JPH11274506A - Method for manufacturing semiconductor luminous element, semiconductor luminous element and display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor luminous element using a porous silicon instead of anodic oxidization. SOLUTION: A fluid 100 in which a silicon compound 101 is molten in a solvent is applied on a substrate, and energy is applied to the fluid 100 and coupling in the silicon compound is changed, to convert into a particle lump 101 of amorphous silicon, and energy is applied on the particle lump 101 of the amorphous silicon for a constant period of time to crystallize it to form a luminous layer of porous silicon.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a method for manufacturing a semiconductor light emitting device using porous silicon.

[0002]

2. Description of the Related Art In 1990, a ham from the British National Defense Institute, Porous Silicon (porus) formed on a silicon surface.
silicon or poly-crystalline si
(Licon) has been reported to exhibit room-temperature photoluminescence in the visible wavelength region, and studies on semiconductor light emitting devices using porous silicon have been made. Kanham reports that Ap
pl. Phys. Lett. 57, 1046 (1990). According to the literature on semiconductor light emitting devices by Reuben Collins, et al., "Emitting Porous Silicon" Parity Vol. 12, No. 09, 1997-09, pp18-27, an effective method for forming a porous silicon film is described. As a method, a method of forming a network structure of silicon by electrochemically anodizing the surface of a silicon wafer has been regarded as an effective method so far.

[0003]

However, the production of porous silicon by anodization has some disadvantages. According to the above literature, the emission wavelength of a semiconductor light emitting device using porous silicon is said to be correlated with the diameter of silicon crystal grains, but it is difficult to control the diameter of silicon crystal grains in anodization. . Also, even if the grain size of the silicon crystal could be adjusted by anodization,
When a plurality of light-emitting colors are required for a color light-emitting element, a mask must be formed for each light-emitting color and anodized, which is a complicated and difficult process for manufacturing a light-emitting element for color display. It is expected that management will be required.

In addition, the method of anodizing the surface of a silicon single crystal cannot form porous silicon in a very large area. In recent years, where demand for large-sized display panels and the like is increasing, where large-sized light-emitting elements are required, applications of light-emitting elements using porous silicon are limited. In order to increase the size of the semiconductor light emitting device, it is necessary to increase the diameter of the silicon wafer, so that it is considered impossible to manufacture a profitable light emitting device.

By the way, according to the ink jet system, which is a technique which the present inventor is skilled in, the fluid containing silicon can be applied to an arbitrary position and in an arbitrary amount. In addition, prior research (“Japanese Journal o
f Applied Physics ”, Vol. 30, No. 12B, 12-1991, pp
3733-3740, “Japanese Journal of Applied Physic
s ”, Vol. 34 (1995), pp921-926, Part 1, No. 2B, 2-1
995) shows that silicon can be made porous by vapor deposition under low pressure.

Therefore, the present inventor aims to provide a new method for producing porous silicon in place of the conventionally used anodic oxidation, so that the present inventors are skilled in the art of the ink jet method and other vacuum deposition. It is proposed to produce porous silicon in a manner.

[0007]

That is, a first object of the present invention is to provide a method for manufacturing a semiconductor light emitting device in which porous silicon is formed from a solution of a silicon compound. Another object is to manufacture a semiconductor light emitting device easily and economically. A second object of the present invention is to provide a method for manufacturing a semiconductor light emitting device in which porous silicon is formed by a vapor deposition method, whereby a semiconductor light emitting device can be easily and economically manufactured even for a large light emitting device. That is. A third object of the present invention is to provide a bright and large-sized display device at a low cost by providing a display device provided with a semiconductor light-emitting element manufactured by a new manufacturing method. The invention for solving the first problem is a method for manufacturing a semiconductor light emitting device including a light emitting layer composed of porous silicon, and includes the following steps. a) a step of applying a fluid in which a silicon compound is dissolved in a solvent to a substrate;

[0008] b) a step of applying energy to the applied fluid to form bonds in the silicon compound to produce amorphous silicon particles.

C) a step of applying energy for a certain period of time to crystal grains of amorphous silicon to crystallize, thereby forming the light emitting layer of porous silicon.

[0010] Here, "fluid" refers to a medium having a viscosity such that it can be applied. It does not matter whether the solvent or the like is composed of a molecule having a polar group like water or a molecule having no polar group. It is sufficient to have a certain fluidity (viscosity), and the compound may be dissolved or fine particles may be mixed. Fluidity can be measured, for example, by the contact angle of the fluid. As a method of applying the fluid, various kinds of coding methods such as a roll coating method, a die coating method, a spin coating method, a spray coating method, and a printing method can be applied. “Porous silicon” is silicon in which silicon crystal grains having a diameter on the order of nanometers are formed in contact with each other at grain boundaries.

According to the present invention, the emission wavelength of the light emitting layer can be adjusted by adjusting the concentration of the silicon compound dissolved in the solvent. This is because the diameter of the agglomerate of the amorphous silicon precipitated changes in proportion to the concentration, and the diameter of the crystal grain of the porous silicon correlates with the diameter of the agglomerate of the amorphous silicon. The emission wavelength of a semiconductor light emitting device correlates with the crystal diameter of porous silicon.

For example, in the step of applying a fluid to a substrate,
It is preferable to discharge an appropriate amount of the fluid by an inkjet method. The above-mentioned document describes that oxidized silicon deteriorates luminous efficiency. According to the ink jet method, the coating can be performed while suppressing the mixed amount of oxygen to be low. Further, according to the ink jet method, a fluid is attached to a wide area with an arbitrary thickness using inexpensive equipment. As the ink jet method, even if it is a piezo jet method that discharges a fluid by changing the volume of the piezoelectric element,
A method in which a fluid is discharged by sudden generation of steam by application of heat may be used.

The silicon compound is not particularly limited as long as it contains silicon atoms, but is preferably one that can be easily applied and deposited. For example, an alkylsilane compound or a phenylsilane compound is used as a silicon compound. Specifically, the alkylsilane compound or the phenylsilane compound is any of trimethylmonosilane, trimethyltrisilane, phenylmonosilane, and polysilane. The solvent for dissolving the silicon compound may be any solvent that can dissolve the silicon compound or the like at a constant viscosity and is chemically and physically stable that does not act on the silicon compound. An example is pentane (C ₅ H ₁₂ ). As an example, the fluid is phenylmonosilane as a silicon compound and pentane (C
_A solution obtained by dissolving approximately the same amount in ₅ H ₁₂ ) is a stable fluid that does not generate heat or the like, and is preferable.

