JPH11330682A - Method and apparatus for forming salient pole and forming component of the salient pole - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a salient pole, without restriction on providing common electrodes for forming the salient pole and without the need for a flux at the forming of the salient pole and an electrode forming component. SOLUTION: An IC to be bonded and solder balls are exposed to a mixed gas of an HF gas from an HF gas supply unit 24 and a steam from a steam generator 26 at a fluoriding units 12 and 14, and is fluorided on the surface and then disposed at a bonding unit 16. Thereafter, an Ar gas atmosphere is provided in a chamber 32, a connecting conducting unit and the ball are pressurized by a cylinder 40, heated to melting points or lower of the both by a heater 44, and bonded.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a protruding electrode, and an electrode forming part. The present invention relates to a method and an apparatus for forming a protruding electrode having no restrictions such as provision thereof, and an electrode forming component.

[0002]

2. Description of the Related Art When mounting an electric component on an object, there is a case where a projection is formed on a connection conducting portion of the electric component, and the electric component and the object are connected via the projection.

As an example of the above, a case where an electric component is an integrated circuit and an object is a printed circuit board will be described.

FIG. 13 is an explanatory sectional view showing the structure of an integrated circuit. As shown in FIG. 1, in the integrated circuit 1, a gold wire 3 is drawn out from an electrode 2A of a chip 2, and the tip of the gold wire 3 is connected to a land 4 provided on the bottom surface of the integrated circuit 1, Conduction between the chip 2 and the outside can be achieved. However, since the periphery of such a land 4 is surrounded by the resist 5, it is not possible to directly connect the land 4 to the printed circuit board to be connected. The solder ball 6 serving as the conductive member is connected, and the solder ball 6 is projected (via the solder ball 6).
The connection with the printed circuit board side is made.

[0005] As a second example of forming a projection on a connecting conductive portion of an electric component, there is a method of forming a bump on a chip by TAB manufacturing technology. The bumps are provided to prevent the inner leads from contacting the periphery of the chip when connecting the inner leads to the chip, and to connect only the electrodes of the chip. Such bumps are formed by forming a barrier metal (multilayer metal film) on the chip electrode and performing a plating process thereon, or by a wire bump method.

[0006]

However, in the first example in which a projection is formed on the connecting conductive portion of the electric component, the solder ball 6 is melted in order to join the solder ball 6 to the land 4. Was needed. For this reason, a flux has to be used, and a washing step is required to remove the flux after bonding.

Further, in the second example in which projections are formed on the connection conducting portions of the electric parts, a large number of masks are required for forming bumps by a plating process, and a common electrode is required since electrolytic plating is used. There were restrictions on routing. Further, due to the properties of the alloy, there is also a problem that a heterogeneous metal having adhesion and barrier properties must be formed in multiple layers.

The present invention focuses on the above-mentioned conventional problems, and does not require a flux at the time of forming the protruding electrode, and a method of forming a protruding electrode having no restrictions such as providing a common electrode for forming the protruding electrode. It is an object to provide a forming apparatus and an electrode forming component.

[0009]

According to a first aspect of the present invention, there is provided a method of forming a projecting electrode, comprising: bonding a conductive member to a surface of a connecting conductive portion provided on an electric component. A method of forming a protruding electrode, wherein at least one surface of the connection conductive portion and the conductive member is halogenated, and the surface is contacted so as to be located at an interface between the connection conductive portion and the conductive member. Then, a projection electrode is formed on the electric component by solid bonding.

According to the first aspect of the present invention, at least one of the bonding surfaces is a halogenated surface, so that the bonding interface is solid-bonded with halogens as intermediates. Even without melting, the conductive member can be joined to the connection conducting portion.
Here, since the conductive member is not melted, it is not necessary to use the flux, and the step of cleaning the flux can be omitted. In addition, since bonding can be performed without melting the bonding interface, there is no need to apply a high temperature to the bonding interface and its surroundings, so that a film that deteriorates the electrical contact characteristics is formed on the surface of the bump electrode. Undesired deterioration of the electrodes and electric components can be avoided.

According to a second aspect of the present invention, there is provided a method of forming a projecting electrode.
The conductive member is a metal particle made of a metal material for forming an electric contact.

According to the second aspect of the present invention, since the conductive member is a metal particle made of a metal material for forming an electric contact, the projecting electrode of the electric component can be used as a terminal of another electric member. Can be easily joined to form an electric contact. As such metal particles, it is possible to use particles having a metal or alloy which does not interfere with the electrical contact properties, such as solder having various alloy compositions (lead-containing solder and lead-free solder), gold, and gold tin. In particular, solder balls are the most common. In this case, the electric component to which the solder ball is bonded is mounted on a printed circuit board or the like, and the electric component and the printed circuit board or the like can be bonded by passing through a normal reflow process.

According to a third aspect of the present invention, there is provided a method of forming a projecting electrode.
The connection conducting portions are arranged in a grid on the surface of the electric component.

According to the third aspect of the invention, since the heat applied to the electric component is equal to or lower than the melting point of the conductive member, thermal damage is reduced. For this reason, the heat resistance condition of the electric component itself can be relaxed, and for example, the selection of the package member can be expanded.

According to a fourth aspect of the present invention, there is provided a method for forming a bump electrode,
The connection between the connection conducting portion and the conductive member is performed by heating the interface.

According to the method of forming a bump electrode according to the fourth aspect, the reaction at the time of bonding can be promoted, and bonding can be performed in a short time, and bonding strength can be increased.

According to a fifth aspect of the present invention, there is provided a method of forming a bump electrode,
The interface is substantially heated after a point in time when the connection conductive portion and the conductive member are brought into contact with each other.

According to the present invention, since the halogenated surface is not substantially heated before coming into contact with the partner to be joined, it is possible to suppress the deterioration of the halogenated surface. It is possible to reduce the occurrence of poor bonding or the like due to impaired bonding performance of the converted surface. Here, the term “substantially heating” means that heating is performed to such an extent that the halogenated surface affects the bonding performance or the bonding state (particularly, the electrical bonding state and the mechanical bonding state).

According to a sixth aspect of the present invention, there is provided a method of forming a bump electrode,
It is characterized in that heat conduction to the surface is suppressed so that the halogenated surface is not substantially heated before the connection conductive portion is brought into contact with the conductive member.

According to the present invention, heat transfer is suppressed so that the halogenated surface is not substantially heated before the contact surfaces are brought into contact with each other, so that deterioration of the halogenated surface can be suppressed. Therefore, the occurrence of poor bonding and the like can be reduced. Here, as a case of suppressing the heat transfer, a specific method such as disposing a heat insulating member that blocks at least one of heat radiation and heat conduction from the heat source to the halogenated surface is exemplified.

According to a seventh aspect of the present invention, there is provided a method of forming a bump electrode,
The bonding between the connection conducting portion and the conductive member is performed by applying pressure to increase the contact pressure at the interface.

According to the method of forming a projecting electrode according to the seventh aspect, by increasing the contact pressure, the adhesion between the connecting conductive portion and the conductive member is improved, and the bonding strength can be further increased. In particular, in the bonding process using solid bonding as in the present application, a stable bonding state can be obtained by applying pressure.

[0023] The method of forming a projecting electrode according to claim 8 is as follows.
The bonding between the connection conducting portion and the conductive member is performed in an inert gas atmosphere.

According to the projection electrode forming method of the present invention, when the joining is performed in an inert gas, the oxidation of the member to be joined can be prevented, and the halogenated surface state can be maintained. Strength can be improved.

According to a ninth aspect of the present invention, there is provided a method for forming a bump electrode,
The method is characterized in that the surface is kept in an inert gas atmosphere after the surface is halogenated until the connection conductive portion and the conductive member come into contact with each other.

