JPH11312656A - Method and device for cutting substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cutting method and a device having high dimensional accuracy, without position deviation and the chipping of a substrate, during and after processing. SOLUTION: When a nonmetallic-material substrate 6 is cut and many pieces of chips are obtained, the substrate 6 is held on a stage 10 having a moving mechanism in at least one-axial direction through vacuum chucking. Furthermore, at least two parts of the end parts of the substrate 6 are fixed with substrate fixing stoppers 15-1 to 15-4. Thus, gaps are not formed at cutting lines 11-1 to 11-5 formed on the substrate 6. Even if the cutting lines 11-1 to 11-4 and the cutting line 11-5 are made to cross at a right angle, the positional deviation of the substrate 6 does not occur. As a result, chipping is not generated, and the chip having the high dimensional accuracy can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for cutting a substrate.

[0002]

2. Description of the Related Art A technique of cutting a non-metallic material substrate such as ceramics, glass or semiconductor into a square chip having a size of several mm to several tens mm with high dimensional accuracy has been regarded as important. As this kind of cutting method, a dicing method or a method of applying a stress and then applying a stress after scribing with a scriber has been used.

In recent years, a substrate surface is irradiated with a CO ₂ laser beam to generate a crack due to thermal stress.
A method of cleaving the substrate by progressing along the irradiation locus of the O ₂ laser beam is also being studied.

Further, a continuous scoring line is formed on one or both surfaces of the glass, and a laser beam is irradiated on the scoring line to cut the glass (Japanese Patent Laid-Open No. 3-258476). A cutting groove is partially formed in the outer peripheral portion of the plate body, and the cutting body partially starting from the cutting groove is moved while the cutting heating body is moved along the target cutting line starting from this groove. In the cutting method to be advanced, a method in which fine processing grooves are formed in advance on the surface of the plate by a diamond tool or injection processing (Japanese Patent Laid-Open No. 22167/1993)
No. 3) is disclosed.

Therefore, the present inventor studied the division of the substrate using the CO ₂ laser beam using the apparatus shown in FIG. FIG. 5 is a conceptual diagram of a substrate cutting device on which the present invention is based.

[0006] The cutting apparatus proceeds from CO ₂ laser device 1 horizontally CO ₂ laser light (parallel light) 2 is incident vertically by the total reflection mirror 3, the condenser of the CO ₂ laser beam by the condenser lens 4 To be processed (hereinafter referred to as “substrate”) 6
To be irradiated. The substrate 6 is placed on a vacuum suction stage 80 on an XYθ stage 100, and is evacuated by a vacuum exhaust device 9 through a vacuum suction hole 7 to be vacuum-sucked on the vacuum suction stage 80.

The substrate 6 is divided into chips by moving the XYθ stage 100 in the X, Y, and θ directions by a motor drive unit (not shown). When dividing the substrate 6 into chips, arrows along the irradiation direction of the C0 ₂ laser beam 5-1
And the assist gas (N ₂ , Ar, O ₂ , air, etc.) is blown in the 5-2 direction to suppress the occurrence of thermal deformation strain on the analysis surface of the substrate 6.

[0008]

However, the conventional substrate cutting method has the following problems. That is, when the substrate is cut into a lattice shape by a method using the apparatus shown in FIG. 5 to obtain a chip of several mm square to several tens of mm square, the position of the substrate is displaced at the time of cutting, and the substrate has high dimensional accuracy. Could not be divided.

Here, the reason why the substrate cannot be cut with high dimensional accuracy will be described with reference to FIG. FIG. 6 is a plan view of a fixing portion of a substrate used in the apparatus shown in FIG.

[0010] substrate 6 in advance by vacuum suction on the vacuum suction stage 80, the substrate 6 cutting lines by C0 ₂ laser radiation 1
When cutting is performed at 1-1, 11-2, 11-3, 11-4, and 11-5, and then a cutting line 11-6 is formed in a lattice shape, cutting lines 11-5, 11-4, 11-3, 1
Each intersection 12-1, 12-2, 1 with 1-2, 11-1
It was found that cutting was performed with uneven displacement occurring in 2-3, 12-4, and 12-5.

