JPH11274867A - Power amplifier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power amplifier capable of varying an operating frequency and an operating bias point. SOLUTION: An MMIC 110 integrates two stages of FET 112 and 113, matching circuit parts 111, 113 and 115 at three positions and gate bias resistors 116 and 117 at two positions. A drain bias circuit part 101 and a gate bias circuit part 102 are formed on a mounting board 1.00 and respectively connected to drain voltage supply terminals 121 and 122 and gate voltage supply terminals 123 and 124. A signal is inputted from a signal input terminal 126 and outputted from a signal output terminal 127. The operating frequency can be controlled by changing the position of a bypass capacitor in the transmission line of the drain bias circuit part 101 or the like. The operating bias point can be controlled by impressing a gate bias through resistance division while utilizing a variable resistor in the gate bias circuit part 102.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power amplifier using a high-frequency signal amplifying FET mounted on a GaAs substrate used for mobile communication and the like, and more particularly, to an operating frequency and an operating bias point which can be changed. It relates to a power amplifier.

[0002]

2. Description of the Related Art In recent years, various mobile communication systems have been studied in various countries around the world, and a transmission power amplifying device corresponding to each system has been demanded.

Conventionally, as a power amplifying device for transmission in this field, a module using GaAs MESFET, JFET or HBT, an integrated integrated circuit (hereinafter referred to as MM)
Various types of configuration examples have been reported. For example, in the structure of a general MMIC, a transistor and a diode are formed on a GaAs substrate by utilizing the fact that a GaAs band gap is wide and the electrical conductivity of intrinsic GaAs is low even at room temperature, so that a semi-insulating GaAs substrate can be obtained. , And passive elements such as a spiral inductor, an interdigital capacitor, an MIM capacitor, a transmission line, and a thin film resistor are integrated and integrally formed. Also,
As disclosed in IEEE GaAs IC sympo. Tech. Digest pp. 53-56 1993, a module (multi-chip IC) in which an MMIC incorporating the above-described active and passive elements is formed inside a package and mounted on a substrate. Have been reported. Then, the MMIC or module is mounted on a substrate and applied to various uses. In other words, when assembled using a single transistor and individual components, as the operating frequency increases, large variations in microwave characteristics occur due to errors in the mounting positions of the components and variations in the characteristics of the components themselves, and the manufacturing yield is reduced. Although it is lowered, by configuring such an MMIC or module, predetermined characteristics can be stably exhibited.

[0004]

However, on the other hand,
The conventional MMICs and modules have the following problems. That is, since these are designed so as to be adapted only to a specific system, satisfactory characteristics may not be obtained when used at different operating frequencies. Further, the operation bias point or operation class (for example, class A, class B, etc.) of the FET cannot be changed from outside. For example, the above-mentioned IEEE GaAs IC sympo. Tech. Di.
In the module shown in gest. pp. 53-56 1993, it was impossible to change the operating frequency and the operating bias point from the outside because all the circuit blocks were formed inside the package.

In MMICs and modules, G
Since the occupation area of passive elements such as capacitors and inductances mounted on the aAs substrate is large, expensive GaAs
There is a problem that the chip size of the s-substrate becomes large and it is difficult to reduce the manufacturing cost.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a first object of the present invention is to reduce the operating frequency of an MMIC without causing a variation in characteristics when the MMIC is incorporated into a mounting substrate. An object of the present invention is to provide an amplifier configured to perform a corresponding adjustment.

A second object is to reduce the manufacturing cost by reducing the area occupied by the compound semiconductor substrate in a high-frequency circuit using an expensive compound semiconductor substrate or a power amplifier equipped with this high-frequency circuit. It is in.

[0008]

In order to achieve the first and second objects, according to the present invention, an MMIC and an MMI are provided.
An operating frequency is made variable and an operating bias point is made variable by dividing and forming a circuit part constituting a power amplifier on a substrate on which C is mounted.

According to a first aspect of the present invention, there is provided a power amplifier including an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. At least one amplifying FET comprising a gate electrode, a drain electrode, and a source electrode provided for amplifying a high-frequency signal, and a drain provided in the integrated circuit for supplying a voltage to a drain electrode of the amplifying FET. A voltage supply terminal, a drain power supply section provided on the substrate outside the integrated circuit and connected to the drain voltage supply terminal, and a drain supply section provided on the substrate outside the integrated circuit section and viewed from the drain electrode of the amplification FET. An impedance adjustment member for adjusting the impedance of the drain power supply side, wherein the impedance adjustment member includes the integrated circuit. A transmission line connected between the drain voltage supply terminal and the drain power supply unit for transmitting a high-frequency signal, and a transmission line provided on a substrate outside the integrated circuit; A capacitor mounting portion is configured such that a capacitor can be mounted between the transmission line and the mounting portion so that the mounting portion can be changed, and the operating frequency can be changed by changing the mounting portion of the capacitor.

Thus, since the impedance adjusting member serving as the drain bias circuit portion is formed on the mounting board, it is possible to change the operating frequency on the mounting board, which cannot be easily performed by the conventional module or MMIC. Use at operating frequencies becomes possible. Further, since the drain bias circuit section is provided on the mounting substrate, the parasitic resistance of the drain bias circuit section is significantly reduced as compared with the case where the drain bias circuit is formed inside an integrated circuit such as an MMIC. Therefore, the power supply voltage is transmitted to the drain electrode of the amplifying FET without being subjected to the voltage drop by the drain bias circuit section, and the deterioration of the saturation output characteristic is suppressed, and the decrease in the gain and the efficiency is suppressed as compared with the conventional integrated circuit. become. In addition, transmission lines, capacitors,
By mounting a member occupying a large area such as an inductor on the mounting substrate side, the area occupied by the integrated circuit can be reduced, and the cost of a high-frequency power amplifier using an expensive compound semiconductor substrate is also reduced. Will be. In that case, on the mounting substrate outside the integrated circuit, by changing the mounting position of the capacitor in the transmission line, the amplification FET
The impedance on the drain power supply side as viewed from the drain electrode changes. Therefore, the above-described effects can be easily obtained.

According to a second power amplifier of the present invention, there is provided a power amplifier including an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. At least one amplifying FET comprising a gate electrode, a drain electrode, and a source electrode provided for amplifying a high-frequency signal, and a drain provided in the integrated circuit for supplying a voltage to a drain electrode of the amplifying FET. A voltage supply terminal, a drain power supply section provided on the substrate outside the integrated circuit and connected to the drain voltage supply terminal, and a drain supply section provided on the substrate outside the integrated circuit section and viewed from the drain electrode of the amplification FET. An impedance adjusting member for adjusting the impedance of the drain power supply side, and the drain voltage supply terminal on a substrate outside the integrated circuit. A capacitor interposed between the substrate and the ground, wherein the impedance adjusting member is provided between the drain voltage supply terminal and the drain power supply unit on the substrate outside the integrated circuit; Comprises an inductor mounting portion for mounting an inductor connected to the drain voltage supply terminal and the drain power supply portion, respectively, and is configured to be capable of changing the operating frequency by changing the inductance value of the inductor.

Thus, the impedance on the drain power supply side as viewed from the drain electrode of the amplifying FET changes due to the change in the inductance value of the inductor. Therefore, the same operation and effect as described above can be obtained.

In the first and second power amplifiers, a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET is provided on a substrate outside the integrated circuit. First and second gate power supply units, and first and second resistance members interposed between the gate voltage supply terminal and the first and second gate power supply units, respectively. At least the second one of the resistance members
The resistance member may be a variable resistor provided on a substrate outside the integrated circuit, and the operating bias point of the amplifying FET may be changed by changing the resistance value of the variable resistor.

