JPH11349305A - Production of carbonaceous film and film to be treated - Google Patents

Production of carbonaceous film and film to be treated

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Publication number
JPH11349305A
JPH11349305A JP10155461A JP15546198A JPH11349305A JP H11349305 A JPH11349305 A JP H11349305A JP 10155461 A JP10155461 A JP 10155461A JP 15546198 A JP15546198 A JP 15546198A JP H11349305 A JPH11349305 A JP H11349305A
Authority
JP
Japan
Prior art keywords
boron
film
precursor
polyimide
functional group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10155461A
Other languages
Japanese (ja)
Other versions
JP2976024B1 (en
Inventor
Michio Inagaki
道夫 稲垣
Hidetaka Konno
英隆 金野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hokkaido University NUC
Original Assignee
Hokkaido University NUC
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Priority to JP10155461A priority Critical patent/JP2976024B1/en
Application granted granted Critical
Publication of JP2976024B1 publication Critical patent/JP2976024B1/en
Publication of JPH11349305A publication Critical patent/JPH11349305A/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To produce a carbonaceous film without defects in physical properties due to the formation, etc., of holes and having a homogeneous composition by carbonizing a precursor into which a functional group containing boron is introduced into the skeletal structure of a polyimide by heat treatment. SOLUTION: A polyimide is used as a precursor of a carbonaceous film and a functional group containing boron is introduced into the skeletal structure of the polyimide. The objective carbonaceous film containing nitrogen and the boron is produced by carbonizing the precursor by heat treatment. The polyimide used as the precursor regulatively precontains the nitrogen in the molecule and is frequently used as the precursor of a highly oriented carbonaceous material. When the functional group containing the boron is introduced into the precursor, the precursor is readily carbonized by the heat treatment and the nitrogen and boron are more densely and uniformly contained in the resultant carbonaceous film. The kind of the functional group containing the boron is not especially limited.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、有機高分子化合物
を炭素化して得られる炭素膜に関し、特に、かかる炭素
膜を得るための前駆体に関する。
The present invention relates to a carbon film obtained by carbonizing an organic polymer compound, and more particularly to a precursor for obtaining such a carbon film.

【0002】[0002]

【従来の技術】炭素材料中の炭素の一部をホウ素や窒素
で置換すると、炭素材料は、耐酸化性等の化学的性質の
みならず、電気的、磁気的及び機械的特性等が変化し、
材料としての多様性が拡がる。
2. Description of the Related Art When a part of carbon in a carbon material is replaced with boron or nitrogen, the carbon material changes not only in chemical properties such as oxidation resistance, but also in electrical, magnetic and mechanical properties. ,
Diversity as a material is expanded.

【0003】例えば、ポリイミド薄膜は、高配向性炭素
材料の前駆体として知られている。以前、本発明者は、
かかるポリイミド薄膜が分子内窒素を含んでおり、12
00℃程度の炭素化温度では、1at%前後の窒素が残
留することを報告した(H. Konno, T. Nakahashi and
M. Inagaki, Carbon, 35, 669(1997) ; T. Nakahashi,
H. Konno and M. Inagaki, Solid State Ionics, in pr
ess)。
For example, a polyimide thin film is known as a precursor of a highly oriented carbon material. Previously, the inventor
Such a polyimide thin film contains intramolecular nitrogen,
It was reported that about 1 at% of nitrogen remained at a carbonization temperature of about 00 ° C (H. Konno, T. Nakahashi and
M. Inagaki, Carbon, 35, 669 (1997); T. Nakahashi,
H. Konno and M. Inagaki, Solid State Ionics, in pr
ess).

【0004】また、本発明者は、この残留窒素が、22
00℃の黒鉛化処理後にも微量に残存し、薄膜の磁気抵
抗やホール係数に大きく影響することを報告した(M. I
nagaki, H. Tachikawa, T. Nakahashi, H. Konno and
Y. Hishiyama, Carbon, in press )。
The inventor of the present invention has reported that the residual nitrogen
It has been reported that trace amounts remain even after graphitization at 00 ° C, which greatly affects the magnetoresistance and Hall coefficient of thin films (M.I.
nagaki, H. Tachikawa, T. Nakahashi, H. Konno and
Y. Hishiyama, Carbon, in press).

【0005】ホウ素及び窒素の含量が多い材料は、BC
N化合物と呼ばれ、種々の方法での合成が試みられてい
る。また、ホウ素や窒素は、黒鉛等に少量ドープされた
場合にも、その黒鉛等の物性を大きく変えることが知ら
れており、各種の注入法が試みられている。
[0005] Materials with a high content of boron and nitrogen are BC
It is called an N compound, and synthesis by various methods has been attempted. Also, it is known that even when boron or nitrogen is doped in a small amount into graphite or the like, it greatly changes the physical properties of the graphite or the like, and various implantation methods have been tried.

