JPH11330802A - Phase shifter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To weaken resonance between semiconductor devices and to enable wide-band operation with a small phase shift amount error by respectively providing a phase shift means for changing the passing phases of high frequency signals inside first and second phase shift circuits. SOLUTION: A phase shifter 6a for changing the passing phase of the high frequency signal is provided between phase shift circuits 5a1 and 5a2 inside the first phase shift circuit, and similarly a phase shifter 6b for changing the passing phase of the high frequency signal is provided between phase shift circuits 5b1 and 5b2 inside the second phase shift circuit. The phase shifter 6a consists of an FET 4e and a strip conductor 7a and operated as a phase shifter, while setting the strip conductor 7a so as to change the passing phase by turning on/off the FET 4e. The phase shifter 6b is similarly constituted. As a result, since losses due to the phase shifters 6a and 6b inside the phase shift circuits are increased without increasing the overall loss, when reflection occurs at an FET 4a or 4b, 4c or 4d, the resonance between these semiconductor devices is weakened and wide-band operation becomes possible.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a microwave band,
The present invention relates to a phase shifter operating in a millimeter wave band.

[0002]

2. Description of the Related Art FIG. FIG. 5 is a circuit diagram showing a conventional phase shifter similar to that shown in FIG. 55, and FIG. 5 is a structural diagram thereof. In these figures, 1 is a dielectric substrate,
2a, 2b are input / output terminals, 4a-4h are FETs, 5a-
5d is a phase shift circuit, and 6a and 6b are phase shifters.

Next, the operation will be described. The high-frequency signal input to the input / output terminal 2a is input to the FETs 4a and 4b. When the FETs 4a and 4c are ON and the FETs 4b and 4d are OFF, the high-frequency signal passes through the FET 4a,
The signal is input to the phase shift circuit 5a. The high-frequency signal whose phase has been changed by the phase shift circuit 5a passes through the FET 4c,
e, 4f. FET4e, 4g are ON, FE
When T4f and 4h are OFF, the high frequency signal is
4e and input to the phase shift circuit 5c. Phase shift circuit 5
The high-frequency signal whose phase has changed at c passes through the FET 4g and is output from the input / output terminal 2b.

On the other hand, when the FETs 4a and 4c are OFF,
4b, 4d ON, FET4e, 4g ON, FET4
When f and 4h are OFF, the high frequency signal is
It passes through the phase shift circuit 5b instead of a. Here, by setting the passing phases of the phase shift circuit 5a and the phase shifting circuit 5b to different values, it is possible to switch the passing phase of the high-frequency signal input from the input / output terminal 2a and output from the input / output terminal 2b.

[0005] FET4e, 4g are OFF, FET4f,
When 4h is ON, the passing phase can be similarly changed.

[0006]

The conventional phase shifter is constructed as described above, and includes FETs 4a, 4b, 4c and 4d.
If the matching of the semiconductor elements is not sufficiently achieved, there is a problem that resonance occurs between these semiconductor elements and the band becomes narrow.

Further, if the phase shift circuits 5a and 5b or the phase shift circuits 5c and 5d are brought close to each other for miniaturization, there is a problem that the phase shift circuits 5a and 5c are connected to each other and the phase shift amount error increases. Was.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems of the prior art, and can reduce the resonance between semiconductor elements and operate in a wide band with a small phase shift error. The purpose is to obtain a phaser.

[0009]

A phase shifter according to the present invention is characterized in that the high-frequency signal passing path means for guiding a high-frequency signal input to a first input / output terminal to a second input / output terminal has the first phase shifter. A first semiconductor element connected to the conductor of the input / output terminal, a first phase shift circuit connected to the first semiconductor element, the first phase shift circuit, and the second input / output terminal First high-frequency signal passing path means for sequentially leading to the conductor of the second input / output terminal via a second semiconductor element provided between the first input / output terminal and the second semiconductor element provided between the first input / output terminal A third semiconductor element connected to the conductor part, a second phase shift circuit connected to the third semiconductor element, the second phase shift circuit and the conductor part of the second input / output terminal, A second high-frequency circuit that leads to the conductor of the second input / output terminal through the fourth semiconductor element provided between Which has a signal passing path means, characterized in phase shifting means for varying the passing phase of the high-frequency signal to the respectively provided on said first and second phase shift circuit.