Thus, the second resistor composed of a variable resistor
When the resistance value of the resistance member is changed, the voltage supplied from one of the first power supply and the second power supply is divided between the gate of the FET and the other of the first power supply and the second power supply. The operating bias point of the amplifying FET is changed on the mounting substrate. By changing the operation bias point, it is possible to change the class A operation-class B operation or the like so as to be compatible with a system using an integrated circuit. In addition, FET for amplification in manufacturing
Even if there is a variation in the threshold value, the variation of the operating bias point and the accompanying amplification F
Since the fluctuation of the input and output impedance of the ET is suppressed, the yield of the integrated circuit is improved, and the cost of the power amplifier is reduced. Further, since a slight change in the threshold value and the like of the amplifying FET is allowed, the design margin can be increased.

In this case, the amplifying FET is replaced with a pre-stage FET.
And a rear-stage FET, wherein the power amplifier functions as a two-stage power amplifier, and the gate voltage supply terminal includes a front-stage FET gate voltage supply terminal and a rear-stage FET gate voltage supply terminal, and the first gate power supply Section connected to the above-mentioned front-stage FET gate voltage supply terminal.
An ET gate power supply unit; the second gate power supply unit as a second-stage FET gate power supply unit connected to the second-stage FET gate voltage supply terminal; and the second resistor member, which is the variable resistor, as the first-stage FET gate voltage supply terminal. And the preceding FE
A first resistor member provided between the T-gate power supply unit and the rear-stage FET gate voltage supply terminal and the rear-stage FET gate power supply unit; And a fixed resistor interposed between the first stage FET gate power supply unit and the second stage FET gate voltage supply terminal and the second stage FET gate power supply unit.

Thus, the above-described effects can be obtained while securing a high gain by the two-stage power amplifier. In this case, while the first and second power supply units are fixed power supplies, the change of the resistance value of the second resistance member causes the front-stage FET and the rear-stage FE to change.
Since the operation bias point of T can be changed, the configuration is also simplified.

Further, in this case, by connecting the above-mentioned first stage FET gate voltage supply terminal and the above-mentioned second stage FET gate voltage supply terminal via a third resistance member, each of the amplification FETs has a different operation class. The operation bias point between the front-stage FET and the rear-stage FET can be changed.

Further, a fixed resistor is provided between the gate electrode of the amplifying FET and the gate voltage supply terminal. Since the transmission of the high-frequency signal to the outside is cut off, the influence of the change in the resistance value of the second resistance member on the matching condition in the integrated circuit is suppressed.

According to a third aspect of the present invention, there is provided a power amplifier including an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. At least one amplifying FET comprising a gate electrode, a drain electrode, and a source electrode provided for amplifying a high-frequency signal, and a gate provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET. A voltage supply terminal, first and second gate power supplies provided on a substrate outside the integrated circuit, and interposed between the gate voltage supply terminal and the first and second gate power supplies, respectively. A first resistance member and a second resistance member;
At least the second resistance member of the two resistance members is a variable resistor provided on a substrate outside the integrated circuit,
The operating bias point of the amplifying FET can be changed by changing the resistance value of the variable resistor. A fixed resistor is provided between the gate electrode of the amplifying FET and the gate voltage supply terminal. Is interposed.

Thus, the transmission of the high-frequency signal in the integrated circuit to the outside is interrupted by the fixed resistor provided in the integrated circuit, so that the matching in the integrated circuit by changing the resistance value of the second resistance member. The effect on the condition will be suppressed.

In the first power amplifier, a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET and a second power supply terminal provided on a substrate outside the integrated circuit. A first and a second gate power supply; and a first and a second resistance member interposed between the gate voltage supply terminal and the first and the second gate power supply, respectively. Wherein at least the second resistance member is a fixed resistor attached to a resistor attachment portion provided between the gate voltage supply terminal and the second gate power supply portion on a substrate outside the integrated circuit; The operating bias point of the amplifying FET can be changed by changing the resistance value of the fixed resistor.

Thus, the same operation and effect as described above can be obtained by changing the resistance value of the fixed resistor mounted on the resistor mounting portion.

In this case, the amplifying FET is replaced by a pre-stage FET.
And a rear-stage FET. The power amplifier functions as a two-stage power amplifier. The gate voltage supply terminal includes a front-stage FET gate voltage supply terminal and a rear-stage FET gate voltage supply terminal. Section connected to the above-mentioned front-stage FET gate voltage supply terminal.
An ET gate power supply unit; the second gate power supply unit as a second-stage FET gate power supply unit connected to the second-stage FET gate voltage supply terminal; and a resistor mounting unit to which the second resistance member is mounted is connected to the first-stage FET gate voltage. A first resistor member provided between the power supply terminal and the front-stage FET gate power supply unit or between the rear-stage FET gate voltage supply terminal and the rear-stage FET gate power supply unit; FET gate voltage supply terminal and the preceding stage FET
A fixed resistor may be interposed between the gate power supply unit and the other of the rear FET gate voltage supply terminal and the rear FET gate power supply unit.

[0024] Further, a fixed resistor may be further provided between the gate electrode of the amplifying FET and the gate voltage supply terminal.

Further, in each of the power amplifiers, the first resistance member is provided in the integrated circuit, a gate electrode and a drain electrode are connected to each other, and a drain electrode is connected to a gate electrode of the amplification FET. Thus, the adjustment FET can be obtained.

According to a fourth power amplifier of the present invention, there is provided a power amplifier including an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. At least one amplifying FET comprising a gate electrode, a drain electrode, and a source electrode for amplifying a high-frequency signal; and a gate voltage provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET. A supply terminal, first and second gate power supply units provided on a substrate outside the integrated circuit, and a third gate power supply unit interposed between the gate voltage supply terminal and the first and second gate power supply units. 1, a second resistance member, and the FE for amplification
A fixed resistor interposed between the gate electrode of T and the gate voltage supply terminal, wherein at least the second resistor member of the two resistor members is connected to the gate on a substrate outside the integrated circuit. A fixed resistor attached to a resistor attachment portion provided between a voltage supply terminal and the second gate power supply portion, and a change in an operating bias point of the amplifying FET by changing a resistance value of the fixed resistor. Can be configured.

Thus, when the idle current fluctuates due to variations in the threshold value of the amplifying FET, the idle current of the adjusting FET formed in the same integrated circuit as the amplifying FET also changes. Therefore, by utilizing the change in the idle current of the adjusting FET, the amplification F
It is possible to control to automatically reduce the variation of the idle current of the ET.

According to a fifth power amplifier of the present invention, there is provided a power amplifier including an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. At least one amplifying FET comprising a gate electrode, a drain electrode, and a source electrode for amplifying a high-frequency signal; and a gate voltage provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET. A supply terminal, first and second gate power supply units provided on a substrate outside the integrated circuit, and a third gate power supply unit interposed between the gate voltage supply terminal and the first and second gate power supply units. And a second resistance member, wherein at least the second resistance member of the two resistance members is connected between the gate voltage supply terminal and the second gate power supply on a substrate outside the integrated circuit. A fixed resistor attached to a resistor attachment portion provided in the first resistor. The operating bias point of the amplifying FET can be changed by changing a resistance value of the fixed resistor. The member is an adjustment FET provided in the integrated circuit, the gate electrode and the drain electrode being connected to each other, and the drain electrode being connected to the gate electrode of the amplification FET.

This also provides the above-described effects.

