JPH11304837A - Probe device - Google Patents

Probe device

Info

Publication number
JPH11304837A
JPH11304837A JP10116553A JP11655398A JPH11304837A JP H11304837 A JPH11304837 A JP H11304837A JP 10116553 A JP10116553 A JP 10116553A JP 11655398 A JP11655398 A JP 11655398A JP H11304837 A JPH11304837 A JP H11304837A
Authority
JP
Japan
Prior art keywords
probe
signal
strain sensor
control means
probe device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10116553A
Other languages
Japanese (ja)
Inventor
Takeo Tanaami
健雄 田名網
Yasushi Onoe
寧 尾上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP10116553A priority Critical patent/JPH11304837A/en
Publication of JPH11304837A publication Critical patent/JPH11304837A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To realize a probe device capable of controlling pressure force to an element to be constant. SOLUTION: This probe device for mechanically pressing the surface of an element 1 by a tip for obtaining electric contact with the element 1 to take out a signal to the external is provided with a probe 2, of which tip part is pressed to the element surface, a distortion sensor 4 installed on the probe 2, a position control means for position-controlling the probe 2, a drive means 6 provided between the probe 2 and the position control means 5 for moving the probe 2 vertically, and a control circuit 7 to control the drive means 6 based on a detection signal from the distortion sensor 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、LSI試験装置等
に用いられる信号検出用のプローブ装置に関して、特に
押し付け力を制御することが可能なプローブ装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe device for detecting a signal used in an LSI test device or the like, and more particularly to a probe device capable of controlling a pressing force.

【0002】[0002]

【従来の技術】従来のLSI試験装置等に用いられる信
号検出用のプローブ装置はLSI等の素子の表面にプロ
ーブの先端を機械的に押し付けることにより前記素子と
の電気的接触を得て信号を外部に取り出すものである。
2. Description of the Related Art A signal detection probe device used in a conventional LSI test apparatus or the like mechanically presses the tip of a probe against the surface of an element such as an LSI, thereby obtaining electrical contact with the element and transmitting a signal. It is taken out.

【0003】図2はこのような従来のプローブ装置の一
例を示す構成断面図である。図2において1はLSI等
の素子、2はプローブ、3はアクチュエータ等の位置制
御手段、100は外部に取り出された電気信号である。
FIG. 2 is a sectional view showing an example of such a conventional probe device. In FIG. 2, 1 is an element such as an LSI, 2 is a probe, 3 is position control means such as an actuator, and 100 is an electric signal taken out.

【0004】プローブ2は位置制御手段3に取り付けら
れ、位置制御手段3によりプローブ2の位置制御がさ
れ、プローブ2自身のバネ性により生じる押し付け力に
よりプローブ2の先端部分が素子1に接触して電気的接
触が得られる。また、プローブ2からは素子1から検出
した電気信号100が外部に出力される。
The probe 2 is attached to the position control means 3, and the position of the probe 2 is controlled by the position control means 3. The tip of the probe 2 comes into contact with the element 1 by the pressing force generated by the spring property of the probe 2 itself. Electrical contact is obtained. The probe 2 outputs an electric signal 100 detected from the element 1 to the outside.

【0005】[0005]

【発明が解決しようとする課題】しかし、図2に示す従
来例では素子1に対する押し付け力がプローブ2自身の
バネ性により発生するため、その押し付け力は一定では
ない。このため、前記押し付け力が過大なために素子1
に損傷が生じたり、若しくは、前記押し付け力が弱いた
めに十分な接触が得られず接触不良を起こす場合もある
と言った問題点があった。
However, in the conventional example shown in FIG. 2, since the pressing force against the element 1 is generated by the spring property of the probe 2 itself, the pressing force is not constant. Therefore, the element 1
There has been a problem that damage may occur, or insufficient contact may not be obtained due to the weak pressing force, resulting in poor contact.

【0006】特に、複数のプローブをアレイ化して1つ
の位置制御手段で位置制御する場合には、個々のプロー
ブのバネ性のばらつきによって素子への個々の押し付け
力がばらついてしまうと言った課題があった。従って本
発明が解決しようとする課題は、素子への押し付け力を
一定に制御することが可能なプローブ装置を実現するこ
とにある。
[0006] In particular, when a plurality of probes are arrayed and the position is controlled by one position control means, there is a problem that individual pressing forces to the elements vary due to variations in spring characteristics of the individual probes. there were. Therefore, an object to be solved by the present invention is to realize a probe device capable of controlling a pressing force to an element to a constant value.