According to the ninth aspect of the present invention, the surface of the halogenated surface is maintained in an atmosphere of an inert gas until the surface is halogenated and then brought into contact with the surface. The joining state can be improved. In this case, the bonding state can be further improved by holding the conductive member in the inert gas until the bonding is completed after the conductive member is brought into contact with the connecting conductive portion as described in claim 8. Can be improved.

[0027] A method of forming a bump electrode according to a tenth aspect is characterized in that the method includes a step of flattening a surface of the conductive member to be joined to the connection conductive portion.

According to the present invention, by flattening the surface of the conductive member to be joined, the contact area with the connecting conductive portion during the joining process is increased, and the reaction at the joining interface is promoted. The bonding state can be improved and the bonding strength can be increased. In particular, since the outer skin such as an oxide film of the conductive member is generally destroyed or removed by the flattening process, the effect of preventing the outer skin from being halogenated is reduced, and the halogenating process is performed more efficiently and effectively. be able to.

[0029] In the method of forming a bump electrode according to the eleventh aspect, a plurality of the conductive members are arranged and held in accordance with an arrangement state of the arranged plurality of connection conducting portions. The surface of the conductive member is flattened, and the conductive member is joined to the connection conducting portion in the arrangement state.

According to the present invention, since the conductive members are arranged in advance in a form corresponding to the arrangement state of the connecting conductive portions, there is no need to rearrange the conductive members after the flattening process. The joining process can be easily performed without causing the movement of the joining surface. In addition, since the height of the surface of the conductive member can be made constant by flattening the plurality of conductive members together, variation in the bonding state can be suppressed, and occurrence of bonding failure can be prevented.

According to a twelfth aspect of the present invention, in the method of forming a bump electrode, the conductive member having the flattened surface is used.

According to the present invention, since the surface of the conductive member is planarized in advance, the contact area during the bonding process can be increased, and when the halogenation process is performed on the surface, the halogen is reduced. It is possible to improve the joining mode of the solid joining by the conversion treatment, and to increase the joining strength. In particular, a plurality of conductive members are collectively plastically deformed by a flat plate or the like and flattened, so that the height between the conductive members can be kept constant, and a variation in a bonding state, a bonding failure, and the like can be prevented. .

According to a thirteenth aspect of the present invention, in the method for forming a bump electrode, the flattened surface is halogenated and then joined to the connection conductive portion.

According to the present invention, since the conductive members are arranged in advance in a form corresponding to the arrangement state of the connection conducting portions, the halogenation treatment is performed as it is after the planarization treatment, and the bonding treatment is further performed. Therefore, it is not necessary to rearrange the conductive members, and the halogenated surface can be securely bonded. Therefore, the halogenating process and the bonding process can be easily performed.

Each of the above-mentioned inventions can be understood as a method of manufacturing an electric component having a protruding electrode.

According to a fourteenth aspect of the present invention, there is provided an apparatus for forming a protruding electrode, wherein a halogenated portion for halogenating at least one surface of a conductive portion for connection and a conductive member provided on an electric component is provided, and halogenated. The bonding surface is provided with a bonding surface for making the connection conductive portion and the conductive member adhere to each other with the surface as an interface.

According to the projection electrode forming apparatus of the present invention, it is possible to add halogen to at least one surface of the connection conductive portion or the conductive member. Then, the conductive portion for bonding and the conductive member are brought into close contact with each other using the surface halogenated by the bonding processing portion as an interface, so that the conductive member can be bonded to the conductive portion for connection without melting the conductive member. it can. Further, since the conductive member is not melted, it is not necessary to use a flux, and the step of cleaning the flux can be omitted.
In addition, since bonding can be performed without melting the bonding interface, there is no need to apply a high temperature to the bonding interface and its surroundings, so that a film that deteriorates the electrical contact characteristics is formed on the surface of the bump electrode. Undesired deterioration of the electrodes and electric components can be avoided.

According to a fifteenth aspect of the present invention, the conductive member is a metal particle made of a metal material for forming an electrical contact. The metal particles are preferably solder balls.

According to the projection electrode forming apparatus of the present invention, since the conductive member is a metal particle made of a metal material for forming an electric contact, the projection electrode of the electric component is connected to the terminal of another electric member. Can be easily joined to form an electric contact. As such metal particles, it is possible to use particles having a metal or alloy that does not hinder the electrical contact property, such as solder having various alloy compositions (lead-containing solder and lead-free solder), gold, and gold tin. However, solder balls are particularly common. In this case, the electric component to which the solder ball is bonded is mounted on a printed circuit board or the like, and the electric component and the printed circuit board or the like can be bonded by passing through a normal reflow process.

[0040] According to a sixteenth aspect of the present invention, in the apparatus for forming a protruding electrode, the connecting conductive portions are arranged in a grid pattern on the surface of the electric component.

According to the projection electrode forming apparatus of the present invention, since the heat applied to the electric component is lower than the melting point of the conductive member, thermal damage is reduced. For this reason, the heat resistance condition of the electric component itself can be relaxed, and for example, the selection of the package member can be expanded.

According to a seventeenth aspect of the present invention, in the projection electrode forming apparatus, the bonding part has a heating means capable of heating the interface to a temperature lower than the melting point of any of the connection conducting part and the conductive member. It is characterized by.

According to the projection electrode forming apparatus of the present invention, the reaction at the time of joining can be promoted, the joining can be performed in a short time, and the joining strength can be increased.

An apparatus for forming a protruding electrode according to claim 18, wherein the heating means substantially heats the interface after a point in time when the conductive portion for connection is brought into contact with the conductive member. I do. As a specific configuration in this case,
Before the connection conductive portion and the conductive member come into contact with each other, a heat insulating member is disposed between the heat source and at least one of the connection conductive portion and the conductive member, and the connection conductive portion and the conductive member are arranged in a heat-insulating member. There is a structure capable of moving or removing the heat insulating member after the point of contact. Further, there is a structure capable of starting the heat generation of the heating means after a point in time when the conductive portion for connection and the conductive member come into contact with each other.

In the projection electrode forming apparatus according to the nineteenth aspect, in the bonding portion, the halogenated surface is not substantially heated before the connecting conductive portion is brought into contact with the conductive member. In this way, a heat transfer suppressing means for suppressing heat transfer to the surface is provided. In this case, as the heat transfer suppressing means, there is a heat insulating member arranged on a heat path from a heat source to the connection conducting portion and / or the conductive member. The heat insulating member may reduce either heat radiation or heat conduction, or may reduce both.

According to a twentieth aspect of the present invention, there is provided an apparatus for forming a protruding electrode, wherein the bonding part has a pressing means for increasing the contact pressure at the interface.

According to the projection electrode forming apparatus of the present invention, by increasing the contact pressure, the adhesion between the connection conducting portion and the conductive member is improved, and the bonding strength can be further increased.

According to a twenty-first aspect of the present invention, the bonding processing section has an inert gas supply chamber in which an electric component and a conductive member are arranged and an inert gas is supplied. It is characterized by:

According to the projection electrode forming apparatus of the present invention, when bonding is performed in the inert gas supply chamber, oxidation of the connecting conductive portion and the conductive member can be prevented, and the bonding strength can be improved. it can.

According to the projection electrode forming apparatus of the present invention, the surface can be held in an atmosphere of an inert gas until the surface of the projection electrode is halogenated and then the conductive portion for connection is brought into contact with the conductive member. It is characterized by comprising.

According to the twenty-second aspect of the present invention, the surface of the halogenated surface is maintained in an atmosphere of an inert gas until the surface is halogenated and then brought into contact with the surface, whereby deterioration of the halogenated surface can be suppressed. The joining state can be improved. In this case, it is possible to further improve the bonding state by holding the substrate in an inert gas until the bonding is completed after the contact as described in claim 8.

