JPH1131646A - Method and apparatus for peripheral exposure - Google Patents
Method and apparatus for peripheral exposureInfo
- Publication number
- JPH1131646A JPH1131646A JP9185558A JP18555897A JPH1131646A JP H1131646 A JPH1131646 A JP H1131646A JP 9185558 A JP9185558 A JP 9185558A JP 18555897 A JP18555897 A JP 18555897A JP H1131646 A JPH1131646 A JP H1131646A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- light
- transmitting member
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ウエハ上のレジス
トを露光する露光方法及び周辺露光装置に関するもので
ある。[0001] 1. Field of the Invention [0002] The present invention relates to an exposure method for exposing a resist on a wafer and a peripheral exposure apparatus.
【0002】[0002]
【従来の技術】半導体装置は、ステップアンドリピート
方式等の露光装置によるレジストのパターニングと前記
パターンをマスクにエッチング作業等が行われる。通
常、この作業に供されるウエハは、エッチング作業等の
ウエハプロセス時にウエハを把持する部分、即ち、ウエ
ハのエッジ部分からレジストの屑や塵が発生しないよう
に、レジストパターン露光作業の前後どちらかにウエハ
エッジ部に相当する部分が所定露光量露光され、レジス
トが除去される。2. Description of the Related Art In a semiconductor device, a resist is patterned by an exposure apparatus such as a step-and-repeat method, and an etching operation or the like is performed using the pattern as a mask. Normally, the wafer to be used for this operation is placed either before or after the resist pattern exposure operation so that resist debris and dust are not generated from a portion that holds the wafer during a wafer process such as an etching operation, that is, an edge portion of the wafer. Then, a portion corresponding to the wafer edge portion is exposed to a predetermined exposure amount, and the resist is removed.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、このウ
エハエッジ部の露光において、レジストの光反応によっ
て発生した反応ガスが原因となってレジストが発泡し、
その結果、その近辺及び他の領域にレジスト発泡物を付
着させ、パターン欠陥を引起こし半導体装置の歩留まり
を低下させるという問題点を生じていた。However, in the exposure of the wafer edge, the resist gas bubbles due to the reaction gas generated by the photoreaction of the resist,
As a result, a problem arises in that a resist foam is attached to the vicinity thereof and other regions to cause a pattern defect and lower the yield of the semiconductor device.
【0004】この発明は上記のような問題点を解消する
ためになされたもので、ステップアンドリピート方式等
の露光装置によるレジストのパターニング前後に行われ
る周辺露光において、露光されたウエハエッジ部のレジ
ストの発泡を抑制できる周辺露光方法及び装置を得るこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. In a peripheral exposure performed before and after patterning of a resist by an exposure apparatus such as a step-and-repeat method, a resist at an exposed wafer edge portion is exposed. It is an object of the present invention to obtain a peripheral exposure method and apparatus capable of suppressing foaming.
【0005】[0005]
【課題を解決するための手段】請求項1記載の露光方法
は、ウエハの上面に成膜されたレジストのウエハエッジ
に相当する部分を所定の露光量にて露光する周辺露光に
おいて、光を遮蔽しない部材でウエハエッジに相当する
部分を覆い、上記部材を具備した状態で露光することを
特徴とする露光方法である。According to a first aspect of the present invention, there is provided an exposure method which does not block light in a peripheral exposure for exposing a portion corresponding to a wafer edge of a resist formed on an upper surface of a wafer with a predetermined exposure amount. An exposure method comprising covering a portion corresponding to a wafer edge with a member, and performing exposure with the member provided.
【0006】請求項2記載の露光装置は、ウエハの上面
に成膜されたレジストのウエハエッジに相当する部分を
所定の露光量にて露光する周辺露光装置において、光を
遮蔽しない部材でウエハエッジに相当する部分を覆い、
上記部材を具備した状態で露光することを特徴とする露
光装置である。According to a second aspect of the present invention, there is provided a peripheral exposure apparatus for exposing a portion corresponding to a wafer edge of a resist film formed on an upper surface of a wafer with a predetermined exposure amount, wherein a member which does not block light corresponds to the wafer edge. Cover the part to be
An exposure apparatus is characterized in that exposure is performed with the above members provided.
【0007】[0007]
【作用】この発明においては、光を遮蔽しない部材でウ
エハエッジに相当する部分を覆い、上記部材を具備した
状態で露光するため、発泡によるレジスト屑や破片がウ
エハエッジ近辺及び他の領域に付着することを抑えるこ
とができる。According to the present invention, since the portion corresponding to the wafer edge is covered with a member that does not block light, and exposure is performed with the above member provided, resist dust and debris due to foaming adhere to the vicinity of the wafer edge and other regions. Can be suppressed.
【0008】[0008]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0009】図1は、この発明の一実施例による周辺露
光装置の露光時の状態を摸式的に示した図であり、図1
(a)はその断面図、図1(b)はその上面図である。
図において、ウエハチャック1に吸着されたウエハ2が
光透過部材3で覆われ、上部に光源4が配置されてい
る。FIG. 1 is a diagram schematically showing a state of an edge exposure apparatus according to an embodiment of the present invention at the time of exposure.
1A is a cross-sectional view thereof, and FIG. 1B is a top view thereof.
In the figure, a wafer 2 adsorbed on a wafer chuck 1 is covered with a light transmitting member 3, and a light source 4 is disposed on an upper portion.