【0007】[0007]

【課題を解決するための手段】このような課題を達成す
るために、本発明のうち請求項1記載の発明は、素子の
表面に先端を機械的に押し付けることにより前記素子と
の電気的接触を得て信号を外部に取り出すプローブ装置
において、先端部分を前記素子表面に押し付けるプロー
ブと、このプローブに取り付けられた歪センサと、前記
プローブの位置制御をする位置制御手段と、前記プロー
ブと前記位置制御手段との間に設けられ前記プローブを
上下させる駆動手段と、前記歪センサからの検出信号に
基づき前記駆動手段を制御する制御回路とを備えたこと
により、素子への押し付け力を一定に制御することが可
能になる。
In order to achieve the above object, according to the first aspect of the present invention, an electric contact with the element is made by mechanically pressing a tip against the surface of the element. A probe for pressing a tip portion against the element surface, a strain sensor attached to the probe, position control means for controlling the position of the probe, the probe and the position Control means for controlling the driving means based on a detection signal from the strain sensor is provided, the driving force being provided between the control means and the drive means for raising and lowering the probe, thereby controlling the pressing force to the element to be constant. It becomes possible to do.

【0008】請求項2記載の発明は、請求項1記載の発
明であるプローブ装置において、前記プローブと前記歪
センサを一体形成したことにより小型化が可能になる。
According to a second aspect of the present invention, in the probe device according to the first aspect of the present invention, the probe and the strain sensor are integrally formed, so that the size can be reduced.

【0009】請求項3記載の発明は、請求項1記載の発
明であるプローブ装置において、前記歪センサが、ピエ
ゾ素子、若しくは、振動式歪ゲージであることにより、
素子への押し付け力を一定に制御することが可能にな
る。
According to a third aspect of the present invention, in the probe device according to the first aspect, the strain sensor is a piezo element or a vibration type strain gauge.
It is possible to control the pressing force on the element to be constant.

【0010】請求項4記載の発明は、請求項1記載の発
明であるプローブ装置において、前記駆動手段が、ピエ
ゾ素子、若しくは、磁気式モータであることにより、素
子への押し付け力を一定に制御することが可能になる。
According to a fourth aspect of the present invention, in the probe device according to the first aspect of the present invention, the driving means is a piezo element or a magnetic motor, so that the pressing force on the element is controlled to be constant. It becomes possible to do.

【0011】[0011]

【発明の実施の形態】以下本発明を図面を用いて詳細に
説明する。図1は本発明に係るプローブ装置の一実施例
を示す構成断面図である。図1において1及び2は図2
と同一符号を付してあり、4はピエゾ素子等の歪セン
サ、5は位置制御手段、6はピエゾ素子等の駆動手段、
7は制御回路,100aは電気信号、101は歪信号、
102は制御信号である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing the configuration of an embodiment of the probe device according to the present invention. 1 and 2 correspond to FIG.
4 is a strain sensor such as a piezo element, 5 is a position control means, 6 is a driving means such as a piezo element,
7 is a control circuit, 100a is an electric signal, 101 is a distortion signal,
102 is a control signal.

【0012】プローブ2は駆動手段6を介して位置制御
手段5に取り付けられ、また、プローブ2には歪センサ
4が固定され、プローブ2の先端部分は素子1に接触さ
れる。歪センサ4からの歪信号101は制御回路7に接
続され、制御回路7からの制御信号102は駆動手段に
接続される。また、プローブ2からは素子1から検出し
た電気信号100aが外部に出力される。
The probe 2 is attached to the position control means 5 via the driving means 6, and the strain sensor 4 is fixed to the probe 2, and the tip of the probe 2 is brought into contact with the element 1. The distortion signal 101 from the distortion sensor 4 is connected to the control circuit 7, and the control signal 102 from the control circuit 7 is connected to the driving means. The probe 2 outputs an electric signal 100a detected from the element 1 to the outside.

【0013】ここで、図1に示す実施例の動作を説明す
る。プローブ2は位置制御手段5により位置制御されプ
ローブ2自身のバネ性により生じる押し付け力によりプ
ローブ2の先端部分が素子1に接触する。
The operation of the embodiment shown in FIG. 1 will now be described. The position of the probe 2 is controlled by the position control means 5, and the tip of the probe 2 comes into contact with the element 1 by the pressing force generated by the spring property of the probe 2 itself.