According to a twenty-third aspect of the present invention, the projection electrode forming apparatus has a flattening means for flattening a surface of the conductive member to be joined to the connection conductive portion.

According to a twenty-fourth aspect of the present invention, there is provided an apparatus for forming a protruding electrode, comprising an array holding member for arraying and holding a plurality of conductive members in accordance with an array state of the arrayed plurality of connection conducting portions. Then, the surface of the conductive member is flattened while being held by the arrangement holding member, and thereafter, the conductive member is joined to the connection conducting portion while being held by the arrangement holding member.

According to the present invention, it is possible to perform the flattening process and the bonding process while holding the conductive member on the array holding member, so that it is not necessary to perform the rearrangement work of the conductive member. Also, it is not necessary to arrange the flattened surface portions, and the joining process can be easily performed.

The apparatus for forming a bump electrode according to claim 25, is configured such that after flattening the surface of the conductive member, the surface is halogenated and then joined to the connection conducting portion. It is characterized by.

According to the present invention, since the halogenation treatment is also performed on the alignment holding member, the treatment is further facilitated, and it is not necessary to align the halogenated surface portions.
The joining process can be easily performed.

According to a twenty-sixth aspect of the present invention, in the projection electrode forming apparatus, the halogen processing section is constituted by a halogen gas supply chamber, and the halogen gas supply chamber is provided with an inlet and an outlet for a conductive member. And a slope formed between the outlet and the outlet.

According to the projection electrode forming apparatus of the twenty-sixth aspect, the conductive member moves while rolling from the input port to the discharge port in the chamber filled with the halogen gas. The halogenation can be performed uniformly, the conductive member can be continuously charged, and the supply amount of the halogen gas can be reduced.

According to a twenty-seventh aspect of the present invention, in the projection electrode forming apparatus, the halogen processing unit includes a halogen gas supply chamber and a cover that can be put into the halogen gas supply chamber and can surround an electric component. Is provided with an exposure hole corresponding to the connection conducting portion, so that the connection conducting portion can contact the atmosphere of the halogen gas supply chamber.

According to the projection electrode forming apparatus of the twenty-seventh aspect, only the connecting conductive portion is exposed to the atmosphere of the halogen gas supply chamber, and the other parts of the electric component are not exposed to the atmosphere of the halogen gas supply chamber. . For this reason, it is possible to prevent discoloration or the like from occurring in portions other than the connection conducting portion in the electric component. In addition, since the exposure range is limited to the connection conductive portion, the supply amount of the halogen gas can be reduced.

According to a twenty-eighth aspect of the present invention, in the apparatus for forming a protruding electrode, the bonding processing part is provided in the conductive member storage part, and the connection conductive part provided above the conductive member storage part is provided in the conductive member storage part. It is characterized by comprising a pressable electric component pressing portion, providing a recess corresponding to the conductive portion for connection in the conductive member storage portion, and setting the depth of the recess so that the conductive member protrudes from the recess. And

According to the projection electrode forming apparatus of the twenty-eighth aspect, when the electric component pressing portion is lowered, the connecting conductive portion presses the conductive member. The pressing of the connection conducting portion against the conductive member is performed until the electric component pressing portion comes into contact with the conductive member storage portion, but at this time, the conductive member is uniformly deformed according to the depth of the recess, so that In addition, the height from the connection conducting portion to the top of the conductive member can be made uniform.

A projection electrode forming apparatus according to a twenty-ninth aspect is characterized in that the surface of the depression is made of an aluminum material.

According to the apparatus for forming a protruding electrode according to the twenty-ninth aspect, since the aluminum material is hard to be halogenated, the bonding strength between the conductive member and the connecting conductive portion is smaller than the bonding force between the conductive member and the inner wall of the depression. Since the bonding force is strong, the conductive member can be prevented from remaining in the depression.

According to a thirty-fifth aspect of the present invention, in the apparatus for forming a protruding electrode, a marking for positioning is provided on the surface of the electrical component having the connecting conductive part, and a marking detecting means is provided on the conductive member housing part side. The component pressing section is provided with moving means connected to the marking detecting means.

According to the projection electrode forming apparatus of the present invention, since the relative position between the electric component pressing portion and the conductive member housing portion is detected, the accuracy of the positioning of both is improved. Can be.

According to a thirty-first aspect of the present invention, there is provided an apparatus for forming a protruding electrode, wherein a single depression is provided in a central region of a conductive member storage part, and a conductive member is provided at a position of a connection conducting part corresponding to the periphery of the depression. It is characterized by providing a larger diameter escape hole.

According to the projection electrode forming apparatus of the thirty-first aspect, even if several conductive members are already joined to the connection conducting portion, the empty portion is surely free from interference with these conductive members. A new conductive member can be joined to the connection conducting part.

In the projection electrode forming apparatus according to the thirty-second aspect, the halogen-treated portion is constituted by a double tube comprising an inner tube and an outer tube, and the groove position of the inner tube is drawn in from the groove position of the outer tube. The inner tube is arranged stepwise, the diameter of the inner tube is made to correspond to the diameter of the connection conducting portion, and the inner tube can be supplied with a halogen gas.

According to the projection electrode forming apparatus of the present invention, even if several conductive members are already joined to the connection conducting portion, the empty portion is surely free from interference with these conductive members. A new conductive member can be joined to the connection conducting part. Further, since the halogen gas is introduced from the inner tube and discharged from the space between the outer tube and the inner tube, the halogen gas does not touch any portion other than the connection conducting portion to be halogenated. For this reason, it is possible to prevent a failure such as discoloration from occurring in other portions.

In a thirty-third embodiment of the present invention, the electrical component is a bare chip, and the conductive member to be brought into close contact with the connection conducting portion is for forming a bump on the bare chip.

According to the projection electrode forming apparatus of the present invention, since it is not necessary to provide a mask or a common electrode for forming bumps, it is possible to eliminate restrictions for wiring routing. Further, it is possible to eliminate the restriction of forming a heterogeneous metal in multiple layers.

According to a thirty-fourth aspect of the present invention, in the component for forming a protruding electrode, the connection between the conductive part for connection provided on the electric component and the conductive member is performed by connecting the conductive part having at least one surface halogenated to the conductive part for connection. With the close contact with
It is characterized in that the height of the conductive member from the connection conducting portion is uniform due to the pressure required for close contact.

According to the component for forming a protruding electrode according to the thirty-fourth aspect, since the height of the conductive member from the connection conducting portion is constant, when the component is mounted on a substrate or the like, the conductive member and There is no gap between the substrate and the like. Therefore, it is possible to prevent the occurrence of a connection failure between the conductive member and the substrate or the like even when the reflow process is performed.

[0075] According to a thirty-fifth aspect of the present invention, in the component for forming a protruding electrode, the connecting conductive portions are arranged in a grid on the surface of the electrical component.

According to the component for forming a protruding electrode according to the thirty-fifth aspect, since a portion having a different thickness does not exist in the region where the connecting conductive portion exists, the conductive member and the connecting conductive portion are closely adhered. It is possible to prevent the occurrence of warpage in the region where the connection conducting portion exists due to the pressure applied. Therefore, the height of the conductive member can be easily made uniform.

[0077]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method and an apparatus for forming a bump electrode according to the present invention and components for forming a bump electrode will be described in detail with reference to the drawings.

FIG. 1 is an explanatory diagram showing the configuration of a projection electrode forming apparatus according to the present embodiment.

This device forms a protruding electrode by bonding a solder ball to a connecting conductive portion of an IC. As shown in FIG. 1, a protruding electrode forming device 10 (hereinafter referred to as a forming device 10) is used. A first fluorination processing unit 12 and a second fluorination processing unit 14 which are halogenation processing units;
6. The first fluorinated portion 12 and the second fluorinated portion 14 are for adding fluorine (F) to the surface of the joining object, that is, the connecting conductive portion of the IC and the surface of the solder ball. Reaction chamber 1 serving as a halogen gas supply chamber for supplying hydrogen fluoride (HF) gas
Eight.

