group having an epoxy group, R 2
Represents a methyl group or an ethyl group, and n represents an integer of 0 or 1 or more) (D) Consists of fused spherical silica powder having a maximum particle size of 100 μm or less and crystalline silica powder having a maximum particle size of 100 μm or less An epoxy characterized by comprising a composite silica powder and (E) a curing accelerator as essential components, and containing the composite silica powder of (D) in a proportion of 25 to 90% by weight with respect to the entire resin composition. It is a resin composition. A semiconductor encapsulation device is obtained by encapsulating a semiconductor chip with a cured product of this epoxy resin composition.
【００１０】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
【００１１】本発明に用いる（Ａ）エポキシ樹脂は、前
記の一般式化５で示されるビフェニル型エポキシ樹脂が
使用される。また、このエポキシ樹脂には、ノボラック
系エポキシ樹脂、エピビス系エポキシ樹脂、その他の公
知のエポキシ樹脂を併用することができる。As the (A) epoxy resin used in the present invention, the biphenyl type epoxy resin represented by the above general formula 5 is used. In addition, a novolac-based epoxy resin, an epibis-based epoxy resin, and other known epoxy resins can be used in combination with this epoxy resin.
【００１２】本発明に用いる（Ｂ）フェノール樹脂とし
ては、前記（Ａ）のエポキシ樹脂のエポキシ基と反応し
得るフェノール性水酸基を分子中に2 個以上有するもの
であれば特に制限するものではない。具体的な化合物と
して例えばThe (B) phenol resin used in the present invention is not particularly limited as long as it has at least two phenolic hydroxyl groups in the molecule capable of reacting with the epoxy groups of the epoxy resin (A). . As a specific compound, for example,
【００１３】[0013]
【化７】 （但し、n は0 又は1 以上の整数を表す）[Chemical 7] (However, n represents 0 or an integer of 1 or more)
【００１４】[0014]
【化８】 （但し、n は0 又は1 以上の整数を表す）Embedded image (However, n represents 0 or an integer of 1 or more)
【００１５】[0015]
【化９】 （但し、n は0 又は1 以上の整数を表す）[Chemical 9] (However, n represents 0 or an integer of 1 or more)
【００１６】[0016]
【化１０】 （但し、n は0 又は1 以上の整数を表す）[Chemical 10] (However, n represents 0 or an integer of 1 or more)
【００１７】[0017]
【化１１】 （但し、n は0 又は1 以上の整数を表す）等が挙げら
れ、これらは単独又は混合して使用することができる。[Chemical 11] (However, n represents 0 or an integer greater than or equal to 1) etc., These can be used individually or in mixture.
【００１８】本発明に用いる（Ｃ）有機塩基を極微量添
加した、エポキシ基を有するシランカップリング剤とし
ては、前記の一般式化６で示されるものが使用される。
具体的なものとして、例えば、As the silane coupling agent having an epoxy group to which the organic base (C) used in the present invention is added, a compound represented by the above general formula 6 is used.
As a concrete example, for example,
【００１９】[0019]
【化１２】 [Chemical 12]
【００２０】[0020]
【化１３】 等が挙げられ、これらは単独又は混合して使用すること
ができる。[Chemical 13] Etc., and these can be used alone or in combination.
【００２１】このシランカップリング剤には極微量の有
機塩基を添加処理することが重要である。有機塩基で処
理することによって加水分解性を高めることができる。
ここで添加処理する有機塩基としては、ジメチルアミ
ン、ジエチルアミン、ピリジン、キノリン、ピペリジン
等の環状有機塩基を挙げることができ、これらは単独又
は2 種以上混合して使用することができる。有機塩基の
添加配合量は、シランカップリング剤に対して0.0005〜
0.05重量％の範囲内で使用することが望ましい。この配
合量が0.0005重量％未満ではシランカップリング剤の加
水分解を十分に促進することができず、また、0.05重量
％を超えると耐湿信頼性が低下して好ましくない。It is important to add an extremely small amount of organic base to the silane coupling agent. The hydrolyzability can be increased by treating with an organic base.