In the step of forming amorphous silicon, any energy may be used as long as the energy can break the bond of a silicon compound and precipitate a single silicon particle, such as an excimer lamp having a specific wavelength. Irradiate with light for several minutes.

Another aspect of the present invention for solving the above first problem is a method for manufacturing a semiconductor light emitting device having a light emitting layer made of porous silicon, comprising the following steps.

A) a step of applying a fluid in which silicon crystal grains having a fixed diameter are dissolved in a solvent to a substrate;

B) applying energy to the silicon crystal grains for a certain period of time to form the light emitting layer of porous silicon;

In the present invention, the emission wavelength of the light emitting layer is adjusted by adjusting the diameter of the silicon particles dissolved in the solvent. This is because the crystal grows and polycrystallizes with the silicon particles as nuclei, so that the silicon particles contained in the fluid and the particle size of the porous silicon are correlated. Here, the solvent for dissolving the silicon particles only needs to have a viscosity that can be applied and be chemically and physically stable that does not affect silicon. An example is ethoxyethanol.

The invention for solving the second problem is a method for manufacturing a semiconductor light emitting device having a light emitting layer composed of porous silicon, and comprises the following steps.

A) A step of forming a silicon layer by a chemical vapor deposition method under a constant condition using a silicon compound as an introduction gas under a low pressure atmosphere.

B) a step of implanting hydrogen ions into the silicon layer;

C) a step of applying energy to the silicon layer into which hydrogen ions have been implanted for a certain period of time to form the porous silicon light-emitting layer.

Here, the step of forming the silicon layer includes:
400 ° C to 700 ° C using low pressure chemical vapor deposition
The silicon layer is formed under an atmosphere having a pressure of 0.01 to 40 mTorr. This is because porous silicon is generated under the above conditions. In the step of forming the silicon layer, for example, a silane gas such as SiH ₄ is used as an introduction gas. In the step of forming the silicon layer, the emission wavelength of the light emitting layer is adjusted by changing the partial pressure or the flow rate of the introduced gas to change the diameter of the particles forming the silicon layer. As described in the above-mentioned literature, the diameter of a single silicon agglomerate changes depending on the partial pressure of the introduced gas, and the agglomerate grows and polycrystallizes, so that the partial pressure of the gas increases the emission wavelength of the porous silicon. Is determined.

In the step of forming a light emitting layer, the porous silicon is formed by applying any one of light, heat and an electron beam as the energy. Crystallization of the silicon is promoted by the energy application, and the silicon becomes porous silicon in which the agglomerates are in close contact with each other.

According to the present invention, after a step of manufacturing a driving substrate for driving the light emitting layer, a light emitting layer is formed on the driving substrate by the above method, and then an upper electrode is formed on the light emitting layer. This is a method applied when the drive substrate is not affected by heat or the like when the light emitting layer of the present invention is manufactured.

The present invention further comprises a step of forming a driving substrate for driving the light emitting layer on the substrate, a step of peeling the driving substrate from the substrate, and a light emitting layer formed by the above method. And the separated drive substrate are bonded so as to be electrically contacted. A semiconductor light emitting device can be manufactured without damaging the driving substrate due to heat generated when manufacturing the light emitting layer of the present invention. Preferably, in the step of forming the drive substrate, a release layer made of a material that causes ablation by irradiation of a fixed energy is provided on the substrate, and then the drive substrate is formed. The driving substrate is separated from the layer. The substrate can be easily separated by the separation layer.

A third object of the present invention is to provide a semiconductor light emitting device formed by the above method for manufacturing a semiconductor light emitting device, and a modulator provided so as to modulate light from the semiconductor light emitting device. A display device. The modulation device may be configured to be able to block or transmit light from the semiconductor light emitting device in units of pixels in correspondence with pixel information. For example, a transmission type liquid crystal display device is applicable.

[0028]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) In Embodiment 1 of the present invention, a layer structure of a semiconductor light emitting device is formed on a drive circuit of the semiconductor light emitting device by the manufacturing method of the present invention. 1 and 2 are cross-sectional views illustrating a manufacturing process of the semiconductor light emitting device according to the present embodiment. The method for manufacturing a semiconductor light emitting device according to the present embodiment includes:
Drive substrate forming step, bank forming step, fluid applying step,
The method includes a first heating step, an irradiation step, a second heating step, a light emitting layer forming step, and an upper electrode forming step. The description will be made in the following order. The structure of the driving substrate and the layer structure sandwiching the light emitting layer shown in the following cross-sectional views are merely examples, and can be variously changed. In the figure, the thin film transistor is shown extremely large as compared with the pixel region for easy understanding of the layer structure.

Driving Substrate Forming Step (FIG. 1A): The driving substrate forming step is a step of forming a driving substrate for supplying electric power for driving the light emitting layer of the present invention. As the circuit structure of the drive circuit and the layer structure of the drive substrate, various known structures can be applied. Here, a general thin film transistor is exemplified. The thin film transistor is suitable for driving a flat type device such as the semiconductor light emitting device of the present invention.

The thin film transistor 300 is formed by a vacuum evaporation method,
It is manufactured by repeating thin film formation by a sputtering method, a CVD method, a plasma CVD method, an ion plating method, a PVD method or the like, and patterning by a reverse etching method, a photo etching method, a mask method, a lithography method or the like. For example, a method is repeated in which a semiconductor film or an insulating film is deposited by a vacuum deposition apparatus, and a resist is applied on the thin film by lithography, exposure / development is performed, and an unnecessary thin film is removed by an etching apparatus to obtain a pattern. . By repeating the above steps, the thin film transistor 300 forms the gate 301 and the insulating film 30 on the substrate 200.
2, semiconductor film 303, source 304, drain 305,
An insulating film 306 is formed. Substrate 200
A pixel electrode 201 is formed in an upper pixel region (a region where light is transmitted in a display device).

The substrate 200 is made of glass, quartz, resin, or the like, and has a constant light transmittance and a stable material that can physically endure such as stress and heat. The pixel electrode 201 has light transmittance and conductivity, and for example, mesa or ITO is applied. It is assumed that the thin film transistor 300 and the pixel electrode 201 have a resistance that is not adversely affected by the step of forming the light emitting layer 103 of the present invention.

