JPH11158353A - Epoxy resin composition and device for sealing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain the subject composition having excellent moisture resistance, IR-resistant reflowability, soldering heat resistance, moldability and high heat conductivity, not causing the separation of the sealed resin from a semiconductor chip, the generation of inner resin cracks, etc., and capable of insuring reliability for a long period by using a specific epoxy resin, a specific silane coupling agent and a specific filler. SOLUTION: This epoxy resin composition comprises (A) an anthracene type epoxy resin of formula I [R<1> -R<4> are each Cm H2m+1 ; (m) is an integer of 0 or >=1), (B) a phenolic resin for example, a compound of formula II [(n) is (m)]}, (C) a primary or secondary amine-based silane coupling agent of the formula: R<5> -Cn H2n -Si(OR<6> )3 (R<5> is an atomic group having an amino group; R<6> is methyl or ethyl), (D) aluminum nitride powder having the maximum particle diameter of <=100 μm, and (E) a curing accelerator, as essential components. The component D is compounded in an amount of 40-95 wt.% based on the total amount of the resin composition. The component E is preferably compounded in an amount of 0.01-5 wt.% based on the total amount of the resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in moisture resistance, IR reflow resistance, solder heat resistance, moldability and high thermal conductivity, and a semiconductor sealing device.

[0002]

2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as the development of high integration and high reliability technologies, automation of the mounting process of semiconductor devices has been promoted. For example, when a flat package type semiconductor device is mounted on a circuit board, soldering has conventionally been performed for each lead pin. Recently, however, a solder immersion method and an IR reflow method have become mainstream. In addition, in order to release heat from a circuit, a case in which a high heat conduction property is required for a sealing material itself is increasing.

[0003]

A semiconductor device encapsulated with a resin composition comprising a conventional epoxy resin such as a novolak type epoxy resin, a novolak type phenol resin and an inorganic filler, when passed through an IR reflow furnace, is entirely replaced with a semiconductor device. Is heated to 240 ° C. or more, and thus has a drawback that the moisture resistance decreases. In particular, when the semiconductor device that has absorbed moisture is exposed to IR reflow, peeling between the sealing resin and the semiconductor chip, or between the sealing resin and the lead frame, and internal cracking of the resin occur, causing significant deterioration of the moisture resistance and causing corrosion of the electrode. As a result, the semiconductor device has a drawback that long-term reliability cannot be guaranteed.

The following naphthalene skeleton-containing epoxy resins that are relatively frequently used are:

[0005]

Embedded image Compared to conventional novolak-type epoxy resins and biphenyl-type epoxy resins, they have the advantage of high toughness, but have a low epoxy equivalent, and it has been difficult to reduce the moisture absorption of resin compositions using these.

In addition, if fused silica, which is often used as a filler, is used, satisfactory thermal conductivity cannot be obtained, and if crystalline silica having relatively good thermal conductivity is used,
There is a disadvantage that IR reflow resistance is reduced.

The present invention has been made in order to solve the above-mentioned disadvantages, and has little influence of moisture absorption. In particular, the present invention has the following characteristics: Excellent thermal conductivity, no peeling between the sealing resin and the semiconductor chip or between the sealing resin and the lead frame, no occurrence of internal resin cracks, no breakage due to electrode corrosion and no leakage current due to moisture, An object of the present invention is to provide an epoxy resin composition and a semiconductor encapsulation device that can guarantee long-term reliability.

[0008]

Means for Solving the Problems As a result of diligent research aimed at achieving the above object, the present inventor has found that by using a specific epoxy resin, a specific silane coupling agent, and a specific filler, moisture resistance is improved. It has been found that a resin composition having excellent heat resistance, IR reflow resistance, solder heat resistance, moldability, high thermal conductivity and the like can be obtained, and the present invention has been completed.