Examples of the organic base to be added here include cyclic organic bases such as dimethylamine, diethylamine, pyridine, quinoline and piperidine, and these can be used alone or in combination of two or more. The addition amount of the organic base is 0.0005 to the silane coupling agent.
It is desirable to use within the range of 0.05% by weight. If the content is less than 0.0005% by weight, the hydrolysis of the silane coupling agent cannot be sufficiently promoted, and if it exceeds 0.05% by weight, the moisture resistance reliability decreases, which is not preferable.
【００２２】本発明に用いる（Ｄ）複合シリカ粉末とし
ては、不純物濃度が低く最大粒径が100 μm 以下で、平
均粒径30μm 以下の溶融球状シリカ粉末と不純物濃度が
低く最大粒径が100 μm 以下で、平均粒径30μm 以下の
結晶シリカ粉末が好ましく使用される。平均粒径が30μ
m を超えると耐湿性および成形性が劣り好ましくない。
複合シリカ粉末の配合割合は、全体の樹脂組成物に対し
て25〜90重量％含有するように配合することが好まし
い。その割合が25重量％未満では樹脂組成物の吸湿性が
高く、半田浸漬後の耐湿性に劣り、また90重量％を超え
ると極端に流動性が悪くなり、成形性に劣り好ましくな
い。また、結晶シリカ粉末の割合が全体の樹脂組成物に
対して20重量％以上含有するように配合すると十分な熱
伝導性を得ることができる。これらの複合シリカ粉末
に、シランカップリング剤に有機塩基を添加し、直ちに
ヘンシェルミキサー、スーパーミキサー等で処理を行う
と均一に表面処理ができ、その効果が十分に発揮でき
る。The (D) composite silica powder used in the present invention includes a fused spherical silica powder having a low impurity concentration and a maximum particle size of 100 μm or less and an average particle size of 30 μm or less, and a low impurity concentration and a maximum particle size of 100 μm. In the following, crystalline silica powder having an average particle size of 30 μm or less is preferably used. Average particle size is 30μ
If it exceeds m, moisture resistance and moldability are poor, which is not preferable.
The compounding ratio of the composite silica powder is preferably 25 to 90% by weight based on the total resin composition. When the proportion is less than 25% by weight, the hygroscopicity of the resin composition is high and the moisture resistance after solder immersion is poor, and when it exceeds 90% by weight, the fluidity is extremely deteriorated and the moldability is poor, which is not preferable. Further, when the content of the crystalline silica powder is 20 wt% or more based on the total resin composition, sufficient thermal conductivity can be obtained. By adding an organic base to a silane coupling agent to these composite silica powders and immediately treating them with a Henschel mixer, a super mixer or the like, the surface can be uniformly treated and the effect can be sufficiently exhibited.
【００２３】本発明に用いる（Ｅ）硬化促進剤として
は、リン系硬化促進剤、イミダゾール系硬化促進剤、Ｄ
ＢＵ系硬化促進剤その他の硬化促進剤等を広く使用する
ことができる。これらは単独又は2 種以上併用すること
ができる。硬化促進剤の配合割合は、全体の樹脂組成物
に対して0.01〜5 重量％含有するように配合することが
望ましい。その割合が0.01重量％未満では樹脂組成物の
ゲルタイムが長く、硬化特性も悪くなり、また、5 重量
％を超えると極端に流動性が悪くなって成形性に劣り、
さらに電気特性も悪くなり耐湿性に劣り好ましくない。As the curing accelerator (E) used in the present invention, a phosphorus curing accelerator, an imidazole curing accelerator, D
A wide range of BU-based curing accelerators and other curing accelerators can be used. These can be used alone or in combination of two or more kinds. It is desirable that the curing accelerator is blended in an amount of 0.01 to 5% by weight based on the total resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition will be long and the curing characteristics will be poor, and if it exceeds 5% by weight, the fluidity will be extremely poor and the moldability will be poor.