【0010】以下動作を説明する。レジストが塗布され
たウエハ2が図1に示す露光ユニットのウエハチャック
上に搬送され、チャッキング後光透過部材3でウエハエ
ッジ部を覆う。この後、ウエハチャック軸5を中心にウ
エハが回転し、光源4からの光が光透過部材3を透過し
ウエハ外周部を露光する。この時、レジストの発泡現象
が光透過部材3の直下で発生しても、光透過部材3がレ
ジスト膜面上にあるため、発泡によるレジスト屑や破片
が飛び散ることがなくウエハエッジ近辺及び他の領域に
レジスト屑や破片が付着することを抑えることができ
る。尚、上記実施例では、レジスト屑や破片の飛び散り
を制御する光透過部材3がウエハ2に接触しウエハ2と
ともに回転しているが、光透過部材3は、ウエハ2と接
触している必要はなくレジスト屑や破片の飛散を制御で
きる間隔がウエハ2と保たれていればよく、また、ウエ
ハ2と共に回転する必要もない。The operation will be described below. The wafer 2 coated with the resist is transported onto the wafer chuck of the exposure unit shown in FIG. 1, and after chucking, the light transmitting member 3 covers the wafer edge. Thereafter, the wafer rotates about the wafer chuck shaft 5, and the light from the light source 4 passes through the light transmitting member 3 to expose the outer peripheral portion of the wafer. At this time, even if the resist bubbling phenomenon occurs immediately below the light transmitting member 3, since the light transmitting member 3 is on the resist film surface, the resist dust and debris due to the foaming do not scatter and the vicinity of the wafer edge and other areas. It is possible to suppress the adhesion of resist dust and fragments to the surface. In the above embodiment, the light transmitting member 3 for controlling the scattering of resist dust and fragments is in contact with the wafer 2 and rotates together with the wafer 2, but the light transmitting member 3 does not need to be in contact with the wafer 2. It is only necessary that the space for controlling the scattering of resist dust and debris be kept with the wafer 2, and there is no need to rotate with the wafer 2.
【0011】[0011]
【発明の効果】以上のように、この発明によれば、周辺
露光が行われる間、レジスト膜面上に光透過部材を設け
てあるため、レジストが発泡しても、レジスト屑や破片
がウエハエッジ近辺及び他の領域に付着することを抑え
ることができ、その結果、レジスト屑や破片が原因で発
生していたパターン欠陥を抑制し半導体装置の製品歩留
まりを低下させない効果がある。As described above, according to the present invention, since the light transmitting member is provided on the resist film surface during the peripheral exposure, even if the resist foams, the resist debris and debris are removed from the wafer edge. Adhesion to the vicinity and other regions can be suppressed, and as a result, there is an effect that pattern defects generated due to resist dust and fragments are suppressed and the product yield of semiconductor devices is not reduced.
【図1】この発明の一実施例による周辺露光装置の露光
ユニットにウエハが載置され露光される状態を摸式的に
示した図である。FIG. 1 is a diagram schematically showing a state in which a wafer is placed on an exposure unit of a peripheral exposure apparatus according to an embodiment of the present invention and exposed.
1 ウエハチャック 2 ウエハ 3 光透過部材 4 光源 5 ウエハチャック軸 DESCRIPTION OF SYMBOLS 1 Wafer chuck 2 Wafer 3 Light transmission member 4 Light source 5 Wafer chuck shaft
Claims (2)
ハエッジに相当する部分を所定の露光量にて露光する周
辺露光において、光を遮蔽しない部材でウエハエッジに
相当する部分を覆い、上記部材を具備した状態で露光す
ることを特徴とする露光方法。In a peripheral exposure for exposing a portion corresponding to a wafer edge of a resist formed on an upper surface of a wafer with a predetermined exposure amount, a portion corresponding to the wafer edge is covered with a member that does not block light, and An exposure method, wherein exposure is performed in a state where the exposure apparatus is provided.
ハエッジに相当する部分を所定の露光量にて露光する周
辺露光装置において、ウェハエッジを覆いかつ光を遮蔽
しない部材を具備することを特徴とする露光装置。2. A peripheral exposure apparatus for exposing a portion corresponding to a wafer edge of a resist formed on an upper surface of a wafer with a predetermined exposure amount, comprising a member that covers the wafer edge and does not block light. Exposure equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9185558A JPH1131646A (en) | 1997-07-10 | 1997-07-10 | Method and apparatus for peripheral exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9185558A JPH1131646A (en) | 1997-07-10 | 1997-07-10 | Method and apparatus for peripheral exposure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1131646A true JPH1131646A (en) | 1999-02-02 |
Family
ID=16172919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9185558A Withdrawn JPH1131646A (en) | 1997-07-10 | 1997-07-10 | Method and apparatus for peripheral exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1131646A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100724623B1 (en) * | 2000-12-22 | 2007-06-04 | 주식회사 하이닉스반도체 | Wafer edge exposure in exposing apparatus |
JP2011081156A (en) * | 2009-10-07 | 2011-04-21 | Orc Manufacturing Co Ltd | Exposure apparatus |
-
1997
- 1997-07-10 JP JP9185558A patent/JPH1131646A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100724623B1 (en) * | 2000-12-22 | 2007-06-04 | 주식회사 하이닉스반도체 | Wafer edge exposure in exposing apparatus |
JP2011081156A (en) * | 2009-10-07 | 2011-04-21 | Orc Manufacturing Co Ltd | Exposure apparatus |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20041005 |