JPH11329982A - Manufacture of epitaxial wafer and device for manufacturing semiconductor to be used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of a pit accompanied with cleaning, by preventing metallic gains from being directly adhered to a silicon epitaxial layer. SOLUTION: An epitaxial wafer EPW obtained in a step S2 is carried from a reaction chamber in a step S3, and O3 water cleaning or SC1 cleaning is immediately operated in a step S4 so that a chemical silicon oxide film C can be formed on the surface of a silicon epitaxial layer E. Afterwards, even when the adhesion of metallic grains M is generated while prescribed measurement or inspection is operated in steps S5 and S6, oxidation/reduction reaction between a silicon epitaxial layer E and the metallic grains M can be suppressed by the chemical silicon oxide film C, and hard adhesion can be prevented. Thus, even when SC1+SC2 cleaning 13 operated in a step S7, any pit cannot be generated in the silicon epitaxial layer E.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an epitaxial wafer used for manufacturing a semiconductor, and more particularly to a method for manufacturing an epitaxial wafer in which a silicon oxide film is formed on the surface of a silicon epitaxial layer.

[0002]

2. Description of the Related Art With the dramatic improvement in the degree of miniaturization and high integration of semiconductor integrated circuits, in recent years, the surface of a semiconductor substrate on which sub-quarter micron rule processing is performed,
The number of fine particles having a size of about 0.1 μm is 100 / cm
It is required to keep it to ² or less and to have a flatness of the atomic order.

Conventionally, a so-called RCA cleaning method proposed in the 1970's has been widely used as a method for cleaning a semiconductor wafer to suppress the number of fine particles, with repeated improvements. RCA cleaning is cleaning with an ammonia-hydrogen peroxide mixed solution (SC1 cleaning) for removing fine particles by using electrostatic repulsion between fine particles such as silicon and a wafer in an alkaline solution (SC1 cleaning), and ionizing metal. Cleaning with a mixed solution of hydrochloric acid and aqueous hydrogen peroxide to be removed (SC2
Cleaning) and dilute hydrofluoric acid cleaning (DHF cleaning) for removing a natural oxide film on the silicon surface according to the purpose. This may be combined with washing with a mixed solution of sulfuric acid and hydrogen peroxide to remove metals and organic substances, if necessary.

[0004] By the way, as future semiconductor wafers,
It is expected that silicon epitaxial wafers in which a silicon single crystal thin film is similarly vapor-phase grown on a mirror-polished surface of a silicon single crystal substrate will be increasingly used. This is due to the fact that, for recent semiconductor devices that have reduced the amount of charge handled due to miniaturization, the possibility that minute defects near the wafer surface will have a fatal effect on device characteristics is greater than ever before, while pulling up from the melt This is because it is difficult to reduce such minute defects caused by crystals in a mirror-polished wafer manufactured by slicing and polishing the obtained silicon single crystal ingot.

FIG. 4 shows a process flow of a general epitaxial wafer. First, the silicon single crystal substrate S mirror-polished in step S11 is carried into the reaction chamber of the vapor phase growth apparatus. Next, in step S12, an epitaxial layer E is grown in the reaction chamber. Next, in step S13, the completed epitaxial wafer EP
W is carried out of the reaction chamber. The unloaded epitaxial wafer EPW is subjected to characteristic value measurement such as film thickness measurement and flatness measurement in the following step S14, and further, in step S1.
At 5, the appearance inspection is performed. The epitaxial wafer EPW that has passed the appearance inspection is cleaned in the subsequent step S16. The cleaning at this time is generally performed by SC1 cleaning for removing fine particles and SC2 cleaning for removing metal.
This is performed by washing.