【0014】この時、プローブ2に生じる歪を歪センサ
4が検出してその出力である歪信号101を制御回路7
に出力する。例えば、プローブ2のバネ性により生じる
押し付け力が大きい場合には歪センサ4で検出される歪
は大きくなり、逆に前記押し付け力が弱い場合には歪セ
ンサ4で検出される歪は小さくなる。
At this time, the distortion generated in the probe 2 is detected by the distortion sensor 4 and the output of the distortion signal 101 is output to the control circuit 7.
Output to For example, when the pressing force generated by the spring property of the probe 2 is large, the strain detected by the strain sensor 4 increases, and when the pressing force is weak, the strain detected by the strain sensor 4 decreases.

【0015】すなわち、制御回路7は歪センサ4からの
歪信号101が大きい場合には制御信号102により駆
動手段6を制御してプローブ2を上に移動させて押し付
け力を小さくし、歪信号101が小さい場合には制御信
号102により駆動手段6を制御してプローブ2を下に
移動させて押し付け力を大きくする。そして、歪センサ
4からの歪信号101が一定の値になった時点で電気信
号100aを外部に取り出す。
That is, when the distortion signal 101 from the distortion sensor 4 is large, the control circuit 7 controls the driving means 6 by the control signal 102 to move the probe 2 upward to reduce the pressing force, and the distortion signal 101 Is smaller, the driving means 6 is controlled by the control signal 102 to move the probe 2 downward to increase the pressing force. Then, when the distortion signal 101 from the distortion sensor 4 reaches a constant value, the electric signal 100a is extracted to the outside.

【0016】この結果、歪センサ4でプローブ2の歪を
検出し、その検出信号に基づき駆動手段6を制御してプ
ローブ2を上下させることにより、素子1に対する押し
付け力を一定に制御することが可能になる。
As a result, the strain of the probe 2 is detected by the strain sensor 4 and the driving means 6 is controlled based on the detected signal to move the probe 2 up and down, whereby the pressing force on the element 1 can be controlled to be constant. Will be possible.

【0017】なお、複数のプローブをアレイ化して1つ
の位置制御手段で位置制御する場合には、個々のプロー
ブに対して前述の歪センサ、ピエゾ素子及び制御回路を
設けて押し付け力を一定値に制御しても構わない。
When a plurality of probes are arrayed and the position is controlled by one position control means, the above-described strain sensor, piezo element, and control circuit are provided for each probe to keep the pressing force at a constant value. It may be controlled.

【0018】また、複数のプローブをアレイ化して1つ
の位置制御手段で位置制御する場合には、個々のプロー
ブに対して前述の歪センサ及びピエゾ素子を設けて1つ
の制御回路により押し付け力を一定値に制御しても構わ
ない。
When a plurality of probes are arrayed and the position is controlled by one position control means, the aforementioned strain sensor and piezo element are provided for each probe, and the pressing force is kept constant by one control circuit. The value may be controlled.

【0019】また、歪センサ4としてはピエゾ素子を例
示したが振動式歪ゲージ等であっても構わない。また、
位置制御手段6としてはピエゾ素子を例示したが磁気式
モータ等であっても構わない。
Further, the strain sensor 4 is exemplified by a piezo element, but may be a vibrating strain gauge or the like. Also,
The position control means 6 is exemplified by a piezo element, but may be a magnetic motor or the like.

【0020】また、プローブ2と歪センサ4を一体形成
することにより、小型化が可能になる。
Further, by integrally forming the probe 2 and the strain sensor 4, the size can be reduced.

【0021】[0021]

【発明の効果】以上説明したことから明らかなように、
本発明によれば次のような効果がある。請求項1,3及
び4の発明によれば、歪センサでプローブの歪を検出
し、その検出信号に基づき駆動手段を制御してプローブ
を上下させることにより、素子に対する押し付け力を一
定に制御することが可能なプローブ装置が実現できる。
As is apparent from the above description,
According to the present invention, the following effects can be obtained. According to the first, third and fourth aspects of the present invention, the strain sensor detects the strain of the probe and controls the driving means based on the detection signal to move the probe up and down, thereby controlling the pressing force against the element to be constant. And a probe device capable of performing such operations.