Bank forming step (FIG. 1B): The bank forming step is a step of forming a bank on a driving substrate. A bank is a partition member that partitions a pixel area. The bank is configured so that each color pixel (red, green, blue, etc.) in the color light emitting element can be divided. A light emitting layer that emits light in any of the primary colors is provided in a pixel region surrounded by the banks. The bank 202 is formed of, for example, polyimide or an insulating organic material. The height of the bank 202 is set so as to fill the fluid 100 containing a silicon compound sufficient to form a semiconductor light emitting device. By adjusting the bank 202 to be incompatible with the fluid, FIG.
As shown in (c), the fluid 100 can be filled beyond the height of the bank. The bank 202 is formed by applying a material by various coating methods and patterning by a lithography method or the like, or by directly forming by a printing method.

Fluid application step (FIG. 1C): The fluid application step is a step of applying a fluid containing a silicon compound to a substrate. The fluid 100 is formed by dissolving a solute containing a silicon compound in a solvent. Any silicon compound may be used as long as it contains silicon atoms. For example, an alkylsilane compound or a phenylsilane compound is used as a silicon compound. Specifically, the alkylsilane compound or the phenylsilane compound includes trimethylmonosilane (formula 1), trimethyltrisilane (formula 2),
Phenylmonosilane (Chemical Formula 3) or Polysilane (Chemical Formula 4:
R1 and R2 can be any alkyl groups).

[0034]

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[0035]

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[0036]

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[0037]

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This is because these compounds are stable at room temperature and can deposit amorphous silicon by applying energy such as laser irradiation. The solvent may be any solvent that is capable of dissolving a silicon compound or the like with a certain viscosity and is chemically and physically stable that does not act on the silicon compound. For example, pentane (C ₅
H ₁₂ ). The solvent is used to adjust the fluid properties such as viscosity and surface tension while preventing combustion of flammable and flammable silanes. In order to prevent ignition, the preparation of the solution is preferably performed, for example, under a nitrogen atmosphere. Fluids produced by dissolving phenylmonosilane in substantially equal amounts in pentane are preferable because they do not generate heat and are stable.

As a method for applying the fluid, various types of coding methods such as a roll coating method, a die coating method, a spin coating method, a spray coating method, a printing method, and the like can be applied. Here, an ink jet method is used. This is because, according to the inkjet method, the amount of mixed oxygen can be kept low, and the luminous efficiency of the manufactured porous silicon is not impaired. The ink jet method includes a so-called piezo jet method of an on-demand method in which a fluid is discharged by a piezoelectric material, and a method of discharging by a bubble formed by heating a heating element. The former is preferable. This is because heat does not affect the silicon compound and the like.

Specifically, the ink jet recording head 1
Is moved to the pixel area, and the fluid 1 containing the silicon compound is moved.
00 is ejected. Here, fluids in which the concentration of the silicon compound is changed are prepared in the number of primary colors. The concentration of the silicon compound in the fluid discharged for each primary color is changed. The higher the concentration of the silicon compound, the larger the diameter of the amorphous silicon particles generated by the subsequent laser irradiation. The larger the diameter of the amorphous silicon particles, the larger the diameter of silicon crystal grains. The diameter of the silicon crystal grain has a correlation with the wavelength of emitted light. Therefore, the fluid 10 having a high silicon compound concentration is formed in the light emitting layer that emits red light having a long wavelength.
The fluid 100b having a low silicon compound concentration is discharged to the light emitting layer that discharges 0r and emits blue light having a short wavelength. 100 g of a fluid having a silicon compound concentration therebetween is discharged to the light emitting layer that emits green light. The discharge amount of the fluid 100 is
Depends on silicon compound concentration. A fluid containing a silicon compound in an amount capable of forming a light emitting layer with a thickness necessary to obtain light of a constant intensity is discharged.

Instead of including silicon as a compound in the fluid as described above, a fluid in which silicon fine particles are dispersed in a solvent may be used. At this time, the diameter of the fine particles is changed according to the emission color. This is because, when crystallizing silicon in the light emitting layer forming step, crystal grains having a size corresponding to the diameter of the fine particles are obtained. Silicon microparticles need to be nanometer-scale microparticles.
When silicon fine particles are used, it is not necessary to generate silicon grain boundaries by the irradiation step.

First heating step (FIG. 1 (d)): The first heating step is a step performed when the fluid 100 is still discharged onto the substrate and the fluid is too high to deposit amorphous silicon easily. is there. This step is unnecessary when the solvent in the fluid 100 evaporates easily. For example, heating is performed using an electric furnace at a constant temperature (eg, 300 ° C.) for a predetermined time (eg, 30 minutes). In this step, the solvent component evaporates. When different fluids 100 whose silicon compound concentration is adjusted are filled for each pixel, it is necessary to adjust the amount of solvent evaporation to be uniform for each pixel. Conversely, even if the fluid is filled with the same silicon compound concentration in all the pixel regions, if the amount of solvent evaporation is controlled in each pixel region in this heating step, the flow of the silicon compound concentration different in each pixel region can be achieved. This is equivalent to filling the body 100.

Irradiation step (FIG. 2A):
This is a step in which high energy is supplied to the fluid 100 filled in the pixel region to break the bond of the silicon compound and deposit silicon in a single amorphous state. As the energy to be applied, a light beam having a uniform wavelength is preferable. For example, a light beam having a wavelength of 172 nm is supplied by an Xe-Xe excimer lamp for about one minute. By such light irradiation, the bond between the alkyl group of the silicon compound and silicon is broken. The silicon atoms whose alkyl chains have been broken are aggregated with the surrounding silicon atoms to form the amorphous silicon particles 101, but the diameter of the particles differs depending on the concentration of the silicon compound. In other words, a fluid having a higher silicon compound concentration becomes a larger particle mass 101. The particle mass 101r of the light-emitting layer that emits red is the largest, and the particle mass 101b of the light-emitting layer that emits blue is the smallest. The particle mass 101g of the light emitting layer that emits green light has an intermediate size. In this state, the solvent 102 and the silicon lump 101 are mixed.

Second heating step (FIG. 2 (b)): The second heating step is a step of heating to evaporate the solvent from the fluid in which the silicon agglomerates are scattered. However, if silicon crystallization is possible even if the solvent remains,
This step is unnecessary. For example, heating is performed using an electric furnace at a constant temperature (eg, 300 ° C.) for a predetermined time (eg, 30 minutes).
In this step, the solvent component evaporates.

