JPH11304729A - X-ray measurement method and x-ray measurement device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an X-ray measurement method and an X-ray measurement device that can totally grasp the crystal orientation property and mosaic property and the state of the interval between surfaces of crystal surfaces that are vertical to the surface of a sample to be measured. SOLUTION: An X-ray source 2, a goniometer device 3 with a traveling mechanism in three directions x, y, and z of at least a sample 10 to be measured and a rotary mechanism in one direction ω, an X-ray detector 4 for detecting X rays Xd being reflected by the sample 10, and an X-ray measuring device 1 with an X-ray rotary mechanism for changing directions θ and 2θ of the X-ray source 2 and the X-ray detector 3 for a measurement point M of the sample 10 to be measured are used, thus fixing a sample surface 10s so that it is vertical to the rotary mechanism of one direction ω and setting an incidence angle α of X rays to conditions for total reflection on the sample surface 10s.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring X-rays using total reflection and Bragg reflection, and relates to a method for measuring surface characteristics such as in-plane crystal orientation and in-plane mosaicity of a sample to be measured. The present invention relates to a suitable X-ray measurement method used for evaluation. Also,
The present invention relates to an X-ray measuring apparatus suitable for use in this X-ray measuring method.

[0002]

2. Description of the Related Art In a crystalline sample, a method of measuring a state in which a crystal orientation changes according to an internal position thereof, for example, a crystal orientation, a mosaic property, etc., is to move a sample to be measured around a rotation axis (so-called ω axis). The rocking curve method for measuring the X-ray intensity diffracted when the X-ray incident angle θ is changed while rotating the sample, or the rotation axis (so-called ω axis) of the sample to be measured
A reciprocal lattice mapping method is used in which the incident angle and the diffraction angle are measured while rotating about the angle, and the intensity distribution in the reciprocal lattice space is measured.

[0003] Methods for evaluating the state of lattice spacing in a crystal include, for example, the 2θ-ω method for measuring the diffraction angle from the crystal plane to be measured, the reflection on the (hkl) crystal plane, and the (−h− k-1) A method of measuring a crystal plane spacing by a bonding method for accurately scanning a crystal orientation satisfying a Bragg condition of reflection on a crystal plane is used.

On the other hand, by sequentially measuring the ω-2θ scan at each ω, the reciprocal lattice cross-sectional intensity distribution perpendicular to the surface of the sample to be measured near the reciprocal lattice point hkl with respect to the target (hkl) crystal plane is measured. Accordingly, there is a method of measuring the orientation and the mosaic property.

In the above-described method, the evaluation is performed by measuring the change of the crystal orientation and the spacing between the crystal planes inclined with respect to the surface of the sample to be measured or the crystal plane parallel to the surface of the sample to be measured. Is going.

[0006]

On the other hand, in the case of a crystal plane substantially perpendicular to the surface of the sample to be measured, the diffraction X-rays reflected by Bragg enter the inside of the sample to be measured. In the method (1), it is impossible to measure the diffraction X-ray.

Therefore, by reducing the incident angle α of the X-rays to the surface to cause total reflection of the X-rays at the surface and to cause Bragg reflection by a crystal plane perpendicular to the surface (so-called GIXS: minute Incident angle X-ray diffraction method), rocking curve method, 2θ-ω method (or ω-2θ)
Method) to evaluate the crystallinity.

Here, in the measurement of a sample in which a crystal plane substantially perpendicular to the surface of the sample includes regions having different plane spacings and the crystal orientation changes within the crystal surface, the above-mentioned GIXS
The rocking curve method and the 2θ-ω method are used to measure changes in crystal orientation and lattice spacing.

However, in the rocking curve method by GIXS, in a sample in which the lattice spacing is close and the crystal orientation changes slightly, there are two effects, that is, the effect due to the close lattice spacing and the effect due to the change in crystal orientation. Since the effects overlap, it is difficult to evaluate them separately.

