JPH11340155A - Member for heat-treating semiconductor wafer and jig using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a heavy metal gettering-effect without causing the slipping of a semiconductor wafer during heat treatment by forming a thin plate-like body which supports the whole one surface of the semiconductor wafer of a sintered silicon material obtained by sintering a granular polycrystalline silicon material. SOLUTION: A sintered material used for forming a wafer supporting member 2 has a high strength and high purity, because the material is obtained by pulverizing granular polycrystalline silicon into grains of 3-35 μm in diameter, molding the grains, and sintering the molded grains. In the heat-treating process of a semiconductor wafer W, it is apprehended that a heavy metal contained in the furnace member of the used heat treating furnace is discharged into the internal space of the furnace by thermal diffusion during high-temperature heat treatment and contaminates the wafer W. However, since the supporting member 2 is formed of the sintered silicon which is obtained by molding and sintering grains obtained by pulverizing granular polycrystalline silicon, the member 2 exhibits a heavy metal gettering effect and captures the heavy metal even when the heavy metal is discharged. Therefore, the contamination of the wafer W with the heavy metal can be eliminated. In addition, the slipping dislocation of the wafer W can also be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin plate-like member for heat treatment of a semiconductor wafer and a jig using the same.
In particular, the present invention relates to a member for heat treatment of a semiconductor wafer which does not generate a slip in a semiconductor wafer during heat treatment and has a heavy metal gettering effect, and a jig using the same.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, there are a number of heat treatment steps such as oxidation and diffusion. In each heat treatment step, a plurality of semiconductor wafers are placed on a vertical wafer boat, and a large number of semiconductor wafers are placed. The obtained vertical wafer boat is housed in a vertical heat treatment furnace and heated to perform heat treatment.

A vertical wafer boat on which semiconductor wafers are mounted has a structure in which a plurality of bar-shaped support members having a large number of slits for mounting wafers are erected in parallel in the vertical direction. The semiconductor wafer is heat-treated in a vertical heat treatment furnace in a state where several points on the outer peripheral portion of the semiconductor wafer are supported by slits of the support member. In addition, as a material for forming the vertical wafer boat, quartz glass, SiC
Coated Si-impregnated SiC, single crystal silicon, or the like is used.

A semiconductor wafer supported by a slit of a support member of a vertical boat receives a stress from its support due to its own weight, and further receives a thermal stress due to a temperature difference in a wafer surface during heat treatment.

[0005] When the superimposed stress exceeds the shear yield stress value of the silicon crystal of the semiconductor wafer, crystal dislocation occurs in the semiconductor wafer, causing a slip, thereby deteriorating the quality of the semiconductor wafer.

[0006] The shear yield stress value that causes a slip on a semiconductor wafer is smaller at higher temperatures, that is, the slip is more likely to occur.

Further, in recent years, with the increase in the degree of integration of semiconductor devices, the diameter of wafers has been increasing in order to increase the device yield per wafer. The stress is increased, and slip dislocation is easily generated, which is a serious problem. Further, in an epitaxial growth apparatus for depositing and growing a silicon single crystal on the surface of a semiconductor wafer heated to a high temperature by a CVD method, a batch type,
Alternatively, a graphite substrate coated with SiC is used for the single-wafer susceptor.

Further, high temperature heat treatment (1100 ° C. to 1250
0.degree. C.) not only tends to cause slip as described above, but also has the disadvantage that the semiconductor wafer is contaminated with heavy metals. This is because heavy metals contained in the furnace members of the vertical heat treatment furnace are released into the furnace by thermal diffusion during high-temperature treatment, and contaminate the semiconductor wafer.

The semiconductor wafer causes the deterioration of the device characteristics and the yield due to metal contamination. However, since the metal contamination does not have to be present in the surface layer portion which is the device active region of the semiconductor wafer, the metal impurity is deposited on the inside or the back surface of the semiconductor wafer. The gettering technology for capturing in the field has been actively studied.

