JPH11340573A - 窒化ガリウム系半導体レーザ素子 - Google Patents

窒化ガリウム系半導体レーザ素子

Info

Publication number
JPH11340573A
JPH11340573A JP14678698A JP14678698A JPH11340573A JP H11340573 A JPH11340573 A JP H11340573A JP 14678698 A JP14678698 A JP 14678698A JP 14678698 A JP14678698 A JP 14678698A JP H11340573 A JPH11340573 A JP H11340573A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
layer
gallium nitride
based semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14678698A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11340573A5 (enExample
Inventor
Toshiyuki Okumura
敏之 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14678698A priority Critical patent/JPH11340573A/ja
Publication of JPH11340573A publication Critical patent/JPH11340573A/ja
Publication of JPH11340573A5 publication Critical patent/JPH11340573A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP14678698A 1998-05-28 1998-05-28 窒化ガリウム系半導体レーザ素子 Pending JPH11340573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14678698A JPH11340573A (ja) 1998-05-28 1998-05-28 窒化ガリウム系半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14678698A JPH11340573A (ja) 1998-05-28 1998-05-28 窒化ガリウム系半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004076720A Division JP3933637B2 (ja) 2004-03-17 2004-03-17 窒化ガリウム系半導体レーザ素子

Publications (2)

Publication Number Publication Date
JPH11340573A true JPH11340573A (ja) 1999-12-10
JPH11340573A5 JPH11340573A5 (enExample) 2005-03-10

Family

ID=15415517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14678698A Pending JPH11340573A (ja) 1998-05-28 1998-05-28 窒化ガリウム系半導体レーザ素子

Country Status (1)

Country Link
JP (1) JPH11340573A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358404A (ja) * 2000-06-09 2001-12-26 Nichia Chem Ind Ltd 半導体レーザ素子及びその製造方法
US6891189B2 (en) * 2000-04-27 2005-05-10 Sharp Kabushiki Kaisha Nitride semiconductor laser device and optical pickup apparatus therewith
US6985505B2 (en) 2002-03-01 2006-01-10 Opnext Japan, Inc. Semiconductor laser diode and optical module
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members
JP2009158647A (ja) * 2007-12-26 2009-07-16 Sharp Corp 窒化物系半導体レーザ素子およびその製造方法
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device
JP2012070008A (ja) * 2001-05-30 2012-04-05 Cree Inc 量子井戸と超格子とを有するｉｉｉ族窒化物系発光ダイオード構造
EP2642622A2 (en) 2012-03-22 2013-09-25 Nichia Corporation Semiconductor laser device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891189B2 (en) * 2000-04-27 2005-05-10 Sharp Kabushiki Kaisha Nitride semiconductor laser device and optical pickup apparatus therewith
JP2001358404A (ja) * 2000-06-09 2001-12-26 Nichia Chem Ind Ltd 半導体レーザ素子及びその製造方法
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members
JP2012070008A (ja) * 2001-05-30 2012-04-05 Cree Inc 量子井戸と超格子とを有するｉｉｉ族窒化物系発光ダイオード構造
US9054253B2 (en) 2001-05-30 2015-06-09 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US9112083B2 (en) 2001-05-30 2015-08-18 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6985505B2 (en) 2002-03-01 2006-01-10 Opnext Japan, Inc. Semiconductor laser diode and optical module
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device
JP2009158647A (ja) * 2007-12-26 2009-07-16 Sharp Corp 窒化物系半導体レーザ素子およびその製造方法
EP2642622A2 (en) 2012-03-22 2013-09-25 Nichia Corporation Semiconductor laser device
US9225146B2 (en) 2012-03-22 2015-12-29 Nichia Corporation Semiconductor laser device

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