[0010] On the other hand, in the 2θ-ω method by GIXS, although the lattice spacing can be distinguished, it is difficult to comprehensively grasp the change in the lattice spacing due to a slight difference in crystal orientation.

In the ordinary reciprocal lattice mapping, a reciprocal lattice point in a direction perpendicular to the surface or a reciprocal lattice point in a direction oblique to the surface is a reciprocal lattice cross section almost perpendicular to the surface, and in some cases, the surface is In order to measure the cross section inclined with respect to the surface, it is possible to know the change of the crystal plane orientation in the crystal plane parallel to the surface or inclined with respect to the surface. etc,
The change in crystal plane orientation cannot be measured.

In order to solve the above-mentioned problem, in the present invention, it is necessary to comprehensively grasp the crystal orientation, the mosaic property, and the plane spacing of a crystal plane perpendicular to the surface of the sample to be measured. An object of the present invention is to provide an X-ray measuring method and an X-ray measuring device that can be used.

[0013]

An X-ray measuring method according to the present invention comprises an X-ray source for generating X-rays to make it monochromatic, a mechanism for moving the sample to be measured in at least three directions, and a mechanism for rotating in one direction. A goniometer device, an X-ray detector for detecting the X-rays reflected by the sample to be measured, and an X-ray source and an X-ray detector for rotating the X-ray source and the X-ray detector in synchronization with each other to measure the measurement point of the sample to be measured. Using an X-ray measuring apparatus equipped with an X-ray rotating mechanism for changing the direction, the surface of the sample
The sample to be measured is fixed so as to be perpendicular to the rotation axis of the rotation mechanism of the direction, and the incident angle of the X-ray to the surface is set so that the X-ray from the X-ray source is totally reflected on the surface of the sample to be measured. Centering on the rotation angle of the rotation mechanism of the rotation mechanism of the sample to be measured and the rotation angle of the X-ray rotation mechanism satisfying the Bragg reflection condition in one crystal plane perpendicular to the surface of the sample to be measured, in a predetermined range of these two rotation angles, With one of the rotation angles set to a constant value, the other rotation mechanism is rotated and scanned to perform continuous or intermittent X-ray measurement by an X-ray detector, and the fixed value is changed.
Further, the other rotating mechanism is rotated and scanned to perform continuous or intermittent X-ray measurement by the X-ray detector. Thereafter, a change of a constant value and continuous or intermittent X-ray measurement are repeated, and finally 2 X in a two-dimensional area within a predetermined range of one rotation angle
The line intensity distribution is measured.

An X-ray measuring apparatus according to the present invention is a goniometer device having an X-ray source for generating and monochromating X-rays, a mechanism for moving a sample to be measured in at least three directions, and a rotating mechanism for one direction. An X-ray detector for detecting the X-rays reflected by the sample to be measured, and an X-ray detector for changing the direction of the sample to be measured relative to the measurement point by rotating the X-ray source and the X-ray detector in synchronization with each other. X comprising a line rotation mechanism, first rotation control means for controlling the rotation of the one-way rotation mechanism, and second rotation control means for controlling the rotation of the X-ray rotation mechanism.
A line measuring apparatus, wherein a rotation angle of a first rotation control unit, a rotation angle of a second rotation control unit, and a rotation angle of the first rotation control unit satisfying a Bragg reflection condition on one crystal surface of a sample to be measured. The scanning range of the rotation scanning by the first rotation control unit performed around the rotation angle and the scanning range of the rotation scanning by the second rotation control unit performed around the rotation angle of the second rotation control unit are defined by the control program. The control program is used to determine whether one of the first rotation control means and the second rotation control means has a constant value within the scanning range, Rotational scanning by the control means and continuous or intermittent X-ray measurement by the X-ray detector are performed, and a constant value in the scanning range of one rotation control means is set as a constant value changed in the scanning range, and the other rotation is adjusted. Control means Rotation scanning and continuous or intermittent X-ray measurement by the X-ray detector are repeated, and finally within the scanning range of the rotation scanning by the first rotation control means and by the second rotation control means The X-ray intensity distribution in a two-dimensional area within the scanning range is obtained.