Then, pipes 20 and 22 are provided in the reaction chamber 18.
The HF gas supply unit 24 and the steam generation unit 26 are connected via a, so that a mixed gas of HF gas and water vapor is supplied. Further, a solder ball storage 28 is provided before the first fluorination processing unit 12, and a magazine loader 30 is provided before the second fluorination processing unit 14.

Then, solder balls can be continuously supplied from the ball storage 28 to the first fluorination processing section 12, and ICs can be continuously supplied from the magazine loader 30 to the second fluorination processing section 14. By the way, in the present apparatus 10, the first fluorination processing unit 12 and the second fluorination processing unit 14 are provided, and the fluorination processing is performed on the solder ball and the connecting conductive part of the IC, respectively. The fluoridation treatment may be performed on only one of them without being particular.

When the solder ball or the connecting conductive portion of the IC is exposed to a mixed gas of HF gas and water vapor, HF and H ₂ O
And on these surfaces,

[0083]

Embedded image

Then, the fluorine ion (F ⁻ ) reacts with the solder ball or the connecting conductive portion of the IC, thereby fluorinating the surface. By the way, since the conductive part for connection of the solder ball and the IC is made of metal, the surface is covered with a natural oxide film,
The oxygen and F of the oxide film ^- a surface substitution reaction occurs of fluorinated or fluorine and mixed surface with a composition of oxygen is formed.

The present apparatus 10 has a transporting means (not shown), and is capable of connecting fluorinated solder balls and ICs to the joining processing unit 1.
6 can be carried. The bonding section 16 includes a chamber 32 to which an argon gas supply section 34 is connected, and the inside of the chamber 32 can be filled with argon gas (inert gas).

In the chamber 32, a table 36 and a holding plate 38 are provided so as to be vertically overlapped.
An upper and lower cylinder 40 for pressurization is connected to the pressing plate 38. Here, bonding jigs 42U and 42D are provided on the table 36 and the holding plate 38, and by bringing these two into close contact, solder balls can be bonded to the IC. When the vertical cylinder 40 is operated in addition to the close contact operation, the interface is pressurized, so that the joining of the two is promoted. Further, a heater 44 as a heating means is provided below the chamber 32 to control the heating of the solder balls and the IC to a predetermined temperature so as to promote the joining of the two.

Further, a magazine unloader 46 is provided at the subsequent stage of the joining processing section 16, and the IC to which the solder balls are joined is provided.
Can be stored again.

Here, the joining jig 42U in the first fluorinating section 12, the second fluorinating section 14, and the joining section 16
42D shows a specific form.

FIG. 2 is a schematic diagram showing a specific form of the first fluorination processing section 12. As shown in FIG. The reaction chamber 18 is formed in a tubular shape as shown in FIG. When the first fluorinated portion 12 is formed as described above, the solder ball 48 is fluorinated while rolling from the inlet to the outlet of the tubular end portion, so that the surface of the solder ball 48 is uniformly fluorinated. In addition, the solder balls 48 can be continuously charged, and the supply amount of the HF gas can be further reduced. Although FIG. 1A shows a tubular reaction chamber 18, it may be a rectangular reaction chamber 18 as shown in FIG. 2B.

FIG. 3 is a schematic diagram showing a specific form of the second fluorination processing section 14. When the IC 50 is put into the reaction chamber 18 as shown in FIG. 1A, the cover 52 is attached so as to cover the mold 50 side of the IC 50. For this reason, since the IC 50 is exposed only on the side of the connection conducting portion 54, the supply amount of the HF gas used for the fluorination treatment can be reduced. Furthermore, it is possible to prevent the rear mold 51 from being discolored or the like due to contact with the HF gas.

Further, as shown in FIG. 2B, the IC 50 may be completely covered with the cover 52, and the connection conducting portion 54 may be exposed from the exposure hole 56 provided in the cover 52. If only the contact conducting portion 54 is exposed in the HF gas atmosphere, other portions of the IC 50 are H
Since F gas is not touched at all, it is possible to further reduce the amount of HF gas used and to prevent discoloration or the like.

FIG. 4 is a schematic diagram showing a specific form of the joining jigs 42U and 42D. As shown in FIG.
The 2U is provided with a vacuum suction means 58, which can hold the IC 50 by being brought into close contact with the back side (the mold 51 side) of the IC 50 transferred by a transfer means (not shown). Below the joining jig 42U, there is provided a joining jig 42D capable of holding a solder ball 48 to be joined. The joining jig 42D has a form in which a mask 60 is placed on a plane facing the joining jig 42U. The mask 60 has a plurality of through holes 62 so as to correspond to the positions of the connection conducting portions 54. Is formed. Therefore, the joining jig 42D has a form in which a large number of depressions are formed when viewed from above. By the way, the through hole 62
Is formed so that its inner diameter is larger than the diameter of the solder ball 48, and its depth is set such that when the solder ball 48 is inserted, the solder ball 48 protrudes from the opening of the through hole 62. When the solder ball 48 is joined to the connection conducting portion 54, the size of the solder ball 48 is
Is set to the size of just crushing.

When the joining jigs 42U and 42D are configured as described above, the solder balls 48 are uniformly deformed according to the depth of the through holes 62.
The height to the top of 8 can be made uniform. Here, if aluminum is used as the material of the mask 60, the aluminum material is hard to be fluorinated, so that the bonding force between the solder ball 48 and the connecting conductive portion 54 is determined by the bonding force between the solder ball 48 and the inner wall of the through hole 62. Since it is strong, it is possible to prevent the solder ball 48 from remaining in the depression. Also I
The shape of the mold 51 in C50 is the connecting conductive portion 54.
It is desirable that the thickness be constant within the range of (1). By making the thickness of the mold 51 constant, it is possible to prevent the IC 50 from warping during pressurization, so that the solder balls 48 can be securely joined to the connection conducting portions 54.

The alignment between the connection conducting portion 54 of the IC 50 and the solder ball 48 (and the through hole 62) may be performed with reference to the mark provided on the joining jig 42U. FIG. 5 is a configuration diagram showing a configuration for performing alignment of the connection jigs 42U and 42D. According to the drawing, dummy connecting conductive portions arranged diagonally in the IC 50 are used as marks 64. The connection jig 42
On the D side, there is provided a CCD 66 serving as a marking detecting means for detecting the mark 64.
The position information detected by 6 is sent to moving means (not shown) provided on the connecting jig 42U, and the mark 64 is moved by the operation of the moving means, thereby aligning the connecting conductive portion 54 with the solder ball 48. I'm trying to do it. Since the relative positions of the connection jigs 42U and 42D are detected in this manner, the accuracy of the alignment between the two can be improved.

By applying the forms of the second fluorinated processing section 14 and the bonding jigs 42U and 42D described above, the present invention can be applied to a so-called repair process of reattaching the solder ball 48 to the IC 50.

FIG. 6A is an explanatory view showing a state of the IC 50 in which the solder balls 48 are missing from the connection conducting portions 54. FIG. As shown in the drawing, after the solder ball 48 is joined to the connection conducting portion 54, there is a possibility that the solder ball 48 falls off from the connection conducting portion 54 due to some factor such as vibration or impact (hatched portion in the figure). FIG. 6B shows a single connection conducting portion 54 without interfering with the surrounding solder balls 48.
The form of the second fluorination processing unit 14 that only fluorinates only is shown. As shown in the figure, the second fluorination processing section 14 is configured by a double pipe of an inner pipe 68 and an outer pipe 70. And inner tube 6
The groove 8 is arranged stepwise so as to be drawn in from the groove of the outer tube 70, and the diameter of the inner tube 68 is made to correspond to the diameter of the connection conducting portion 54, so that HF gas can be supplied from the inner tube 68. I made it. By configuring the second fluorinated portion 14 in this manner, even if several solder balls 48 are joined to the connection conducting portion 54, the second fluorinated portion 14 is reliably repaired without interfering with these solder balls 48. The fluorinating treatment can be performed on the connection conducting portion 54 to be re-joined. In addition, the connecting conductive portion 5 to be fluorinated
Since the HF gas is not touched other than 4, the usage amount of the HF gas can be reduced.