[0006]

Incidentally, the silicon epitaxial layer E of the epitaxial wafer EPW just unloaded from the reaction chamber in the above step S13.
Is extremely active, so if metal particles M such as gold (Au) or copper (Cu) are floating in a clean room, the metal particles M will be on the surface during various measurements and inspections. It is highly likely that it will adhere directly. Whether or not the metal microparticles M are directly attached to the surface of the silicon epitaxial layer E can be observed using, for example, a scanning electron microscope (SEM). The possibility of this adhesion increases as the time for exposing the epitaxial wafer EPW to the atmosphere in the clean room becomes longer. Then, with the metal fine particles M directly attached to the surface of the silicon epitaxial layer E, SC1 + SC
2 It was found that a large number of pits P were formed on the surface of the silicon epitaxial layer E when the cleaning was performed.

Therefore, the silicon epitaxial layer E
Some measures are required to prevent the metal fine particles M from adhering to the surface of the metal. An object of the present invention is to provide a method for manufacturing an epitaxial wafer which can be an effective measure against this problem, and a semiconductor manufacturing apparatus suitable for use in the method.

[0008]

According to the method of manufacturing an epitaxial wafer of the present invention, a silicon epitaxial layer is vapor-phase grown on a silicon single crystal substrate to obtain an epitaxial wafer, and without any other steps, A chemical silicon oxide film is formed on the surface of the silicon epitaxial layer to form a so-called passivation (passiva).
to prevent the metal fine particles from directly adhering to the surface of the silicon epitaxial layer, and then to send the epitaxial wafer to the next step, thereby achieving the above object. It is. The chemical silicon oxide film described in the present invention is different from a natural oxide film in that it is formed artificially by using a chemical reaction. The next step envisioned by the present invention is typically the first step performed after vapor phase growth in a conventional process, such as film thickness measurement, flatness measurement, and appearance inspection.

The above-described chemical silicon oxide film can be formed, for example, by bringing a silicon epitaxial layer into contact with a solution containing an oxidizing agent. As this solution, an ammonia-hydrogen peroxide mixed solution (so-called SC1 cleaning solution)
Alternatively, it is preferable to use ozone-added water.

A semiconductor manufacturing apparatus for actually performing the method for manufacturing an epitaxial wafer of the present invention includes:
A reaction chamber for vapor-phase growth of an epitaxial layer on a silicon single crystal substrate, a post-processing chamber for forming a chemical silicon oxide film on the surface of the epitaxial layer and performing a passivation process, and these two chambers are interconnected. And a transport path provided with means for transporting the silicon epitaxial wafer. It is preferable that the post-processing chamber includes a solution supply unit that supplies a solution containing an oxidizing agent to the surface of the epitaxial layer.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Immediately after a silicon epitaxial layer is vapor-phase grown, if a thin chemical silicon oxide film is formed on the surface thereof, metal fine particles float during or until the next step. Even when the epitaxial wafer is left in a clean room for a long time, the metal fine particles do not directly adhere to the surface of the silicon epitaxial layer. Therefore, no pits are formed even if SC1 cleaning is performed later. In fact, since the time required for each process is different at a semiconductor manufacturing site, depending on the wafer, the waiting time before being carried into the next process may be extremely long. The present invention is extremely effective in preventing metal contamination of the epitaxial wafer in such a case.

In the present invention, SC1 cleaning and ozone (O ₃ ) are used as one method of forming the chemical silicon oxide film.
Washing with added water (hereinafter referred to as O ₃ water washing) is employed. Although SC1 cleaning is generally performed for the purpose of removing fine particles, the present inventors can obtain extremely good results by using this for the purpose of forming a chemical silicon oxide film as a passivation film on the surface of an epitaxial layer. It was found that it could be obtained.

[0013] O ₃ water cleaning is described in, for example, Nikkei Micro Devices, March 1997, p. 90-95 (Nikkei B
P Company). This method was originally proposed for cleaning a silicon substrate to which metal fine particles had already adhered. That is, even in a system in which metal fine particles such as Cu and Au coexist with the silicon surface, electrons can be preferentially extracted from the silicon surface rather than the metal fine particles if they have a strong oxidizing effect of O _3. it can. As a result, the metal can continue to be stably present in water in an ionized state, and one silicon surface is covered with a thin silicon oxide film to interrupt electron exchange with the metal ions. It is possible to prevent the metal fine particles from re-adhering to the surface. According to the present invention, such O ₃ water cleaning is performed on a silicon epitaxial wafer before metal contamination occurs, thereby enabling effective passivation.