According to the present invention described above, the X-ray incidence angle on the surface is set so that the X-rays from the X-ray source are totally reflected on the surface of the sample to be measured. X-rays due to black reflection on a perpendicular crystal plane can be measured, and a two-dimensional range within a predetermined range centered on the rotation angle of two rotation mechanisms that satisfies the black reflection condition on one crystal plane perpendicular to the surface of the sample to be measured. Since the X-ray intensity distribution in the region is measured, it is possible to accurately know the distribution of the change in the lattice spacing and the change in the in-plane orientation in the crystal plane perpendicular to the surface of the sample to be measured.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the concept of an X-ray measuring method according to the present invention will be described with reference to FIG. In FIG. 1, [10
Arrows indicated by [0] ^* , [010] ^* , and [001] ^* indicate unit vectors in the reciprocal lattice space in the x-axis direction, the y-axis direction, and the z-axis direction, respectively. And the plane created by the two unit vectors [100] ^* and [010] ^* is
It is parallel to the surface of the sample to be measured, which is usually the xy plane.

In FIG. 1, the unit vector [00]
1] The cross section Sz parallel to ^* is a reciprocal lattice cross section perpendicular to the surface of the sample to be measured. The cross section Sy parallel to the unit vector [010] ^* is a reciprocal lattice cross section parallel to the surface of the sample to be measured.

In the above-described conventional measuring method, the reciprocal lattice point 00 in the reciprocal lattice section Sz perpendicular to the surface of the sample to be measured in the figure is used.
The distribution of the diffraction X-ray intensity around the area No. 1 (shown by contour lines in the figure) was measured. However, the distribution of the diffraction X-ray intensity around the reciprocal lattice point 010 in the reciprocal lattice section Sy parallel to the surface of the sample to be measured could not be measured.

On the other hand, in the X-ray measuring method of the present invention, the distribution of the diffracted X-ray intensity around the reciprocal lattice point 010 in the reciprocal lattice section Sy parallel to the surface of the sample to be measured can be measured. Things.

Next, an embodiment of the X-ray measuring method of the present invention will be described. FIG. 2 shows a schematic configuration diagram of an X-ray diffraction measuring apparatus 1 applied to the implementation of the X-ray measuring method and the X-ray measuring apparatus of the present invention as an embodiment of the present invention.

The X-ray diffraction measuring apparatus 1 includes an X-ray source 2 for generating a sufficiently monochromatic X-ray Xo and making the X-ray Xo incident on a sample 10 to be measured, and measuring the orientation of the sample 10 and the inside of the sample 10 to be measured. It comprises a goniometer device 3 for setting the position and the like of the point M, and an X-ray detector 4 having a resolution for accurately measuring the direction of the diffracted X-ray Xd.

The monochromatic X-ray source 2 is not limited to synchrotron radiation. For example, a rotating anti-cathode X-ray generator or an X-ray generator using an X-ray tube may be used, and one or more crystals may be used. A collimator having a function of monochromaticizing and collimating X-rays, for example, a channel cut crystal 2 using a Ge (220) crystal plane
X-rays are monochromatic and collimated by a monochromator provided with a four-crystal collimator using the set.

As the collimator used in the monochromator, a crystal plane other than the (220) crystal plane of Ge, a crystal other than Ge, a two-crystal collimator using one channel cut crystal, Other collimators for achieving monochromaticity, such as a collimator using a single crystal plane, can also be used.

The above monochromatic X-rays are limited to only X-rays in the direction of the measurement position on the surface 10s of the sample 10 by a slit or the like, and are set as incident X-rays Xo on the surface 10s of the sample 10 to be measured. Irradiate.

