JPH11258206A - Method and device for evaluating photocatalyst - Google Patents
Method and device for evaluating photocatalystInfo
- Publication number
- JPH11258206A JPH11258206A JP10065509A JP6550998A JPH11258206A JP H11258206 A JPH11258206 A JP H11258206A JP 10065509 A JP10065509 A JP 10065509A JP 6550998 A JP6550998 A JP 6550998A JP H11258206 A JPH11258206 A JP H11258206A
- Authority
- JP
- Japan
- Prior art keywords
- surface potential
- photocatalytic film
- light irradiation
- evaluating
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 230000001699 photocatalysis Effects 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000011156 evaluation Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 238000000354 decomposition reaction Methods 0.000 description 8
- UFBJCMHMOXMLKC-UHFFFAOYSA-N 2,4-dinitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O UFBJCMHMOXMLKC-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003980 solgel method Methods 0.000 description 6
- 238000007664 blowing Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DQFYEOSNKPKZBH-UHFFFAOYSA-N OO.[O-2].[O-2].[Ti+4] Chemical compound OO.[O-2].[O-2].[Ti+4] DQFYEOSNKPKZBH-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Catalysts (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光触媒膜の能力の評価方
法および評価装置および評価用に用いられる光触媒体に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for evaluating the performance of a photocatalytic film and a photocatalyst used for the evaluation.
【０００２】[0002]
【従来の技術】光触媒膜の能力を評価する方法として
は、膜自体を反応対象物質が存在する実験系に置き、光
を照射しながら、反応対象物質の濃度変化を調べる必要
があった。2. Description of the Related Art As a method for evaluating the performance of a photocatalytic film, it is necessary to place the film itself in an experimental system in which a substance to be reacted is present, and to examine a change in the concentration of the substance to be reacted while irradiating light.
【０００３】[0003]
【発明が解決しようとする課題】しかし、反応対象物質
が有害であったり、光触媒膜の製造行程上での品質管理
においては、様々な形状のものがあり、すべてに関して
膜自体を反応対象物質が存在する実験系に置き、光照射
による反応対象物質の濃度変化を調べることは困難であ
る。また、反応対象物と反応させ、その濃度変化を調べ
るためには、試験に長時間を費やしていた。本発明は、
従来の技術の欠点を克服し、光触媒膜の能力を簡便に短
時間で評価する技術を提供することである。However, in the quality control of the photocatalytic film in the production process, there are various shapes, and in all cases, the film itself is formed by the reaction target material. It is difficult to examine the change in the concentration of the target substance due to light irradiation in an existing experimental system. In addition, a long time was spent on the test in order to react with a reaction target and examine a change in the concentration. The present invention
An object of the present invention is to provide a technique for overcoming the drawbacks of the conventional technique and for easily and quickly evaluating the performance of a photocatalytic film.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、鋭意検討
の結果、光照射とともに変化する表面電位を測定するこ
とによって、本発明を見い出すに至った。 （１）光触媒膜の能力を評価する方法において、光照射
とともに変化する表面電位を測定することによって、そ
の能力を評価することを特徴とする光触媒膜の能力の評
価方法。 （２）測定雰囲気を不活性ガス雰囲気と酸素および水蒸
気存在雰囲気とで測定した表面電位の変化を比較するこ
とにより、その能力を評価することを特徴とする前記
（１）の光触媒膜の能力の評価方法。Means for Solving the Problems As a result of intensive studies, the present inventors have found the present invention by measuring a surface potential that changes with light irradiation. (1) A method for evaluating the ability of a photocatalytic film, wherein the ability is evaluated by measuring a surface potential that changes with light irradiation. (2) The ability of the photocatalytic film of (1) is evaluated by comparing changes in surface potential measured in an inert gas atmosphere and an atmosphere containing oxygen and water vapor as the measurement atmosphere. Evaluation methods.
