JPH11286739A - Lapping machine - Google Patents

Lapping machine

Info

Publication number
JPH11286739A
JPH11286739A JP9176898A JP9176898A JPH11286739A JP H11286739 A JPH11286739 A JP H11286739A JP 9176898 A JP9176898 A JP 9176898A JP 9176898 A JP9176898 A JP 9176898A JP H11286739 A JPH11286739 A JP H11286739A
Authority
JP
Japan
Prior art keywords
weight
less
content
lapping
lapping machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9176898A
Other languages
Japanese (ja)
Inventor
Toshihiro Kiyono
敏廣 清野
Akira Yoshida
明 吉田
Takeshi Amano
健史 天野
Tomohiro Aizawa
智宏 相澤
Takayoshi Ito
多可良 伊藤
Shinji Furusawa
真治 古澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Zosen Corp
SpeedFam-IPEC Co Ltd
Original Assignee
Hitachi Zosen Corp
SpeedFam-IPEC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Zosen Corp, SpeedFam-IPEC Co Ltd filed Critical Hitachi Zosen Corp
Priority to JP9176898A priority Critical patent/JPH11286739A/en
Priority to EP99105171A priority patent/EP0947289A1/en
Publication of JPH11286739A publication Critical patent/JPH11286739A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/14Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C37/00Cast-iron alloys
    • C22C37/04Cast-iron alloys containing spheroidal graphite

Abstract

PROBLEM TO BE SOLVED: To provide a lapping machine which works the surface of a plate-work for which particularly extremely high grades of flatness and parallelism are required and which is provided with cast iron lapping surface plates having particularly little dimensional change to the temp. variation. SOLUTION: In the lapping machine provided with the cast iron alloy-made surface plates 1, 2 containing 1.0-4.0 wt.% carbon, <38 wt.% total of nickel and cobalt and as the other element, <=2.0 wt.% silicon, <=2.0 wt.% manganese, <=0.1 wt.% sulfur, <=0.15 wt.% phosphorus, <=0.1 wt.% magnesium and the balance iron with few content of impurities, this surface plates 1, 2 in the lapping machine, has the characteristic, the grain diameter of spheroidal graphite contained in the structure of this alloy is <=50 μm and the number of the grains is <=150/mm<2> and this coefficient of thermal expansion is <=5×10<-6> / deg.C.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、極めて高い平坦度
や平行度が特に要求される板状の工作物の両面を同時に
加工するラッピング加工機の定盤の材質に関わるもので
あり、更に詳しくは熱膨張係数が低く熱による変形が少
ない定盤を有するラッピング加工機に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for a surface plate of a lapping machine for simultaneously processing both sides of a plate-like work requiring extremely high flatness and parallelism. The present invention relates to a lapping machine having a surface plate having a low coefficient of thermal expansion and a small deformation due to heat.

【0002】[0002]

【従来の技術】従来、ガラス、金属材料、半導体材料、
セラミックスあるいは炭素材料等で、極めて高い平面度
や平行度が特に要求される板状の材料の平面加工は、上
下あるいはその一方に定盤を配し、その間あるいはその
上に被加工体を挟持して、研磨材たる砥粒微粉スラリー
を定量的に供給しつつ定盤及び被加工体を押圧回転運動
させて、その作用で厚さの均一化、平面度や平行度の向
上を行なうという所謂ラッピング加工方法が行なわれて
いる。
2. Description of the Related Art Conventionally, glass, metal materials, semiconductor materials,
For planar processing of plate-like materials such as ceramics and carbon materials that require extremely high flatness and parallelism, place a platen on the top and bottom or one of them, and hold the workpiece between or on top of it. So-called lapping, in which the platen and the workpiece are pressed and rotated while the abrasive fine powder slurry as the abrasive is supplied quantitatively, and the action is used to make the thickness uniform and improve the flatness and parallelism. Processing methods have been implemented.

