JP2002043239A - Jig for heat treating semiconductor wafer and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a jig for heat treating semiconductor wafer and a method for manufacturing the same causing no crystal defect such as slip on the semiconductor wafer under high temperature heat treatment. SOLUTION: The jig for heat treating a semiconductor wafer and the method for manufacturing the same comprises a wafer holding member formed capable of holding the semiconductor wafer, and a holding surface built on the wafer holding member for contacting and holding the semiconductor wafer with powder of heat-resistant high purity materials adhering on the same.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jig for heat treatment of a semiconductor wafer suitable for heat treatment of a semiconductor wafer and a method of manufacturing the same, and more particularly to a heat treatment for a semiconductor wafer in which powder of a heat-resistant high-purity material is adhered to a wafer support surface. The present invention relates to a jig and a method for manufacturing the same.

[0002]

2. Description of the Related Art When heat-treating a semiconductor wafer, a vertical heat treatment boat is generally used in a vertical heat treatment furnace as shown in FIG. if it is supporting lifting the semiconductor wafer W ₀ in the support surface 44, or the support surface of the support portion longer, and supports little inward from the outermost. Further, the semiconductor wafer is supported on the entire surface by using a plate-like wafer support member without using the support groove.

[0003] processing boat 41 which is used to support these semiconductor wafers W ₀ are quartz, single crystal silicon, polycrystalline silicon, silicon carbide, and a material variety.

[0004] support surface 44 (contact surface) of these processes boat 41 and the semiconductor wafer W ₀ is etched or smooth or is often in a state of being processed into irregularities,,.

[0005] equipped with a semiconductor wafer W ₀ in the processing boat 41 of such a state, in a vertical heat treatment furnace has been subjected to a heat treatment.

When heat treatment is performed in a vertical heat treatment furnace, FIG.
As shown in FIG. 2 and FIG. 13, when the processing boat 41 supporting the semiconductor wafer W ₀ at the outermost peripheral portion W ₀ p is used, regardless of the processing state of the position of the semiconductor wafer supporting surface of the processing boat 41. to support the semiconductor wafer W ₀ horizontally is difficult, substantially becomes a point support, stress concentration tends to occur starting from the semiconductor wafer support portion. Further, in the case of a boat in which the entire surface of a semiconductor wafer is supported by a plate-shaped wafer supporting member, it is difficult to perform a process of obtaining a levelness over the entire surface, and in this case, it is also substantially a point support.

[0007] Therefore, in particular, when the semiconductor wafer is subjected to a high-temperature heat treatment of 1000 ° C. or more during the device manufacturing process, there is a possibility that a crystal defect called a slip originates from the supporting portion of the semiconductor wafer.

[0008] Since such crystal defects cause a reduction in the material properties of the semiconductor wafer and, consequently, a reduction in the yield in the device process, it is necessary to suppress the occurrence thereof.

[0009]

Therefore, there has been a demand for a jig for heat treatment of a semiconductor wafer which does not generate crystal defects such as slips on the semiconductor wafer even if the heat treatment is performed at a high temperature, and a method of manufacturing the same.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a jig for heat treatment of a semiconductor wafer in which crystal defects such as slips do not occur in the semiconductor wafer even when heat treatment is performed at a high temperature, and a method of manufacturing the same. The purpose is to:

[0011]

Means for Solving the Problems In order to achieve the above object, the invention of claim 1 of the present application provides a wafer support member formed to support a semiconductor wafer and a semiconductor wafer provided on the wafer support member. A jig for heat treatment of a semiconductor wafer characterized by having a supporting surface for supporting, and a powder of a heat-resistant high-purity material adhered to the supporting surface.

In the invention of claim 2 of the present application, the wafer support member and the powder of the heat-resistant high-purity material are any one of single-crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. The gist of the present invention is a jig for heat treatment of a semiconductor wafer according to claim 1.

In the invention of claim 3 of the present application, the maximum frequency of the particle size of the powder of the heat resistant high-purity material at intervals of 0.2 μm is in the range of 2.4 to 3.4 μm, and the maximum particle size is 3 times or less the maximum frequency particle size, the minimum particle size is 1 of the maximum frequency particle size
3. The jig for heat treatment of a semiconductor wafer according to claim 1, wherein the ratio of particles having the maximum frequency particle diameter within / 3 is controlled to 40% or more of the total number of particles. The gist is that.

