JPH11307871A - Semiconductor laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a semiconductor laser device which exhibits a high radiation property, is low-cost and can perform positioning of light emitting points of an LD(laser diode) chip accurately and easily. SOLUTION: One end of a lead frame 1a is a mounting part 1d in the form of a plate and the other end is an electrode lead 1g. An LD chip 2 is mounted on the surface of the mounting part 1d through a heatsink 3. A resin molded part 4 is formed on the lead frame 1a for sealing the LD chip 2. A transparent cap 5 is fitted on the resin molded part 4 for sealing the LD chip 2. The underside of the mounting part 1d protrudes from the resin molded part 4 and is exposed. The heat generated in the LD chip 2 is dissipated from the underside of the mounting part 1d. Also, one side of the underside of the mounting part 1d is a reference 7 for positioning the light emitting point of the LD chip 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device in which an LD chip is sealed, and more particularly, to a semiconductor laser device in a plastic mold package in which an LD chip is sealed by using plastic or the like.

[0002]

2. Description of the Related Art FIG. 4 is a diagram for explaining a conventional semiconductor laser device. FIG. 4A is a cross-sectional view showing a conventional semiconductor laser device, and FIG.
FIG. 3A is a sectional view taken along line AA ′ of FIG. The semiconductor laser device shown in FIGS. 4A and 4B is packaged using a metal stem. This semiconductor laser device is most commonly used as a single-piece semiconductor laser for CDs and DVDs, and is produced around 10 million units per month worldwide.

In a conventional semiconductor laser device, FIG.
As shown in FIG. 4B, a mounting portion 109a for mounting an LD (laser diode) chip protrudes from the surface of the disk-shaped metal stem 109. The LD chip 102 is mounted on the mounting portion 109a via the heat sink 103. The heat generated in the LD chip 102 is guided to the metal stem 109 via the heat sink 103.

A rod-shaped lead portion 109b extending in a direction perpendicular to the back surface of the metal stem 109 protrudes from the back surface. Also, at the center of the metal stem 109,
A rod-shaped terminal 121 penetrating from the back surface to the front surface of the metal stem 109 is fixed. One end of the terminal 121 protrudes from the surface of the metal stem 109, and one end of the terminal 121 is electrically connected to the LD chip 102 via a wire 122.

[0005] One end face of a cylindrical metal cap 110 is joined to the surface of the metal stem 109.
With the cap 110, the mounting portion 109a, the heat sink 103, the LD chip 102, and the wire 122
Also, portions of the terminals 121 protruding from the surface of the metal stem 109 are covered. At the other end of the cap 110, a cover glass 111 for closing the opening of the cap 110 is provided.
, And the LD chip 102 and the like are sealed by the cap 110 and the cover glass 111. The cover glass 111 serves as an emission window for laser light emitted from the LD chip 102.

As a method of manufacturing the semiconductor laser device shown in FIGS. 4A and 4B, an LD chip 102 is mounted on a mounting portion 109a of a metal stem 109 via a heat sink 103, and the LD chip 102 is mounted. Perform wire bonding. Thereafter, the cap 110 to which the cover glass 111 has been fused is attached to the metal stem 10 by projection welding.
The LD chip 102 is sealed by bonding to the surface of the LD chip 102.

In such a semiconductor laser device, a metal package is used as a method for sealing the LD chip 102, and the LD chip 102 is made of a metal cap 11.
0 and the metal stem 109. Therefore, heat conduction from the inside to the outside of the semiconductor laser device is high, and there is little problem with heat radiation of the LD chip 102.
In positioning the light emitting point of the semiconductor laser device, the back surface of the metal stem 109 is used as a reference surface, and the positioning is performed by abutting the back surface of the metal stem 109 against a housing of an electronic device or the like.

The problems of the above-described metal packaged semiconductor laser device include that the number of individual parts is large, the cost of manufacturing each component is high, and the cost of the semiconductor laser device is also high. The cost required for manufacturing the metal stem 109 and the cap 110 is several tens of yen each. In order to solve the problem that the cost of each component is high, a semiconductor laser device described later with reference to FIG. 5 has been considered.

FIG. 5 is a diagram for explaining a conventional semiconductor laser device. FIG. 5A is a top view showing a conventional semiconductor laser device, and FIG.
It is sectional drawing of the semiconductor laser device shown to (a).