As a prior art related to the present invention, for example, Japanese Unexamined Patent Publication No. Hei 5-152228 discloses that a disk-shaped holding member made of silicon single crystal, quartz or SiC larger than a semiconductor wafer is provided in parallel. A method is disclosed in which a plurality of rod-shaped support posts are supported by support grooves provided on a plurality of rod-shaped support columns, and a semiconductor wafer smaller than the support member is placed on the support member. The method disclosed herein is to form the support member larger than the semiconductor wafer, thereby preventing the semiconductor wafer from contacting the support pillar in the film forming process, and preventing the semiconductor wafer from being damaged. is there.

However, according to the present invention, even if a disk-shaped support member is used, when it is made of silicon single crystal or quartz, slip generated during high-temperature heat treatment can be sufficiently prevented. And SiC
In any of the materials including the above, it was not possible to sufficiently prevent the deterioration of the device characteristics and the reduction of the yield due to heavy metal contamination.

Japanese Patent Application Laid-Open No. 6-151347 discloses a vertical heat treatment furnace in which a semiconductor wafer is supported by a semicircular support member to prevent the semiconductor wafer from slipping during heat treatment in a vertical furnace. However, since the vertical heat treatment furnace boat is supported by a semi-circular support member, it is not suitable for a semiconductor wafer having a large diameter of 300 mm and further has device characteristics due to heavy metal contamination. No measures are taken to prevent the deterioration of the yield and the yield.

Further, a boat for a vertical heat treatment furnace having a structure in which a semiconductor wafer is supported in line contact in a ring shape instead of the above-mentioned semicircular support member has been proposed. This boat has a ring-shaped holding portion. It is difficult to manufacture accurately,
There is a problem with the support accuracy, which results in practically three or four supports, which has not solved the problem of wafer slip.

[0014]

Accordingly, there is a need for a semiconductor wafer heat treatment member which does not cause slip during high temperature heat treatment and which does not cause deterioration of device characteristics or yield due to heavy metal contamination, and a jig using the same. Have been.

The present invention has been made in view of the above circumstances, and provides a semiconductor wafer heat treatment member having a heavy metal gettering effect without causing a slip in a semiconductor wafer during heat treatment, and a jig using the same. The purpose is to do.

[0016]

According to the first aspect of the present invention, there is provided a thin plate for supporting at least one entire surface of a semiconductor wafer, wherein the thin plate is made of polycrystalline silicon. The gist of the present invention is to provide a member for heat treatment of a semiconductor wafer, comprising a silicon sintered body obtained by sintering a granular material.

According to the invention of claim 2 of the present application, the polycrystalline silicon granular material has an average crystal grain size of 3 to 25 μm, and is characterized in that it is a member for heat treatment of a semiconductor wafer according to claim 1. I have.

[0018] In the invention of claim 3, said thin plate member is a disc shape, when the diameter and Dmm, the thickness ^{(D / 2) 2 / 18000~} (D / 2) 2/28500
mm. The gist of the invention is a member for heat treatment of a semiconductor wafer according to claim 1 or 2.

According to a fourth aspect of the present invention, there is provided a jig for heat treatment of a semiconductor wafer, comprising a member for heat treatment of a semiconductor wafer and a receiver for receiving the member.

According to a fifth aspect of the present invention, the semiconductor wafer heat treatment member is held by a holding portion provided on the receiver, and is detachably disposed on the receiver. The jig for heat treatment of a semiconductor wafer described in (1) above.

According to a sixth aspect of the present invention, in the semiconductor wafer according to the fifth aspect of the present invention, the receiving member has a holding portion for arranging the semiconductor wafer heat treatment member at an interval in a predetermined direction. The gist is that it is a jig for heat treatment.

According to a seventh aspect of the present invention, in the semiconductor wafer heat treatment apparatus according to the fifth aspect of the present invention, the receiver has a holding portion for fixing the one semiconductor wafer heat treatment member in a horizontal direction. The gist is that it is a tool.

According to the invention of claim 8 of the present application, the subject is a jig for heat treatment of a semiconductor wafer according to claim 6, wherein the receiver is a vertical boat.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a jig for heat treating a semiconductor wafer according to the present invention will be described below with reference to the accompanying drawings.

As shown in FIG. 1, a jig 1 for heat treatment of a semiconductor wafer according to the present invention comprises a wafer support member 2 in the form of a thin disk having a wafer W mounted thereon, for example, a wafer W. The receiving member 3 is configured to receive the wafer supporting member 2 detachably.