The X-ray irradiating system including the X-ray source 2, the slit and the like is preferably configured so that the incident angle α of the incident X-ray Xo with respect to the surface 10s of the sample 10 to be measured can be changed by changing the inclination. I do. Note that, instead of changing the tilt of the X-ray irradiation system, the configuration may be such that the angle of incidence α can be changed by changing the tilt of the goniometer device 3.

The goniometer device 3 is provided with a ω rotation mechanism capable of rotating the sample 10 around at least a rotation axis substantially perpendicular to the surface 10 s of the sample 10 and a position of the sample 10. It has a moving mechanism in three directions of x-axis, y-axis, and z-axis configured to move a point to be measured of the sample 10 to be measured to an incident position of the incident X-ray Xo. Further, in the X-ray diffraction measuring apparatus 1 of FIG. 2, the sample 1 is further parallel to the surface 10 s of the sample 10 by a ψ rotation axis perpendicular to the ω rotation axis of the ω rotation mechanism.
It has a ψ rotation mechanism that can change the tilt angle of the surface of 0. Preferably, the rotation mechanism and the movement mechanism are configured to be independently movable.

The X-ray detector 4 is installed on a rotation mechanism (2θ rotation mechanism) that can rotate on the same rotation axis as the sample rotation mechanism (ω rotation mechanism) of the goniometer device 3 as a whole. Then, the diffraction angle (2θ) is configured to be able to be measured around the ω rotation axis and the ψ rotation axis.

The direction of the X-ray detector 4 is set such that the inclination angle with respect to the sample surface 10s is set to an angle α equal to the incident angle in accordance with the incident angle α. It is configured such that the diffracted X-ray Xd reflected by the crystal plane 11 perpendicular to the surface 10s under the black reflection condition can be detected.

As the X-ray detector 4, for example, a scintillation detector can be used, and a device having a function of accurately measuring the azimuth and diffraction angle (2θ) of diffracted X-rays (scattered X-rays) ahead of the scintillation detector can be used. For example, a configuration in which a so-called analyzer device is installed is adopted.

As the analyzer described above, for example, 1
It has an analyzer crystal using one or more crystals, and for example, a channel cut crystal using a Ge (220) plane can be used as the analyzer crystal. Note that an analyzer having a configuration other than the above-described configuration, such as a three-crystal or one-crystal analyzer, may be used as the analyzer.

The X-ray detector 4 may be a detector that can detect X-rays other than the diffracted X-ray Xd shown in FIG.

The X-ray source 2, the goniometer device 3, and the X-ray detector 4 are used to measure the crystal plane 11 perpendicular to the surface of the sample 10 according to the present invention at a specific point. At one point on the surface 10 s of the measurement sample 10, the θ rotation axis of the θ rotation mechanism of the X-ray source 2, the 2θ rotation axis, the ω rotation axis, and the ψ rotation axis of the 2θ rotation mechanism of the X-ray detector 4 are all this one point. It is arranged so that incident X-rays passing through M and coming from the X-ray source 2 are incident on this one point M. One point M on the surface 10s of the sample 10 is a measurement point of the sample 10 in the measurement of the X-ray diffraction intensity.

It should be noted that the 交 rotation axis may be configured so as not to pass through the intersection point between the rotation axis of the incident angle α and the ω rotation axis, that is, the above-mentioned measurement point M, but preferably, as shown in FIG. Of the measurement point M.

The rotation mechanisms of the θ rotation mechanism, the 2θ rotation mechanism, the ω rotation mechanism, the 及 び rotation mechanism, and the x, y, and z axis movement mechanisms are preferably controlled by a computer.
It is configured such that it can be rotated or scanned independently and automatically, and can be set at any angle and at any position.

By rotating the .theta. Rotation mechanism and the 2.theta. Rotation mechanism in synchronization with each other, as shown in FIG. 2, both the .theta.