That is, the cutting lines 11-1 to 11-
5, the substrate 6 forms cutting lines 11-1 to 11-5 even though the substrate 6 is vacuum-sucked on the vacuum suction stage 80 by the plurality of vacuum suction holes 7 As a result, a gap of several tens of μm to 300 μm was formed between each of the divided substrate pieces. The degree of this gap depends on the vacuum suction force and the assist gas 5
-1, 5-2 depending on the gas pressure and the like. When the cutting lines 11-6 are formed in a state where such gaps are formed, the intersections 12-1 to 12-5 of the respective cutting lines are non-uniformly shifted (not orthogonal cutting lines but non-orthogonal cutting lines). (Cutting line) occurs, and a square (or rectangular) chip cannot be obtained.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to provide a high-dimensional accuracy cutting method and apparatus which do not cause displacement or chipping of a substrate during or after processing.

[0013]

In order to achieve the above object, a method of dividing a substrate according to the present invention is directed to a method of dividing a substrate for dividing a nonmetallic material substrate to obtain a large number of chips. The substrate is held on a stage having a moving mechanism by vacuum suction, and at least two ends of the substrate are fixed with a substrate fixing stopper, and the stage is moved while irradiating the substrate with CO ₂ laser light. Then, the substrate is divided.

In addition to the above structure, the method for dividing a substrate according to the present invention is a method for mounting a substrate on a stage having a magnetic film formed on a surface thereof, and a stopper for fixing the substrate formed of a metal material adsorbed on the magnetic film. After fixing the substrate with, the substrate may be divided.

In addition to the above structure, the method for dividing a substrate according to the present invention comprises placing the substrate on a stage made of a metal material adsorbed on a magnetic material, and holding the substrate with a substrate fixing stopper made of a magnetic material. After fixing, the substrate may be cut.

In addition to the above configuration, the substrate cutting method of the present invention may use at least a part of the substrate fixing stopper as a reference surface for fixing the substrate.

In addition to the above configuration, in the method of cutting a substrate according to the present invention, a score line may be formed on the substrate and a CO ₂ laser beam may be irradiated along the score line.

The substrate cutting device of the present invention is a substrate cutting device for cutting a non-metallic material substrate to obtain a large number of chips, comprising: a stage having a moving mechanism in at least one axial direction; A holding mechanism for holding a vacuum suction mechanism, a fixing mechanism for fixing at least two portions of the end portion of the substrate with a stopper for fixing the substrate, and a guide mechanism for guiding the CO ₂ laser light emitted from the CO ₂ laser device onto the substrate. It is provided.

In addition to the above construction, a stage having a magnetic film formed on its surface is used for the stage of the substrate cutting apparatus of the present invention, and a metal material adsorbed on the magnetic film is used for the substrate fixing stopper. You may.

In addition to the above configuration, a stopper made of a magnetic material is used for the fixing stopper of the substrate cutting apparatus of the present invention, and a stage made of a metal material adsorbed on the magnetic material is used for the stage. You may.

In addition to the above configuration, at least a part of the substrate fixing stopper of the substrate cutting apparatus of the present invention may have a mechanism as a reference surface of a fixing position of the substrate.

In addition to the above structure, the substrate cutting apparatus of the present invention comprises a score line forming mechanism for forming a score line on the substrate;
A tracking mechanism for tracking so as to irradiate the CO ₂ laser beam along the score line.

According to the present invention, by holding a substrate by vacuum suction on a stage having a moving mechanism in at least one axial direction, and fixing at least two end portions of the substrate by a substrate fixing stopper, A gap is not generated in the cutting line formed on the substrate, and the displacement of the substrate is eliminated even if the cutting lines are made orthogonal. As a result, processing with high dimensional accuracy can be performed without chipping of the substrate.