The receiver 3 is, for example, a vertical boat. The vertical boat 3 is formed of silicon crystal, and has a disk-shaped base 4 and an upright so that an opening 5 is formed in the base 4. Three pillars 6, 6, 6 provided, and holding portions provided on the pillars 6, 6, 6, for example, a large number of holding pieces 7, 7, 7, each provided longer, and pillars 6, 6, , The stability of 6, the strut 6,
It is composed of a horseshoe-shaped upper fixing plate 8 provided at the upper ends of the columns 6, 6, 6 for maintaining the interval between the columns 6, 6.

The wafer supporting member 2 on which the wafer W is mounted is inserted through the opening 5, and is mounted on the supporting pieces 7, 7, 7 of the columns 6, 6, 6, and is attached to and detached from the receiver 3. Housed and arranged.

The wafer supporting member 2 has a diameter D of 300 m.
This is a sintered body obtained by sintering granular polycrystalline silicon having a thin plate shape having a thickness of 1.0 mm and a thickness t of 1.0 mm, a disk shape, and an average particle size of 3 to 25 μm, for example, 8 μm.

The surface 9 of the wafer support member 2 supporting the semiconductor wafer W is formed so that the unevenness is 0.1 mm or less over the entire surface of the surface 9.

When the wafer W is placed on the wafer support member 2, the wafer W and the wafer support member 2 bend while being in contact with each other due to the weight of the wafer W as shown in FIG. The present inventors have found that the amount of deflection of the thin and disk-shaped wafer support member 2 according to the present invention is proportional to the square of the radius (D / 2) of the wafer support member 2 and inversely proportional to the thickness t. The thickness of the wafer supporting member 2 in consideration of the wafer supporting member 2 when a plurality of wafer supporting members 2 on which the wafers W are mounted is heat-processed, is (D / 2).
^{2 / 18000~ (D / 2)} 2 / 28500mm is derived that is appropriate.

That is, the thickness of the wafer support member 2 is 0.8 to 1.25 mm when the wafers W having a diameter of 300 mm are heat-treated in a stack, and the heat treatment is performed when the wafers 375 mm in diameter are stacked and heat-treated. , Wafer support member 2
Has a thickness of 1.23 to 1.95 mm.

Further, when the thickness of the wafer supporting member 2 is set to 0.1 mm.
If the thickness is smaller than 8 mm, the wafer support member 2 corresponding to the holding pieces 7, 7, 7 supporting the wafer support member 2 causes a bulge at a portion thereof, which causes a slip. In addition, the dislocation occurs in the wafer support member 2 itself due to the support of the wafer W, the mounting on the holding pieces 7, 7, 7 and the repetition of the heat treatment, causing plastic deformation, and the unevenness of the wafer support member 2 becomes large. Therefore, it cannot be used many times.

When the thickness of the wafer supporting member 2 is set to 1.2 mm or more, the above-mentioned plastic deformation can be prevented. However, the weight increases, which is not practical, and the heat capacity further increases. There is a possibility that a slip occurs in the semiconductor wafer W due to the thermal stress.

The sintered body forming the wafer support member 2 is
Granular polycrystalline silicon is pulverized to 3 to 25 μm, molded and sintered, has high strength and high purity, and has a gettering ability for metal impurities due to the presence of appropriate grain boundaries. Note that polycrystal is a state in which small single crystals in a particle form are bonded in an irregular direction.

When the average particle size of the granular polycrystal is 3 μm or less, it is not possible to sufficiently prevent oxidation of the granular polycrystalline silicon and contamination of impurities during the manufacturing process, so that the sintered body has sufficient strength and heat conductivity. No rate is obtained.

When the average particle size is 25 μm or more,
The sintered body lacks denseness, and the sintered body does not have sufficient strength and thermal conductivity, has few grain boundaries, and has poor gettering performance of metal impurities.

Further, when the material of the wafer supporting member 2 is silicon single crystal, the strength is lower than that of the sintered body of polycrystalline silicon, and when the thickness is equal to the thickness of the sintered body of polycrystalline silicon, In the same manner as described above, a bulge is generated at the portion of the wafer support member 2 corresponding to the holding pieces 7, 7, 7 and causes a slip, and dislocation occurs in the wafer support member 2 itself by repeating the support and heating processes. This causes plastic deformation, and the unevenness of the wafer support member 2 becomes large, so that the wafer support member 2 cannot be used many times.