Further, as a high-frequency signal passing path means for guiding a high-frequency signal input to the first input / output terminal to the second input / output terminal, a first high-frequency signal connected to the conductor of the first input / output terminal is provided. A semiconductor element; a first phase shift circuit connected to the first semiconductor element; and a second phase shift circuit provided between the first phase shift circuit and the conductor of the second input / output terminal. A first high-frequency signal passage route means for sequentially leading to the conductor of the second input / output terminal via the semiconductor element, a third semiconductor element connected to the conductor of the first input / output terminal, This third
A second phase shift circuit connected to the semiconductor element of
A second high-frequency signal passing to the conductor of the second input / output terminal through the fourth semiconductor element provided between the phase shift circuit of the second and the conductor of the second input / output terminal in sequence. And a phase shifting means for changing a passing phase of a high-frequency signal in the conductor of the second input / output terminal.

Further, as a high-frequency signal passing path means for guiding a high-frequency signal input to the first input / output terminal to the second input / output terminal, the first input / output terminal is connected to the conductor of the first input / output terminal. A semiconductor element; a first phase shift circuit connected to the first semiconductor element; and a second phase shift circuit provided between the first phase shift circuit and the conductor of the second input / output terminal. A first high-frequency signal passage route means for sequentially leading to the conductor of the second input / output terminal via the semiconductor element, a third semiconductor element connected to the conductor of the first input / output terminal, This third
A second phase shift circuit connected to the semiconductor element of
A second high-frequency signal passing to the conductor of the second input / output terminal through the fourth semiconductor element provided between the phase shift circuit of the second and the conductor of the second input / output terminal in sequence. Path means for changing the passing phase of the high-frequency signal in the first and second phase shift circuits, and the passage of the high-frequency signal to the conductor of the second input / output terminal. A phase shift means for changing the phase is provided.

Further, the phase shift means provided in the conductor portion of the second input / output terminal is arranged in a region surrounded by the first and second high-frequency signal passage path means. It is.

Further, the first and second phase shift circuits are characterized by using microstrip lines or circuit elements such as inductors and capacitors.

Further, the phase shift means provided in the first and second phase shift circuits is characterized in that a semiconductor element and a strip conductor are connected in parallel.

Further, the first and second high-frequency signal passage means and the phase shift means have a monolithic structure formed on a semiconductor substrate.

Further, the phase shift means provided in the conductor portion of the second input / output terminal includes a strip conductor, a semiconductor element, and a through hole for connecting the strip conductor to the semiconductor substrate via the semiconductor element. Wherein the strip conductor is turned into a short stub / open stub by turning on / off the semiconductor element.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a configuration diagram showing a phase shifter according to Embodiment 1 of the present invention. In the figure, 1 is a dielectric substrate, 2a and 2b are input / output terminals, 3
a, 3b are matching stubs, 4a to 4f are FETs as semiconductor elements with strip conductors connected in parallel, 5a1, 5
Reference numeral 5a, which is a generic name of a2, is a first phase shift circuit. A phase shifter 6a for changing the passing phase of the high-frequency signal is provided in the first phase shift circuit 5a, that is, between the phase shift circuits 5a1 and 5a2. I have. Similarly, 5b, which collectively refers to 5b1 and 5b2, is the second
A phase shifter 6b for changing the passing phase of the high-frequency signal is provided in the second phase shift circuit 5b, that is, between the phase shift circuits 5b1 and 5b2. The strip conductor 7a is constituted by an FET 4e connected in parallel, and the phase shifter 6b is constituted by an FET 4f connected to the strip conductor 7b in parallel.

