JPH11300481A - Vacuum chamber for semiconductor manufacturing device and its manufacture - Google Patents

Vacuum chamber for semiconductor manufacturing device and its manufacture

Info

Publication number
JPH11300481A
JPH11300481A JP10663598A JP10663598A JPH11300481A JP H11300481 A JPH11300481 A JP H11300481A JP 10663598 A JP10663598 A JP 10663598A JP 10663598 A JP10663598 A JP 10663598A JP H11300481 A JPH11300481 A JP H11300481A
Authority
JP
Japan
Prior art keywords
aluminum
vacuum chamber
side wall
semiconductor manufacturing
aluminum alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10663598A
Other languages
Japanese (ja)
Inventor
Koichi Matsumoto
公一 松本
Seiji Sasabe
誠二 笹部
Hidehito Okamoto
秀仁 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP10663598A priority Critical patent/JPH11300481A/en
Priority to KR1019990013293A priority patent/KR19990083213A/en
Publication of JPH11300481A publication Critical patent/JPH11300481A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • B23K20/122Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
    • B23K20/1265Non-butt welded joints, e.g. overlap-joints, T-joints or spot welds

Abstract

PROBLEM TO BE SOLVED: To obtain the vacuum chamber for the semiconductor manufacturing device with a high dimensional precision and its manufacturing method by which a large type equipment is not used and the vacuum chamber can be assembled at a low cast. SOLUTION: Relating to the vacuum chamber made of aluminum, which is used as a vacuum container, on a square tube shaped side wall part 1, a surface lid 2 having a stair shaped butting part 4, is fit, a tool 3 is brought into contact with the front surface of the peripheral part of the surface lid 2 while rotating the tool 3 made of aluminum or a metal harder than an aluminum alloy, and the tool 3 is moved along this peripheral part. Consequently, by using frictional heat generated between the tool 3 and the surface lid 2, the surface lid 2 and the upper end face of the side wall part 1, are subjected to solid phase bonding.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体製造装置にお
いて使用される真空チャンバ及びその製造方法に関し、
特にアルミニウム又はアルミニウム合金製の真空チャン
バ及びその製造方法に関する。
The present invention relates to a vacuum chamber used in a semiconductor manufacturing apparatus and a method for manufacturing the same.
In particular, the present invention relates to a vacuum chamber made of aluminum or an aluminum alloy and a method of manufacturing the same.

【0002】[0002]

【従来の技術】近時、半導体製造装置においては、超高
真空かつウルトラクリーンな性能を要求される真空チャ
ンバが使用されている。この真空チャンバは、アルミニ
ウム又はアルミニウム合金製(以下、アルミニウム又は
アルミニウム合金を総称してアルミニウムという)の厚
板又は鍛造品等から削りだす方法、アルミニウムの板材
を組み合わせて溶融溶接する方法、アルミニウムの板材
を組み合わせてろう付けする方法(特開平7−2510
58号公報)及びろう材を接合部に挿入しかつレーザー
又は電子ビーム溶接を用いる方法(特開平9−1942
4号公報)により製造されている。
2. Description of the Related Art Recently, in a semiconductor manufacturing apparatus, a vacuum chamber that requires ultra-high vacuum and ultra-clean performance is used. This vacuum chamber is formed by cutting a thick plate or a forged product made of aluminum or an aluminum alloy (hereinafter, aluminum or aluminum alloy is collectively referred to as aluminum), a method of fusion-welding a combination of aluminum plates, and a plate of aluminum (Japanese Patent Laid-Open No. 7-2510)
No. 58) and a method of inserting a brazing filler metal into a joint and using laser or electron beam welding (Japanese Patent Laid-Open No. 9-1942).
No. 4).

【0003】[0003]

【発明が解決しようとする課題】しかし、厚板又は鍛造
品等から削り出すことによりチャンバを成形する方法に
おいては、大型のチャンバを製造する場合に、材料費及
び切削加工費が高くなる上に材料の無駄が多く発生し
て、製造コストが極めて高くなり過ぎるという問題があ
る。
However, in the method of forming a chamber by shaving a thick plate or a forged product or the like, when a large chamber is manufactured, material costs and cutting costs are increased. There is a problem that a large amount of material waste occurs and the manufacturing cost becomes extremely high.