【0003】特に近年、IC、LSIの記憶容量のアッ
プと生産性の向上といった必要性から、その原材料であ
るシリコンウェーハあるいは化合物系のウェーハ(以下
ウェーハと総称する)の厚さの均一化、特に加工精度、
寸法安定性の向上と同時にウェーハ自体のサイズの大型
化の傾向が著しく、ラッピング加工における主たる条件
や装置自体の精度と安定性、およびその他種々の付帯条
件についても極めて精密な管理が必要とされるようにな
って来ている。特に、シリコンウェーハの場合はその原
料となるシリコン単結晶インゴットの製造技術が向上
し、直径12インチ、16インチといった大口径のもの
の生産も行われるようになって来ている。従って、この
ような大口径のウェーハのラッピング加工を生産効率よ
く行うためにはキャリア径が24インチ、32インチと
いった大口径のラッピング定盤を具備した大型ラッピン
グ加工機が近年ポピュラーになりつつある。
[0003] In recent years, in particular, the need to increase the storage capacity of ICs and LSIs and to improve the productivity has led to the uniformization of the thickness of silicon wafers or compound-based wafers (hereinafter collectively referred to as wafers) as raw materials, Processing accuracy,
The tendency for the size of the wafer itself to increase at the same time as the improvement in dimensional stability is remarkable, and extremely precise control is also required for the main conditions in lapping processing, the accuracy and stability of the equipment itself, and various other incidental conditions. It is coming. In particular, in the case of silicon wafers, the technology for manufacturing a silicon single crystal ingot as a raw material has been improved, and the production of large-diameter wafers having a diameter of 12 inches or 16 inches has been performed. Therefore, in order to carry out lapping of such a large-diameter wafer with high production efficiency, a large-sized lapping machine equipped with a large-diameter lapping plate having a carrier diameter of 24 inches or 32 inches has recently become popular.

【0004】ここでいうラッピング定盤とは、例えば鋳
鉄、銅、錫、軟鉄等の金属、あるいはセラミックス、ガ
ラス等の非金属を材料とし、ある程度の厚みを持った円
盤であって、一般的に加工に用いる面には例えば細い格
子状の溝が刻されていて、これが上下両面あるいは片面
に配されている。加工に際しては、両面加工機の場合は
その間に被加工体を押圧挾持し、該被加工体あるいは定
盤あるいはその双方を回転させ、片面加工機の場合はホ
ルダーをもって被加工体を定盤に圧接し、その加工面に
砥粒スラリーを定量的に供給する。砥粒の作用によって
被加工体の面が少しずつ除去されて行き、平坦かつ均質
な面粗さでもって創成されて行くのであるが、かかるタ
イプの加工においては、工作物加工面の平面度は定盤の
持つ平面度がそのまま転写されるものである。従って、
定盤の形状及び平面度は極めて精度よく保たれねばなら
ない。特にシリコンウェ−ハの如き硬脆材料を工作物と
する場合は、鋳鉄製の定盤を使用することが一般的であ
る。
The lapping plate referred to here is a disk having a certain thickness made of a metal such as cast iron, copper, tin and soft iron, or a non-metal such as ceramics and glass. For example, a thin lattice-shaped groove is formed on the surface used for processing, and this is arranged on both upper and lower surfaces or on one surface. In the case of a double-sided processing machine, the workpiece is pressed and clamped between them, and the workpiece and / or the platen are rotated.In the case of a single-sided processing machine, the workpiece is pressed against the surface plate with a holder. Then, the abrasive slurry is quantitatively supplied to the processed surface. The surface of the workpiece is gradually removed by the action of the abrasive grains and is created with a flat and uniform surface roughness, but in this type of processing, the flatness of the workpiece processing surface is The flatness of the surface plate is transferred as it is. Therefore,
The shape and flatness of the surface plate must be kept extremely accurately. In particular, when a hard and brittle material such as a silicon wafer is used as a workpiece, a platen made of cast iron is generally used.