According to a sixth aspect of the present invention, there is provided a power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate on which the integrated circuit is mounted. An amplifying FET comprising at least one of a gate electrode, a drain electrode, and a source electrode provided for amplifying at least one high-frequency signal; a gate electrode and a drain electrode provided in the integrated circuit, wherein the gate electrode and the drain electrode are connected to each other; Are connected to the gate electrodes of the amplifying FETs, and first and second gates provided in the integrated circuit for supplying voltages to the gate electrodes of the amplifying and adjusting FETs, respectively. A first voltage supply terminal provided on a substrate outside the integrated circuit and connected to the first voltage supply terminal via the adjustment FET;
A gate power supply unit, provided on a substrate outside the integrated circuit,
A second gate power supply unit connected to the second voltage supply terminal; and a second amplification unit provided on a substrate outside the integrated circuit.
A resistor is provided in a path from a connection between the gate electrode of the ET and the drain electrode of the adjustment FET to the second gate power supply.

As a result, when the idle current of the amplifying FET, which is a high-frequency FET, increases due to the variation in the threshold value, the idle current of the adjusting FET also increases. When the second power supply current flows from the first power supply, a voltage drop occurs due to the resistor, and the gate potential of the amplifying FET connected downstream of the resistor decreases. Therefore,
It is automatically controlled so that the idle current of the amplifying FET is reduced. Further, when the idle current of the amplifying FET becomes too small due to the variation of the threshold value, the idle current of the amplifying FET is automatically controlled in the direction of increasing the idle current of the amplifying FET by an operation opposite to the above-described operation. That is, the variation of the idle current of the amplifying FET caused by the variation in the process is suppressed.

Also in the first power amplifier, an adjusting FET provided in the integrated circuit, wherein a gate electrode and a drain electrode are connected to each other, and a drain electrode is connected to a gate electrode of the amplifying FET. And the amplifying FET and the adjusting FET provided in the integrated circuit.
First and second gate voltage supply terminals for supplying voltages to the respective gate electrodes, and provided on a substrate outside the integrated circuit, and connected to the first voltage supply terminal via the adjustment FET. A first gate power supply unit, a second gate power supply unit provided on the substrate outside the integrated circuit and connected to the second voltage supply terminal, and an amplification FET provided on the substrate outside the integrated circuit; And a resistor interposed in a path from the connection between the gate electrode of the first FET and the drain electrode of the adjustment FET to the second gate power supply.

The amplifying FET is composed of a front-stage FET and a rear-stage FE.
T, the power amplifier functions as a two-stage power amplifier, and the first gate voltage supply terminal is:
A first-stage FET gate voltage supply terminal and a second-stage FET gate voltage supply terminal; and one of the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal is connected to the first gate power supply via the adjustment FET. And the other of the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal is connected to the second gate power supply unit via the resistor, so that the first-stage power amplifier is connected to the first-stage power amplifier. Variations in the idle current of both the FET and the post-stage FET are suppressed.

Further, a resistor interposed between the first gate voltage supply terminal and the second power supply is a variable resistor,
The amplifying FET by changing the resistance value of the variable resistor
By making it possible to change the operating bias point of
It is possible to change the operation class by changing the operation bias point of the amplification FET using the variable resistor. In particular, by adjusting the resistance value of the variable resistor, variations in the idle current due to fluctuations in the threshold value are suppressed, so that variations in the idle current due to variations in the manufacturing process and the like can be extremely reduced. Become.

A fixed resistor can be provided between the gate electrode of the amplifying FET and the first gate voltage supply terminal.

In the case of performing two-stage amplification, between the gate electrode of the front-stage FET and the gate voltage supply terminal of the front-stage FET and between the gate electrode of the rear-stage FET and the gate voltage supply terminal of the rear-stage FET. Each can be provided with a resistor.

As a result, the transmission of the high-frequency signal in the integrated circuit to the outside is interrupted by the fixed resistor provided in the integrated circuit, so that the matching in the integrated circuit by changing the resistance value of the second resistance member is prevented. The effect on the condition will be suppressed.

[0038]

Embodiments of the present invention will be described below.

(First Embodiment) First, a two-stage power amplifier according to a first embodiment will be described with reference to FIGS.

FIG. 1 is a block diagram showing the configuration of the two-stage power amplifier according to the first embodiment. As shown in the figure, in the two-stage power amplifier according to the present embodiment, an MMIC 110 is mounted on a mounting substrate 100, and a drain bias circuit unit 101 and a gate bias circuit unit 102 are mounted on the mounting substrate 100. It is formed. This is a feature of the present embodiment.

In the MMIC 110, an input matching circuit 111, a front-stage FET 112, an interstage matching circuit 113, a rear-stage FET 114, an output matching circuit 115, a front-stage FET gate bias resistor 116, and a rear-stage FET gate bias resistor 117 are provided. Are arranged. It should be noted that all of these elements and circuit parts originally contribute to the matching and become a part of the matching circuit part. However, in order to clarify the effect here, they will be referred to as such. Also, each code 12
1, 122, 123, 124, 125, 126, 127
Are the first-stage FET drain voltage supply terminal, the second-stage FET drain voltage supply terminal, and the first-stage FET of the MMIC 110, respectively.
Gate voltage supply terminal, post-stage FET gate voltage supply terminal,
Indicates a ground terminal, signal input terminal, and signal output terminal.

Here, the configuration of each of the above matching circuits is as shown in FIGS. 6A, 6B and 6C as described later.

In the conventional module and MMIC, since these elements and circuit portions are all integrated in the package, it is difficult to externally adjust the operating frequency and the operating bias point. Then, as described below, they can be easily performed.

For example, the impedance of the drain bias circuit 101 is a factor that affects the load impedance or the source impedance for the FET. Therefore, the operating frequency can be changed by changing the impedance of the drain bias circuit unit 101.

On the other hand, if such processing is performed by a single FET having no matching circuit, for example, a single FET may be required to change the entire matching circuit because the matching condition changes.
However, in the present embodiment, the drain bias circuit unit 10
Since the three matching circuit sections 111, 113, and 115 are designed in consideration of the impedance change amount of 1 in advance,
By simply changing the impedance of the drain bias circuit unit 101, it is possible to easily use it at a different frequency.

An example of a configuration for setting the impedance so as to satisfy the matching condition according to the selection of the operating frequency will be described below.

FIGS. 2A and 2B are diagrams showing examples of the configuration of the drain bias circuit section 101 of the present embodiment.

In the example shown in FIG. 2A, the strip line 20 is a transmission line configured to transmit a high-frequency signal.
The drain bias circuit 101 is configured using the bypass capacitors 202 and 204 and the bypass capacitors 202 and 204. One end of each of the strip lines 201 and 203 has a drain power supply Vd.
d and the other end is the FE before and after the MMIC 110.
They are connected to T drain voltage supply terminals 121 and 122, respectively. The strip line 201 is provided with a capacitor mounting portion which is exposed in advance without being covered with a skin serving as a protective film, and according to an operating frequency when the MMIC 110 is used, the bypass capacitors 202 and 2 are provided.
The mounting position is determined so that the mounting position is determined and the mounting position is satisfied. Specifically, the impedance of the drain bias circuit 101 is MMIC1
It is determined by the strip line lengths L1 and L2 (see FIG. 2A) from 10 to the bypass capacitors 202 and 204, and these can be easily changed by changing the installation positions of the bypass capacitors 202 and 204.

In the example shown in FIG. 2B, the chip inductors 205 and 207 and the
06 and 208 are arranged one by one to constitute the drain bias circuit 101. Each chip inductor 20
5 and 207 are configured to be attachable so that one end is connected to the drain power supply Vdd and the other end is connected to the front-stage or rear-stage FET drain voltage supply terminals 121 and 122 of the MMIC 110. Further, the chip inductor 205,
An inductor mounting portion for mounting bypass capacitors 206 and 208 is provided between the drain power supply side end of 207 and the ground. In this example, the impedance of the drain bias circuit 101 is
Is determined by the inductance value of 5,207,
The matching condition can be satisfied by attaching a chip inductor having an inductance value suitable for the operating frequency when the MMIC 110 is used.

