JPH11307499A - Wafer processing device - Google Patents
Wafer processing deviceInfo
- Publication number
- JPH11307499A JPH11307499A JP11517998A JP11517998A JPH11307499A JP H11307499 A JPH11307499 A JP H11307499A JP 11517998 A JP11517998 A JP 11517998A JP 11517998 A JP11517998 A JP 11517998A JP H11307499 A JPH11307499 A JP H11307499A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- processing
- processing chamber
- opening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、液晶表示器用ガラ
ス基板、カラーフィルタ用ガラス基板、フォトマスク用
基板、サーマルヘッド用セラミック基板、プリント基
板、半導体ウエハなどの基板の処理を行う基板処理装
置、特に、基板を搬入又は搬出するための開口を有する
処理チャンバー、その開口を開閉する開閉手段、及び処
理チャンバー内の雰囲気を排気する排気手段を備えた基
板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing substrates such as glass substrates for liquid crystal displays, glass substrates for color filters, substrates for photomasks, ceramic substrates for thermal heads, printed substrates, and semiconductor wafers. In particular, the present invention relates to a substrate processing apparatus provided with a processing chamber having an opening for loading or unloading a substrate, opening / closing means for opening / closing the opening, and exhaust means for exhausting the atmosphere in the processing chamber.
【０００２】[0002]
【従来の技術】従来の基板処理装置としては、搬送方向
に並設された搬送ローラなどにより処理チャンバー内に
基板を搬送して、処理液供給手段から基板上に処理液を
シャワー供給することにより所定の基板処理（洗浄、現
像、エッチング、剥離等）を行うものが知られている。
このような基板処理装置においては、処理液として洗浄
液、現像液、エッチング液および剥離液などの薬液が基
板面に供給される。これらの処理液は、処理チャンバー
内に配設されたノズルから基板の上面に供給される。2. Description of the Related Art As a conventional substrate processing apparatus, a substrate is transported into a processing chamber by transport rollers arranged in parallel in a transport direction, and a processing liquid is shower-supplied from a processing liquid supply unit onto the substrate. What performs a predetermined | prescribed board | substrate process (washing, development, etching, peeling, etc.) is known.
In such a substrate processing apparatus, a chemical such as a cleaning liquid, a developing liquid, an etching liquid, and a stripping liquid is supplied to the substrate surface as a processing liquid. These processing liquids are supplied to the upper surface of the substrate from nozzles provided in the processing chamber.
【０００３】[0003]
【発明が解決しようとする課題】図５に、連続枚葉式の
基板処理装置の一例を示す。この基板処理装置１０１で
は、薬液貯留槽１５０に貯留した薬液をポンプ１５１に
よってノズル１５３に供給し、処理チャンバー１１０内
に収容された基板にノズル１５３から薬液を吹き付けて
基板に薬液処理を施す。基板の薬液処理に使用した薬液
は、処理チャンバー１１０の下部から薬液貯留槽１５０
に戻され、再び薬液処理に使用される。このように、こ
の基板処理装置１０１では、薬液が循環使用されてい
る。一方、処理チャンバー１１０は、装置外の排気ダク
トにつながる排気配管１１２と連通しており、排気ダク
トのドラフトにより常時内部の雰囲気が強制排気されて
いる。これにより、処理チャンバー１１０内の薬液を含
んだ雰囲気が搬入口１１０ａや搬出口１１０ｂから処理
チャンバー１１０の外（例えば、隣接する別の処理チャ
ンバー１２０，１３０）に漏れ出すことを抑制してい
る。FIG. 5 shows an example of a continuous single-wafer type substrate processing apparatus. In the substrate processing apparatus 101, the chemical stored in the chemical storage tank 150 is supplied to the nozzle 153 by the pump 151, and the substrate accommodated in the processing chamber 110 is sprayed with the chemical from the nozzle 153 to perform the chemical processing on the substrate. The chemical used for the chemical processing of the substrate is supplied from the lower part of the processing chamber 110 to the chemical storage tank 150.
And used again for chemical treatment. Thus, in the substrate processing apparatus 101, the chemical is circulated. On the other hand, the processing chamber 110 communicates with an exhaust pipe 112 connected to an exhaust duct outside the apparatus, and the internal atmosphere is constantly exhausted by a draft of the exhaust duct. Accordingly, the atmosphere containing the chemical solution in the processing chamber 110 is prevented from leaking out of the processing chamber 110 from the carry-in port 110a or the carry-out port 110b (for example, another adjacent processing chambers 120 and 130).
【０００４】しかしながら、この基板処理装置１０１の
ような装置では、蒸気やミストとなった薬液が雰囲気と
ともに大量に排気されてしまう。このため、循環使用さ
れている薬液の量の減少を補う補充薬液が大量に必要に
なり、また、排気された雰囲気に含まれる薬液を処理す
るために大きな費用がかかる。図６に、タクト枚葉式の
基板処理装置の一例を示す。この基板処理装置１０２
は、図５の基板処理装置１０１の処理チャンバー１１０
の搬入口１１０ａ及び搬出口１１０ｂにシャッター１１
７，１１８を設けた構造であり、シャッター１１７，１
１８により搬入口１１０ａ及び搬出口１１０ｂが開閉さ
れる。処理チャンバー１１０内で基板に処理を施してい
る間は搬入口１１０ａ及び搬出口１１０ｂを閉め、処理
チャンバー１１０に基板を搬入及び搬出するときには、
搬入口１１０ａ及び搬出口１１０ｂを開ける。[0004] However, in an apparatus such as the substrate processing apparatus 101, a large amount of vapor or mist is exhausted together with the atmosphere. For this reason, a large amount of replenisher chemicals is required to compensate for the decrease in the amount of chemicals used in circulation, and a large cost is required to treat the chemicals contained in the exhausted atmosphere. FIG. 6 shows an example of a tact single wafer type substrate processing apparatus. This substrate processing apparatus 102
Is a processing chamber 110 of the substrate processing apparatus 101 of FIG.
Shutter 11 at the entrance 110a and the exit 110b
7, 118, and the shutters 117, 1
The opening and closing of the carry-in entrance 110a and the carry-out exit 110b are performed by 18. While the substrate is being processed in the processing chamber 110, the carry-in port 110a and the carry-out port 110b are closed, and when the substrate is carried in and out of the processing chamber 110,
The entrance 110a and the exit 110b are opened.