In the semiconductor laser device shown in FIGS. 5A and 5B, one end of a lead frame 201a is connected to a plate-like mounting portion 201d on which an LD chip is mounted.
It has become. The other end of the lead frame 201a is an electrode lead 201g. The lead frame 201a is provided so as to cover the periphery and the back surface of the mounting portion 201d.
In addition, a resin mold 204 as an insulating member is formed. The side surface of the mounting portion 201d and the entire back surface are covered with the resin mold 204. And the mounting unit 201
d and the electrode lead portion 201g are
It is exposed from. An LD chip 202 is mounted on the surface of the mounting portion 201d via a heat sink 203. The heat generated by the LD chip 202 is transferred to the heat sink 2
03 to the lead frame 201a.

Further, lead frames 201b and 201c parallel to the electrode lead portions 201g of the lead frame 201a are fixed to the resin mold 204, and the lead frames 201a, 201b and 201c are arranged in parallel. LD chip 2 of lead frame 201b
The end on the 02 side is a connecting portion 201e, and the end on the LD chip 202 side of the lead frame 201c is a connecting portion 201f. Connections 201e and 20
One surface of 1f is exposed on the same surface of the resin mold 204 as the surface of the mounting portion 201d is exposed. The exposed surface of the connection part 201e of the lead frame 201b is electrically connected to the LD chip 202 via the wire 209.

On both sides of the resin mold 204, mounting brackets 208 used for mounting the semiconductor laser device to a housing of an electronic device or the like are mounted. When attaching the semiconductor laser device to the housing,
By attaching the mounting bracket 208 to a housing or the like, L
The light emitting point of the D chip 202 is positioned. The heat generated in the LD chip 202 is also radiated from the mounting bracket 208.

In such a semiconductor laser device, a plastic mold package is used as a method for encapsulating the LD chip 202, and there are advantages in that the number of components is small and the cost is low as compared with a metal package. Metal stem 1 shown in FIGS. 4 (a) and 4 (b)
09 and the cost required to produce the cap 110 each cost several tens of yen per piece,
The cost of plastic mold package is 1
From several yen to more than ten yen per piece.

[0014]

However, FIG.
(A) and the conventional semiconductor laser device shown in FIG.
04 of the lead frame 201a.
The electrode lead portion 201g, which is a portion to which heat generated in the D chip 202 is transmitted, is thin and long. Therefore, the LD chip 202
Is severe, heat from the LD chip 202 cannot be efficiently released and the temperature of the LD chip 202 rises. When the temperature of the LD chip rises, the life of the LD chip is shortened,
Oscillation of the chip may become impossible.

An object of the present invention is to provide a semiconductor laser device capable of sufficiently releasing heat from an LD chip, reducing the cost, and accurately and easily positioning the light emitting point of the LD chip. To provide.

[0016]

In order to achieve the above object, the present invention provides a laser diode chip, a lead frame having a mounting portion on which the laser diode chip is mounted on a surface, and a laser mounted on the mounting portion. A semiconductor laser device having an insulating member covering at least a part of the lead frame for enclosing the diode chip, wherein at least a part of the back surface of the mounting portion of the lead frame is exposed from the insulating member; The exposed portion of the back surface of the portion serves as a reference for determining the position of the light emitting point of the laser diode chip.

In the above invention, since at least a portion of the back surface of the mounting portion of the lead frame is exposed from the insulating member, heat generated by the laser diode chip is radiated from the exposed portion of the back surface of the mounting portion. Therefore, heat can be efficiently released from the semiconductor laser device. Also, since the exposed portion of the back surface of the mounting portion serves as a reference for determining the position of the light emitting point of the laser diode chip, for example, when mounting the semiconductor laser device to the housing of the electronic device, By pressing the exposed portion of the back surface of the portion against the reference surface of the housing or as a reference for image processing, the light emitting point of the laser diode chip can be accurately arranged. Also, when the semiconductor laser device is mounted on the housing of the electronic device,
By bringing the exposed portion into contact with a metal portion of the housing or the like, heat generated in the laser diode chip can be efficiently released.

Further, the laser light which is arranged in the traveling direction of the laser light emitted from the laser diode chip and which is incident from the side opposite to the laser diode chip and travels toward the laser diode chip is defined as the direction toward the laser diode chip. A microprism that reflects light in different directions and a light receiving element on which the laser light reflected by the microprism enters may be sealed together with the laser diode chip.

