JPH11329100A - Compact power cable - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact power cable having an external semiconductor layer which can be easily stripped from an insulating material by using a specialized tool when processing a terminal of the external semiconductor layer of bundled cores or a single core cable, and requiring no glass cutter or sand paper cutter. SOLUTION: This compact CV cable is structured by bundling plural cores 18 in each of which an internal semiconductor layer 10, an insulating material 14, an external semiconductor layer 16 and a shield 17 comprising a copper tape are provided in this order on the outer periphery of a center conductor 10, the internal semiconductor layer 12, the insulating layer 14 and the external semiconductor layer 16 in each core 18 are formed by simultaneously extruding the three layers, and the external semiconductor layer 16 is formed into a free stripping shape. A specialized tool 22 is to cut plural notches 24 in the external semiconductor layer 16 along the periphery of the core 18 of the compact CV cable and the longitudinal direction of the cable with a cutting blade 22 pierced into the semiconductor layer 16 for a fixed depth.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a compact type CV cable in which a plurality of compact type power cables, for example, a crosslinked polyethylene insulated power cable are bundled as a core or a single core cable, and in particular, an external semiconductive cable which is used for intermediate connection and terminal assembly. The present invention relates to a compact power cable capable of shortening the time required for layer terminal processing and improving the working environment.

[0002]

2. Description of the Related Art A conventional compact CV cable has a structure shown in FIGS. 5 and 6, for example. The figure is an axial cross-sectional view, and FIG. 6 is a configuration diagram in which each layer is removed stepwise.
The compact CV cable of FIG. 5 is a power cable in which three cores a are tightly bundled without gaps. Also,
There is also a triplex cable in which three single-core cables are bundled. Each of the cores a has a conductor b formed by bundling a plurality of element wires at the center thereof so that an axial cross section thereof has a substantially sector shape. An inner semiconductive layer c and an insulator d and an external semiconductive layer e are sequentially provided. Each of the cores a has a substantially sector shape similar to a conductor. A shield f or the like made of copper tape is provided on the outer periphery of the outer semiconductive layer e, and the outside is surrounded and protected by a sheath g in a state where three cores a are bundled. In a triplex type cable, a plurality of single-core cables are bundled. In this case, the inner semiconductive layer c, the insulator d and the outer semiconductive layer e are formed by extruding three layers simultaneously,
Further, it is of a bond type in which the insulator d and the external semiconductive layer e are thermally fused.

[0003]

By the way, in the above-mentioned conventional compact CV cable, when the intermediate connection and the terminal assembly are performed, the terminal treatment of the external semiconductive layer e is required. This terminal treatment requires that the outer semiconductive layer e be ground and sanded. These glass shaving and sandpaper shaving operations require a high level of technology and require a long working time. Furthermore, there is a problem that the working environment may be deteriorated due to shavings during sandpaper shaving. Conventional cross-section circular cable, for example, JP-A-8-129913,
In JP-A-8-129914, uniform workability is achieved when the outer glass is ground. However, especially in the case of a compact type power cable, the workability is different between a place where the radius is large and a place where the radius is small, and it is very difficult to cut it particularly in a place where the radius is large (a flat place). For this reason, variations are likely to occur, and further skill of the operator is required.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and is intended to solve the above-mentioned problems by using a special tool for terminating an outer semiconductive layer of a bundled core or a single-core cable. An object of the present invention is to provide a compact power cable that can easily peel off an outer semiconductive layer and does not require glass or sandpaper.

[0005]

The present invention has the following structure to solve the above-mentioned problems. The invention of claim 1 is
In a compact power cable in which a plurality of cores each having an inner semiconductive layer, an insulator, and an outer semiconductive layer sequentially provided on the outer periphery of a center conductor are bundled and covered with an outer cover, the inner semiconductive A compact power cable characterized in that a layer, an insulator, and an outer semiconductive layer are formed by simultaneous extrusion of three layers, and the outer semiconductive layer is formed in a free stripping form. Further, the invention according to claim 2 is characterized in that an inner semiconductive layer, an insulator,
In a compact power cable in which a plurality of single-core cables each provided with an outer semiconductive layer in sequence and covered with a jacket are bundled,
A compact electric power, wherein the inner semiconductive layer, the insulator and the outer semiconductive layer of each single-core cable are formed by simultaneously extruding three layers, and the outer semiconductive layer is formed in a free stripping type. Cable.

According to the present invention, in a compact type power cable, three inner semiconductive layers, insulators, and outer semiconductive layers of each core or each single core cable are formed by simultaneous extrusion, and the outer semiconductive layer is formed. Since the layers are formed in a free stripping form, in each core or each single-core cable, the external semiconductive layer can be easily stripped from the insulator by using a dedicated stripping tool. Therefore, the external semiconductive layer can be easily removed without the necessity of shaving glass and sandpaper.

[0007]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view of a compact CV cable 8 according to an embodiment of the present invention, and FIG.
FIG. 3 is an explanatory view of an example of processing of the outer semiconductive layer 16 of the core 18 of the cable 8 by the dedicated tool 22 for stripping, and FIG.

As shown in FIG. 1, the compact type CV
The cable has an inner semiconductive layer 1
2, an insulator 14, an outer semiconductive layer 16, and a shield 17 made of copper tape. Inner semiconductive layer 12, insulator 1
4 and the external semiconductive layer 16 are formed by simultaneous extrusion of three layers, and the external semiconductive layer 16 is formed in a free stripping type (free stripping type). The conductor 10 is formed by bundling a plurality of strands and forming a substantially fan-shaped cross section in the axial direction. The insulator 14 is made of cross-linked polyethylene. The core 18
Are tightly adhered to each other without any gap when viewed in the axial section. In addition, the outer sheath 20 in which three cores are bundled.
Is an anticorrosion layer.