The process flow of the present invention will be described with reference to FIG. First, in step S1, the mirror-polished silicon single crystal substrate S is carried into the reaction chamber of the vapor phase growth apparatus. Next, in step S2, the epitaxial layer E is vapor-phase grown in the reaction chamber. Next, step S3
, The completed epitaxial wafer EPW is carried out of the reaction chamber. The unloaded epitaxial wafer EPW is immediately washed with O ₃ water or SC1 to form a chemical silicon oxide film C on the surface of the epitaxial layer E.

The epitaxial wafer EPW passivated with the chemical silicon oxide film C is thereafter subjected to film thickness measurement and flatness measurement in step S5, and to step S5.
6, the metal fine particles M may adhere to the chemical silicon oxide film C during this time. However, the adhesion of the metal fine particles M is weak, and they are removed by the SC1 + SC2 cleaning in the next step S7. That is, since the fine metal particles M are not in direct contact with the epitaxial layer E as in the related art, there is no possibility that pits P are generated in the epitaxial layer E.

The O ₃ water washing can also remove organic deposits, and generates CO ₂ and O ₂ by decomposition of the organic substances. In other words, the O ₃ water cleaning can remove both the metal fine particles and the organic deposits in only this one step.
O ₃ in water cleaning besides this, not to an acid or alkaline chemical liquid as in the conventional RCA cleaning require large amounts, it required amount of ultrapure water for rinsing is small, also the required amount of drug solution There is also an advantage that the amount of generated steam is small because of the small amount, thereby reducing the burden of air conditioning in the clean room.

As a method for preparing O ₃ -added water, for example, a method in which O ₃ generated by electrolysis of ultrapure water or an AC silent discharge of O ₂ gas is introduced into ultrapure water through a gas permeable membrane or bubbling, There is a method in which ultrapure water containing dissolved oxygen is irradiated with ultraviolet rays to directly generate O ₃ in water.
Note that ultrasonic vibration may be applied to the O ₃ added water. In this case, the frequency may be in a range used normally.
However, the size of the fine particles that can be removed differs depending on the frequency. In a relatively low frequency region of about 100 kHz or less, cavitation (cav) generated inside the solution is generated.
10μ in diameter due to the function of “itation = microscopic cavity”
It is possible to peel relatively large fine particles of m or more. On the other hand, in a so-called megasonic high frequency region of about 500 kHz or 1 MHz or more,
A shock wave generated with the propagation of vibration in the solution collides with the epitaxial wafer, and fine particles having a diameter of 2 μm or less can be removed.

In the present invention, the chemical silicon oxide film formed on the surface of the silicon epitaxial layer has a very uniform and thin film thickness, unlike a natural oxide film formed when the epitaxial wafer is left in the air, and furthermore has a metal contamination. It can be formed without. A thickness of 0.3 to 1 nm is sufficient, and may be appropriately selected according to the conditions for forming the chemical silicon oxide film. For example, in the case where an epitaxial wafer is vertically placed in a cleaning tank filled with ultrapure water in O ₃ water cleaning, and a chemical silicon oxide film is formed while supplying O ₃ from a diffuser at the bottom of the cleaning tank, Then, a chemical silicon oxide film is gradually grown from the lower side of the wafer to the upper side. In such a case, the time during which the entire surface of the wafer is covered with the chemical silicon oxide film varies depending on conditions such as liquid temperature, wafer diameter, and O ₃ flow rate. The thickness of the oxide film will also be different.