The bypass capacitor 2 used here
Numerals 06 and 208 are inserted so that the impedance of the drain power supply Vdd or its fluctuation does not affect the FET inside the MMIC 110.
By designing the MMIC 110 such that the influence on the FET falls within an allowable range in consideration of the impedance of dd and its fluctuation, the bypass capacitors 206 and 208 can be omitted.

As described above, in the present embodiment, the following effects can be obtained by forming the drain bias circuit 101 not in the MMIC 110 but in the mounting substrate 100.

First, the process of changing the operating frequency, which has been difficult to integrate inside the MMIC 110, can be easily performed by forming the drain bias circuit section 101 on the mounting substrate 100.

The drain bias circuit section 101 is set to M
By moving from the inside of the MIC 110 to the mounting substrate 100, the chip area of the MMIC 110 using an expensive GaAs substrate can be reduced, and the cost of the MMIC 110 itself can be reduced.

Further, the parasitic resistance of the drain bias circuit 101
The power supply voltage is applied to the drain electrode of the FET without being subjected to a voltage drop by the drain bias circuit 101 because the power supply voltage is greatly reduced as compared with the case where the power supply voltage is formed inside the internal circuit 110. Therefore, the deterioration of the saturation output characteristic is suppressed, and the decrease in gain and efficiency is suppressed as compared with the conventional MMIC.
The characteristics are improved on average, and the yield of the MMIC 110 is also improved.

In the present embodiment, the drain bias circuits 101 of each stage of the two-stage power amplifier are formed on the mounting substrate 100. However, the present invention is not limited to such an embodiment, and at least one of them is provided. Is the mounting board 100
What is necessary is just to be formed on the top. In an amplifier having one or three or more amplification stages, the same effect can be obtained even if one or several arbitrary portions are formed on a mounting substrate.

The same effect can be obtained by combining a drain bias circuit using strip lines and bypass capacitors and a drain bias circuit using only chip inductors and bypass capacitors or chip inductors in two or more stages of amplifiers.

Incidentally, the gate bias circuit 102 shown in FIG. 1 also affects the matching condition similarly to the drain bias circuit section 101, but the adjustment at a high frequency is performed not only in the drain bias circuit section 101 but also in the gate bias circuit section 102. On the other hand, the necessity of performing the operation may lead to complicated processing. Thus, in the present embodiment, the gate bias circuit unit 102 performs only DC adjustment, and forms and arranges the gate bias resistors 116 and 117 inside the MMIC and separates them in high frequency so as not to affect high frequencies. By doing so, the effect can be ignored. In the configuration shown in FIG. 1, the gate bias resistor 11
6 and 117 are connected to the gate electrodes of the FETs 112 and 114, but are not directly connected to the gate electrodes but are connected to inductors or resistors connected to the gate electrodes.
The effect of transmitting a direct current and separating a high frequency is naturally obtained.

On the other hand, in the two-stage power amplifier having such a configuration, the FET gate voltage supply terminals 12
By applying a desired voltage to 3,124, the operating bias point can be changed. However, it may be cumbersome to prepare a variable voltage source only for gate bias adjustment and to adjust two adjustment points individually as in the first embodiment. Therefore, next, a configuration of a voltage source for supplying a fixed voltage and a gate bias circuit that can simultaneously adjust the operation bias points of two FETs by adjusting the resistance value at one location will be described below.

FIG. 3 is an electric circuit diagram of the gate bias circuit section 102 shown in FIG. As shown in the figure, fixed resistors 301 and 302 and a variable resistor 303 are arranged in series between a ground and a gate power supply Vgg, and a resistance division potential of this potential difference is applied to a gate voltage supply terminal 1 of the MMIC 110.
23 and 124. Here, the gate power supply Vgg is the second gate power supply according to claim 8, the variable resistor 303 is a second resistance member, the ground is the first gate power supply, and the fixed resistor 301 (or 302) is used. ) Corresponds to the first resistance member.

Next, in the present embodiment, the gate bias circuit 102 is provided not in the MMIC 110 but in the mounting substrate 100.
The following effects can be obtained by forming the inside.

For example, when the FET in the MMIC 110 is a depletion-type FET and the gate power supply Vgg supplies a negative potential, the variable resistor 303 is used when the threshold value of the FET varies to the negative side. The drain current when no signal is input (hereinafter referred to as idle current) by setting the gate bias potential to the negative side by reducing the value of
Can be kept constant. The effect on the yield by keeping the idle current constant will be described later.

The bias point can be easily changed by the variable resistor 303 even for FETs having the same threshold value, for example, class A operation (50% Idss bias) and B level.
Class operation (0% Idss bias) in front stage FET, rear stage F
It is also possible to set ET individually. This means can be realized by a variable resistor.
It is difficult to form it inside, and it can be realized only by mounting it on a mounting board as in this embodiment.

In the present embodiment, the variable resistor 303 is arranged in the gate bias circuit section 102. However, the present invention is not limited to this embodiment. MM as resistor mounting part
When the IC 110 is mounted on the mounting board 100, a fixed resistor having a resistance value suitable for the operating frequency to be used may be attached. With such a configuration, the same effect as that of the present embodiment can be obtained, but this can also be realized only by mounting the gate bias circuit unit 102 on the mounting substrate 100.

In this embodiment, since the three matching circuit portions 111, 113, and 115 are designed in consideration of the amount of change in the impedance of the FET due to the change in the gate bias, it can be easily used under different gate bias conditions. It is possible.

Note that the same effect can be obtained in a power amplifier having one or three or more amplification stages for a gate bias circuit for applying a gate potential by resistance division. Also, it is not necessary to form and mount all the circuit elements constituting the gate bias circuit on the mounting board. At least the mounting section of the variable resistor or the fixed resistor is formed and mounted on the mounting board. MMI element
The same effect can be obtained even if it is configured to be formed on C. Further, in a power amplifier having a multi-stage configuration, a similar effect can be obtained by providing a gate bias circuit section for arbitrary several gate bias terminals.

Next, the effect of this embodiment will be described with reference to FIGS.
This will be described with reference to FIG.

FIG. 4 is a frequency characteristic diagram showing operating frequency variability when the strip line length of the pre-stage drain bias circuit is changed. In FIG. 4, the horizontal axis represents the frequency (GH
z), and the vertical axis indicates forward gain S21 (dB), respectively.
Note that the input power is about 0 dBm. As shown in FIG. 4, when the strip line length of the pre-stage drain bias circuit 101 is 18 mm, the maximum point of the forward gain S21 is 1.8.
The maximum point of the forward gain S21 was changed to 2.10 by changing the strip line length to 2 mm.
It can be seen that the frequency shifts to GHz. This operation is the same in the subsequent-stage drain bias circuit. Therefore,
By using the power amplifier of the present invention, the high frequency characteristics of the power amplifier can be adjusted on the mounting board, so that the operating frequency can be changed without changing the mounting board or the MMIC. In other words, high-frequency adjustment can be performed after the MMIC and the mounting board are completed.
Even if a problem occurs due to deviation from 0Ω or insufficient grounding, it is possible to quickly respond. Also, the design margin of the MMIC and the mounting board at the time of designing the power amplifier increases,
It can be put to practical use in a short time.

FIG. 5 shows that the sum of the idle currents of the front-stage FET 112 and the rear-stage FET 114 is constant (150 m) using a variable resistor 303 with respect to the MMIC having 23 samples.
FIG. 6 is a diagram illustrating a variation in operating current of the power amplifier when adjustment is performed to satisfy A) and a variation in operating current of the power amplifier when this process is not performed. The output power is 22 dBm. As shown in FIG. 5, by adjusting one portion of the variable resistor 303 of the gate bias circuit 102, the variation is reduced, the yield of the MMIC and the power amplifier is improved, and the cost is reduced. Needless to say, the operation class of the FET can be easily changed.

As described above, the respective effects can be obtained by providing the drain bias circuit portion 101 and the gate bias circuit portion 102 on the mounting substrate. However, a new effect can be obtained by having both of them. Occurs. For example, in a Japanese digital cordless telephone system called PHS used in the 1.9 GHz band, an FET is used in an operation close to class A because waveform distortion is a problem. On the other hand, in a digital cordless telephone system used in Europe called DECT which is used in the range of 1.88 GHz to 1.9 GHz, the waveform distortion is not so problematic, and is used in operation close to class B with good efficiency. Therefore, if both the drain bias circuit section and the gate bias circuit section are provided on the mounting substrate, it is possible to cope with both systems having different operation frequencies and operation classes.

As described in detail above, the effects of the power amplifier of the present embodiment are that the frequency can be adjusted on the mounting substrate, the characteristic deterioration due to the voltage drop is improved, the chip area of the MMIC is reduced, and the power is reduced. Increased amplifier yield, FE
The operation bias point of T is changed to increase the margin in the design of the mounting board. Table 1 shows a comparison with the case where the conventional MMIC and module are used.

[0071]

[Table 1]

Here, the conventional module refers to a module having a substrate in which a pattern for mounting individual components such as a chip component and an FET is formed inside a package.

The same effect can be obtained with FETs other than GaAs MESFETs.

Here, the voltage of the power supply used in this embodiment,
The element values and characteristics of each element constituting the mounting substrate, the drain bias circuit section, the gate bias circuit section, and the MMIC are summarized below.

The voltage Vdd of the drain power supply shown in FIG. 2 is 3.5V. Further, the voltage Vg of the gate power supply shown in FIG.
g is -4.7V.

The mounting substrate 100 shown in FIG.
6. A 1 mm thick Teflon substrate.

The bypass capacitors 202 and 2 shown in FIG.
04, 206, and 208 are chip capacitors of 100 pF, and the strip lines 201 and 203 have a line width of 0.5.
mm, and the chip inductors 206, 208
A 6 mm × 0.8 mm type chip inductor was used.

The fixed resistors 301 and 302 shown in FIG. 3 use chip resistors of 2.2 kΩ and 150 Ω, respectively, and the variable range of the variable resistor 303 is 300 Ω to 5 kΩ.

The first-stage FET 112 and second-stage FE shown in FIG.
T is a GaAs MESFET whose threshold value is-
3.0V, the gate width is 1mm for the first-stage FET, and the second-stage FE
At T, it is 4 mm. The gate bias resistor 116 of the front-stage FET 112 is 1 kΩ, and the gate bias resistor 117 of the rear-stage FET 114 is 2 kΩ.

The details of the input matching circuit 111, the interstage matching circuit 113, and the output matching circuit 115 shown in FIG.
A, FIG. 6B, and FIG. 6C, respectively, between the signal input terminal 126 and the pre-stage FET gate electrode 611, and the pre-stage FET drain electrode 612 and the post-stage FET gate electrode 6, respectively.
13, after-stage FET drain electrode and signal output terminal 127
The capacitor 601 is 1 pF, the inductor 602 is 6 nH, the capacitors 603 and 604 are 3 pF and 6 pF, respectively, the inductor 605 is 5 nH, the inductor 606 is 3 nH, and the capacitor 607 is 2 pF.

Although not shown because they do not contribute to the matching, an input coupling capacitor and an output coupling capacitor of 100 pF are mounted on the mounting board, respectively, as shown in FIGS.
Was measured.

(Second Embodiment) Next, a second embodiment will be described.

FIG. 7 shows an MMIC for explaining the source pad arrangement of the MMIC which is the high-frequency semiconductor device used in the present invention.
FIG. 8 is a plan view of the MIC 700, and FIG.
7 shows details of the ESFET 702. Pre-stage FET, two MESFETs on a semi-insulating GaAs substrate
701 and a rear-stage FET 702 are arranged. Further, an input matching circuit 703 is arranged between the front-stage FET and the input pad 706, and the front-stage FET 701 and the rear-stage FET 7 are arranged.
02, an interstage matching circuit 704 is provided,
An output matching circuit 705 is provided between the ET 702 and the output pad 707.

The FETs 701 and 702 are provided with gate bias pads 711 and 721, drain pads 712 and 722, and source pads 713 and 723, respectively. The matching circuits 703, 704, 7
05 are spiral inductors 731 and 74, respectively.
1,751, MIM capacitors 732, 742, 74
3,752 and the like.

Here, a feature of this embodiment is that
The source pad 723 of the ET 702 is arranged at two locations at both ends of the latter-stage FET 702 and at both ends of the semi-insulating GaAs substrate after a source wiring is drawn out in a direction substantially perpendicular to the longitudinal direction of the gate electrode. By arranging in this manner, the wire bonding operation can be performed smoothly, the grounding can be reliably performed, and the source inductance is reduced by shortening the connection length between the wiring and the wire used for grounding. Therefore, FET7
02 can be improved. Further, by disposing the source pad 723 near the corner of the semi-insulating GaAs substrate, an inductor having a large occupied area can be reduced.
It is possible to provide a margin for being arranged inside the As substrate, and it is possible to reduce the area by effectively using the semi-insulating GaAs substrate.

The capacitors 732, 742, 74
By connecting 3,752 to the source pads 713,723, respectively, space can be saved.

Further, since the drain pad 722 for taking out the output from the drain to the outside is removed from the path from the drain of the subsequent-stage FET 702 to the output pad 127, the power supply voltage can be reduced without causing a voltage drop due to passing through the inductor 751. There is an advantage that a reduction in the level of the voltage applied to the drain electrode and input to the drain electrode can be suppressed as much as possible.

As shown in FIG. 8, the rear-stage FET 702 has a source electrode 7 on a gate electrode 725.
26, and a drain electrode 727 is further stacked thereon, but the gate electrode 725 and the source electrode 726 have the same leading direction. By drawing the gate electrode 725 to the source side in this manner, deterioration of characteristics due to an increase in gate-drain capacitance is avoided.

(Third Embodiment) Next, a two-stage power amplifier according to a third embodiment will be described.

FIG. 9 is an electric circuit diagram showing a configuration of the two-stage power amplifier according to the present embodiment. The gate bias setting FET is provided in the MMIC 110 according to the first embodiment shown in FIG.
911 is added, and further, a gate terminal 921, a source terminal 922, and a drain terminal 923 are provided, mounted on the mounting substrate 100, and the configuration of the gate bias circuit unit 902 formed is changed. here,
Elements and circuit portions denoted by the same reference numerals as those shown in FIG. 1 are the same as the above-described elements and circuit portions, and have the same configurations and functions.

The gate bias setting FET 902 in the present embodiment comprises a front-stage FET 112 and a rear-stage FET 11
4 is manufactured on the same chip under the same diffusion conditions as that of Example 4, and thus has the same variation as the variation of the idle current of the front-stage FET 112 and the rear-stage FET 114 due to the variation of the threshold value and the mutual conductance (gm). . The same applies to the temperature dependency. That is, the first-stage FE
If the idle current of T112 and the subsequent FET 114 is larger than the set target value, the gate bias setting FET 90
When the idle currents of the front-stage FET 112 and the rear-stage FET 114 are smaller than the set target value, the idle current of the gate bias setting FET 911 also becomes small. That is, using this correlation,
As will be described below, in addition to the effects described in the first embodiment, the first-stage FET 112
In addition, the variation in the idle current of the rear-stage FET 114 is suppressed.

FIG. 10 shows the configuration of the gate bias circuit unit 902 shown in FIG.
FIG. 9 is an electric circuit diagram showing a connection relationship with a gate bias setting FET 911 in C110. Gate terminal 921 and source terminal 92 of gate bias setting FET 911
2 is connected to the negative power supply Vgg, and the drain terminal 923 is grounded via the fixed resistor 1002 and the variable resistor 1001. Also, the first-stage FET gate voltage supply terminal 1
Reference numeral 23 is connected to the drain terminal 923 of the gate bias setting FET 911, and the latter-stage FET drain voltage supply terminal 124 is connected to a signal line between the fixed resistor 1002 and the variable resistor 1001. Here, the gate power supply Vgg is the first gate power supply according to claim 8, the gate bias setting FET 911 is a first resistance member (see claim 18), the ground is the second gate power supply, The variable resistor 1001 corresponds to a second resistance member.

With this configuration, the first-stage FET 1
When the idle currents of the FET 12 and the subsequent FET 114 are excessive, a large drain current of the FET 911 for setting the gate bias also flows, so that the voltage drop due to the fixed resistor 1002 and the variable resistor 1001 increases, and the gate voltages of the preceding FET 112 and the subsequent FET 114 increase. And the respective idle currents decrease. Therefore, variation in idle current can be suppressed. On the other hand, even when the idle current is too small, the idle current increases due to the reverse operation, so that variations in the idle current can be suppressed.

The effect of suppressing the variation of the idle current as described above is specifically described in the gate bias setting FET 9.
11 can be realized by appropriately setting the values of the drain current, the fixed resistor 1002, and the variable resistor 1001.

The first-stage FET 112 and the second-stage FET 11
In order to individually apply the gate voltages of
2, the fixed resistor 1002 may be omitted if the idle current is set at the same gate voltage. If the operation class is not changed, the variable resistor 1001 may be a fixed resistor.

The gate bias setting FET 9
11 and the front-stage FET gate voltage supply terminal 123 and the rear-stage F
The arrangement relationship with the ET gate voltage supply terminal 124 is shown in FIG.
It is not limited to the arrangement relationship shown in
The source / drain of the gate bias setting FET 911 is connected between the gate voltage supply terminal 124 and the second gate power supply unit (that is, the FET 911 is interposed), and the pre-stage FET voltage supply terminal 123 is connected via a variable resistor. It may be connected to the second gate power supply.

(Fourth Embodiment) Next, a fourth embodiment will be described with reference to FIG.

As shown in FIG. 11, the configuration of the MMIC 110 of the two-stage power amplifier according to the present embodiment is the same as the configuration of the MMIC 110 in the third embodiment. In the present embodiment, in the gate bias circuit section, the third
In addition to the same configuration as the embodiment, the gate bias setting FE
A fixed resistor 1101 is inserted in the source of T911.

Generally, there is an upper limit to the value of the current that can be passed to the negative power supply Vgg.
In the configuration of the gate bias circuit unit in the embodiment, there is a possibility that a current exceeding the upper limit value flows into the negative power supply Vgg.

However, in the configuration shown in FIG. 11 of the present embodiment, the source voltage of the gate bias setting FET 911 can be made higher than the gate voltage by utilizing the voltage drop by the fixed resistor 1101. Therefore, the drain current can be reduced, and the current flowing to the negative power supply Vgg can be reduced, thereby ensuring reliability.

In the basic configuration shown in FIG. 9, the gate terminal 921, source terminal 922 and drain terminal 923 of the gate bias setting FET 911 are
Since all of the gate voltage supply terminal 123 and the latter-stage FET gate voltage supply terminal 124 are formed on the mounting substrate 100 outside the MMIC 110, an arbitrary circuit can be configured by the gate bias circuit unit 902, It is possible to set the current value of the gate bias setting FET and the resistance value of each resistor while checking the operation of
The design margin of the MMIC is increased.

By the way, in mobile communication equipment, there are many cases where it is desired to reduce the number of components on a mounting board for miniaturization. In such a case, FIG. 12 and FIG.
3, the configuration of the fifth, sixth, and seventh embodiments shown in FIG.

(Fifth Embodiment) FIG. 12 is an electric circuit diagram showing a configuration of a part of an MMIC 110 and a gate bias circuit according to a fifth embodiment. In the present embodiment, the arranged members are the same as the circuit configuration shown in FIG. 10 of the fourth embodiment, except that the gate electrode and the source electrode of the gate bias setting FET 911 are connected inside the MMIC 110. With this configuration, the work for connecting them on the mounting board 100 becomes unnecessary, and the MM
Since the number of pads on the IC 110 is reduced by one, the MMIC
The chip size of the chip 110 can be reduced.

(Sixth Embodiment) FIG. 13 is an electric circuit diagram showing a configuration of a part of an MMIC 110 and a gate bias circuit section according to a sixth embodiment. In the present embodiment, FIG.
In the circuit shown in FIG. 2, the fixed resistor 1002 mounted on the mounting substrate 100 is integrated in the MMIC 110, and the front-stage FET gate voltage supply terminal and the rear-stage FET gate voltage supply terminal are integrated in the MMIC 110. This configuration eliminates the need for mounting and connecting them on the mounting board 100, and further reduces the number of pads on the MMIC 110 by two.
The number of locations can be reduced.

(Seventh Embodiment) FIG. 14 is an electric circuit diagram showing a configuration of a part of an MMIC 110 and a gate bias circuit section according to a seventh embodiment. In the present embodiment, FIG.
In the circuit shown in FIG. 1, the fixed resistors 1002 and 1101 mounted on the mounting substrate 100 are integrated on the MMIC, and the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal are integrated in the MMIC. With this configuration, it is not necessary to mount and connect them on the mounting board, and the number of pads on the MMIC can be reduced by three as compared with the configuration of FIG.

The variable resistor 1001 needs to be mounted on the mounting substrate 100 in order to change the operation class of the FET. For example, in the fourth to seventh embodiments, the variable resistor 1001 has an Since there is an effect of suppressing the current fluctuation, if the operation class is not changed, it may be formed of a fixed resistor and mounted on the mounting substrate 100 or integrated in the MMIC 110.

(Eighth Embodiment) FIG. 15 is an electric circuit diagram showing a configuration of a two-stage power amplifier according to an eighth embodiment.
In the present embodiment, the gate bias circuit unit is configured as the MMIC 11
It is accumulated in 0. That is, since it is assumed that the operation class is not changed, no variable resistor is provided. The two fixed resistors 12 are connected between the drain of the gate bias setting FET 911 and the ground terminal 125.
01, 1202 and each fixed resistor 1201,
It has a configuration in which a subsequent-stage FET gate voltage supply terminal is connected to a signal line between 1202.

In the present embodiment, the gate bias circuit section has a standard specification and is incorporated in the MMIC 110, and the drain bias circuit section 101 has a configuration that can be changed as in the first embodiment, so that the minimum required Only the part needs to be mounted on the mounting board 100, and there is an advantage that a simple configuration is sufficient.