Light-Emitting Layer Forming Step (FIG. 2C): The light-emitting layer forming step is a step of forming a light-emitting layer of porous silicon by annealing and crystallizing amorphous silicon agglomerates. When silicon in an amorphous state is heated under a certain condition, silicon in each grain is crystallized. Then, with the loss of the solvent, the agglomerates adhere to each other at the grain boundaries, and as a whole, a single layer of porous silicon light emitting layer 103 is formed.
Is formed. The larger the silicon lump 101, the larger the diameter of the porous silicon crystal grains.

Various annealing methods such as laser annealing for irradiating laser light, lamp annealing for irradiating light from a lamp, furnace annealing for heating in a furnace, and electron beam annealing for irradiating an electron beam to generate heat are used. Is applicable. In laser annealing, an Ar ion laser is continuously oscillated to scan at a constant speed (10 m / s or the like). Excimer lasers (XeCl, KrF, ArF, etc.), YAG lasers, and ruby lasers have a constant energy (100
~200mJ / cm ^2, etc.) with a constant pulse width (several tens ns
Pulse oscillation. Lamp annealing is performed at a constant temperature (800 ° C. or the like) with an excimer lamp or the like for a short time (1 second).
Etc.) Furnace annealing at a certain temperature (600 ° C
, Etc.) for a long time (10 hours, etc.).

The light-emitting layer 10 made of porous silicon in which nanometer-sized crystal grains are in contact at the grain boundaries by the above annealing
3 is formed. Even when the crystal grains are in contact with each other, the solvent 102 evaporates, so that the light-emitting layer 103 includes many voids. Due to the presence of the voids, the porosity (the ratio of the void volume to the total volume) of the light emitting layer becomes 50% to 90%. It has been reported that the higher the porosity, the more efficient the light emission.

Upper electrode forming step (FIG. 2D): The upper electrode forming step is a step of providing a common electrode and a protective layer on the light emitting layer 10 manufactured in the above steps. Light emitting layer 103
The common electrode 203 is formed by sputtering or vacuum evaporation. When light is irradiated in the upper direction of the figure, the common electrode is formed of transparent ITO or the like. In order to further protect the light emitting surface and secure mechanical strength, the protective layer 20
4 is provided. When glass or quartz is used as the protective layer, the common electrode and the protective layer are bonded. When a resin is used as the protective layer, the resin is applied on the common electrode 203. Through the above steps, the semiconductor light emitting device of the present invention is completed.

(Operation) In the semiconductor light emitting device, a constant potential is applied to the common electrode
When a control signal is given to the gate 301 of the pixel electrode 20,
1, a constant potential appears, and a current flows through the light emitting layer 103. Since the porous silicon constituting the light-emitting layer 103 is composed of minute silicon crystal grains, electrons move beyond the band gap as a result of the quantum confinement effect in the crystal grains, and light is emitted efficiently. At that time, as the crystal diameter decreases, the emission spectrum shifts to a higher energy side (short wavelength side). Each light emitting layer 103r of the present embodiment,
Since g and b have their respective crystal grain sizes adjusted,
Emit red, green and blue light respectively.

As described above, according to the first embodiment, it is possible to form porous silicon by applying a silicon compound to a substrate. If an application method such as an ink jet method is used, application can be performed without any limitation on an application area, and thus it is suitable for manufacturing a light-emitting element having a large area. Further, since the emission color can be changed by changing the concentration of the silicon compound, the emission color control is easy.

(Embodiment 2) In Embodiment 2 of the present invention, a semiconductor light emitting device is manufactured by a method different from that of Embodiment 1 described above. In particular, the present invention relates to a method of manufacturing a light emitting layer without affecting a driving substrate or the like due to heat. 3 and 4 are cross-sectional views illustrating a manufacturing process of the semiconductor light emitting device according to the second embodiment. The method for manufacturing a semiconductor light emitting device in the present embodiment includes a release layer forming step, a fluid application step, a heating step, an irradiation step, a driving substrate bonding step, and a separation step. The description will be made in the following order.

Release Layer Formation Step (FIG. 3A): The release layer formation step is a step of forming a release layer on a base. The pixel electrode 212 is a transparent electrode and is made of ITO or the like.
Embodiment 1 of the bank 202 (FIG. 1B)
Is the same as However, in this embodiment, the bank is formed of a conductive material such as gold. The bank 202 and the pixel electrode 212 are electrically connected. The base 210 and the release layer 211 are characteristic portions of the present embodiment, and will be described in detail below.

The base 210 has a light-transmitting property through which irradiation light can be transmitted, and may have any heat resistance and corrosion resistance that can be used in the light emitting layer manufacturing process. Preferably, the transmittance of the irradiation light is 10% or more.
% Is more preferable. This is because if the transmittance is too low, the attenuation of the irradiation light increases, and more energy is required to separate the release layer. Regarding heat resistance, depending on the shaping process, for example, 400 ° C. to 900 ° C.
Since the temperature may be higher than or equal to ° C, it is preferable to have a property that can withstand these temperatures. This is because if the base has excellent heat resistance, the temperature can be freely set under the molding conditions of the piezoelectric element. Such materials include:
For example, quartz glass, soda glass, Corning 705
9. There is a heat-resistant glass such as NEC Glass OA-2.
In particular, quartz glass is excellent in heat resistance. The strain point is 400 ° C. to 600 ° C. for ordinary glass, whereas
00 ° C.

Although there is no major limitation on the thickness of the base, it is preferably about 0.1 mm to 0.5 mm, more preferably 0.5 mm to 1.5 mm. If the thickness of the substrate is too thin, the strength is reduced. Conversely, if the thickness of the substrate is too small, irradiation light is attenuated when the transmittance of the base is low. However, when the transmittance of the irradiation light of the base is high, the thickness can be increased beyond the upper limit. The thickness of the base is preferably uniform so that the irradiation light can reach the release layer evenly.

The peeling layer 211 causes peeling (also referred to as “intralayer peeling” or “interface peeling”) in the layer or at the interface by irradiation light such as a laser beam. By irradiating light of a certain intensity, the bonding force between atoms or molecules in the atoms or molecules constituting the constituent substance disappears or decreases, and ablation (ablation) occurs,
It causes peeling. In addition, by irradiation of irradiation light,
Gas is released from the release layer and is also released by separation. There are a case where the component contained in the release layer is released as a gas to be separated, and a case where the release layer absorbs light to become a gas and the vapor is released to be separated. The following can be considered as the composition of such a release layer.