【0006】[0006]

【発明が解決しようとする課題】窒素とホウ素とを含有
する炭素膜を作成する最も単純な方法には、窒素を含ん
でいる高分子化合物にホウ素化合物を混合して成膜し、
これを不活性ガス雰囲中で加熱して炭素化する方法があ
る。
The simplest method for producing a carbon film containing nitrogen and boron is to form a film by mixing a boron compound with a polymer compound containing nitrogen.
There is a method of heating this in an inert gas atmosphere to carbonize.

【0007】しかし、かかる方法では、得られる炭素膜
に微小な孔が生成したり、組成が不均質な薄膜になるこ
とがある。
However, in such a method, fine pores may be formed in the obtained carbon film, or a thin film having an inhomogeneous composition may be formed.

【0008】本発明者の研究によると、かかる方法で
は、ホウ素や窒素を含む成分が熱処理によって気散する
と考えられ、窒素とホウ素とを含有する均質な炭素膜を
得るには、熱処置等に工夫を要することがわかった〔金
野、岡、稲垣、ポリイミドからのB,N含有炭素薄膜の
作成(I).混合法、電気化学会第65回大会講演要旨
集、第317頁、3K01、(1998)〕。
According to the study of the present inventor, in such a method, it is considered that components containing boron and nitrogen are diffused by heat treatment, and in order to obtain a uniform carbon film containing nitrogen and boron, it is necessary to use a heat treatment or the like. It was found that a device was required [Kano, Oka, Inagaki, Preparation of B and N-containing carbon thin film from polyimide (I). Proceedings of the 65th Annual Meeting of the Electrochemical Society of Japan, p. 317, 3K01, (1998)].

【0009】本発明は、孔の発生等による物理的欠陥が
無く、組成の均質な炭素膜を、高配向性炭素材料の前駆
体の熱処理によって得ることを目的とする。
An object of the present invention is to obtain a carbon film having a uniform composition without physical defects due to generation of pores or the like by heat treatment of a precursor of a highly oriented carbon material.

【0010】[0010]

【課題を解決するための手段】本発明は、窒素及びホウ
素を含有している炭素膜を得るにあたり、前記炭素膜の
前駆体がポリイミドからなり、前記ホウ素を含む官能基
が前記ポリイミドの骨格構造に導入されており、前記前
駆体を熱処理によって炭素化する、炭素膜の製造方法に
係るものである。
According to the present invention, in obtaining a carbon film containing nitrogen and boron, a precursor of the carbon film is made of polyimide, and the functional group containing boron has a skeleton structure of the polyimide. And a method for producing a carbon film, wherein the precursor is carbonized by heat treatment.

【0011】また、本発明は、窒素及びホウ素を含有し
ている炭素膜を得るための前駆体であり、前記前駆体が
ポリイミドからなり、前記ホウ素を含む官能基が前記ポ
リイミドの骨格構造に導入されており、前記前駆体が熱
処理によって炭素化する、炭素膜を得るための前駆体に
係るものである。
The present invention is also a precursor for obtaining a carbon film containing nitrogen and boron, wherein the precursor comprises polyimide, and the functional group containing boron is introduced into the skeleton structure of the polyimide. The present invention relates to a precursor for obtaining a carbon film, wherein the precursor is carbonized by heat treatment.

【0012】本発明は、一つの有機化合物内に導入され
ている炭素原子以外の異種原子と、別個の有機化合物と
して混合されているかかる異種原子とが、炭素化におけ
る挙動に違いを示すことが見出されたことに起因する。
According to the present invention, a heterogeneous atom other than a carbon atom introduced into one organic compound and such a heterogeneous atom mixed as a separate organic compound show a difference in carbonization behavior. Attributable to what was found.

【0013】本発明者は、分子内に窒素を含むポリイミ
ドを、その骨格構造にホウ素を含む官能基を導入してか
ら炭素化することで、より一層緻密で、均質に窒素とホ
ウ素とを含有する炭素膜が得られることを見出し、本発
明を完成させた。
The inventor of the present invention has proposed that a polyimide containing nitrogen in a molecule is carbonized after introducing a functional group containing boron into its skeleton structure, so that the polyimide containing nitrogen and boron is more densely and homogeneously contained. The present inventors have found that a carbon film can be obtained, and completed the present invention.

【0014】本発明では、ホウ素化合物とポリイミドと
を単に混合して炭素化するよりも、ホウ素を含む官能基
をポリイミドの骨格構造に導入して炭素化する方が、ホ
ウ素と窒素とが炭素膜中に効率よく定着することが突き
止められた。
In the present invention, boron and nitrogen are more likely to form a carbon film by introducing a functional group containing boron into the skeleton structure of the polyimide than by simply mixing the boron compound and the polyimide to carbonize. It was found that it was settled inside efficiently.

【0015】本発明によれば、炭素膜中の炭素の一部
が、ホウ素及び窒素によって、均質に置換され、耐酸化
性等の化学的性質や、電気的、磁気的及び機械的特性等
に優れた炭素膜を得ることができる。
According to the present invention, a part of the carbon in the carbon film is homogeneously replaced by boron and nitrogen, and the chemical properties such as oxidation resistance and the electrical, magnetic and mechanical properties are improved. An excellent carbon film can be obtained.