【０００５】ここでは、基板の処理中は搬入口１１０ａ
及び搬出口１１０ｂが閉められるため処理チャンバー１
１０内の薬液を含んだ雰囲気が処理チャンバー１１０の
外に漏れ出すことは殆どないが、この基板の処理中に
も、搬入口１１０ａ及び搬出口１１０ｂが開けられてい
るときと同様に処理チャンバー１１０内の雰囲気が大量
に排気されている。したがって、上記基板処理装置１０
１と同様に、シャッター１１７，１１８を設けた基板処
理装置１０２においても、循環使用されている薬液の量
の減少を補う補充薬液が大量に必要になり、また、排気
された雰囲気に含まれる薬液を処理するために大きな費
用がかかる。さらに、大量排気によって基板処理中に処
理チャンバー１１０内に外部の雰囲気が多く侵入してく
るため、基板処理時間が長くなる等の不具合が出る恐れ
もある。Here, during processing of the substrate, the carry-in port 110a is used.
And the processing port 1 because the carry-out port 110b is closed.
Although the atmosphere containing the chemical solution in the liquid 10 hardly leaks out of the processing chamber 110, even during the processing of the substrate, as in the case where the carry-in port 110a and the carry-out port 110b are opened, The atmosphere inside is exhausted in large quantities. Therefore, the substrate processing apparatus 10
Similarly to the first embodiment, the substrate processing apparatus 102 provided with the shutters 117 and 118 also requires a large amount of replenisher chemicals to make up for the decrease in the amount of the chemicals used in circulation, and the chemicals contained in the exhausted atmosphere. Costly to process. Furthermore, since a large amount of air causes a large amount of external atmosphere to enter the inside of the processing chamber 110 during the processing of the substrate, problems such as a long processing time of the substrate may occur.
【０００６】本発明の課題は、処理チャンバー外への開
口からの雰囲気の漏れ出しを抑制しつつ、処理チャンバ
ー内の雰囲気とともに排気される薬液の量を少なくする
ことのできる基板処理装置を提供することにある。An object of the present invention is to provide a substrate processing apparatus capable of reducing the amount of a chemical solution exhausted together with the atmosphere in the processing chamber while suppressing the leakage of the atmosphere from the opening outside the processing chamber. It is in.
【０００７】[0007]
【課題を解決するための手段】請求項１に係る基板処理
装置は、処理チャンバーと、排気手段と、制御手段とを
備えている。処理チャンバーは、処理液によって基板に
処理を施すチャンバーであって、基板を搬入又は搬出す
るための開口を有している。排気手段は、処理チャンバ
ーの内部の雰囲気を排気する。制御手段は、排気手段に
よる処理チャンバーの内部の雰囲気の排気量を制御し
て、処理チャンバーの内部の雰囲気が開口から処理チャ
ンバーの外部に出ないようにする。According to a first aspect of the present invention, a substrate processing apparatus includes a processing chamber, an exhaust unit, and a control unit. The processing chamber is a chamber for performing processing on a substrate with a processing liquid, and has an opening for loading or unloading the substrate. The exhaust unit exhausts the atmosphere inside the processing chamber. The control means controls the amount of exhaust of the atmosphere inside the processing chamber by the exhaust means so that the atmosphere inside the processing chamber does not come out of the processing chamber through the opening.
【０００８】本基板処理装置では、排気量を制御するこ
とができる構造を採っている。そして、制御手段によっ
て排気量を制御して、処理チャンバーの内部の雰囲気が
開口から処理チャンバーの外部に出ないようにしてい
る。したがって、処理チャンバーの内部の雰囲気が開口
から処理チャンバーの外部に出ない範囲で適正に排気量
を制御することにより、処理チャンバー内の雰囲気とと
もに排気される処理液の量を減らすことができる。The present substrate processing apparatus employs a structure capable of controlling the amount of exhaust gas. The exhaust amount is controlled by the control means so that the atmosphere inside the processing chamber does not come out of the processing chamber from the opening. Therefore, by appropriately controlling the exhaust amount within a range in which the atmosphere inside the processing chamber does not come out of the processing chamber from the opening, the amount of the processing liquid exhausted together with the atmosphere in the processing chamber can be reduced.
【０００９】請求項２に係る基板処理装置は、開閉手段
をさらに備えている。開閉手段は、処理チャンバーの開
口を開閉する。また、制御手段は、開閉手段によって開
口を閉めたときに排気手段による処理チャンバーの内部
の雰囲気の排気量が少なくなるように制御する。本基板
処理装置では、開口が開いているときの排気量よりも開
口が閉まっているときの排気量のほうが少なくなるよう
に制御される。これにより、開口が開いていて処理チャ
ンバー内の雰囲気が外部に出ていく恐れの大きいときに
は、処理チャンバー内の雰囲気を大量に排気して処理チ
ャンバー内の雰囲気の外部への流出が抑えられ、開口が
閉まっていて処理チャンバー内の雰囲気が外部へ流出す
る恐れの小さいときには、排気量を絞って排気により処
理チャンバー内から持ち出される処理液の量が抑えられ
る。[0009] The substrate processing apparatus according to a second aspect further includes opening / closing means. The opening and closing means opens and closes the opening of the processing chamber. Further, the control means controls the exhaust amount of the atmosphere inside the processing chamber by the exhaust means to be reduced when the opening is closed by the opening / closing means. In the present substrate processing apparatus, control is performed such that the amount of exhaust when the opening is closed is smaller than the amount of exhaust when the opening is open. With this, when the opening is open and the atmosphere in the processing chamber is likely to go outside, the atmosphere in the processing chamber is exhausted in large quantities to suppress the outflow of the atmosphere in the processing chamber to the outside. When the atmosphere in the processing chamber is unlikely to flow out to the outside due to the closed state, the amount of processing liquid taken out of the processing chamber by the exhaust is reduced by reducing the amount of exhaust.
【００１０】このように、ここでは、開口が閉まってい
るときには排気量を絞っても処理チャンバー内の雰囲気
が開口から外部に流出する恐れが小さいことに着目し
て、排気手段による排気量の制御を可能とするととも
に、開口を閉めたときに排気量が少なくなるように制御
している。請求項３に係る基板処理装置は、請求項２に
記載の装置において、排気手段は排気路を有しており、
その排気路は処理チャンバーに接続されている。また、
排気路は、可変流路抵抗を含んでいる。制御手段は、可
変流路抵抗によって、排気路を流れる排気に対する流路
抵抗を変更する。具体的には、制御手段は、開閉手段に
よって開口を閉めたときに排気路を流れる排気に対する
流路抵抗が増加するように、制御を行う。[0010] As described above, when the opening is closed, attention is paid to the fact that even if the amount of exhaust is reduced, the atmosphere in the processing chamber is less likely to flow out of the opening through the opening, and the exhaust means is controlled by the exhaust means. And the control is performed such that the exhaust amount is reduced when the opening is closed. According to a third aspect of the present invention, in the apparatus of the second aspect, the exhaust means has an exhaust path,
The exhaust path is connected to the processing chamber. Also,
The exhaust path includes a variable flow path resistance. The control means changes the flow path resistance to the exhaust flowing through the exhaust path by the variable flow path resistance. Specifically, the control means performs control such that the flow path resistance to exhaust flowing through the exhaust path increases when the opening is closed by the opening / closing means.