[0014] In a fourth aspect of the present invention, at least a support surface of the wafer support member to which the powder of the heat-resistant high-purity material is attached is covered with a CVD film of the heat-resistant high-purity material. The gist is a jig for heat treatment of a semiconductor wafer according to item 1 or 2.

According to a fifth aspect of the present invention, a heat-resistant high-purity material is uniformly added to a heat-resistant high-purity material by adding the powder to the aqueous solution, stirring the solution, and immersing the heat treatment jig or the wafer support member in the aqueous solution. The gist of the present invention is to provide a method for manufacturing a jig for heat treatment of a semiconductor wafer, which comprises attaching powder.

In the invention of claim 6 of the present application, a heat treatment jig or a wafer supporting member to which the powder of the heat-resistant high-purity material is attached is disposed in a CVD furnace, and the powder is placed on at least a supporting surface of the wafer supporting member. A gist of the invention is a method for manufacturing a jig for heat treatment of a semiconductor wafer according to claim 5, wherein a CDV film made of a heat-resistant high-purity material is formed so as to cover the jig.

In the invention of claim 7 of the present application, the wafer support member, the powder of the heat-resistant high-purity material and the CVD film are any one of single-crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. A gist of the invention is a method for manufacturing a jig for heat treating a semiconductor wafer according to claim 5 or 6.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a jig for heat treatment of a semiconductor wafer and a heat treatment method according to the present invention will be described with reference to the accompanying drawings.

As shown in FIGS. 1 and 2, a jig for heat treatment of a semiconductor wafer according to the present invention, for example, a vertical wafer boat 1, has a base 2 and a column-shaped wafer support provided on the base 2. A member 3, a support groove 4 formed in the wafer support member 3, a support surface 5 formed on the lower surface of the support groove 4 to support the semiconductor wafer W, and a top plate provided above the wafer support member 3. 6.

A base 2 constituting the vertical wafer boat 1
The material of the wafer support member 3 and the top plate 6 is preferably single crystal silicon, high-purity polycrystalline silicon, or high-purity silicon carbide because it hardly contains metal impurities. In particular, single crystal silicon having higher purity is preferable.

When these materials are used, 1000
Even when heat treatment is performed at a high temperature of not less than ° C., there is a cost advantage that it is hardly deformed and can be used for a long time.

A powder of a heat-resistant high-purity material, for example, a single-crystal silicon powder 7 is adhered to the surface of the vertical wafer boat 1, at least the support surface 5 that supports the semiconductor wafer W.

The single crystal silicon powder 7 may be adhered to the surface of the vertical wafer boat 1 by holding it more firmly, for example, by welding the single crystal silicon powder to the surface of the vertical wafer boat by heat treatment at a high temperature of 1000 ° C. or more. Preferably.

By doing so, it is possible to reduce the risk that the single-crystal silicon powder adheres from the surface of the vertical wafer boat to the front surface or the back surface of the semiconductor wafer during the heat treatment and becomes foreign matter on the semiconductor wafer.

The use of the single crystal silicon powder 7 is most preferable because it contains almost no metal impurities. Further, a material that is less likely to be contaminated by metal impurities or the like, that is, high-purity polycrystalline silicon, high-purity silicon carbide, or the like can be used as a substitute for single-crystal silicon powder. When using other materials,
It is not preferable because the semiconductor wafer may be contaminated during the heat treatment, the characteristics of the semiconductor wafer may be changed or deteriorated, or the semiconductor wafer may be contaminated.

When single crystal silicon is used as the powder of the heat-resistant high-purity material, the vertical wafer boat is preferably made of single-crystal silicon or high-purity silicon. In this way, by using the same or the same material for both, stronger adhesion is enabled.

The single crystal silicon powder 7 adhered to the surface of the vertical wafer boat 1 has a maximum frequency of distribution of the particle size at intervals of 0.2 μm in the range of 2.4 to 3.4 μm, and a maximum particle size of 2.4 to 3.4 μm. The ratio of particles occupied by the particles having the maximum frequency is controlled to be at least 40% of the total number of particles, with the particle diameter having the maximum frequency being less than three times the particle size having the maximum frequency and the particle diameter having the minimum particle size being within 1/3 of the particle diameter having the maximum frequency. Is preferred for the reasons described below.