1) Amorphous silicon (a-Si) This amorphous silicon may contain H (hydrogen). The content of hydrogen is preferably about 2 at% or more, and more preferably 2 to 20 at%. This is because, when hydrogen is contained, hydrogen is released by light irradiation to generate an internal pressure in the peeling layer, which promotes peeling. The hydrogen content depends on the film formation conditions,
For example, when using the CVD method, its gas composition, gas pressure, gas atmosphere, gas flow rate, gas temperature, substrate temperature,
It is adjusted by appropriately setting conditions such as the power of the light to be input.

2) silicon oxide or silicate compound,
Titanium oxide or titanate compound, zirconium oxide
Or zirconate compound, lanthanum oxide or orchid
Various oxide ceramics such as tanoic acid compounds, or dielectric
Body or semiconductor As silicon oxide, SiO, SiO₂, Si₃O₂Is raised
I can do it. As the silicate compound, for example, K₂Si₃, L
i₂SiO₃, CaSiO₃, ZrSiO₄, Na₂S
O₃Is mentioned. As titanium oxide, TiO, Ti
₂O₃, TiO ₂Is mentioned. As a titanate compound
Is, for example, BaTiO₄, BaTiO₃, Ba₂Ti₉
O₂₀, BaTi₅O₁₁, CaTiO₃, SrTiO
₃, PbTi₃, MgTiO₃, ZrTi₂, SnTi
O₄, Al₂Ti₅, FeTiO₃Is mentioned. Oxidation
As zirconium, ZrO₂Is mentioned. Zircon
As the acid compound, for example, BaZrO₃, ZrSi
O₄, PbZrO₃, MgZrO₃, K₂ZrO₃Is raised
I can do it. 3) Nitride such as silicon nitride, aluminum nitride, titanium nitride, etc.
Ceramics 4) Organic polymer materials As organic polymer materials, -CH₂-, -CO- (keto
), -CONH- (ad), -NH- (imide),-
COO- (ester), -N = N- (azo), -CH =
Bonds such as N- (shiff) (between these atoms by light irradiation)
Bonds are broken), especially those bonds
Other compositions may be used as long as they have many components. Ma
Organic polymer materials include aromatic hydrocarbons (one or more) in the structural formula.
Or two or more benzene rings or fused rings thereof)
It may be. Specific examples of such organic polymer materials
As for polythene such as polyethylene and polypropylene
Olefin, polyimide, polyamide, polyester,
Polymethyl methacrylate (PMMA), polyphenylene
Sulfide (PPS), polyether sulfone (P
ES), epoxy resin and the like.

5) Metal As the metal, for example, Al, Li, Ti, Mn, I
n, Sn, Y, La, Ce, Nd, Pr, Gd or Sm, or an alloy containing at least one of these.

The thickness of the release layer 211 is usually 1 nm.
About 20 μm, preferably 10 nm to 2 μm
It is more preferably about 40 nm to about 1 μm. If the thickness of the release layer is too thin,
This is because the uniformity of the formed film thickness is lost and the peeling becomes uneven. If the peeling layer is too thick, the power (light amount) of the irradiation light required for the peeling needs to be increased. Also, it takes time to remove the residue of the peeling layer left after the peeling.

The method of forming the release layer may be any method that can form the release layer with a uniform thickness, and can be appropriately selected according to various conditions such as the composition and thickness of the release layer. For example, CVD (MOCCVD, low pressure CVD, ECR-CV
D), various vapor deposition methods such as vapor deposition, molecular beam deposition (MB), sputtering, ion plating, and PVD, various platings such as electroplating, immersion plating (dipping), and electroless plating. Method, Langmuir-Blodgett (LB) method, spin coating, spray coating method,
It can be applied to coating methods such as a roll coating method, various printing methods, transfer methods, ink jet methods, powder jet methods and the like. Two or more of these methods may be combined.

In particular, when the composition of the release layer is amorphous silicon (a-
In the case of Si), it is preferable to form the film by CVD, especially low pressure CVD or plasma CVD. In the case where the release layer is formed by using a ceramic by a sol-gel method or by using an organic polymer material, it is preferable to form the film by a coating method, particularly, spin coating.

It is preferable to form an intermediate layer between the peeling layer 211 and the pixel electrode 212. This intermediate layer may be, for example, a protective layer that physically or chemically protects the transferred layer during manufacture or use, an insulating layer, the transfer of components to or from the transferred layer (each migration).
At least one of a function as a barrier layer and a function as a reflective layer. The composition of this intermediate layer is
It can be appropriately selected according to the purpose. For example, in the case of an intermediate layer formed between a peeling layer made of amorphous silicon and a transferred layer, a silicon oxide such as SiO ₂ may be used. The composition of the other intermediate layer is, for example, Pt,
Metals such as Au, W, Ta, Mo, Al, Cr, Ti or alloys containing these as main components are mentioned.

[0063] The thickness of the intermediate layer is appropriately determined according to the purpose of its formation. Usually, it is preferably about 10 nm to 5 μm, and more preferably about 40 nm to 1 μm.

As the method for forming the intermediate layer, various methods described for the release layer can be applied. The intermediate layer may be formed as one layer, or may be formed as two or more layers using a plurality of materials having the same or different compositions.

Coating step (FIG. 3B):
This is a step of discharging a fluid to a pixel region surrounded by the bank 202 of the substrate, and is specifically the same as the application step (FIG. (C)) of the first embodiment. Heating Step (FIG. 3 (c)): The heating step is a step of heating to evaporate the solvent component of the filled fluid 100, and specifically, the first heating step of Embodiment 1 (FIG. 1). Same as (d)). Irradiation Step (FIG. 3D): The irradiation step is a step of supplying high energy to the fluid 100 filled in the pixel region to generate amorphous silicon granules, and is specifically described in the above embodiment. 1 (FIG. 2A).

Light Emitting Layer Forming Step (FIG. 4A): The light emitting layer forming step is a step of annealing and crystallizing the amorphous silicon particles to form a porous silicon light emitting layer. This is the same as the light emitting layer forming step of Embodiment 1 (FIG. 2C).