【００１１】ここでは、可変流路抵抗が排気路に設けら
れており、制御手段は、この可変流路抵抗により排気路
の流路抵抗を変更することによって、排気手段による排
気量を調整する。そして、開口を閉めたときに排気路を
流れる排気に対する流路抵抗が増加するような制御が行
われるため、開口を閉めたときには排気手段による排気
量は小さくなる。Here, a variable flow path resistance is provided in the exhaust path, and the control means adjusts the amount of exhaust by the exhaust means by changing the flow path resistance of the exhaust path with the variable flow path resistance. When the opening is closed, control is performed such that the flow path resistance to the exhaust flowing through the exhaust path is increased. Therefore, when the opening is closed, the amount of exhaust by the exhaust unit is reduced.
【００１２】請求項４に係る基板処理装置は、請求項３
に記載の装置において、可変流路抵抗は、開度を調整す
ることのできる自動開度調整手段である。ここでは、自
動開度調整手段である可変流路抵抗の開度を変えること
によって、排気手段による排気量を調整することができ
る。請求項５に係る基板処理装置は、請求項２から４の
いずれかに記載の装置において、処理チャンバーは、常
温以上の温度の処理液によって基板に処理を施す処理チ
ャンバーである。According to a fourth aspect of the present invention, there is provided a substrate processing apparatus.
In the device described in (1), the variable flow path resistance is an automatic opening adjustment means capable of adjusting the opening. Here, by changing the opening of the variable flow path resistance, which is the automatic opening adjusting means, the amount of exhaust by the exhaust means can be adjusted. According to a fifth aspect of the present invention, in the apparatus according to any one of the second to fourth aspects, the processing chamber is a processing chamber for processing a substrate with a processing liquid having a temperature equal to or higher than room temperature.
【００１３】常温以上の温度の処理液で行う処理では特
に処理チャンバー内の雰囲気に処理液の蒸気やミストが
多量に存在する。このような処理を基板に施す処理チャ
ンバーにおいては排気によって処理チャンバー外に持ち
出される処理液の量が多い。ここでは、処理中であって
開口を閉めているときにおいて排気量が少なくなるよう
に制御されるため、処理チャンバー内から持ち出される
処理液の量が抑えられる。このように、基板に常温以上
の温度の処理液で処理を施す処理チャンバーを備えた基
板処理装置に請求項２から４のいずれかに記載の制御を
行うと、その効果はより明確に現れる。[0013] In a treatment performed with a treatment liquid at a temperature equal to or higher than normal temperature, a large amount of vapor or mist of the treatment liquid is present particularly in the atmosphere in the treatment chamber. In a processing chamber for performing such processing on a substrate, a large amount of processing liquid is taken out of the processing chamber by exhaustion. Here, since the amount of exhaust gas is controlled to be reduced during the processing and when the opening is closed, the amount of the processing liquid taken out of the processing chamber is suppressed. As described above, when the control according to any one of claims 2 to 4 is performed on the substrate processing apparatus including the processing chamber for performing the processing on the substrate with the processing liquid having the temperature equal to or higher than the normal temperature, the effect is more clearly exhibited.
【００１４】請求項６に係る基板処理装置は、請求項１
から５のいずれかに記載の装置において、処理液は、処
理液貯留槽と処理チャンバーとの間を循環する。処理液
貯留槽は、処理チャンバーの外部に設けられた処理液を
貯留する槽である。ここでは、処理液を循環させている
ため、排気により処理液が持ち出されると、処理液貯留
槽に新たな処理液を補充しなけれればならない。しかし
ながら、本基板処理装置では請求項１から５のいずれか
に記載の制御が行われるため、処理チャンバー内の雰囲
気とともに排気される処理液の量が少なく、処理液貯留
槽に補充しなければならない新たな処理液の量も少なく
なる。According to a sixth aspect of the present invention, there is provided a substrate processing apparatus.
In the apparatus according to any one of Items 1 to 5, the processing liquid circulates between the processing liquid storage tank and the processing chamber. The processing liquid storage tank is a tank provided outside the processing chamber for storing the processing liquid. Here, since the processing liquid is circulated, when the processing liquid is taken out by exhaustion, it is necessary to replenish the processing liquid storage tank with a new processing liquid. However, since the control according to any one of claims 1 to 5 is performed in the present substrate processing apparatus, the amount of the processing liquid exhausted together with the atmosphere in the processing chamber is small, and the processing liquid must be replenished to the processing liquid storage tank. The amount of fresh processing liquid is also reduced.
【００１５】[0015]
【発明の実施の形態】図１及び図２に本発明の一実施形
態における基板処理装置１の一部を示す。この基板処理
装置１は、液晶表示器用のガラス基板（以下、基板とい
う。）に各種の処理を施す装置であって、剥離処理のた
めの剥離処理チャンバー１０及び剥離処理チャンバー１
０の前後に配置される処理チャンバー２０，３０を含む
複数の処理チャンバーが組み合わされた装置である。基
板は、基板処理装置１の各処理チャンバーを順に搬送さ
れ、例えば洗浄，レジスト塗布，露光，現像，エッチン
グ，剥離等の各処理が施される。図１及び図２において
１点鎖線で示すラインが、基板の搬送経路である。1 and 2 show a part of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is an apparatus that performs various types of processing on a glass substrate (hereinafter, referred to as a substrate) for a liquid crystal display, and includes a separation processing chamber 10 and a separation processing chamber 1 for a separation processing.
This is an apparatus in which a plurality of processing chambers including the processing chambers 20 and 30 arranged before and after 0 are combined. The substrate is transported sequentially through the processing chambers of the substrate processing apparatus 1 and subjected to various processes such as cleaning, resist coating, exposure, development, etching, and peeling. In FIGS. 1 and 2, a line indicated by a dashed line is a substrate transfer path.