【0004】また、アルミニウム板材を組み合わせてM
IG溶接又はTIG溶接等により溶接する方法は、条件
管理がシビアで欠陥が生じた場合の補修コストが高いと
共に、溶接作業の際に各パーツが溶接熱により高温に加
熱されるため歪が生じて寸法精度の悪化を招く。
[0004] Further, by combining aluminum plate materials, M
The method of welding by IG welding or TIG welding, etc., requires high repair costs when conditions are severe and defects occur, and distortion occurs because each part is heated to a high temperature by welding heat during welding work. This leads to a decrease in dimensional accuracy.

【0005】アルミニウム板材を組み合わせてろう付け
する方法は、大型のチャンバを製造する場合、大型の加
熱炉が必要となってしまうという問題がある。
[0005] The brazing method using a combination of aluminum plates has a problem that a large heating furnace is required when a large chamber is manufactured.

【0006】レーザー及び電子ビームにより溶接する方
法も、溶接のための設備が大型化し、溶接機及びそのシ
ステムに必要なコストが高くなってしまうという問題が
ある。
[0006] The method of welding with a laser and an electron beam also has the problem that the equipment for welding increases in size and the cost required for the welding machine and its system increases.

【0007】本発明はかかる問題点に鑑みてなされたも
のであって、大型の設備を使用することなく、低コスト
で組み立てることができ、寸法精度が高い半導体製造装
置用真空チャンバ及びその製造方法を提供することを目
的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and can be assembled at low cost without using large-scale equipment and has high dimensional accuracy and a method of manufacturing the same. The purpose is to provide.

【0008】[0008]

【課題を解決するための手段】本発明に係る半導体製造
装置用真空チャンバは、底板及び/又は表面蓋と、側壁
部材とがアルミニウム又はアルミニウム合金により別体
で作られていて、側壁部材と底板及び/又は表面蓋とが
アルミニウム又はアルミニウム合金より硬い金属との摩
擦熱を使用した摩擦接合法により接合されて構成されて
いることを特徴とする。
In a vacuum chamber for a semiconductor manufacturing apparatus according to the present invention, a bottom plate and / or a surface cover and a side wall member are separately made of aluminum or an aluminum alloy. And / or wherein the surface lid is joined by a friction joining method using frictional heat with a metal harder than aluminum or an aluminum alloy.

【0009】本発明に係る半導体製造装置用真空チャン
バの製造方法は、底板及び/又は表面蓋と、側壁部材と
をアルミニウム又はアルミニウム合金により別体で製造
し、この側壁部材と底板及び/又は表面蓋とをアルミニ
ウム又はアルミニウム合金より硬い金属との摩擦熱を使
用した摩擦接合法により接合することを特徴とする。
In a method of manufacturing a vacuum chamber for a semiconductor manufacturing apparatus according to the present invention, a bottom plate and / or a surface lid and a side wall member are manufactured separately from aluminum or an aluminum alloy, and the side wall member and the bottom plate and / or the surface are manufactured separately. The lid and the lid are joined by a friction joining method using friction heat with a metal harder than aluminum or an aluminum alloy.

【0010】[0010]

【発明の実施の形態】以下、本発明の実施例について添
付の図面を参照して具体的に説明する。図1は本発明の
実施例方法を示す斜視図である。真空チャンバを角筒状
の側壁部1と、この側壁部1の上に配置される表面蓋2
とに分割して、各部材を別体で製造する。表面蓋2の側
壁1の上端に重ねられる下面の周縁部は、階段状に成形
されており、周縁部の外側部分が薄く、内側部分が厚く
なっている。そして、側壁部1の上端面も表面蓋2の下
面周縁部と整合するように階段状に成形されている。即
ち、側壁部1の上端面はその外面側の部分が高く、内面
側の部分が低くなっている。そして、この表面蓋2を側
壁部1の上端に嵌合する。表面蓋2及び側壁部1はアル
ミニウム又はアルミニウム合金材よりなり、鋳造、押出
し、圧延及び鍛造等の方法により製造することができ
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. FIG. 1 is a perspective view showing a method according to an embodiment of the present invention. The vacuum chamber includes a rectangular cylindrical side wall 1 and a surface cover 2 disposed on the side wall 1.
And each member is manufactured separately. The peripheral edge of the lower surface superimposed on the upper end of the side wall 1 of the front cover 2 is formed in a step shape, and the outer portion of the peripheral edge is thinner and the inner portion is thicker. The upper end surface of the side wall portion 1 is also formed in a stepped shape so as to be aligned with the lower peripheral edge of the front cover 2. That is, the upper end surface of the side wall portion 1 is higher on the outer surface side and lower on the inner surface side. Then, the front cover 2 is fitted to the upper end of the side wall 1. The front cover 2 and the side wall 1 are made of aluminum or an aluminum alloy material, and can be manufactured by a method such as casting, extrusion, rolling, and forging.