That is, the present invention provides (A) an anthracene epoxy resin represented by the following general formula:

[0010]

Embedded image (Wherein, R ^{1 to} R ⁴ are the same or different
_m H _{2m + 1} group, wherein _{m in the} group represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a primary or secondary amine silane coupling agent represented by the following general formula: ,

[0011]

Embedded image R ⁵ —C _n H _2n —Si (OR ⁶ ) ₃ (where R ⁵ is an atomic group having an amino group, R ⁶ is a methyl group or an ethyl group, and n is 0 or 1 or more) (D) an aluminum nitride powder having a maximum particle diameter of 100 μm or less and (E) a hardening accelerator as essential components, and the aluminum nitride powder of (D) is added to the entire resin composition by 40%. ~
An epoxy resin composition characterized in that it is contained in a proportion of 95% by weight. A semiconductor sealing device is characterized in that a semiconductor chip is sealed with a cured product of the epoxy resin composition.

Hereinafter, the present invention will be described in detail.

As the epoxy resin (A) used in the present invention, those represented by the aforementioned general formula (6) are used. Specific compounds include, for example,

[0014]

Embedded image Is mentioned. In addition, a novolak-based epoxy resin, an epibis-based epoxy resin, a biphenyl-type epoxy resin, and other commonly known epoxy resins can be used in combination with the epoxy resin.

The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups capable of reacting with the epoxy group of the epoxy resin (A). As a specific compound, for example,

[0016]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0017]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0018]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0019]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0020]

Embedded image (Where n represents 0 or an integer of 1 or more), and these can be used alone or in combination.

As the amine-based silane coupling agent (C) used in the present invention, those represented by the aforementioned general formula 7 are used. The amine may be either a primary or secondary amine, and carbamide is included in the amine silane coupling agent (C) because it acts similarly to the amine.
Specifically, for example,

[0022]

Embedded image

[0023]

Embedded image And the like, and these can be used alone or as a mixture.

A very small amount of an organic base can be added to the silane coupling agent. Hydrolysis can be enhanced by treating with an organic base.Examples of the organic base to be added and treated here include cyclic organic bases such as dimethylamine, diethylamine, pyridine, quinoline, and piperidine, which can be used alone or in combination. Can be used. The compounding ratio of the organic base is desirably used within the range of 0.05 to 5% by weight based on the silane coupling agent. If the amount is less than 0.05% by weight, hydrolysis of the silane coupling agent cannot be sufficiently promoted, and if it exceeds 5% by weight, the moisture resistance reliability is undesirably lowered.

As the aluminum nitride powder (D) used in the present invention, an aluminum nitride powder having a low impurity concentration, a maximum particle diameter of 100 μm or less, and an average particle diameter of 30 μm or less is preferably used. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are poor, which is not preferable. The compounding ratio of the aluminum nitride powder is preferably 40 to 95% by weight based on the whole resin composition. If the proportion is less than 40% by weight, the resin composition has a high hygroscopicity and is inferior in moisture resistance after IR reflow. When an organic base is added to these aluminum nitride powders as a silane coupling agent and immediately treated with a Henschel mixer, a super mixer, or the like, the surface can be uniformly treated and the effect can be sufficiently exhibited.

The (E) curing accelerator used in the present invention includes a phosphorus-based curing accelerator, an imidazole-based curing accelerator, and D
BU-based curing accelerators and other curing accelerators can be widely used. These can be used alone or in combination of two or more. It is desirable that the curing accelerator is blended so as to contain 0.01 to 5% by weight based on the whole resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition will be long and the curing properties will be poor. If it exceeds 5% by weight, the fluidity will be extremely poor and the moldability will be poor,
Further, the electrical properties are also poor, and the moisture resistance is poor, which is not preferable.

The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, phenol resin, specific silane coupling agent, aluminum nitride powder and a hardening accelerator as essential components, but does not violate the object of the present invention. To the extent possible and if necessary, for example, natural waxes, synthetic waxes, metal salts of straight-chain fatty acids, release agents such as acid amides, esters, paraffins, flame retardants such as antimony trioxide, carbon black And the like, and a rubber-based or silicone-based low-stress imparting agent and the like can be appropriately added and blended.