【0005】前記一般的な鋳鉄製定盤材料としては炭素
分1〜5重量%程度を含むいわゆる鋳鉄が使用されてお
り、その熱膨張係数αは大略10〜11×10-6/℃の
レベルである。この材質の鋳鉄定盤を使用している限
り、例えば24Bサイズの定盤(外径Φ1592mm)
の場合、定盤の厚さ方向(70mm)で温度差1℃程度
になると約70μmの反りが生ずる。一方前述の通り、
ラッピングにおける工作物の加工物の平面度は定盤の持
つ平面度がそのまま転写されるものであり、また例えば
8インチシリコンウェーハのラッピング加工において許
容されるTTVは高々0.7μm程度であるため、この
ような反りは到底許容されるものではなく、したがっ
て、実使用においては、使用温度に温調した上で共摺等
で定盤の面出しを新たに行なった後に実加工を行なうこ
とが必要であった。このような作業を必要とするため、
定盤の損耗も激しく、高価な定盤を数ヶ月に一回程度の
頻度で交換することが必要となり、実作業における煩雑
さに加えて経済的なロスも大きかった。
As the general cast iron platen material, a so-called cast iron containing about 1 to 5% by weight of carbon is used, and its thermal expansion coefficient α is about 10 to 11 × 10 −6 / ° C. is there. As long as a cast iron surface plate of this material is used, for example, a surface plate of 24B size (outer diameter Φ1592 mm)
In the case of (1), a temperature difference of about 1 ° C. in the thickness direction (70 mm) of the surface plate causes a warpage of about 70 μm. Meanwhile, as mentioned above,
The flatness of the workpiece in the lapping is the same as the flatness of the surface plate, and the TTV allowed in the lapping of an 8-inch silicon wafer is at most about 0.7 μm. Such warpage is not at all permissible. Therefore, in actual use, it is necessary to adjust the temperature to the operating temperature and then perform the actual machining after newly performing surface polishing on the surface plate with a common slide etc. Met. Because such work is required,
The surface plate was also heavily worn, and it was necessary to replace an expensive surface plate about once every few months. This was not only complicated in actual work but also caused a large economic loss.

【0006】すなわち、シリコンウェーハの場合は、加
工に伴って発生する研磨熱、あるいは定盤を回転させる
ためのモーターや減速機から発生する熱の影響で、定盤
の温度が前述の通り停台時に対して5〜10℃程度上昇
し、その形状に反りを生ぜしめ、加工されたウェーハの
寸法精度に深刻な影響を与えることは否定出来なかっ
た。かかる弊害を除去するために、定盤の内部に冷却用
の媒体を通して温度の上昇を抑制し、定盤を冷却状態の
安定な温度で加工を行う方法や、定盤を安定温度に昇温
維持して加工を行なう方法がすでに提唱(例えば、特開
昭63−245368号公報、特開平4−53671号
公報、特願平9−317735号公報)されており、各
々目的とする点の解決においては有効であるが、これら
はいずれも現行の装置に何らかの装置を付属させるもの
であって、本質的対策とは言い難かった。
That is, in the case of a silicon wafer, the temperature of the platen is reduced as described above due to the polishing heat generated by the processing or the heat generated by the motor or reduction gear for rotating the platen. It could not be denied that the temperature rose by about 5 to 10 ° C. with time, causing warpage of the shape and seriously affecting the dimensional accuracy of the processed wafer. In order to eliminate such adverse effects, a method for controlling the temperature rise by passing a cooling medium inside the surface plate and processing the surface plate at a stable temperature in a cooled state, or maintaining the temperature of the surface plate at a stable temperature Have already been proposed (for example, JP-A-63-245368, JP-A-4-53671, and Japanese Patent Application No. 9-317735). Although these are effective, they all add some kind of device to the existing device, and it is hardly an essential measure.