(Ninth Embodiment) FIG. 16 is an electric circuit diagram showing a configuration of a two-stage power amplifier according to a ninth embodiment.
In the present embodiment, the gate bias circuit section is integrated in the MMIC 110 as in the eighth embodiment, and a fixed resistor is connected to the source of the gate bias setting FET 911 as in the configuration shown in FIG. 11 of the fourth embodiment. Vessel 110
1 is inserted. Therefore, in the present embodiment, there is an advantage that variations in idle current can be more reliably suppressed with a simple configuration.

In the third to ninth embodiments, the chip size is 1 mm × 2 mm. The gate widths of the date bias setting FETs are two types, 50 μm and 5 μm.

[0111]

According to the first power amplifier of the present invention, in the power amplifier, since the impedance adjusting member serving as the drain bias circuit is formed on the mounting substrate, the operation frequency can be changed on the mounting substrate and the drain can be changed. It is possible to suppress the deterioration of the saturation output characteristic, the gain, and the efficiency by reducing the parasitic resistance of the bias circuit, and to reduce the cost of the high-frequency power amplifier.

According to the second to fifth power amplifiers of the present invention, the gate bias of the amplifying FET in the power amplifier is applied by dividing the power supply voltage by resistance, and the variable resistor or the resistor mounted on the mounting substrate is further applied. The operation bias point of the FET is changed by changing the resistance value of the resistor to the mounting part of the device, so the operation class is changed and the yield of integrated circuits is improved by suppressing the fluctuation of the operation bias point and input / output impedance. And an increase in design margin.

According to the sixth power amplifier of the present invention, the fluctuation of the idle current of the amplifying FET can be automatically adjusted via the FET, the resistor, and the negative power supply. Variations in characteristics due to variations can be reduced as much as possible, and characteristics can be stabilized.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a configuration of a power amplifier according to a first embodiment.

FIG. 2 is an electric circuit diagram of a drain bias circuit unit according to the first embodiment.

FIG. 3 is an electric circuit diagram of a gate bias circuit unit according to the first embodiment. .

FIG. 4 is a frequency characteristic diagram showing operating frequency variability in the first embodiment.

FIG. 5 is a characteristic distribution diagram showing yield improvement in the first embodiment.

FIG. 6 is an electric circuit diagram of an input matching circuit unit, an interstage matching circuit unit, and an output matching circuit unit according to the first embodiment.

FIG. 7 is a plan view of an MMIC according to a second embodiment.

FIG. 8 illustrates an ME included in the MMIC according to the second embodiment.
It is a top view of SFET.

FIG. 9 is a block diagram illustrating a configuration of a power amplifier according to a third embodiment.

FIG. 10 is an electric circuit diagram of a gate bias circuit unit according to a third embodiment.

FIG. 11 is an electric circuit diagram of a gate bias circuit section according to a fourth embodiment.

FIG. 12 is an electric circuit diagram of a gate bias circuit section according to a fifth embodiment.

FIG. 13 is an electric circuit diagram of a gate bias circuit section according to a sixth embodiment.

FIG. 14 is an electric circuit diagram of a gate bias circuit section according to a seventh embodiment.

FIG. 15 is a block diagram illustrating a configuration of a power amplifier according to an eighth embodiment.

FIG. 16 is a block diagram illustrating a configuration of a power amplifier according to a ninth embodiment.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Mounting substrate 101 Drain bias circuit section 102 Gate bias circuit section 110 MMIC 111 Input matching circuit section 112 Pre-stage FET 113 Interstage matching circuit section 114 Post-stage FET 115 Output matching circuit section 116 Gate bias resistor 117 Gate bias resistor 121 Front-stage FET Drain voltage supply terminal 122 Second stage FET drain voltage supply terminal 123 First stage FET gate voltage supply terminal 124 Second stage FET gate voltage supply terminal 125 Ground terminal 126 Signal input terminal 127 Signal output terminal

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H03F 3/213 H04B 1/04 (72) Inventor Osamu Ishikawa 1006 Ojidoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (23)