The general method for preparing the epoxy resin composition of the present invention as a molding material includes the above-mentioned specific epoxy resin, phenol resin, aluminum nitride powder treated with a silane coupling agent, a curing accelerator, and other additives. After the components are blended and mixed sufficiently uniformly with a mixer or the like, a melt-mixing treatment with a hot roll or a mixing treatment with a kneader or the like is further performed, then solidified by cooling and pulverized to an appropriate size to obtain a molding material. . If the molding material thus obtained is applied to sealing, coating, insulating, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.

Further, the semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the molding material described above. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or more.

The epoxy resin composition and the semiconductor encapsulation device of the present invention use a specific epoxy resin, a phenol resin, a specific silane coupling agent, aluminum nitride powder and a curing accelerator to obtain a water absorbing property of the resin composition. Reduces moldability, flowability, and thermomechanical properties.
This eliminates the occurrence of resin cracks after solder immersion and IR reflow, reduces deterioration of moisture resistance, and enhances the reliability of the semiconductor encapsulation device due to the high thermal conductivity of the epoxy resin composition.

[0031]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. "%" In the following Examples and Comparative Examples
Means "% by weight".

Example 1 90% of aluminum nitride powder (maximum particle size: 100 μm or less) was put into a Henschel mixer, and the mixture was stirred while stirring.
0.4% of a silane coupling agent of
× 10 ^-4 % was added to perform surface treatment of the aluminum nitride powder.

Next, 1.0% of the above-mentioned anthracene-type epoxy resin of Chemical Formula 9, 2.6% of the biphenyl-type epoxy resin shown in Chemical Formula 16 below,

[0034]

Embedded image 0.7% of tetrabromobisphenol A type epoxy resin,
0.8% of the phenol resin of the above-mentioned chemical formula 9,
Phenolic resin 2.8%, triphenylphosphine 0.2
%, Carnauba wax 0.3%, carbon black 0.2
% And antimony trioxide at room temperature, kneaded and cooled at 70 to 100 ° C., and pulverized to produce a molding material (A).

Example 2 90% of aluminum nitride powder (maximum particle size: 100 μm or less) was placed in a Henschel mixer, and the mixture was stirred while stirring.
0.4% of a silane coupling agent of
× 10 ^-4 % was added to perform surface treatment of the aluminum nitride powder.

Next, 1.0% of the above-mentioned anthracene epoxy resin of Chemical Formula 8, 2.6% of the biphenyl type epoxy resin of Chemical Formula 16 used in Example 1, and tetrabromobisphenol A
0.7% epoxy resin, phenol resin
0.8%, 2.8% of the above-mentioned phenol resin of formula 11, 0.2% of triphenylphosphine, 0.3 of carnauba wax
%, Carbon black 0.2%, and antimony trioxide
1.0% were mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and pulverized to produce a molding material (B).

Comparative Example 1 90% of an aluminum nitride powder (maximum particle size: 100 μm or less) was put into a Henschel mixer, and the mixture was stirred as described above.
0.4% of a silane coupling agent of
× 10 ^-4 % was added to perform surface treatment of the aluminum nitride powder.

In Example 1, 3.6% of the biphenyl type epoxy resin of formula 16, 3.6% of tetrabromobisphenol A type epoxy resin, 0.8% of phenol resin of formula 9, 2.8% of the phenol resin of formula 10 described above, and triphenylphosphine 0.2%, 0.3% of carnauba wax, 0.2% of carbon black and 1.0% of antimony trioxide were mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and pulverized to obtain a molding material (C).