【００１６】図１に及び図２に示す剥離処理チャンバー
１０では、基板を内部に収容して、基板に剥離液（処理
液）を吹き付けて、エッチング工程でのマスクの役目を
終えた基板上のフォトレジスト膜を剥離（ウェット剥
離）する。この剥離処理チャンバー１０には、基板を搬
入するための搬入口（開口）１０ａと、基板を搬出する
ための搬出口（開口）１０ｂとが形成されており、その
内部には、基板搬送のための搬送ローラ１６と、基板に
剥離液を噴射する複数のノズル５３とが配備されてい
る。また、搬入口１０ａ及び搬出口１０ｂの開閉を行う
ために、搬入シャッター１７及び搬出シャッター１８が
設けられている。In the stripping chamber 10 shown in FIG. 1 and FIG. 2, the substrate is housed inside, and a stripping liquid (processing liquid) is sprayed on the substrate to finish the role of the mask in the etching step. The photoresist film is stripped (wet stripping). The peeling processing chamber 10 has a carry-in port (opening) 10a for carrying in the substrate and a carry-out port (opening) 10b for carrying out the substrate. And a plurality of nozzles 53 for injecting the stripping liquid onto the substrate. In addition, a carry-in shutter 17 and a carry-out shutter 18 are provided to open and close the carry-in entrance 10a and the carry-out exit 10b.
【００１７】剥離処理チャンバー１０の天井部には、排
気配管（排気手段）１２が接続されている。この排気配
管１２は、図示しない排気ダクト（排気手段）まで延び
ており、剥離処理チャンバー１０内の雰囲気を排気とし
て排気ダクトまで通す。排気配管１２の途中には、駆動
手段を内蔵した自動開度調整機能付きの自動バタフライ
バルブである排気ダンパー（自動開度調整手段）１３が
設けられている。また、排気配管１２の排気ダンパー１
３よりも剥離処理チャンバー１０側には、剥離処理チャ
ンバー１０内の圧力を測定するための圧力計１４が設置
されている。An exhaust pipe (exhaust means) 12 is connected to the ceiling of the stripping chamber 10. The exhaust pipe 12 extends to an exhaust duct (exhaust means) (not shown), and passes the atmosphere in the separation processing chamber 10 to the exhaust duct as exhaust. In the middle of the exhaust pipe 12, an exhaust damper (automatic opening adjustment means) 13 which is an automatic butterfly valve with an automatic opening adjustment function incorporating driving means is provided. Also, the exhaust damper 1 of the exhaust pipe 12
A pressure gauge 14 for measuring the pressure in the peeling processing chamber 10 is provided closer to the peeling processing chamber 10 than 3.
【００１８】剥離処理チャンバー１０の下部には、剥離
処理チャンバー１０内の剥離液を剥離液貯留槽（処理液
貯留槽）５０に戻すための戻り管５５が接続されてい
る。剥離液貯留槽５０は、剥離処理チャンバー１０の外
部に設けられている貯留槽であって、剥離処理に使用す
る所定量の剥離液を貯留する。この剥離液貯留槽５０に
は、適宜新しい剥離液が補充される。剥離液は、図１及
び図２に示すように、ポンプ５１によって、フィルター
５２及び供給管５４を介して剥離処理チャンバー１０内
のノズル５３に運ばれ、ノズル５３から基板に対して噴
射される。この剥離液は、アミン系の有機溶剤で、剥離
処理促進のために高温で基板に噴射される。A return pipe 55 for returning the stripping liquid in the stripping chamber 10 to the stripping liquid storage tank (processing liquid storage tank) 50 is connected to a lower portion of the stripping processing chamber 10. The stripping liquid storage tank 50 is a storage tank provided outside the stripping processing chamber 10 and stores a predetermined amount of stripping liquid used for stripping processing. A new stripping solution is appropriately replenished into the stripping solution storage tank 50. As shown in FIGS. 1 and 2, the stripping solution is transported by a pump 51 to a nozzle 53 in the stripping chamber 10 via a filter 52 and a supply pipe 54, and is jetted from the nozzle 53 onto the substrate. This stripping solution is an amine-based organic solvent, and is sprayed onto the substrate at a high temperature to accelerate the stripping process.
【００１９】搬入シャッター１７，搬出シャッター１８
は、基板の搬入，搬出のために、それぞれ搬入口１０
ａ，搬出口１０ｂを開閉する。図１に示す状態が、搬入
口１０ａ，搬出口１０ｂが閉まっている状態（以下、そ
れぞれ、搬入シャッター１７が閉の状態，搬出シャッタ
ー１８が閉の状態という。）であり、図２に示す状態
が、搬入口１０ａ，搬出口１０ｂが開いている状態（以
下、それぞれ、搬入シャッター１７が開の状態，搬出シ
ャッター１８が開の状態という。）である。搬入シャッ
ター１７，搬出シャッター１８が閉の状態のときには、
搬入シャッター１７，搬出シャッター１８が搬入口１０
ａ，搬出口１０ｂを塞ぐ。搬入シャッター１７，搬出シ
ャッター１８が開の状態のときには、搬入シャッター１
７，搬出シャッター１８が搬入口１０ａ，搬出口１０ｂ
と高さ方向にずれるので、搬入口１０ａ，搬出口１０ｂ
を介した基板の搬入，搬出が可能となる。Loading shutter 17 and loading shutter 18
Are used for loading and unloading substrates, respectively.
a, opening and closing the carry-out port 10b; The state shown in FIG. 1 is a state in which the carry-in entrance 10a and the carry-out exit 10b are closed (hereinafter, referred to as a state in which the carry-in shutter 17 is closed and a state in which the carry-out shutter 18 is closed, respectively), and is a state shown in FIG. Shows a state in which the carry-in entrance 10a and the carry-out exit 10b are open (hereinafter, referred to as a state in which the carry-in shutter 17 is open and a state in which the carry-out shutter 18 is open, respectively). When the carry-in shutter 17 and the carry-out shutter 18 are closed,
The carry-in shutter 17 and the carry-out shutter 18 are the carry-in entrance 10.
a, Close the exit 10b. When the carry-in shutter 17 and the carry-out shutter 18 are open, the carry-in shutter 1
7. The carry-out shutter 18 is the carry-in entrance 10a and the carry-out exit 10b.
And the height direction, the carry-in port 10a and the carry-out port 10b
The substrate can be loaded and unloaded via the.