The semiconductor manufacturing apparatus for manufacturing an epitaxial wafer according to the present invention as described above has an epitaxial wafer between the reaction chamber of the vapor phase growth apparatus and the post-processing chamber for passivation. What is necessary is just to be comprised so that it may be transferred, without being exposed to an environment. The transfer path that enables this transfer is a transfer path that connects the reaction chamber and the post-processing chamber to each other while maintaining a clean atmosphere, and includes a wafer transfer unit. FIG. 2 shows a configuration example of such a semiconductor manufacturing apparatus. In this configuration, the transport path 3b, the epitaxial reaction chamber (Epi) 1,
The transport path 3a, the post-processing chamber (PostP) 2, and the transport path 3c are arranged in-line via the gate valve 5, respectively. Each transport path 3b, 3a, 3c is provided with a handler 4b,
4a and 4c, so that wafers can be transferred between adjacent chambers.

The post-processing chamber (PostP) 2 has a solution supply means for supplying O ₃ -added water or an ammonia-hydrogen peroxide mixed solution as a solution containing an oxidizing agent to the surface of the epitaxial layer. Post-processing chamber (PostP)
No. 2 may perform processing in any of a single-wafer type and a batch type. In the case of a single wafer type, a rotary wafer stage is usually provided, and a nozzle which opens upward as a solution supply means is provided, and the surface of the wafer stage is rotated while rotating the wafer placed on the wafer stage. The required solution is supplied from the nozzle to perform post-treatment and cleaning. In the case of a batch system, a plurality of wafers housed in a suitable carrier are collectively immersed in a liquid tank filled with a necessary chemical solution or solution, and post-processing and cleaning are performed. According to such an apparatus configuration, a mirror-polished silicon single crystal substrate is carried in from the left side in the figure, a silicon epitaxial layer is formed on this wafer, and immediately thereafter, a chemical silicon oxide film is formed on this layer. A series of operations of forming and carrying out can be continuously performed in a clean atmosphere shielded from the external environment.

FIG. 3 shows another example of the semiconductor manufacturing apparatus according to the present invention, in which an epitaxial reaction chamber (Epi) 1 and a post-processing chamber (PostP) 2 are connected to one transfer path 3d. A load lock chamber (LL) for loading a mirror-polished silicon single crystal substrate into the transfer path 3d.
in) 6a and a load lock chamber (LLout) 6b for carrying out the epitaxial wafer after the formation of the silicon epitaxial layer and the passivation thereof are completed.
Are also connected via a gate valve 5.
In this configuration, the wafer is transferred between the chambers using the handler 4d provided in the central transfer path 3d.

In the apparatus configuration shown in FIGS. 2 and 3 described above, when O ₃ water cleaning is performed in the post-processing chamber (PostP) 2, ultrasonic vibration applying means is applied to the solution supply means for supplying the O ₃ water. Is more effective. When the O ₃ water cleaning is performed in a single wafer type, an ultrasonic vibrator can be built in, for example, near the discharge end of the nozzle. In the case of performing a batch type cleaning, an ultrasonic vibrator is provided inside the liquid tank. Can be immersed.

In the above-described example, the case where the formation of the chemical silicon oxide film is performed by a wet process has been described, but it is also possible to perform this by a dry process. For example, an O ₃ gas is introduced into the post-treatment chamber, ultraviolet rays are irradiated from outside through a transparent window made of, for example, quartz or the like, and the surface of the silicon epitaxial layer can be chemically oxidized using the generated oxygen active species. . According to the dry process, it is also possible to integrate the epitaxial reaction chamber and the post-processing chamber, and to omit the transfer path between these two chambers. For example, all necessary gas supply means such as a raw material gas for growing a silicon epitaxial layer, N ₂ gas as a purge gas, and O ₃ as an oxidizing gas are connected to a single chamber and supplied into the chamber. If the type of gas to be used is sequentially switched, epitaxial growth, chamber cleaning, and chemical silicon oxide film formation can all be continuously performed while the wafer is kept in one place.