Furthermore, the mounting portion of the lead frame is plate-shaped, and the laser diode chip is mounted on the mounting portion so that laser light is emitted from the laser diode chip in a direction parallel to the mounting portion. preferable.

As described above, since the laser diode chip is mounted on the mounting portion so that laser light is emitted from the laser diode chip in a direction parallel to the plate-shaped mounting portion, the above-described micro prism and the like can be used. When enclosing together with the laser diode chip, the microprisms and the laser diode chip are arranged in a direction parallel to the plate-shaped mounting portion. Therefore, in this case, the semiconductor laser device can be made thinner. Furthermore, the lead frame has a plurality of rod-shaped electrode leads, and a specific number of the electrode leads among the plurality of electrode leads is formed of the insulating member. Protruding from one side, and
Among the plurality of electrode portions, the electrode lead portions other than the specific number of electrode lead portions may protrude from the other side surface of the insulating member.

Further, the laser diode chip is mounted on a mounting portion of the lead frame via a heat sink for guiding heat generated by the laser diode chip to the lead frame, and resin is used as a material of the insulating member. Is preferred.

As described above, resin is used as the material of the insulating member for enclosing the laser diode chip,
By sealing the laser diode chip with the resin mold package, the number of components is reduced as compared with the conventional metal package, and the cost of the semiconductor laser device is reduced.

[0023]

Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 is a diagram for explaining a semiconductor laser device according to a first embodiment of the present invention. FIG. 1A is a cross-sectional view in a direction parallel to a top surface of the semiconductor laser device of the present embodiment, and FIG. 1B is a cross-sectional view in a direction parallel to a side surface of the semiconductor laser device of the present embodiment. is there.

In the semiconductor laser device of the present embodiment, FIG.
As shown in FIG. 1A and FIG. 1B, one end of the lead frame 1a is a plate-shaped mounting portion 1d on which an LD chip is mounted. The other end of the lead frame 1a is an electrode lead 1g extending in one direction.
The LD chip 2 is mounted on the surface of the mounting portion 1d of the lead frame 1a via the heat sink 3. The LD chip 2 is arranged so that laser light is emitted from the LD chip 2 in a direction parallel to the electrode lead portion 1g. A resin mold 4 for enclosing the LD chip 2 and the heat sink 3 is formed on the lead frame 1a.
The LD chip 2 and the heat sink 3 are covered with the resin mold 4 except for the upper surface of the LD chip 2 and the side of the LD chip 2 in the traveling direction of the laser light emitted from the LD chip 2.

The mounting portion 1 is formed by the resin mold 4.
d and the portion of the lead frame 1a between the mounting portion 1d and the electrode lead portion 1g. The mounting portion 1d is thicker than the electrode lead portion 1g, and a portion on the back surface side of the mounting portion 1d is projected and exposed from the resin mold 4. One side of the back surface of the mounting portion 1d exposed from the resin mold 4 is a reference 7 for positioning the semiconductor laser device. LD chip 2 on mounting part 1d
Is mounted, the LD chip 2 is accurately arranged at a position determined from the reference 7.

Further, lead frames 1b and 1c parallel to the electrode lead portion 1g are fixed to the resin mold 4 together with the lead frame 1a. Lead frame 1
b, 1a, and 1c are arranged in parallel in this order, and the three lead frames are arranged in the same plane. The end of the lead frame 1b on the LD chip 2 side is a connection part 1e, and the end of the lead frame 1c on the LD chip 2 side is a connection part 1f. Connections 1e and 1f
Are exposed on the same surface of the resin mold 4 as the surface on which the surface of the mounting portion 1d is exposed. The exposed surface of the connection portion 1e of the lead frame 1b is electrically connected to the LD chip 2 via the wire 9.

A transparent cap 5 is attached to the resin mold 4 so as to cover the upper surface of the LD chip 2 and the side of the LD chip 2 in the traveling direction of the laser light emitted from the LD chip 2. Thus, the LD chip 2 and the sheet sink 3 are sealed inside the semiconductor laser device.

In such a semiconductor laser device, heat is generated in the LD chip 2 by causing a current to flow through the LD chip 2 in order to emit laser light from the LD chip 2.
The heat generated in the LD chip 2 is transmitted to the mounting portion 1d of the lead frame 1a through the heat sink 3, and the heat transmitted to the mounting portion 1d is released from the back surface of the mounting portion 1d to the outside of the semiconductor laser device. Further, when the semiconductor laser device is mounted on an electronic device or the like, the heat from the LD chip 2 can be efficiently emitted from the semiconductor laser device by bringing the reference surface 7 into contact with the metal housing of the electronic device.