【0016】本発明にかかる炭素膜は、機能性炭素材料
として有望であり、リチウム2次電池、センサー、半導
体等の製品への応用が期待される。
The carbon film according to the present invention is promising as a functional carbon material, and is expected to be applied to products such as lithium secondary batteries, sensors, and semiconductors.

【0017】[0017]

【発明の実施の形態】図面を参照して、本発明をより詳
細に説明する。本発明では、炭素膜の前駆体としてポリ
イミドを用いる。このポリイミドの骨格構造には、ホウ
素を含む官能基が導入されている。本発明にかかる窒素
及びホウ素を含有している炭素膜は、この前駆体を熱処
理して炭素化することで得られる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail with reference to the drawings. In the present invention, polyimide is used as a precursor of the carbon film. A functional group containing boron is introduced into the skeleton structure of this polyimide. The carbon film containing nitrogen and boron according to the present invention is obtained by heat-treating this precursor to carbonize it.

【0018】本発明で炭素膜の前駆体として用いるポリ
イミドは、予め分子中に窒素を規則的に含んでおり、高
配向性炭素材料の前駆体として最も良く用いられる。
The polyimide used as a precursor of the carbon film in the present invention contains nitrogen in the molecule in advance and is most often used as a precursor of a highly oriented carbon material.

【0019】本発明にかかる炭素膜の前駆体としては、
ポリイミドと同様に、種々の高分子膜も有用である。か
かる高分子材料には、ポリパラフェニレンビニレン、ポ
リオキサジアゾール、ポリパラフェニレンテレフタルア
ミド、ポリアクリルニトリル等の種々の有機高分子化合
物が含まれる。
As the precursor of the carbon film according to the present invention,
Similar to polyimide, various polymer films are also useful. Such polymer materials include various organic polymer compounds such as polyparaphenylene vinylene, polyoxadiazole, polyparaphenylene terephthalamide, and polyacrylonitrile.

【0020】本発明では、ホウ素を含む官能基が前駆体
の骨格構造に導入されている。かかる前駆体は、熱処理
によって容易に炭素化し、得られる炭素膜中には窒素及
びホウ素がより一層緻密で、均質に含有される。
In the present invention, a functional group containing boron is introduced into the skeleton structure of the precursor. Such a precursor is easily carbonized by heat treatment, and nitrogen and boron are more densely and uniformly contained in the obtained carbon film.

【0021】かかるホウ素を含む官能基の種類は、特に
限定されるものではない。したがって、本発明にかかる
前駆体の骨格構造に合わせて、種々の構造の官能基を導
入することができる。
The type of the functional group containing boron is not particularly limited. Therefore, functional groups having various structures can be introduced according to the skeleton structure of the precursor according to the present invention.

【0022】本発明で用いられるポリイミドは、高配向
性炭素材料の前駆体として知られており、分子内に窒素
を規則的に含んでいる。この種の高分子化合物の一つ
に、ピロメリット酸二無水物(PMDA)と4,4′−
ジアミノジフェニルエーテル(DDE)とを重合して得
られる液体状のポリアミック酸を、200℃で脱水イミ
ド化して薄膜とするタイプのものがある。
The polyimide used in the present invention is known as a precursor of a highly oriented carbon material, and contains nitrogen in the molecule regularly. One of such polymer compounds is pyromellitic dianhydride (PMDA) and 4,4'-
There is a type in which a liquid polyamic acid obtained by polymerizing diaminodiphenyl ether (DDE) is dehydrated and imidized at 200 ° C. to form a thin film.

【0023】本発明では、かかるポリイミドを炭素膜の
前駆体として用いるが、かかるポリイミドには、ホウ素
を含む官能基が、そのポリイミドの骨格構造に導入され
ている。かかるホウ素を含む官能基は、本発明にかかる
炭素膜の前駆体を合成する前に導入することができる。
In the present invention, such a polyimide is used as a precursor of a carbon film. In the polyimide, a functional group containing boron is introduced into the skeleton structure of the polyimide. Such a functional group containing boron can be introduced before synthesizing the precursor of the carbon film according to the present invention.

【0024】本発明では、分子内に窒素を含む有機高分
子化合物の原料モノマーにホウ素を含む官能基を導入
し、この原料モノマーを重合し、骨格中に窒素とホウ素
とを含む有機高分子化合物を合成して前駆体とし、この
前駆体を熱処理によって炭素化することで、炭素膜を得
ることができる。
In the present invention, a functional group containing boron is introduced into a raw material monomer of an organic high molecular compound containing nitrogen in the molecule, the raw material monomer is polymerized, and the organic high molecular compound containing nitrogen and boron in the skeleton is obtained. Is synthesized into a precursor, and the precursor is carbonized by heat treatment, whereby a carbon film can be obtained.