【０００５】（３）測定雰囲気を不活性ガス雰囲気と反
応対象化合物存在雰囲気とで測定した表面電位の変化を
比較することにより、その能力を評価することを特徴と
する前記（１）の光触媒膜の能力の評価方法。 （４）光照射用光源と表面電位測定器からなることを特
徴とする光触媒膜の能力の評価装置。 （５）光照射用光源と表面電位測定器とガス雰囲気を制
御できる容器あるいはガス噴出ノズルを備えていること
を特徴とする前記（４）の光触媒膜の能力の評価装置。 （６）前記（１）の光触媒膜の能力の評価方法に用いる
ため、あらかじめ対象とする光触媒膜の基板の少なくと
も一部分に外部から接地できる電極を形成しておくこと
を特徴とする光触媒膜の能力評価用の光触媒体。(3) The photocatalytic film according to (1), wherein the capability is evaluated by comparing changes in surface potential measured in an inert gas atmosphere and an atmosphere in which the reaction target compound is present. How to evaluate your ability. (4) An apparatus for evaluating the performance of a photocatalytic film, comprising a light source for light irradiation and a surface potential measuring device. (5) The apparatus for evaluating the performance of a photocatalytic film according to (4), further including a light source for light irradiation, a surface potential measuring device, and a container or a gas ejection nozzle capable of controlling a gas atmosphere. (6) The photocatalytic film is characterized in that an electrode that can be grounded from the outside is formed on at least a part of the substrate of the target photocatalytic film in order to be used in the method (1) for evaluating the performance of the photocatalytic film. Photocatalyst for evaluation.
【０００６】本発明の作用を以下に説明する。光触媒に
そのバンドギャップエネルギー以上のエネルギーを持つ
光を照射すると、価電子帯の電子は光励起により伝導帯
に遷る。その時、価電子帯では電子が抜けた正孔が生じ
る。いわゆる、電荷分離である。半導体である光触媒
は、その表面に表面準位が形成される。この準位は半導
体の原子配列の周期性の欠如、あるいは表面特有の原子
配列などにより生じるものである。そのため半導体の表
面近傍のバンドはその表面準位に存在する電荷と釣り合
おうとするために湾曲する。これは光励起により生じた
電子・正孔対にとっては電位勾配として働き、電子と正
孔を引き離し再結合を防ぐ。これによりｎ型半導体の光
触媒では表面付近には正孔が、ｐ型半導体の光触媒では
表面付近には電子が存在するようになる。The operation of the present invention will be described below. When the photocatalyst is irradiated with light having an energy greater than the band gap energy, electrons in the valence band shift to the conduction band by photoexcitation. At that time, holes are generated in the valence band from which electrons have escaped. This is so-called charge separation. A photocatalyst, which is a semiconductor, has a surface level formed on its surface. This level is caused by a lack of periodicity in the atomic arrangement of the semiconductor or an atomic arrangement peculiar to the surface. Therefore, the band near the surface of the semiconductor is curved in order to balance the electric charge existing at the surface level. This acts as a potential gradient for an electron-hole pair generated by photoexcitation, and separates electrons and holes to prevent recombination. As a result, holes are present near the surface of the n-type semiconductor photocatalyst, and electrons are present near the surface of the p-type semiconductor photocatalyst.
【０００７】光触媒作用はこの電子あるいは正孔が表面
に吸着した化合物と作用して、反応を進めさせるもので
ある。よって反応速度は表面の単位面積あたりに存在す
る電子あるいは正孔の量に存在している。そこで、ｎ型
半導体の場合、表面に存在する正孔量を測定すれば、光
触媒能力の判断がつく。この表面に局在した正孔あるい
は電子はその表面上の空間に電場を形成する。この空間
電場を測定すれば、局在キャリア量の度合がわかる。ま
た、不活性ガス、たとえば窒素、ヘリウム、アルゴンガ
スなど、を吹き付けながら測定を行うことにより、表面
に移動してきた正孔や電子などのキャリアを消費せず
に、生成したキャリア量がわかる。In the photocatalysis, the electrons or holes act on the compound adsorbed on the surface to promote the reaction. Therefore, the reaction rate depends on the amount of electrons or holes existing per unit area of the surface. Therefore, in the case of an n-type semiconductor, the photocatalytic ability can be determined by measuring the amount of holes existing on the surface. Holes or electrons localized on this surface form an electric field in the space above the surface. By measuring this spatial electric field, the degree of the localized carrier amount can be determined. Further, by performing measurement while blowing an inert gas such as nitrogen, helium, or argon gas, the amount of generated carriers can be determined without consuming carriers such as holes and electrons that have moved to the surface.