Since the semiconductor wafer heat treatment jig 1 according to the present invention has the above-described structure, when the semiconductor wafer W is subjected to heat treatment, the semiconductor wafer W is concentrically placed on the wafer support member 2. After that, the wafer supporting member 2 on which the semiconductor wafer W is placed is inserted from the opening 5, and a large number of the supporting pieces 7 are placed on the holding pieces 7, 7, and stored in the boat 3. The boat 3 containing the plurality of wafer support members 2 is loaded into a heat treatment furnace (not shown), and the heat treatment furnace is heated to heat-treat the semiconductor wafer W.

In this heat treatment step, the heavy metal contained in the furnace member of the heat treatment furnace may be released into the furnace due to the thermal diffusion of the high-temperature treatment and may contaminate the semiconductor wafer. Since the wafer support member 2 is formed of sintered silicon formed by pulverizing granular polycrystalline silicon and then molding and sintering, there is a gettering effect, the wafer support member 2 captures heavy metals, and the semiconductor wafer W contaminates heavy metals. Never be.

Further, since the wafer supporting member 2 supports the semiconductor wafer W in surface contact, concentrated stress is not applied to the semiconductor wafer W from the wafer supporting member 2,
Even if a thermal stress is applied to the semiconductor wafer W in the heat treatment process, no slip occurs in the semiconductor wafer W.

Although the above description has been made based on the form of the jig for heat treatment of a semiconductor wafer, even when the wafer supporting member 2 is used alone, the same operation and effect can be obtained with the same member. Needless to say.

Next, another embodiment of the jig for heat treating a semiconductor wafer according to the present invention will be described with reference to FIG.

A single-wafer susceptor 11 as shown in FIG. 4 is suitable for a large-diameter wafer such as a 300-mm-diameter semiconductor wafer, and includes a receiver 12 and a member for heat-treating a semiconductor wafer received by the receiver 12, for example, a wafer. It is composed of a support member 13.

The receiver 12 is formed of a ring-shaped holding portion 14 for receiving the wafer supporting member 13 and a rising portion 15 erected around the holding portion 14.

Since the single-wafer susceptor 11 according to the present invention has the above-described structure, when heat treating the semiconductor wafer W, the semiconductor wafer W is concentrically placed on the wafer support member 13. Thereafter, the wafer supporting member 13 on which the semiconductor wafer W is mounted is housed in the receiver 12 and held by the holding unit 14.

The single wafer type susceptor 11 containing the wafer support member 13 is loaded into a heat treatment furnace (not shown), and the heat treatment furnace is heated to heat-treat the semiconductor wafer W.

In this heat treatment step, the same effects as in the above-described embodiment can be obtained. Furthermore, single-wafer susceptor 1
The jig 1 is smaller, lighter and easier to handle than a vertical boat, and is suitable for large-diameter wafers.

[0048]

EXAMPLES [1] Measurement of properties (bulk density, strength, thermal conductivity)

(1) Preparation of Sample A sample made of polycrystalline silicon having a different average particle size and having a diameter of 300
Wafer support plates of the following polycrystalline sintered bodies having a thickness of 1.0 mm and a thickness of 1.0 mm were prepared as various samples. This sample was prepared by using polycrystalline silicon having an average particle diameter of 30 mm in diameter.
Filled in a steel mold having a thickness of 0 mm and a thickness of 100 mm, and using a hot press, a pressure of 300 kg / cm ² and a temperature of 13
It was kept at 00 ° C. for 4 hours, and then fired in a non-oxidizing atmosphere of 10 to 4 torr. Example 1: average grain size of polycrystalline silicon: 3 mm, Example 2: average grain size: 8 mm, Example 3: average grain size: 25 mm, comparative example 1: average grain size: 1 mm, comparative example 2: average grain size: 30 m
m, Comparative Example 3: Single crystal wafer support member.

(2) Results of Measurement of Characteristics of Samples Table 1 shows the results of measuring the bulk density, bending strength and thermal conductivity of each sample prepared by the method of (1).