[0024]

The epitaxial wafer used had a diameter of 2
A 15 μm-thick p-type silicon epitaxial layer is formed on a 00 mm p ⁺ -type silicon single crystal substrate whose main surface has an axis orientation of <100>. The epitaxial growth conditions were as follows as an example. H ₂ annealing conditions: 1130 ° C., 45 seconds Epitaxial growth temperature: 1130 ° C. H ₂ flow rate: 40 l / min Source gas (diluted SiHCl ₃ with H ₂ ) flow rate: 12 l / min Dopant (B ₂ H ₆ with H ₂ ) Dilution) flow rate: 100m
l / min Here, the next process such as film thickness measurement and flatness measurement is not performed, and the wafer is taken out of the vapor phase growth apparatus into a class 100 clean room and treated within 5 hours as an epitaxial wafer immediately after vapor phase growth. I will.

Embodiment 1 In this embodiment, SC1 cleaning and SC2 cleaning are sequentially performed on an epitaxial wafer immediately after vapor phase growth, and after leaving it in a clean room for a certain period of time, SC1 cleaning and SC2 cleaning are performed again. First, the number of pits generated on the main surface of the silicon epitaxial layer was examined. All the cleaning was performed by a batch method using a carrier made of tetrafluoroethylene capable of accommodating 25 wafers. The ammonia-hydrogen peroxide mixed solution used for SC1 cleaning is 29% by weight.
NH _3: 30 _{wt% H 2 O 2: H 2} O = 1: 1: is due mixing ratio of 5 (by volume). Washing temperature is 80 ℃
And SC2 hydrochloric acid used for washing - hydrogen peroxide mixture is 30 wt% HCl: 30 wt% H ₂ O _2: H ₂
This is due to the mixing ratio of O = 1: 1: 5 (volume ratio). The washing temperature was 80 ° C.

The operating procedure was as follows. (1) SC1 cleaning (1 time, 3 minutes) (2) Ultrapure water rinse (2 times, 3 minutes each) (3) SC2 cleaning (1 time, 3 minutes) (4) Ultrapure water rinse (2 times, (5 minutes each) (5) IPA (isopropanol) drying (1 time, 1 minute) (6) The epitaxial wafer is stored in a carrier and left in a clean room (class 10,000) for 3 days without covering (7) Ultrapure water Rinse (2 times, 3 minutes each) (8) SC1 wash (1 time, 3 minutes) (9) Ultrapure water rinse (2 times, 3 minutes each) (10) SC2 wash (1 time, 3 minutes) (11 ) Ultrapure water rinse (2 times, 3 minutes each) (12) IPA (isopropanol) drying (1 time, 1 minute) In the above process (6), the epitaxial wafer was left in a class 10,000 clean room for 3 days. ,
This is because the epitaxial wafer is intentionally contaminated with fine metal particles such as gold and copper floating in the clean room. The main surface of the epitaxial wafer having undergone the above procedure was examined using a surface foreign matter inspection device, and the diameter of the generated
The number of pits of 3 μm or more was counted. The results are shown in Table 1 below.

Example 2 In this example, the epitaxial wafer immediately after epitaxial growth was washed with O ₃ water, and the same operation as in Example 1 was performed. Then, the number of pits generated on the main surface of the silicon epitaxial layer was examined. The epitaxial wafer used was the same as that used in Example 1. Cleaning was performed in Example 1.
In the same manner as in the above, a batch process was performed, but O ₃ water washing was performed instead of the above-described operation procedures (1) to (3). The operating procedure was as follows. (1 ′) O ₃ water washing (1 time, 3 minutes) (4) to (12) are the same as in Example 1. However, the cleaning tank used here is for immersing 25 wafers accommodated vertically in the carrier at a time, and has a diffuser tube at the bottom for releasing O ₃ into ultrapure water. . The O ₃ flow rate was 15 l / min, the O ₃ concentration in the O ₃ water was 7 ppm, and the temperature was room temperature. The results are shown in Table 1 below.