【0025】例えば、本発明では、原料モノマーとして
DDEを用い、このモノマーにホウ素を含む官能基を導
入し、これとPMDAとを重合させてポリアミック酸と
し、この分子内にホウ素を含有するポリアミック酸をイ
ミド化してホウ素含有ポリイミドを製造することができ
る。
For example, in the present invention, DDE is used as a raw material monomer, a functional group containing boron is introduced into this monomer, and this is polymerized with PMDA to form a polyamic acid, and the polyamic acid containing boron in the molecule is used. Can be imidated to produce a boron-containing polyimide.

【0026】この場合、DDEの2の位置にホウ素を含
む官能基を導入したものを合成し、これを用いてポリア
ミック酸を合成することができる。図1は、一例のホウ
素を含む官能基で置換したDDEの構造式である。
In this case, a compound in which a functional group containing boron is introduced at position 2 of DDE is synthesized, and a polyamic acid can be synthesized using the compound. FIG. 1 is a structural formula of DDE substituted with an example of a functional group containing boron.

【0027】このように、炭素膜の前駆体としてポリイ
ミドを用いる場合には、図1に示すようなDDEに導入
されたホウ素を含む官能基を用いることができる。かか
る官能基は、DDEに比較的容易に導入することがで
き、導入後の化合物の化学的安定性に優れる。また、か
かる官能基は、重合してポリアミック酸を合成する際、
比較的じゃまになり難い。
As described above, when polyimide is used as a precursor of the carbon film, a functional group containing boron introduced into DDE as shown in FIG. 1 can be used. Such a functional group can be relatively easily introduced into DDE, and the compound after the introduction has excellent chemical stability. In addition, such a functional group, when polymerizing to synthesize a polyamic acid,
Relatively hard to get in the way.

【0028】しかし、かかるホウ素含有ポリアミック酸
は、ガラス基板上等にキャストする際に必要となる十分
な重合度を得ることができない場合がある。DDEは、
2の位置等にホウ素を含む官能基を導入した場合、アミ
ノ基が脱落し易くなることがあり、高い純度で合成する
のが難しくなるからである。
However, such a boron-containing polyamic acid may not be able to obtain a sufficient degree of polymerization required for casting on a glass substrate or the like. DDE is
This is because, when a functional group containing boron is introduced at the position 2 or the like, the amino group may easily fall off, making it difficult to synthesize with high purity.

【0029】かかる場合、ホウ素を含む官能基を導入し
たDDEの合成条件を検討したり、精製によって純度を
高めることで、十分な重合度のホウ素含有ポリアミック
酸を得ることができる。
In such a case, a boron-containing polyamic acid having a sufficient degree of polymerization can be obtained by studying the conditions for synthesizing DDE into which a functional group containing boron has been introduced, or by increasing the purity by purification.

【0030】あるいはまた、重合度の低い状態で得られ
たホウ素含有ポリアミック酸を、通常のポリアミック酸
と等モル混合し、イミド化すれば、重合度の高いホウ素
含有ポリイミド薄膜を得ることができる。その後、この
薄膜を1200℃等の温度で炭素化すれば、ホウ素と窒
素とを含有する、緻密で均質な炭素膜が得られる。
Alternatively, a boron-containing polyimide film having a high degree of polymerization can be obtained by mixing the boron-containing polyamic acid obtained in a state of a low degree of polymerization with an ordinary polyamic acid in an equimolar amount and imidizing the mixture. Then, if this thin film is carbonized at a temperature of 1200 ° C. or the like, a dense and uniform carbon film containing boron and nitrogen can be obtained.

【0031】[0031]

【実施例】以下、図面を参照して、実施例及び比較例に
基づき本発明をより詳細に説明する。実施例1 本実施例では、ホウ素を含む官能基を導入した原料を用
いて、分子中にホウ素を含むポリイミド膜(PI−P
B)を作成し、この膜の炭素化挙動について検討した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings based on examples and comparative examples. Example 1 In this example, a polyimide film containing boron in a molecule (PI-P) was prepared using a raw material into which a functional group containing boron was introduced.
B) was prepared, and the carbonization behavior of this film was examined.

【0032】図1に示す、ホウ素を含む官能基で2の位
置を置換した4,4′−diaminodipheny
l ether(DDE)を合成し、Pyromell
itic dianhydride(PMDA)と重合
してホウ素含有ポリアミック酸を調製した。
As shown in FIG. 1, 4,4'-diaminodiphenyl substituted at position 2 by a functional group containing boron.
lether (DDE) was synthesized, and Pyromell was synthesized.
It polymerized with itic dianhydride (PMDA) to prepare a boron-containing polyamic acid.