[0051]

[Table 1] From the measurement data as shown in Table 1, it is found that Examples 1 to 3 in which the average grain size of the polycrystal is 2 to 25 μm have bending strengths of 263 to 31.
5 MPa, thermal conductivity is as high as 95 to 110 W / M · K.

On the other hand, Comparative Example 1 having an average particle size of 1 μm had a bending strength of 180 MPa, thermal conductivity of 70 W / M · K, and Comparative Example 2 having an average particle size of 30 μm had a bending strength of 169 MPa.
The thermal conductivity is 80 W / M · K, which is a lower value than in Examples 1 to 3.

In Comparative Example 3, the thermal conductivity was 150 W / M.
-Although it has the highest value of K, the bending strength is at the lowest value of 100 MPa, and it can be seen that it is easy to bend under load.

[2] Slip Evaluation Test (1) Test Method Example 4 in which the above-described Example 2 was held in a vertical boat made of silicon single crystal having the structure shown in FIG. A slip evaluation test was performed on Comparative Example 4 using a ring-shaped support member of a silicon polycrystal sintered body as shown in FIG. 5 and a conventional example using a four-point support boat having a conventional structure.

(2) Heat treatment method Ten pieces of Example 2 in which a total of 10 pieces of sample wafers each having a diameter of 300 mm were placed on the boat of FIG. Five dummy wafers are placed on the top and bottom, respectively, and filled in the heating furnace. In Comparative Example 3, the same ten wafers are placed, and the same dummy wafers are placed, placed on the boat shown in FIG. 1 and filled in the heating furnace. ,
In the conventional example, the same 10 wafers were placed, the same dummy wafers were placed, and filled in a heating furnace, and the occurrence of slip due to heat treatment was evaluated in the following sequence. Heat treatment sequence: placed in a furnace in an argon atmosphere at 700 ° C., heated to 1200 ° C., kept at 1200 ° C. for 2 hours, 7
Temperature dropped to 00 ° C, leaving the furnace.

The silicon wafer used for the test was
Oxygen concentration is 1.25 to 1.3 × 10 ¹⁸atoms / cm^Three(O
ld ASTM). Depending on the wafer oxygen concentration,
Difficulty of slip generation, low oxygen concentration
The slip becomes more likely to occur. Oxygen concentration 1.3 × 1
0¹⁸atoms / cm^ThreeIt is quite likely to occur below. (3) Evaluation method Evaluation of wafer slip dislocations is performed by X-ray topographic observation.
The X-ray used was MoKα1, an acceleration voltage of 60 kV,
The current is 300 mA and the diffraction plane is 220. (4) Evaluation results Ten sheets each using Example 2, Comparative Example 3 and Conventional Example
Result of slip evaluation of sample heat-treated sample wafer
Are shown in Table 2.

[0057]

[Table 2] As is clear from the results in Table 2, when Example 2 was used, no slip dislocation was generated, and a large improvement was observed.

In the ring system, although the magnitude of slip is reduced as compared with the conventional four-point support, the state of occurrence of slip is eased, but there is no effect of completely preventing occurrence of slip.

[3] Plate Material and Thickness Test (1) Preparation of Sample Wafer supporting members each having a thickness of 0.4 mm to 1.6 mm made of a silicon single crystal and a silicon polycrystal sintered body (Example 4) Was prepared. (2) Evaluation Method A silicon wafer was placed on a wafer support member made of silicon single crystal and a wafer support member made of a polycrystalline sintered body, and stored and held in a leaf-type susceptor as shown in FIG. Heat treatment by the same heat treatment sequence as
The occurrence of slip was evaluated. (3) Evaluation Results FIG. 6 is a graph showing the evaluation results in a relationship between the thickness of the wafer support member and the number of slips.

As is clear from the results shown in FIG. 6, the heat treatment using the silicon single crystal support member produces more slip than the heat treatment using the silicon polycrystal sintered body wafer support member. Occur.

If the thickness of the wafer support member made of a silicon polycrystalline sintered body is 0.6 mm or less, the wafer support member is deformed by the holding piece, and the deformed portion comes into point contact with the wafer. Slip has occurred from the point contact portion. Also, when the thickness of the wafer support member is 1.4 mm or more, slip occurs at several locations around the wafer, and this occurrence is considered to be caused by heat.