【0007】これらの諸々の問題点を解消する目的で、
本質的対策として定盤を構成する鋳鉄を熱に対する線膨
張係数αの低い合金とする試みも行なわれている。例え
ば、特公昭60−51547号公報あるいは特公平3−
90541号公報に示されているように、炭素鋼をベー
スとして、それにニッケル及びコバルトを副成分として
加えた合金が熱膨張係数αが5×10-6/℃以下の素材
として提案されている。これらの低熱膨張鋳鉄合金は、
1〜5%程度の炭素と、多量のニッケル、コバルト成分
を含むものである。一般的な鋳鉄の場合加えられた炭素
分は熔融過程において組織内に分散し、冷却過程におい
て黒鉛の結晶として均一に析出する。この鋳鉄をラッピ
ング定盤として使用する場合、定盤表面に存在する前述
の球状黒鉛が研磨に伴う擦過作用により脱落し微細気孔
を形成し、適度な面粗度や砥粒捕捉性につながり、ラッ
ピング定盤として使用ができるのである。一方、上述の
低熱膨張鋳鉄合金の場合、鉄以外の成分が多いため炭素
分の黒鉛球晶化が十分でなく、例えば不定形炭素となっ
たり、あるいは針状結晶となったりして偏析し、定盤と
しての性質に悪影響を与え例えば工作物表面に異常条痕
(スクラッチ)を起こしたりあるいはTTVを悪化させ
たりするため、精密加工を目的としたラッピング定盤と
しては使用が困難であった。即ち、単に熱膨張係数が低
いだけの鋳鉄素材を使用しても超精密加工を目的とした
ラッピング定盤用途には適用できないのである。
[0007] In order to solve these various problems,
As an essential measure, attempts have been made to use cast iron constituting the surface plate as an alloy having a low coefficient of linear expansion α against heat. For example, Japanese Patent Publication No. 60-51547 or Japanese Patent Publication No.
As disclosed in Japanese Patent Publication No. 90541, an alloy comprising carbon steel as a base and nickel and cobalt added as subcomponents has been proposed as a material having a thermal expansion coefficient α of 5 × 10 −6 / ° C. or less. These low thermal expansion cast iron alloys
It contains about 1 to 5% of carbon and a large amount of nickel and cobalt components. In the case of general cast iron, the added carbon content is dispersed in the structure during the melting process, and is uniformly precipitated as graphite crystals during the cooling process. When this cast iron is used as a lapping platen, the aforementioned spherical graphite present on the surface of the platen falls off due to the rubbing action accompanying polishing and forms fine pores, leading to an appropriate surface roughness and abrasive trapping property, and lapping. It can be used as a surface plate. On the other hand, in the case of the above-mentioned low thermal expansion cast iron alloy, graphite spheroidization of carbon is not sufficient because there are many components other than iron, for example, amorphous carbon, or segregated into needle-like crystals, It has been difficult to use it as a lapping plate for precision machining because it adversely affects the properties of the platen, for example, causes abnormal scratches on the surface of the workpiece or deteriorates the TTV. That is, even if a cast iron material having only a low coefficient of thermal expansion is used, it cannot be applied to a lapping plate for ultraprecision machining.

【0008】[0008]

【発明が解決しようとする課題】本発明者等は、上述の
従来のラッピング加工機の持つ問題点に鑑み、鋭意研究
を行った結果、合金の成分比率に工夫を加えて熱膨張係
数を低くし同時に定盤として必要な剛性、被削性等の物
性を具備し、かつ鋳鉄合金組織中の炭素の状態を規制し
たFe−Ni−Co系鋳鉄合金をラッピング定盤として
使用することで、超精密加工を目的としたラッピング加
工機が得られることを見い出したものであり、その目的
とする所は、定盤の形状の温度による変化が少なく、頻
繁に形状の修正を行なうことなく加工を行なうことがで
きるラッピング加工機を提供することにある。
In view of the above-mentioned problems of the conventional lapping machine, the present inventors have conducted intensive studies and as a result, have devised the alloy component ratio to lower the thermal expansion coefficient. At the same time, using a Fe-Ni-Co-based cast iron alloy, which has the required physical properties such as rigidity and machinability as a surface plate and regulates the state of carbon in the structure of the cast iron alloy, as a lapping surface plate, It has been found that a lapping machine for the purpose of precision machining can be obtained, and the purpose is to perform processing without frequent modification of the shape of the surface plate with little change due to temperature. To provide a lapping machine capable of performing the lapping process.