When a semiconductor laser device is used, it is overwhelmingly used in combination with an optical element such as a lens. In this case, in order to accurately determine the optical distance, in the present embodiment, as described above, the laser beam is emitted so as to be emitted in a direction parallel to the mounting portion 1d and the electrode lead portion 1g.
The chip 2 is arranged, and the reference 7 of the lead frame 1a and L
The relationship between the position of the light emitting point of the D chip 2 and the distance (the distance between the reference 7 and the light emitting point) is defined. Thus, when the semiconductor laser device is used, if the reference 7 is abutted against a counterbore of the housing and the semiconductor laser device is fixed, the position of the light emitting point can be defined.

As described above, in the semiconductor laser device of the present embodiment, since the back surface of the mounting portion 1d of the lead frame 1a is exposed from the resin mold 4, the LD chip 2 Since the heat generated in the semiconductor laser device is dissipated, the heat can be efficiently released from the semiconductor laser device. In addition, one side of the back side of the mounting portion 1d is used as a reference 7 for determining the position of the light emitting point of the LD chip 2.
When the semiconductor laser device is mounted on the housing of the electronic device, the reference 7 is pressed against the reference surface of the housing or used as a reference for image processing, so that the light emitting point of the LD chip 2 can be adjusted. Can be arranged accurately and easily. Further, when the semiconductor laser device is mounted on the housing of the electronic device, the heat generated by the LD chip 2 can be efficiently dissipated by bringing the back surface portion of the mounting portion 1d into contact with a metal portion of the housing. Can be.

Further, since a resin mold package is used as a method of sealing the LD chip 2, the cost of the semiconductor laser device can be kept low.

(Second Embodiment) FIG. 2 is a view for explaining a semiconductor laser device according to a second embodiment of the present invention. FIG. 2A is a cross-sectional view in a direction parallel to the upper surface of the semiconductor laser device of the present embodiment, and FIG. 2B is a cross-sectional view in a direction parallel to the side surface of the semiconductor laser device of the present embodiment. is there. The semiconductor laser device of the present embodiment is different from the semiconductor laser device of the first embodiment in that the lead frames protrude from both sides of the semiconductor laser device.

In the semiconductor laser device of this embodiment, FIG.
As shown in FIG. 2A and FIG. 2B, the lead frame 21a is a plate-shaped mounting portion 21d on which the LD chip is mounted.
And an electrode lead portion 21g projecting from one side surface of the mounting portion 21d, and an electrode lead portion 21h projecting from the other side surface of the mounting portion 21d. The thickness of the mounting portion 21d is larger than the thickness of other portions of the lead frame 21a.

A resin mold 24, which is an insulating member for enclosing an LD chip mounted on the lead frame 21a, is formed on the lead frame 21a. Although a part of the lead frame 21a is covered with the resin mold 24, the front and back surfaces of the mounting portion 21d and the electrode lead portions 21g and 21h are exposed from the resin mold 24. A portion on the back surface side of the mounting portion 21d protrudes from the resin mold 24, and one side of the protruding portion is a reference 27.

In an assembling apparatus for assembling the semiconductor laser device of the present embodiment to an electronic device or the like, the reference 27 is pressed against a reference surface of the assembling apparatus or the reference 27 is used as a reference for image processing. The accuracy of the assembling position can be improved.

A heat sink 23 is provided on the surface of the mounting portion 21d.
, An LD chip 22 is mounted. Where L
The LD chip 22 is installed such that the position of the light emitting point of the D chip 22 is accurately arranged at a predetermined distance determined from the reference 27.

The resin lead 24 has an electrode lead 21
A lead frame 21c projecting from one side surface of the semiconductor laser device together with g, and a lead frame 21b projecting from the other side surface of the semiconductor laser device together with the electrode lead portion 21h are fixed. Lead frame 21b and L
The D chip 22 is electrically connected via a wire 29. Then, the LD chip 22 and the heat sink 2
3, a transparent cap 25 is attached to the resin mold 24.

When such a semiconductor laser device is mounted on a housing of an electronic device or the like, adjustment of the optical axis of the LD chip 22 is performed by pressing the reference 27 against a concave portion of the housing.
The light emitting point of the LD chip 22 can be positioned in the optical axis direction.