【０００８】これに対して、水蒸気が存在する室内雰囲
気中や反応対象化合物が存在するガス、たとえば、アル
デヒド類や芳香族化合物などを含むガス、を吹き付けな
がら同様な測定を行う。これら２つの表面電位の変化を
比較することで、表面で消費されるキャリア量を予測す
ることができる。光照射により生成するキャリア量を効
果的に測定するためには、測定対象とする光触媒膜の全
部あるいは一部の下地に、外部から接地できる電極を形
成しておくと効果的に測定が可能である。この接地した
電極は膜内部に局在した電荷、すなわち、表面に正孔が
局在する系では電子が持つ電荷、を打ち消す。それによ
り表面に局在した電荷のみが空間電場を形成し、測定可
能となる。[0008] On the other hand, the same measurement is carried out while spraying a gas containing a compound to be reacted, such as a gas containing an aldehyde or an aromatic compound, in an indoor atmosphere where water vapor is present. By comparing these two changes in surface potential, the amount of carriers consumed on the surface can be predicted. In order to effectively measure the amount of carriers generated by light irradiation, it is possible to measure effectively if an electrode that can be grounded from the outside is formed on the entire or partial base of the photocatalytic film to be measured. is there. This grounded electrode negates the charge localized within the film, that is, the charge of electrons in a system where holes are localized on the surface. As a result, only the charges localized on the surface form a spatial electric field and can be measured.
【０００９】[0009]
【発明の実施の形態】〔実施例〕以下に、本発明の実施
の形態を実施例を用いて更に詳細に検討する。厚さ０．
１ｍｍのチタン板上５に酸化チタン膜２を形成し、サン
プルを作製した。膜２としては、ゾルゲル法により作製
した。膜厚はいずれも３００ｎｍに統一した。熱処理の
方法を１つは４５０℃３０分、もう一つは、７００℃３
０分で行った。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [Embodiments] Embodiments of the present invention will be described below in more detail with reference to embodiments. Thickness 0.
A titanium oxide film 2 was formed on a 1 mm titanium plate 5 to prepare a sample. The film 2 was produced by a sol-gel method. All film thicknesses were unified to 300 nm. One of the heat treatment methods is 450 ° C. for 30 minutes, and the other is 700 ° C.3
Performed at 0 minutes.
【００１０】これら２種類のサンプルに対して図１の様
な実験配置１で、表面電位の変化を追った。チタン板５
を接地７し、表面電位計４のプローブ８をその光触媒膜
２に接触させ、光照射用光源６からの光３を照射しなが
らその表面電位を測定した。測定は１秒間隔に行った。
初め、サンプルを暗状態に置き、測定開始から１０秒後
に光照射を開始し、３０秒照射後、再び暗状態にする。
その後も測定を続け、全測定時間は３００秒行った。同
様な測定を表面電位計４のプローブ８の先端から窒素を
吹き付けながら行った。その時の両者の変化を図２に示
す。なお、図２中の（ａ）はゾルゲル法により作製し４
５０℃で焼成した酸化チタン膜の結果であり、（ｂ）は
ゾルゲル法により作製し７００℃で焼成した酸化チタン
膜の結果を示す。（ａ）においては、光照射を行ってい
る間及び光照射を停止した後に、大気中と窒素ガス吹き
付けとで表面電位の値に差があり、この差は空気中の酸
素や水蒸気で消費されるキャリア量であると予想でき
る。（ｂ）においては、大気中と窒素ガス吹き付け状態
との間には差がない。For these two types of samples, changes in surface potential were tracked in an experimental arrangement 1 as shown in FIG. Titanium plate 5
Was grounded 7, the probe 8 of the surface voltmeter 4 was brought into contact with the photocatalytic film 2, and the surface potential was measured while irradiating the light 3 from the light source 6 for light irradiation. The measurement was performed at one second intervals.
First, the sample is placed in a dark state, light irradiation is started 10 seconds after the start of the measurement, and after the irradiation for 30 seconds, the sample is returned to a dark state.