FIG. 7A shows an aspect of the repair process, and FIG. 7B shows the joining jigs 42U and 42D used in the repair process.
Is shown. As shown in the figure, the hole mask 60 provided on the joining jig 42D side is provided with a single through hole 62 for holding the solder ball 48 at the center thereof, and around the through hole 62, that is, the hole mask 60 In the position facing the connection conducting portion 54 to which the solder ball 48 is joined, a relief hole 72 for avoiding interference with the solder ball 48 is provided.
Is provided. The joining jig 42U can be moved in a plane direction with respect to the joining jig 42D by a moving unit (not shown). For this reason, the position of the missing part of the solder ball 48 in the IC 50 is aligned with the position of the through hole 62,
When the connection conductive portion 54 and the solder ball 48 are combined, the solder ball 48 can be joined to the connection conductive portion 54. If two or more solder balls 48 are missing from the IC 50, the joining jig 42U
And the solder balls 48 may be bonded one by one. Thus, the escape hole 7 is formed in the hole mask 60.
2, the hole mask 60 and the connecting conductive portion 54 are brought into close contact with the IC 50 at the time of bonding, so that a local force can be prevented from being applied to the IC 50.
The biasing of the heating at 50 or the deformation of the IC 50 can be prevented.

As described above, the first fluorinated portion 12 and the second fluorinated portion
The bonding jig 4 in the fluorination processing unit 14 and the bonding processing unit 16
Although the specific forms and functions of the 2U and 42D have been described, the solder balls 48 can be joined to the connection conducting portions 54 by appropriately combining them.
A protruding electrode can be formed on the substrate.

The solder balls 48 are used as the protruding electrodes, because the IC 50 on which the protruding electrodes are formed is further mounted on a substrate or the like by a reflow process. If the IC 50 on which the protruding electrodes are formed is bonded to the substrate side by the above-mentioned method (fluorination treatment and bonding), the protruding electrodes do not need to be the solder balls 48, for example, on the surface of the glass on which the wiring pattern is laid For example, when a protruding electrode is formed, a gold ball may be used to improve the electrical characteristics, and the shape may be not only spherical but also various shapes such as a column, depending on the application. .

In the above-described embodiment, the ICs and the solder balls are used as the objects for forming the protruding electrodes. However, as another application example, the ICs and the solder balls may be used for forming bumps on a bare chip. That is, conventionally, formation of bumps on a bare chip requires a large amount of masks and common electrodes. However, if the present apparatus is applied, it is not necessary to route the pattern for forming the mask and the common electrode described above. Therefore, the protruding electrodes can be easily formed on the bare chip.

The mechanism of this joining is considered as follows. The atoms of the surface portion of the member to be bonded that are bonded to fluorine break the bond with fluorine when they come into contact with another member to be bonded, and bond with the atoms of another member to be bonded. Then, it is considered that the fluorine whose bond has been broken diffuses into the member to be bonded, which easily takes in the fluorine. Further, in the above-described embodiment, the case where the fluoridation treatment is performed using HF gas has been described. However, the fluoridation treatment may be performed by applying hydrofluoric acid or dipping in hydrofluoric acid.

In the above embodiment, the case where Ar gas is used as the inert gas has been described. However, the inert gas may be a rare gas such as helium or neon, or a nitrogen gas. Further, in the above embodiment, the case where the halogen is fluorine has been described. However, the halogen may be chlorine, iodine, bromine, or the like depending on the compatibility or surface state of the bonding partner.

Next, a more specific embodiment of the above embodiment will be described. In this embodiment, the first fluorination unit 1 described in the above embodiment is used.
2 is formed, and a fluoridation processing chamber 180 shown in FIG. 8 is provided in this fluorination treatment section. Further, a bonding processing unit corresponding to the bonding processing unit 16 described in the above embodiment is formed, and the bonding processing unit includes a bonding processing chamber 19 shown in FIGS. 10 and 11.
0 is provided. The second fluorination processing unit 14 in the above embodiment may or may not be provided.

In this embodiment, as shown in FIG. 8A, solder balls 4 which are metal particles for electrical contact are used in advance.
8 are accommodated one by one in the concave portions 80 a formed on the surface of the joining jig 80, and are held in a state of being arranged so as to correspond to the arrangement of the connection conducting portions 54 formed in the IC 50. , Into the fluoridation chamber 180. Here, the joining jig 80 has a concave portion 80a formed by cutting on the surface of the plate-shaped member, but is configured by attaching a mask member having a through-hole formed in the plate-shaped member as described above. Is also good. The material of the joining jig 80 is preferably stainless steel, ceramic, aluminum nitride, or the like from the viewpoint of halogen resistance, non-reactivity with solder, and the like. The depth of the concave portion 80a is formed to be smaller than the outer diameter of the solder ball 48, and is configured such that when the solder ball 48 is accommodated in the concave portion 80a, the solder ball 48 projects from the surface of the joining jig 80. I have. In the present embodiment, since the bonding jig 80 is used as it is in the bonding step described later, the depth of the concave portion 80a is set such that the solder ball 48 is sufficiently pressed onto the connecting conductive part 54 of the IC 50 in the bonding processing described later. The solder ball 48 must be formed to be somewhat shallower than the outer diameter of the solder ball 48 so as to be able to be joined.

Next, the inside of the fluoridation processing chamber 180 is replaced with an inert gas, and as shown in FIG.
By pressing the solder ball 48 with 1, the upper part of the solder ball 48 is flattened. In this case, solder ball 4
8 is pressed by the pressing plate 81, the upper portion is flattened and a flat surface 48a is formed as shown in FIG. 9A.
In the case where the pressure treatment is performed as in the present embodiment, at the same time as the flat surface 48a is formed, the lower portion in contact with the inner bottom surface of the concave portion 80a is also flattened to form the flat surface 48b.

[0106] When the flat surface 48a in this manner is formed, the thickness (height) d ₁ of the solder balls 48, the height of the spherical original solder ball 48 smaller than (= outer diameter) d ₀ Become. When a spherical metal particle is used as the conductive member like the solder ball 48, the thickness ratio d ₁ / d before and after the flattening process is performed.
₀ is preferably in the range of 0.6 to 0.9,
In particular, it is desirable to be within the range of 0.7 to 0.88. If the thickness is below these ranges, the metal grains are too crushed to make the subsequent bonding process difficult, and the shape as the protruding electrode cannot be obtained. Beyond these ranges, the area of the flat surface formed by the flattening becomes small, and the effects such as improvement of the bonding state by the flattening process, reduction of the variation of the bonding state, and reduction of the bonding failure cannot be obtained. Specifically, the outer diameter is 0.1 mm.
In the case of a 35 mm solder ball, the thickness after the flattening process is about 0.3 mm, and in the case of a solder ball with an outer diameter of 0.76 mm, the thickness after the flattening process is about 0.6 mm. The bonding jig 80 since it is also used as such in the bonding process, as described below, the depth d ₂ of the concave portion 80a is made further smaller than the thickness d ₁ of the solder balls 48 after the flattening process. That is, even after the flattening process, the upper portion of the solder ball 48 protrudes from the surface of the joining jig 80 (the opening edge of the concave portion 80a).

