JPH11256345A - Plating apparatus - Google Patents
Plating apparatusInfo
- Publication number
- JPH11256345A JPH11256345A JP7136898A JP7136898A JPH11256345A JP H11256345 A JPH11256345 A JP H11256345A JP 7136898 A JP7136898 A JP 7136898A JP 7136898 A JP7136898 A JP 7136898A JP H11256345 A JPH11256345 A JP H11256345A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating solution
- substrate
- flow
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板のめっき装置
に係り、特に半導体基板に形成された配線用溝等に銅
（Ｃｕ）等の金属を充填するための充填方法及び装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus for a substrate, and more particularly to a filling method and apparatus for filling a wiring groove or the like formed in a semiconductor substrate with a metal such as copper (Cu).
【０００２】[0002]
【従来の技術】従来、半導体基板上に配線回路を形成す
るためには、基板面上にスパッタリング等を用いて成膜
を行った後、さらにレジスト等のパターンマスクを用い
たケミカルドライエッチングにより膜の不要部分を除去
していた。2. Description of the Related Art Conventionally, in order to form a wiring circuit on a semiconductor substrate, a film is formed on the substrate surface by sputtering or the like, and then the film is formed by chemical dry etching using a pattern mask such as a resist. Unnecessary parts were removed.
【０００３】配線回路を形成するための材料としては、
アルミニウム（Ａｌ）又はアルミニウム合金が用いられ
ているが、集積度が高くなるにつれて配線が細くなり、
電流密度が増加するために熱応力や温度上昇を生じる。
これは、ストレスマイグレーションやエレクトロマイグ
レーションによってＡｌ等が希薄化するに従いさらに顕
著となり、ついには断線のおそれが生じる。[0003] Materials for forming a wiring circuit include:
Aluminum (Al) or aluminum alloy is used, but as the degree of integration increases, the wiring becomes thinner,
The increase in current density causes thermal stress and temperature rise.
This becomes more remarkable as Al or the like is diluted by stress migration or electromigration, and eventually there is a risk of disconnection.
【０００４】そこで、通電による過度の発熱を避けるた
め、より導電性の高い材料を配線形成に採用することが
必然的に要求されている。現用材料のうち、Ａｌ系より
も電気比抵抗の小さい材料としては、銅（Ｃｕ）と銀
（Ａｇ）がある。Therefore, in order to avoid excessive heat generation due to energization, it is necessary to employ a material having higher conductivity for forming the wiring. Among the current materials, copper (Cu) and silver (Ag) are materials having lower electric resistivity than Al-based materials.
【０００５】しかしながら、Ｃｕ又はその合金はドライ
エッチングが難しく、全面を成膜してからパターン形成
する上記の方法の採用は困難である。そこで、予め所定
パターンの配線用の溝を形成しておき、その中にＣｕ又
はその合金を充填する工程が考えられる。これによれ
ば、膜をエッチングにより除去する工程は不要で、充填
後に表面段差を取り除くための研磨工程を行えばよい。
また、多層回路の上下を連絡するプラグと呼ばれる部分
も同時に形成することができる利点がある。[0005] However, it is difficult to dry-etch Cu or its alloy, and it is difficult to employ the above-described method of forming a pattern after forming the entire surface. Therefore, a process of forming a wiring groove in a predetermined pattern in advance and filling the groove with Cu or an alloy thereof may be considered. According to this, a step of removing the film by etching is unnecessary, and a polishing step for removing a surface step after filling may be performed.
Further, there is an advantage that a portion called a plug that connects the upper and lower sides of the multilayer circuit can be formed at the same time.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うな配線溝あるいはプラグの形状は、配線幅が微細化す
るに伴いかなりの高アスペクト比（深さと直径又は幅の
比）となり、スパッタリング成膜では均一な金属の充填
が困難であった。また、種々の材料の成膜手段として気
相成長（ＣＶＤ）法が用いられるが、Ｃｕ又はその合金
では、適当な気体原料を準備することが困難であり、ま
た、有機原料を採用する場合には、これから堆積膜中へ
炭素（Ｃ）が混入してマイグレーション性が上がるとい
う問題点があった。However, the shape of such a wiring groove or plug has a considerably high aspect ratio (ratio of depth to diameter or width) as the wiring width becomes finer. It was difficult to uniformly fill the metal. Further, a vapor phase growth (CVD) method is used as a film forming means of various materials. However, it is difficult to prepare an appropriate gaseous raw material with Cu or an alloy thereof. However, there is a problem that carbon (C) is mixed into the deposited film to increase the migration property.