Using such an X-ray diffraction measuring apparatus 1,
A case where the X-ray measurement method according to the present invention is performed will be described. The incident angle α is set to a shallow angle with respect to the measurement point M on the surface 10 s of the sample 10 so that total reflection occurs on the surface 10 s of the sample 10.

Then, the rotation angle ω of the ω rotation mechanism of the rotation of the sample 10 is set so as to satisfy the Bragg condition by the crystal plane 11 substantially perpendicular to the surface 10 s of the sample 10.
The rotation angle 2θ of the 2θ rotation mechanism of the detector 4 is set. Here, the surface 10s of the sample 10 to be measured is
It is desirable to adjust the ψ rotation axis so that it is perpendicular to the plane including the rotation axis, or so that the crystal plane 11 to be measured is parallel to the ω rotation axis and the 2θ rotation axis.

Then, the X-ray Xo is incident on the measuring point M at the set incident angle α, and at the same time, the rotation angle satisfying the Bragg reflection condition of the in-plane reflection of the crystal plane 11 to be measured, for example, the (hk0) crystal plane While changing the rotation angle ω in the vicinity of ω, successive ω-2θ scans are performed to measure the distribution of the diffracted X-ray intensity. That is, continuous or intermittent X-ray measurement by ω-2θ scan is performed with the rotation angle ω as a fixed value, the intensity distribution of diffracted X-rays is obtained by the X-ray detector 4, and the rotation angle ω is changed to change the rotation. Continuous or intermittent X-ray measurement is performed using the angle ω as another constant value, and this is repeated within a predetermined range of the rotation angle ω.

It should be noted that the same result can be obtained by performing the X-ray measurement by sequentially performing the ω scan for a constant value of ω−2θ.

Thus, it is possible to obtain the intensity distribution of the diffracted X-ray Xd in a two-dimensional area around the rotation angle ω under the Bragg reflection condition, within a predetermined range of the rotation angle ω and within a predetermined range of ω−2θ. That is, a two-dimensional intensity distribution near the reciprocal lattice point hk0 in the reciprocal lattice space can be obtained.

At this time, the measurement is performed by setting the value of the rotation angle ω, the range in which the rotation angle ω is changed, and the range of the ω-2θ scan satisfying the Bragg condition of the in-plane reflection of the crystal plane 11. To

Preferably, if the value of the rotation angle ω, the range in which the rotation angle ω is changed, and the range of the ω-2θ scan satisfying the Bragg condition of the in-plane reflection of the crystal plane 11 are given, the control program Depending on the rotation angle ω or ω−
One of the 2θ scans is fixed at a constant value, and the other is scanned to continuously measure the diffracted X-rays. The change of the constant value and the measurement of the diffracted X-rays are repeated, and finally these rotations are changed. The X-ray diffraction measurement apparatus 1 is configured to obtain an X-ray intensity distribution in a two-dimensional area within the range of the angle ω and the range of the ω-2θ scan.

The vertical axis is the ω axis and the horizontal axis is the ω-
By displaying the 2θ axis or vice versa, the intensity distribution in each direction can be grasped two-dimensionally. still,
The measurement result of the obtained distribution of the diffracted X-ray intensity can also be displayed by converting the vertical axis and the horizontal axis from the unit of the angle into the unit system (1/1 of the length) of the reciprocal lattice space.

The procedure of the above-described measurement is the same as the measurement by the ordinary reciprocal lattice mapping.

By performing the measurement as described above, the diffraction angle 2θ of the diffracted X-ray Xd can be resolved by utilizing the monochromaticity / parallelism of the incident X-ray Xo and the high accuracy of the X-ray detector 4. Measurements can be made well and precisely, and the diffraction X-ray intensity distribution near the reciprocal lattice point can be known two-dimensionally and finely.

This not only has the features of the ordinary reciprocal lattice mapping method, but also has an inverse parallel to the surface around the reciprocal lattice point hk0 substantially parallel to the surface 10s, which cannot be measured by the ordinary reciprocal lattice mapping method. Diffraction X at grating cross section
It has the feature that the distribution of line intensity can be measured. In addition, the rocking curve method in the above-mentioned GIXS makes it difficult to distinguish between them. The change in lattice constant and the change in crystal orientation can be displayed two-dimensionally.