【００２０】また、図３に示すように、搬入シャッター
１７，搬出シャッター１８が開の状態であるか閉の状態
であるかを検出する搬入シャッター開閉検知手段１７
ａ，搬出シャッター開閉検知手段１８ａが設けられてい
る。搬入シャッター１７や搬出シャッター１８の開閉に
ついては、これらを開閉するための制御信号によって判
断することも可能であるが、ここではより確実に実際の
開閉を確認するために搬入シャッター開閉検知手段１７
ａ，搬出シャッター開閉検知手段１８ａを設けている。
具体的には、機械式のリミットスイッチや光学式の光セ
ンサー等が用いられる。As shown in FIG. 3, a carry-in shutter open / close detecting means 17 for detecting whether the carry-in shutter 17 and the carry-out shutter 18 are open or closed.
a, a carry-out shutter open / close detecting means 18a is provided. The opening / closing of the carry-in shutter 17 and the carry-out shutter 18 can be determined by a control signal for opening / closing them, but here, in order to more surely confirm the actual opening / closing, the carry-in shutter open / close detecting means 17 is used.
a, a discharge shutter open / close detecting means 18a is provided.
Specifically, a mechanical limit switch, an optical light sensor, or the like is used.
【００２１】次に、排気ダンパー１３の制御について説
明する。排気配管１２に設けられた排気ダンパー１３
は、その開度を変更することによって、排気配管１２の
流路抵抗を増減することができる。排気ダンパー１３の
開度を大きくすると、排気配管１２の流路抵抗が減少
し、排気ダクトに排気される剥離処理チャンバー１０内
の雰囲気の排気量が大きくなる。排気ダンパー１３の開
度を小さくすると、排気配管１２の流路抵抗が増大し、
排気ダクトに排気される剥離処理チャンバー１０内の雰
囲気の排気量が小さくなる。この排気ダンパー１３の開
度は、図３に示す排気ダンパー制御部（制御手段）１５
の制御信号によって変更される。Next, control of the exhaust damper 13 will be described. Exhaust damper 13 provided in exhaust pipe 12
By changing the opening degree, the flow path resistance of the exhaust pipe 12 can be increased or decreased. When the opening degree of the exhaust damper 13 is increased, the flow resistance of the exhaust pipe 12 decreases, and the amount of exhaust of the atmosphere in the separation processing chamber 10 exhausted to the exhaust duct increases. When the opening degree of the exhaust damper 13 is reduced, the flow resistance of the exhaust pipe 12 increases,
The amount of exhaust in the atmosphere in the separation processing chamber 10 exhausted to the exhaust duct is reduced. The opening degree of the exhaust damper 13 is controlled by an exhaust damper control unit (control means) 15 shown in FIG.
Is changed by the control signal.
【００２２】排気ダンパー制御部１５は、図３に示すよ
うに、搬入シャッター開閉検知手段１７ａ、搬出シャッ
ター開閉検知手段１８ａ、及び圧力計１４の検知結果あ
るいは測定結果を基に、排気ダンパー１３に対して開度
調整の指令を与える。この排気ダンパー制御部１５が行
う排気ダンパー開度制御を図４に示す。ここでは、ま
ず、ステップＳ１において、搬入シャッター１７が閉の
状態であるか否かを、搬入シャッター開閉検知手段１７
ａの検知結果から判断する。搬入シャッター１７が閉の
状態であれば、ステップＳ２に移行して、搬出シャッタ
ー１８が閉の状態であるか否かを、搬出シャッター開閉
検知手段１８ａの検知結果から判断する。搬出シャッタ
ー１８が閉の状態であれば、すなわち、搬入及び搬出シ
ャッター１７，１８が共に閉の状態のときには、ステッ
プＳ３に移行する。ステップＳ３では、圧力計１４によ
り測定された剥離処理チャンバー１０内の圧力Ｐが、予
め設定されている適正処理中圧力の上限圧力Ｐ１よりも
大きいか否かを判断する。圧力Ｐが上限圧力Ｐ１よりも
小さければ、ステップＳ４に移行して、圧力Ｐが、予め
設定されている適正処理中圧力の下限圧力Ｐ２よりも小
さいか否かを判断する。ステップＳ４で圧力Ｐが下限圧
力Ｐ２よりも大きいと判断されると、すなわち、圧力Ｐ
が下限圧力Ｐ２と上限圧力Ｐ１との間の範囲にある場合
には、排気ダンパー１３に指令を出さずに、ステップＳ
１に戻る。As shown in FIG. 3, the exhaust damper control unit 15 controls the exhaust damper 13 based on the detection result or measurement result of the carry-in shutter open / close detecting means 17a, the carry-out shutter open / close detecting means 18a, and the pressure gauge 14. Command for opening adjustment. FIG. 4 shows the exhaust damper opening degree control performed by the exhaust damper control unit 15. Here, first, in step S1, whether or not the carry-in shutter 17 is closed is determined by the carry-in shutter open / close detecting means 17.
Judge from the detection result of a. If the carry-in shutter 17 is in the closed state, the process proceeds to step S2, and it is determined whether or not the carry-out shutter 18 is in the closed state based on the detection result of the carry-out shutter open / close detecting means 18a. If the carry-out shutter 18 is closed, that is, if the carry-in and carry-out shutters 17 and 18 are both closed, the process proceeds to step S3. In step S3, it is determined whether or not the pressure P in the peeling processing chamber 10 measured by the pressure gauge 14 is higher than a preset upper limit pressure P1 of the proper processing pressure. If the pressure P is smaller than the upper limit pressure P1, the process proceeds to step S4, and it is determined whether the pressure P is smaller than a preset lower limit pressure P2 of the appropriate processing pressure. If it is determined in step S4 that the pressure P is greater than the lower limit pressure P2, that is, the pressure P
Is in the range between the lower limit pressure P2 and the upper limit pressure P1, the command is not issued to the exhaust damper 13 and step S
Return to 1.
【００２３】上記の適正処理中圧力（上限圧力Ｐ１、下
限圧力Ｐ２）は、搬入及び搬出シャッター１７，１８を
閉め基板に高温の剥離液を噴射して剥離処理を施してい
るときに、剥離処理チャンバー１０内の剥離液のミスト
や蒸気を多量に含んだ雰囲気を過剰に排気してしまわな
いように、且つこの雰囲気が隣接する処理チャンバー２
０，３０等に漏れ出さないようにするために設定される
剥離処理チャンバー１０内の圧力である。この適正処理
中圧力は、上限圧力Ｐ１から下限圧力Ｐ２までの範囲の
圧力として、ある程度幅を持って設定されており、隣接
する処理チャンバー２０，３０内の圧力よりも若干小さ
く設定されている。The above-mentioned proper processing pressures (upper limit pressure P1 and lower limit pressure P2) are determined when the carry-in and carry-out shutters 17 and 18 are closed and a high-temperature release liquid is sprayed on the substrate to perform the release processing. An atmosphere containing a large amount of mist or vapor of the stripping solution in the chamber 10 is not excessively evacuated, and this atmosphere is adjacent to the adjacent processing chamber 2.