Next, the operation will be described. The high-frequency signal input to the input / output terminal 2a on the dielectric substrate 1 is supplied to the matching stub 3a
, And is input to the FETs 4a and 4c. FETs 4a and 4b are ON, FETs 4c and 4d
Is OFF, the high-frequency signal passes through the FET 4a and does not pass through the FET 4c. The high-frequency signal that has passed through the FET 4a is input to the phase shift circuit 5a1. Phase shift circuit 5
The high-frequency signal whose phase has changed after passing through a1 is transmitted to the phase shifter 6
is input to a.

The phase shifter 6a comprises an FET 4e and a strip conductor 7a, and turns on / off the FET 4e.
Thus, the strip conductor 7a is set so as to change the passing phase, and operates as a phase shifter. The high-frequency signal whose phase has been changed by the phase shifter 6a is transmitted to a phase circuit 5a2.
Is input to The high-frequency signal whose phase has changed after passing through the phase circuit 5a2 passes through the FET 4b in the ON state, but does not pass through the FET 4d in the OFF state.
Output from the input / output terminal 2b.

On the other hand, when the FETs 4a and 4b are OFF,
When 4c and 4d are ON, the high frequency signal input to the input / output terminal 2a on the dielectric substrate 1 is impedance-converted by the matching stub 3a and input to the FETs 4a and 4c. The high-frequency signal passes through the FET 4c and does not pass through the FET 4a. The high-frequency signal that has passed through the FET 4c is input to the phase shift circuit 5b1. The high-frequency signal whose phase has changed after passing through the phase shift circuit 5b1 is input to the phase shifter 6b.

The phase shifter 6b comprises an FET 4f and a strip conductor 7b, and turns the FET 4f ON / OFF.
By doing so, the strip conductor 7b is set to change the passing phase, and operates as a phase shifter. The high-frequency signal whose phase has been changed by the phase shifter 6b is supplied to a phase circuit 5b2.
Is input to The high-frequency signal whose phase has changed after passing through the phase circuit 5b2 passes through the FET 4d in the ON state, but does not pass through the FET 4b in the OFF state.
Output from the input / output terminal 2b.

That is, in the circuit shown in FIG. 1, high-frequency signal passing path means for guiding a high-frequency signal input to the first input / output terminal 2a to the second input / output terminal 2b serves as a high-frequency signal passing path means of the first input / output terminal 2a. The FET 4a connected to the conductor portion, the phase shift circuit 5a connected to the FET 4a, and the FET 4b provided between the phase shift circuit 5a and the conductor portion of the second input / output terminal 2b are sequentially interposed. A first high-frequency signal passage means for leading to the conductor of the second input / output terminal 2b, an FET 4c connected to the conductor of the first input / output terminal 2a, and a phase shift circuit 5b connected to the FET 4c. A second high-frequency signal passing path means for leading to the conductor of the second input / output terminal 2b sequentially through the FET 4d provided between the phase shift circuit 5b and the conductor of the second input / output terminal 2b. And a phase shift circuit 5 Are respectively the phase shifter 6a and 6b for changing the passing phase of the high-frequency signal in 5b with.

Here, ON / OFF of the FETs 4a and 4b
OFF is linked so as to be in the same state, ON / OFF of FET4c and FET4d is linked so as to be in the same state, and ON / OFF of FET4a and FET4c are linked so as to be opposite. By setting the sum of the phase amount and the phase shift amount of the phase shift circuit 5b1 and the sum of the phase shift amount of the phase shift circuit 5a2 and the phase shift amount of the phase shift circuit 5b2 to be different values, a phase shifter can be obtained. Operate. Also, FET
It operates as a phase shifter whose passing phase can be changed by ON / OFF of the FET 4e and the FET 4f. Therefore, this circuit operates as a 2-bit phase shifter.

