JPH11284094A - Semiconductor device and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make compatible the reduction in manufacturing cost, miniaturization of an exterior dimensions and improvement of heat radiation performance. SOLUTION: A semiconductor pellet 3 is fixed to a heat spreader 2 which is fixed on a package substrate 1. Bonding pads of a semiconductor pellet 3 are connected with solder bumps 4 which function as outer connecting electrodes, via a wiring pattern 1a formed on the package substrate 1 and bonding wires 5. Furthermore, the semiconductor pellet 3 encapsulated with resin 6, thus constitutes a semiconductor device in which the heat spreader 2 consisting of a metal like copper(Cu) satisfactory workability, cost and thermal conductivity. An uneven part 2a is formed on the outer surface of the heat spreader 2 itself by press working or the like, so that heat radiating performance is enhanced, without increasing the thickness or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a semiconductor device manufacturing technology, and more particularly to a technology effective when applied to a semiconductor device manufacturing technology and the like in which heat dissipation from semiconductor pellets needs to be considered.

[0002]

2. Description of the Related Art As described in documents such as "Surface Mount Technology" P2 to P8, published on March 1, 1997 by Nikkan Kogyo Shimbun, for example, miniaturization and cost reduction of a semiconductor device have been achieved. In order to cope with an increase in the number of input / output pins and an increase in the amount of heat generated by an increase in the operating frequency, a part of the package structure is constituted by a heat spreader made of a flat metal plate or the like,
It is known that semiconductor pellets are mounted on this heat spreader to release heat.

[0003]

However, when the amount of heat generated by the semiconductor pellets increases, there is a concern that the heat dissipation capability of a flat heat spreader is insufficient, and the type of semiconductor pellets to be mounted is restricted.

For this reason, for example, Nikkei BP, 199
As described in the literature such as VLSI Packaging Technology, P205, published on May 31, 3rd 2005, the radiation amount of heat is reduced by attaching the radiation fin of another member to the surface of the heat spreader with screws or the like. Although it is conceivable to achieve the improvement, another technical problem that the manufacturing cost of the semiconductor device is increased due to the complicated structure and the thickness dimension is increased is caused.

It is an object of the present invention to provide a semiconductor device and a semiconductor device manufacturing technique capable of achieving both a reduction in manufacturing cost and an improvement in heat radiation performance.

It is another object of the present invention to provide a semiconductor device and a semiconductor device manufacturing technique capable of achieving both a reduction in external dimensions and an improvement in heat dissipation performance.

Another object of the present invention is to provide a semiconductor device capable of mounting a semiconductor pellet having a large amount of generated heat in an inexpensive and small package structure and a technique for manufacturing the semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0009]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to the present invention, in a semiconductor device in which a semiconductor pellet having an arbitrary function is fixed to a heat radiating member, the heat radiating member has a structure having an uneven shape.

Further, the present invention provides a method of manufacturing a semiconductor device in which a semiconductor pellet having an arbitrary function is fixed to a heat radiating member, the method including a step of forming an uneven shape on the heat radiating member.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view showing an example of a configuration of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. It is a flowchart which shows an example of a manufacturing method.

The semiconductor device A according to the present embodiment includes a substantially frame-shaped package substrate 1, a plurality of wiring patterns 1a formed on the package substrate 1, and a heat spreader 2 (heat radiating member) supported by the package substrate 1. A semiconductor pellet 3 mounted on the heat spreader 2, a plurality of solder bumps 4 connected to the wiring pattern 1a, and a plurality of bonding pads (not shown) on the semiconductor pellet 3 and the plurality of wiring patterns 1a. And a resin 6 for sealing the semiconductor pellet 3.

The package substrate 1 is made of, for example, an insulating material such as a glass epoxy resin. The dimensions of each part are, for example, a thickness of 2 mm and an outer dimension of 50 mm × 50 m.
m, degree. The wiring pattern 1a has an inner end exposed to a step portion 1b protruding from an inner edge of the frame shape, an outer end exposed to a side surface, and a solder bump 4 disposed thereon. .

The heat spreader 2 fixed to the package substrate 1 by, for example, an adhesive or the like has, for example, a thickness of 1 mm and an outer dimension of about 30 mm × 30 mm. The material is, for example, easy to process, inexpensive,
It is made of, for example, copper (Cu), aluminum (Al), or an alloy thereof having high thermal conductivity.