[Claims] 1. A power amplifier comprising: an integrated circuit in which an active element and a passive element are integrally formed; and a substrate for mounting the integrated circuit, wherein a gate electrode and a drain electrode provided in the integrated circuit are provided. At least one amplifying FET comprising a source electrode and an amplifying high-frequency signal; a drain voltage supply terminal provided in the integrated circuit for supplying a voltage to a drain electrode of the amplifying FET; A drain power supply unit provided on an external substrate and connected to the drain voltage supply terminal; and the amplifying FE provided on a substrate outside the integrated circuit unit.
An impedance adjustment member for adjusting the impedance on the drain power supply side as viewed from the drain electrode of T; wherein the impedance adjustment member is provided on a substrate outside the integrated circuit; A transmission line connected between the drain power supply unit and transmitting a high-frequency signal; and a transmission line provided on a substrate outside the integrated circuit and capable of mounting a capacitor between the ground of the substrate and the transmission line and a mounting portion. And a capacitor mounting portion configured to be changeable, wherein an operating frequency can be changed by changing a mounting portion of the capacitor. 2. The power amplifier according to claim 1, wherein a capacitor is mounted on the capacitor mounting portion. 3. A power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate for mounting the integrated circuit, wherein a gate electrode and a drain electrode provided in the integrated circuit are provided. At least one amplifying FET comprising a source electrode and an amplifying high-frequency signal; a drain voltage supply terminal provided in the integrated circuit for supplying a voltage to a drain electrode of the amplifying FET; A drain power supply unit provided on an external substrate and connected to the drain voltage supply terminal; and the amplifying FE provided on a substrate outside the integrated circuit unit.
An impedance adjusting member for adjusting the impedance on the drain power supply side as viewed from the drain electrode of T; and a capacitor interposed between the drain voltage supply terminal and the ground of the substrate on the substrate outside the integrated circuit. The impedance adjusting member is provided between the drain voltage supply terminal and the drain power supply unit on a substrate outside the integrated circuit, and both ends are respectively provided for the drain voltage supply terminal and the drain power supply unit. A power amplifier comprising an inductor mounting portion for mounting an inductor to be connected, wherein an operating frequency can be changed by changing an inductance value of the inductor. 4. The power amplifier according to claim 3, wherein an inductor is mounted on the inductor mounting portion. 5. The power amplifier according to claim 1, wherein a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplification FET, First and second gate power supplies provided on a substrate outside the integrated circuit; and first and second gate power supplies interposed between the gate voltage supply terminal and the first and second gate power supplies, respectively. A resistance member, wherein at least the second resistance member of the two resistance members is a variable resistor provided on a substrate outside the integrated circuit, and the amplification is performed by changing a resistance value of the variable resistor. For F
A power amplifier characterized in that an operation bias point of ET can be changed. 6. The power amplifier according to claim 5, wherein said amplification FET comprises a front-stage FET and a rear-stage FET, said power amplifier functions as a two-stage power amplifier, and said gate voltage supply terminal is a front-stage FET gate. A first-stage gate power supply unit connected to the first-stage FET gate voltage supply terminal; a first-stage gate power supply unit connected to the first-stage FET gate voltage supply terminal;
The second gate power supply section is a second-stage FET gate power supply section connected to the second-stage FET gate voltage supply terminal, and the second resistance member, which is the variable resistor, is connected to the second-stage FET gate voltage supply terminal.
Between the gate voltage supply terminal and the front-stage FET gate power supply unit, and between the rear-stage FET gate voltage supply terminal and the rear-stage F
The first resistance member is provided between the first-stage FET gate voltage supply terminal and the first-stage FET gate power supply unit and the second-stage FET gate voltage. A power amplifier comprising a fixed resistor interposed between the supply terminal and the second-stage FET gate power supply unit. 7. The power amplifier according to claim 6, wherein said first-stage FET gate voltage supply terminal and said second-stage FET gate voltage supply terminal are connected via a third resistance member. 8. The power amplifier according to claim 5, wherein a fixed resistor is provided between a gate electrode of the amplification FET and the gate voltage supply terminal. A power amplifier. 9. A power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate for mounting the integrated circuit, wherein a gate electrode and a drain electrode provided in the integrated circuit are provided. At least one amplifying FET comprising a source electrode and an amplifying high-frequency signal; a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET; First and second gate power supplies provided on an outer substrate; first and second resistance members interposed between the gate voltage supply terminal and the first and second gate power supplies, respectively; At least the second resistor member of the two resistor members is a variable resistor provided on a substrate outside the integrated circuit, and the variable resistor is configured to change the resistance value of the variable resistor.
A power amplifier, wherein a fixed resistor is interposed between the gate electrode of the amplifying FET and the gate voltage supply terminal. . 10. The power amplifier according to claim 1, wherein a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET, First and second gate power supplies provided on a substrate outside the integrated circuit; and first and second gate power supplies interposed between the gate voltage supply terminal and the first and second gate power supplies, respectively. A resistance member, wherein at least the second resistance member of the two resistance members is provided between the gate voltage supply terminal and the second gate power supply unit on a substrate outside the integrated circuit. A power amplifier, comprising: a fixed resistor attached to an attachment portion, wherein an operating bias point of the amplifying FET can be changed by changing a resistance value of the fixed resistor. 11. The power amplifier according to claim 10, wherein said amplification FET comprises a front-stage FET and a rear-stage FET, said power amplifier functions as a two-stage power amplifier, and said gate voltage supply terminal is a front-stage FET gate. A first-stage gate power supply unit connected to the first-stage FET gate voltage supply terminal; a first-stage gate power supply unit connected to the first-stage FET gate voltage supply terminal;
The second gate power supply section is a second-stage FET gate power supply section connected to the second-stage FET gate voltage supply terminal. The first resistance member is provided between the first-stage FET gate voltage supply terminal and the second-stage FET gate power supply unit and the second-stage FET gate power supply unit. A fixed resistor interposed between the power supply terminal and the front-stage FET gate power supply and between the rear-stage FET gate voltage supply terminal and the rear-stage FET gate power supply. amplifier. 12. The power amplifier according to claim 11, wherein the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal are connected via a third resistance member. 13. The power amplifier according to claim 10, further comprising a fixed resistor interposed between the gate electrode of the amplifying FET and the gate voltage supply terminal. A power amplifier characterized in that: 14. The power amplifier according to claim 10, wherein the first resistance member is provided in the integrated circuit, a gate electrode and a drain electrode are connected to each other, and A power amplifier, wherein the drain electrode is an adjustment FET connected to the gate electrode of the amplification FET. 15. A power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate for mounting the integrated circuit, wherein a gate electrode, a drain electrode and a At least one amplifying FET composed of a source electrode for amplifying a high-frequency signal; a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET; First and second gate power supplies provided on a substrate of the first and second gate power supplies; first and second resistance members interposed between the gate voltage supply terminal and the first and second gate power supplies, respectively; A fixed resistor interposed between the gate electrode of the amplification FET and the gate voltage supply terminal; at least the second resistance member of the two resistance members is connected to the integrated circuit; A fixed resistor attached to a resistor attachment portion provided between the gate voltage supply terminal and the second gate power supply portion on a substrate outside the road, wherein the resistance value of the fixed resistor is changed. A power amplifier characterized in that an operation bias point of an amplification FET can be changed. 16. The power amplifier according to claim 15, wherein the first resistance member is provided in the integrated circuit, a gate electrode and a drain electrode are connected to each other, and the drain electrode is a gate of the amplification FET. A power amplifier, which is an adjustment FET connected to an electrode. 17. A power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate for mounting the integrated circuit, wherein a gate electrode, a drain electrode, and At least one amplifying FET composed of a source electrode for amplifying a high-frequency signal; a gate voltage supply terminal provided in the integrated circuit for supplying a voltage to a gate electrode of the amplifying FET; A first and a second gate power supply provided on the substrate, and a first and a second resistance member interposed between the gate voltage supply terminal and the first and the second gate power supply, respectively. At least the second resistance member of the two resistance members is provided on a substrate outside the integrated circuit between a gate voltage supply terminal and the second gate power supply unit. A fixed resistor attached to the unit, wherein the operating bias point of the amplifying FET can be changed by changing a resistance value of the fixed resistor; and the first resistance member is provided in the integrated circuit. Wherein the gate electrode and the drain electrode are connected to each other and the drain electrode is connected to the gate electrode of the amplifying FET. 18. A power amplifier comprising an integrated circuit in which an active element and a passive element are integrally formed, and a substrate for mounting the integrated circuit, wherein a gate electrode and a drain electrode provided in the integrated circuit are provided. An amplifying FET comprising: a source electrode and an amplifying FET for amplifying at least one high-frequency signal; a gate electrode and a drain electrode provided in the integrated circuit; a gate electrode and a drain electrode connected to each other;
An adjusting FET connected to the gate electrode of the ET; and an amplifying and adjusting FET provided in the integrated circuit.
First and second gate voltage supply terminals for supplying voltages to the respective gate electrodes, and provided on a substrate outside the integrated circuit, and connected to the first voltage supply terminal via the adjustment FET. A first gate power supply unit, a second gate power supply unit provided on a substrate outside the integrated circuit and connected to the second voltage supply terminal, and an amplification FET provided on a substrate outside the integrated circuit and
And a resistor interposed in a path extending from the connection between the gate electrode of the adjusting FET and the drain electrode of the adjustment FET to the second gate power supply. 19. The power amplifier according to claim 1, wherein a gate electrode and a drain electrode are provided in the integrated circuit, and a gate electrode and a drain electrode are connected to each other.
An adjustment FET connected to the gate electrode of the ET; and first and second gate voltage supply terminals provided in the integrated circuit for supplying voltages to the gate electrodes of the amplification FET and the adjustment FET, respectively. A first gate power supply unit provided on a substrate outside the integrated circuit and connected to the first voltage supply terminal via the adjustment FET; a first gate power supply unit provided on a substrate outside the integrated circuit; A second gate power supply connected to a two-voltage supply terminal; and an amplifying FET provided on a substrate outside the integrated circuit.
And a resistor interposed in a path extending from the connection between the gate electrode of the adjusting FET and the drain electrode of the adjustment FET to the second gate power supply. 20. The power amplifier according to claim 18, wherein the amplifying FET includes a front-stage FET and a rear-stage FET, the power amplifier functions as a two-stage power amplifier, and the first gate voltage supply terminal. Is composed of a first-stage FET gate voltage supply terminal and a second-stage FET gate voltage supply terminal, and one of the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal is the adjustment FET.
And the other of the first-stage FET gate voltage supply terminal and the second-stage FET gate voltage supply terminal is connected to the second gate power supply unit via the resistor. A power amplifier, characterized in that: 21. The power amplifier according to claim 18, wherein a resistor interposed between the first gate voltage supply terminal and the second power supply is a variable resistor. Yes, the amplifying FET by changing the resistance value of the variable resistor
A power amplifier characterized in that the operation bias point can be changed. 22. The power amplifier according to claim 18, wherein a fixed resistor is interposed between the gate electrode of the amplifying FET and a first gate voltage supply terminal. . 23. The power amplifier according to claim 20, wherein: between the gate electrode of the pre-stage FET and the gate voltage supply terminal of the pre-stage FET, and between the gate electrode of the post-stage FET and the gate voltage supply terminal of the post-stage FET. A power amplifier, wherein a resistor is interposed in each of the power amplifiers.