Therefore, according to the first embodiment,
Phase shift circuits 5a and 5b of a phase shifter having the above-described first high-frequency signal passage path means and second high-frequency signal passage path means
In order to increase the loss due to the phase shifter in the phase shift circuit without increasing the total loss of these phase shifters, since the phase shifters 6a and 6b
When the reflection occurs at a or 4b, 4c or 4d, the resonance between these semiconductor elements is weakened, and it is possible to operate over a wide band.

In this circuit, matching between the FET 4a and the phase shift circuit 5a1 and the FET 4 and the phase shift circuit 5a2
Is poor, and reflection occurs, the signal is attenuated when passing through the phase shifter 6a, so that the phase shift amount error due to the reflected wave is reduced as compared with the case without the phase shifter 6a. Can be smaller.

Similarly, when the matching between the FET 4c and the phase shift circuit 5b1 and the matching between the FET 4d and the phase shift circuit 5b2 are poor, the phase shift amount error due to the reflected wave is reduced by the phase shifter 6.
It can be made smaller than when there is no b.

In the configuration shown in FIG. 1, the phase shifters 6a and 6b are provided between the phase shift circuits 5a1 and 5a2 and between the phase shift circuits 5b1 and 5b2, respectively. Compared with a configuration in which three phase shifters are connected in series between the output terminals 2b, the type and number of circuits through which the high-frequency signal passes do not change, so that the passage loss does not increase.

In the first embodiment, the phase shift circuits 5a, 5b
Although an example using a microstrip line constituted by a strip conductor has been described above, the same effect can be obtained even if this is constituted using a circuit element such as an inductor or a capacitor.

In the first embodiment, the phase shifters 4e,
As 4f, an example using a configuration in which an FET and a strip conductor are connected in parallel is described, but the same effect can be obtained by using a phase shifter having another configuration.

The semiconductor substrate is used as the dielectric substrate 1, and the FE constituting the above-described high-frequency signal passing path means is used.
Even if a monolithic structure in which T and the phase shift circuit and the phase shifter provided in the phase shift circuit are formed on the same substrate, the same effect can be obtained, and the phase shifter shown in FIG. 1 can be easily formed. .

In the first embodiment, the phase shifters 6a,
Although the case where a 1-bit phase shifter is used as 6b has been described, the same effect can be obtained by using the phase shifters 6a and 6b as multi-bit phase shifters.

Embodiment 2 FIG. Next, FIG.
FIG. 2 is a configuration diagram showing a phase shifter according to the first embodiment. 2, the same parts as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted. As a new code, 6c is a phase shifter provided on the conductor portion of the second input / output terminal 2b to change the passing phase of the high-frequency signal, and the phase shifter 6c includes the FET 4a and the phase shift circuit as described above. The strip conductors 7c and 7d are arranged in a region surrounded by a first high-frequency signal passing path means composed of 5a and FET 4b and a second high-frequency signal passing path means composed of FET 4c, phase shift circuit 5b and FET 4d. , FET 4g and strip conductor 7
d has a through hole 8 connecting the dielectric substrate 1 to the dielectric substrate 1 via the FET 4g, and the FET 4g is turned ON / OFF to make the strip conductor 7d a short stub / open stub and pass a high-frequency signal passing through the strip conductor 7c. Has been made to change.

Next, the operation will be described. The high-frequency signal input to the input / output terminal 2a on the dielectric substrate 1 is supplied to the matching stub 3a
, And is input to the FETs 4a and 4c. FETs 4a and 4b are ON, FETs 4c and 4d
Is OFF, the high-frequency signal passes through the FET 4a,
The FET 4c does not pass. The high-frequency signal that has passed through the FET 4a is input to the phase shift circuit 5a. The high-frequency signal whose phase has changed after passing through the phase shift circuit 5a has an ON state F
Since the signal passes through the ET 4b but does not pass through the FET 4d that is in the OFF state, the signal is input to the strip conductor 7c.