【０００７】さらに、基板をめっき液中に浸漬させて無
電解又は電解めっきを行なう方法も提案されているが、
溝や穴の底部への液の循環やイオンの供給が不充分とな
るので、溝の縁に比べて底部の膜成長が遅く、溝の上部
が詰まって底部に空洞（ボイド）ができてしまうなどし
て、均一な充填が困難であった。このため、基板とめっ
き液とを相対的に回転させたり、基板に向けてめっき液
を噴射させることで、めっき液の基板表面の微細窪み内
への流入、或いはめっきすべき金属イオンの流動を促進
させて、めっきの均一性を図ることが考えられる。Further, a method has been proposed in which a substrate is immersed in a plating solution to perform electroless or electrolytic plating.
Insufficient circulation of liquid and supply of ions to the bottom of the groove or hole, resulting in slower film growth at the bottom than at the edge of the groove, resulting in a clogging of the top of the groove and a void at the bottom. For example, uniform filling was difficult. Therefore, by relatively rotating the substrate and the plating solution, or by spraying the plating solution toward the substrate, the plating solution flows into the fine depressions on the substrate surface or the flow of the metal ions to be plated. It is conceivable to promote the uniformity of plating.
【０００８】しかしながら、基板とめっき液とを相対的
に回転させると、基板の中央部と外周部でのめっき液の
流速が異なり、このため、境界層の厚さに差が生じて、
めっき厚さや組成の面内均一性が低下してしまう。However, when the substrate and the plating solution are relatively rotated, the flow rates of the plating solution at the central portion and the outer peripheral portion of the substrate are different, so that a difference occurs in the thickness of the boundary layer.
The in-plane uniformity of plating thickness and composition is reduced.
【０００９】本発明は、上記の事情に鑑み、微細な配線
用の溝等の微細窪みに銅又は銅合金等の電気的抵抗の小
さい材料を、基板の全面に亘って均一に充填することが
できるめっき装置を提供することを目的とする。According to the present invention, in view of the above circumstances, a material having a low electrical resistance such as copper or a copper alloy can be uniformly filled in a fine depression such as a fine wiring groove over the entire surface of a substrate. It is an object of the present invention to provide a plating apparatus that can be used.
【００１０】[0010]
【課題を解決するための手段】請求項１に記載の発明
は、めっき室を形成するめっき容器と、該めっき室の内
部で基板を保持し、かつその周囲に基板とほぼ面一のめ
っき液流通面を構成する保持台と、前記めっき室内にお
いて前記基板及びめっき流通面の上面に沿ってめっき液
の平行な均一流れを形成するめっき液流れ形成部と、前
記めっき液流れ形成部にめっき液を供給するめっき液供
給装置とを有することを特徴とするめっき装置である。According to a first aspect of the present invention, there is provided a plating container for forming a plating chamber, and a plating solution for holding a substrate inside the plating chamber and surrounding the substrate with a plating solution substantially flush with the substrate. A holding table that forms a flow surface, a plating solution flow forming unit that forms a parallel uniform flow of the plating solution along the upper surface of the substrate and the plating flow surface in the plating chamber, and a plating solution that flows into the plating solution flow forming unit. And a plating solution supply device for supplying the plating solution.
【００１１】これにより、基板の上面をめっき液が該基
板の全面に亘って均一な速度で流れるようにして、めっ
き液の微細窪みへの流入を促進しつつめっき厚さや組成
の面内均一性を向上させることができる。Thus, the plating solution flows at a uniform speed over the entire surface of the substrate over the entire surface of the substrate, thereby facilitating the flow of the plating solution into the fine pits and ensuring uniformity of the plating thickness and composition within the surface. Can be improved.
【００１２】請求項２に記載の発明は、前記めっき液流
れ形成部は、前記めっき室を挟んだ両側に所定のピッチ
で対向して設けられた２つのめっき液流通孔列を有する
ことを特徴とする請求項１に記載のめっき装置である。
これにより、簡単な構成でめっき液の平行な均一流れを
安定に形成することができる。[0012] The invention according to claim 2 is characterized in that the plating solution flow forming section has two plating solution flow hole rows provided at opposite sides of the plating chamber at a predetermined pitch. The plating apparatus according to claim 1, wherein
This makes it possible to stably form a parallel, uniform flow of the plating solution with a simple configuration.