Driving substrate bonding step (FIG. 4B):
The drive substrate bonding step is a step of bonding the separately manufactured drive substrate and the light emitting layer manufactured in the above steps. The drive substrate is, for example, a thin film transistor 300 formed on a substrate 220 via a common electrode 221 as in the first embodiment. In the present embodiment, the description is made such that the common electrode is provided on the driving substrate side and the pixel electrode is provided on the light emitting layer side. However, the relationship between the common electrode and the pixel electrode may be reversed.

The bonding between the light emitting layer side and the driving substrate is performed via an adhesive layer. Note that the bank 202 is attached so as to be electrically connected to the drain of the thin film transistor 300. As the adhesive layer, a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive,
Various curable adhesives such as an anaerobic curable adhesive can be used. As the composition of such an adhesive, for example, any adhesive such as an epoxy-based, acrylate-based, or silicone-based adhesive can be used. The adhesive is applied by, for example, a coating method.

Peeling Step (FIG. 4C):
This is a step of irradiating illumination light from the back side of the base to cause ablation in the peeling layer and peeling the base. Irradiation light 3 may be any as long as it causes in-layer peeling and / or interfacial peeling of the peeling layer.
Light of each wavelength such as X-ray, ultraviolet light, visible light, infrared light (heat ray), laser light, millimeter wave, and microwave can be applied. Further, it may be an electron beam or a radiation (α ray, β ray, γ ray) or the like. Among them, a laser beam is preferable in that ablation easily occurs in the peeling layer. Examples of the laser light include various gas lasers, solid lasers (semiconductor lasers), and the like. Excimer lasers, Nd-
A YAG laser, an argon laser, a CO ₂ laser, a CO laser, a He—Ne laser and the like are preferable, and among them, an escimer laser is particularly preferable. An excimer laser outputs high energy in a short wavelength range, so that ablation can occur in the peeling layer in a very short time. Therefore, there is almost no rise in the temperature of the adjacent layer or the adjacent layer, and the delamination can be achieved while minimizing the deterioration and damage of the layer.

When the peeling layer 211 has a wavelength dependency that causes ablation, the wavelength of the laser beam to be irradiated is 10
It is preferably about 0 nm to 350 nm. In order to cause the release layer to undergo a layer change such as gas release, vaporization, or sublimation, the wavelength of the irradiated laser beam is 350 nm to
It is preferably about 1200 nm. In addition, the energy density of the laser beam irradiated in the case of excimer lasers, it is preferable to be 10~5000mJ / cm ² or so, and more preferably, especially 100~5299mJ / cm ² approximately. It is preferably about 1 to 1000 nsec, and more preferably about 10 to 100 nsec. If the energy density is low or the irradiation time is short, sufficient ablation does not occur.If the energy density is high or the irradiation time is long, irradiation light transmitted through the release layer or the intermediate layer may adversely affect the transferred layer. is there.

The light irradiation is preferably performed so that the intensity becomes uniform. The light irradiation direction is not limited to the direction perpendicular to the release layer, and may be a direction inclined at a predetermined angle with respect to the release layer. In the case where the area of the peeling layer is larger than the irradiation area of one irradiation light, the entire region of the peeling layer may be irradiated with the light in a plurality of times. The same location may be irradiated a plurality of times. Light of different types and different wavelengths (wavelength ranges) may be irradiated to the same region or different regions a plurality of times.

The irradiation of the irradiation light as described above
10 is peeled off (FIG. 4D). Thereafter, if necessary, a protective layer for protecting the pixel electrode 212 and the light emitting layer 103 is provided.
It is formed in the same manner as the protective layer 204 of the first embodiment.

As described above, according to the second embodiment, in addition to having the same effects as those of the first embodiment, the driving substrate is bonded after the formation of the light emitting layer. Does not hurt the substrate.

(Embodiment 3) In Embodiment 3 of the present invention, a semiconductor light emitting device is manufactured by a method different from the above embodiments. FIG. 5 is a sectional view showing a manufacturing process of the semiconductor light emitting device according to the third embodiment. The method for manufacturing a semiconductor light emitting device in the present embodiment includes a vacuum film forming step, an oxide film forming step, a hydrogen ion implantation step, and a light emitting layer forming step. The description will be made in the following order.

Vacuum film formation step (FIG. 5 (a)): The vacuum film formation step is a low pressure chemical vapor deposition (low pressure CVD (Low Pressure CVD)) process.
This is a step of forming a polycrystalline silicon film on the surface of the substrate by the Chemical Vapor Deposition) method. As the substrate 230, a material such as silicon, glass, or quartz is used.
It must have some mechanical strength and resistance to heat. A low-pressure CVD device is used for vacuum deposition. This device includes a chamber 41 and a heater 42.
A substrate 230 for depositing silicon is placed in the chamber 41.
insert. A silane-based gas such as SiH ₄ is used as the introduced gas. Chemical growth is performed by the introduced gas at a certain range of temperature and a certain range of pressure. For example, if the temperature is 400 ° C
When the silicon layer is formed in an atmosphere at a temperature of about 700 ° C. and a pressure of 0.01 to 40 mTorr, a porous silicon film 231 is formed around the substrate 230. At this time, the diameter of the crystal grains constituting the porous silicon film 231 can be changed by changing the partial pressure or the flow rate of the introduced gas. Therefore, this makes it possible to adjust the emission wavelength of the light emitting layer.

Oxide Film Forming Step (FIG. 5B): The oxide film forming step is a step of forming an oxide film for adjusting the dose of hydrogen ions before implanting hydrogen ions.
For example, by thermally oxidizing the surface of the porous silicon film 231 or by using a vapor deposition method, S
An iO ₂ layer (oxide film) 232 is formed.

Hydrogen ion implantation step (FIG. 5C): The hydrogen ion implantation step is a step in which hydrogen ions enter the surface of the porous silicon film 231 in order to increase the luminous efficiency in the light emitting layer. For example, using an ion implanter or the like,
The implantation is performed at a dose of 10 ¹⁵ to 10 ¹⁷ / cm ² . The depth of the implantation is determined by the thickness of the oxide film and the accelerating voltage. The implanted hydrogen ions break the silicon bond and terminate the silicon bond. That is, hydrogen bonds to silicon atoms on the surface to prevent generation of dangling bonds (a kind of lattice defect). Termination with hydrogen is important for efficient light emitting layer formation.