The strip conductor 7c is connected to the strip conductor 7c.
and a phase shifter 6c composed of an FET 4g and a through hole 8 is connected. When the FET 4g is turned ON / OFF, the strip conductor 7d becomes a short stub / open stub, and a high-frequency signal passing through the strip conductor 7c is passed. It operates as a phase shifter that changes the phase.
The passing phase of the high-frequency signal input to the strip conductor 7c is changed by the phase shifter 6, and is output from the input / output terminal 2b.

On the other hand, when the FETs 4a and 4b are OFF,
When 4c and 4d are ON, the high-frequency signal input to the input / output terminal 2a on the dielectric substrate 1 is impedance-converted by the matching stub 3a and input to the FETs 4a and 4c. The high-frequency signal passes through the FET 4c and does not pass through the FET 4a. The high-frequency signal that has passed through the FET 4c is input to the phase shift circuit 5b. The high-frequency signal whose phase has changed after passing through the phase shift circuit 5b passes through the FET 4d in the ON state, but is not passed through the FET 4b in the OFF state, so that it is input to the strip conductor 7c.

A phase shifter 6c composed of a strip conductor 7d, an FET 4g, and a through hole 8 is connected to the strip conductor 7c. By turning on / off the FET 4g, the strip conductor 7d becomes a short stub / open stub. Operates as a phase shifter for changing the passing phase of the high-frequency signal passing through the strip conductor 7c. The passing phase of the high-frequency signal input to the strip conductor 7c is changed by the phase shifter 6c and output from the input / output terminal 2b.

Here, the ON / OFF state of the FETs 4a and 4e
OFF is linked so as to be in the same state, ON / OFF of FET 4b and FET 4f is linked so as to be in the same state, and FET 4a and FET 4b are linked so that ON / OFF is opposite. The phase shifter operates as a phase shifter by setting the phase shift amount and the phase shift amount of the phase shift circuit 5b to different values. Also, FET4e is turned ON /
When the strip conductor 7b is turned off, the strip conductor 7b becomes a short stub / open stub, and operates as a phase shifter that changes the passing phase of a high-frequency signal passing through the strip conductor 7a. Therefore, this circuit operates as a 2-bit phase shifter.

In this circuit, when the strip conductors constituting the phase shift circuits 5a and 5b are bent in order to reduce the size of the circuit, the phase shift circuits 5a and 5b come close to each other and coupling occurs. Therefore, in the case of the second embodiment, two phase shifters are arranged by disposing a phase shifter 6c and a strip conductor 7c between the phase shift circuits 5a and 5b. The phase shift circuit 5a and the phase shift circuit 5 hardly increase the area occupied by the phase shifter.
b can be weakened and the phase shift amount error can be reduced.

Further, by arranging the phase shifter 6 in a region surrounded by the FETs 4a, 4b, 4c and 4d and the phase shift circuits 5a and 5b, the size can be reduced.

In the second embodiment, 1 is used as the phase shifter 6c.
Although the case where the bit phase shifter is used has been described, the phase shifter 6
The same effect can be obtained even if c is a multi-bit phase shifter.

Embodiment 3 Next, FIG.
FIG. 2 is a configuration diagram showing a phase shifter according to the first embodiment. The phase shifter according to the third embodiment shown in FIG. 3 combines the first and second embodiments shown in FIGS. 1 and 2 so as to operate as a 3-bit phase shifter. Embodiments 1 and 2 shown in FIG.
The same parts as those in FIG.

In this circuit, when the matching between the FET 4a and the phase shift circuit 5a1 and the matching between the FET 4b and the phase shift circuit 5a2 are poor and reflection occurs, the signal is attenuated when passing through the phase shifter 6a. Therefore, the phase shift amount error due to the influence of the reflected wave can be reduced as compared with the case where the phase shifter 6a is not provided.

Similarly, when the matching between the FET 4c and the phase shift circuit 5b1 and the matching between the FET 4d and the phase shift circuit 5b2 are poor, the phase shift amount error due to the influence of the reflected wave is eliminated.
It can be made smaller than when there is no b.