【0011】なお、真空チャンバの底板も同様にアルミ
ニウム又はアルミニウム合金からなり、側壁部1と別体
で成形することもでき、また、側壁部1と一体的に成形
することもできる。
The bottom plate of the vacuum chamber is also made of aluminum or an aluminum alloy, and can be formed separately from the side wall portion 1 or can be formed integrally with the side wall portion 1.

【0012】表面蓋2を側壁部1の上に嵌合した後、表
面蓋2の上面の周縁部をツール3により摩擦接合する。
即ち、アルミニウム又はアルミニウム合金より硬い金属
からなる円柱状のツール3を自転させつつ、このツール
3を表面蓋2の周縁部に接触させてツール3と表面蓋2
とを摺動させる。この摺動により摩擦熱が発生し、この
摩擦熱により表面蓋2と、側壁部1との突合せ部4が加
熱され、局部的に攪拌することによって表面蓋2と側壁
部1とが接合される。そして、このツール3を表面蓋2
の周縁部に沿って移動させることにより、表面蓋2の周
縁部全体が側壁部1に接合される。これにより、図2
(a)に示すように、表面蓋2の周縁部に沿って材料が
溶融凝固した接合部5が形成され、真空チャンバが完成
する。
After the front cover 2 is fitted on the side wall 1, the peripheral edge of the upper surface of the front cover 2 is friction-welded with a tool 3.
That is, while rotating a columnar tool 3 made of a metal harder than aluminum or an aluminum alloy, the tool 3 is brought into contact with the peripheral edge of the front cover 2 so that the tool 3 and the front cover 2 are rotated.
And slide. The sliding generates frictional heat, and the frictional heat heats the abutting portion 4 between the surface cover 2 and the side wall portion 1 and locally joins the surface cover 2 and the side wall portion 1 by stirring. . Then, the tool 3 is attached to the surface lid 2
Is moved along the peripheral edge of the front cover 2 to join the entire peripheral edge of the front cover 2 to the side wall 1. As a result, FIG.
As shown in (a), a joint 5 where the material is melted and solidified is formed along the peripheral edge of the front cover 2, and the vacuum chamber is completed.

【0013】本実施例の接合方法は、側壁部材1の上に
嵌合され載置された表面蓋2の上面にツール3を接触さ
せ、ツール3と表面蓋2との間の摩擦熱を利用して表面
蓋2と側壁部材1とを固相接合する方法であり、側壁部
材1と表面蓋2とが溶融温度にまで達しないため、溶接
熱による歪の影響が少なくて済むと同時に、突合せ部4
の強度低下も小さくて済むという利点がある。従って、
真空チャンバのような構造物の場合、これを少なくとも
表面蓋及び/又は底板と、側壁部材とに分割したアルミ
ニウム製の部材と製造し、これを摩擦接合により接合す
ることによって、厚板又は鍛造品等から削り出す必要が
ないと共に、パーツの点数を減らし、製作工数とコスト
を低減させることが可能となる。
In the joining method according to the present embodiment, the tool 3 is brought into contact with the upper surface of the front cover 2 fitted and placed on the side wall member 1, and the frictional heat between the tool 3 and the front cover 2 is used. This is a method in which the surface lid 2 and the side wall member 1 are solid-phase bonded to each other, and since the side wall member 1 and the surface lid 2 do not reach the melting temperature, the influence of distortion due to welding heat can be reduced and, at the same time, butt joints Part 4
There is an advantage that the decrease in strength of the steel sheet can be small. Therefore,
In the case of a structure such as a vacuum chamber, it is manufactured as an aluminum member divided at least into a surface cover and / or a bottom plate and a side wall member, and is joined by friction welding to thereby obtain a thick plate or a forged product. It is not necessary to cut out the parts, etc., and the number of parts can be reduced, so that the number of manufacturing steps and cost can be reduced.