【００１３】請求項３に記載の発明は、前記めっき液供
給装置には、前記めっき液流れ形成部へのめっき液の供
給を切り替えてめっき室でのめっき液流れ方向を切り替
える切り替え手段が設けられていることを特徴とする請
求項１に記載のめっき装置である。これにより、めっき
液を交互に流すことで、上流下流の差を相殺してめっき
の全面に亘る均一性を確保することができる。According to a third aspect of the present invention, in the plating solution supply device, there is provided switching means for switching the supply of the plating solution to the plating solution flow forming section to switch the direction of the plating solution flow in the plating chamber. The plating apparatus according to claim 1, wherein: Thereby, by flowing the plating solution alternately, the difference between the upstream and the downstream can be offset and uniformity over the entire surface of the plating can be secured.
【００１４】請求項４に記載の発明は、前記めっき室の
内部には、前記めっき液流れの方向に交差する方向に揺
動する整流板が設けられていることを特徴とする請求項
１に記載のめっき装置である。整流板の揺動によりめっ
き液の流れに交差する方向での回転流が交互に生じ、め
っき液の基板表面の微細窪み内への流入、或いはめっき
すべき金属イオンの流動をより促進させることができ
る。整流板には、液の流れ方向に延びる仕切板を設ける
とその作用がより顕著になる。According to a fourth aspect of the present invention, in the first aspect, a rectifying plate that swings in a direction intersecting with the direction of the plating solution flow is provided inside the plating chamber. It is a plating apparatus of description. Rotational flow in the direction intersecting with the flow of the plating solution occurs alternately due to the swinging of the current plate, which can further promote the inflow of the plating solution into the fine depressions on the substrate surface or the flow of metal ions to be plated. it can. When a current plate is provided with a partition plate extending in the flow direction of the liquid, the effect becomes more remarkable.
【００１５】請求項５に記載の発明は、請求項１ないし
４のいずれかに記載のめっき装置を用いてめっきを行っ
た後、基板に付着した金属の不要部分を化学的・機械的
研磨装置により研磨して除去することを特徴とする基板
の加工方法である。According to a fifth aspect of the present invention, after plating is performed using the plating apparatus according to any one of the first to fourth aspects, an unnecessary portion of metal adhering to the substrate is chemically and mechanically polished. A substrate processing method characterized in that the substrate is removed by polishing.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。このめっき装置は、基板Ｗ
を載置保持する円形の基板保持面１０ａとその周囲のめ
っき液流通面１０ｂとを有する基台１０と、この基台１
０の上面を水密的に覆い、該基台１０との間で水平方向
に拡がるほぼ矩形のめっき室１２を形成する天板（キャ
ップ）１４とから構成されるめっき容器１５を備えてい
る。この天板１４は、基台１０に対して例えば、蝶番等
によってめっき室１２を開閉可能なように設けられ、基
板Ｗの出し入れやメンテナンスの便宜を図っている。Embodiments of the present invention will be described below with reference to the drawings. This plating apparatus uses a substrate W
And a base 10 having a circular substrate holding surface 10a for mounting and holding the substrate, and a plating solution flowing surface 10b around the base holding surface 10a.
And a top plate (cap) 14 which covers an upper surface of the watertight in a watertight manner and forms a substantially rectangular plating chamber 12 extending horizontally with respect to the base 10. The top plate 14 is provided so as to be able to open and close the plating chamber 12 with respect to the base 10 by, for example, a hinge or the like, so that the substrate W can be taken in and out and maintenance is facilitated.
【００１７】キャップ１４には、中央下面に矩形の凹部
１４ａが設けられ、この凹部１４ａと基板保持面１０ａ
の間にめっき室１２が形成される。キャップ１４には、
めっき容器１５の長手方向（図１又は２において左右方
向）の両端部にめっき液貯液部１６ａ，１６ｂが設けら
れ、めっき液貯液部１６ａ，１６ｂはめっき室１２と隔
壁１８ａ，１８ｂによって区画されている。そして、こ
れら隔壁１８ａ，１８ｂには、めっき液貯液部１６ａ，
１６ｂとめっき室１２とを連通する多数の流通孔２０
ａ，２０ｂが所定のピッチｐ1で設けられている。The cap 14 is provided with a rectangular recess 14a at the center lower surface, and the recess 14a and the substrate holding surface 10a are provided.