COMPARATIVE EXAMPLE 1 Here, as a comparison with the above-mentioned example, a concentration of 0.
Dilute hydrofluoric acid cleaning was performed at room temperature using a 5% by weight dilute hydrofluoric acid aqueous solution. (1 ″) Dilute hydrofluoric acid cleaning (1 time, 3 minutes) (4) to (12) are the same as in Example 1. The results are shown in Table 1.

[0029]

[Table 1]

In Examples 1 and 2, a chemical silicon oxide film is formed on the wafer surface immediately after the epitaxial growth by (SC1 + SC2) cleaning or O ₃ water cleaning. In Comparative Example 1, a dilute hydrofluoric acid treatment is performed. The active bare surface of Si is exposed. It is clear that the number of pits generated in these examples is significantly smaller than that in the comparative example.

Examples 3 to 6 Here, the dependence of the number of pits on the O ₃ water cleaning time was examined. The epitaxial wafer used was the same as that used in Example 1. The cleaning was performed by a batch method as in Example 1. The washing procedure was as follows. (A) O ₃ water washing (once, 4 steps between 10 and 180 seconds) (b) Ultrapure water rinse (once, 3 minutes) (c) IPA (isopropanol) drying (once, 1 minute) (D) Leave the epitaxial wafer in the carrier for 3 days in a clean room (class 10,000) (e) Rinse with ultrapure water (2 times, 3 minutes each) (f) SC1 cleaning (1 time, 3 minutes) ( g) Ultrapure water rinse (2 times, 3 minutes each) (h) SC2 cleaning (1 time, 3 minutes) (j) Ultrapure water rinse (2 times, 3 minutes each) (k) SC1 cleaning (1 time, 3 minutes each) (15 minutes) (l) Ultrapure water rinse (2 times, 3 minutes each) (m) IPA (isopropanol) drying (1 time, 1 minute)

Note that the O ₃ water cleaning (a) is performed for 10 seconds (Example 3), 30 seconds (Example 4), and 6 seconds.
0 seconds (Example 5) and 180 seconds (Example 6). The reason why the SC1 cleaning is performed for 15 minutes in the step (k) is to exaggerate the state of occurrence of pits. The epitaxial wafer having undergone the above procedure was examined using a surface foreign matter inspection apparatus, and the number of pits having a diameter of 0.13 μm or more was counted. The results are shown in Table 2 below.

COMPARATIVE EXAMPLE 2 AND COMPARATIVE EXAMPLE 3 Here , as a comparison with Examples 3 to 6, in place of the above-mentioned cleaning of O ₃ water in (a), only pure water was used without supplying O ₃ . For 2 seconds (Comparative Example 2)
Alternatively, the time of the O ₃ water washing was set to 5 seconds (Comparative Example 3). Table 2 shows the results.

[0034]

[Table 2]

[0035] From Table 2, and O ₃ compared not performing washing with water Example 2, and O to ₃ for short Comparative Example 3, the number pit water washing time is large, O ₃ cleaning time with water for more than 10 seconds Then, the number of pits can be reduced,
It has been found that a remarkable reduction can be achieved by setting the time to not less than seconds. This means that approximately 60 seconds after the start of the O ₃ cleaning, almost the entire surface of the epitaxial wafer is covered with the chemical silicon oxide film. According to the measurement by the present inventors, the thickness of the chemical silicon oxide film after 60 seconds is about 1 n.
m. The formation rate of the above-mentioned chemical silicon oxide film largely depends on the device, and is not universal. But,
It is clear that the effect of preventing pit generation can be sufficiently exerted if the thickness is approximately 1 nm.

Although the present invention has been described based on the six embodiments, the present invention is not limited to these embodiments, and the diameter of the epitaxial wafer to be used, the number and time of cleaning, Details, such as the configuration of the manufacturing apparatus, can be appropriately changed, selected, and combined.