In this circuit, when the strip conductors constituting the phase shift circuits 5a (5a1 and 5a2) and the phase shift circuits 5b (5b1 and 5b2) are bent to reduce the size of the circuit, the phase shift circuit 5a And the phase shift circuit 5b approaches and the coupling occurs, and the phase shift amount error increases. In the case of the third embodiment, however, the phase shifter 6c and the strip are disposed between the phase shift circuit 5a and the phase shift circuit 5b. By arranging the conductor 7d, the coupling between the phase shift circuits 5a and 5b is weakened,
Phase shift error can be reduced.

Further, by arranging the phase shifter 6c in a region surrounded by the FETs 4a, 4b, 4c and 4d and the phase shift circuits 5a and 5b, the size can be reduced.

As described above, a small multi-bit phase shifter of 3 bits or more with a small phase shift error can be obtained.

In the third embodiment, the phase shifters 6a, 6b,
Although the case where a 1-bit phase shifter is used as 6c has been described, the same effect can be obtained even if the phase shifters 6a, 6b and 6c are used as multi-bit phase shifters.

[0048]

As described above, according to the present invention, the first
In order to dispose each phase shifter in each phase shifter of the phase shifter having the high-frequency signal passage path means and the second high-frequency signal passage path means, the total loss of these three phase shifters is Without increasing, the loss due to the phase shifter in each phase shift circuit increases, so the resonance between the semiconductor elements weakens,
It can operate over a wide band.

Further, since the phase shifter is arranged between the two phase shift circuits, the area occupied by the two phase shifters hardly increases, and the coupling between the two phase shift circuits becomes weak.
Phase shift error can be reduced.

Further, since each phase shifter is disposed in each phase shifter of the phase shifter, the phase shifter in each phase shifter is increased without increasing the total loss of the three phase shifters. Because the loss due to the phaser increases, the resonance between the semiconductor elements weakens,
Since the phase shifter can be operated in a wide band and the phase shifter is arranged between the two phase shift circuits, the area occupied by the two phase shifters is hardly increased, so that the coupling of the two phase shift circuits can be performed. Therefore, the phase shift amount error can be reduced and a small multi-bit phase shifter can be obtained.

Further, the phase shifter provided in the conductor portion of the second input / output terminal is arranged in a region surrounded by the first and second high-frequency signal passage paths, thereby reducing the size of the phase shifter. Can be achieved.

Further, the first and second phase shift circuits can be easily formed by using microstrip lines or circuit elements such as inductors and capacitors.

Further, the phase shift means provided in the first and second phase shift circuits can be easily configured by connecting the semiconductor element and the strip conductor in parallel.

In addition, the first and second high-frequency signal passage means and the phase shift means have a monolithic structure formed on a semiconductor substrate, thereby facilitating their manufacture.

Further, the phase shift means provided in the conductor portion of the second input / output terminal may include a strip conductor, a semiconductor element,
A through hole for connecting the strip conductor to the semiconductor substrate via the semiconductor element; turning the semiconductor element ON / OFF to make the strip conductor a short stub / open stub; The passing phase can be easily changed.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a phase shifter according to Embodiment 1 of the present invention.

FIG. 2 is a configuration diagram showing a phase shifter according to Embodiment 2 of the present invention.

FIG. 3 is a configuration diagram showing a phase shifter according to Embodiment 3 of the present invention.

FIG. 4 is a circuit diagram showing a conventional phase shifter.

FIG. 5 is a configuration diagram showing a conventional phase shifter.

[Explanation of symbols]

1 dielectric substrate, 2a, 2b input / output terminals, 3a, 3b
Matching stub, 4a-4f FET, 5a, 5a1, 5
a2, 5b, 5b1, 5b2 phase shift circuits, 6a, 6b,
6c phase shifter, 7a-7d strip conductor, 8 through holes.

Claims (8)

[Claims] A first input / output terminal connected to a conductor portion of the first input / output terminal as a high-frequency signal passing path means for guiding a high-frequency signal input to the first input / output terminal to the second input / output terminal; A semiconductor element; a first phase shift circuit connected to the first semiconductor element; and a second phase shift circuit provided between the first phase shift circuit and the conductor of the second input / output terminal. A first high-frequency signal passage route means for sequentially leading to the conductor of the second input / output terminal via the semiconductor element, a third semiconductor element connected to the conductor of the first input / output terminal, A second phase shift circuit connected to the third semiconductor element and a fourth semiconductor element provided between the second phase shift circuit and the conductor of the second input / output terminal. A second high-frequency signal passage route means for sequentially leading to the conductor portion of the second input / output terminal via the second input / output terminal; A phase shifter, wherein phase shift means for changing a passing phase of a high-frequency signal are provided in each of the first and second phase shift circuits. 2. A high-frequency signal passing path means for guiding a high-frequency signal input to a first input / output terminal to a second input / output terminal, the first input / output terminal being connected to a conductor of the first input / output terminal. A semiconductor element; a first phase shift circuit connected to the first semiconductor element; and a second phase shift circuit provided between the first phase shift circuit and the conductor of the second input / output terminal. A first high-frequency signal passage route means for sequentially leading to the conductor of the second input / output terminal via the semiconductor element, a third semiconductor element connected to the conductor of the first input / output terminal, A second phase shift circuit connected to the third semiconductor element and a fourth semiconductor element provided between the second phase shift circuit and the conductor of the second input / output terminal. A second high-frequency signal passage route means for sequentially leading to the conductor portion of the second input / output terminal via the second input / output terminal; A phase shifter, wherein a phase shift means for changing a passing phase of a high-frequency signal is provided in a conductor portion of the second input / output terminal. 3. A high-frequency signal passing path means for guiding a high-frequency signal input to a first input / output terminal to a second input / output terminal, the first input / output terminal being connected to a conductor of the first input / output terminal. A semiconductor element; a first phase shift circuit connected to the first semiconductor element; and a second phase shift circuit provided between the first phase shift circuit and the conductor of the second input / output terminal. A first high-frequency signal passage route means for sequentially leading to the conductor of the second input / output terminal via the semiconductor element, a third semiconductor element connected to the conductor of the first input / output terminal, A second phase shift circuit connected to the third semiconductor element and a fourth semiconductor element provided between the second phase shift circuit and the conductor of the second input / output terminal. A second high-frequency signal passage route means for sequentially leading to the conductor portion of the second input / output terminal via the second input / output terminal; Phase shifting means for changing the passing phase of a high-frequency signal in each of the first and second phase shifting circuits, and phase shifting means for changing the passing phase of the high-frequency signal in the conductor of the second input / output terminal. A phase shifter comprising: 4. The phase shifter according to claim 2, wherein the phase shift means provided on the conductor of the second input / output terminal is surrounded by the first and second high-frequency signal passage means. A phase shifter, wherein the phase shifter is arranged in a region where the phase shifter is located. 5. The phase shifter according to claim 1, wherein the first and second phase shift circuits are configured using microstrip lines or circuit elements such as inductors and capacitors. A phase shifter characterized by the above. 6. A phase shifter according to claim 1, wherein said phase shift means provided in said first and second phase shift circuits connects a semiconductor element and a strip conductor in parallel. A phase shifter characterized by comprising: 7. The phase shifter according to claim 1, wherein said first and second high-frequency signal passing path means and said phase shift means have a monolithic structure formed on a semiconductor substrate. A phase shifter characterized in that: 8. The phase shifter according to claim 7, wherein the phase shift means provided on the conductor portion of the second input / output terminal includes: a strip conductor, a semiconductor element, and the strip conductor via the semiconductor element. And a through hole connected to the semiconductor substrate, wherein the strip conductor is turned into a short stub / open stub by turning on / off the semiconductor element.