The advantages of the flattening process are that the contact area is increased, the bonding state is improved, the bonding strength is enhanced, and the solder balls 48 arranged as described above are collectively formed by a flat plate or the like. An advantage of flattening by plastic deformation is that the flat surfaces 48a of the plurality of solder balls 48 have the same height and are arranged on the same plane, so that the pressing force is evenly applied during the joining process. In addition, variations in the bonding state are reduced, and bonding defects and the like are less likely to occur.

Next, the flat surface 48a of the solder ball 48 subjected to the flattening process is subjected to a fluoridation process as shown in FIG. This fluorination treatment is performed by introducing a gas obtained by mixing hydrogen fluoride (HF) and water vapor into the fluorination treatment chamber 180 as described above, and bringing the gas into contact with the flat surface 48a. Flat surface 48
Since a is flattened by pressurization, the outer surface of the original solder ball is broken and the inside is exposed, so that the above-described halogenation reaction is promoted and the processing is performed more effectively. Further, by forming the flat surface 48b,
Since the solder ball 48 does not roll in the concave portion 80a from the time of the fluoridation process to the time of the joining process, the halogenated flat surface 48a surely comes into contact with the connecting conductive portion described later, and is securely and strongly joined. It also has the advantage of

The flattening process can be performed by removing a portion that is to be a bonding surface of metal particles to form a flat surface, in addition to the above-described process using pressure. Also in this case, halogenation is promoted since the formed flat surface has the outer skin of the metal particles removed.

In the case of solder balls, the halogenation treatment can be performed, for example, at a treatment time of 30 to 90 seconds, a fluoride concentration of hydrogen fluoride of 4400 ppm, and a surface temperature of the solder balls of 90 ° C. The processing time is adjusted in the above range in consideration of the bonding conditions described later.

FIG. 9B shows another concave portion 80b formed in the joining jig 80. As shown in FIG. This recess 80b
A concave curved surface 80c substantially matching the outer surface (spherical surface) of the solder ball 48 is formed on the inner bottom surface of the solder ball 48.
Without flattening the top shape of the protruding electrode formed by the above, that is, without forming the flat surface 48b,
Only the flat surface 48a can be formed. Therefore, in this case, in addition to the effect of increasing the contact area with the connection conducting portion, promoting the halogenation reaction, preventing the rolling of the solder ball in the concave portion, the shape of the top of the protruding electrode is originally determined. There is an advantage that the solder ball 48 can be formed without impairing the outer shape.

FIGS. 9 (3) and (4) show examples of the shape of metal particles which can be used in place of the spherical metal particles such as the solder balls 48 described above. The one shown in FIG. 9 (3) is a columnar metal particle, and the one shown in FIG. 9 (4) is a rectangular parallelepiped (or cubic) metal particle. By using metal grains having such a shape, the above-described flattening treatment is not required.

Next, the process of joining the solder ball 48 having the surface halogenated as described above to the IC 50 will be described. This step is performed in the bonding processing chamber 190 shown in FIG. The bonding processing chamber 190 is filled with an inert gas such as a nitrogen gas. As described above, the bonding jig 80 holding the arrangement of the solder balls 48 is attached to the holder 91 in the bonding processing chamber 190.
Attached to. The holder 91 is configured to be slidable along a guide rod 92 extending up and down, and is configured to move up and down by a driving device (not shown). Above the joining jig 80, a pressure head 93 that moves up and down by a drive mechanism (not shown) is arranged. Pressure head 9
A heater 94 is provided inside 3. At the lower part of the pressure head 93, a gripping part 9 composed of a vacuum suction means or the like is provided.
5 are provided, and the IC 50 is gripped. The IC 50 is exactly the same as that described above, and is provided in a state where the connecting conductive portions 54 exposed on the lower surface thereof are arranged in a lattice.

A table 96 having a flat surface is arranged below the joining jig 80, and a heater 97 is provided inside the table 96. Further, a heat insulating plate 98 is disposed between the joining jig 80 and the upper pressing head 93, and the joining jig 80 and the lower table 9 are disposed.
A heat insulating plate 99 is also provided between the heat insulating plate 6 and the heat insulating plate 6. These heat insulating plates 98 and 99 are connected to the joining jig 80 as shown in the figure.
Between the upper and lower shielding positions and the retracted position shifted from the upper and lower positions of the joining jig 80 in a substantially horizontal direction.

In the joining processing section, first, the heat insulating plates 98 and 99 are arranged at the upper and lower positions of the joining jig 80 as shown in the figure, and the pressing head 93 and the table 96 are heated in advance by using the heaters 94 and 97. Keep it. When the solder balls 48 are used, the heating set temperature of the pressure head 93 is 100 to
180 ° C, the heating set temperature of the table 96 is 0 to 180 ° C
It is. At this time, the table 96 is set to perform auxiliary heating.
6 may be heated to the same extent, the table 96 may be the main heating means, and the pressure head 93 side may be the auxiliary heating means. Note that these heating set temperatures are set in the same manner as described above, with the solder ball 48 to be joined and the connection conducting portion 5 being connected.
The temperature is set to be lower than any of the melting points of No. 4. This is because the bonding mode of the present embodiment is solid bonding, and bonding can be performed without melting the bonding interface.

In this state, since heat radiated from above and below can be cut off by the heat insulating plates 98 and 99, the solder balls 48 which have been subjected to the halogenation treatment are used.
Can be prevented from being released from the halogenated surface due to heating of the surface, or the surface state from being changed to a state unsuitable for bonding due to an oxidation reaction or the like. In addition,
Since the heat insulating plates 98 and 99 are heated by radiant heat, it is preferable to provide a liquid passage, an air passage, or the like inside and perform liquid cooling or air cooling. In particular, when the distance between the pressing head 93 or the table 96 and the joining jig 80 is short, the heat insulating plates 98 and 99 themselves are overheated and become a radiant heat source. Conversely, if the distance is increased, the moving distance of the pressing head 93 and the joining jig 80 is increased, the accuracy of the moving mechanism is reduced, and displacement in the direction of the joining surface is likely to occur. Therefore, it is preferable that the heat insulating plate can sufficiently block heat even at a short distance.

Next, the upper heat insulating plate 98 is retracted as shown by the arrow in the figure, and the pressurizing head 93 is lowered as shown by the arrow in the figure to bring the connection conducting portion 54 of the IC 50 into contact with the solder ball 48. Here, the concave portion 8 of the joining jig 80
0a are arranged and formed in a state corresponding to the arrangement state of the connection conducting parts 54 previously arranged on the surface (the lower surface in the figure) of the IC 50. Therefore, only by lowering and bringing the IC 50 into contact, each connection conducting part 54 and the solder ball 48 come into contact with each other. The pressurizing head 93 may be configured to apply a certain pressing force to the bonding jig 80 at this point, or to not apply a sufficient pressing force at this point. Is also good.

Next, after the lower heat insulating plate 99 is retracted as shown by the arrow in the figure, the holder 91 is moved to the guide rod 9.
Lower along 2. Then, the lower surface of the joining jig 80 is brought into contact with the surface of the table 96, and the interface between the solder ball 48 and the connection conducting portion 54 is indirectly heated by heat conduction. In this state, the solder ball 48 and the connecting conductive portion 54 sandwiched between the upper and lower members receive a stable pressing force and heating, so that the joining of the two proceeds. For example, when the solder ball 48 has an outer diameter of 0.35 mm, the pressing force is 200 g /
And the time required for bonding is 15 seconds or less.

When the joining process is completed, the holder 91 moves up, and the pressure head 93 releases the IC 50 and retracts upward. Then, the heat insulating plates 98 and 99 extend to block radiant heat. Therefore, even after the joining process, the process can be quickly finished without performing extra heating.