The single crystal silicon powder is more preferably spherical, but the surface of the single crystal silicon ingot is mechanically pulverized and pulverized, and the surface thereof is mixed with hydrofluoric acid and nitric acid at a predetermined concentration to form a surface. It is preferable that the surface is smoothed by etching.

As shown in FIG. 3, this is achieved by controlling the single crystal silicon powder to a predetermined particle size, and conventionally, the semiconductor wafer depends on the surface shape of the supporting surface for supporting the semiconductor wafer of the vertical wafer boat. Is supported at a plurality of points, so that stress distribution can be achieved, and the occurrence of slip can be suppressed during the heat treatment step of the semiconductor wafer.

As described above, regardless of the shape of the support surface 5 of the vertical wafer boat 1, the horizontality when the semiconductor wafer W is supported is determined only by the control of the particle size of the silicon powder.

Since the single-crystal silicon powder having a controlled particle size fits into the concave portion of the support surface 5 of the vertical wafer boat 1, it covers the unevenness of the support surface 5 and supports the semiconductor wafer W at a plurality of points. Thus, the semiconductor wafer W can be supported horizontally. By supporting horizontally at multiple points,
It is possible to disperse the stress at the support portion, and it is possible to suppress the occurrence of slip. As described above, by controlling the particle diameter to a predetermined value, it is possible to fill unevenness in a well-balanced manner, thereby suppressing the occurrence of slip.

On the other hand, when the minimum particle diameter of the single crystal silicon powder is smaller than a predetermined value, the unevenness of the support surface of the vertical wafer boat cannot be filled, and as a result, the support becomes a point support and a slip occurs. Easy to cause. If the maximum particle size is larger than a predetermined value, the irregularities are filled, but on the other hand, they are too large, so that they are point-supported, which is likely to cause slip.

As described above, the jig 1 for heat treatment of a semiconductor wafer has the single crystal silicon powder 7 adhered to the support surface 5 of the wafer support member 3. When the heat treatment is performed, as shown in FIGS. 2 and 3, stress dispersion can be achieved by supporting the semiconductor wafer at a plurality of points, and crystal defects such as slips do not occur in the semiconductor wafer.
Further, the wafer support member 3 and the single crystal silicon powder 7
Is not melted and adhered to the semiconductor wafer W, or the semiconductor wafer W is not contaminated with metal.

Next, a first modification of the above embodiment will be described.

In the first modified example, the supporting surface of the supporting groove for supporting the semiconductor wafer is formed in a plurality of columnar wafer supporting members in the embodiment, whereas the semiconductor wafer is formed in a thin disk shape. The entire surface is supported by a support surface formed on the wafer support member.

For example, as shown in FIG. 4, a jig 11 for heat treatment of a semiconductor wafer according to a first modification includes a thin disk-shaped wafer support member 12 on which a wafer W is placed, and a wafer support member 12. It is composed of a column 13 which is detachably received. The support 13 is erected on a disk-shaped base 14, a ceiling fixing material 15 is provided, and an opening 16 is formed.

The wafer support member 12 on which the wafer W is mounted is inserted through the opening 16, is mounted on each support piece 17 of the support 13, and is removably housed and arranged on the wafer support member 12. .

The wafer supporting member 12 has a diameter D of 300.
It is a sintered body obtained by sintering granular polycrystalline silicon having a thickness of 1.0 mm, a thickness of 1.0 mm, a disk shape, and an average particle size of 3 to 25 μm, for example, 8 μm.

On the surface of the wafer support member 12, at least a support surface 18 for supporting the semiconductor wafer W, a single crystal silicon powder 19 having a controlled particle size is adhered.

Single crystal silicon powder 19 having a controlled particle size
Is fitted into the concave portion of the support surface 18 of the wafer support member 12, so that the unevenness of the support surface 18 can be covered, the semiconductor wafer W can be supported at a plurality of points, and the semiconductor wafer W can be supported horizontally. . By supporting horizontally at a plurality of points, the stress on the support surface 18 can be dispersed,
It is possible to suppress the occurrence of slip. By controlling the particle size to the predetermined particle size in this way, it is possible to fill unevenness in a well-balanced manner, and it is possible to suppress the occurrence of slip.

The disk-shaped wafer support member 12
May be placed on a disk-shaped base 23 as shown in FIG. 5 and used in a second modification described later, and used as a single-wafer susceptor.

Next, a second modification of the above embodiment will be described.

The second modified example is different from the first modified example in that the semiconductor wafer is entirely supported by the support surface formed on the thin disk-shaped wafer support member, whereas the semiconductor wafer is thinly formed in the thin ring shape. It is supported by a support surface formed on the wafer support member.

For example, the semiconductor wafer heat treatment jig 21 of the second modified example is a single-wafer type susceptor, and a thin ring-shaped wafer support member 22 on which a wafer W is mounted, and this wafer support member 22 is detachably attached. The receiving base 23 is configured.

Wafer support plate 2 on which wafer W is mounted
2 is mounted on the support ring 24 of the base 23.

The wafer supporting member 22 has an outer diameter of 300 m.
m, a thin plate having a thickness of 1.0 mm and a ring shape, for example, a sintered body obtained by sintering granular polycrystalline silicon having a thickness of 8 μm and supporting the surface of the wafer support member 22, at least the semiconductor wafer W. A polycrystalline silicon powder 26 having a controlled particle diameter is attached to the support surface 25.

Polycrystalline silicon powder 26 having a controlled particle size
Is fitted into the concave portion of the support surface 25 of the wafer support member 22, so that the unevenness of the support surface 25 is covered, the semiconductor wafer W is supported at a plurality of points, and the semiconductor wafer W can be supported horizontally. By supporting horizontally at a plurality of points, the stress on the support surface 25 can be dispersed, and the occurrence of slip can be suppressed.

As described above, by controlling the particle size to a predetermined particle size, it is possible to fill unevenness in a well-balanced manner and to suppress occurrence of slip.

Next, a third modification of the above embodiment will be described.

The third modification is different from the second modification in that a semiconductor wafer is supported by a support surface formed on a thin ring-shaped support plate placed on a base, whereas a wafer serving also as a base is supported. The semiconductor wafer is supported by a ring-shaped support surface provided on the support member.

For example, as shown in FIG. 6, the semiconductor wafer heat treatment jig 31 of the third modified example is a single wafer type susceptor, and a ring-shaped wafer support member 32 on which a wafer W is placed and which also serves as a base. The wafer support member 32 is provided with a ring-shaped support surface 33. Further, a polycrystalline silicon powder 34 having a controlled particle diameter is attached to the support surface 33, and the surface of the polycrystalline silicon powder 33 and the entire surface of the wafer support member are covered with a CVD film made of polysilicon. It has a structure.
Since the polycrystalline silicon powder 34 having a controlled particle diameter is air-tightly covered with a CVD film made of polysilicon, it is possible to reduce the risk of the polycrystalline silicon powder falling off due to mechanical shock. In addition, as in the above-described embodiment, the unevenness of the support surface 33 is covered, and the semiconductor wafer W can be supported at a plurality of points.

Next, a first embodiment of a method for manufacturing a jig for heat treating a semiconductor wafer according to the present invention will be described.

The manufacturing method according to the first embodiment is performed according to the flow shown in FIG.

Heat resistant powder of a high purity material is added to an aqueous solution filled in a water tank (ST1).

Next, the aqueous solution is sufficiently stirred to uniformly disperse the powder (ST2).

If it is not uniform, it will not be possible to support a plurality of points at the portion supporting the Si wafer, which will cause slip.

Thereafter, the semiconductor wafer heat treatment jig manufactured in advance is placed in a water tank, and the powder is uniformly attached to the semiconductor wafer heat treatment jig while stirring (ST3).

In this manner, the powder can be uniformly and reliably adhered to the heat treatment jig for heat treatment of powdered semiconductor wafers of high-purity material.

The semiconductor wafer heat treatment jig to which the powder has adhered is dried (ST4).

Further, the jig for heat treatment of a semiconductor wafer is placed in a heat treatment furnace, and high-temperature heat treatment is performed in a reducing atmosphere at 1000 ° C. or higher (ST5).

As described above, by performing the high-temperature heat treatment,
As shown in FIG. 8, the silicon powder is welded to the surface of the jig for heat treatment of a semiconductor wafer, and the silicon powder and the wafer support member (support surface) are firmly welded. Further, when a high-temperature heat treatment at 1000 ° C. or higher in a reducing atmosphere is performed, rearrangement of the silicon surface occurs, and the silicon powder and the jig for heat treatment of the semiconductor wafer are more firmly welded.
On the other hand, when the heat treatment is not performed in a reducing atmosphere, for example, when the heat treatment is performed in an oxygen atmosphere, the silicon powder and the jig for heat treatment of the semiconductor wafer are only oxidized, and the welding of the silicon powder hardly occurs. Therefore, it is preferable that the heat treatment for firmly welding the silicon powder be performed in a reducing atmosphere.

Next, a second embodiment of the method for manufacturing a jig for heat treating a semiconductor wafer according to the present invention will be described.

The manufacturing method according to the second embodiment is different from the manufacturing method according to the first embodiment in that the heat-resistant high-purity material is held firmly in a jig for heat-treating a semiconductor wafer. A heat-resistant high-purity material CVD film is formed on the heat-resistant high-purity material powder on at least the supporting surface of the wafer support member to which the material powder is attached, and the CVD film is used to convert the powder into a semiconductor wafer heat treatment jig. It is a method of holding firmly.

[0064] For example, as shown in FIG. 9, filled with powders of heat-resistant and high-purity materials in a water bath, preferably added in an aqueous solution containing a binder (ST 2 _1).

Next, the aqueous solution was sufficiently stirred, to powder uniformly dispersed _(ST 2 2).

Thereafter, the semiconductor wafer heat treatment jig manufactured in advance is placed in a water tank, and the powder is uniformly attached to the semiconductor wafer heat treatment jig while stirring (ST).
₂ 3).

The powder may be adhered by spraying it with air or by sprinkling it on necessary parts.

[0068] powder to dry the semiconductor wafer heat treatment jig attached _(ST 2 4).

[0069] Further, placed in CVD furnace, a CVD film of heat-resistant and high-purity material, is formed on the powder of heat-resistant and high-purity material of the surface of the semiconductor wafer heat treatment jig (ST 2 _5).

In the manufacturing method of the present embodiment,
The heat-resistant high-purity material powder preferably has a particle size of 5 to 20 μm, and a film thickness of 30 to 70 μm.

The particle size of the powder is less than 5 μm or 20
If the thickness exceeds μm, it becomes difficult to substantially support the semiconductor wafer at multiple points. The film thickness is 30
If it is less than μm, the effect of further suppressing the risk of the powder falling off cannot be sufficiently obtained, and if it is more than 70 μm, the surface formed by the powder will be flattened rather than unevenness.

During the LP-CVD process at the time of device manufacture,
Conventionally, in order to prevent metal impurities in the substrate used for the jig for heat treatment of semiconductor wafers from diffusing into the semiconductor wafer, the surface of the substrate is conventionally roughened and irregularities are formed, and a CVD film is formed on the irregularities. However, it takes time to form the irregularities, and the CVD film formed on the irregular surface cannot be formed with sufficient irregularities, so that the semiconductor wafer adheres to the CVD film during the LP-CVD process. Often do.

However, in the manufacturing method of the second embodiment,
Since a CVD film of a heat-resistant high-purity material is formed on a heat-resistant high-purity material powder adhered to a jig for heat treatment of a semiconductor wafer, the risk of the powder falling off due to mechanical shock can be further reduced. It is possible to cover the unevenness of the support surface 18 of the wafer support member 12, support the semiconductor wafer W at a plurality of points, and support the semiconductor wafer W horizontally, similarly to the manufacturing method of the first embodiment described above. Becomes possible. By supporting horizontally at a plurality of points, the support surface 18
Can be dispersed, and the occurrence of slip can be suppressed. By controlling the particle size to the predetermined particle size in this way, it is possible to fill unevenness in a well-balanced manner, and it is possible to suppress the occurrence of slip. LP-
The semiconductor wafer does not adhere to the CVD film during the CVD process.

[0074]

EXAMPLES (Test 1) Test method: In the jig for heat treatment of a semiconductor wafer according to the present invention, the particle size of heat-resistant high-purity material powder was 0.2 μm.
The maximum frequency of distribution at intervals is in the range of 2.4 to 3.4 μm, the maximum particle size is 3 times or less of the maximum frequency particle size, and the minimum particle size is within 1/3 of the maximum frequency particle size. After adding the single crystal silicon powder in which the ratio of the particles having the maximum frequency particle diameter is controlled to 40% or more of the total number of particles to the ultrapure water and stirring it well, the heat treatment boat made of single crystal silicon is added. It was immersed in this ultrapure water for 10 minutes. Thereafter, the boat was thoroughly dried, and heat-treated at 1250 ° C. for 30 minutes in a hydrogen atmosphere, so that the single-crystal silicon powder was firmly welded to the boat surface (Example 1). The same treatment was applied to a high-purity polycrystalline silicon heat treatment boat, and the same single-crystal silicon powder as in Example 1 was firmly welded to the boat surface (Example 2).

A silicon wafer having a diameter of 200 mm and a thickness of 726 μm was placed on each of the manufactured Examples 1 and 2 and heat-treated at 1200 ° C. for 1 hour in a hydrogen atmosphere. For comparison, a heat treatment boat made of a conventional single crystal silicon to which no silicon powder was welded was used, and a similar sample was used and heat treatment was performed under similar conditions (conventional example).

Test results: FIG. 10 shows a comparison of the slip occurrence ratio. It was confirmed that the occurrence rate of slip was significantly suppressed in both Example 1 and Example 2 as compared with the conventional example.

(Test 2) Test method: A polycrystalline silicon powder controlled to a particle size specified in a jig for heat treatment of a semiconductor wafer according to the present invention was sprinkled in a single crystal silicon heat treatment boat in the atmosphere. Heat treatment was performed at 1260 ° C. for 30 minutes in a hydrogen atmosphere (Example 3). Next, in Example 3, the diameter 200
A silicon wafer having a thickness of 725 μm and a thickness of 725 mm was placed, and heat treatment was performed at 1200 ° C. for 1 hour in a hydrogen atmosphere.

Test results: When the slip occurrence ratio was compared, as shown in FIG.
Although the effect was recognized, it was found that it did not reach Examples 1 and 2.

(Test 3) Test method: A jig for heat treatment of a semiconductor wafer according to the present invention and a high-purity silicon carbide powder controlled to a particle size specified in a method for manufacturing the same were added to ultrapure water and stirred well. Thereafter, the heat treatment boat made of high-purity silicon carbide was immersed in the ultrapure water for 10 minutes. Thereafter, the mixture was thoroughly dried and heat-treated at 1200 ° C. for 60 minutes in an argon atmosphere (Example 4).

Next, a silicon wafer having a diameter of 200 mm and a thickness of 725 μm was placed on this Example 4 and heat-treated at 1200 ° C. for 1 hour in an argon atmosphere.

Test Results: As a result of comparing the slip occurrence rates, as shown in FIG. 10, it was confirmed that the slip occurrence rate was significantly suppressed in Example 4 as compared with the conventional example.

(Test 4) Test method: In the jig for heat treatment of a semiconductor wafer according to the present invention and the method for manufacturing the same, the maximum frequency (45% )
Is in the range of 4.0 to 4.2 μm, and the maximum particle size is 15
A single crystal silicon powder having a minimum particle size of 0.5 μm and controlled to 0.5 μm was added to ultrapure water, and the mixture was thoroughly stirred. Then, a single crystal silicon heat treatment boat was immersed in the ultrapure water for 10 minutes. After that, it is dried well and 1250 ° C in a hydrogen atmosphere.
Heat treatment was performed for 30 minutes (Example 5).

Next, a silicon wafer having a diameter of 200 mm and a thickness of 726 mm was set in Example 5 and heat-treated at 1200 ° C. for 1 hour in a hydrogen atmosphere.

Test results: Comparison of the rate of occurrence of slips showed that Example 5 showed an effect as compared with the conventional example, but did not reach Example 1, as shown in FIG.

(Test 5) Test method: 2 kg of silicon carbide powder having a particle size of 5 to 20 μm was added to 200 l of water, and the mixture was stirred so as not to precipitate. A Si-SiC boat was immersed in this aqueous solution, taken out and dried, and then a SiC-CVD film was applied thereto (Example 6).

Using Example 6 and Conventional Example 2 in which a SiC-CVD film was formed without adhering silicon carbide powder, LP-CVD of polysilicon was continuously performed, and several of the 35 semiconductor wafers were used. SiC-C formed on the support surface
It was examined whether it adhered to the VD film.

Test results: The results are shown in FIG. Example 6
It was confirmed that the number of adhered sheets was extremely small, ie, 0 sheets up to the 15th time and 2 sheets even at the 20th time.

On the other hand, in the second embodiment, the fourth
In the case of 15 sheets, it was confirmed that about half of the sheets adhered to 20 sheets.

[0089]

According to the jig for heat treatment of a semiconductor wafer and the method of manufacturing the same according to the present invention, the jig for heat treatment of a semiconductor wafer which does not generate a crystal defect such as a slip on the semiconductor wafer even when the heat treatment is performed at a high temperature, and the jig. A manufacturing method can be provided.

That is, since the powder of the heat-resistant high-purity material is adhered to the support surface formed on the wafer support member and supporting the semiconductor wafer, the semiconductor wafer is supported at a plurality of points by the powder of the heat-resistant high-purity material. By doing so, stress distribution can be achieved, and the occurrence of slip during the semiconductor wafer heat treatment step can be suppressed.

The powder of the wafer support member and the heat-resistant high-purity material is any one of single crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. The powder does not melt during the semiconductor wafer heat treatment process and adheres to the semiconductor wafer or does not contaminate the semiconductor wafer.

The heat resistant high purity material powder of 0.2 μm
Maximum frequency of particle size of distribution at m intervals is 2.4 to 3.4 μm
Where the maximum particle size is 3 times or less the maximum frequency particle size,
The minimum particle size is within 1/3 of the maximum frequency particle size, and the ratio of the particles with the maximum frequency particle size is controlled to 40% or more of the total number of particles. Stress dispersion can be achieved, the occurrence of slip can be suppressed, and further, regardless of the shape of the support surface, the semiconductor wafer is supported only depending on the control state of the particle size of the powder of the heat-resistant high-purity material. You can decide the level when you are. Also,
Since the silicon powder having a controlled particle size fits into the concave portion of the support surface, it can cover the unevenness of the support surface, support the semiconductor wafer at a plurality of points, and horizontally support the semiconductor wafer.

Since at least the supporting surface of the wafer supporting member to which the powder of the heat-resistant high-purity material is adhered is covered with the CVD film of the heat-resistant high-purity material, the powder of the heat-resistant high-purity material is subjected to mechanical shock. Can reduce the risk of falling off, and cover the unevenness of the support surface,
The semiconductor wafer can be supported at a plurality of points.

A semiconductor in which a powder of a heat-resistant high-purity material is uniformly adhered by adding and stirring a powder of a heat-resistant high-purity material in an aqueous solution and immersing a heat treatment jig or a wafer support member in the aqueous solution. Since the method is a method for manufacturing a jig for heat treatment of a wafer, it is possible to uniformly and reliably adhere a powder of a heat-resistant and high-purity material to the support surface of the jig for heat treatment of a semiconductor wafer.

Further, a heat treatment jig or a wafer supporting member to which a powder of a heat-resistant high-purity material is adhered is placed in a CVD furnace, and at least the supporting surface of the wafer supporting member is covered with the heat-resistant high-purity material so as to cover the powder. Since it is a method for manufacturing a wafer heat treatment jig for forming a CDV film made of a material, the risk of powder falling off due to mechanical shock can be further reduced, and the unevenness of the support surface of the wafer support member can be covered. By supporting the semiconductor wafer at a plurality of points and horizontally supporting the semiconductor wafer at the plurality of points, it is possible to disperse the stress on the support surface and suppress occurrence of slip. Further, by controlling the particle size to a predetermined particle size, it is possible to fill unevenness in a well-balanced manner, and it is possible to suppress the occurrence of slip. Also, LP-CVD
The semiconductor wafer does not adhere to the CVD film during the process.

The wafer support member and the heat-resistant high-purity material powder may be any one of single-crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. The jig for heat treatment of the manufactured semiconductor wafer may melt the powder of the wafer support member and the heat-resistant high-purity material during the heat treatment process of the semiconductor wafer, adhere to the semiconductor wafer, or contaminate the semiconductor wafer with metal. Absent.