Furthermore, the electrical characteristics are poor and the moisture resistance is poor, which is not preferable.
【００２４】本発明のエポキシ樹脂組成物は、前述した
特定のエポキシ樹脂、フェノール樹脂、有機基を微量配
合した特定のシランカップリング剤、複合シリカ粉末お
よび硬化促進剤を必須成分とするが、本発明の目的に反
しない限度において、また必要に応じて、例えば天然ワ
ックス類、合成ワックス類、直鎖脂肪酸の金属塩、酸ア
ミド類、エステル類、パラフィン類等の離型剤、三酸化
アンチモン等の難燃剤、カーボンブラック等の着色剤、
ゴム系やシリコーン系の低応力付与剤等を適宜添加配合
することができる。The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, phenol resin, specific silane coupling agent containing a small amount of an organic group, composite silica powder and a curing accelerator as essential components. Release agents such as natural waxes, synthetic waxes, metal salts of straight-chain fatty acids, acid amides, esters, paraffins, antimony trioxide, etc., as long as they do not violate the object of the invention and as necessary. Flame retardants, colorants such as carbon black,
A rubber-based or silicone-based low stress imparting agent and the like can be appropriately added and blended.
【００２５】本発明のエポキシ樹脂組成物を成形材料と
して調製する場合の一般的方法は、前述した特定のエポ
キシ樹脂、フェノール樹脂、特定のシランカップリング
剤、複合シリカ粉末および硬化促進剤その他の成分を配
合し、ミキサー等によって十分均一に混合した後、さら
に熱ロールによる溶融混合処理またはニーダ等による混
合処理を行い、次いで冷却固化させ適当な大きさに粉砕
して成形材料とすることができる。こうして得られた成
形材料は、半導体装置をはじめとする電子部品或いは電
気部品の封止・被覆・絶縁等に適用すれば優れた特性と
信頼性を付与させることができる。The general method for preparing the epoxy resin composition of the present invention as a molding material is as follows: the specific epoxy resin, the phenol resin, the specific silane coupling agent, the composite silica powder and the curing accelerator and other components. Can be mixed and sufficiently homogenously mixed with a mixer or the like, and further subjected to melt mixing treatment with a hot roll or mixing treatment with a kneader or the like, and then cooled and solidified to be pulverized to an appropriate size to obtain a molding material. When the molding material thus obtained is applied to sealing, coating, insulation, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.
【００２６】また、本発明の半導体封止装置は、上述の
成形材料を用いて半導体チップを封止することにより容
易に製造することができる。封止を行う半導体チップと
しては、例えば集積回路、大規模集積回路、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。封止の最も一般的な方法としては、低圧トラン
スファー成形法があるが、射出成形、圧縮成形、注形等
による封止も可能である。成形材料で封止後加熱して硬
化させ、最終的にはこの硬化物によって封止された半導
体封止装置が得られる。加熱による硬化は、175 ℃以上
に加熱して硬化させることが望ましい。The semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor chip using the above-mentioned molding material. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large scale integrated circuit, a transistor, a thyristor, a diode and the like. The most common method of sealing is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. For curing by heating, it is desirable to heat and cure at 175 ° C or higher.