【0009】[0009]

【課題を解決するための手段】上述の目的は、炭素含有
量が1.0〜4.0重量%の範囲内にあり、ニッケルと
コバルトの合計含有量が38重量%以内であって、それ
以外の元素含有量が、珪素分2.0重量%以下、マンガ
ン分2.0重量%以下、硫黄分0.1重量%以下、燐分
0.15重量以下、マグネシウム分0.1重量%以下で
あり、残部は微量の不純物を含む鉄からなる鋳鉄合金の
定盤を具備したラッピング加工機であって、該定盤を構
成する合金の組織中に含まれる球状黒鉛の粒径が50μ
m以下、粒子の数が150個/mm2以下であり、かつ
その熱膨張係数が5×10-6/℃以下であることを特徴
とするラッピング加工機により達成される。
SUMMARY OF THE INVENTION The above-mentioned object is achieved when the carbon content is in the range of 1.0 to 4.0% by weight, and the total content of nickel and cobalt is within 38% by weight. Element content other than silicon content 2.0% by weight or less, manganese content 2.0% by weight or less, sulfur content 0.1% by weight or less, phosphorus content 0.15% by weight or less, magnesium content 0.1% by weight or less The remainder is a lapping machine equipped with a cast iron alloy platen made of iron containing a trace amount of impurities, wherein the particle size of the spheroidal graphite contained in the structure of the alloy constituting the platen is 50 μm.
m or less, the number of particles is 150 / mm 2 or less, and the coefficient of thermal expansion is 5 × 10 −6 / ° C. or less.

【0010】[0010]

【発明の実施の形態】本発明において使用するラッピン
グ加工機とは、図1に示すように、上下相対する面に回
転可能な上定盤1と下定盤2を配して、その間にウェー
ハ等の工作物3を挟持しつつ回転し研磨剤を供給して研
磨を行なうものであって、定盤としては一体もので50
〜70mm程度の厚みを有する鋳鉄が使用される。そし
て加工においては定盤の持つ面精度がそのまま転写され
るのであるから、温度変化等の外乱条件に対しても変化
の少ないものでなくてはならない。本発明においてラッ
ピング定盤用に用いる鋳鉄合金は、上記の事柄に対応し
うる特徴を具備したものである。すなわち、剛性に優れ
た炭素鋼をベースとし、それにニッケルとコバルトをそ
の合計が全体に対して38重量%以下の比率としたFe
−Ni−Co系のオーステナイト系鋳鉄合金とすること
によりその熱膨張係数(線)を5×10-6/℃以下の低
いレベルにすることが可能となる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a lapping machine used in the present invention is provided with a rotatable upper platen 1 and a lower platen 2 which are rotatable on upper and lower opposing surfaces, and a wafer or the like therebetween. The workpiece 3 is rotated while sandwiching the workpiece 3 to supply an abrasive and perform polishing.
Cast iron having a thickness of about 70 mm is used. In the processing, since the surface accuracy of the surface plate is transferred as it is, it must be little changed even under disturbance conditions such as temperature change. In the present invention, the cast iron alloy used for the lapping plate has features that can correspond to the above matters. That is, based on carbon steel excellent in rigidity, nickel and cobalt were added to a total of 38% by weight or less of Fe.
The use of a -Ni-Co austenitic cast iron alloy makes it possible to reduce the coefficient of thermal expansion (line) to a low level of 5 10-6 / C or less.

【0011】更に、この鋳鉄合金の組織内に炭素分を黒
鉛球晶として均一に分散析出させ、一般鋳鉄のような鋳
造性、被削性、制振性を付与するためには、珪素分2.
0重量%以下、マンガン分2.0重量%以下、硫黄分
0.1重量%以下、燐分0.15重量以下、マグネシウ
ム分0.1重量%以下を上記成分に加えて、添加するこ
とが肝要である。このようにすることにより上記の性質
が付与され、かつ目的とする低熱膨張係数の合金、即ち
低膨張合金が得られるのである。
Further, in order to uniformly disperse and precipitate carbon as graphite spherulites in the structure of the cast iron alloy and to impart castability, machinability and vibration damping properties as in general cast iron, a silicon content of 2% is required. .
0% by weight or less, manganese content of 2.0% by weight or less, sulfur content of 0.1% by weight or less, phosphorus content of 0.15% by weight or less, and magnesium content of 0.1% by weight or less. It is important. By doing so, the above-mentioned properties are imparted and an intended alloy having a low coefficient of thermal expansion, that is, a low-expansion alloy can be obtained.