[Brief description of the drawings]

FIG. 1 is a perspective view of a jig for heat treating a semiconductor wafer according to the present invention.

FIG. 2 is a partial cross-sectional view of a jig for heat treating a semiconductor wafer according to the present invention.

FIG. 3 is a conceptual diagram showing a state of adhesion of powder of a heat-resistant high-purity substance on a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 4 is a perspective view of a first modification of the jig for heat treating a semiconductor wafer according to the present invention.

FIG. 5 is a sectional view of a second modification of the jig for heat treating a semiconductor wafer according to the present invention.

FIG. 6 is a sectional view of a third modification of the jig for heat treating a semiconductor wafer according to the present invention.

FIG. 7 is a flowchart of a first embodiment of a method for manufacturing a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 8 is a phase diagram of a heat-resistant high-purity substance powder deposited by the first embodiment of the method for manufacturing a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 9 is a flowchart of a second embodiment of a method for manufacturing a jig for heat treating a semiconductor wafer according to the present invention.

FIG. 10 is a view showing a result of a heat treatment test using a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 11 is a view showing a result of a heat treatment test using a jig for heat treatment of a semiconductor wafer according to the present invention.

FIG. 12 is a cross-sectional view of a part of a conventional semiconductor wafer heat treatment jig.

FIG. 13 is a conceptual diagram showing a state in which a semiconductor wafer is supported by a conventional semiconductor wafer heat treatment jig.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 vertical wafer boat 2 base 3 wafer support member 4 support groove 5 support surface 6 top plate 7 single crystal silicon powder 11 jig for heat treatment of semiconductor wafer 12 wafer support member 13 support 14 base 15 ceiling fixing material 16 opening 17 Supporting piece 18 Support surface 19 Single crystal silicon powder 21 Semiconductor wafer heat treatment jig 22 Wafer support member 23 Base 24 Support ring portion 25 Support surface 26 Single crystal silicon powder 31 Semiconductor wafer heat treatment jig 32 Wafer support member 33 Support surface 34 single crystal silicon powder W semiconductor wafer

Claims (7)

[Claims] 1. A wafer support member formed to support a semiconductor wafer, and a support surface provided on the wafer support member for supporting a semiconductor wafer, wherein a powder of a heat-resistant high-purity material is coated on the support surface. A jig for heat treatment of a semiconductor wafer, wherein the jig is attached. 2. The method according to claim 1, wherein the wafer support member and the heat-resistant high-purity material powder are any one of single-crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. Jig for semiconductor wafer heat treatment. 3. The heat-resistant high-purity powder of 0.2 μm
Maximum frequency of particle size of distribution at m intervals is 2.4 to 3.4 μm
Where the maximum particle size is 3 times or less the maximum frequency particle size,
3. The method according to claim 1, wherein the minimum particle size is within one-third of the maximum frequency particle size, and the ratio of the particles having the maximum frequency particle size is controlled to 40% or more of the total number of particles. 3. The jig for heat treating a semiconductor wafer according to item 1. 4. The wafer support member according to claim 1, wherein at least a support surface of the wafer support member to which a powder of a heat-resistant high-purity material is adhered is covered with a CVD film of a heat-resistant high-purity material. Jig for semiconductor wafer heat treatment. 5. A method in which a heat-resistant high-purity material powder is added to an aqueous solution, stirred, and a heat-treating jig or a wafer support member is immersed in the aqueous solution to uniformly adhere the heat-resistant high-purity material powder. A method of manufacturing a jig for heat treatment of a semiconductor wafer. 6. A heat treatment jig or a wafer support member to which the powder of the heat-resistant high-purity material is attached is placed in a CVD furnace, and at least the heat-resistant high-purity material is covered on the support surface of the wafer support member so as to cover the powder. 6. The method for manufacturing a jig for heat treating a semiconductor wafer according to claim 5, wherein a CDV film of a pure material is formed. 7. The wafer supporting member, the powder of a heat-resistant high-purity material and the CVD film are any one of single-crystal silicon, high-purity polycrystalline silicon, and high-purity silicon carbide. 7. The method for manufacturing a jig for heat treating a semiconductor wafer according to item 6.