【００２７】[0027]
【作用】本発明のエポキシ樹脂組成物および半導体封止
装置は、特定のエポキシ樹脂、フェノール樹脂、有機塩
基を極微量添加した特定のシランカップリング剤、複合
シリカ粉末および硬化促進剤を用いることによって、樹
脂組成物の吸水性を低減し、成形性、流動性、熱機械的
特性と低応力性が向上し、半田浸漬、半田リフロー後の
樹脂クラックの発生がなくなり、良好な熱伝導性を示
し、耐湿性劣化が少なくなるものである。The epoxy resin composition and the semiconductor encapsulation device of the present invention are obtained by using a specific epoxy resin, a phenol resin, a specific silane coupling agent containing a trace amount of an organic base, a composite silica powder and a curing accelerator. , Reduces the water absorption of the resin composition, improves moldability, fluidity, thermomechanical properties and low stress, eliminates resin cracks after solder immersion and solder reflow, and exhibits good thermal conductivity. The moisture resistance is less deteriorated.
【００２８】[0028]
【実施例】次に本発明を実施例によって説明するが、本
発明はこれらの実施例によって限定されるものではな
い。以下の実施例および比較例において「％」とは「重
量％」を意味する。EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following examples and comparative examples, “%” means “% by weight”.
【００２９】実施例１ 溶融球状シリカ粉末（最大粒径100 μm 以下、平均粒径
20μm ）54％、微細な溶融球状シリカ粉末（平均粒径0.
5 μm ）10％、結晶シリカ粉末（最大粒径100μm 以
下、平均粒径10μm ）20％からなる複合シリカ粉末をヘ
ンシェルミキサーに入れ、攪拌しながら前述した化１２
のシランカップリング剤0.4 ％、ジエチルアミン4 ×10
-4％を加えて複合シリカ粉末の表面処理をした。Example 1 Fused spherical silica powder (maximum particle size of 100 μm or less, average particle size
20 μm) 54%, fine fused spherical silica powder (average particle size 0.
5 μm) 10% and crystalline silica powder (maximum particle size 100 μm or less, average particle size 10 μm) 20% were put into a Henschel mixer and mixed with the above-mentioned chemical compound 12.
Silane coupling agent 0.4%, diethylamine 4 × 10
-4 % was added to the surface of the composite silica powder.
【００３０】次に前述した化５のビフェニル型エポキシ
樹脂6.2 ％、テトラブロモビスフェノールＡ型エポキシ
樹脂1.5 ％、前述した化７のフェノールノボラック樹脂
1.5％、前述した化８のフェノールアラルキル樹脂3.5
％、トリフェニルホスフィン0.2 ％、カルナバワックス
類0.4 ％、カーボンブラック0.3 ％、三酸化アンチモン
2.0 ％を常温で混合し、さらに70〜100 ℃で混練冷却し
た後、粉砕して成形材料（Ａ）を製造した。Next, 6.2% of the above-mentioned biphenyl type epoxy resin of the chemical formula 5, 1.5% of tetrabromobisphenol A type epoxy resin, and the above-mentioned phenol novolac resin of the chemical formula 7
1.5%, the above-mentioned phenol aralkyl resin of Chemical formula 3.5
%, Triphenylphosphine 0.2%, carnauba wax 0.4%, carbon black 0.3%, antimony trioxide
2.0% was mixed at room temperature, further kneaded and cooled at 70 to 100 ° C., and then pulverized to produce a molding material (A).
【００３１】実施例２〜３ 表１に示した組成で実施例１と同様にして成形材料
（Ｂ）及び（Ｃ）を製造した。Examples 2 to 3 Molding materials (B) and (C) having the compositions shown in Table 1 were produced in the same manner as in Example 1.
【００３２】比較例１〜３ 表１に示した組成で実施例１と同様にして成形材料
（Ｄ）、（Ｅ）及び（Ｆ）を製造した。Comparative Examples 1 to 3 Molding materials (D), (E) and (F) having the compositions shown in Table 1 were produced in the same manner as in Example 1.