【0012】球状の黒鉛微細粒の粒径、分布密度は一般
鋳鉄用途の場合は特にその物性や性能に影響を与えるこ
とはないが、定盤用途の場合は重要な意味を持つ。即
ち、本発明においては、合金組織中に含まれる球状黒鉛
の粒径が50μm以下であることを要件としている。こ
れがラッピング定盤の表面に現れた場合はラッピングの
擦過作用により剥離除去されその跡が微小気孔となる。
ラッピングの研磨剤として使用される砥粒微粉のサイズ
がこの気孔よりも小さいとそれが加工中にこの気孔中に
捕捉され堆積し工作物表面に悪影響を与えることがある
が、このサイズが小さければそのような現象が起こるこ
とを効果的に防止することができる。50μm以上であ
ると砥粒の堆積や気孔中での劣化、硬化あるいは凝集が
激しく精密加工を目的としたラッピング加工には使用で
きない。
The particle size and distribution density of the fine spherical graphite particles do not particularly affect the physical properties and performance in the case of general cast iron applications, but have important significance in the case of surface plate applications. That is, in the present invention, the particle size of the spheroidal graphite contained in the alloy structure is required to be 50 μm or less. When this appears on the surface of the lapping plate, it is peeled off and removed by the rubbing action of the lapping, and the traces become micropores.
If the size of the abrasive fine powder used as an abrasive for lapping is smaller than the pores, it may be trapped and deposited in the pores during processing and adversely affect the surface of the workpiece, but if the size is small, It is possible to effectively prevent such a phenomenon from occurring. If the thickness is more than 50 μm, abrasive grains are deposited, deteriorated in the pores, hardened or agglomerated, and cannot be used for lapping for precision processing.

【0013】更に、本発明においては、上記の球状黒鉛
の個数は150個/mm2以下で均一に分散させること
が必要である。分散や分布が不均一であると、ラッピン
グ加工時の異常条痕(スクラッチ)の原因にもなり好ま
しくなく、実際に使用されることはできない。以下本発
明の実施態様を実施例および比較例を用いて説明する
が、これによって特に限定を行なうものではない。
Further, in the present invention, it is necessary that the number of the above-mentioned spheroidal graphite is uniformly dispersed at 150 or less / mm 2 . If the dispersion or distribution is non-uniform, it may cause abnormal streaks (scratch) at the time of lapping, which is not preferable and cannot be actually used. Hereinafter, embodiments of the present invention will be described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

【0014】[0014]

【実施例及び比較例】実施例 炭素含有量1〜2重量%、ニッケルとコバルトの合計の
含有量が36重量%、その他の成分含有量は珪素2重量
%以下、マンガン2重量%以下、硫黄0.1重量%以
下、燐0.15重量%以下、マグネシュウム0.1重量
%以下、残部を鉄とする鋳鉄合金を準備した。この鋳鉄
合金の熱膨張係数は5×10-6/℃であり、50μm以
上の粒径の球状黒鉛は含まれず、また含まれる球状黒鉛
の数は150個/mm2を越えることはなかった。この
鋳鉄合金を用いて24Bサイズの定盤(外径Φ1592
mm、厚さ70mm)を上下に有するラッピング加工機
を製造した。このラッピング加工機を用いて、8インチ
(200mm)サイズのシリコンウェーハのラッピング
加工を行なった。加工開始に際しては、定盤の予熱や保
温等の作業は行なわず、また、ダミー加工等も行なわな
かった。加工開始後の最初のバッチから、TTV等の形
状精度、更には面粗さともに品質規格内のものを略々1
00%の収率で得ることができた。
EXAMPLES AND COMPARATIVE EXAMPLES Example 1 to 2% by weight of carbon, 36% by weight of total nickel and cobalt, 2% by weight or less of silicon, 2% by weight or less of manganese, sulfur A cast iron alloy containing 0.1% by weight or less, phosphorus 0.15% by weight or less, magnesium 0.1% by weight or less, and the balance being iron was prepared. The coefficient of thermal expansion of this cast iron alloy was 5 × 10 −6 / ° C., no spherical graphite having a particle size of 50 μm or more was contained, and the number of spherical graphite contained did not exceed 150 / mm 2 . Using this cast iron alloy, a surface plate of 24B size (OD 1592
(mm, thickness 70 mm) at the top and bottom. Using this lapping machine, lapping of an 8-inch (200 mm) size silicon wafer was performed. At the start of processing, no work such as preheating and heat keeping of the surface plate was performed, and no dummy processing was performed. From the first batch after the start of processing, the shape accuracy of TTV, etc., and the surface roughness, which are within the quality standard, are almost 1
A yield of 00% could be obtained.

【0015】比較例 炭素含有量3.6重量%、珪素含有量2.5重量%、マ
ンガン含有量0.2重量、硫黄含有量0.04重量%以
下、燐含有量0.1重量%以下、マグネシュウム含有量
0.06重量%、残部を鉄とする鋳鉄合金を準備した。
この鋳鉄合金の熱膨張係数は11×10-6/℃であっ
た。この鋳鉄合金を用いて実施例と同様の24Bサイズ
の定盤(外径Φ1592mm、厚さ70mm)を上下に
有するラッピング加工機を製造した。このラッピング加
工機を用いて、8インチ(200mm)サイズのシリコ
ンウェーハのラッピング加工を行なった。加工開始に際
しては、定盤の予熱や保温等の作業は行なわず、また、
ダミー加工等も行なわなかった。加工開始後の3バッチ
までは形状精度が安定せず製品収率極めて悪く、安定し
た製品品質を高歩留りで得られるようになったのは5バ
ッチ目からであった。
Comparative Example Carbon content 3.6% by weight, silicon content 2.5% by weight, manganese content 0.2% by weight, sulfur content 0.04% by weight or less, phosphorus content 0.1% by weight or less A cast iron alloy containing 0.06% by weight of magnesium and the balance of iron was prepared.
The coefficient of thermal expansion of this cast iron alloy was 11 × 10 −6 / ° C. Using this cast iron alloy, a lapping machine having a 24B-size platen (outer diameter 1592 mm, thickness 70 mm) similar to that of the example was manufactured. Using this lapping machine, lapping of an 8-inch (200 mm) size silicon wafer was performed. At the start of processing, work such as preheating and heat retention of the surface plate is not performed.
No dummy processing was performed. Up to three batches after the start of processing, the shape accuracy was not stable and the product yield was extremely poor, and it was only from the fifth batch that stable product quality could be obtained at a high yield.

【0016】[0016]

【発明の効果】以上の実施例、比較例から明らかな通
り、本発明になるラッピング加工機を使用すれば、例え
ば定盤の予熱、保温、温調等の処理、あるいはダミー運
転による定盤温度の均質化等を行なうことなく、直ちに
機台の実稼動に入ることができる。従って、機台の稼働
率、更には製品の歩留まりを顕著に向上することができ
る。
As is clear from the above examples and comparative examples, when the lapping machine according to the present invention is used, for example, processing such as preheating, heat keeping and temperature control of the surface plate, or the temperature of the surface plate by dummy operation It is possible to immediately start the actual operation of the machine without homogenizing the machine. Therefore, the operating rate of the machine stand and the product yield can be significantly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】両面ラッピング加工機の縦断面図である。FIG. 1 is a longitudinal sectional view of a double-sided lapping machine.