This is the pressure in the peeling processing chamber 10 that is set so as not to leak to 0, 30, and the like. The appropriate processing pressure is set as a pressure in the range from the upper limit pressure P1 to the lower limit pressure P2 with a certain width, and is set slightly lower than the pressure in the adjacent processing chambers 20 and 30.
【００２４】ステップＳ１において搬入シャッター１７
が開であると判断されたとき、あるいはステップＳ２に
おいて搬出シャッター１８が開であると判断されたとき
には、ステップＳ５に移行して、排気ダンパー制御部１
５から排気ダンパー１３に開度１００％（全開）の指令
が送られる。これにより、図２に示すように排気ダンパ
ー１３が全開となり、排気ダクトのドラフトによって剥
離処理チャンバー１０内の雰囲気が大量に排気される。
この場合には、搬入口１０ａや搬出口１０ｂを通って剥
離処理チャンバー１０内に隣接する処理チャンバー２
０，３０の雰囲気が剥離処理チャンバー１０内に侵入し
てくるが、高温かつ剥離液のミスト等を多量に含んだ剥
離処理チャンバー１０内の雰囲気が搬入口１０ａや搬出
口１０ｂから処理チャンバー２０，３０に漏れ出すこと
を防止することが優先されている。In step S1, the carry-in shutter 17
Is determined to be open, or when it is determined in step S2 that the carry-out shutter 18 is open, the process proceeds to step S5 and the exhaust damper control unit 1 is controlled.
From 5, a command to open 100% (fully open) is sent to the exhaust damper 13. As a result, the exhaust damper 13 is fully opened as shown in FIG. 2, and a large amount of the atmosphere in the separation processing chamber 10 is exhausted by the draft of the exhaust duct.
In this case, the processing chamber 2 adjacent to the inside of the peeling processing chamber 10 through the loading port 10a or the loading port 10b.
The atmospheres 0 and 30 enter the stripping chamber 10, but the atmosphere in the stripping chamber 10 that is high in temperature and contains a large amount of mist of the stripping liquid flows from the loading port 10a or the loading port 10b to the processing chamber 20, Priority is given to preventing leakage to 30.
【００２５】ステップＳ３において圧力Ｐが上限圧力Ｐ
１よりも大きいと判断されると、ステップＳ６に移行し
て、排気ダンパー制御部１５から排気ダンパー１３に開
度を大きくするという指令が送られる。これにより、排
気ダンパー１３の開度が大きくなり、排気ダクトに排気
される排気量が増え、剥離処理チャンバー１０内の圧力
Ｐが下がる。排気ダンパー１３の開度をどれだけ大きく
するかについては、圧力Ｐと上限圧力Ｐ１との差の大き
さに連動させるのが望ましい。このように圧力Ｐが上限
圧力Ｐ１よりも大きいときに圧力Ｐを下げるような制御
を行うため、剥離処理チャンバー１０内の雰囲気が搬入
口１０ａや搬出口１０ｂから処理チャンバー２０，３０
に漏れ出すことが抑えられる。In step S3, the pressure P is equal to the upper limit pressure P
If it is determined that it is larger than 1, the process proceeds to step S6, and a command to increase the opening is sent from the exhaust damper control unit 15 to the exhaust damper 13. As a result, the opening degree of the exhaust damper 13 increases, the amount of exhaust exhausted to the exhaust duct increases, and the pressure P in the separation processing chamber 10 decreases. It is desirable that the degree of opening of the exhaust damper 13 be increased in accordance with the difference between the pressure P and the upper limit pressure P1. As described above, when the pressure P is higher than the upper limit pressure P1, control is performed to decrease the pressure P. Therefore, the atmosphere in the peeling processing chamber 10 is changed from the loading port 10a or the loading port 10b to the processing chambers 20, 30.
Leakage is suppressed.
【００２６】ステップＳ４において圧力Ｐが下限圧力Ｐ
２よりも小さいと判断されると、ステップＳ７に移行し
て、排気ダンパー制御部１５から排気ダンパー１３に開
度を小さくするという指令が送られる。これにより、排
気ダンパー１３の開度が小さくなり、排気ダクトに排気
される排気量が減り、剥離処理チャンバー１０内の圧力
Ｐが上がる。排気ダンパー１３の開度をどれだけ小さく
するかについては、圧力Ｐと下限圧力Ｐ２との差の大き
さに連動させるのが望ましい。このように圧力Ｐが下限
圧力Ｐ２よりも小さいときに圧力Ｐを上げるような制御
を行うため、剥離処理チャンバー１０内の剥離液のミス
ト等を多量に含んだ雰囲気が過剰に排気されることが抑
えられる。In step S4, the pressure P is equal to the lower limit pressure P
If it is determined that it is smaller than 2, the process proceeds to step S7, and the exhaust damper control unit 15 sends a command to the exhaust damper 13 to reduce the opening. As a result, the opening degree of the exhaust damper 13 decreases, the amount of exhaust exhausted to the exhaust duct decreases, and the pressure P in the separation processing chamber 10 increases. It is desirable that the degree of opening of the exhaust damper 13 be reduced in accordance with the difference between the pressure P and the lower limit pressure P2. As described above, when the pressure P is smaller than the lower limit pressure P2, control is performed to increase the pressure P, so that an atmosphere containing a large amount of mist of the stripping liquid in the stripping chamber 10 may be excessively exhausted. Can be suppressed.
【００２７】ここでは、剥離処理チャンバー１０からの
排気量を、排気ダンパー制御部１５による排気ダンパー
１３の開度調整によって制御して、剥離処理チャンバー
１０内の雰囲気が搬入口１０ａや搬出口１０ｂから処理
チャンバー２０，３０に流出しないようにする一方、剥
離処理チャンバー１０内の雰囲気とともに排気ダクトに
排気される剥離液の量を減らしている。Here, the amount of exhaust from the stripping chamber 10 is controlled by adjusting the degree of opening of the exhaust damper 13 by the exhaust damper control unit 15 so that the atmosphere in the stripping chamber 10 can be controlled from the carry-in port 10a and the carry-out port 10b. The amount of the stripping liquid exhausted to the exhaust duct together with the atmosphere in the stripping processing chamber 10 is reduced while preventing the outflow into the processing chambers 20 and 30.