In this bonding method, heat can be applied to a large number of sets of solder balls and connecting conductive portions at once, and the heat source is controlled at a constant temperature. The uniformity of heating can be ensured, and the joining state can be made uniform. As another heating method, individual heating can be performed by irradiating a laser beam or the like, but from the viewpoint of ensuring uniformity of the heating state, the present embodiment is superior.

After the halogenation treatment shown in FIG. 8 (3) is performed, the bonding treatment shown in FIG. 10 is performed.
It is preferable that at least the upper part (flat surface) of the halogenated solder ball 48 is kept in an inert gas so as not to be exposed to the atmosphere. The time from the halogenation treatment to the joining treatment is preferably as short as possible. For example, it is desirable to complete the joining within 30 minutes after the halogenation treatment is completed. By doing so, bonding defects can be significantly reduced. Incidentally, it has been confirmed that when exposed to the air (in an atmosphere containing oxygen) between the halogenation treatment and the bonding treatment, or when a time exceeding 30 minutes elapses, a bonding failure is likely to occur.

Next, another joining processing method will be described with reference to FIG. In this bonding method, an apparatus having basically the same structure as the bonding apparatus shown in FIG. 10 can be used, but the heating method in the bonding processing is different. First, the heater 94 of the heating head 93 and the heater 97 of the table 96 are not initially supplied with power and do not generate heat. In this state, the pressurizing head 93 is lowered as shown by the arrow in the drawing, and the connecting conductive portion 54 is pressed against the solder ball 48 arranged on the joining jig 80. Then, as shown by the arrow in the drawing, the pressing head 93 and the bonding jig 8
0 is integrally lowered, and the joining jig 80 is
Also contact. Then, in this state, the heaters 94, 9
7 is energized to start heating.

In this heating method (pulse heating method),
Unlike the above-described heating method (constant heating method), the halogenated surface (the surface of the solder ball 48 in the example of the present embodiment) serving as a bonding interface is not heated before bonding. The joining process can be performed without deteriorating the finished surface. However, in this pulse heating method, a time lag occurs before the joint interface is heated compared to the constant heating method,
In some cases, the cycle time becomes longer, and in some cases, a heating means larger than the bonding processing area is required to obtain uniform heating temperature.

FIG. 12A shows the control temperature of the heater and the temperature change of the work (in this case, the bonding interface) by the heating method of the pulse heating method. in this case,
The heat generation time (pulse width) of the heater is determined by empirically confirming that the temperature of the work reaches a desired bonding temperature and that the bonding temperature is maintained for a required time by experience or by measurement. Before and after the joining process, no extra heating is applied to the joining interface as shown. On the other hand, as shown in FIG. 12 (2), in the case of the constant heat method, the workpiece is heated by being brought into contact with a heating medium heated to a predetermined temperature in advance, so that the temperature before and after the joining process is sufficiently reduced. Requires a heat transfer suppressing means such as the above-mentioned heat insulating plate. If such a heat transfer suppressing means is not provided, it is more difficult to suppress the temperature before and after the bonding process than the characteristics shown. In particular, if the halogenated surface is heated before the bonding process, the bonding state deteriorates even if the heating temperature is low, so that bonding failure may frequently occur.

The above embodiments are merely examples for realizing the present invention, and the present invention is not limited to the above-described illustrated examples, and can be variously changed without changing the gist of the present invention. It is.

[0126]

Since the present invention is configured as described above, it has the following effects.

According to the method of forming a projecting electrode according to claim 1, a method of forming a projecting electrode for joining a conductive member to a surface of a connecting conductive portion provided on an electric component is provided. Halogenating at least one surface of the conductive member and the conductive member, contacting the halogenated portion so as to be located at an interface between the connection conductive portion and the conductive member, and solid-joining to form a protruding electrode on the electric component. Therefore, the two joining members can be joined without melting. Therefore, the flux can be made unnecessary, and the washing step can be omitted. In addition, it is possible to eliminate the necessity of forming a mask or a wiring pattern for forming a protruding electrode.

Further, according to the projection electrode forming apparatus of the present invention, a halogenated portion for halogenating at least one surface of the connection conductive portion provided on the electric component and the conductive member is provided. Since it is configured to provide a bonding processing part for bringing the connection conductive part and the conductive member into close contact with the halogenated surface as an interface, the flux can be made unnecessary as described above, and the cleaning step is also performed. Can be deleted. In addition, it is possible to eliminate the necessity of forming a mask or a wiring pattern for forming a protruding electrode.

Further, according to the component for forming a projecting electrode according to the twenty-first aspect, it is a component for forming a projecting electrode in which a conductive member is joined to a connecting conductive portion provided on an electric component, and the joining is performed on at least one of the components. The surface is made by the close contact between the conductive member whose surface is halogenated and the conductive part for connection, and the height of the conductive member from the conductive part for connection is uniform due to the pressure required for the close contact. For example, when placed on a substrate or the like, no gap is generated between the conductive member and the substrate or the like. For this reason, it is possible to prevent the occurrence of a connection failure between the conductive member and the substrate or the like even when the reflow process is performed, and it is possible to improve the reliability of mounting formed components.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a configuration of a projection electrode forming apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing specific structures (1) and (2) of a first fluorination processing unit 12;

FIG. 3 is a schematic diagram showing specific structures (1) and (2) of a second fluorination processing unit 14;

FIG. 4 is a schematic diagram showing specific modes (1), (2) and (3) of a joining process using joining jigs 42U and 42D.

FIGS. 5A and 5B are configuration diagrams (1) and (2) showing a configuration for performing alignment of connection jigs 42U and 42D.

FIG. 6 is an explanatory view (1) showing a state of an IC 50 in which a solder ball 48 is missing from a connecting conductive portion 54, and a single connecting conductive portion 5 without interfering with surrounding solder balls 48;
FIG. 9 is a configuration diagram (2) illustrating a form of a second fluorination processing unit 14 that fluorinates only 4.

FIG. 7 is an explanatory view (1) showing a state in which a repair step is performed, and an explanatory view (2) showing the forms of bonding jigs 42U and 42D used in the repair step.

FIG. 8 is a schematic explanatory view (1) to (3) schematically showing a method and an apparatus configuration of a planarization process and a halogenation process in another embodiment according to the present invention.

9 is an enlarged explanatory view (1) showing a deformed state of the solder balls arranged in the joining jig shown in FIG. 8, an enlarged explanatory view (2) showing the structure of another joining jig, and another metal grain. It is an expansion perspective view (3) and (4) which show a shape.

FIG. 10 is a schematic configuration diagram showing a structure of a bonding processing method and a bonding processing apparatus according to another embodiment of the present invention.

FIG. 11 is a schematic configuration diagram showing a structure of a bonding method and a bonding apparatus according to still another embodiment of the present invention.