【符号の説明】[Explanation of symbols]

1 上定盤 2 下定盤 3 工作物 1 Upper surface plate 2 Lower surface plate 3 Workpiece

───────────────────────────────────────────────────── フロントページの続き (72)発明者 天野 健史 神奈川県綾瀬市早川2647 スピードファム 株式会社内 (72)発明者 相澤 智宏 神奈川県綾瀬市早川2647 スピードファム 株式会社内 (72)発明者 伊藤 多可良 京都府舞鶴市字余部下1180番地 日立造船 メタルワークス株式会社内 (72)発明者 古澤 真治 京都府舞鶴市字余部下1180番地 日立造船 メタルワークス株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takeshi Amano 2647 Hayakawa Hayakawa, Ayase City, Kanagawa Prefecture Inside (72) Inventor Tomohiro Aizawa 2647 Hayakawa, Ayase City, Kanagawa Prefecture Speed Fam Corporation (72) Inventor Takayoshi Ito Hitachi Zosen Metal Works Co., Ltd. (1,180)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】炭素含有量が1.0〜4.0重量%の範囲
内にあり、ニッケルとコバルトの合計含有量が38重量
%以内であって、それ以外の元素含有量が、珪素分2.
0重量%以下、マンガン分2.0重量%以下、硫黄分
0.1重量%以下、燐分0.15重量以下、マグネシウ
ム分0.1重量%以下であり、残部は微量の不純物を含
む鉄である鋳鉄合金の定盤を具備したラッピング加工機
であって、該定盤を構成する合金の組織中に含まれる球
状黒鉛の粒径が50μm以下、粒子の数が150個/m
2以下であり、かつその熱膨張係数が5×10-6/℃
以下であることを特徴とするラッピング加工機。
(1) The carbon content is in the range of 1.0 to 4.0% by weight, the total content of nickel and cobalt is within 38% by weight, and the other element content is silicon content. 2.
0% by weight or less, manganese content 2.0% by weight or less, sulfur content 0.1% by weight or less, phosphorus content 0.15% by weight or less, magnesium content 0.1% by weight or less, the balance being iron containing trace impurities. A lapping machine equipped with a cast iron alloy surface plate, wherein the particle size of the spheroidal graphite contained in the structure of the alloy constituting the surface plate is 50 μm or less and the number of particles is 150 particles / m 2.
m 2 or less and its coefficient of thermal expansion is 5 × 10 −6 / ° C.
A lapping machine characterized by the following.
【請求項2】ラッピング加工機が、上下両面に定盤を有
するタイプであることを特徴とする請求項第1項記載の
ラッピング加工機。
2. The lapping machine according to claim 1, wherein the lapping machine is of a type having a platen on both upper and lower surfaces.
JP9176898A 1998-04-03 1998-04-03 Lapping machine Pending JPH11286739A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9176898A JPH11286739A (en) 1998-04-03 1998-04-03 Lapping machine
EP99105171A EP0947289A1 (en) 1998-04-03 1999-03-30 Lapping machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9176898A JPH11286739A (en) 1998-04-03 1998-04-03 Lapping machine

Publications (1)

Publication Number Publication Date
JPH11286739A true JPH11286739A (en) 1999-10-19

Family

ID=14035756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9176898A Pending JPH11286739A (en) 1998-04-03 1998-04-03 Lapping machine

Country Status (2)

Country Link
EP (1) EP0947289A1 (en)
JP (1) JPH11286739A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011092744A1 (en) * 2010-01-29 2011-08-04 エヌ・ティ・ティ・アドバンステクノロジ株式会社 Optical fiber polishing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021103709A1 (en) 2021-02-17 2022-08-18 Lapmaster Wolters Gmbh Double or single side processing machine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428822A1 (en) * 1974-06-14 1976-01-02 Goetzewerke SPHERICAL CAST IRON ALLOY WITH INCREASED WEAR RESISTANCE
JPS61219566A (en) * 1985-03-25 1986-09-29 Toshiba Corp Material for polishing surface plate
JP2568038B2 (en) * 1993-11-15 1996-12-25 株式会社東芝 Method of manufacturing material for polishing surface plate
JP2908316B2 (en) * 1996-05-27 1999-06-21 株式会社東芝 Polishing surface plate for Si wafer
JP3691913B2 (en) * 1996-09-05 2005-09-07 株式会社東芝 Polishing tool material and polishing surface plate using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011092744A1 (en) * 2010-01-29 2011-08-04 エヌ・ティ・ティ・アドバンステクノロジ株式会社 Optical fiber polishing apparatus

Also Published As

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