On the other hand, when the wafer is heat-treated using a silicon single-crystal support member, slip occurs even if the thickness of the single-crystal support member is 0.8 to 1.0 mm. In the range of 0.8 to 1.0 mm, there is a clear difference from the silicon sintered body wafer support member in which no slip occurs (see the range A in FIG. 5).

As is clear from FIG. 6, the wafer support member made of the silicon sintered body is more effective in preventing the slip than the single crystal support member, and the thickness of the wafer support member made of the silicon sintered body is zero. It was also confirmed that 0.8 to 1.2 mm was desirable.

[4] Gettering Effect Test of Wafer Support Member (1) Preparation of Sample A 300 mm diameter CZ silicon wafer (P type 5-10
Ωcm), one silicon wafer having a sand blast treatment (SB) on the back surface, and one poly back seal (PBS) wafer having a polysilicon film on the back surface.
Prepare wafers and spin coat each wafer with C
A sample was prepared by removing the u solution and contaminating the wafer surface to about 10 ¹⁴ atoms / cm ² . (2) Evaluation method One of the contaminated CZ wafers was placed on the wafer support member of Example 2 described above (Example 5), placed on a boat, and the remaining CZ wafers (Comparative Example 5), SB The wafer (Comparative Example 6) and the PBS wafer (Comparative Example 7) were also directly placed on the boat, and subjected to the same heat treatment as in the slip evaluation test. Each wafer after the heat treatment is subjected to chemical analysis and measurement of the generation lifetime of the wafer. (3) Evaluation Results Table 3 shows the results of Cu analysis of the surface layer (10 μm) of each wafer after heat treatment and the generated lifetime values after heat treatment.

[0065]

[Table 3]

The silicon wafer (Example 5) supported by Example 2 was compared with Comparative Example 5 which was directly supported at three points by a boat.
As compared with Cu, the Cu contamination is reduced and the lifetime value is also improved, and it is considered that the gettering effect of the silicon sintered body support plate is exhibited. Although it is not as good as Comparative Example 7 in which a polysilicon film is formed in a separate step, the gettering effect is higher than Comparative Example 6 in which the back surface is sandblasted in a separate step. It can be seen that it is.

The member for heat treatment of a semiconductor wafer and the jig using the same according to the present invention not only can prevent the occurrence of slip dislocation due to the high temperature heat treatment of the wafer, but also have a gettering effect on metal contamination of the wafer. And a jig using the same can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view of a jig for heat treating a semiconductor wafer according to the present invention.

FIG. 2 is a perspective view of a wafer support member used for a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 3 is an explanatory view showing a use state of the wafer support member of FIG. 2;

FIG. 4 is a sectional view showing a use state of another embodiment of the jig for heat treating a semiconductor wafer according to the present invention.

FIG. 5 is an explanatory view showing a ring-shaped support portion plate of a comparative example of an evaluation test.

FIG. 6 is a graph showing the results of evaluating the occurrence of slip due to differences in support plates.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 jig for heat treatment of semiconductor wafer 2 member for heat treatment of semiconductor wafer (wafer support member) 3 receiver 4 base 5 opening 6 support 7 holding piece 8 upper fixing plate 9 surface 11 single-wafer susceptor 12 receiver 13 wafer support member 14 Holder 15 Rise D Diameter of wafer support member W Semiconductor wafer

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[Procedure amendment]

[Submission date] October 16, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

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[0016]

According to the first aspect of the present invention, there is provided a thin plate for supporting at least one entire surface of a semiconductor wafer, wherein the thin plate is made of polycrystalline silicon. The gist of the present invention is to provide a member for heat treatment of a semiconductor wafer, comprising a silicon sintered body obtained by sintering a granular material.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction contents]

According to the invention of claim 2 of the present application, the polycrystalline silicon granular material has an average crystal grain size of 3 to 25 μm, and is characterized in that it is a member for heat treatment of a semiconductor wafer according to claim 1. I have.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction contents]

[0018] In the invention of claim 3, said thin plate member is a disc shape, when the diameter and Dmm, the thickness ^{(D / 2) 2 / 18000~} (D / 2) 2 / 28500m
The gist of the invention is a member for heat treatment of a semiconductor wafer according to claim 1 or 2, wherein