FIG. 12 is a graph showing a change over time of a heater temperature and a work temperature by a heating method in the bonding processing method shown in FIGS. 10 and 11;

FIG. 13 is an explanatory cross-sectional view illustrating a configuration of an integrated circuit.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Integrated circuit 2 Chip 2A electrode 3 Gold wire 4 Land 5 Resist 6 Solder ball 10 Protrusion electrode forming apparatus 12 First fluorination processing part 14 Second fluorination processing part 16 Joining processing part 18 Reaction chamber 20 Pipe 22 Pipe 24 HF Gas supply unit 26 Steam generation unit 28 Solder ball storage 30 Magazine loader 32 Chamber 34 Argon gas supply unit 36 Table 38 Suppression plate 40 Upper and lower cylinders 42 U, D Joining jig 44 Heater 46 Magazine unloader 48 Solder ball 50 IC 51 Mold 52 Cover 54 Connecting Conductor 56 Exposure Hole 58 Vacuum Attraction Means 60 Hole Mask 62 Through Hole 64 Mark 66 CCD 68 Inner Tube 70 Outer Tube 72 Escape Hole 80 Joining Jig 80a Recess 91 Holder 92 Guide Rod 93 Pressure Head 94, 97 Heater 95 gripper 96 table 180 fluoridation chamber 190 bonding chamber

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shuji Tanaka 3-5-5 Yamato, Suwa-shi, Nagano Seiko Epson Corporation (72) Inventor Youhei Kurashima 3-3-5 Yamato, Suwa-shi, Nagano Seikoー Epson Corporation

Claims (35)

[Claims] 1. A method for forming a protruding electrode for joining a conductive member to a surface of a connecting conductive portion provided on an electric component, wherein at least one surface of the connecting conductive portion and the conductive member is halogen. Forming a protruding electrode on the electric component by contacting the surface so as to be located at an interface between the connecting conductive portion and the conductive member and performing solid bonding. . 2. The method according to claim 1, wherein the conductive member is a metal particle made of a metal material for forming an electric contact. 3. The method according to claim 1, wherein the connection conductive portions are arranged in a grid on the surface of the electrical component. 4. The formation of a bump electrode according to claim 1, wherein the bonding between the connection conducting portion and the conductive member is performed by heating the interface. Method. 5. The method according to claim 4, wherein the interface is substantially heated after a point in time when the conductive portion for connection and the conductive member are brought into contact with each other. 6. The method according to claim 1, wherein heat transfer to the surface is suppressed so that the halogenated surface is not substantially heated before the connection conductive portion is brought into contact with the conductive member. 6. The method for forming a bump electrode according to claim 4 or claim 5. 7. The method according to claim 1, wherein the connection between the connection conductive portion and the conductive member is performed in a state where the contact pressure at the interface is increased by pressurization. The method for forming a bump electrode according to the above. 8. The projecting electrode according to claim 1, wherein the joining between the connection conducting portion and the conductive member is performed in an atmosphere of an inert gas. Formation method. 9. The method according to claim 1, wherein the surface is kept in an atmosphere of an inert gas until the surface of the surface is halogenated and the conductive portion is brought into contact with the conductive member. 9. The method for forming a bump electrode according to any one of 8. 10. The protruding electrode according to claim 1, further comprising a step of flattening a surface of the conductive member to be joined to the connection conductive portion. Formation method. 11. A plurality of said conductive members are arranged and held in accordance with an arrangement state of said arranged plurality of connection conducting parts, and said surface of said conductive member is flattened in said arrangement state. The method according to claim 10, wherein the connection portion is joined to the connection conductive portion in the arrangement state. 12. The method according to claim 1, wherein the conductive member having a flattened surface is used. 13. The method for forming a bump electrode according to claim 10, wherein the flattened surface is halogenated and then joined to the connection conducting portion. 14. A halogenated portion for halogenating at least one surface of a connection conductive portion provided on an electric component and a conductive member, and the connection conductive portion and the connection conductive portion having a halogenated surface as an interface. An apparatus for forming a protruding electrode, comprising: a bonding processing section for bringing the conductive member into close contact with the conductive member. 15. The apparatus according to claim 14, wherein the conductive member is a metal particle made of a metal material for forming an electrical contact. 16. The electrical connection part according to claim 1, wherein the connection conducting parts are arranged in a grid on the surface of the electric component.
An apparatus for forming a bump electrode according to claim 4 or claim 15. 17. The heating device according to claim 14, wherein the joining processing unit has a heating unit capable of heating the interface to a temperature lower than a melting point of any one of the connection conducting unit and the conductive member. An apparatus for forming a protruding electrode according to claim 16. 18. The formation of a bump electrode according to claim 17, wherein the heating means substantially heats the interface after a point of contact between the connection conducting portion and the conductive member. apparatus. 19. The bonding section suppresses heat transfer to the surface so that the halogenated surface is not substantially heated before the connecting conductive portion is brought into contact with the conductive member. 19. The apparatus according to claim 17, further comprising a heat transfer suppressing unit. 20. The projection electrode forming apparatus according to claim 14, wherein the bonding processing unit has a pressing unit that increases a contact pressure at the interface. 21. The bonding unit according to claim 14, further comprising an inert gas supply chamber in which the electric component and the conductive member are arranged and an inert gas is supplied. An apparatus for forming a protruding electrode according to claim 20. 22. The apparatus according to claim 13, wherein said surface is held in an atmosphere of an inert gas until the surface of the surface is halogenated and the conductive member for connection is brought into contact with the conductive member. An apparatus for forming a bump electrode according to any one of claims 14 to 21. 23. The semiconductor device according to claim 14, further comprising: flattening means for flattening a surface of the conductive member to be joined to the connection conductive portion.
3. The projection electrode forming apparatus according to any one of 2. 24. An arrangement holding member for arranging and holding a plurality of conductive members corresponding to an arrangement state of the arranged plurality of connection conducting portions, and a state held by the arrangement holding member. 24. The projection electrode forming apparatus according to claim 23, wherein the surface of the conductive member is flattened, and thereafter, the conductive member is joined to the connection conducting portion while being held by the array holding member. 25. The conductive member according to claim 23, wherein the surface of the conductive member is flattened, then the surface is halogenated, and then the conductive member is joined to the connection conductive portion. 3. The method for forming a bump electrode according to 1. 26. The halogen processing section comprises a halogen gas supply chamber, and the halogen gas supply chamber is provided with an inlet and an outlet for the conductive member.
The projection electrode forming apparatus according to any one of claims 14 to 25, wherein a slope is formed between the inlet and the outlet. 27. The halogen processing section includes a halogen gas supply chamber and a cover that can be put into the halogen gas supply chamber and surround the electric component. 26. The apparatus for forming a bump electrode according to claim 14, wherein a corresponding exposure hole is provided so that the connection conductive portion can contact the atmosphere of the halogen gas supply chamber. 28. A conductive member accommodating section, wherein said joining processing section is provided with an electric component pressing section provided above said conductive member accommodating section and capable of pressing said connection conducting section against said conductive member accommodating section. Wherein the conductive member storage portion is provided with a depression corresponding to the connection conducting portion, and the depth of the depression is set so that the conductive member protrudes from the depression. An apparatus for forming a bump electrode according to any one of claims 14 to 27. 29. The projection electrode forming apparatus according to claim 28, wherein the surface of the depression is made of an aluminum material. 30. A marking for positioning is provided on a surface of the electric component having the connection conducting portion, and a marking detecting means is provided on the conductive member housing portion side, and the marking is provided on the electric component pressing portion. 3. A moving means connected to the detecting means.
An apparatus for forming a bump electrode according to claim 8 or 29. 31. A single dent is provided in a central region of the conductive member accommodating portion, and a relief hole having a diameter larger than that of the conductive member is provided at a position of the connection conducting portion corresponding to a periphery of the dent. 31. The apparatus for forming a protruding electrode according to claim 30, wherein the apparatus is provided. 32. The halogen treatment section is constituted by a double pipe composed of an inner pipe and an outer pipe, and the groove position of the inner pipe is arranged stepwise so as to be drawn in from the groove position of the outer pipe. 26. The projection electrode according to claim 14, wherein a diameter of the inner tube is made to correspond to a diameter of the connection conducting portion so that a halogen gas can be supplied from the inner tube. apparatus. 33. The projection according to claim 14, wherein the electric component is a bare chip, and the conductive member to be brought into close contact with the connection conductive portion is for forming a bump in the bare chip. An electrode forming device. 34. A component for forming a protruding electrode in which a conductive member is joined to a connection conducting portion provided on an electric component, wherein the joining is performed with the conductive member having at least one surface halogenated. A projecting electrode forming part, wherein the height of the conductive member from the connection conducting part is uniform due to the pressurization required for the adhesion, which is performed by close contact with the conducting part. 35. The component according to claim 34, wherein the connection conducting portions are arranged in a grid on the surface of the electrical component.