【００３３】こうして製造した成形材料（Ａ）〜（Ｆ）
を用いて 170℃に加熱した金型内にトランスファー注
入、半導体チップを封止し硬化させて半導体封止装置を
製造した。これらの半導体封止装置について、諸試験を
行ったのでその結果を表２に示したが、本発明のエポキ
シ樹脂組成物および半導体封止装置は、耐湿性、半田耐
熱性、成形性等に優れており、本発明の顕著な効果を確
認することができた。Molding materials (A) to (F) thus produced
Was used to transfer transfer into a mold heated to 170 ° C., and the semiconductor chip was sealed and cured to manufacture a semiconductor sealing device. Various tests were performed on these semiconductor encapsulation devices, and the results are shown in Table 2. The epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance, solder heat resistance, moldability, and the like. Therefore, the remarkable effect of the present invention could be confirmed.
【００３４】[0034]
【表１】 [Table 1]
【００３５】[0035]
【表２】 ＊1 ：ＥＭＭＩ−Ｉ−６６に準じてスパイラルフロー測定した（175 ℃）。 ＊2 ：高化式フロー粘度（175 ℃）。 ＊3 ：175 ℃，80kg／cm2 ，2 分間のトランスファー成形によって得られた成形 品（試験片）をつくり、175 ℃，8 時間の後硬化を行い、ＪＩＳ−Ｋ−６９１１ に準じて試験した。 ＊4 ：＊3 と同様な成形品を作り、175 ℃，8 時間の後硬化を行い、適当な大き さの試験片とし、熱機械分析装置を用いて測定した。 ＊5 ：φ100 ，25 mm 厚の成形品を作り、熱伝導率計を用いて測定した。 ＊6 ，＊7 ：5.3 ×5.3mm チップをＶＱＦＰ80pin （12×12×1.4mm ）パッケー ジに納め、成形材料を用いて175 ℃，2 分間トランスファー成形した後、175 ℃ ，8 時間の後硬化を行った。こうして得た半導体封止装置を85℃，85％，48時間 の吸湿処理した後、増加した重量によって計算した。また、これをエアーリフロ ーマシン（Ｍax 240℃）に通し、外部および内部クラックの有無を調査した。[Table 2] * 1: Spiral flow measurement (175 ° C) according to EMMI-I-66. * 2: Higher flow viscosity (175 ° C). * 3: A molded product (test piece) obtained by transfer molding at 175 ° C, 80 kg / cm 2 for 2 minutes was prepared, post-cured at 175 ° C for 8 hours, and tested according to JIS-K-6911. . * 4: A molded product similar to * 3 was made, post-cured at 175 ° C for 8 hours, and a test piece of appropriate size was measured using a thermomechanical analyzer. * 5: A 100 mm diameter, 25 mm thick molded product was made and measured using a thermal conductivity meter. * 6, * 7: A 5.3 x 5.3 mm chip was placed in a VQFP 80pin (12 x 12 x 1.4 mm) package, transfer molded using the molding material for 2 minutes at 175 ° C, and then post-cured at 175 ° C for 8 hours. went. The semiconductor encapsulation device thus obtained was subjected to moisture absorption treatment at 85 ° C, 85% for 48 hours, and then calculated by the increased weight. In addition, this was passed through an air reflow machine (Max 240 ° C) and examined for external and internal cracks.