[0037]

As is apparent from the above description, according to the method for manufacturing an epitaxial wafer of the present invention, the surface of the silicon epitaxial layer is immediately passivated with the chemical silicon oxide film immediately after the vapor phase growth. Since the metal fine particles are prevented from directly adhering to the surface of the silicon epitaxial layer, pits are not frequently generated in the epitaxial layer even after a cleaning process such as SC1 cleaning in a later step. This leads not only to the improvement of the quality of the silicon epitaxial wafer, but also to an increase in the degree of freedom in the process, such as setting the time until the wafer is sent to the next step.

The chemical silicon oxide film can be formed uniformly and easily by bringing the epitaxial layer into contact with a solution containing an oxidizing agent. This formation does not involve any change in existing semiconductor manufacturing facilities. As the solution, ammonia is used in the so-called SC1 cleaning - can be easily performed by using O ₃ added water used in the hydrogen peroxide mixture or O ₃ water wash. In particular, O ₃ water cleaning can be performed at room temperature, has the advantage that precious metals and organic deposits can be removed at the same time, and the required amount of ultrapure water for rinsing can be greatly reduced.

In a semiconductor manufacturing apparatus for carrying out the manufacturing method of the present invention, a reaction chamber for performing vapor phase growth of a silicon epitaxial layer and a post-processing chamber for forming a chemical silicon oxide film are provided. It is preferable to adopt a configuration in which the epitaxial layers are connected to each other by a transport path, so that a clean epitaxial layer surface can be immediately passivated. The post-processing chamber can use an existing apparatus that can appropriately combine the above-described O ₃ water cleaning and SC1 cleaning, and the capital investment can be minimized.

[Brief description of the drawings]

FIG. 1 is a view showing a basic process flow of epitaxial wafer production employing an epitaxial wafer production method of the present invention.

FIG. 2 is a schematic diagram showing one configuration example of a semiconductor manufacturing apparatus of the present invention in which an epitaxial reaction chamber and a post-processing chamber are arranged in-line via a transfer path.

FIG. 3 is a schematic diagram showing another configuration example of the semiconductor manufacturing apparatus of the present invention in which an epitaxial reaction chamber, a post-processing chamber, and a load lock chamber are connected to one transfer path.

FIG. 4 is a diagram showing a basic process flow of a conventional epitaxial wafer manufacturing.

[Explanation of symbols]

 S: Silicon single crystal substrate E: Silicon epitaxial layer M: Metal fine particles C: Chemical silicon oxide film EPW: Epitaxial wafer 1: Reaction chamber 2: Post-processing chamber 3a, 3b, 3c, 3d: Conveying paths 4a, 4b, 4c , 4d ... handler 5 ... gate valve

Claims (6)

[Claims] A chemical silicon oxide film is formed on the surface of a silicon epitaxial layer immediately after a silicon epitaxial layer is vapor-phase grown on a silicon single crystal substrate to obtain an epitaxial wafer. A method for producing an epitaxial wafer, which is sent to the next step. 2. The method of manufacturing an epitaxial wafer according to claim 1, wherein the chemical silicon oxide film is formed by bringing the silicon epitaxial layer into contact with a solution containing an oxidizing agent. 3. The method for producing an epitaxial wafer according to claim 2, wherein an ammonia-hydrogen peroxide mixed solution is used as said solution. 4. The method for cleaning an epitaxial wafer according to claim 2, wherein ozone added water is used as said solution. 5. A reaction chamber for vapor-phase growing an epitaxial layer on a silicon single crystal substrate; a post-processing chamber for forming a chemical silicon oxide film on a surface of the epitaxial layer; A semiconductor manufacturing apparatus, comprising: a transfer path interconnecting a post-processing chamber; and a transfer path including transfer means for transferring a silicon epitaxial wafer. 6. The semiconductor manufacturing apparatus according to claim 5, wherein the post-processing chamber includes a solution supply unit that supplies a solution containing an oxidizing agent to a surface of the epitaxial layer.