The measurement was continued thereafter, and the total measurement time was 300 seconds. The same measurement was performed while blowing nitrogen from the tip of the probe 8 of the surface electrometer 4. FIG. 2 shows the changes at the time. (A) in FIG. 2 was prepared by the sol-gel method.
It is a result of the titanium oxide film baked at 50 ° C, and (b) shows the result of the titanium oxide film produced by the sol-gel method and baked at 700 ° C. In (a), during the light irradiation and after the light irradiation is stopped, there is a difference in the value of the surface potential between the atmosphere and the blowing of the nitrogen gas, and this difference is consumed by oxygen and water vapor in the air. Can be expected. In (b), there is no difference between the atmosphere and the state of blowing nitrogen gas.
【００１１】次に両サンプルの光触媒効果の確認を行っ
た。対象として、水中のジニトロフェノールの光触媒分
解反応を選んだ。５００ｍｌビーカーにジニトロフェノ
ール水溶液５０ｍｌを入れ、そのビーカーの底にサンプ
ルを上向きにして静置した。光照射用の光源としては超
高圧水銀ランプを用い、光のみによるジニトロフェノー
ルの直接分解を避けるため、紫外カットフィルタ（ＵＶ
３１；波長３１０ｎｍは５０％透過、２６０ｎｍ以下は
透過せず）を通して照射した。光照射とともに水中のジ
ニトロフェノールの濃度変化を追った。結果を図３に示
す。なお、図３中の（ａ）はゾルゲル法により作製し４
５０℃で焼成した酸化チタン膜を用いた場合の結果であ
り、（ｂ）はゾルゲル法により作製し７００℃で焼成し
た酸化チタン膜を用いた場合の結果を示す。４５０℃で
焼成した酸化チタン膜（ａ）は水中のジニトロフェノー
ルを分解したが、７００℃で焼成した酸化チタン膜
（ｂ）は分解できなかった。Next, the photocatalytic effect of both samples was confirmed. As a target, a photocatalytic decomposition reaction of dinitrophenol in water was selected. 50 ml of an aqueous solution of dinitrophenol was placed in a 500 ml beaker, and the sample was allowed to stand at the bottom of the beaker with the sample facing upward. An ultra-high pressure mercury lamp is used as the light source for light irradiation. To avoid direct decomposition of dinitrophenol by light alone, an ultraviolet cut filter (UV
31; a wavelength of 310 nm is transmitted at 50%, and a wavelength of 310 nm or less is not transmitted). The change in the concentration of dinitrophenol in water was tracked with light irradiation. The results are shown in FIG. (A) in FIG. 3 is prepared by the sol-gel method.
The results are for the case where a titanium oxide film fired at 50 ° C. is used, and (b) shows the result when a titanium oxide film manufactured by a sol-gel method and fired at 700 ° C. is used. The titanium oxide film (a) fired at 450 ° C. decomposed dinitrophenol in water, but the titanium oxide film (b) fired at 700 ° C. could not decompose.
【００１２】実施例２ 厚さ１ｍｍのソーダガラス上に、透明導電膜である酸化
スズを厚さ２００ｎｍで被覆した透明導電膜ガラス上に
光触媒膜を形成し、光触媒板を作製した。光触媒膜とし
ては、ゾルゲル法酸化チタン膜（Ｔ3 ）、微結晶酸化チ
タン分散コーティング液塗布膜（Ｔ2 ）、過酸化水素酸
化チタン塗布後焼成膜（Ｔ1 ）の３種類の膜を用いた。
膜厚はいずれも３００ｎｍに統一した。これら３種類の
光触媒板に対して、表面電位の変化を追った。表面電位
は１秒間隔に測定した。初め、光触媒板を暗状態に置
き、測定開始から１０秒後に光照射を開始し、３０秒照
射後、暗状態にし、その後も測定を続け、全３００秒の
測定を行った。Example 2 A photocatalytic film was formed on a transparent conductive film glass in which a transparent conductive film of tin oxide was coated with a thickness of 200 nm on soda glass having a thickness of 1 mm. As the photocatalyst film, three kinds of films were used: a sol-gel method titanium oxide film (T 3 ), a microcrystalline titanium oxide dispersed coating liquid coating film (T 2 ), and a hydrogen peroxide titanium oxide post-fired film (T 1 ). .