[0024]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1A is a plan view of a substrate fixing portion used in an apparatus to which the substrate cutting method of the present invention is applied.
FIG. 1B is a side view of FIG.

A substrate 6 to be processed by irradiation with a CO ₂ laser beam is disposed on an XYθ stage (which may be an XY stage or a Yθ stage) 10. The substrate 6
The XYθ stage 10 is sucked and held on the XYθ stage 10 by evacuating the XYθ stage 10 through the vacuum suction holes 7 formed in the XYθ stage 10. CO ₂ laser irradiation (not shown) assist gas 5-1 and 5-2 CO ₂ laser cutting line by spraying (see FIG. 5) 11-1 when
For example, substantially L-shaped substrate fixing stoppers 15-1 to 15-15 are provided at the four corners of the substrate 6 so that no gap is generated in the substrates 11 to 11-6.
-4 is provided.

Substrate fixing stoppers 15-1 to 15-4
Are fixed on the XYθ stage 10. XYθ stage 10 of substrate fixing stoppers 15-1 to 15-4
The following method can be used as the fixing method on the upper side.

As a first method, a magnetic film is formed on the surface 13 of the XYθ stage 10, and the substrate fixing stoppers 15-1 to 15-4 are made of a metal material (iron, steel, etc.) adsorbed on the magnetic film. And a method of holding the substrate 6 by magnetic force.

As a second method, the substrate fixing stoppers 15-1 to 15-4 are formed of a magnetic material, the surface 13 or the whole of the XYθ stage 10 is formed of a ferromagnetic material, and the substrate 6 is held by magnetic force. Method.

As a third method, the substrate fixing stoppers 15-1 to 15-4 are attached to the surface 13 of the XYθ stage 10.
Mechanical methods such as fixing with a screw or making it slidable so that it can be locked.

By the first to third methods, the substrate 6 and the X
The stage 6 is double-fixed to the Yθ stage 10 so that the substrate 6 is cut along the cutting line 11-by CO ₂ laser irradiation.
Even if 1 to 11-5 are formed, no gap is formed in the cutting line of each divided substrate piece. Therefore, the cutting lines 11-1 to 11-1
Even if the cutting 11-6 is formed orthogonal to 11-5, the intersections 12-1 to 12-5 with the respective cutting lines are formed with the cutting lines orthogonal to each other, and a square chip can be obtained. .

The substrate fixing stoppers 15-1 to 15-1
5-4, the substrate fixing stopper 15-3, the substrate fixing stopper 15-4, and the substrate fixing stopper 15-
1 and the substrate fixing stopper 15-2 can be used as reference planes in the X direction.
And the substrate fixing stopper 15-4, the substrate fixing stopper 15-2, and the substrate fixing stopper 15-3 can be used as a Y-direction reference plane, so that the substrate 6 is accurately divided into quadrangles in the X and Y directions. can do.

FIG. 2A is a plan view of a fixing portion for fixing a substrate when a substrate used in an apparatus to which the method for dividing a substrate of the present invention is applied is circular, and FIG. (A)
FIG.

This type of substrate 6a is often used for a semiconductor substrate such as a GaAs substrate or a Si substrate. In such a case, the outer peripheral portion of the substrate 6a is formed by using four substrate fixing stoppers 15-1 to 15-4. By suppressing the displacement, the displacement of the substrate 6a during processing can be surely suppressed, and processing with high dimensional accuracy can be performed.

[0035]

FIG. 3 is a conceptual diagram showing an embodiment of an apparatus to which the method for dividing a substrate according to the present invention is applied.

This apparatus uses the XYθ stage 10
Held by vacuum suction on (see FIG. 1), and, while fixed on the XYθ stage 10 doubly board fixing stopper 15-1 to 15-4, irradiating a CO ₂ laser beam 2-3 crack is generated in the substrate 6 by, it is to divide by develop cracks by tracking movement of the CO ₂ laser beam 2-3 along the crack.