As shown in FIGS. 2 and 3, the special tool 22 is provided with the cutting edge 22a penetrating the outer semiconductive layer 16 at a constant depth and around the core 18 of the compact type CV cable. A plurality of cuts 24 are made in the outer semiconductive layer 16 along the longitudinal direction of the cable. A cutting edge 22a is fixed to the tip of the main body made of a resin such as plastic on the special tool 22, and the length of the cutting edge 22a protruding from the front end of the main body is set as shown in FIG.
A cut is made only in the outer semiconductive layer 16 so that the insulator 14 is not damaged.

In the CV cable of the embodiment, when the intermediate connection and the terminal assembly are performed, the terminal treatment of the outer semiconductive layer 16 of each core 18 is necessary. In the terminal treatment, the sheath 20 is removed in advance. The core 18 is separated, and the shield 17 of the core 18 is removed to expose the outer semiconductive layer 16.

Next, a cut 24 is made in the exposed semiconductive layer 16 by using a stripping tool 22 shown in FIGS. 2A and 2B on the exposed core 18 of the external semiconductive layer 16. . As shown in FIG. 3, the cuts 24 are formed by peeling the outer semiconductive layer 16 from the tip of the core 18.
A plurality of grooves (indicated by reference numeral 24a) are linearly inserted along the axial direction of the core 18 over the area 6, and at the peeling end 26, an annular shape (reference numeral 2) which makes a round at the same position in the axial direction of the core 18
4b).

Next, by pulling the outer semiconductive layer 16 (16a) at the tip of the core 18 by pinching or the like, first, one strip-shaped outer semiconductive layer 16 is cut into 2 notches.
Strip along 4 Then, the remaining external semiconductive layer 16
(16b) is peeled off by opening to expose the outer surface of the insulator 14.

In the above embodiment, a compact power cable having three cores 18 is shown. However, the present invention is not limited to this type of power cable, and three power cables are used as in another embodiment shown in FIG. Obviously, the single-core cable 30 can be similarly applied to a stranded triplex power cable. In the case of a triplex type power cable, each single-core cable has an external half-conductor cable except that a copper tape shielding layer 32 and a PVC (polyvinyl chloroprene) sheath 34 are laminated on the outer periphery of the external semiconductive layer 16. The common point is that the conductive layer 16 is of a free stripping type and can have the same configuration from the conductor 10 to the external semiconductive layer 16, and the common portions are denoted by the same reference numerals and description thereof is omitted.

The compact type CV cable of the present invention is not limited to the number of cores or each single-core cable being three, but includes two or four or more cables.

[0015]

As described above, according to the present invention,
During the termination of the outer semiconductive layer of the core or single core cable in the intermediate connection and termination assembly of the compact power cable, the outer semiconductive layer can be easily peeled from the insulator by using a special tool for stripping. It does, and does not require glass or sandpaper sharpening. In other words, the conventional circular cable has uniform workability when cutting the outer glass. However, in the case of a compact power cable, the workability differs between a place where the R is large and a place where the R is small. It is very difficult to cut on (a flat place). For this reason, variation is likely to occur and requires more skill of the worker. However, in the present invention, by making the compact type power cable a free stripping type, anyone can easily work, and there is no variation in finish. . As a result, in the terminal treatment operation, only the outer semiconductive layer is peeled off and the insulator is not shaved, so that the possibility of adversely affecting the electrical characteristics is surely eliminated. In addition, in the terminal processing operation, since the external semiconductive layer can be easily and reliably peeled off, there is no need for a high skill of an operator. Further, in the terminal work, since sandpaper shaving is not required, shavings due to sandpaper shaving do not appear, and the working environment does not deteriorate.

[Brief description of the drawings]

FIG. 1 shows a compact CV according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of the cable at right angles to the axis.

FIG. 2 is an example showing a state in which an external semiconductive layer of a core of the CV cable of FIG. 1 is peeled off with a special tool.

FIG. 3 is an explanatory view of an example of peeling off an outer semiconductive layer of the CV cable of FIG. 1;

FIG. 4 is a cross-sectional view at right angles to the axis of a compact CV cable according to another embodiment.

FIG. 5 is a sectional view taken along a direction perpendicular to the axis of a conventional compact CV cable.

FIG. 6 is a configuration explanatory view of a conventional compact CV cable in which components other than conductors have been removed.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Conductor of core 12 Inner semiconductive layer 14 Insulator 16 Outer semiconductive layer 17 Shield 18 Core 20 Sheath 22 Stripping tool 24 Cut 24a, 24b Cut in the longitudinal direction of the cable, annular cut 26 Stripped end 30 Single core cable

Claims (2)

[Claims] 1. An inner semiconductive layer on the outer periphery of a central conductor,
In a compact power cable in which a plurality of cores each formed by sequentially providing an insulator and an outer semiconductive layer are covered with a jacket, the inner semiconductive layer, the insulator, and the outer semiconductive layer of each core are A compact power cable formed by simultaneously extruding three layers and the outer semiconductive layer is formed in a free stripping form. 2. An inner semiconductive layer on the outer periphery of the center conductor,
In a compact power cable in which an insulator and an outer semiconductive layer are sequentially provided and a plurality of single core cables covered with a jacket are bundled, an inner semiconductive layer, an insulator, and an outer semiconductive layer of each single core cable are provided. Are formed by simultaneous extrusion of three layers,
A compact power cable, wherein the outer semiconductive layer is formed in a free stripping form.