【0022】また、請求項2の発明によれば、プローブ
と歪センサとを一体形成することにより、小型化が可能
になる。
According to the second aspect of the present invention, the size of the probe can be reduced by integrally forming the probe and the strain sensor.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るプローブ装置の一実施例を示す構
成断面図である。
FIG. 1 is a sectional view showing a configuration of an embodiment of a probe device according to the present invention.

【図2】従来のプローブ装置の一例を示す構成断面図で
ある。
FIG. 2 is a configuration sectional view showing an example of a conventional probe device.

【符号の説明】[Explanation of symbols]

1 素子 2 プローブ 3,5 位置制御手段 4 歪センサ 6 駆動手段 7 制御回路 100,100a 電気信号 101 歪信号 102 制御信号 Reference Signs List 1 element 2 probe 3, 5 position control means 4 distortion sensor 6 driving means 7 control circuit 100, 100a electric signal 101 distortion signal 102 control signal

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】素子の表面に先端を機械的に押し付けるこ
とにより前記素子との電気的接触を得て信号を外部に取
り出すプローブ装置において、 先端部分を前記素子表面に押し付けるプローブと、 このプローブに取り付けられた歪センサと、 前記プローブの位置制御をする位置制御手段と、 前記プローブと前記位置制御手段との間に設けられ前記
プローブを上下させる駆動手段と、 前記歪センサからの検出信号に基づき前記駆動手段を制
御する制御回路とを備えたことを特徴とするプローブ装
置。
1. A probe device for mechanically pressing a tip against a surface of an element to obtain electrical contact with the element and take out a signal to the outside, comprising: a probe for pressing a tip portion to the surface of the element; An attached strain sensor, position control means for controlling the position of the probe, driving means provided between the probe and the position control means for moving the probe up and down, based on a detection signal from the strain sensor. And a control circuit for controlling the driving means.
【請求項2】前記プローブと前記歪センサを一体形成し
たことを特徴とする請求項1記載のプローブ装置。
2. The probe device according to claim 1, wherein said probe and said strain sensor are integrally formed.
【請求項3】前記歪センサがピエゾ素子、若しくは、振
動式歪ゲージであることを特徴とする請求項1記載のプ
ローブ装置。
3. The probe device according to claim 1, wherein the strain sensor is a piezo element or a vibrating strain gauge.
【請求項4】前記駆動手段がピエゾ素子、若しくは、磁
気式モータであることを特徴とする請求項1記載のプロ
ーブ装置。
4. The probe device according to claim 1, wherein said driving means is a piezo element or a magnetic motor.
JP10116553A 1998-04-27 1998-04-27 Probe device Pending JPH11304837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10116553A JPH11304837A (en) 1998-04-27 1998-04-27 Probe device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10116553A JPH11304837A (en) 1998-04-27 1998-04-27 Probe device

Publications (1)

Publication Number Publication Date
JPH11304837A true JPH11304837A (en) 1999-11-05

Family

ID=14689975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10116553A Pending JPH11304837A (en) 1998-04-27 1998-04-27 Probe device

Country Status (1)

Country Link
JP (1) JPH11304837A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065441A1 (en) * 2002-01-30 2003-08-07 Tokyo Electron Limited Prober
KR100634552B1 (en) 2005-11-24 2006-10-16 삼성전자주식회사 Electrical field sensing probe having separated sensor and information storing device having the same
JP2012054526A (en) * 2010-09-01 2012-03-15 Star Technologies Inc High speed probing apparatus for semiconductor device and probe stage therefor
WO2014034655A1 (en) * 2012-08-31 2014-03-06 日本電気株式会社 Optical probe, inspection device, and inspection method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065441A1 (en) * 2002-01-30 2003-08-07 Tokyo Electron Limited Prober
US6933736B2 (en) 2002-01-30 2005-08-23 Tokyo Electron Limited Prober
KR100634552B1 (en) 2005-11-24 2006-10-16 삼성전자주식회사 Electrical field sensing probe having separated sensor and information storing device having the same
JP2012054526A (en) * 2010-09-01 2012-03-15 Star Technologies Inc High speed probing apparatus for semiconductor device and probe stage therefor
WO2014034655A1 (en) * 2012-08-31 2014-03-06 日本電気株式会社 Optical probe, inspection device, and inspection method
JPWO2014034655A1 (en) * 2012-08-31 2016-08-08 日本電気株式会社 Optical probe, inspection device, inspection method
US10451520B2 (en) 2012-08-31 2019-10-22 Nec Corporation Optical probe, inspection device, and inspection method

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