【００３６】[0036]
【発明の効果】以上の説明および表２から明らかなよう
に、本発明のエポキシ樹脂組成物および半導体封止装置
は、耐湿性、半田耐熱性、成形性、熱伝導性に優れ、ま
た、薄型パッケージ等の充填性にも優れ、吸湿による影
響が少なく、放熱性が良好でしかも長期間にわたって信
頼性を保証することができる。As is clear from the above description and Table 2, the epoxy resin composition and the semiconductor encapsulating device of the present invention are excellent in moisture resistance, solder heat resistance, moldability and thermal conductivity, and are thin. It is excellent in the filling property of the package and so on, is less affected by moisture absorption, has good heat dissipation, and can guarantee reliability for a long period of time.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/29 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 23/29 23/31
Claims (2)
型エポキシ樹脂、 【化１】 （Ｂ）フェノール樹脂、（Ｃ）有機塩基を極微量添加し
た、次の一般式で示されるエポキシ基を有するシランカ
ップリング剤、 【化２】Ｒ1 −Ｃn Ｈ2n−Ｓi （ＯＲ2 ）3 （但し、式中Ｒ1 はエポキシ基を有する原子団を、Ｒ2
はメチル基又はエチル基を、n は0 又は1 以上の整数を
それぞれ表す）（Ｄ）最大粒径が100 μm 以下の溶融球
状シリカ粉末及び最大粒径が100 μm 以下の結晶性シリ
カ粉末からなる複合シリカ粉末、（Ｅ）硬化促進剤を必
須成分とし、全体の樹脂組成物に対して前記（Ｄ）の複
合シリカ粉末を25〜90重量％の割合で含有してなること
を特徴とするエポキシ樹脂組成物。1. (A) a biphenyl type epoxy resin represented by the following general formula: (B) Phenolic resin, (C) Organic base-added silane coupling agent having an epoxy group represented by the following general formula: embedded image R 1 —C n H 2n —Si (OR 2 ) 3 (wherein R 1 is an atomic group having an epoxy group, R 2
Represents a methyl group or an ethyl group, and n represents an integer of 0 or 1 or more) (D) Consists of fused spherical silica powder having a maximum particle size of 100 μm or less and crystalline silica powder having a maximum particle size of 100 μm or less An epoxy characterized by comprising a composite silica powder and (E) a curing accelerator as essential components, and containing the composite silica powder of (D) in a proportion of 25 to 90% by weight with respect to the entire resin composition. Resin composition.
型エポキシ樹脂、 【化３】 （Ｂ）フェノール樹脂、（Ｃ）有機塩基を極微量添加し
た、次の一般式で示されるエポキシ基を有するシランカ
ップリング剤、 【化４】Ｒ1 −Ｃn Ｈ2n−Ｓi （ＯＲ2 ）3 （但し、式中Ｒ1 はエポキシ基を有する原子団を、Ｒ2
はメチル基又はエチル基を、n は0 又は1 以上の整数を
それぞれ表す）（Ｄ）最大粒径が100 μm 以下の溶融球
状シリカ粉末及び最大粒径が100 μm 以下の結晶性シリ
カ粉末からなる複合シリカ粉末、（Ｅ）硬化促進剤を必
須成分とし、全体の樹脂組成物に対して前記（Ｄ）の複
合シリカ粉末粉末を25〜90重量％の割合で含有したエポ
キシ樹脂組成物の硬化物によって、半導体チップが封止
されてなることを特徴とする半導体封止装置。2. A biphenyl-type epoxy resin represented by the following general formula: A silane coupling agent having an epoxy group represented by the following general formula, wherein (B) a phenol resin and (C) an organic base are added in an extremely small amount: embedded image R 1 —C n H 2n —Si (OR 2 ) 3 (wherein R 1 is an atomic group having an epoxy group, R 2
Represents a methyl group or an ethyl group, and n represents an integer of 0 or 1 or more) (D) Consists of fused spherical silica powder having a maximum particle size of 100 μm or less and crystalline silica powder having a maximum particle size of 100 μm or less A cured product of an epoxy resin composition containing the composite silica powder and (E) a curing accelerator as essential components, and containing the composite silica powder of (D) in a proportion of 25 to 90% by weight with respect to the entire resin composition. A semiconductor encapsulation device, wherein a semiconductor chip is encapsulated by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6244796A JPH0881542A (en) | 1994-09-13 | 1994-09-13 | Epoxy resin composition and semiconductor device sealed therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6244796A JPH0881542A (en) | 1994-09-13 | 1994-09-13 | Epoxy resin composition and semiconductor device sealed therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0881542A true JPH0881542A (en) | 1996-03-26 |
Family