In the semiconductor laser device of this embodiment, as in the first embodiment, since the heat generated in the LD chip 22 is released from the back surface of the mounting portion 21d, the temperature rise of the LD chip 22 is suppressed. You.

Further, by contacting a portion of the back surface of the mounting portion 21d exposed from the resin mold 4 with a housing or the like, heat generated in the LD chip 22 can be released from the back surface of the mounting portion 21d to the housing. It is. Further, since the package of this semiconductor laser device is made of a plastic mold, the cost can be reduced as compared with a conventional metal package.

(Third Embodiment) FIG. 3 is a view for explaining a semiconductor laser device according to a third embodiment of the present invention. FIG. 3A is a cross-sectional view in a direction parallel to the upper surface of the semiconductor laser device of the present embodiment, and FIG. 3B is a cross-sectional view in a direction parallel to the side surface of the semiconductor laser device of the present embodiment. is there. The semiconductor laser device of the present embodiment is significantly different from the semiconductor laser devices of the first and second embodiments in that a microprism and a light receiving element are sealed together with an LD chip.

In the semiconductor laser device of this embodiment, FIG.
As shown in FIG. 3A and FIG. 3B, the lead frame 41a is a plate-like mounting portion 41d on which the LD chip is mounted.
And an electrode lead portion 41g projecting from one side surface of the mounting 41d, and an electrode lead portion 41h projecting from the other side surface of the mounting portion 41d. The thickness of the mounting portion 41d is thicker than the thickness of other portions of the lead frame 41a.

On the lead frame 41a, a resin mold 44, which is an insulating member for enclosing the LD chip 42 mounted on the lead frame 41a, is formed. Although a part of the lead frame 41a is covered with the resin mold 44, the front and back surfaces of the mounting portion 41d and the electrode lead portions 41g and 41h are covered with the resin mold 44.
It is exposed from 4. A portion on the back surface side of the mounting portion 41 d protrudes from the resin mold 44, and one side of the protruding portion serves as a reference 47.

In the assembling apparatus for assembling the semiconductor laser device of the present embodiment to an electronic device, the assembling of the semiconductor laser device is performed by pressing the reference 47 against the reference surface of the assembling apparatus or using the reference 47 as a reference for image processing. Position accuracy can be improved.

A heat sink 43 is provided on the surface of the mounting portion 41d.
, An LD chip 42 is mounted. Where L
The LD chip 42 is installed such that the position of the light emitting point of the D chip 42 is accurately arranged at a predetermined distance determined from the reference 47. Also, the laser beam is emitted from the LD chip 42 in a direction parallel to the mounting portion 41d.
The D chip 42 is mounted.

On the surface of the resin mold 44 where the surface of the mounting portion 41 d is exposed, a micro prism 52 arranged in the traveling direction of the laser light emitted from the LD chip 42.
And an IC built-in light receiving element 52 sandwiched between the microprism 52 and the resin mold 44 are mounted. The microprism 52 reflects the laser beam incident on the microprism 53 from the side opposite to the LD chip 42 side and traveling toward the LD chip 42 toward the light receiving element 52 with a built-in IC. Reflected by the microprism 53
The laser beam incident on the light receiving element 52 with built-in C is converted into an electric signal by the light receiving element 52 with built-in IC.

The resin lead 44 has an electrode lead 41
The lead frames 41c, 41j, and 41l projecting from one side of the semiconductor laser device together with g, and the lead frames 41b, 41i, and 41k projecting from the other side of the semiconductor laser device together with the electrode lead portions 41h are fixed. The lead frame 41b and the LD chip 42 are electrically connected via wires 49. And L
D chip 42, heat sink 43, light receiving element 5 with built-in IC
A transparent cap 45 is attached to the resin mold 44 so that the microcaps 2 and the microprism 53 are sealed.

The semiconductor laser device of this embodiment is used for reproducing an optical disk such as a CD or a DVD.
In this case, the signal of the optical disk is read by irradiating the recording medium of the optical disk with the laser light emitted from the semiconductor laser device and receiving the light reflected by the optical disk by the light receiving element 52 with built-in IC.

In the operation of the semiconductor laser device of this embodiment, the laser light emitted from the LD chip 42 is irradiated on the optical disk through the micropro prism 53 and the transparent cap 45. The laser light applied to the optical disk is reflected on the optical disk in a direction toward the LD chip 42, and the reflected laser light returns to the inside of the semiconductor laser device and enters the microprism 53. Micro prism 5
The laser light incident on 3 is reflected by the micro prism 53 toward the light receiving element 52 with built-in IC, and is converted into an electric signal by the light receiving element 52 with built-in IC.