【００２８】具体的には、搬入口１０ａあるいは搬出口
１０ｂが開いているときには排気ダンパー１３を全開に
して排気を行い、搬入口１０ａ及び搬出口１０ｂが閉ま
っているときには排気ダンパー１３を適当に絞って（開
度を小さくして）排気量が少なくなるように制御してい
る。これにより、搬入口１０ａあるいは搬出口１０ｂが
開いていて剥離処理チャンバー１０内の雰囲気が隣接す
る処理チャンバー２０，３０に流出する恐れの大きいと
きには、剥離処理チャンバー１０内の雰囲気を大量に排
気して剥離処理チャンバー１０内の雰囲気の隣接する処
理チャンバー２０，３０への流出を抑え、搬入口１０ａ
及び搬出口１０ｂが閉まっていて剥離処理チャンバー１
０内の雰囲気が隣接する処理チャンバー２０，３０に流
出する恐れの小さいときには、排気量を絞って剥離処理
チャンバー１０内から排気によって持ち出される剥離液
の量を抑えている。Specifically, when the carry-in entrance 10a or the carry-out exit 10b is open, the exhaust damper 13 is fully opened to perform exhaust, and when the carry-in entrance 10a and the carry-out exit 10b are closed, the exhaust damper 13 is appropriately throttled. Control (by reducing the opening) to reduce the displacement. Accordingly, when the carry-in port 10a or the carry-out port 10b is open and the atmosphere in the stripping processing chamber 10 is likely to flow out to the adjacent processing chambers 20 and 30, the atmosphere in the stripping processing chamber 10 is exhausted in large quantities. The atmosphere in the separation processing chamber 10 is prevented from flowing out to the adjacent processing chambers 20 and 30, and the carry-in port 10a is controlled.
And the release port 10b is closed and the peeling processing chamber 1 is closed.
When there is little possibility that the atmosphere in the chamber 0 will flow out into the adjacent processing chambers 20 and 30, the amount of the stripping solution taken out by the exhaust from the stripping chamber 10 is suppressed by narrowing the exhaust amount.
【００２９】なお、ここではステップＳ３，Ｓ６及びス
テップＳ４，Ｓ７によって剥離処理チャンバー１０内の
圧力が所定範囲に収まるように制御しているが、搬入口
１０ａおよび、搬出口１０ｂを共に閉めた状態で、剥離
処理チャンバー１０内の圧力が所定範囲になるような排
気ダンパー１３の開度を予め求めておいた上で、搬入口
１０ａ、または、搬出口１０ｂが開いた状態では排気ダ
ンパー１３を全開にし、搬入口１０ａおよび、搬出口１
０ｂが共に閉まった状態では排気ダンパー１３の開度を
前記予め求めた開度にしてもよい。Here, in steps S3 and S6 and steps S4 and S7, the pressure in the separation processing chamber 10 is controlled so as to be within a predetermined range, but the state in which both the entrance 10a and the exit 10b are closed. Then, the opening degree of the exhaust damper 13 is determined in advance so that the pressure in the peeling processing chamber 10 falls within a predetermined range, and the exhaust damper 13 is fully opened when the carry-in port 10a or the carry-out port 10b is open. And the carry-in port 10a and the carry-out port 1
In a state where both the valves 0b are closed, the opening degree of the exhaust damper 13 may be set to the previously determined opening degree.
【００３０】このように、ここでは、搬入口１０ａ及び
搬出口１０ｂが閉まっているときには排気量を絞っても
剥離処理チャンバー１０内の雰囲気が隣接する処理チャ
ンバー２０，３０に流出する恐れが小さいことに着目し
て、排気配管１２に排気ダンパー１３を設けるととも
に、搬入口１０ａ及び搬出口１０ｂを閉めたときに排気
量が少なくなるように排気ダンパー１３の開度を制御し
ている。As described above, when the carry-in port 10a and the carry-out port 10b are closed, even if the exhaust amount is reduced, the possibility that the atmosphere in the separation processing chamber 10 flows out to the adjacent processing chambers 20, 30 is small. In addition to focusing on (1), the exhaust damper 13 is provided in the exhaust pipe 12, and the opening degree of the exhaust damper 13 is controlled so that the exhaust amount is reduced when the carry-in port 10a and the carry-out port 10b are closed.
【００３１】また、ここでは、剥離処理チャンバー１０
の排気量を自動制御できるようにして、排気によって剥
離処理チャンバー１０外に持ち出される剥離液の量を抑
制している。このように、約８０℃の高温の剥離液を供
給して処理が行われる剥離処理では特に、剥離処理チャ
ンバー１０内に剥離液の蒸気やミストが多量に存在す
る。しかし、剥離処理チャンバー１０の排気量を少なく
しているので剥離液の節約や排気された剥離液の処理コ
スト削減の効果が大きい。Also, here, the peeling processing chamber 10
The amount of the stripping liquid brought out of the stripping chamber 10 by the exhaustion is suppressed by automatically controlling the amount of exhaust gas. As described above, particularly in the stripping process in which the process is performed by supplying the stripping solution having a high temperature of about 80 ° C., a large amount of vapor or mist of the stripping solution is present in the stripping chamber 10. However, since the exhaust amount of the stripping chamber 10 is reduced, the effect of saving the stripping solution and reducing the processing cost of the stripped stripping solution is great.
【００３２】また、同じく約５０℃の高温のエッチング
液を供給して処理が行われるエッチング処理を行うエッ
チング処理チャンバーに本発明を適用すれば、同様にエ
ッチング液の節約や排気されたエッチング液の処理コス
ト削減の効果が大きい。このように、常温以上の温度の
処理液を供給する処理において本発明を適用すると、処
理液を節約でき、排気された処理液の処理コスト削減の
効果が大きい。また、常温の処理液を供給する他の処理
チャンバー、例えば洗浄処理チャンバー，現像処理チャ
ンバーの排気量についても、これを自動制御して排気量
を適正に制御すれば、同様に処理液の節約等の効果が得
られる。Further, if the present invention is applied to an etching chamber for performing an etching process in which a high-temperature etching solution of about 50 ° C. is supplied, the etching solution can be saved and the exhausted etching solution can be similarly reduced. Great effect of reducing processing cost. As described above, when the present invention is applied to the processing for supplying the processing liquid having the temperature equal to or higher than the normal temperature, the processing liquid can be saved, and the effect of reducing the processing cost of the exhausted processing liquid is great. Also, with regard to the exhaust amount of other processing chambers for supplying a processing liquid at room temperature, for example, the cleaning processing chamber and the developing processing chamber, if the exhaust amount is automatically controlled and the exhaust amount is appropriately controlled, the processing liquid can be similarly saved. The effect of is obtained.
【００３３】なお、本実施形態では基板を１枚ずつ処理
する枚葉式の基板処理装置に本発明を適用したが、複数
の基板を一括して処理を施す基板処理装置に本発明を適
用してもよい。In the present embodiment, the present invention is applied to a single-wafer type substrate processing apparatus for processing substrates one by one. However, the present invention is applied to a substrate processing apparatus for processing a plurality of substrates collectively. You may.