【0033】この調製の際、ホウ素を含有するDDEと
PMDAとを、N,N−Dimethylacetam
ide(DMAc)中に等モル溶解して、水冷しなが
ら、3時間攪拌重合したが、十分な重合度が得られなか
った。このため、以下のイミド化においては、このホウ
素含有ポリアミック酸と、ホウ素を含む官能基で置換さ
れていない通常のDDEとPMDAとから調製した通常
のポリアミック酸とを等モル混合して、これらをイミド
化した。
In this preparation, boron-containing DDE and PMDA were combined with N, N-dimethylacetam.
The solution was dissolved in an equimolar amount in ide (DMAc), and the mixture was stirred and polymerized for 3 hours while cooling with water. However, a sufficient degree of polymerization was not obtained. For this reason, in the following imidization, this boron-containing polyamic acid and a normal polyamic acid prepared from normal DDE and PMDA not substituted with a boron-containing functional group are equimolarly mixed, and these are mixed. It was imidized.

【0034】イミド化は、原料をガラス基板上にキャス
トし、真空オーブン中、60℃で3時間、120℃で2
時間乾燥した後、200℃で3時間行った。得られたポ
リイミド膜は、イミド化の際にガラス基板から剥離して
しまい、膜厚は50μmとなった。このポリイミド膜
は、計算上0.91at%のホウ素を含む。
In the imidization, the raw material is cast on a glass substrate and placed in a vacuum oven at 60 ° C. for 3 hours and at 120 ° C. for 2 hours.
After drying for an hour, the reaction was performed at 200 ° C. for 3 hours. The obtained polyimide film was separated from the glass substrate during imidization, and the film thickness became 50 μm. This polyimide film contains 0.91 at% of boron in calculation.

【0035】ポリイミド膜の炭素化は、Ar気流中、6
00〜1200℃の一定温度まで400K/hで昇温
し、1時間行った。得られた炭素薄膜について、XP
S、EPMA、SEM、元素分析(燃焼法)及び電気伝
導度の測定を行った。炭素化は、現在のところ600〜
1200℃の範囲で行っているが、さらに高温を検討中
である。
The carbonization of the polyimide film is carried out in a stream of Ar gas.
The temperature was raised to a constant temperature of 00 to 1200 ° C. at 400 K / h, and the heating was performed for 1 hour. About the obtained carbon thin film, XP
S, EPMA, SEM, elemental analysis (combustion method) and measurement of electric conductivity were performed. Carbonization is currently 600-
It is conducted in the range of 1200 ° C., but higher temperatures are under consideration.

【0036】比較例1 通常のポリアミック酸にボランを混合してイミド化し、
ホウ素を混合したポリイミド膜(PI−B)を作成し、
この膜の炭素化挙動を検討した。
Comparative Example 1 An ordinary polyamic acid was imidized by mixing borane with it.
Create a polyimide film (PI-B) mixed with boron,
The carbonization behavior of this film was studied.

【0037】PMDAとホウ素を含む官能基で置換され
ていないDDEとをDMAcに等モル溶解して、水冷し
ながら3時間攪拌重合した。これに、ホウ素源としてD
MAcに溶解したDihydroxyphenylbo
raneを加え、さらに2時間攪拌重合して、3at%
のB−doped Polyamic acidを調製
した。
PMDA and DDE not substituted with a boron-containing functional group were dissolved in DMAc in equimolar amounts and polymerized with stirring for 3 hours while cooling with water. In addition, D
Dihydroxyphenylbo dissolved in MAc
was added, and the mixture was further stirred and polymerized for 2 hours.
B-doped Polyamic acid was prepared.

【0038】これをガラス基板上にキャストし、真空オ
ーブン中、60℃で3時間、120℃で2時間乾燥した
後、200℃で3時間イミド化して、厚さ35μmの市
販のKaptonタイプのポリイミド膜を作成した。炭
素化は、Ar気流中で500〜1600℃の一定温度ま
で400K/hで昇温し、1時間行った。
This was cast on a glass substrate, dried in a vacuum oven at 60 ° C. for 3 hours and at 120 ° C. for 2 hours, and then imidized at 200 ° C. for 3 hours to obtain a commercially available Kapton-type polyimide having a thickness of 35 μm. A membrane was made. The carbonization was performed for 1 hour at a temperature of 400 K / h up to a constant temperature of 500 to 1600 ° C. in an Ar gas stream.

【0039】得られた炭素薄膜について、実施例1と同
様にして、XPS、EPMA、SEM、元素分析(燃焼
法)及び電気伝導度の測定を行った。
With respect to the obtained carbon thin film, XPS, EPMA, SEM, elemental analysis (combustion method) and measurement of electric conductivity were performed in the same manner as in Example 1.

【0040】比較例2 比較例1において、ボランを混合することなく、通常の
ポリアミック酸をイミド化し、ポリイミド膜(PI)を
作成し、この膜の炭素化挙動を実施例1と同様に検討し
た。
Comparative Example 2 In Comparative Example 1, a polyimide film (PI) was prepared by imidizing ordinary polyamic acid without mixing borane, and the carbonization behavior of this film was examined in the same manner as in Example 1. .