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0019

[Correction method] Change

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According to a fourth aspect of the present invention, there is provided a semiconductor wafer heat treatment member comprising a polycrystalline silicon particle having an average crystal grain size of 3 to 25 μm and a receiving member for receiving the member. The gist is that it is a jig.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

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[0020] In the invention of claim 5, the semiconductor wafer heat-treating member is a disc-shaped thin plate member, when the diameter and Dmm, the thickness (D / ²⁾ 2/1800
Is summarized in that a ^{0~ (D / 2) 2 /} 28500mm a wafer heat treatment jig according to claim 4, characterized in that.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

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According to a sixth aspect of the present invention, the semiconductor wafer heat treatment member is held by a holding portion provided on the receiver, and is detachably disposed on the receiver. Or the jig for heat treatment of a semiconductor wafer described in 5 above.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0022

[Correction method] Change

[Correction contents]

According to a seventh aspect of the present invention, the receiving member has a holding portion for disposing the semiconductor wafer heat treatment member at a predetermined interval. The gist is to be a jig for heat treatment of a semiconductor wafer.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0023

[Correction method] Change

[Correction contents]

According to an eighth aspect of the present invention, in the semiconductor wafer heat treatment apparatus according to the sixth aspect of the present invention, the receiver has a holding portion for fixing the one semiconductor wafer heat treatment member in a horizontal direction. The gist is that it is a tool. According to the invention of claim 9 of the present application, the gist is that the jig for heat treatment of a semiconductor wafer according to claim 7 is characterized in that the receiver is a vertical boat. ────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] November 17, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

Further, high temperature heat treatment (1100 ° C. to 1250
° C) has the disadvantage that the slip is likely to occur as described above and that the semiconductor wafer is contaminated with heavy metals. This is because heavy metals contained in the furnace members of the vertical heat treatment furnace are released into the furnace by thermal diffusion during high-temperature treatment, and contaminate the semiconductor wafer. ────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] July 29, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

Further, a boat for a vertical heat treatment furnace having a structure in which a semiconductor wafer is supported in line contact in a ring shape instead of the above-mentioned semicircular support member has been proposed. This boat has a ring-shaped holding portion. It is difficult to manufacture accurately,
There is a problem in the support accuracy, and the support is practically performed at three or four points, and the slip problem of the wafer has not been solved.

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0029

[Correction method] Change

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The surface 9 of the wafer support member 2 supporting the semiconductor wafer W is formed so that the unevenness is 0.1 mm or less over the entire surface 9.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroyuki Goto 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Co., Ltd. Inside

Claims (8)

[Claims] 1. A heat treatment apparatus for a semiconductor wafer, comprising: a thin plate supporting at least one entire surface of a semiconductor wafer, wherein the thin plate comprises a silicon sintered body obtained by sintering polycrystalline silicon particles. Element. 2. The method according to claim 1, wherein the polycrystalline silicon particles have a particle size of 3 to 25 μm.
The member for heat treating a semiconductor wafer according to claim 1, wherein the member has an average crystal grain size of m. Wherein said thin plate member is a disc shape, when the diameter and Dmm, the thickness (D / ^{2) 2/1800
0~ (D / 2) 2 /} 28500mm a semiconductor wafer heat treatment member according to claim 1 or 2, characterized in that. 4. A jig for heat treatment of a semiconductor wafer, comprising a member for heat treatment of a semiconductor wafer and a receiver for receiving the member. 5. The semiconductor wafer heat treatment according to claim 4, wherein the semiconductor wafer heat treatment member is held by a holder provided on the receiver, and is detachably disposed on the receiver. Jig. 6. The jig for heat treatment of a semiconductor wafer according to claim 5, wherein the receiving member has a holding portion in which the members for heat treatment of the semiconductor wafer are arranged at predetermined intervals. 7. The jig for heat treatment of a semiconductor wafer according to claim 5, wherein said receiving member has a holding portion for fixing one semiconductor wafer heat treatment member in a horizontal direction. 8. The jig for heat treating a semiconductor wafer according to claim 6, wherein said receiver is a vertical boat.