Light Emitting Layer Forming Step (FIG. 5D): The light emitting layer forming step is a step of promoting crystallization by annealing as in the first embodiment. Since silicon terminated with hydrogen has high activity and is easily oxidized, the oxide film 23
If 2 is to be removed, it is necessary to rapidly form and coat the electrodes. If the luminous efficiency can be maintained to some extent even when the oxide film 232 is provided, the oxide film 232 need not be removed.

When the porous silicon film 231 has been crystallized, finally, as described in the above embodiment, electrodes are formed and a driving substrate is bonded to form a structure of a semiconductor light emitting device. The porous silicon manufactured in this embodiment is suitable for a monochromatic light emitting element for a display device because the crystal grain diameter is determined for each substrate.

As described above, according to the third embodiment, C
A semiconductor light-emitting element can be formed by applying the VD method. According to the CVD method, it is possible to manufacture a semiconductor light-emitting device that emits light in a desired color by a partial pressure or particles of an introduced gas.

(Embodiment 4) Embodiment 4 of the present invention provides a structure of a display device using a semiconductor light emitting element manufactured by the manufacturing method of each of the above embodiments. In FIG.
FIG. 9 is a cross-sectional view illustrating a structure of a display device according to a fourth embodiment. This display device includes a semiconductor light emitting element 2 of the present invention and a modulation device 4 as shown in FIG. Semiconductor light emitting element 2
Is a light-emitting device using porous silicon manufactured in each of the above embodiments. Here, the semiconductor light-emitting device manufactured in the first embodiment is particularly exemplified. The modulation device 4 is a transmission type liquid crystal display device, and includes a liquid crystal layer 401, a common electrode 402, a pixel electrode 403, transparent substrates 404 and 405, and a polarizing plate 406.
・ 407 is provided. It is sufficient for the modulator constituted by these components to have a configuration as a general liquid crystal display device, and of course, may have another configuration. In this embodiment, a description will be given assuming that the device is a TN type liquid crystal display device.

The liquid crystal layer 401 is made of a nematic (N) phase liquid crystal material, and is sealed between the transparent substrates 404 and 405. The common electrode 402 is an electrode that applies a common potential to all pixels, and is made of a conductive transparent substrate, such as Nesa or ITO. The pixel electrode 403 is an electrode configured to be drivable for each pixel,
It is connected to a drive circuit (not shown). Note that the semiconductor light emitting element 2 of the present embodiment is configured so that the presence or absence of light emission can be controlled for each pixel, so that an image can be displayed without providing a driving unit on the modulation device 4 side. Is used for a purpose different from that of image modulation (for example, controlling the overall brightness), and it is assumed that each has a driving unit. Common electrode 402
The surface of the pixel electrode 403 is subjected to an alignment control process.
That is, a small fold of the polymer is formed by rubbing in a certain direction with a brush-like material having a polymer such as polyimide. The transparent electrodes 404 and 405 serve as a base for the common electrode 402, the pixel electrode 403, and the driving circuit, and are formed of a material having light transmittance and high mechanical strength, for example, glass or quartz. The polarizing plates 406 and 407 are configured to be able to transmit only light in a polarized state in a certain direction among the irradiated lights. The polarizing plates 406 and 407 are arranged such that the polarization directions that can be transmitted form a certain angle.

In the above structure, the liquid crystal molecules of the liquid crystal layer 401 have long molecular chains, and the electrodes are aligned (rubbed).
If the treatment has been performed, the orientation vector (long-axis direction of the molecule) is oriented in the rubbing direction. Other liquid crystal molecules in contact with the liquid crystal molecules are aligned at a certain angle with the aligned liquid crystal molecules. As a result, the molecular long axis twists away from the electrode. When the angle between the deflecting plates 406 and 407 is matched with the torsion angle in the entire width of the liquid crystal layer 401, the light of a constant polarization incident from the polarizing plate 407 is rotated by the liquid crystal molecules to rotate the plane of rotation, and transmitted through the polarizing plate 406 again. And it is injected to the other side.

On the other hand, when a voltage is applied between the common electrode 402 and the pixel electrode 403, the liquid crystal molecules are oriented in a direction parallel to the electric field. In other words, it is oriented vertically from the electrode surface. In this state, light incident from one polarizing plate 407 reaches the polarizing plate 406 on the opposite side without rotating the optical rotation plane. However, the polarization direction of the light that can pass through the polarizing plate 406 is deviated from the polarization direction of the light that can pass through the polarizing plate 407.
Cannot pass through the polarizing plate 406.

Therefore, light is modulated by applying a voltage to a pixel to be displayed darkly (a pixel in an off state) without applying a voltage to a pixel to be displayed brightly (a pixel in an on state). An image can be displayed by controlling the voltage application of the pixel according to the pixel information. Since a semiconductor light emitting element can be increased in size, a large display device can be provided. Note that each pixel in the semiconductor light emitting element 2 may be controlled separately from the modulation device. If the pixel voltage of the semiconductor light emitting element 2 is set to zero, no light is emitted, so that the display is dark regardless of whether the voltage is applied to the modulator 4. Therefore, by emitting light only in a part of the region or emitting light only in a pixel of a specific color, it is possible to display only a part or display in a specific color.

As described above, according to the fourth embodiment, since the semiconductor light emitting device of the present invention is provided, a large-sized display device can be provided. Further, by controlling the light emission of the semiconductor light emitting element for each pixel (or for each block), display control can be performed without depending on image information.

(Other Modifications) The present invention can be applied in various modifications without depending on the above embodiment. For example, the layer structure of the semiconductor light emitting element and the structure of the display element are applicable without being limited to the above embodiment. Also, in the manufacturing process, when the adhesion between the fluid and the substrate or bank is poor,
The substrate or the bank may be subjected to a surface treatment. When the fluid contains polar molecules (for example, when it contains water), a method of applying a silane coupling agent or reverse sputtering with argon or the like is used as a surface modification treatment so that the underlying surface has affinity. And various known methods such as a corona discharge treatment, a plasma treatment, an ultraviolet irradiation treatment, an ozone treatment, and a degreasing treatment. When the fluid does not contain polar molecules, a method of applying a silane coupling agent, a method of forming a porous film of aluminum oxide or silica, a method of applying reverse sputtering with argon, a corona discharge treatment, a plasma treatment Various known methods such as ultraviolet irradiation treatment, ozone treatment, and degreasing treatment can be applied. After surface treatment,
Since the adhesion of the fluid to the oxide film can be controlled, the dielectric thin film can be formed in a desired shape.