In this embodiment, a CO ₂ laser beam 2-1 from a CO ₂ laser device (not shown) is reflected downward by a total reflection mirror 3, and the reflected laser beam 2-2 is collected by a condenser lens 4. And guides the focused laser beam 2-3 to the surface of the substrate 6 and moves the CO ₂ laser beam 2-3 in the direction of arrow 21 by a moving mechanism (not shown). , Cracks 20-1, 20-2, 20-
3, 20-4 can be formed.

The cracks 20-1 to 20-4 correspond to the crack 2
After forming 0-1, a second crack 20-2 is formed by moving the XYθ stage (see FIG. 1) 10 on which the substrate 6 is placed in the Y direction (the direction of arrow 19), and the same operation is performed. Are repeated to form cracks 20-3 and 20-4. Alternatively, cracks may be formed in the substrate 6 by fixing the irradiation position of the CO ₂ laser beam 2-3 and moving the XYθ stage 10 on which the substrate 6 is mounted in the direction of the arrow 22.

FIG. 4 is a conceptual diagram showing another embodiment of the apparatus to which the method for dividing a substrate according to the present invention is applied.

This apparatus forms a scribe line on the substrate 6 by moving the diamond cutter 14 in the direction of the arrow 16, irradiates the CO ₂ laser beam 2-3 along the scribe line, and simultaneously draws the arrow. A crack is generated by moving the substrate 6 in the direction of the arrow 21 in the same direction as the direction 16, and the substrate 6 is divided by growing the crack.

When a score line is formed on the substrate 6 by the diamond cutter 14, it is necessary to press the diamond cutter 14 against the surface of the substrate 6 by applying pressure in the direction of arrow 16 and rotate the diamond cutter 14 in the direction of arrow 17. The displacement of the substrate 6 easily occurs due to the pressure.

Therefore, the fixing stoppers 15-1 to 15-15
By using together the method of fixing the substrate 6 at -4,
The displacement can be prevented, and as a result, a quadrangular chip having four right corners can be obtained. Further, a smooth fracture surface can be realized without chipping at four corners.

As described above, according to the present invention, (1) there is no displacement of the substrate during or after processing the substrate.

(2) When a large number of square chips are obtained by dividing the substrate, no gap is generated in the divided portions.
It is possible to obtain a quadrangular chip in which the corners of the chip are kept at a right angle, free of chipping, and having very few irregularities in the cross section.

(3) Since the fixing stopper can be used as a reference plane on the X-plane, the Y-plane or on both sides thereof, it is possible to perform a high-dimensional precision cutting process.

(4) Since the number of vacuum suction holes can be reduced, the surface flatness of the stage can be improved. As a result, a substrate cutting process with higher dimensional accuracy can be performed.

(5) A method of irradiating a CO ₂ laser beam onto a substrate to generate cracks, propagate the cracks along the movement trajectory of the CO ₂ laser beam, and divide the substrate by a cleaving action Although it is possible to divide the cutting margin width to be approximately “0”, when a single substrate is divided into a lattice shape to obtain a large number of chips, a gap is gradually generated in the fractured surface. These gaps had an adverse effect, and the intersections were unevenly divided when divided in a lattice. However, in the method of the present invention, since such a gap does not occur, a square chip having a right-angled corner can be obtained.

(6) A scribe line is formed on the substrate surface in advance using a diamond or a carbide cutter, and C is formed along the scribe line.
In the method of irradiating the O ₂ laser beam, pressure is applied to the substrate surface when forming the scored line, so that a displacement of the substrate occurs,
Although it was difficult to divide with high dimensional accuracy, the method of the present invention can also perform dimensional accuracy with a method using such a cutter in combination.

[0049]

In summary, according to the present invention, the following excellent effects are exhibited.