Here, in the obtained two-dimensional diffraction X-ray intensity distribution, the spread and distribution in the ω-2θ scanning direction are as follows.
This shows how the lattice spacing changes. The spread and distribution in the ω scan direction indicate the state of the fluctuation distribution of the crystal orientation of the measured crystal plane 11.

In the case of a complicated structural material in which the variation of the crystal orientation and the lattice spacing are combined, the ω scan is repeated, or the ω-2θ scan is repeated.
In the one-dimensional measurement method such as this, there is a risk that a wrong understanding different from the actual structure may occur, but according to the measurement method described in the above-described embodiment, the two-dimensional information is comprehensively obtained. Is obtained, it is possible to avoid such a risk of misunderstanding.

Further, since the reciprocal lattice section Sy parallel to the surface can be measured, the state of the in-plane rotation change of the crystal plane 11 can be quantitatively measured separately from the in-plane lattice plane spacing.

FIG. 3 shows the result of actual measurement by the above-described X-ray measurement method of the present invention. The sample 10 used for the measurement in FIG. 3 is a GaN (gallium nitride) epitaxially grown crystal grown on a sapphire substrate.

FIG. 3 shows a rotation angle ω and a rotation angle 2θ satisfying the Bragg condition of the crystal plane 11 of the surface 10 s of the sample 10.
The distribution of the diffracted X-ray intensity when these rotation angles ω and 2θ are changed around FIG. That is, the surface 10 of the sample 10
s represents the fluctuation distribution state of the in-plane crystal orientation.

In this measurement, no change or expansion in the ω-2θ direction, that is, no expansion or change in the lattice constant is observed, but the lattice constant is different within the surface 10s of the sample 10 to be measured or very near the surface. For example, AlGaN, GaInN
When such substances are mixed, a change or spread is also observed in the ω-2θ direction.

In FIG. 3, the range of the rotation angle ω is ± 0.2 ° of the center angle, and the range of ω−2θ is ± 0.05 ° of the center angle.
However, the range of these measurements was set to a wide range or a narrow range as necessary, depending on the state of the sample such as the distribution of the crystal plane spacing and the distribution of the crystal orientation. Dimension distribution measurements can be made.

The object of the X-ray measurement method according to the present invention described above is, for example, the in-plane orientation of various materials such as a nitride material of a group III element, a crystalline thin film, a semiconductor thin film, and a dielectric thin film. It can be used for quantitative evaluation. And accurate evaluation of the crystallinity of the material becomes possible, and it is applied to the improvement of the crystallinity, and semiconductor devices, magnetic recording devices,
The characteristics of various devices such as a display device can be improved.

The X-ray measuring method and the X-ray measuring apparatus of the present invention are not limited to the above-described embodiment, but may have various other configurations without departing from the gist of the present invention.

[0056]

According to the present invention described above, the intensity distribution of the reciprocal lattice cross section substantially parallel to the surface can be obtained by performing mapping measurement under conditions that substantially satisfy the total reflection condition and the Bragg condition. From the intensity distribution of the obtained reciprocal lattice cross section, even for the crystal plane perpendicular to the surface of the sample to be measured,
The state of fluctuation of the crystal orientation in the direction of the crystal plane and the state of fluctuation of the lattice spacing can be distinguished and comprehensively evaluated.

Therefore, it is possible to accurately evaluate the crystallinity of various materials such as a nitride material of a group III element, a metal thin film having a crystal orientation, a semiconductor thin film, and a dielectric thin film. It can contribute to improvement of characteristics of various devices such as a semiconductor device, a magnetic recording device, and a display device.

[Brief description of the drawings]

FIG. 1 is a schematic view of a reciprocal lattice space for explaining an X-ray measurement method of the present invention.