All film thicknesses were unified to 300 nm. The change in surface potential was followed for these three types of photocatalytic plates. The surface potential was measured at one second intervals. First, the photocatalyst plate was placed in a dark state, light irradiation was started 10 seconds after the start of the measurement, irradiation was performed for 30 seconds, the state was set to a dark state, and the measurement was continued thereafter, and measurement was performed for a total of 300 seconds.
【００１３】同様な測定を表面電位計のプローブの先端
からヘリウムを吹き付けながら行った。大気中およびヘ
リウムを吹き付けながら行った表面電位の変化で、光照
射を行っている間の表面電位の値に差があり、この差は
空気中の酸素や水蒸気で消費されるキャリア量であると
予想できる。この表面電位の差をΔＶとする。次に各サ
ンプルの光触媒効果の確認を行った。対象として、水中
のジニトロフェノールの光触媒分解反応を選んだ。方法
は実施例１と同様な方法で行った。光触媒分解実験より
分解速度定数Ｋを求めた。表面電位の差をΔＶと分解速
度定数Ｋとの間には、図４のような関係が得られた。The same measurement was performed while spraying helium from the tip of the probe of the surface electrometer. Due to the change in surface potential in the air and while spraying helium, there is a difference in the value of the surface potential during light irradiation, and this difference is the amount of carrier consumed by oxygen and water vapor in the air. Can be expected. This difference in surface potential is defined as ΔV. Next, the photocatalytic effect of each sample was confirmed. As a target, a photocatalytic decomposition reaction of dinitrophenol in water was selected. The method was performed in the same manner as in Example 1. The decomposition rate constant K was determined from a photocatalytic decomposition experiment. The relationship as shown in FIG. 4 was obtained between the difference in surface potential ΔV and the decomposition rate constant K.
【００１４】比較例１厚さ１ｍｍの合成石英（絶縁体）
上に、実施例１と同様の酸化チタン膜を形成し、サンプ
ルを作製した。サンプルの背面に銅板を密着し、これを
接地して表面電位の測定を行った。４５０℃焼成、７０
０℃焼成のサンプルとも、光照射に伴う表面電位の変化
を観測できなかった。上記２つの実施例から、光照射時
における表面電位の変化量で、大気中と窒素ガス雰囲気
での表面電位変化量の差が大きいほど光触媒効果が高い
ことが予測できる。このように表面電位の変化を観察す
ることで、光触媒効果の有無やその大小を評価すること
ができる。さらにそれらは、短時間に非接触で行うこと
ができる。Comparative Example 1 1 mm thick synthetic quartz (insulator)
A titanium oxide film similar to that of Example 1 was formed thereon to prepare a sample. A copper plate was adhered to the back of the sample, and this was grounded to measure the surface potential. 450 ° C firing, 70
No change in the surface potential due to light irradiation was observed in any of the samples fired at 0 ° C. From the above two examples, it can be predicted that the photocatalytic effect is higher as the difference in the surface potential between the atmosphere and the nitrogen gas atmosphere is larger, based on the change in the surface potential during light irradiation. By observing the change in the surface potential in this manner, the presence or absence of the photocatalytic effect and the magnitude thereof can be evaluated. Furthermore, they can be performed in a short time without contact.
【００１５】[0015]
【発明の効果】本発明の方法、装置および能力評価用の
光触媒体によって、光触媒膜の能力を簡便に短時間で評
価することができる。According to the method, the apparatus and the photocatalyst for performance evaluation of the present invention, the performance of the photocatalyst film can be easily and quickly evaluated.
【図１】本発明の光触媒評価装置の概略図。FIG. 1 is a schematic diagram of a photocatalyst evaluation device of the present invention.
【図２】実施例１における表面電位の変化を示すグラフ
である。FIG. 2 is a graph showing a change in surface potential in Example 1.
【図３】実施例１における光触媒膜を用いた光照射時間
と水中のジニトロフェノール濃度変化を示すグラフ。FIG. 3 is a graph showing light irradiation time using a photocatalytic film and a change in dinitrophenol concentration in water in Example 1.
【図４】実施例２における表面電位の差ΔＶと光触媒分
解実験における分解速度定数Ｋとの関係を示すグラフ。FIG. 4 is a graph showing a relationship between a difference ΔV in surface potential and a decomposition rate constant K in a photocatalytic decomposition experiment in Example 2.