The substrate is held by vacuum suction on a stage having a moving mechanism in at least one axial direction, and at least two end portions of the substrate are fixed with a substrate fixing stopper, and the substrate is irradiated with CO ₂ laser light. By moving the stage and dividing the substrate while moving the substrate, it is possible to provide a high-dimensional accuracy dividing method and an apparatus therefor which are free from displacement or chipping of the substrate during or after processing.

[Brief description of the drawings]

FIG. 1A is a plan view of a fixing portion of a substrate used in an apparatus to which the substrate cutting method of the present invention is applied, and FIG. 1B is a side view of FIG.

FIG. 2A is a plan view of a fixing portion for fixing a substrate in a case where a substrate used in an apparatus to which the method for dividing a substrate of the present invention is applied has a circular shape, and FIG. 2B is a side view of FIG. FIG.

FIG. 3 is a conceptual diagram showing one embodiment of an apparatus to which the substrate cutting method of the present invention is applied.

FIG. 4 is a conceptual diagram showing another embodiment of an apparatus to which the substrate cutting method of the present invention is applied.

FIG. 5 is a conceptual diagram of a substrate cutting device on which the present invention is based.

6 is a plan view of a fixing portion of a substrate used in the device shown in FIG.

[Explanation of symbols]

 6 Non-metallic material substrate (substrate) 7 Vacuum suction hole 10 Stage (XYθ stage) 15-1 to 15-4 Stopper for fixing substrate

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/68 H01L 21/68 P

Claims (10)

[Claims] 1. A method for dividing a non-metallic material substrate to obtain a large number of chips by dividing the non-metallic material substrate, wherein the substrate is held by vacuum suction on a stage having a moving mechanism in at least one axial direction, and Fix at least two ends of the substrate with a substrate fixing stopper,
A method for dividing a substrate, wherein the substrate is divided by moving the stage while irradiating O ₂ laser light. 2. The method according to claim 1, wherein the substrate is placed on a stage having a magnetic film formed on a surface thereof, and the substrate is fixed by a substrate fixing stopper formed of a metal material adsorbed on the magnetic film. The method for dividing a substrate according to claim 1, wherein the substrate is divided. 3. The substrate is placed on a stage made of a metal material adsorbed on a magnetic material, and the substrate is fixed by a substrate fixing stopper made of a magnetic material, and then the substrate is divided. The method for cutting a substrate according to claim 1. 4. The substrate cutting method according to claim 1, wherein at least a part of the substrate fixing stopper is used as a reference surface of a fixing position of the substrate. 5. The substrate cutting method according to claim 1, wherein a score line is formed on the substrate, and a CO ₂ laser beam is irradiated along the score line. 6. A stage dividing apparatus for dividing a nonmetallic material substrate to obtain a large number of chips, a stage having a moving mechanism in at least one axial direction, and a vacuum suction mechanism holding the substrate on the stage. A fixing mechanism for fixing at least two positions of the end of the substrate with a stopper for fixing the substrate, and a guide mechanism for guiding the CO ₂ laser light emitted from the CO ₂ laser device onto the substrate. A substrate processing apparatus characterized by the above-mentioned. 7. The stage having a magnetic film formed on its surface is used for the stage, and a metal material adsorbed on the magnetic film is used for a substrate fixing stopper.
3. The substrate processing apparatus according to claim 1. 8. The substrate according to claim 6, wherein the fixing stopper is made of a magnetic material, and the stage is made of a metal material adsorbed on the magnetic material. Processing equipment. 9. The substrate processing apparatus according to claim 6, wherein at least a part of the substrate fixing stopper has a mechanism as a reference surface of a fixing position of the substrate. 10. A scoring line forming mechanism for forming a scoring line on the substrate, and a tracking mechanism for tracing the CO ₂ laser beam so as to irradiate the scoring line along the scoring line. A substrate processing apparatus according to the above.