ID=17124067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6244796A Pending JPH0881542A (en) | 1994-09-13 | 1994-09-13 | Epoxy resin composition and semiconductor device sealed therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0881542A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0881543A (en) * | 1994-09-14 | 1996-03-26 | Toshiba Chem Corp | Epoxy resin composition and semiconductor device sealed therewith |
| KR100543092B1 (en) * | 2002-12-07 | 2006-01-20 | 제일모직주식회사 | Epoxy Molding Compound for Encapsulation of Semiconductor Devices |
| JP2006176792A (en) * | 1997-01-17 | 2006-07-06 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic parts and electronic parts |
| CN102477211A (en) * | 2010-11-25 | 2012-05-30 | 联茂电子股份有限公司 | Halogen-free epoxy resin composition, its film and substrate |
| WO2013032238A2 (en) * | 2011-08-31 | 2013-03-07 | Lg Innotek Co., Ltd. | Epoxy resin compound and radiant heat circuit board using the same |
| WO2016136075A1 (en) * | 2015-02-27 | 2016-09-01 | 株式会社日立製作所 | Electrical insulation resin composition, electrical insulation resin cured product using same, and receiving and transforming equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04198278A (en) * | 1990-11-26 | 1992-07-17 | Shin Etsu Chem Co Ltd | Method of surface treatment of inorganic particle, and thermosetting resin composition |
| JPH04226123A (en) * | 1990-06-18 | 1992-08-14 | Toray Ind Inc | Epoxy resin composition for sealing semiconductor |
| JPH04325543A (en) * | 1991-04-24 | 1992-11-13 | Shin Etsu Chem Co Ltd | Epoxy resin composition and cured article thereof |
| JPH04325517A (en) * | 1991-04-26 | 1992-11-13 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing |
-
1994
- 1994-09-13 JP JP6244796A patent/JPH0881542A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226123A (en) * | 1990-06-18 | 1992-08-14 | Toray Ind Inc | Epoxy resin composition for sealing semiconductor |
| JPH04198278A (en) * | 1990-11-26 | 1992-07-17 | Shin Etsu Chem Co Ltd | Method of surface treatment of inorganic particle, and thermosetting resin composition |
| JPH04325543A (en) * | 1991-04-24 | 1992-11-13 | Shin Etsu Chem Co Ltd | Epoxy resin composition and cured article thereof |
| JPH04325517A (en) * | 1991-04-26 | 1992-11-13 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0881543A (en) * | 1994-09-14 | 1996-03-26 | Toshiba Chem Corp | Epoxy resin composition and semiconductor device sealed therewith |
| JP2006176792A (en) * | 1997-01-17 | 2006-07-06 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic parts and electronic parts |
| KR100543092B1 (en) * | 2002-12-07 | 2006-01-20 | 제일모직주식회사 | Epoxy Molding Compound for Encapsulation of Semiconductor Devices |
| CN102477211A (en) * | 2010-11-25 | 2012-05-30 | 联茂电子股份有限公司 | Halogen-free epoxy resin composition, its film and substrate |
| WO2013032238A2 (en) * | 2011-08-31 | 2013-03-07 | Lg Innotek Co., Ltd. | Epoxy resin compound and radiant heat circuit board using the same |
| WO2013032238A3 (en) * | 2011-08-31 | 2013-04-25 | Lg Innotek Co., Ltd. | Epoxy resin compound and radiant heat circuit board using the same |
| US20140318835A1 (en) * | 2011-08-31 | 2014-10-30 | Lg Innotek Co., Ltd. | Epoxy resin compound and radiant heat circuit board using the same |
| US9974172B2 (en) | 2011-08-31 | 2018-05-15 | Lg Innotek Co., Ltd. | Epoxy resin compound and radiant heat circuit board using the same |
| WO2016136075A1 (en) * | 2015-02-27 | 2016-09-01 | 株式会社日立製作所 | Electrical insulation resin composition, electrical insulation resin cured product using same, and receiving and transforming equipment |
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