【符号の説明】 １ 実験装置 ２ 光触媒膜 ３ 光 ４ 表面電位計 ５ チタン板 ６ 光照射用光源 ７ 接地 ８ プローブ[Explanation of Signs] 1 Experimental apparatus 2 Photocatalytic film 3 Light 4 Surface potential meter 5 Titanium plate 6 Light irradiation light source 7 Grounding 8 Probe
Claims (6)
て、光照射とともに変化する表面電位を測定することに
よって、その能力を評価することを特徴とする光触媒膜
の能力の評価方法。1. A method for evaluating the performance of a photocatalytic film, wherein the capability is evaluated by measuring a surface potential that changes with light irradiation.
よび水蒸気存在雰囲気とで測定した表面電位の変化を比
較することにより、その能力を評価することを特徴とす
る請求項１記載の光触媒膜の能力の評価方法。2. The photocatalytic film according to claim 1, wherein the capability of the photocatalytic film is evaluated by comparing changes in surface potential measured in an inert gas atmosphere and an atmosphere containing oxygen and water vapor. Ability evaluation method.
象化合物存在雰囲気とで測定した表面電位の変化を比較
することにより、その能力を評価することを特徴とする
請求項１記載の光触媒膜の能力の評価方法。3. The photocatalytic film according to claim 1, wherein the capability of the photocatalytic film is evaluated by comparing changes in surface potential measured in an inert gas atmosphere and an atmosphere in which the reaction target compound is present. Ability evaluation method.
ことを特徴とする光触媒膜の能力の評価装置。4. An apparatus for evaluating the performance of a photocatalytic film, comprising a light source for light irradiation and a surface potential measuring device.
囲気を制御できる容器あるいはガス噴出ノズルを備えて
いることを特徴とする請求項４記載の光触媒膜の能力の
評価装置。5. The apparatus for evaluating the performance of a photocatalytic film according to claim 4, further comprising a light source for light irradiation, a surface potential measuring device, and a container or a gas ejection nozzle capable of controlling a gas atmosphere.
用いるため、あらかじめ対象とする光触媒膜の基板の少
なくとも一部分に外部から接地できる電極を形成してお
くことを特徴とする光触媒膜の能力評価用の光触媒体。6. The photocatalytic film according to claim 1, wherein an electrode that can be grounded from outside is formed on at least a part of the substrate of the photocatalytic film to be used in advance. Photocatalyst for performance evaluation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10065509A JPH11258206A (en) | 1998-03-16 | 1998-03-16 | Method and device for evaluating photocatalyst |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10065509A JPH11258206A (en) | 1998-03-16 | 1998-03-16 | Method and device for evaluating photocatalyst |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11258206A true JPH11258206A (en) | 1999-09-24 |
Family
ID=13289110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10065509A Pending JPH11258206A (en) | 1998-03-16 | 1998-03-16 | Method and device for evaluating photocatalyst |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11258206A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002031612A (en) * | 2000-07-14 | 2002-01-31 | Japan Atom Energy Res Inst | Method for evaluating photocatalytic performance by measuring quantity of pulse light excited surface hole |
| JP2002257812A (en) * | 2001-03-02 | 2002-09-11 | Japan Atom Energy Res Inst | Method for evaluating performance of semiconductor photocatalyst by complementary measurement of pulse laser light-excited surface carrier |
| KR20040043895A (en) * | 2002-11-20 | 2004-05-27 | 주식회사 유진텍 이십일 | Apparatus for measuring photocatalytic activity and method using the same |
| KR100435423B1 (en) * | 2001-12-22 | 2004-06-10 | 재단법인 포항산업과학연구원 | Measuring method of Anti-corrosion performance for photocatalytic effect coating |
| JP2009036652A (en) * | 2007-08-02 | 2009-02-19 | Toshiro Kawaguchi | Photocatalytic activity quantitative measuring instrument and method |
-
1998
- 1998-03-16 JP JP10065509A patent/JPH11258206A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002031612A (en) * | 2000-07-14 | 2002-01-31 | Japan Atom Energy Res Inst | Method for evaluating photocatalytic performance by measuring quantity of pulse light excited surface hole |
| JP4630995B2 (en) * | 2000-07-14 | 2011-02-09 | 独立行政法人 日本原子力研究開発機構 | Photocatalytic performance evaluation method by pulse photoexcitation surface hole content measurement |