In the semiconductor laser device used for reproducing an optical disk as described above, the positioning of the semiconductor laser device can be performed by abutting, as in the first and second embodiments. Further, a semiconductor laser device having high heat dissipation can be obtained. Furthermore, since the LD chip 42 is mounted so that laser light is emitted from the LD chip 42 in a direction parallel to the mounting portion 41d, the microprism 53 and the LD chip 42 are arranged in a direction parallel to the mounting portion 41d. And the thickness of the semiconductor laser device can be reduced.

[0052]

As described above, according to the present invention, since at least a part of the back surface of the mounting portion of the lead frame is exposed from the insulating member, the heat generated by the laser diode chip can be efficiently released. Since the temperature rise of the semiconductor laser device can be suppressed, there is an effect that the characteristics of the laser diode chip do not change and a highly reliable semiconductor laser device can be obtained. In addition, because the exposed portion of the back surface of the mounting portion is a reference for determining the position of the light emitting point of the laser diode chip, for example, when attaching the semiconductor laser device to the housing of the electronic device, By pressing the exposed part of the back surface of the mounting part against the reference surface of the housing or as a reference for image processing, it is possible to easily and accurately arrange the light emitting points of the laser diode chip. effective.

Further, by using resin as a material of the insulating member for enclosing the laser diode chip and sealing the laser diode chip with a resin mold package, the number of parts is reduced as compared with a conventional metal package. This has the effect of reducing the cost of the semiconductor laser device.

[Brief description of the drawings]

FIG. 1 is a diagram for describing a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a diagram for describing a semiconductor laser device according to a second embodiment of the present invention.

FIG. 3 is a diagram illustrating a semiconductor laser device according to a third embodiment of the present invention.

FIG. 4 is a diagram for explaining a semiconductor laser device according to a conventional technique.

FIG. 5 is a diagram for explaining a semiconductor laser device according to a conventional technique.

[Explanation of symbols]

1a, 1b, 1c, 21a, 21b, 21c, 41c,
41b, 41i, 41j, 41k, 41l Lead frame 1d, 21d, 41d Mounting part 1e, 1f Connection part 1g, 21g, 21h, 41g, 41h Electrode lead part 2, 22, 42 LD chip 3, 23, 43 Heat sink 4, 24, 44 Resin mold 5, 25, 45 Transparent cap 7, 27, 47 Reference 9, 29, 49 Wire 52 IC built-in light receiving element 53 Micro prism

Claims (6)

[Claims] At least one of a lead frame having a laser diode chip, a mounting portion on which the laser diode chip is mounted on a surface, and at least one of the lead frames for enclosing the laser diode chip mounted on the mounting portion. An insulating member covering the portion, at least a part of the back surface of the mounting portion of the lead frame is exposed from the insulating member, and the exposed portion of the back surface of the mounting portion is A semiconductor laser device serving as a reference for determining a position of a light emitting point of the laser diode chip. 2. A laser beam, which is arranged in a traveling direction of laser light emitted from the laser diode chip and is incident from a side opposite to the laser diode chip side and travels toward the laser diode chip, is transmitted to the laser diode chip. 2. The semiconductor laser device according to claim 1, wherein a microprism that reflects light in a direction different from a direction toward the light-receiving element and a light-receiving element on which the laser light reflected by the microprism is incident are enclosed together with the laser diode chip. 3. The mounting portion of the lead frame has a plate shape, and the laser diode chip is mounted on the mounting portion such that laser light is emitted from the laser diode chip in a direction parallel to the mounting portion. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is mounted. 4. The lead frame has a plurality of rod-shaped electrode leads, and a specific number of the electrode leads among the plurality of electrode leads protrudes from one side surface of the insulating member. 4. The semiconductor laser device according to claim 1, wherein, of said electrode portions, electrode lead portions other than said specific number of electrode lead portions project from the other side surface of said insulating member. 5. 5. The laser diode chip is mounted on the mounting portion of the lead frame via a heat sink for guiding heat generated by the laser diode chip to the lead frame. 3. The semiconductor laser device according to 1. 6. The semiconductor laser device according to claim 1, wherein a resin is used as a material of said insulating member.