【0041】検討結果 図2は、XPSによる表面のN1sとC1sスペクトル
の強度比を炭素化温度に対してプロットしたものであ
る。図3は、XPSによる表面のN1sとC1sスペク
トルの強度比を元素分析によるN/Cモル比に対してプ
ロットしたものである。
[0041] Study Results Figure 2 is a plot of the intensity ratio of N1s and C1s spectrum of the surface by XPS with respect to carbonization temperatures. FIG. 3 is a graph in which the intensity ratio of the N1s and C1s spectra of the surface by XPS is plotted against the N / C molar ratio by elemental analysis.

【0042】図2に示すように、ホウ素を混合したポリ
イミド膜(PI−B)では、混合しないポリイミド膜
(PI)に比べて、1000℃以上におけるNの残存割
合が2倍程度になった。
As shown in FIG. 2, in the polyimide film (PI-B) mixed with boron, the residual ratio of N at 1000 ° C. or more was about twice that of the polyimide film (PI) not mixed.

【0043】図としては特に示していないが、N1sス
ペクトルを解析した結果、PI−Bでは、PIで高温ま
で残存する第三級アミン型の窒素に加えて、B−N結合
型の窒素が生成していることが分かった。このB−N結
合型の窒素が残存窒素量の増加の原因と考えられた。
Although not particularly shown in the figure, as a result of analyzing the N1s spectrum, in the PI-B, in addition to the tertiary amine-type nitrogen remaining at high temperatures at PI, BN-bonded nitrogen is generated. I knew I was doing it. This BN-bonded nitrogen was considered to be the cause of the increase in the amount of residual nitrogen.

【0044】また、元素分析の結果と比較して、PIで
は、膜表面のN/Cモル比が元素分析の値とほぼ一致し
たのに対して、PI−Bでは、膜内部の方がN/Cモル
比が高くなり、また、表面のB1s/C1sスペクトル
強度比も炭素化温度とともに単調に増加する傾向は見ら
れなかった。
As compared with the results of the elemental analysis, in the PI, the N / C molar ratio of the film surface almost coincided with the value of the elemental analysis, whereas in PI-B, the N / C mole ratio in the film inside was lower. / C molar ratio increased, and the B1s / C1s spectral intensity ratio of the surface did not tend to monotonously increase with the carbonization temperature.

【0045】更に、SEM観察の結果、高温になるほど
炭素化後の表面に亀裂が生ずることが分かり、分析の結
果と併せると、窒素及びホウ素を含むフラグメントが炭
素化中に気体となって脱離しているものと推定された。
Further, as a result of SEM observation, it was found that cracks were formed on the surface after carbonization at higher temperatures, and together with the results of the analysis, fragments containing nitrogen and boron became gas during carbonization and were desorbed. It was estimated that.

【0046】電気伝導度は、900℃を超えると、Pl
−Bの方が低下してしまったが、これは主に亀裂の発生
によるためではないかと考えられた。
When the electric conductivity exceeds 900 ° C., Pl
-B decreased, but it was considered that this was mainly due to the occurrence of cracks.

【0047】表面からのEPMA測定では、ホウ素の分
布はほぼ均一であったが、PI−Bによるホウ素の混合
法では、ホウ素を高温まで皮膜全体に安定に固定するの
はかなり難しいという結果になった。
In the EPMA measurement from the surface, the distribution of boron was almost uniform, but the boron mixing method by PI-B resulted in that it was very difficult to stably fix boron to the whole film up to a high temperature. Was.

【0048】このような比較例1及び2の検討結果か
ら、PI−Bでは、高温での炭素化の際に、ボランを含
む成分が表面から気体として離脱していると考えられ、
均質なホウ素及び窒素含有炭素薄膜を得るには、熱処置
等に工夫が必要であることが分かった。
From the examination results of Comparative Examples 1 and 2, it is considered that in the case of PI-B, the component containing borane was released from the surface as a gas during carbonization at a high temperature.
In order to obtain a uniform boron and nitrogen-containing carbon thin film, it was found that some measures such as heat treatment were required.

【0049】分子内にホウ素を含む官能基を導入した実
施例1のポリイミド膜(PI−PB)では、XPSによ
る表面のN1s/C1sスペクトル強度比の炭素化温度
による変化は、図2に示すPI−Bとまったく同じ傾向
であり、また、800℃からB−N結合型のN1sピー
クを分離できた。
In the polyimide film (PI-PB) of Example 1 in which a functional group containing boron was introduced into the molecule, the change in the N1s / C1s spectral intensity ratio of the surface by XPS due to the carbonization temperature was shown in FIG. The tendency was exactly the same as that of -B, and the N1s peak of the BN bond type could be separated from 800 ° C.

【0050】本明細書では示していないが、本発明者に
よる分子軌道法計算から、炭素の6角網面中にホウ素と
窒素とが置換すると、ホウ素と窒素とが孤立しているよ
りもB−N結合して存在している方が、エネルギー的に
は桁違いに安定になるという結果が得られている〔第2
4回炭素材料学会年会要旨集、金野、岡、田地川、稲
垣、p.302(1997)〕。
Although not shown in the present specification, according to the calculation of molecular orbital method by the present inventor, when boron and nitrogen are substituted in the carbon hexagonal plane, B is higher than that when boron and nitrogen are isolated. It has been found that the presence of -N bonds makes the energy more stable by orders of magnitude.
Abstracts of the 4th Annual Meeting of the Carbon Materials Society of Japan, Konno, Oka, Tachikawa, Inagaki, p. 302 (1997)].