【0014】なお、部材1はアルミニウム押し出し形材
又は鋳物を使用することによって、より一層製造コスト
を低減することができる。
The use of an extruded aluminum member or a casting for the member 1 can further reduce the manufacturing cost.

【0015】また、突合せ部4の形状は、図2(a)に
示す上記実施例のように、階段状のものに限らず、図2
(b)に示すように、側壁部材1の上端面の厚さ方向中
央部に突起6を有するものであってもよく、この突合せ
部の形状は、種々選択することができる。
The shape of the butting portion 4 is not limited to the step-like shape as in the embodiment shown in FIG.
As shown in (b), the side wall member 1 may have a protrusion 6 at the center in the thickness direction of the upper end surface, and the shape of the abutting portion can be variously selected.

【0016】[0016]

【発明の効果】以上説明したように、本発明によれば、
半導体製造装置用アルミニウム製真空チャンバを大型の
設備を使用することなく固相接合により低コストで組み
立てることができる。
As described above, according to the present invention,
An aluminum vacuum chamber for semiconductor manufacturing equipment can be assembled at low cost by solid-state bonding without using large-scale equipment.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例方法を示す模式的斜視図であ
る。
FIG. 1 is a schematic perspective view showing a method according to an embodiment of the present invention.

【図2】(a)はその突合せ形状を示す図1の一部拡大
断面図、(b)は突合せ形状の変形例を示す一部拡大断
面図である。
2 (a) is a partially enlarged sectional view of FIG. 1 showing the butted shape, and FIG. 2 (b) is a partially enlarged sectional view showing a modified example of the butted shape.

【符号の説明】[Explanation of symbols]

1:側壁部材 2:表面蓋 3:ツール 4:突合せ部 5:接合部 6:突起 1: Side wall member 2: Surface cover 3: Tool 4: Butt joint 5: Joint 6: Projection