[0088]

According to the present invention, since porous silicon is formed from a solution of a silicon compound, a semiconductor light emitting device can be easily and economically manufactured even for a large light emitting device. According to the present invention, since porous silicon is formed by a vacuum film forming method, a semiconductor light emitting device can be easily and economically manufactured even for a large light emitting device. According to the present invention, since the semiconductor light emitting device manufactured by the above manufacturing method is provided, a bright large display device can be economically manufactured. In particular, when a semiconductor element is manufactured by an ink jet method, waste of a silicon compound and a silicon material is reduced, and waste of the material can be prevented to further reduce the manufacturing cost. Also, since industrial waste liquid is greatly reduced, it can greatly contribute to environmental protection. In addition, if the inkjet method is adopted, a part of the manufacturing process of the semiconductor light emitting device can be performed by a small device that can be installed in a general household.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view (No. 1) of a manufacturing process of a semiconductor light emitting device according to a first embodiment.

FIG. 2 is a sectional view (part 2) of the semiconductor light-emitting device according to Embodiment 1 during the manufacturing process.

FIG. 3 is a cross-sectional view (part 1) of a process for manufacturing a semiconductor light-emitting device according to a second embodiment.

FIG. 4 is a cross-sectional view (part 2) of a process for manufacturing the semiconductor light-emitting device according to the second embodiment.

FIG. 5 is a cross-sectional view illustrating a manufacturing process of the semiconductor light emitting device according to the third embodiment.

FIG. 6 is a cross-sectional view illustrating a structure of a display device according to a fourth embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Ink-jet recording head 2 ... Semiconductor light emitting element 3 ... Laser light 4 ... Modulator 100 ... Fluid 101 ... Amorphous silicon agglomerate 102 ... Solvent 103 ... Light emitting layer 200, 230 ... Substrates 201, 212, 403 ... Pixel electrode 202 ... Bank 203, 221, 402 ... Common electrode 210 ... Base 211 ... Release layer 231 ... Porous silicon film 232 ... Oxide film 300 ... Thin film transistor

Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 27/15 H05B 33/14 Z 33/00 B41J 3/21 L H05B 33/10 33/14

Claims (20)

[Claims] 1. A method of manufacturing a semiconductor light-emitting device including a light-emitting layer composed of porous silicon, comprising: applying a fluid in which a silicon compound is dissolved in a solvent to a substrate; Applying energy to the silicon compound to change the bond in the silicon compound to generate an agglomerate of amorphous silicon; And a method of manufacturing a semiconductor light emitting device. 2. A method for manufacturing a semiconductor light-emitting device including a light-emitting layer made of porous silicon, comprising: applying a fluid in which a silicon crystal grain having a constant diameter is dissolved in a solvent to a substrate; Forming a light-emitting layer of porous silicon by applying energy to crystal grains for a certain period of time. 3. A method for manufacturing a semiconductor light emitting device having a light emitting layer composed of porous silicon, wherein a silicon layer is formed by a chemical vapor deposition method under a low pressure atmosphere using a silicon compound as an introduction gas under certain conditions. A step of implanting hydrogen ions into the silicon layer, and a step of applying energy to the silicon layer into which the hydrogen ions have been implanted for a certain time to form the light emitting layer of porous silicon. A method for manufacturing a semiconductor light emitting device, characterized by: 4. The method according to claim 1, wherein an emission wavelength of the light emitting layer is adjusted by adjusting a concentration of the silicon compound dissolved in the solvent. 5. The step of applying the fluid to a substrate,
2. The method according to claim 1, wherein an appropriate amount of the fluid is discharged by an ink jet method. 6. The method according to claim 1, wherein an alkylsilane compound or a phenylsilane compound is used as the silicon compound. 7. The method according to claim 6, wherein the alkylsilane compound or the phenylsilane compound is any one of trimethylmonosilane, trimethyltrisilane, phenylmonosilane, and polysilane. 8. The method according to claim 1, wherein the solvent for dissolving the silicon compound is pentane (C ₅ H ₁₂ ). 9. The method according to claim 1, wherein the fluid is obtained by dissolving phenylmonosilane as the silicon compound in substantially the same amount in pentane (C ₅ H ₁₂ ) as the solvent. 10. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the step of generating the amorphous silicon includes irradiating light such as an excimer lamp having a specific wavelength as the energy for several minutes. 11. The method according to claim 2, wherein the emission wavelength of the light emitting layer is adjusted by adjusting the diameter of silicon particles dissolved in the solvent. 12. The method according to claim 2, wherein the solvent for dissolving the silicon particles is ethoxyethanol. 13. The step of forming the silicon layer includes forming the silicon layer using a low-pressure chemical vapor deposition method at a temperature of 400 to 700 ° C. and an atmospheric pressure of 0.01 to 40 mTorr. A method for manufacturing a semiconductor light emitting device according to claim 3. 14. The step of forming a silicon layer uses a silane gas such as SiH _{4 as} an introduction gas.
3. The method for manufacturing a semiconductor light emitting device according to 1. 15. The step of forming the silicon layer comprises changing a partial pressure or a flow rate of the introduced gas,
The method for manufacturing a semiconductor light emitting device according to claim 14, wherein a diameter of an agglomerate constituting the silicon layer is changed to adjust an emission wavelength of the light emitting layer. 16. The method according to claim 1, wherein in the step of forming the light emitting layer, the porous silicon is formed by applying any one of light, heat, and an electron beam as the energy. A method for manufacturing a semiconductor light emitting device. 17. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein: a step of manufacturing a driving substrate for driving the light emitting layer; and forming the driving substrate on the driving substrate. A method for manufacturing a semiconductor light emitting device, comprising: a step of forming a light emitting layer; and a step of forming an upper electrode on the light emitting layer. 18. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein a driving substrate for driving said light emitting layer is formed on said substrate; And a step of bonding the light emitting layer and the separated drive substrate so as to be in electrical contact with each other. 19. The step of forming the drive substrate, the step of forming the drive substrate after providing a release layer made of a material that causes ablation by irradiation of a fixed energy on the substrate, and the step of peeling the drive substrate 19. The method for manufacturing a semiconductor light emitting device according to claim 18, wherein the driving substrate is separated at the separation layer. 20. A semiconductor light emitting device formed by the method for manufacturing a semiconductor light emitting device according to claim 1; and a modulator provided so as to modulate light from the semiconductor light emitting device. A display device, characterized in that: