JPH11273555A - Manufacture of field emission type cold cathode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing field emission type cold cathodes with a large surface area, excellent evenness of field emission and reproducibility, and high field emission efficiency at high mass productivity. SOLUTION: A field emission type sharp cold cathode 18 with a large surface area is manufactured by following processes: forming a hole 12b in a metal substrate 11, forming a sharp recessed part 12 by narrowing the inner face of the hole 12b by oxidation or coating, filling the inside of the recessed part 12 with an emitter material layer 14, joining the emitter material layer 14 with a supporting substrate 17, and separating the metal substrate 11 from the emitter material layer 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission cold cathode.

[0002]

2. Description of the Related Art In recent years, field emission cold cathodes using field emission cold cathodes utilizing advanced Si semiconductor processing technology have been actively developed. A representative example is CA Spindt et al., Journa.
l of Applied Physics, Vol.
47, 5248 (1976).

In this field emission type cold cathode, after forming a SiO ₂ layer and a gate electrode layer on a Si single crystal substrate, a hole having a diameter of about 1.5 μm is further formed. The emitter on the cone for performing the above was produced by a vapor deposition method. Specifically, as shown in the cold cathode unit manufacturing step diagram of FIG. 13, SiO ₂ layer on a Si single crystal substrate 206 2
03, a deposition method such as CVD, the Mo layer 202 and the Al layer 20
1 is formed by a sputtering method, and after pinholes are formed in these layers by etching, a metal serving as an emitter, for example, Mo is vacuum-deposited while rotating the substrate from a vertical direction. Utilizing the blocking, the conical emitter 2
05 is formed to produce a field emission cold cathode.

[0004]

However, the conventional method of manufacturing a field emission cold cathode and the field emission cold cathode manufactured by the method have the following important problems.

First, in the above-described conventional example, an emitter is formed on the inner surface of a hole by utilizing the fact that the diameter of a pinhole formed in the Al layer 201 is gradually reduced by a rotary evaporation method. Therefore, the height of the emitter, the shape of the tip, and the like vary, resulting in poor field emission uniformity. In addition, the sharpness of the tip of the emitter required to improve the field emission efficiency is lacking, and the field emission efficiency is reduced and the power consumption is large.

In addition, reproducibility and yield are poor, and when a large number of field emission cold cathodes are manufactured on the same substrate, there is a problem that the production cost increases. In particular, is the demand for large flat displays increasing in recent years, such as FED (Field Emission Display),
There is a problem that it is difficult to manufacture a sharp and uniform field emission type cold cathode having a large area, the productivity is low, and the cost increases.

The present invention has been made to solve such a problem.

That is, the present invention has good field emission uniformity, small variation, high field emission efficiency, and
It is an object of the present invention to provide a method of manufacturing a field emission cold cathode which can be easily integrated, has a large area, is rich in productivity, and can manufacture a large number of sharp field emission cold cathodes having the same shape and sharpness.

[0009]

According to a first aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode, comprising the steps of: forming a sharp concave portion on a metal substrate; Forming an emitter material layer on the metal substrate by filling the metal substrate with an emitter material, and separating the metal substrate.

According to a second aspect of the present invention, there is provided a method of manufacturing a field emission cold cathode according to the present invention, wherein a concave portion is formed on a metal substrate, and a metal layer is formed on an inner surface of the concave portion to form a sharp concave portion. Forming an emitter material layer on the metal substrate by filling the sharp recess with an emitter material; and separating the metal substrate.

According to a third aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the present invention, wherein a step of forming a hole on a metal substrate and forming a metal oxide layer by oxidizing an inner surface of the hole are performed. The method includes a step of forming a recess, a step of filling the sharp recess with an emitter material to form an emitter material layer on the metal substrate, and a step of removing the metal substrate.

According to a fourth aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode, comprising the steps of: forming a through hole on a metal substrate;
Forming a metal layer on the inner surface of the through hole to form a sharp recess; filling the sharp recess with an emitter material to form an emitter material layer on the metal substrate; and And a removing step of removing.

According to a fifth aspect of the present invention, there is provided a method for manufacturing a field emission cold cathode, comprising the steps of: forming a through hole on a metal substrate;
Forming a metal oxide layer by oxidizing the inner surface of the through hole to form a sharp recess, and filling the emitter material into the sharp recess to form an emitter material layer on the metal substrate; And a removing step of removing the metal substrate.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the fourth or fifth aspect, wherein the through-hole has a cylindrical shape. It is characterized by the following.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a field emission cold cathode according to the fourth or fifth aspect, wherein the radius of the through hole is equal to that of the metal substrate. It is large on the surface and small near the center in the thickness direction of the metal substrate.

In the method of manufacturing a field emission cold cathode according to the present invention, a step of forming a hole on a metal substrate and a step of forming a metal layer on an inner surface of the hole to form a sharp recess. Supplying an emitter material to the sharp concave surface to form an emitter material layer on the metal substrate; and filling a resin on the emitter material layer to form a resin layer supporting the emitter material layer. And removing the metal substrate.

According to a ninth aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the present invention, wherein a step of forming a hole on a metal substrate and forming a metal oxide layer by oxidizing an inner surface of the hole are performed. Forming a concave portion, supplying an emitter material to the sharp concave surface to form an emitter material layer on the metal substrate, and filling the emitter material layer with a resin to support the emitter material layer Forming a resin layer, and removing the metal substrate.

According to a tenth aspect of the present invention, in the method of manufacturing a field emission cold cathode of the present invention, a first metal layer having a through hole is formed on a substrate, and a second metal layer is formed on the inner surface of the through hole. Forming a layer to form a sharp recess, filling the sharp recess with an emitter material to form an emitter material layer, and removing the first metal layer and the second metal layer And a step.

According to a eleventh aspect of the present invention, there is provided a method of manufacturing a field emission cold cathode according to the present invention, wherein a metal layer having a through hole is formed on a substrate, and a metal oxide layer is formed by oxidizing an inner surface of the through hole. Forming a sharp concave portion, filling the sharp concave portion with an emitter material to form an emitter material layer, and removing the metal layer and the metal oxide layer. I do.

According to a twelfth aspect of the present invention, there is provided a method of manufacturing a field emission cold cathode according to the tenth or eleventh aspect, wherein the radius of the through hole is closer to the opening. It is large and small on the substrate side.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the twelfth aspect, wherein the through-hole has a straight or curved cross section. It is characterized by having.

According to a fourteenth aspect of the present invention, there is provided a method for manufacturing a field emission cold cathode according to the present invention, wherein a step of forming a hole on a metal substrate and a step of forming a metal layer on an inner surface of the hole to form a sharp recess. Forming an emitter material layer on the metal substrate by filling the sharp recess with an emitter material, removing the metal substrate, and forming an insulating layer on the emitter material layer. Forming a gate electrode layer on the insulating layer; and removing a part of the insulating layer and the gate electrode layer.

According to a fifteenth aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the present invention, wherein a step of forming a hole on a metal substrate and forming a metal oxide layer by oxidizing an inner surface of the hole are performed. Forming a recess, filling the sharp recess with an emitter material to form an emitter material layer on the metal substrate, removing the metal substrate, and removing an insulating layer on the emitter material layer. Forming a gate electrode layer on the insulating layer, and removing a part of the insulating layer and the gate electrode layer. Claim 1
6. The method for manufacturing a field emission cold cathode according to claim 6 is the method for manufacturing a field emission cold cathode according to any one of claims 1 to 5, 10, 11, 14, and 15. After forming the material layer, the method further comprises a step of bonding a support layer on the emitter material layer.

According to a seventeenth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the eighth or ninth aspect, further comprising forming the resin layer, A step of bonding a support layer to the resin layer.

The method for manufacturing a field emission cold cathode according to the present invention according to claim 18 is the method for manufacturing a field emission cold cathode according to any one of claims 1 to 3, 8, 9, 14, and 15. A step of forming a reinforcing layer on a surface opposite to the surface on which the concave portion is formed.

According to a nineteenth aspect of the present invention, there is provided a method of manufacturing a field emission cold cathode according to the first to eighteenth aspects, wherein the metal substrate is made of Ni or Ni.
It is an alloy.

According to a twentieth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the nineteenth aspect, wherein the Ni alloy is an Fe-Ni alloy or NiCo. There is a feature.

According to a twenty-first aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the second or fourth aspect, wherein the step of forming the recess is performed. Is performed by plating, oxidation or thermal oxidation.

According to a twenty-second aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the first, third, fifth, ninth, eleventh and fifteenth aspects, wherein It is characterized in that the forming step is performed by plating, oxidation or thermal oxidation.

According to a twenty-third aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the first to twenty-second aspects, wherein the core material is further formed after the emitter layer is formed. And a step of forming a layer.

According to a twenty-fourth aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the twenty-third aspect, wherein the core layer functions as a resistance ballast. There is a feature.

According to a twenty-fifth aspect of the present invention, there is provided a method for manufacturing a field emission type cold cathode according to the first to twenty-fourth aspects, wherein the removing step is performed by a dissolution treatment. It is characterized by.

According to a twenty-sixth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the first to twenty-fifth aspects, wherein the metal substrate is a metal sheet or a metal film. There is a feature.

In the method of manufacturing a field emission cold cathode according to the first aspect, a sharp concave portion is formed on the metal substrate, and the concave portion is used as a mold. Therefore, a field emission type cold cathode having a sharp shape can be efficiently manufactured in a short time.

According to a second aspect of the present invention, a sharp concave portion is formed by applying a metal layer to the concave portion formed on the metal substrate, and the concave portion is used as a mold. Even if the shape and the size of the concave portion of the metal substrate vary, the sharp concave portion becomes more uniform in shape and size between the sharp concave portions. For this reason, a field-emission cold cathode formed by using this sharp concave part as a mold and filling it with an emitter material can be uniform in shape and size, and can have a high field emission uniformity. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to a third aspect of the present invention, in the method of manufacturing a field emission cold cathode, the inner surface of the hole formed on the metal substrate is oxidized to form a metal oxide layer to form a sharp concave portion. Use as a template. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to a fourth aspect of the present invention, a sharp concave portion is formed by applying a metal layer to an inner surface of the through hole formed on the metal substrate, and the concave portion is used as a mold. . Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Furthermore, in this manufacturing method, two sharp recesses are formed simultaneously from both sides of the through hole using the through hole formed on the metal substrate, so that the production efficiency is high. Further, since the through-holes are easily uniform in shape, variations in the shape and size of the sharp concave portion and, consequently, the field emission cold cathode are reduced.

According to a fifth aspect of the present invention, in the method of manufacturing a field emission cold cathode, the inner surface of the through hole formed on the metal substrate is oxidized to form a metal oxide layer to form a sharp concave portion. Is used as a template. Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Furthermore, in this manufacturing method, two sharp recesses are simultaneously formed from both sides of the through hole using the through hole formed on the metal substrate, so that the production efficiency is high.

In the method of manufacturing a field emission cold cathode according to a sixth aspect, in the method of manufacturing a field emission cold cathode according to the fourth or fifth aspect, a cylindrical tubular thing is adopted as the through hole. The shape of the through holes is easy to align, sharp recesses,
As a result, variations in the shape and size of the field emission cold cathode are reduced.

According to a seventh aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the fourth or fifth aspect, the through hole has a large radius on the surface of the metal substrate. Since a metal substrate that is smaller near the center in the thickness direction is adopted, the sharpness of the recess is high,
As a result, a field emission cold cathode having a high emitter height can be obtained.

In the method of manufacturing a field emission cold cathode according to claim 8, a sharp concave portion is formed by applying a metal layer to the inner surface of the hole formed on the metal substrate, and the concave portion is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, since the resin layer supporting the emitter material thin film is formed, a high-productivity, low-cost, large-area field emission cold cathode can be obtained.

According to a ninth aspect of the present invention, in the method of manufacturing a field emission cold cathode, the inner surface of the hole formed on the metal substrate is oxidized to form a metal oxide layer to form a sharp concave portion. Use as a template. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, since the resin layer supporting the emitter material thin film is formed, a high-productivity, low-cost, large-area field emission cold cathode can be obtained.

According to a tenth aspect of the present invention, in the method of manufacturing a field emission cold cathode, a first metal layer having a through hole is formed on the substrate, and a metal layer is applied to the inner surface of the through hole to sharpen the metal layer. A recess is formed, and this recess is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

In the method of manufacturing a field emission cold cathode according to claim 11, a first metal layer having a through hole is formed on the substrate, and an inner surface of the through hole is oxidized to form a metal oxide layer. Is formed to form a sharp concave portion, and this concave portion is used as a mold. Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, the concave portion has a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained. In the method of manufacturing a field emission cold cathode according to claim 12, in the method of manufacturing a field emission cold cathode according to claim 10 or 11, the through hole has a large radius on the opening side and a small radius on the substrate side. By using such a modified structure, a field emission cold cathode having a high concave portion and a high emitter height can be obtained.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a field emission type cold cathode according to the twelfth aspect, wherein the through hole has a straight or curved cross section. As a result, a field emission cold cathode having a higher concave portion sharpness and a higher emitter height can be obtained.

In the method of manufacturing a field emission cold cathode according to a fourteenth aspect, a sharp concave portion is formed by applying a metal layer to the inner surface of the hole formed on the metal substrate, and the concave portion is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, an insulating layer and a gate electrode layer are formed on the emitter material layer, and a part of the insulating layer and the gate electrode layer is removed. And can be manufactured at once, so that productivity is very high.

According to a fifteenth aspect of the present invention, in the method of manufacturing a field emission cold cathode, the inner surface of the hole formed on the metal substrate is oxidized to form a metal oxide layer to form a sharp concave portion. Use as a template. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, an insulating layer and a gate electrode layer are formed on the emitter material layer, and a part of the insulating layer and the gate electrode layer is removed, whereby the field emission type cold cathode and the gate electrode layer are removed. And can be manufactured at once, so that productivity is very high.

According to a sixteenth aspect of the present invention, there is provided a method for manufacturing a field emission cold cathode according to any one of the first to fifth, tenth, eleventh, fourteenth, and fifteenth aspects.
After the formation of the emitter material layer, the support layer is further joined on the emitter material layer, so that the emitter material layer is reinforced and the area can be increased, thereby improving productivity and uniformity. be able to.

According to a method of manufacturing a field emission cold cathode according to a seventeenth aspect, in the method of manufacturing a field emission type cold cathode according to the eighth or ninth aspect, after forming the resin layer, the method further comprises the step of: Since the support layer is joined, the emitter material thin film layer and the resin layer are reinforced, so that the area can be increased, and productivity and uniformity can be improved.

According to a method of manufacturing a field emission cold cathode according to claim 18, in the method of manufacturing a field emission cold cathode according to any one of claims 1 to 3, 8, 9, 14, and 15, A reinforcing layer is formed on the surface of the metal substrate opposite to the surface on which the metal layer is formed. Therefore, the metal substrate is reinforced, so that the area of the metal substrate can be increased, and productivity and uniformity can be improved.

In the method of manufacturing a field emission cold cathode according to a nineteenth aspect, in the method of manufacturing a field emission cold cathode according to the first aspect, Ni or a Ni alloy having a small coefficient of thermal expansion is used as the metal substrate. As a result, the productivity can be improved as a result of using a metal substrate having a large area, and the manufacturing cost of the field emission cold cathode can be reduced.

According to a twentieth aspect of the present invention, in the method of the nineteenth aspect, Ni or a Ni alloy having a small coefficient of thermal expansion is used as the Ni alloy. As a result, the productivity can be improved as a result of using a metal substrate having a large area, and the manufacturing cost of the field emission cold cathode can be reduced.

In the method for manufacturing a field emission cold cathode according to the twenty-first aspect, in the method for manufacturing a field emission cold cathode according to the second, fourth, eighth, tenth, and fourteenth aspects, plating is employed as the recess forming step. Therefore, the sharp concave portion formed when the metal layer or the metal oxide layer is formed on the inner surface of the hole of the metal substrate has a uniform shape and a sharp point.

According to a method of manufacturing a field emission cold cathode according to claim 22, in the method of manufacturing a field emission cold cathode according to claims 1, 3, 5, 9, 11, and 15, the step of forming a concave portion includes oxidizing. Alternatively, since thermal oxidation is employed, the sharp concave portions formed when the metal layer or the metal oxide layer is formed on the inner surface of the hole of the metal substrate can have a uniform shape and a sharp point.

According to a twenty-third aspect of the present invention, in the method of manufacturing a field emission type cold cathode according to the first to twenty-second aspects, a core layer is further formed after forming the emitter layer. Therefore, the mechanical strength and electrical strength of the emitter layer are improved, and a highly durable field emission cold cathode can be obtained.

According to a twenty-fourth aspect of the present invention, in the method of manufacturing a field emission type cold cathode according to the twenty-third aspect, the core material layer that functions as a resistance ballast is employed. This prevents an excessive voltage from being applied to the cathode tip, thereby improving the reliability and durability of the field emission cold cathode.

In the method for manufacturing a field emission cold cathode according to the twenty-fifth aspect, since the dissolving treatment is employed as the removing step in the method for manufacturing a field emission cold cathode according to the first to twenty-fourth aspects, the cold cathode is formed once. Such a sharp concave portion can be obtained quickly without damaging it, and a uniform cathode can be manufactured with high productivity.

In the method of manufacturing a field emission cold cathode according to claim 26, in the method of manufacturing a field emission cold cathode according to claims 1 to 25, a metal sheet or a metal film is employed as the metal substrate. Thus, a field emission type cold cathode having a large area can be obtained. As a result, productivity is improved and manufacturing costs can be kept low.

[0075]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) FIGS. 1A to 1E are schematic views showing a process for manufacturing a field emission cold cathode according to a first embodiment of the present invention. A method for manufacturing a field emission cold cathode in this embodiment will be described.

First, a metal substrate 11 such as a metal film or a metal sheet is provided with a hole 12b having a portion narrowed in the middle.
To form As a method of forming such a hole 12b, there is a method utilizing etching of a Ni alloy substrate as described below.

That is, first, a resist is applied on both surfaces of the Ni alloy substrate 11 by a spin coating method, a printing method, a spray coating method or the like. Next, after patterning such as exposure and development is performed using an exposure machine, the Ni substrate is etched with a ferric chloride etching solution.

After the removal of the resist, as shown in FIG. 1A, a hole 12b having a diameter of about 5 μm, an intermediate narrow portion of about 1 μm, and a depth of about 5 μm is formed on a NiFe alloy (amber) substrate.

Next, as shown in FIG.
N on the alloy (amber) substrate 11 including the inside of the hole 12b
An iFe oxide layer, for example, an oxide layer 13 of NixFel-x04 or the like is formed, the hole is closed at a narrow portion in the middle, and two sharp concave portions 12 are formed.

In this embodiment, the thickness O.D. Although the NiFe thermal oxide layer heat 13 is formed by heat treatment in an oxygen atmosphere so as to have a thickness of 4 μm, the thermal oxide layer may be formed in an air atmosphere or high-temperature high-pressure steam. In addition, it may be formed using electroplating, for example, Ni plating,
After forming the electroplating layer, the electroplating layer may be further oxidized.

Next, a molybdenum layer, for example, including the inner surface of the concave portion, is formed as the emitter material layer 14 on the NiFe oxide layer 13 by sputtering, vapor deposition, printing, electroplating, or the like. Note that this emitter material layer may be used as a cathode line layer.
On the emitter material layer, a conductive layer 15 which also serves as a bonding layer with the cathode line layer or the support substrate 17 may be formed. Further, the conductive layer 15 also serving as the cathode line or the like is used.
May be formed on the support substrate 17 in advance. This state is shown in FIG. Although omitted in the present embodiment, polysilicon having a resistance ballast effect, silicon such as amorphous silicon, or a core material resistance layer made of a ceramic oxide such as cermet is formed next to the emitter layer. You may leave. In this case, in order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like.

Next, as a supporting substrate serving as a second substrate,
A glass substrate 17 is prepared, and an emitter material layer 14 is interposed between the glass substrate 17 and the metal substrate 11 as shown in FIG.

As the bonding method, an adhesive or the like may be used. In this embodiment, the back surface of the glass substrate 17 is coated with an Al layer (not shown) and bonded by an electrostatic bonding method.

Next, the Al layer 15 on the back of the glass substrate 17
Is removed with a mixed acid solution such as HNO ₃ and HF, and the NiFe alloy (amber) substrate 11 is etched with an etching solution such as hydrochloric acid.
Then, the oxide layer or the electroplating layer 13 is removed, and the projection 18 made of an emitter material such as molybdenum is projected. The projection 18 corresponds to the emitter material filled in the recess 12 of the NiFe alloy (amber) substrate 11 and is sharp,
A field-emission cold cathode with high productivity can be obtained. This state is shown in FIG.

As is, it can be used for various electronic devices. For example, as an insulating layer between a gate and an emitter, SiO ₂ or SiN is formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. And
The gate electrode layer, for example, Ni, chromium, using tungsten, etc., electroless plating, electroplating, printing method, a sputtering method, an evaporation method, or the like, comprising a convex portion area covered SiO ₂ layer, SiO ₂ Formed on the insulating layer, and then C
A gate opening may be formed by using an MP method, a CDE method, an RIE method, a wet etching method, or the like, and the gate opening may be used as an emitter with a gate.

Further, it is also possible to use the thus obtained sharp field emission type cold cathode as a master, and to manufacture a field emission type cold cathode having the same shape as a replica of the master. For example, the sharp field emission cold cathode formed as described above is used as a master, an insulating layer is formed on the surface of the field emission cold cathode, a second substrate layer is formed thereon, and then The field emission cold cathode as the master is separated from the second substrate layer. The shape of the field emission cold cathode as the master is engraved on the surface of the second substrate layer obtained at this time.

Then, a field emission type cold cathode having substantially the same shape as the master is formed by using the second substrate layer as a female mold and filling the second substrate layer with an emitter material layer.

(Second Embodiment) FIGS. 2A to 2F are schematic views showing a manufacturing process of a field emission cold cathode according to another embodiment of the present invention. A method for manufacturing a field emission cold cathode according to the embodiment will be described.

First, a hole 12b having a narrowed portion in the middle is formed in a metal substrate 11 such as a metal film or a metal sheet.
To form As a method for forming such a hole 12b, there is a method utilizing etching of a Ni substrate as described below. That is, first, a resist is applied on both surfaces of the Ni alloy substrate 11 by a spin coating method, a printing method, a spray coating method, or the like. Next, after patterning such as exposure and development is performed using an exposure machine, the Ni substrate is etched with a ferric chloride etching solution. After the removal of the resist, as shown in FIG.
Formed on a substrate.

Next, as shown in FIG. 2B, Ni electroplating is performed on the Ni substrate 11 including the inside of the hole 12b, and then a Ni oxide layer is formed. The hole is closed, and two sharp concave portions 12 are formed. In this embodiment, after forming an electroplating layer of 1.5 μm, it is further thermally oxidized,
The thermal oxide layer has a thickness of O.D. Although the Ni thermal oxide layer 13 is formed by heat treatment in an oxygen atmosphere so as to have a thickness of 8 μm, the thermal oxide layer may be formed in an air atmosphere or high-temperature high-pressure steam.

Next, on the Ni oxide layer 13, a molten polycarbonate resin, an amorphous polyolefin resin,
Pressurizing at least one of thermoplastic resin such as polymethyl methacrylate resin, ultraviolet curable resin such as acrylic resin and epoxy resin, or thermosetting resin such as epoxy resin and polymethyl methacrylate resin The resin layer 142 is formed by filling with at least one of injection of ultraviolet light and normal pressure. At this time, for example, Au,
Cathode which mixes fine particles and ultra fine particles of Pt, Ag, Cu, Mo, W, etc., or makes the resin itself conductive, forms a core material resistance ballast layer, and further serves as a glass substrate and a bonding layer. It is desirable to form the line layer 15.
The conductive layer 15 also serving as a cathode line or the like may be formed on the glass support substrate 17 in advance. This state is shown in FIG. 2C. Next, a glass supporting substrate 17 is prepared as a supporting substrate to be a second substrate, and a resin material layer 142 is sandwiched between the glass substrate 17 and the metal substrate 11. Glue to

As the bonding method, resin bonding, low melting point glass, water glass, SOG (so-called spin-on-glass) solution, electrostatic bonding, or the like may be used. This state is shown in FIG. Next, the NiFe alloy (amber) substrate 11 and the oxide layer or the electroplating layer 13 are removed with a NiFe metal substrate and an etching solution such as hydrochloric acid, and a thick resin layer 142 including the sharp projections 18 is obtained.

By repeatedly manufacturing in such a process, a large amount of large-area convex resin can be obtained many times with good reproducibility. In the above embodiment, the emitter is formed from two concave portions, but only the concave portion on one side may be used. This state is shown in FIG.

Next, on the resin material layer 142, for example, a molybdenum layer is formed as the emitter material layer 14 including the projections 18 by sputtering, vapor deposition, printing, electroplating, or the like. A field emission cold cathode that is sharp and highly productive can be obtained. This state is shown in FIG. At this time, the emitter material layer 14 may be formed as a cathode line, or, for example, Au, P
Fine particles of t, Ag, Cu, Mo, W, etc., or by mixing ultrafine particles, imparting conductivity to the resin itself, or carbonizing the resin layer to make the resin layer a conductive layer, When used as a core material resistance layer, a cathode line may be formed on the back surface of the resin.

When used as a core material resistance layer,
In order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like. As it is, it can be used for various electronic devices.
iO ₂ , SiN, etc. are formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, etc., and further, a gate electrode layer is formed by electroless plating, electroplating using, for example, Ni, chromium, tungsten or the like. , a printing method, a sputtering method, an evaporation method, or the like, including a convex region covered with the SiO ₂ layer was formed on the SiO ₂ insulating layer, then, CMP
The gate opening may be formed by using a method, CDE method, RIE method, wet etching method, or the like to use as an emitter with a gate. Further, a plurality of large-area field-emission cold cathodes obtained in the above embodiment are arranged by a method such as tiling,
Further, a field emission cold cathode having a large area may be obtained.

(Third Embodiment) FIGS. 3A to 3F are schematic views showing a manufacturing process of a field emission type cold cathode according to another embodiment of the present invention. A method for manufacturing a field emission cold cathode according to an example will be described.

First, a through hole 12b is formed in a metal substrate 11 such as a metal film or a metal sheet.

As a method of forming such a penetrating hole 12b, there is a method utilizing etching of a Ni substrate as described below. That is, first, a resist is applied on both surfaces of the Ni alloy substrate 11 by a spin coating method, a printing method, a spray coating method, or the like. Next, after performing patterning such as exposure and development using an exposure machine, the Ni substrate is etched with a ferric chloride etching solution. After removing the resist, as shown in FIG.
A hole 12b having a depth of about 15 μm is formed on the Ni substrate.

Next, as shown in FIG. 3B, a thick Ni electroplating is performed on the Ni substrate 11 including the inside of the hole 12b to cover the hole 12b, and then a Ni oxide layer is formed. , Two sharp concave portions 12 are formed.

In this embodiment, the electroplating layer is 8 μm
After the formation, the thermal oxidation was further performed, and the Ni thermal oxide layer 13 was formed by heat treatment in an oxygen atmosphere so that the thermal oxide layer had a thickness of 1 μm. May form a thermal oxide layer.

Next, as shown in FIG.
On the oxide layer 13, including a concave portion, a molten polycarbonate resin, an amorphous polyolefin resin, a thermoplastic resin such as a polymethyl methacrylate resin, an acrylic resin, an ultraviolet curable resin such as an epoxy resin, or an epoxy resin. At least one of a resin and a thermosetting resin such as a polymethyl methacrylate resin is filled by at least one of pressurization, ultraviolet irradiation, and normal pressure injection to form the resin layer 142.

At this time, the resin layer 142 may be used as a supporting substrate. For example, fine particles or ultrafine particles of Au, Pt, Ag, Cu, Mo, W or the like may be mixed, or the resin itself may have conductivity. It is desirable to form a core material resistance ballast layer, and further, to form a cathode line layer 15 which also serves as a bonding layer with the glass substrate, and bond it with the glass substrate. The conductive layer 15 also serving as a cathode line or the like may be formed on the glass support substrate 17 in advance.

Next, the NiFe metal substrate and the NiFe alloy (amber) substrate 11 and the oxide layer or the electroplating layer 13 are removed with an etching solution such as hydrochloric acid to obtain a thick resin layer 142 including the sharp projections 18.

By repeatedly manufacturing in such a process, a large amount of a large-area convex resin can be obtained many times with good reproducibility. This state is shown in FIG.

Next, on the resin material layer, for example, a molybdenum layer is formed as the emitter material layer 14 by sputtering, vapor deposition, printing, electroplating, etc., including the projections 18, and is sharpened. Thus, a field-emission cold cathode with high productivity can be obtained. This state is shown in FIG. On this occasion,
This emitter layer may be formed and used as a cathode line, or, for example, Au, Pt, Ag,
Fine particles such as Cu, Mo, W, etc.
By imparting conductivity to the resin itself, or by carbonizing the resin layer, the resin layer is used as a conductive layer, or when used as a core material resistance layer, a cathode line is formed on the resin back surface. Is also good. When used as a core material resistance layer, it is desirable that a large number of emitters be electrically separated by etching or the like in order to enhance the resistance ballast effect.

FIG. 11F shows an example in which the conductive layer 15 is laminated on the glass substrate 17. As it is, it can be used for various electronic devices. For example, as an insulating layer between the gate and the emitter, SiO ₂ , SiN,
The gate electrode layer is formed by a VD method, a sputtering method, an electron beam evaporation method, a printing method, or the like.
Using chromium, tungsten, etc., by electroless plating, electroplating, printing, sputtering, evaporation, etc.
It is formed on the SiO ₂ insulating layer including the convex region covered with the SiO ₂ layer, and thereafter, the CMP method, the CDE method, and the RIE
The gate may be opened by using a wet etching method, a wet etching method, or the like, and used as an emitter with a gate. Further, a plurality of large-area field emission cold cathodes obtained in the above embodiment may be arranged by a method such as tiling to further obtain a large-area field emission cold cathode.

(Fourth Embodiment) [4-1] FIGS. 4A to 4G are schematic views showing a manufacturing process of a field emission cold cathode according to an embodiment of the present invention. A method for manufacturing a field emission cold cathode in this embodiment will be described based on FIG.

First, a resist pillar 25 which will be a hole later is formed on a metal substrate or a glass substrate 26. FIG.
FIG. 3A is a vertical sectional view showing a state in which a resist pillar 25 is formed on a glass substrate 26. Thereafter, a hole is formed.

As a method for forming such a resist pillar, there is a method using electroplating (electroforming method) as described below. First, the Ni alloy substrate 2
(6) On both surfaces, a resist is applied by a spin coating method, a printing method, a spray coating method or the like. Next, patterning such as exposure and development is performed using an exposing machine to form resist pillars 25. In this embodiment, as shown in FIG. 4A, a resist pillar 25 having a diameter of 10 μm and a depth of about 12 μm is formed on a Ni substrate 26 on which an insulating layer is formed.

Next, a resist pillar 25 is formed by electroplating (electroforming method) using a material such as Ni.
Around a metal film layer or sheet layer 11 made of Ni or the like.
Is formed. This state is shown in FIG.

Next, by dissolving and removing the resist pillar 25 and the metal layer 26, the Ni film substrate 11 having the fine holes 12b is obtained. This state is shown in FIG.

Next, as shown in FIG. 4D, a thick Ni electroplating layer 13 'including the inside of the hole 12b is formed on the Ni substrate 11 to close the hole 12b, and then Ni oxidation is performed. Tier 1
3 and two sharp concave portions 12 are formed. In this embodiment, after forming the electroplating layer 13 ′ at 8 μm, it is further thermally oxidized so that the thermally oxidized layer 13 has a thickness of 1 μm.
Although the thermal oxidation layer 13 is formed by heat treatment in an oxygen atmosphere, the thermal oxidation layer may be formed in an air atmosphere or high-temperature high-pressure steam.

Next, as shown in FIG.
On the oxide layer 13, including a concave portion, a molten polycarbonate resin, an amorphous polyolefin resin, a thermoplastic resin such as a polymethyl methacrylate resin, an acrylic resin, an ultraviolet curable resin such as an epoxy resin, or an epoxy resin. At least one of a resin and a thermosetting resin such as a polymethyl methacrylate resin is filled by at least one of pressurization, ultraviolet irradiation, and normal pressure injection to form the resin layer 142.

At this time, the resin layer 142 may be used as a support substrate. For example, fine particles or ultrafine particles of Au, Pt, Ag, Cu, Mo, W or the like may be mixed, or the resin itself may have conductivity. Forming a core material resistance ballast layer,
It is desirable to form a cathode line layer 15 which also serves as a glass substrate and a bonding layer, and bond the glass substrate with the glass substrate. The conductive layer 15 also serving as the cathode line or the like may be formed on the glass support substrate 17 in advance. An example of a field emission electrode finally formed by this process is shown in FIG.

Then, the NiFe metal substrate and the NiFe alloy (amber) substrate 11 and the oxide layer or the electroplating layer 13 are removed with an etching solution such as hydrochloric acid to obtain a thick resin layer 142 including the sharp projections 18.

By repeatedly manufacturing in such a process, a large amount of a large-area convex resin can be obtained many times with good reproducibility. On the resin material layer 142, as the emitter material layer 14, for example, the molybdenum layer 14 including the projections 18 is formed by a sputtering method, an evaporation method, a printing method, an electroplating method, or the like. A field-emission cold cathode with high productivity can be obtained. This state is shown in FIG. At this time, the emitter layer may be formed and used as a cathode line, or the resin layer 142 may be formed of, for example, Au, Pt, Ag, Cu, Mo, W
When the resin layer 142 is used as a conductive layer or as a core material resistance layer by mixing fine particles such as ultra-fine particles, imparting conductivity to the resin itself, or carbonizing the resin layer. Alternatively, a cathode line may be formed on the back surface of the resin. When used as a core material resistance layer, it is desirable that a large number of emitters be electrically separated by etching or the like in order to enhance the resistance ballast effect.

As it is, it can be used for various electronic devices. For example, as an insulating layer between a gate and an emitter, SiO ₂ or SiN is formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. And
The gate electrode layer, for example, Ni, chromium, using tungsten, etc., electroless plating, electroplating, printing method, a sputtering method, an evaporation method, or the like, comprising a convex portion area covered SiO ₂ layer, SiO ₂ Formed on the insulating layer, and then C
A gate opening may be formed by using an MP method, a CDE method, an RIE method, a wet etching method, or the like, and the gate opening may be used as an emitter with a gate.

(Fifth Embodiment) [4-2] FIGS. 5A to 5G are schematic views showing a manufacturing process of a field emission cold cathode according to an embodiment of the present invention. A method for manufacturing a field emission cold cathode in this embodiment will be described based on FIG.

As another method of the electroforming method described in the fourth embodiment, there is a method called an additive method.

In the additive method, first, a resist is applied onto both surfaces of the glass substrate 26 by spin coating, printing,
It is applied by a spray coating method or the like. Next, using an exposure machine,
Patterning such as exposure and development is performed to form a resist pillar 25. In the present embodiment, as shown in FIG.
A resist column 25 having a diameter of 10 μm and a depth of about 12 μm is formed on a glass substrate 26 on which an insulating layer is formed.

Next, using a material such as Ni, the resist pillar 25 is formed by electroplating (electroforming method) or the like.
Around a metal film layer or sheet layer 11 made of Ni or the like.
Is formed. This state is shown in FIG.

Next, when the resist pillar 25 is dissolved and removed,
A Ni film substrate having fine recesses 12b is obtained. At this time, when a glass substrate is used as a base for the electroplating layer, it is not always necessary to remove the glass substrate. In this state, when a metal such as Ni is deposited on a concave portion 12b (not shown) formed by dissolving and removing the resist pillar 25 by electroplating or the like, a Ni layer grows and a thick film is formed from the periphery of the concave portion 12b to the center. As a result, a sharp conical concave portion is formed around the center of the concave portion 12b. This state is shown in FIG.
It is shown in (c).

Next, as shown in FIG. 4D, a thick Ni electroplating layer 13 'including the inside of the hole 12b is formed on the Ni substrate 11 to close the hole 12b, and then Ni oxidation is performed. Tier 1
3 to form a sharp concave portion 12b '.

In this embodiment, the electroplating layer 11 is
After the formation of μm, the substrate is further thermally oxidized to a thickness of 1 μm.
The thermal oxidation layer 13 is formed by heat treatment in an oxygen atmosphere so that the thermal oxidation layer may be formed in an air atmosphere or under high-temperature and high-pressure steam.

Next, as shown in FIG.
On the oxide layer 13, including a concave portion, a molten polycarbonate resin, an amorphous polyolefin resin, a thermoplastic resin such as a polymethyl methacrylate resin, an acrylic resin, an ultraviolet curable resin such as an epoxy resin, or an epoxy resin. At least one of a resin and a thermosetting resin such as a polymethyl methacrylate resin is filled by at least one of pressurization, ultraviolet irradiation, and normal pressure injection to form the resin layer 142.

At this time, the resin layer 142 may be used as a supporting substrate. For example, fine particles or ultrafine particles of Au, Pt, Ag, Cu, Mo, W or the like may be mixed, or the resin itself may have conductivity. Forming a core material resistance ballast layer,
It is desirable to form a cathode line layer 15 which also serves as a glass substrate and a bonding layer, and bond the glass substrate with the glass substrate. The conductive layer 15 also serving as the cathode line or the like may be formed on the glass support substrate 17 in advance. An example of a field emission electrode finally formed by this process is shown in FIG.

Next, the NiFe metal substrate and the NiFe alloy (amber) substrate 11 and the oxide layer or the electroplating layer 11 are removed with an etching solution such as hydrochloric acid to obtain a thick resin layer 142 including the sharp projections 18.

By repeatedly manufacturing in such a process, a large amount of large-area convex resin can be obtained many times with good reproducibility. On the resin material layer 142, as the emitter material layer 14, for example, the molybdenum layer 14 including the projections 18 is formed by a sputtering method, an evaporation method, a printing method, an electroplating method, or the like. A field-emission cold cathode with high productivity can be obtained. This state is shown in FIG. At this time, the emitter layer may be formed and used as a cathode line, or the resin layer 142 may be formed of, for example, Au, Pt, Ag, Cu, Mo, W
When the resin layer 142 is used as a conductive layer or as a core material resistance layer by mixing fine particles such as ultra-fine particles, imparting conductivity to the resin itself, or carbonizing the resin layer. Alternatively, a cathode line may be formed on the back surface of the resin. When used as a core material resistance layer, it is desirable that a large number of emitters be electrically separated by etching or the like in order to enhance the resistance ballast effect.

As it is, it can be used for various electronic devices. For example, as an insulating layer between a gate and an emitter, SiO ₂ or SiN is formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. And
The gate electrode layer, for example, Ni, chromium, using tungsten, etc., electroless plating, electroplating, printing method, a sputtering method, an evaporation method, or the like, comprising a convex portion area covered SiO ₂ layer, SiO ₂ Formed on the insulating layer, and then C
A gate opening may be formed by using an MP method, a CDE method, an RIE method, a wet etching method, or the like, and the gate opening may be used as an emitter with a gate.

(Sixth Embodiment) FIGS. 6A to 6F are schematic views showing a manufacturing process of a field emission type cold cathode according to an embodiment of the present invention. The manufacturing method of the field emission type cold cathode according to the embodiment will be described.

First, on the glass substrate 26, the conductive layer 25 which will later become the nucleus for the growth of the Ni plating layer is formed. FIG.
(A) is a vertical sectional view showing a state in which a conductive layer 25 is formed on a glass substrate 26 and a Ni layer is laminated thereon by electroplating or the like.

As such a method, first, the conductive layer 25 is formed on the surface of the Ni alloy substrate 26 by electroplating, electroless plating, or the like.

In this embodiment, as shown in FIG. 6A, a plurality of conductive layers 25 having a diameter of 10 μm and a depth of about 12 μm are formed on the glass substrate 26 or the like at predetermined intervals in an island shape. . At this time, the space between the adjacent conductive layers 25, 25,... Is sufficiently open, but the portion between them becomes the concave portion 12b later.

Next, the conductive layers 25, 2 are formed by electroplating (electroforming) using a material such as Ni.
Ni and the like are deposited around 5,... By plating or the like.

The Ni thus deposited forms a Ni layer 11. The Ni layer 11 is deposited and grown with the conductive layers 25, 25,. With the growth of the Ni layer 11, the space between the adjacent conductive layers 25 becomes narrower and narrower, and the concave portion 12b eventually forms a sharp concave portion 12b '. FIG. 6B shows this state.

Next, an oxidation treatment was performed to thermally oxidize the Ni layer to form a thermally oxidized layer 13 having a thickness of 1 μm.
FIG. 6C shows this state.

In this embodiment, the Ni thermal oxide layer 13
Was formed by heat treatment in an oxygen atmosphere, but a thermal oxide layer may be formed in an air atmosphere or under high-temperature and high-pressure steam.

Next, as shown in FIG.
On the oxide layer 13, including the concave portions 12 b ′, molten polycarbonate resin, amorphous polyolefin resin, thermoplastic resin such as polymethyl methacrylate resin, acrylic resin, ultraviolet curable resin such as epoxy resin, or At least one of a thermosetting resin such as an epoxy resin and a polymethyl methacrylate resin is filled by at least one of pressurization, ultraviolet irradiation, and normal pressure injection to form the resin layer 142.

At this time, the resin layer 142 may be used as a supporting substrate. For example, fine particles or ultrafine particles of Au, Pt, Ag, Cu, Mo, W or the like may be mixed, or the resin itself may have conductivity. Forming a core material resistance ballast layer,
It is desirable to form a cathode line layer 15 which also serves as a glass substrate and a bonding layer, and bond the glass substrate with the glass substrate. The conductive layer 15 also serving as a cathode line or the like may be formed on the glass support substrate 17 in advance. FIG. 6E shows an example of a field emission electrode finally formed by this process.

Next, the NiFe alloy (amber) substrate 11 and the oxide layer or the electroplating layer 13 are removed with a NiFe metal substrate and an etching solution such as hydrochloric acid to obtain a thick resin layer 142 including the sharp projections 18.

By repeatedly manufacturing with such a process, a large amount of a large-area convex resin can be obtained many times with good reproducibility. On the resin material layer 142, as the emitter material layer 14, for example, the molybdenum layer 14 including the projections 18 is formed by a sputtering method, an evaporation method, a printing method, an electroplating method, or the like. A field-emission cold cathode with high productivity can be obtained. This state is shown in FIG. At this time, the emitter layer may be formed and used as a cathode line, or the resin layer 142 may be formed of, for example, Au, Pt, Ag, Cu, Mo, W
When the resin layer 142 is used as a conductive layer or as a core material resistance layer by mixing fine particles such as ultra-fine particles, imparting conductivity to the resin itself, or carbonizing the resin layer. Alternatively, a cathode line may be formed on the back surface of the resin. When used as a core material resistance layer, it is desirable that a large number of emitters be electrically separated by etching or the like in order to enhance the resistance ballast effect.

As it is, it can be used for various electronic devices. For example, as an insulating layer between a gate and an emitter, SiO ₂ or SiN is formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. And
The gate electrode layer, for example, Ni, chromium, using tungsten, etc., electroless plating, electroplating, printing method, a sputtering method, an evaporation method, or the like, comprising a convex portion area covered SiO ₂ layer, SiO ₂ Formed on the insulating layer, and then C
A gate opening may be formed by using an MP method, a CDE method, an RIE method, a wet etching method, or the like, and the gate opening may be used as an emitter with a gate.

(Seventh Embodiment) FIGS. 9A to 9E are schematic diagrams showing a manufacturing process of a field emission cold cathode according to a seventh embodiment of the present invention. A method for manufacturing a field emission cold cathode according to this embodiment will be described.

First, a first concave portion having a sharp bottom is formed on one surface of a metal substrate 11 such as a metal film or a metal sheet. As a method for forming such a concave portion, there is a method utilizing etching of a Ni alloy substrate as described below.

That is, first, a resist is applied on the Ni substrate 11 by a spin coating method, a printing method, a spray coating method or the like. Next, using an exposure machine, patterns such as exposure and development
After performing the polishing, with a ferric chloride etching solution,
The Ni substrate is etched. After removing the resist, FIG.
As shown in (a), a concave portion 12 having a diameter of about 5 μm and a depth of about 3 μm is formed in a NiFe alloy (amber) substrate soil.

Next, the NiFe alloy (amber) substrate 11
A Ni oxide layer 13 including the inside of the concave portion 12 is formed thereon.
In this embodiment, Ni is applied so that the thickness becomes 0.4 μm.
Although the thermal oxide layer 13 is formed by heat treatment in an oxygen atmosphere, the thermal oxide layer may be formed in an air atmosphere or under high-temperature high-pressure steam. Further, it may be formed by using electroplating, for example, Ni plating, or may be formed by oxidizing the electroplated layer after forming the electroplated layer. Next, the metal substrate is plated with a Ni-plated electrolytic solution LE.
Soak in. Then, the metal substrate is used as a cathode electrode or a Ni electrode, for example, a depolarized N having a high dissolution efficiency.
Using the i-electrode as the anode electrode AE, a thick support material layer 21 made of Ni is formed on a metal substrate by electroplating.

Note that the support material layer 21 can be formed by a deposition technique such as CVD or sputtering instead of electroplating. This state is shown in FIG.

Next, as shown in FIG.
On the oxide layer 13, including a concave portion, a molten polycarbonate resin, an amorphous polyolefin resin, a thermoplastic resin such as a polymethyl methacrylate resin, an acrylic resin, an ultraviolet curable resin such as an epoxy resin, or an epoxy resin. At least one of a resin and a thermosetting resin such as a polymethyl methacrylate resin is filled by at least one of pressurization, ultraviolet irradiation, and normal pressure injection to form the resin layer 142.

Next, by separating the metal substrate 11 and the resin layer 142, a thick resin layer 142 including sharp projections is obtained. The metal substrate of the supporting material layer 21 is used as a master substrate, and thereafter, the above-described resin filling and separation from the master substrate make it possible to obtain a large amount of large-area convex resin many times with good reproducibility. I can do it. This state is shown in FIG.
(D).

Next, on the resin material layer 142, for example, a molybdenum layer including the projections 18 is formed as the emitter material layer 14 by sputtering, vapor deposition, printing, electroplating, or the like. A field emission cold cathode that is sharp and highly productive can be obtained. This state is shown in FIG. At this time, the emitter material layer 14 may be formed as a cathode line.
u, Pt, Ag, Cu, Mo, W and other fine particles and ultrafine particles are mixed therein, and the resin itself is made conductive,
By carbonizing the resin layer 142,
When the resin layer 142 is a conductive layer, a cathode line may be formed on the back surface of the resin. Further, this resin conductive layer may be used as a core material resistance ballast layer. further,
The resin conductive layer may be bonded to a glass substrate, or the cathode line may be formed on a glass support substrate in advance. In that case, in order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like.

As is, it can be used for various electronic devices. For example, as an insulating layer between a gate and an emitter, SiO ₂ or SiN is formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. And
The gate electrode layer is made of, for example, Ni, chromium, tungsten, or the like, by electroless plating, electroplating, printing, sputtering, vapor deposition, or the like, including the convex region covered with the SiO ₂ layer. ₍₂₎ After being formed on an insulating layer, a gate opening may be formed using a CMP method, a CDE method, an RIE method, a wet etching method, or the like, and the resultant structure may be used as a gated emitter. (Eighth Embodiment) FIGS.
(E) is a schematic diagram showing the manufacturing process of the field emission cold cathode according to the eighth embodiment of the present invention, and the method of manufacturing the field emission cold cathode in this example will be described with reference to FIG.

First, Ni. A first concave portion having a sharp bottom is formed on one surface of a metal substrate such as a metal film or a metal sheet having a large area such as a NiFe alloy (amber). That is, first, a resist is formed on a large-area substrate 11 made of a NiFe alloy (amber) by spin coating, printing, or the like.
It is applied by a spray coating method or the like. Next, using an exposure machine,
After patterning such as exposure and development, the NiFe alloy (amber) substrate is etched with a ferric chloride etching solution. After removing the resist, as shown in FIG. 10A, a concave portion 12 having a diameter of 9 μm and a depth of about 5 μm
It is formed on an Fe alloy (amber) substrate.

Next, as shown in FIG.
An NiFe oxide layer, usually an oxide layer 13 such as NixFe1-xO4, is formed on the e-alloy substrate 11 including the inside of the recess 12. In this embodiment, the NiFe thermal oxide layer 13 is formed by heat treatment in an oxygen atmosphere so as to have a thickness of 0.8 μm. However, the thermal oxide layer 13 is formed in an air atmosphere or under high-temperature and high-pressure steam. It may be formed.

Further, it may be formed by using electroplating, for example, Ni plating, or may be formed by oxidizing the electroplated layer after forming the electroplated layer. Further, a thick supporting substrate, for example, a thick Ni substrate is bonded to the bonding layer 23.
And a film-like NiFe alloy substrate through the above to form a backing support substrate.

Next, on the NiFe oxide layer 13, a thermoplastic resin such as a molten polycarbonate resin, an amorphous polyolefin resin, or a polymethyl methacrylate resin; an ultraviolet curable resin such as an acrylic resin or an epoxy resin; Epoxy resin, at least one of thermosetting resins such as polymethyl methacrylate resin, pressurized,
The resin layer 142 is formed by filling with at least one of ultraviolet light and normal pressure injection. At this time, for example, A
U, Pt, Ag, Cu, Mo, W and other fine particles and ultrafine particles are mixed in, or the resin itself is made conductive, a core material resistance ballast layer is formed, and the glass substrate and the bonding layer are also used. It is desirable to form the cathode line layer 15. The conductive layer 15 also serving as a cathode line or the like is used.
May be formed on the glass support substrate 17 in advance.

Next, as a supporting substrate serving as a second substrate,
A glass support substrate 17 is prepared, and the glass substrate 17 and the metal substrate 11 are bonded to each other with a resin material layer 142 interposed therebetween. As the bonding method, resin bonding, low melting point glass, water glass, SOG (so-called spin-on-glass) solution, electrostatic bonding, or the like may be used. This state is shown in FIG.

Next, by separating the NiFe metal substrate and the glass supporting substrate on which the resin layer is formed, a thick resin layer 142 including the sharp projections 18 is obtained. The metal substrate provided with the backing support material layer is used as a master substrate, and thereafter, the resin filling and the separation from the master substrate are performed repeatedly, with good reproducibility, and a large number of large-area convex resins are obtained. I can do it. This state is shown in FIG.

Next, on the resin material layer 142, for example, a molybdenum layer is formed as the emitter material layer 14, including the projections 18, by sputtering, vapor deposition, printing, electroplating, or the like. A field emission cold cathode that is sharp and highly productive can be obtained. This state is shown in FIG.
At this time, this emitter layer may be formed as a cathode line, or Au, Pt, A
g, Cu, Mo, W, or other fine particles or ultrafine particles, by adding conductivity to the resin itself, or by carbonizing the resin layer to make the resin layer a conductive layer, When used as a resistance layer, a cathode line may be formed on the back surface of the resin.

When used as a core material resistance layer,
In order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like. As it is, it can be used for various electronic devices.
iO ₂ , SiN, etc. are formed by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, and the like. Further, the gate electrode layer is formed by electroless plating, electroplating using, for example, Ni, chromium, tungsten, or the like. Formed on the SiO ₂ insulating layer by using a printing method, a sputtering method, a vapor deposition method, etc., including the convex region covered with the SiO ₂ layer,
The gate opening may be formed by using a method, CDE method, RIE method, wet etching method, or the like to use as an emitter with a gate.

Further, a plurality of large-area field emission cold cathodes obtained in the above embodiments may be arranged by a method such as tiling to further obtain a large-area field emission cold cathode.

(Ninth Embodiment) FIGS. 11A to 11H
FIG. 14 is a schematic diagram showing a manufacturing process of a field emission cold cathode according to a ninth embodiment of the present invention, and a method of manufacturing a field emission cold cathode in this embodiment will be described with reference to FIG.

First, a first concave portion having a sharp bottom is formed on one surface of a metal substrate such as a metal film or a metal sheet. As a method for forming such a concave portion, there is a method utilizing etching of a Ni alloy substrate as described below. That is, first, a resist is applied onto the substrate 11 made of a NiFe alloy (amber) by a spin coating method, a printing method, a spray coating method, or the like.

Next, after performing patterning such as exposure and development using an exposure machine, the NiFe alloy (amber) substrate is etched with a ferric chloride etching solution. After removing the resist, as shown in FIG. 11A, a concave portion 12 having a diameter of about 5 μm and a depth of about 3 μm is formed on the NiFe alloy (amber) substrate.

Next, as shown in FIG.
N on the e-alloy (amber) substrate 11 including the inside of the concave portion 12
An iFe oxide layer, typically an oxide layer 13, such as NixFe1-xO4, is formed. In this embodiment, the NiFe thermal oxide layer 13 is formed by heat treatment in an oxygen atmosphere so as to have a thickness of 0.4 μm. May be formed. Further, it may be formed by using electroplating, for example, Ni plating, or may be formed by oxidizing the electroplated layer after forming the electroplated layer.

Next, a molybdenum layer, for example, including the inner surface of the concave portion 14 is formed as the emitter material layer 14 on the NiFe oxide layer 13 by sputtering, vapor deposition, printing, electroplating or the like. Further, a conductive layer 15 also serving as a bonding layer with the cathode line layer or the support substrate 17 is formed on the emitter material layer. The conductive layer 15 also serving as a cathode line or the like is previously formed on the support substrate 17.
It may be formed above. The conductive layer 15 can be omitted depending on the material of the emitter material layer 14. In this case, the emitter material layer also serves as the cathode electrode layer. This state is shown in FIG. Although omitted in the present embodiment, a core material resistance layer such as Si or cermet having a resistance ballast effect may be formed next to the emitter layer. In this case, in order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like.

Next, as a supporting substrate serving as a second substrate,
A glass substrate 17 is prepared, and as shown in FIG. 11C, the glass substrate 17 and the metal substrate 11 are combined with the emitter material layer 14.
Glue through.

As the bonding method, an adhesive or the like may be used, but in the present embodiment, the Al layer 16 was coated on the back surface of the glass substrate and bonded by the electrostatic bonding method.

Next, the Al layer 16 on the back of the glass substrate 17
Is removed with a mixed acid solution such as HNO ₃ and HF, and the NiFe alloy (amber) substrate 11 is etched with an etching solution such as hydrochloric acid.
Then, the oxide layer 13 is removed, and the projection 18 made of an emitter material such as molybdenum is projected. The projection 18 is made of Ni
This corresponds to the emitter material filled in the recess 12 of the Fe alloy (amber) substrate 11.

Next, as shown in FIG. 11E, SiO ₂ or Si serving as an electrical insulating layer between the gate layer and the emitter is used.
N is formed on the emitter layer or the glass substrate by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. Although the thermal oxide layer 13 is removed in this embodiment, the thermal oxide layer 13 may be used as an electrical insulating layer, or may be used in combination with a newly formed electrical insulating layer 19.

Next, as the gate electrode layer 20, for example, N
Electroless plating using i, chromium, tungsten, etc.
Electroplating, printing method, a sputtering method, an evaporation method, or the like, includes a region of the convex portion 18 covered with the SiO ₂ layer 19 is formed on the SiO ₂ insulating layer 19. In this embodiment, the Ni layer is formed by a combination of the electroless plating method and the electroplating method so as to have a thickness of about 1 μm. This state is shown in FIG.

Next, the gate electrode layer 20 and the insulating layer 19
Is etched by a CMP (Chemical Mechanical Polishing) method or the like to such an extent that the tip of the emitter projection is not destroyed.

FIG. 11G shows this state.

Next, using an NH ₄ F—HF mixed solution,
The SiO ₂ insulating layer 19 around the tip 18 a of the projection 18 is selectively removed by etching. As a result, FIG.
As shown in (h), the opening 19b of the gate electrode layer 20 is formed.
Is formed, and the tip 18a of the pyramid-shaped projection 18 made of the emitter material is exposed to form a sharp gated emitter, that is, a field emission cold cathode.

In the above embodiment, a so-called gate opening process is performed by using the CMP method. However, a photoresist is applied on the gate electrode layer 20, and dry etching is performed by oxygen plasma to obtain Is slightly appeared, the gate electrode layer 20 on the convex portion 18 is removed by wet etching, reactive ion etching (RIE), etc., and further, a photoresist layer and an NH ₄ F.HF mixed solution. The gate opening may be formed by selectively removing the SiO ₂ insulating layer 19 using the method described above.

(Tenth Embodiment) FIGS.
(H) is a schematic diagram showing a manufacturing process of a field emission cold cathode according to a tenth embodiment of the present invention, and a method of manufacturing a field emission cold cathode in this embodiment will be described with reference to the figure.

First, Ni. A first concave portion having a sharp bottom is formed on one surface of a metal substrate such as a metal film or a metal sheet having a large area such as a NiFe alloy (amber). That is, first, a resist is applied on the large-area substrate 11 made of Ni by a spin coating method, a printing method, a spray coating method, or the like. Next, using an exposure machine, after performing patterning such as exposure, development, etc., with a ferric chloride etching solution,
The Ni substrate is etched. After removing the resist,
As shown in FIG. 2A, a recess 12 having a diameter of 9 μm and a depth of about 5 μm is formed on a Ni substrate.

Next, as shown in FIG. 12B, a Ni oxide layer and an oxide layer 13
To form In this embodiment, the thickness O.D. Although the Ni thermal oxide layer 13 is formed by heat treatment in an oxygen atmosphere so as to have a thickness of 8 μm, the thermal oxide layer may be formed in an air atmosphere or high-temperature and high-pressure steam. Also electroplating,
For example, it may be formed using Ni plating or the like, or may be formed by oxidizing the electroplated layer after forming the electroplated layer.

Next, on the Ni oxide layer 13, a molten polycarbonate resin, an amorphous polyolefin resin,
Add at least one of a thermoplastic resin such as polymethyl methacrylate resin, an ultraviolet curable resin such as acrylic resin and epoxy resin, or a thermosetting resin such as epoxy resin and polymethyl methacrylate resin. The resin layer 142 is formed by filling with at least one of pressure, ultraviolet light, and normal pressure injection. At this time, for example, Au,
Cathode line that mixes fine particles and ultrafine particles of Pt, Ag, Cu, Mo, W, etc., or makes the above resin itself conductive, forms a core material resistance ballast layer, and also serves as a glass substrate and a bonding layer It is desirable to form layer 15. The conductive layer 15 also serving as a cathode line or the like may be formed on the support substrate 17 in advance. Further, in order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like. This state is shown in FIG.

Next, as a supporting substrate serving as a second substrate,
A glass substrate 17 is prepared, and the glass substrate 17 and the metal substrate 11 are combined with the emitter material layer 14 as shown in FIG.
Glue through.

As the bonding method, an adhesive or the like may be used, but in this embodiment, the back surface of the glass substrate was coated with the Al layer 16 and contact was made by the electrostatic bonding method.

Next, the Al layer 16 on the back of the glass substrate 17
Is removed with a mixed acid solution such as HNO ₃ and HF, and then the Ni substrate 11 and the oxide layer 13 are removed with an etching solution such as hydrochloric acid, so that the convex portions 18 made of resin or the like are projected. The convex portion 18 is provided in the concave portion 1 of the NiFe alloy (amber) substrate 11.
This corresponds to the examination of the resin material filled in 2. On this resin material layer, for example, a molybdenum layer as an emitter material layer 14 including the inner surface of the concave portion 14 by a sputtering method,
It is formed by a vapor deposition method, a printing method, an electroplating method, or the like. In this case, in order to enhance the resistance ballast effect, it is desirable that a large number of emitters be electrically separated by etching or the like. This state is shown in FIG.

Next, as shown in FIG. 12E, SiO ₂ or SiN to be an electrically insulating layer between the gate layer and the emitter is used.
Such as CVD method, sputtering method, electron beam evaporation method,
It is formed on an emitter layer or a glass substrate by a printing method or the like.
Although the thermal oxide layer 13 is removed in the present embodiment, the thermal oxide layer 13 may be used as an electrical insulating layer, or may be used in combination with a newly formed electrical insulating layer 19.

Next, for the gate electrode layer 20, for example, N
Electroless plating using i, chromium, tungsten, etc.
Electroplating, printing method, a sputtering method, an evaporation method, or the like, includes a region of the convex portion 18 covered with the SiO ₂ layer 19 is formed on the SiO ₂ insulating layer 19. In this embodiment, a Ni layer is formed by a combination of an electroless plating method and an electroplating method so as to have a thickness of about 1 μm. This state is shown in FIG.

Next, the gate electrode layer 20 and the green layer 19
Is etched by a CMP (Chemical Mechanical Polishing) method or the like to such an extent that the tip of the emitter projection is not destroyed.

This state is shown in FIG.

Next, using a mixed solution of NH ₄ F and HF,
The SiO2 insulating layer 19 around the tip 18a of the projection 18 is selectively removed by etching. As a result, FIG.
As shown in (h), the opening 19b of the gate electrode layer 20 is formed.
Is formed, and the tip 18a of the pyramid-shaped projection 18 made of the emitter material is exposed to form a sharp gated emitter, that is, a field emission cold cathode.

In the above embodiment, the so-called gate opening process is performed by using the CMP method. However, a photoresist is applied on the gate electrode layer 20 and dry etching is performed by oxygen plasma, and the tip of the convex portion is formed. After making it slightly appear, the gut electrode layer 20 on the convex portion 18 is removed by wet etching, reactive ion etching (RIE), and the like, and further, a photoresist layer and a mixed solution of NH ₄ F.HF. The gate opening may be formed by selectively removing the SiO ₂ insulating layer 19 using the method described above.

A plurality of large-area field emission cold cathodes obtained in the above embodiment may be arranged by a method such as tiling to obtain a large-area field emission cold cathode.

As described above, the field emission type cold cathode according to the embodiment of the present invention has holes and recesses formed on a metal substrate having a large area as compared with the conventional field emission type cold cathode. After that, a SiO ₂ thermal oxidation layer or an electroplating layer is formed on the inner surface of the concave portion, and a substance serving as an emitter is filled in the concave portion, or the resin is filled in the concave portion, and then formed on the convex resin. To form an emitter layer.

Therefore, a large number of emitters can be obtained with a large area corresponding to the shape of the concave portion with good reproducibility.

The concave portion can be formed into a convex shape with a sharply bottomed bottom due to the shape reproducibility by etching and the growth effect of the SiO ₂ thermal oxide layer and the electroplated layer in the concave portion. It is possible to stably obtain an emitter having a sharp and sharp portion and excellent uniformity in height.

Further, the emitter material is not limited to tungsten, Si and the like, and various materials having a low work function can be used.

Such a field emission cold cathode has greatly improved field emission efficiency and uniformity, and is suitable for a large-area and large-sized electronic device, for example, a large flat panel display.

[0195]

As described above, according to the present invention, a recess is formed in a metal substrate soil having a large area as compared with a conventional field emission cold cathode, and then a SiO ₂ thermal oxidation is performed. A layer or an electroplating layer is formed on the inner surface of the concave portion, and a thick supporting material substrate layer is formed on the back surface of the metal substrate by means of electroplating or lining, and then a material serving as an emitter is filled into the concave portion to form the substrate. After the resin is filled in the concave portions, the emitter layer is formed on the convex resin. Since the metal substrate having the concave portions and the supporting material substrate can be used as a mold and a master substrate, a large number of emitters having a large area corresponding to the shape of the concave portions can be obtained with good reproducibility. And, this concave part has shape reproducibility by etching,
And the growth of the SiO ₂ thermal oxidation layer and the electroplating layer into the recesses can form a convex shape with a well-pointed bottom, so that the tip is sharp and sharp, and the height uniformity is excellent. It is possible to obtain a stable emitter.

Further, the emitter material is not limited to tungsten, Si and the like, and various materials having a low work function can be used. Therefore, it is possible to mass-produce, at low cost, and at the same time, to improve the field emission efficiency and its uniformity and reproducibility, to provide a large-area, high-performance field emission cold cathode with good reproducibility. Becomes possible.

Further, a metal substrate having a large area which can be obtained at a low cost is used as a mold, and at least one of a thermoplastic resin, an ultraviolet curable resin, and a thermosetting resin in which the emitter is melted is used. Using, pressurizing,
By including at least one of ultraviolet and atmospheric pressure injection in the process, sharp and uniform large-area field-emission cold cathodes can be manufactured in large quantities at low cost.

Such a field emission cold cathode has greatly improved the field emission effect and its uniformity, and at the same time, has improved the reproducibility and uniformity, and has significantly reduced the production cost by improving the mass productivity. This is suitable for a large-sized and large-sized electronic device, for example, a large-sized flat panel display.

That is, according to the present invention, a sharp concave portion is formed on the metal substrate, and the concave portion is used as a mold. Therefore, a field emission type cold cathode having a sharp shape can be efficiently manufactured in a short time.

According to the present invention, a sharp recess is formed by applying a metal layer to the recess formed on the metal substrate, and the recess is used as a mold.

Even if the shape and the size of the concave portion of the metal substrate vary, the sharp concave portion becomes more uniform in shape and size between the sharp concave portions. For this reason, a field-emission cold cathode formed by using this sharp concave part as a mold and filling it with an emitter material can be uniform in shape and size, and can have a high field emission uniformity. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to the third aspect of the present invention, a sharp recess is formed by oxidizing the inner surface of the hole formed on the metal substrate to form a metal oxide layer, and the recess is used as a mold. .

Even if the shape and size of the recesses of the metal substrate vary, the shape and size of the recesses are very uniform. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to the present invention, a sharp concave portion is formed by applying a metal layer to the inner surface of the through hole formed on the metal substrate, and this concave portion is used as a mold. Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, use this recess as a mold,
A field emission cold cathode formed by filling the material with an emitter material and a resin can also be uniform in shape and size, and can have high uniform field emission.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, two sharp sharp concave portions are simultaneously formed from both sides of the through hole using the through hole formed on the metal substrate, so that the production efficiency is high. Further, since the through-holes are easily uniform in shape, variations in the shape and size of the sharp concave portion and, consequently, the field emission cold cathode are reduced.

According to the present invention, the inner surface of the through-hole formed on the metal substrate is oxidized to form a metal oxide layer to form a sharp concave portion, and the concave portion is used as a mold. I do. Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Furthermore, in this manufacturing method, two sharp recesses are simultaneously formed from both sides of the through hole using the through hole formed on the metal substrate, so that the production efficiency is high.

According to the sixth aspect of the present invention, a fourth aspect is provided.
Or, in the method of manufacturing a field emission cold cathode according to 5, since a cylindrical tubular thing is adopted as the through-hole, the shape of the through-hole is easy to be uniform, a sharp concave portion, and thus the shape of the field emission cold cathode. Variations in size are reduced.

According to the seventh aspect of the present invention, a fourth aspect is provided.
Or, in the method for manufacturing a field emission cold cathode according to 5, the radius of the through hole is large at the surface of the metal substrate and reduced near the center in the thickness direction of the metal substrate. A field emission cold cathode having high sharpness and thus a high emitter height can be obtained.

According to the present invention, a sharp concave portion is formed by applying a metal layer to the inner surface of the hole formed on the metal substrate, and the concave portion is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, since the resin layer supporting the emitter material thin film is formed, the field emission cold cathode with high productivity, low cost and large area can be obtained.

According to the ninth aspect of the present invention, a sharp concave portion is formed by oxidizing the inner surface of the hole formed on the metal substrate to form a metal oxide layer, and the concave portion is used as a mold. .

Even if the shape and size of the recesses in the metal substrate vary, the shapes and sizes of the recesses are very uniform between the recesses. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, since the resin layer supporting the emitter material thin film is formed, a high-productivity, low-cost, large-area field emission cold cathode can be obtained.

According to the tenth aspect of the present invention, a first metal layer having a through hole is formed on the substrate, and a sharp concave portion is formed by applying the metal layer to an inner surface of the through hole. This recess is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been transferred can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to the eleventh aspect of the present invention, a first metal layer having a through hole is formed on the substrate, and a metal oxide layer is formed by oxidizing an inner surface of the through hole. A sharp recess is formed, and this recess is used as a mold.
Even if the shape and size of the through-hole of the metal substrate vary, the shape and size of the recess are very uniform between the recesses. Therefore, a field emission cold cathode formed by using the concave portion as a mold and filling it with an emitter material can be uniform in shape and size, and a highly uniform field emission can be obtained.

Further, the shape of the concave portion is very sharp. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

According to a twelfth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the tenth or eleventh aspect, the through hole has a larger radius on the opening side and a smaller radius on the substrate side. Therefore, a field emission cold cathode having a high sharpness of the concave portion and a high emitter height can be obtained.

According to the thirteenth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the twelfth aspect, the through hole having a straight or curved cross section is employed. A field emission cold cathode having higher sharpness and thus higher emitter height is obtained.

According to the present invention, a sharp recess is formed by applying a metal layer to the inner surface of the hole formed on the metal substrate, and the recess is used as a mold. The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, this concave part is used as a mold, and the field emission type cold cathode formed by filling it with the emitter material and resin can also be uniform in shape and size, and high in field emission uniformity can be obtained. Can be

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, an insulating layer and a gate electrode layer are formed on the emitter material layer, and a part of the insulating layer and the gate electrode layer is removed. And can be manufactured at once, so that productivity is very high.

According to the fifteenth aspect of the present invention, a sharp recess is formed by oxidizing the inner surface of the hole formed on the metal substrate to form a metal oxide layer, and the recess is used as a mold. . The recesses have very uniform shapes and sizes between the recesses even if the shapes and sizes of the holes in the metal substrate vary. Therefore, using this concave part as a mold, the field emission type cold cathode formed by filling it with the emitter material and resin can be uniform in shape and size,
A high field emission uniformity can be obtained.

Further, since the concave portion has a very sharp shape, the field emission type cold cathode from which this formation has been removed can also have a very sharp shape. Therefore, a field emission cold cathode having high field emission efficiency can be obtained.

Further, in this manufacturing method, an insulating layer and a gate electrode layer are formed on the emitter material layer, and a part of the insulating layer and the gate electrode layer is removed. And can be manufactured at once, so that productivity is very high.

According to a sixteenth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to any one of the first to fifth, tenth, eleventh, fourteenth, and fifteenth aspects, the emitter material layer is formed. Thereafter, since the support layer is further joined to the emitter material layer, the emitter material layer is reinforced, so that the area can be increased, and the productivity and uniformity can be improved.

According to a seventeenth aspect of the present invention, in the method for manufacturing a field emission cold cathode according to the eighth or ninth aspect, after forming the resin layer, further joining a support layer on the resin layer. Since the emitter material thin film layer and the resin layer are reinforced, the area can be increased, and the productivity and uniformity can be improved.

According to the eighteenth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to any one of the first to third, eighth, ninth, fourteenth, and fifteenth aspects, the surface where the hole is formed is provided. A reinforcing layer is formed on the surface of the metal substrate opposite to the above. Therefore, the metal substrate is reinforced, so that the area of the metal substrate can be increased, and productivity and uniformity can be improved.

According to the nineteenth aspect of the present invention, in the method for manufacturing a field emission cold cathode according to the first to eighteenth aspects,
Ni or Ni having a small coefficient of thermal expansion is used as the metal substrate.
Since an alloy is used, a metal substrate having a large area can be used, resulting in an improvement in productivity and a reduction in the manufacturing cost of the field emission cold cathode.

According to the twentieth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the nineteenth aspect, Ni or a Ni alloy having a small coefficient of thermal expansion is employed as the Ni alloy. As a result of using a metal substrate having a large area, productivity is improved, and the manufacturing cost of a field emission cold cathode can be reduced.

According to the twenty-first aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the second, fourth, eighth, tenth, and fourteenth aspects, plating is employed as the recess forming step, so that the metal substrate is formed. The sharp recess formed when the metal layer or the metal oxide layer is formed on the inner surface of the hole has a uniform shape and a sharp point.

According to a twenty-second aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the first, third, fifth, ninth, eleventh, and fifteenth aspects, oxidation or thermal oxidation is performed as the recess forming step. Since it is adopted, the sharp concave portion formed when the metal layer or the metal oxide layer is formed on the inner surface of the hole of the metal substrate has a uniform shape and a sharp point.

According to the twenty-third aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the first to twenty-second aspects,
Since the core layer is further formed after forming the emitter layer, the mechanical strength and electric strength of the emitter layer are improved,
A highly durable field emission cold cathode can be obtained.

According to the twenty-fourth aspect of the present invention, in the method for manufacturing a field emission cold cathode according to the twenty-third aspect, the core material layer that functions as a resistance ballast is employed. As a result, it is possible to prevent an excessive voltage from being applied to the electrode, thereby improving the reliability and durability of the field emission cold cathode.

According to the twenty-fifth aspect of the present invention, in the method for manufacturing a field emission type cold cathode according to the first to twenty-fourth aspects, since the dissolving treatment is employed as the removing step, a sharp recess formed once is formed. Can be obtained quickly without damaging the cathode, and a uniform cathode can be manufactured with high productivity.

According to the twenty-sixth aspect of the present invention, in the method of manufacturing a field emission cold cathode according to the first to twenty-fifth aspects,
Since a metal sheet or a metal film is employed as the metal substrate, a large-area field emission cold cathode can be obtained.
As a result, productivity is improved and manufacturing costs can be kept low.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to an embodiment of the present invention and a field emission cold cathode according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 7 is a view showing a state in which a plurality of resist pillars are formed on a glass substrate.

FIG. 8 is a view showing a state in which a square pillar type resist pillar is formed on a glass substrate.

FIG. 9 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a manufacturing process of a field emission cold cathode according to another embodiment of the present invention and a field emission cold cathode according to another embodiment of the present invention.

FIG. 13 is a diagram showing a manufacturing process of a conventional field emission cold cathode.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Metal substrate 12b Hole 12 Depression 13 Thermal oxide metal layer or electroplating layer 14 Emitter material layer 142 Resin layer 15 Conductive layer (cathode line, bonding layer) 17 Glass substrate 18 Convex part 21 Supporting material substrate 22 Backing supporting substrate 23 Bonding layer 25 resist pillar 26 substrate

Claims (26)

[Claims] A step of forming a sharp recess on the metal substrate; a step of filling the recess with an emitter material to form an emitter material layer on the metal substrate; and a step of separating the metal substrate. A method for manufacturing a field emission cold cathode, comprising: 2. A step of forming a recess on a metal substrate, a step of forming a metal layer on an inner surface of the recess to form a sharp recess, and filling the sharp recess with an emitter material. A method for manufacturing a field emission cold cathode, comprising: forming an emitter material layer on a metal substrate; and separating the metal substrate. 3. A step of forming a hole on a metal substrate, a step of oxidizing an inner surface of the hole to form a metal oxide layer and forming a sharp recess, and an emitter material in the sharp recess. A step of forming an emitter material layer on the metal substrate by filling the metal substrate, and a removing step of removing the metal substrate. 4. A step of forming a through-hole on a metal substrate, a step of forming a metal layer on an inner surface of the through-hole to form a sharp concave portion, and filling the sharp concave portion with an emitter material. A method for manufacturing a field emission cold cathode, comprising: a step of forming an emitter material layer on a metal substrate; and a removing step of removing the metal substrate. 5. A step of forming a through hole on a metal substrate; a step of oxidizing an inner surface of the through hole to form a metal oxide layer to form a sharp recess; and forming an emitter material in the sharp recess. And forming an emitter material layer on the metal substrate by filling the metal substrate, and a removing step of removing the metal substrate. 6. The method for manufacturing a field emission cold cathode according to claim 4, wherein the through-hole has a cylindrical shape. 7. The method for manufacturing a field emission cold cathode according to claim 4, wherein a radius of the through hole is large on a surface of the metal substrate and small near a center of the metal substrate in a thickness direction. A method for manufacturing a field emission cold cathode, comprising: 8. A step of forming a hole on a metal substrate, a step of forming a metal layer on the inner surface of the hole to form a sharp recess, and supplying an emitter material to the surface of the sharp recess to form the metal. Forming an emitter material layer on a substrate, filling a resin on the emitter material layer to form a resin layer supporting the emitter material layer, and removing the metal substrate. A method for manufacturing a field emission cold cathode, comprising: 9. A step of forming a hole on a metal substrate; a step of oxidizing an inner surface of the hole to form a metal oxide layer to form a sharp recess; and forming an emitter material on the surface of the sharp recess. Supplying and forming an emitter material layer on the metal substrate; filling the resin on the emitter material layer to form a resin layer supporting the emitter material layer; and removing the metal substrate. And a method of manufacturing a field emission cold cathode. 10. A step of forming a first metal layer having a through hole on a substrate; a step of forming a second metal layer on an inner surface of the through hole to form a sharp recess; Forming an emitter material layer by filling an emitter material in a concave portion; and removing the first metal layer and the second metal layer. Manufacturing method. 11. A step of forming a metal layer having a through hole on a substrate; a step of oxidizing an inner surface of the through hole to form a metal oxide layer to form a sharp recess; A method for manufacturing a field emission cold cathode, comprising: a step of forming an emitter material layer by filling a recess with an emitter material; and a removing step of removing the metal layer and the metal oxide layer. 12. The method of manufacturing a field emission cold cathode according to claim 10, wherein the radius of the through hole is larger on the opening side and smaller on the substrate side. Manufacturing method of emission cold cathode. 13. The method for manufacturing a field emission cold cathode according to claim 12, wherein the through-hole has a straight or curved cross section. 14. A step of forming a hole on a metal substrate, a step of forming a metal layer on an inner surface of the hole to form a sharp recess, and filling the sharp recess with an emitter material to form the metal substrate. Forming an emitter material layer thereon; removing the metal substrate; forming an insulating layer on the emitter material layer; forming a gate electrode layer on the insulating layer; Removing a part of the insulating layer and the gate electrode layer;
A method for manufacturing a field emission cold cathode, comprising: 15. A step of forming a hole on a metal substrate, a step of oxidizing an inner surface of the hole to form a metal oxide layer and forming a sharp recess, and filling the sharp recess with an emitter material. Forming an emitter material layer on the metal substrate, removing the metal substrate, forming an insulating layer on the emitter material layer, forming a gate electrode layer on the insulating layer And removing a part of the insulating layer and the gate electrode layer. A method of manufacturing a field emission cold cathode, comprising: 16. The method according to claim 1, wherein:
5. The method for manufacturing a field emission cold cathode according to any one of items 5, further comprising, after forming the emitter material layer, further bonding a support layer on the emitter material layer. A method for manufacturing a field emission cold cathode. 17. The method for manufacturing a field emission cold cathode according to claim 8, further comprising a step of, after forming the resin layer, further bonding a support layer on the resin layer. A method for manufacturing a field emission cold cathode, which is characterized by the following. 18. The method of manufacturing a field emission cold cathode according to claim 1, wherein a surface opposite to the surface on which the concave portion is formed is reinforced. A method for producing a field emission cold cathode, further comprising a step of forming a layer. 19. The method for manufacturing a field emission cold cathode according to claim 1, wherein the metal substrate is made of Ni or Ni.
A method for producing a field emission cold cathode, which is an alloy. 20. The method for manufacturing a field emission cold cathode according to claim 19, wherein the Ni alloy is an Fe—Ni alloy or NiCo. 21. The method for manufacturing a field emission cold cathode according to claim 2, wherein the step of forming the concave portion is performed by plating, oxidation, or thermal oxidation. Manufacturing method of emission cold cathode. 22. The method of manufacturing a field emission cold cathode according to claim 1, wherein the step of forming the concave portion is performed by plating, oxidation, or thermal oxidation. Of manufacturing a field emission cold cathode. 23. The method of manufacturing a field emission cold cathode according to claim 1, further comprising a step of forming a core layer after forming the emitter layer. Manufacturing method of cold cathode. 24. The method for manufacturing a field emission cold cathode according to claim 23, wherein the core material layer functions as a resistance ballast. 25. The method of manufacturing a field emission cold cathode according to claim 1, wherein the removing step is performed by a dissolution treatment. 26. The method for manufacturing a field emission cold cathode according to claim 1, wherein the metal substrate is a metal sheet or a metal film.