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 底板及び/又は表面蓋と、側壁部材とが
アルミニウム又はアルミニウム合金により別体で作られ
ていて、側壁部材と底板及び/又は表面蓋とがアルミニ
ウム又はアルミニウム合金より硬い金属との摩擦熱を使
用した摩擦接合法により接合されて構成されていること
を特徴とする半導体製造装置用真空チャンバ。
1. A method according to claim 1, wherein the bottom plate and / or the surface lid and the side wall member are made of aluminum or an aluminum alloy separately, and the side wall member and the bottom plate and / or the surface lid are made of a metal harder than aluminum or an aluminum alloy. A vacuum chamber for a semiconductor manufacturing apparatus, which is formed by joining by a friction joining method using frictional heat.
【請求項2】 前記アルミニウム及びアルミニウム合金
より硬い金属からなるツールを自転させつつ前記部材に
対し相対的に移動させて摩擦熱を発生させることを特徴
とする請求項1に記載の半導体製造装置用真空チャン
バ。
2. The semiconductor manufacturing apparatus according to claim 1, wherein a tool made of a metal harder than aluminum and an aluminum alloy is rotated relative to the member while rotating, thereby generating frictional heat. Vacuum chamber.
【請求項3】 前記部材同士が突き合わされる開先部
は、階段状に屈曲していることを特徴とする請求項1又
は2に記載の半導体製造装置用真空チャンバ。
3. The vacuum chamber for a semiconductor manufacturing apparatus according to claim 1, wherein a groove portion at which the members abut against each other is bent in a step-like manner.
【請求項4】 前記屈曲部は内面から板厚の10乃至5
0%の位置であることを特徴とする請求項3に記載の半
導体製造装置用真空チャンバ。
4. The bent portion has a thickness of 10 to 5 from the inner surface.
4. The vacuum chamber for a semiconductor manufacturing apparatus according to claim 3, wherein the position is 0%.
【請求項5】 底板及び/又は表面蓋と、側壁部材とを
アルミニウム又はアルミニウム合金により別体で製造
し、この側壁部材と底板及び/又は表面蓋とをアルミニ
ウム又はアルミニウム合金より硬い金属との摩擦熱を使
用した摩擦接合法により接合することを特徴とする半導
体製造装置用真空チャンバの製造方法。
5. A bottom plate and / or a surface lid and a side wall member are manufactured separately from aluminum or an aluminum alloy, and the side wall member and the bottom plate and / or the surface lid are frictionally bonded to a metal harder than aluminum or an aluminum alloy. A method of manufacturing a vacuum chamber for a semiconductor manufacturing apparatus, wherein the bonding is performed by a friction bonding method using heat.
【請求項6】 前記アルミニウム又はアルミニウム合金
より硬い金属からなるツールを自転させつつ、前記部材
に対し相対的に移動させて摩擦熱を発生させることを特
徴とする請求項5に記載の半導体製造装置用真空チャン
バの製造方法。
6. The semiconductor manufacturing apparatus according to claim 5, wherein the tool made of a metal harder than aluminum or an aluminum alloy is rotated relative to the member while rotating, thereby generating frictional heat. Manufacturing method for vacuum chambers.
【請求項7】 前記部材の突き合せ部に階段状に屈曲し
た開先を形成することを特徴とする請求項5又は6に記
載の半導体製造装置用真空チャンバの製造方法。
7. The method for manufacturing a vacuum chamber for a semiconductor manufacturing apparatus according to claim 5, wherein a groove which is bent in a stepwise manner is formed at a butt portion of said member.
【請求項8】 前記屈曲部は内面から板厚の10乃至5
0%の位置であることを特徴とする請求項7に記載の半
導体製造装置用真空チャンバの製造方法。
8. The bent portion has a thickness of 10 to 5 from the inner surface.
8. The method according to claim 7, wherein the position is 0%.
JP10663598A 1998-04-16 1998-04-16 Vacuum chamber for semiconductor manufacturing device and its manufacture Pending JPH11300481A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10663598A JPH11300481A (en) 1998-04-16 1998-04-16 Vacuum chamber for semiconductor manufacturing device and its manufacture
KR1019990013293A KR19990083213A (en) 1998-04-16 1999-04-15 Vacuum chamber member and production process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10663598A JPH11300481A (en) 1998-04-16 1998-04-16 Vacuum chamber for semiconductor manufacturing device and its manufacture

Publications (1)

Publication Number Publication Date
JPH11300481A true JPH11300481A (en) 1999-11-02

Family

ID=14438584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10663598A Pending JPH11300481A (en) 1998-04-16 1998-04-16 Vacuum chamber for semiconductor manufacturing device and its manufacture

Country Status (1)

Country Link
JP (1) JPH11300481A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1188508A2 (en) * 2000-09-13 2002-03-20 Hitachi, Ltd. Friction stir welding
EP1206995A2 (en) * 2000-11-17 2002-05-22 Hitachi, Ltd. Friction stir welding method
US6474533B1 (en) 1999-11-24 2002-11-05 Hitachi, Ltd. Friction stir welding method
US6582831B2 (en) 2000-02-25 2003-06-24 Hitachi, Ltd. Friction stir welded body and frame member therefor
JP2011011239A (en) * 2009-07-03 2011-01-20 Nippon Light Metal Co Ltd Lid joining method
JP2011115847A (en) * 2009-12-03 2011-06-16 Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi Friction stir welding method and product produced by the method
JP2011115846A (en) * 2009-12-03 2011-06-16 Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi Friction stir welding method
JP2011115845A (en) * 2009-12-03 2011-06-16 Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi Friction stir welding method and friction stir welded product
WO2015122441A1 (en) * 2014-02-14 2015-08-20 アイセル株式会社 Structural body production method, structural body, and heat exchanger

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6779706B2 (en) 1999-11-24 2004-08-24 Hitachi, Ltd. Frame member for friction stir welding
US6474533B1 (en) 1999-11-24 2002-11-05 Hitachi, Ltd. Friction stir welding method
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