| JP2002257812A (en) * | 2001-03-02 | 2002-09-11 | Japan Atom Energy Res Inst | Method for evaluating performance of semiconductor photocatalyst by complementary measurement of pulse laser light-excited surface carrier |
| KR100435423B1 (en) * | 2001-12-22 | 2004-06-10 | 재단법인 포항산업과학연구원 | Measuring method of Anti-corrosion performance for photocatalytic effect coating |
| KR20040043895A (en) * | 2002-11-20 | 2004-05-27 | 주식회사 유진텍 이십일 | Apparatus for measuring photocatalytic activity and method using the same |
| JP2009036652A (en) * | 2007-08-02 | 2009-02-19 | Toshiro Kawaguchi | Photocatalytic activity quantitative measuring instrument and method |
| JP4571170B2 (en) * | 2007-08-02 | 2010-10-27 | 俊郎 川口 | Photocatalytic activity quantitative measurement apparatus and photocatalytic activity quantitative measurement method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yamakata et al. | Water-and oxygen-induced decay kinetics of photogenerated electrons in TiO2 and Pt/TiO2: a time-resolved infrared absorption study | |
| Hayes et al. | Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy | |
| Zemlyanov et al. | XPS observation of OH groups incorporated in an Ag (111) electrode | |
| Sterrer et al. | Energy transfer on the MgO surface, monitored by UV− induced H2 chemisorption | |
| Du et al. | Effect of water vapor on plasma morphology, OH and H2O2 production in He and Ar atmospheric pressure dielectric barrier discharges | |
| Scheiderer et al. | Surface-interface coupling in an oxide heterostructure: Impact of adsorbates on LaAlO 3/SrTiO 3 | |
| Imbihl | Electrochemical promotion of catalytic reactions | |
| KR101204342B1 (en) | Sample plate for MALDI-Tof mass spectrometer and a method for analysing a mass using the MALDI-Tof mass spectrometer | |
| JPH0228322A (en) | Preliminary treatment of semiconductor substrate | |
| JP2000294530A (en) | Method for cleaning semiconductor substrate and its cleaner | |
| JP2014041030A (en) | Impurity analysis method of semiconductor substrate | |
| Shondo et al. | Nanoscale synergetic effects on Ag–TiO2 hybrid substrate for photoinduced enhanced Raman spectroscopy (PIERS) with ultra‐sensitivity and reusability | |
| Oelkrug et al. | Photoionization on insulator surfaces: diffuse reflectance laser flash photolysis of distyrylbenzenes adsorbed on silica and alumina | |
| Sawada et al. | Reduction of copper oxide thin films with hydrogen plasma generated by a dielectric-barrier glow discharge | |
| Shaw et al. | Thermal analysis of positive photoresist films by mass spectrometry | |
| JPH11258206A (en) | Method and device for evaluating photocatalyst | |
| Celii et al. | UV laser-induced photochemistry of iron pentacarbonyl on single crystal surfaces in ultrahigh vacuum | |
| Dubois et al. | Stabilization of the porous silicon surface by grafting of organic groups: direct electrochemical methylation | |
| Ozawa et al. | A surface science approach to unveiling the TiO2 photocatalytic mechanism: Correlation between photocatalytic activity and carrier lifetime | |
| Wang et al. | Photocatalytic chemistry of methanol on rutile TiO 2 (011)-(2× 1) | |
| Kennelly et al. | Photoinduced disproportionation of Ru (bpy) 32+ on porous Vycor glass | |
| Satoh et al. | Decomposition of benzene in a corona discharge at atmospheric pressure | |
| Roberts et al. | Evidence from photoelectron spectroscopy for dissociative adsorption of oxygen on nickel oxide | |
| Elam et al. | Adsorption and desorption of HCl on a single-crystal α-Al2O3 (0001) surface | |
| JP2005214933A (en) | Hydrogen sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050315 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060425 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070131 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070328 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20070412 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070412 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070608 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070725 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071205 |