【0051】このようなことと、実施例1の検討結果か
ら、ホウ素を含む官能基を導入した実施例1のポリイミ
ド膜(PI−PB)では、元のホウ素の存在状態に因ら
ず、熱処理によって、B−N結合が炭素構造中に分散し
たような化合物を与えることが分かった。
From the above and the results of the examination of Example 1, the polyimide film (PI-PB) of Example 1 in which a functional group containing boron was introduced, regardless of the original state of boron, Was found to give a compound in which the BN bonds were dispersed in the carbon structure.

【0052】しかし、PI−PBのN1sスペクトル中
のB−N結合型のホウ素と窒素の割合は、PI−Bとは
異なり、炭素化温度とともにほぼ直線的に増加して、1
200℃では第三級アミン型の窒素のほぼ2倍となっ
た。
However, unlike PI-B, the ratio of BN-bonded boron and nitrogen in the N1s spectrum of PI-PB increases almost linearly with the carbonization temperature.
At 200 ° C., the amount was almost twice as large as that of tertiary amine type nitrogen.

【0053】また、図3に示したように、表面のN1s
/C1sスペクトル強度比と元素分析によるN/Cモル
比が直線関係を示し、PIの場合に近いことから、炭素
化後の薄膜表面と内部の組成差は、ほとんどないことが
分かった。
Further, as shown in FIG.
Since the / C1s spectrum intensity ratio and the N / C molar ratio by elemental analysis showed a linear relationship, which was close to the case of PI, it was found that there was almost no difference in composition between the surface of the thin film after carbonization and the inside.

【0054】更に、図としては特に示していないが、表
面のB1s/C1sスペクトル強度比も、800℃から
炭素化温度とともに直線的に増加した。
Further, although not particularly shown in the figure, the B1s / C1s spectrum intensity ratio on the surface also increased linearly from 800 ° C. with the carbonization temperature.

【0055】また、特に図示していないが、B−N結合
型のN1sスペクトル強度をB1sの強度に対してプロ
ットしたところ、ほぼ直線関係が得られた。しかし、こ
のグラフは零点を通らず、表面ではホウ素がやや過剰で
あることが分かり、B−N型以外のホウ素も存在するこ
とが示唆された。
Although not particularly shown, when the BN bond type N1s spectrum intensity was plotted against the B1s intensity, an almost linear relationship was obtained. However, this graph did not pass through the zero point, and it was found that boron was slightly excessive on the surface, suggesting that boron other than the BN type was also present.

【0056】以上の結果から、分子内にホウ素を含むポ
リイミドを用いた方が、異種原子をより均質に含む炭素
薄膜を作成できることが分かった。
From the above results, it was found that the use of polyimide containing boron in the molecule can produce a carbon thin film containing different atoms more uniformly.

【0057】[0057]

【発明の効果】本発明によれば、ポリイミドの骨格構造
にホウ素を導入して、これを熱処理によって炭素化する
ことにより、より一層緻密で均質な、ホウ素及び窒素を
含有する炭素膜を製造することができる。
According to the present invention, a more dense and homogeneous carbon film containing boron and nitrogen is produced by introducing boron into the skeleton structure of polyimide and carbonizing it by heat treatment. be able to.

【0058】本発明により得られる炭素膜は、機能性炭
素材料として、リチウム2次電池、センサー、半導体等
の製品への適用が期待される。
The carbon film obtained by the present invention is expected to be used as a functional carbon material for products such as lithium secondary batteries, sensors, and semiconductors.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明にかかる一例の置換したDDEの構造式
である。
FIG. 1 is a structural formula of an exemplary substituted DDE according to the present invention.

【図2】XPSによる炭素膜表面のN1sとC1sスペ
クトルの強度比を炭素化温度に対してプロットしたグラ
フである。
FIG. 2 is a graph in which the intensity ratio of N1s and C1s spectra of the carbon film surface by XPS is plotted against the carbonization temperature.

【図3】XPSによる炭素膜表面のN1sとC1sスペ
クトルの強度比を元素分析によるN/Cモル比に対して
プロットしたグラフである。
FIG. 3 is a graph in which the intensity ratio of N1s and C1s spectra on the carbon film surface by XPS is plotted against the N / C molar ratio by elemental analysis.