FIG. 2 is a schematic configuration diagram of an X-ray measurement device used for the X-ray measurement method of the present invention.

FIG. 3 is a diagram showing measurement results obtained by measuring the surface of a GaN epitaxial growth crystal using the X-ray measurement method of the present invention.

[Explanation of symbols]

Reference Signs List 1 X-ray diffraction measurement device, 2 X-ray source, 3 goniometer device, 4 X-ray detector, 10 sample to be measured, 10 s sample surface, 11 crystal plane, Xo (incident) X-ray, Xd diffraction X-ray, M measurement point

Claims (2)

[Claims] An X-ray source for generating X-rays to make it monochromatic; a goniometer device having at least a three-way moving mechanism and a one-way rotating mechanism for the sample to be measured; and a reflection by the sample to be measured. An X-ray detector for detecting the detected X-ray, and an X-ray rotation mechanism for changing the direction of the sample to be measured with respect to the measurement point by rotating the X-ray source and the X-ray detector in synchronization with each other. And fixing the sample to be measured so that the surface of the sample to be measured is perpendicular to the rotation axis of the one-way rotating mechanism. X-rays from the X-ray source Sets the incident angle of the X-rays to the surface under the condition of total reflection on the surface of the sample to be measured, and the sample to be measured satisfying the Bragg reflection condition on one crystal plane perpendicular to the surface of the sample to be measured. The rotation angle of the rotation mechanism and the X-ray rotation A rotation angle of the rotation mechanism and a rotation angle of the rotation mechanism, and a rotation angle of the rotation mechanism and the X-ray rotation mechanism. With the rotation angle of one of the rotation mechanisms set to a constant value, the other rotation mechanism is rotationally scanned to perform continuous or intermittent X-ray measurement by the X-ray detector, and the fixed value is changed. Further, the other rotating mechanism is further rotated and scanned to perform continuous or intermittent X-ray measurement by the X-ray detector. Thereafter, the above-mentioned change in the constant value and the continuous or intermittent X-ray measurement are repeated. And finally measuring an X-ray intensity distribution in a two-dimensional area which is within the predetermined range of the rotation angle of the rotation mechanism and the predetermined range of the rotation angle of the X-ray rotation mechanism. X-ray measurement method. 2. A goniometer device comprising: an X-ray source for generating X-rays to make it monochromatic; a goniometer device having at least a three-way moving mechanism and a one-way rotating mechanism for the sample to be measured; and a reflection by the sample to be measured. An X-ray detector for detecting the detected X-ray, and an X-ray rotation mechanism for changing the direction of the sample to be measured with respect to the measurement point by rotating the X-ray source and the X-ray detector in synchronization with each other. An X-ray measuring apparatus comprising: first rotation control means for controlling rotation of the one-way rotation mechanism; and second rotation control means for controlling rotation of the X-ray rotation mechanism. A rotation angle of the first rotation control means and a rotation angle of the second rotation control means satisfying a Bragg reflection condition on one crystal plane of the sample to be measured; and a rotation angle centered on the rotation angle of the first rotation control means. Rotation by 1 rotation control means A scanning range of the scanning, the second taking place about a rotation control means the rotation angle of the second
And the scanning range of the rotational scanning by the rotation control means is given to the control program. Using the control program, the rotation control of one of the first rotation control means and the second rotation control means is performed. With respect to a state where the means is a constant value within the scanning range, rotational scanning by the other rotation control means and continuous or intermittent X-ray measurement by the X-ray detector are performed. The constant value in the scanning range is set as a constant value changed in the scanning range, and the rotation scanning by the other rotation control means and the continuous or intermittent X-ray measurement by the X-ray detector are repeated. In particular, an X-ray intensity distribution in a two-dimensional area within the scanning range of the rotation scanning by the first rotation control means and within the scanning range of the rotation scanning by the second rotation control means is obtained. X-ray measuring apparatus according to claim and.