【００３４】[0034]
【発明の効果】本発明では、排気量を制御することがで
きる構造を採り、排気量を制御して処理チャンバーの内
部の雰囲気が開口から処理チャンバーの外部に出ないよ
うにしているので、処理チャンバーの内部の雰囲気が開
口から処理チャンバーの外部に出ない範囲で適正に排気
量を制御することにより、処理チャンバー内の雰囲気と
ともに排気される処理液の量を減らすことができる。According to the present invention, a structure capable of controlling the amount of exhaust gas is employed, and the amount of exhaust gas is controlled so that the atmosphere inside the processing chamber does not come out of the processing chamber through the opening. By appropriately controlling the exhaust amount within a range in which the atmosphere inside the chamber does not come out of the processing chamber through the opening, the amount of the processing liquid exhausted together with the atmosphere in the processing chamber can be reduced.
【図１】本発明の一実施形態における基板処理装置の剥
離処理チャンバーの概略図。FIG. 1 is a schematic view of a separation processing chamber of a substrate processing apparatus according to an embodiment of the present invention.
【図２】剥離処理チャンバーの概略図。FIG. 2 is a schematic view of a peeling processing chamber.
【図３】排気ダンパーの制御図。FIG. 3 is a control diagram of an exhaust damper.
【図４】排気ダンパー開度の制御フロー図。FIG. 4 is a control flowchart of an exhaust damper opening.
【図５】従来の基板処理装置の概略図。FIG. 5 is a schematic diagram of a conventional substrate processing apparatus.
【図６】従来の基板処理装置の概略図。FIG. 6 is a schematic diagram of a conventional substrate processing apparatus.
１ 基板処理装置 １０ 剥離処理チャンバー（処理チャンバー） １０ａ 搬入口（開口） １０ｂ 搬出口（開口） １２ 排気配管（排気路） １３ 排気ダンパー（可変流路抵抗） １５ 排気ダンパー制御部（制御手段） １７ 搬入シャッター（開閉手段） １８ 搬出シャッター（開閉手段） ５０ 剥離液貯留槽（処理液貯留槽） DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Peeling processing chamber (processing chamber) 10a Carrying port (opening) 10b Carrying port (opening) 12 Exhaust pipe (exhaust path) 13 Exhaust damper (variable flow path resistance) 15 Exhaust damper control part (control means) 17 Loading shutter (opening / closing means) 18 Unloading shutter (opening / closing means) 50 Stripping liquid storage tank (treatment liquid storage tank)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/306 Ｈ０１Ｌ 21/30 ５６９Ａ 21/68 21/306 Ｊ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/306 H01L 21/30 569A 21/68 21/306 J
Claims (6)
し、処理液によって基板に処理を施す処理チャンバー
と、 前記処理チャンバーの内部の雰囲気を排気する排気手段
と、 前記処理チャンバーの内部の雰囲気が前記開口から前記
処理チャンバーの外部に出ないように、前記排気手段に
よる前記処理チャンバーの内部の雰囲気の排気量を制御
する制御手段と、を備えた基板処理装置。A processing chamber having an opening for loading or unloading a substrate, the processing chamber performing processing on the substrate with a processing liquid; an exhaust unit configured to exhaust an atmosphere inside the processing chamber; A substrate processing apparatus comprising: a control unit configured to control an exhaust amount of an atmosphere inside the processing chamber by the exhaust unit so that the atmosphere does not go out of the processing chamber from the opening.
え、 前記制御手段は、前記開閉手段によって前記開口を閉め
たときに前記排気手段による前記処理チャンバーの内部
の雰囲気の排気量が少なくなるように制御する、請求項
１に記載の基板処理装置。2. The apparatus according to claim 1, further comprising an opening / closing means for opening and closing the opening, wherein the control means reduces the amount of exhaust of the atmosphere inside the processing chamber by the exhaust means when the opening is closed by the opening / closing means. The substrate processing apparatus according to claim 1, wherein the control is performed.
処理チャンバーに接続される排気路を有しており、 前記制御手段は、前記可変流路抵抗によって、前記開閉
手段により前記開口を閉めたときに前記排気路を流れる
排気に対する流路抵抗が増加するように制御する、請求
項２に記載の基板処理装置。3. The exhaust means has an exhaust path including a variable flow path resistance and connected to the processing chamber. The control means uses the variable flow path resistance to open and close the opening by the opening / closing means. 3. The substrate processing apparatus according to claim 2, wherein control is performed such that flow path resistance to exhaust flowing through the exhaust path when closed is increased.
のできる自動開度調整手段である、請求項３に記載の基
板処理装置。4. The substrate processing apparatus according to claim 3, wherein said variable flow path resistance is an automatic opening adjustment means capable of adjusting an opening.
処理液によって基板に処理を施す処理チャンバーであ
る、請求項２から４のいずれかに記載の基板処理装置。5. The substrate processing apparatus according to claim 2, wherein said processing chamber is a processing chamber for processing a substrate with a processing liquid at a temperature equal to or higher than room temperature.
に設けられる処理液貯留槽と前記処理チャンバーとの間
を循環する、請求項１から５のいずれかに記載の基板処
理装置。6. The substrate processing apparatus according to claim 1, wherein the processing liquid circulates between a processing liquid storage tank provided outside the processing chamber and the processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11517998A JP3623654B2 (en) | 1998-04-24 | 1998-04-24 | Substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11517998A JP3623654B2 (en) | 1998-04-24 | 1998-04-24 | Substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11307499A true JPH11307499A (en) | 1999-11-05 |
| JP3623654B2 JP3623654B2 (en) | 2005-02-23 |
Family
ID=14656315
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11517998A Expired - Fee Related JP3623654B2 (en) | 1998-04-24 | 1998-04-24 | Substrate processing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3623654B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009016727A (en) * | 2007-07-09 | 2009-01-22 | Tokyo Electron Ltd | Substrate processing apparatus |
| US11967508B2 (en) | 2019-05-30 | 2024-04-23 | Ebara Corporation | Damper control system and damper control method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101241098B1 (en) * | 2010-08-16 | 2013-03-11 | 프리시스 주식회사 | Plasma process chamber |
-
1998
- 1998-04-24 JP JP11517998A patent/JP3623654B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009016727A (en) * | 2007-07-09 | 2009-01-22 | Tokyo Electron Ltd | Substrate processing apparatus |
| US11967508B2 (en) | 2019-05-30 | 2024-04-23 | Ebara Corporation | Damper control system and damper control method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3623654B2 (en) | 2005-02-23 |
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