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成11年5月21日[Submission date] May 21, 1999

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】発明の名称[Correction target item name] Name of invention

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【発明の名称】 炭素膜の製造方法及び被処理膜Patent application title: Method for producing carbon film and film to be treated

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0001[Correction target item name] 0001

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0001】[0001]

【発明の属する技術分野】本発明は、有機高分子化合物
を炭素化して得られる炭素膜に関し、特に、かかる炭素
膜を得るための被処理膜に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a carbon film obtained by carbonizing an organic polymer compound, and more particularly to a film to be treated for obtaining such a carbon film.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0009[Correction target item name] 0009

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0009】本発明は、孔の発生等による物理的欠陥が
無く、組成の均質な炭素膜を、高配向性炭素材料の被処
理膜の熱処理によって得ることを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to obtain a carbon film having a uniform composition without physical defects due to generation of pores or the like by heat treatment of a film to be treated with a highly oriented carbon material.

【手続補正5】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0010】[0010]

【課題を解決するための手段】本発明は、被処理膜の熱
処理によって、窒素及びホウ素を含有している炭素膜を
得るにあたり、前記被処理膜がポリイミドからなり、前
記熱処理の前に、ホウ素を含む官能基を前記ポリイミド
の骨格構造に導入し、前記被処理膜を前記熱処理によっ
て炭素化する、炭素膜の製造方法に係るものである。
According to the present invention, when a carbon film containing nitrogen and boron is obtained by heat-treating a film to be treated, the film to be treated is made of polyimide. The present invention relates to a method for producing a carbon film, wherein a functional group containing is introduced into the skeleton structure of the polyimide, and the film to be treated is carbonized by the heat treatment.

【手続補正6】[Procedure amendment 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0011[Correction target item name] 0011

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0011】また、本発明は、熱処理によって、窒素及
びホウ素を含有している炭素膜を得るための被処理膜で
あって、前記被処理膜がポリイミドからなり、ホウ素を
含む官能基が前記ポリイミドの骨格構造に導入されてお
り、前記被処理膜が前記熱処理によって炭素化する、炭
素膜を得るための被処理膜に係るものである。
The present invention is also a film to be treated for obtaining a carbon film containing nitrogen and boron by heat treatment, wherein the film to be treated is made of polyimide, and the functional group containing boron is a polyimide. Wherein the film to be treated is carbonized by the heat treatment, and is a film to be treated for obtaining a carbon film.

【手続補正7】[Procedure amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0023[Correction target item name] 0023

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0023】本発明では、かかるポリイミドを被処理膜
として用いるが、かかるポリイミドには、ホウ素を含む
官能基が、そのポリイミドの骨格構造に導入されてい
る。かかるホウ素を含む官能基は、本発明の被処理膜を
合成する前に導入することができる。
In the present invention, such a polyimide is used as a film to be treated. In such a polyimide, a functional group containing boron is introduced into the skeleton structure of the polyimide. Such a functional group containing boron can be introduced before synthesizing the target film of the present invention.

【手続補正8】[Procedure amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0024[Correction target item name] 0024

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0024】本発明では、分子内に窒素を含む有機高分
子化合物の原料モノマーにホウ素を含む官能基を導入
し、この原料モノマーを重合し、骨格中に窒素とホウ素
とを含む有機高分子化合物を合成して被処理膜とし、こ
の被処理膜を熱処理によって炭素化することで、炭素膜
を得ることができる。
In the present invention, a functional group containing boron is introduced into a raw material monomer of an organic high molecular compound containing nitrogen in the molecule, the raw material monomer is polymerized, and the organic high molecular compound containing nitrogen and boron in the skeleton is obtained. Are synthesized into a film to be processed, and the film to be processed is carbonized by heat treatment, whereby a carbon film can be obtained.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 窒素及びホウ素を含有している炭素膜を
得るにあたり、 前記炭素膜の前駆体がポリイミドからなり、前記ホウ素
を含む官能基が前記ポリイミドの骨格構造に導入されて
おり、前記前駆体を熱処理によって炭素化することを特
徴とする、炭素膜の製造方法。
In obtaining a carbon film containing nitrogen and boron, a precursor of the carbon film is made of polyimide, and the functional group containing boron is introduced into a skeleton structure of the polyimide. A method for producing a carbon film, comprising carbonizing a body by heat treatment.
【請求項2】 窒素及びホウ素を含有している炭素膜を
得るための前駆体であって、 前記前駆体がポリイミドからなり、前記ホウ素を含む官
能基が前記ポリイミドの骨格構造に導入されており、前
記前駆体が熱処理によって炭素化することを特徴とす
る、炭素膜を得るための前駆体。
2. A precursor for obtaining a carbon film containing nitrogen and boron, wherein the precursor is made of polyimide, and the functional group containing boron is introduced into a skeleton structure of the polyimide. A precursor for obtaining a carbon film, wherein the precursor is carbonized by a heat treatment.
JP10155461A 1998-06-04 1998-06-04 Method for producing carbon film and target film Expired - Fee Related JP2976024B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050356A (en) * 2000-05-26 2002-02-15 Ube Ind Ltd Secondary battery electrode material and its manufacturing method
JP2002308611A (en) * 2001-04-06 2002-10-23 Ube Ind Ltd Graphite laminar sheet material and method for manufacturing the same
JP2011195361A (en) * 2010-03-18 2011-10-06 Teijin Ltd Carbon material and method for producing the same
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