The solder bump 4 has a diameter of, for example, 1 m.
m, for example, about 500 pieces, ie, 500 pieces
The number of input / output terminals on the order of pins can be secured. Further, as the semiconductor pellet 3, in the above-described example of dimensions, a pellet having a size of about 15 mm × 15 mm can be used.

In this case, an uneven portion 2a is formed on the externally exposed surface of the heat spreader 2 opposite to the surface on which the semiconductor pellet 3 is mounted, so that a separate member such as a radiation fin is not required. The heat radiation area of the heat spreader 2 itself is increased without increasing the projected area with respect to. FIG. 5 is a perspective view illustrating the heat spreader 2 according to the present embodiment by taking out the heat spreader 2. As illustrated in FIG. 5, the uneven portion 2 a has, for example, a plurality of grooves having a rectangular cross section.

The uneven portion 2 of such a heat spreader 2
3A, for example, as illustrated in FIGS. 3A to 3C, the heat spreader 2 is placed between the press mold 100 and the press mold 101 having the concavo-convex mold surface 100 a of an arbitrary shape formed on the opposing surface. It can be formed inexpensively by press working with pinching. In that case, the shape of the uneven portion 2a is
It can be arbitrarily controlled by the type of 00a, press pressure and the like.

Alternatively, as shown in FIG. 4, a rotating knurl 103 having an irregular pattern 103a of an arbitrary shape formed on the outer peripheral portion thereof is pressed against the heat spreader 2 so as to correspond to the irregular pattern 103a. The uneven portion 2a may be formed.

In FIGS. 1, 3 and 4, the uneven portion 2a formed on the heat spreader 2 is not limited to a groove having a rectangular cross section illustrated in FIG. Any shape may be used.

For example, as shown in FIG. 6, an uneven portion 2b having a mountain-shaped cross section, as shown in FIG. 7, a corrugated uneven portion 2c having a smooth cross section, or as shown in FIG. A large number of isolated block-shaped uneven portions 2d, a large number of isolated cylindrical uneven portions 2e as illustrated in FIG. 9, or a large number of cylindrical holes as illustrated in FIG. Any shape such as the uneven portion 2f can be used.

The formation of the above-mentioned uneven portions 2a to 2f on the heat spreader 2 is not limited to the above-described press working or knurling, but may be formed by cutting. Further, an arbitrary processing method such as etching using a desired pattern as a mask, processing using a laser beam, or the like can be used.

Hereinafter, an example of a method of manufacturing the above-described semiconductor device A according to the present embodiment will be described with reference to a flowchart of FIG.

A plurality of semiconductor pellets 3 are collectively formed in a semiconductor wafer by a known wafer process using photolithography (step 30).
1) After individually inspecting the probe etc. (step 30)
2) By being separated individually by dicing (step 303), it is provided to an assembling process in a chip shape as shown in FIG.

On the other hand, the package substrate 1 is formed, for example, by bonding and laminating a glass cloth base material of a desired shape with an epoxy resin or the like, and attaching a copper foil or the like to the surface or sandwiching the inside with a multilayer structure. Thereby, the wiring pattern 1a is formed (Step 304).

On the other hand, for example, the heat spreader 2
It is manufactured by forming the concave and convex portions 2a to 2f on one main surface of a thin plate made of, for example, copper or aluminum in a predetermined shape by an arbitrary processing method such as the above-described pressing (step 305).

Then, the package substrate 1 and the heat spreader 2 are assembled into a package by, for example, bonding or the like, with the surface of the heat spreader 2 on which the uneven portions 2a to 2f are formed facing outward (step 306).

It should be noted that the above-described steps 301 to 303 for producing a pellet, the step 304 for producing the package substrate 1 and the step 305 for producing the heat spreader 2 can be arbitrarily performed in parallel. The order relation is arbitrary.

Next, the semiconductor pellet 3 is fixed to the flat surface inside the heat spreader 2 of the package obtained in Step 306 by using a desired conductive adhesive or the like by pellet bonding (Step 307).

Thereafter, the plurality of bonding pads of the semiconductor pellet 3 and the wiring pattern 1a of the package substrate 1 are formed.
Then, wire bonding is performed for individually laying the bonding wires 5 made of a conductor such as a gold wire between the plurality of corresponding inner ends (step 308).

Next, the semiconductor pellet 3 located inside the package substrate 1 is sealed with a resin 6 by a method such as potting (step 309).

Thereafter, solder bumps 4 are formed to project from each of the outer ends of the wiring pattern 1a exposed on the outer surface of the package substrate 1 (step 310).

The semiconductor device A of the present embodiment manufactured by such a method is surface-mounted on a desired mounting object via the solder bumps 4.

The heat generated from the semiconductor pellet 3 of the operating semiconductor device A is efficiently radiated to the outside through a wide heat radiation area by the uneven portions 2a to 2f formed on the outer surface of the heat spreader 2.

Further, since no extra parts such as heat radiation fins are mounted, the height from the mounting surface to the surface on which the uneven portions 2a to 2f of the heat spreader 2 are formed does not increase, and the semiconductor device A is reduced in size, that is, mounted. Space can be reduced.

The structure of the semiconductor device is not limited to the assembly structure using the package substrate illustrated in FIG. 1, but may be a TAB (Tape Automat) as described below.
The present invention is also applicable to those having an assembly structure using an edBonding tape.

FIG. 11 is a sectional view showing a modification of the semiconductor device according to the present embodiment. This FIG.
The semiconductor device B illustrated in FIG. 1 includes a frame-shaped tape base 10a made of an insulator such as a polyimide resin, and a plurality of leads 10b made of a metal foil or the like radially formed on one main surface of the tape base 10a. And a support ring 10 attached to the main surface of the tape base 10a opposite to the lead 10b.
After bonding the bonding pads (not shown) of the semiconductor pellets 3 to the tips of the leads 10b of the TAB tape 10 composed of the heat spreader 2 and the like, the heat spreader 2 having the irregularities 2a to 2f on the outer surface is removed. The structure is such that the support ring 10c and the semiconductor pellet 3 are adhered and fixed with an adhesive. In addition, a plurality of leads 1
A plurality of solder bumps 11 are individually formed on the base end side of Ob. The semiconductor pellet 3 is sealed with the resin 12 by, for example, a method such as potting.

The dimensions of each part are, for example, as follows.
0a and the thickness of the support ring 10c are each 1
The lead 10b has a thickness of 35 μm, the solder bump 11 has an outer diameter of 500 μm, the thickness of the heat spreader 2 is 1000 μm or less in this case, and the total thickness is 2 mm or less.

As described above, in the case of the semiconductor device B of FIG. 11, the use of the TAB tape 10 makes the semiconductor device B thinner than the case of using the package substrate of FIG.
Although it is possible to reduce the cost, even in that case, it is possible to improve the heat radiation performance while maintaining the thin dimensions by adopting the TAB tape 10 by forming the uneven portions 2a to 2f and the like on the heat spreader 2 itself. Thus, there is no concern that the type of the semiconductor pellets 3 is restricted by the heat radiation performance of the heat spreader 2. Therefore, an effect is obtained that the semiconductor pellet 3 having a relatively high calorific value can be mounted in a thin and small package form.

FIG. 12 is a sectional view showing an example of the structure of a semiconductor device C showing a modification using a TAB tape. In the case of FIG. 12, the TAB tape 20 has the leads 20b and the tape base 20 on both the front and back surfaces of the tape base 20a.
a, and a conductive pattern 20c electrically connected to the lead 20b is formed, and a tip of the lead 20b is connected to the CCB via a solder bump 3a provided on the semiconductor pellet 3 side. It is connected.

The support ring 20d is provided with an adhesive layer 20e.
Is attached to the lead 20b via the support ring 20d, and further on the support ring 20d via the adhesive layer 20f.
The central portion is fixed to the semiconductor pellet 3 and the uneven portions 2a to
A peripheral portion of the heat spreader 2 that radiates heat at 2f is fixed.

The solder bumps 21 are made of TAB tape 2
It is arranged and formed on the conductor pattern 20c on the side opposite to the 0 lead 20b. The semiconductor pellet 3 is sealed with a potted resin 22.

In the case of the semiconductor device C shown in FIG.
The AB tape 20 is composed of the lead 20b and the conductor pattern 20.
Since the configuration is such that a plurality of conductor layers such as c are stacked, various settings of electrical characteristics such as impedance matching and reduction of inductance of a signal path from the semiconductor pellet 3 to the solder bump 21 can be performed. In addition to the improvement of the heat radiation performance by the uneven portions 2a to 2f formed in the semiconductor device, there is an advantage that the semiconductor pellet 3 having more various functions can be mounted.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist thereof. Needless to say, there is.

For example, the external connection electrode is not limited to a solder bump or the like, and may have a structure in which, for example, an insertion mounting type pin is protruded. Further, the material of the heat spreader is not limited to a metal or the like, and may be, for example, a resin or a ceramic having improved thermal conductivity by mixing a metal powder.

[0047]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

According to the semiconductor device of the present invention, it is possible to achieve both the reduction in manufacturing cost and the improvement in heat radiation performance.

Further, according to the semiconductor device of the present invention, there is obtained an effect that it is possible to achieve both a reduction in the outer dimensions and an improvement in the heat radiation performance.

Further, according to the semiconductor device of the present invention, there is obtained an effect that a semiconductor pellet having a large heat value can be mounted in a low-cost and small package structure.

Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to obtain an effect that both reduction in manufacturing cost and improvement in heat radiation performance can be achieved.

Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to achieve both the reduction in the size of the external dimensions and the improvement in the heat radiation performance.

Further, according to the method of manufacturing a semiconductor device of the present invention, there is obtained an effect that a semiconductor pellet having a large calorific value can be mounted in an inexpensive and small package structure.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a configuration of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present invention;

FIGS. 3A to 3C are conceptual views illustrating an example of a method of processing a heat spreader in a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps;

FIG. 4 is a conceptual diagram illustrating an example of a method of processing a heat spreader in a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps;

FIG. 5 is a perspective view illustrating a heat dissipation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 6 is a perspective view illustrating a heat radiation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 7 is a perspective view illustrating a heat dissipation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 8 is a perspective view illustrating a heat dissipation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 9 is a perspective view illustrating a heat radiation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 10 is a perspective view illustrating a heat dissipation member of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 11 is a cross-sectional view showing a modification of the semiconductor device manufactured by the method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 12 is a cross-sectional view showing a modification of the semiconductor device manufactured by the method for manufacturing a semiconductor device according to one embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Package board (frame structure) 1a Wiring pattern (wiring structure) 1b Step part 2 Heat spreader (heat radiating member) 2a-2f Uneven part 3 Semiconductor pellet 3a Solder bump 4 Solder bump (external connection electrode) 5 Bonding wire (wiring structure) 6 Resin 10 TAB tape (frame structure) 10a Tape base 10b Lead (wiring structure) 10c Support ring 11 Solder bump (external connection electrode) 12 Resin 20 TAB tape (frame structure) 20a Tape base 20b Lead (wiring structure) 20c Conductor Pattern (wiring structure) 20d Support ring 20e Adhesive layer 20f Adhesive layer 21 Solder bump (external connection electrode) 22 Resin 100 Press mold 100a Uneven surface 101 Press mold 103 Knurl 103a Uneven pattern A, B, C Semiconductor device

Claims (10)

[Claims] 1. A semiconductor device in which a semiconductor pellet having an arbitrary function is fixed to a heat radiating member, wherein the heat radiating member has an uneven shape. 2. The semiconductor device according to claim 1, wherein the frame structure has a frame shape and supports a peripheral portion of the heat radiation member, and a plurality of external connection electrodes protruding from a part of the frame structure. A wiring structure for electrically connecting the semiconductor pellet and the external connection electrode. 3. The semiconductor device according to claim 2, wherein the frame structure is a package substrate, and the wiring structure is provided on the package substrate and is connected to the external connection electrode; And a bonding wire provided between the semiconductor pellet and the semiconductor pellet. 4. The semiconductor device according to claim 1, wherein said frame structure is a TAB tape, and said wiring structure is
A semiconductor device comprising a plurality of leads provided on an AB tape and connecting the semiconductor pellet and the external connection electrode. 5. The semiconductor device according to claim 2, wherein said external connection electrode is formed of a solder bump. 6. The semiconductor device according to claim 1, wherein said semiconductor pellet is sealed with a potting resin. 7. A method of manufacturing a semiconductor device comprising fixing a semiconductor pellet having an arbitrary function to a heat radiating member,
A method of manufacturing a semiconductor device, comprising a step of forming an uneven shape on the heat dissipation member. 8. The method of manufacturing a semiconductor device according to claim 7, wherein: the step of fixing the heat dissipation member to a frame-shaped package substrate; the step of forming an external connection electrode on the package substrate; Electrically connecting the semiconductor pellet with the semiconductor pellet in an arbitrary order. 9. The method for manufacturing a semiconductor device according to claim 7, wherein the step of connecting the semiconductor pellet to a lead on a TAB tape, the step of fixing the heat radiation member to the TAB tape, and an external connection to the TAB tape And a step of forming an electrode is performed in an arbitrary order. 10. The method of manufacturing a semiconductor device according to claim 8, further comprising a step of sealing the semiconductor pellet with a resin.