COMPARATIVE EXAMPLE 2 84% of a fused silica powder (maximum particle size of 100 μm or less) was placed in a Henschel mixer, and 0.4% of the above-mentioned silane coupling agent of Chemical Formula 14 and 4 × 10 ^{-4 of} diethylamine were stirred with stirring.
% To give a surface treatment of the fused silica powder.

5.8% of the biphenyl-type epoxy resin of Chemical formula 16, 1.1% of the tetrabromobisphenol-A-type epoxy resin used in Example 1, and 1.1% of the phenol resin of Chemical formula 9 described above.
3%, 4.5% of the above-mentioned phenol resin of formula 11, 0.2% of triphenylphosphine, 0.4% of carnauba wax,
0.3% carbon black and antimony trioxide 2.0
%, Mixed at room temperature, kneaded and cooled at 70 to 100 ° C., and pulverized to produce a molding material (D).

The molding materials (A) to (D) thus produced
Was transferred into a mold heated to 180 ° C., and the semiconductor chip was sealed and cured to manufacture a semiconductor sealing device. Various tests were performed on these semiconductor encapsulation devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor encapsulation device of the present invention showed moisture resistance and IR resistance.
It was excellent in reflow properties, solder heat resistance, moldability, and high thermal conductivity, confirming the remarkable effects of the present invention.

[0042]

[Table 1] * 1: A molded product (specimen) was prepared by transfer molding at 180 ° C, 80 kg / cm ² for 2 minutes, post-cured at 175 ° C for 8 hours, and tested according to JIS-K-6911. . * 2: A molded article similar to * 1 was prepared, post-cured at 175 ° C for 8 hours, a test piece of appropriate size was measured using a thermomechanical analyzer. * 3, * 4: A QFP (1.4 mm thick) package, which was transfer molded using a molding material at 180 ° C for 2 minutes, was post-cured at 175 ° C for 8 hours. The semiconductor encapsulation device thus obtained was subjected to a moisture absorption treatment at 85 ° C., 85% for 72 hours, and then calculated based on the increased weight. After IR reflow (Max 240 ° C.), the presence or absence of peeling and cracking was examined.

[0043]

As is apparent from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention have a moisture resistance, IR reflow resistance, solder heat resistance, moldability,
It has excellent heat conduction characteristics, is less affected by moisture absorption, can significantly reduce disconnection due to electrode corrosion, generation of leak current due to moisture, and the like, and can guarantee reliability for a long period of time.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/31

Claims (2)

[Claims] (A) An anthracene epoxy resin represented by the following general formula: (Wherein, R ^{1 to} R ⁴ are the same or different
_m H _{2m + 1} group, in which m represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a primary or secondary amine silane coupling agent represented by the following general formula: R ⁵ —C _n H _2n —Si (OR ⁶ ) ₃ (wherein, R ⁵ represents an atomic group having an amino group, R ⁶ represents a methyl group or an ethyl group, and n represents 0 or 1) (D) an aluminum nitride powder having a maximum particle size of 100 μm or less and (E) a curing accelerator as essential components, and the aluminum nitride powder of (D) with respect to the entire resin composition. An epoxy resin composition comprising 40 to 95% by weight. (A) an anthracene epoxy resin represented by the following general formula: (Wherein, R ^{1 to} R ⁴ are the same or different
_m H _{2m + 1} group, in which m represents 0 or an integer of 1 or more) (B) a phenolic resin, (C) a primary or secondary amine silane coupling agent represented by the following general formula: R ⁵ -C _n H _2n -Si (OR ⁶ ) ₃ (wherein R ⁵ is an atomic group having an amino group, R ⁶ is a methyl group or an ethyl group, n is 0 or 1) (D) an aluminum nitride powder having a maximum particle size of 100 μm or less and (E) a curing accelerator as essential components, and the aluminum nitride powder of (D) with respect to the entire resin composition. A semiconductor sealing device wherein a semiconductor chip is sealed with a cured product of an epoxy resin composition contained at a ratio of 40 to 95% by weight.