The plating chamber 12 is formed during the process. In the cap 14,
Plating solution storage portions 16a and 16b are provided at both ends in the longitudinal direction (left and right directions in FIG. 1 or 2) of the plating container 15, and the plating solution storage portions 16a and 16b are partitioned by the plating chamber 12 and the partition walls 18a and 18b. Have been. The partition walls 18a and 18b have plating solution reservoirs 16a and
16b and a large number of communication holes 20 communicating with the plating chamber 12.
a, 20b are provided at a predetermined pitch p 1.
【００１８】めっき容器１５の外部には、めっき室１２
にめっき液を供給するめっき液供給手段２２が備えられ
ている。このめっき液供給手段２２は、第１のめっき液
循環ライン２４ａと第２のめっき液循環ライン２４ｂと
を有し、これらの両ライン２４ａ，２４ｂは、互いに合
流して循環ポンプ２６の吸込側と吐出側、及び各めっき
液貯液部１６ａ，１６ｂにそれぞれ接続されている。そ
して、第１のめっき液循環ライン２４ａには、ポンプ２
６を挟んで開閉弁２８ａ，２８ｂが、第２のめっき液循
環ライン２４ｂにも、ポンプ２６を挟んで開閉弁２８
ｃ，２８ｄがそれぞれ設置されている。The plating chamber 12 is provided outside the plating container 15.
Is provided with a plating solution supply means 22 for supplying a plating solution. The plating solution supply means 22 has a first plating solution circulation line 24a and a second plating solution circulation line 24b, and these two lines 24a and 24b are merged with each other and connected to the suction side of the circulation pump 26. It is connected to the discharge side and each of the plating solution storage sections 16a and 16b. The pump 2 is connected to the first plating solution circulation line 24a.
6 are also connected to the second plating solution circulation line 24b with the pump 26 interposed therebetween.
c and 28d are provided respectively.
【００１９】これにより、第１のめっき液循環ライン２
４ａの各開閉弁２８ａ，２８ｂを開き、第２のめっき液
循環ライン２４ｂの各開閉弁２８ｃ，２８ｄを閉じるこ
とで、めっき液が第１のめっき液循環ライン２４ａ内を
実線の矢印に沿って流れ、めっき室１２を図１又は図２
において左から右に流れる。逆に、第１のめっき液循環
ライン２４ａの各開閉弁２８ａ，２８ｂを閉じ、第２の
めっき液循環ライン２４ｂの各開閉弁２８ｃ，２８ｄを
開くと、めっき液が第２のめっき液循環ライン２４ｂ内
を流れ、めっき室１２を図１又は図２において右から左
に流れる。Thus, the first plating solution circulation line 2
By opening the on-off valves 28a, 28b of 4a and closing the on-off valves 28c, 28d of the second plating solution circulation line 24b, the plating solution flows in the first plating solution circulation line 24a along the solid arrow. The flow and the plating chamber 12 are shown in FIG. 1 or FIG.
Flows from left to right at. Conversely, when the on / off valves 28a and 28b of the first plating solution circulating line 24a are closed and the on / off valves 28c and 28d of the second plating solution circulating line 24b are opened, the plating solution flows into the second plating solution circulating line. 24b, and flows through the plating chamber 12 from right to left in FIG. 1 or FIG.
【００２０】めっき室１２内には、１辺の長さａが基板
保持面１０ａに保持される基板Ｗの直径ｄより僅かに長
い正方形状の整流板３０が配置されている。この整流板
３０の下面には、めっき容器１５の長手方向に直線状に
延びる複数の仕切壁３２が所定のピッチｐ2で平行に垂
設されている。一方、整流板３０の上面中央には、上方
に突出する軸体３４が設けられている。この軸体３４
は、キャップ１４の中央に長手方向に直交する方向にピ
ッチｐ2より長く延びて設けられた長穴３６に挿入さ
れ、軸体３４と長穴３６の間はベローズ３８のような柔
軟性部材で覆われている。In the plating chamber 12, a square rectifying plate 30 whose side length a is slightly longer than the diameter d of the substrate W held on the substrate holding surface 10a is arranged. This on the lower surface of the current plate 30, a plurality of partition walls 32 extending linearly are parallel vertically at a predetermined pitch p 2 in the longitudinal direction of the plating vessel 15. On the other hand, a shaft 34 protruding upward is provided at the center of the upper surface of the current plate 30. This shaft 34
Is inserted into the long hole 36 formed extending longer than the pitch p 2 in the direction perpendicular to the longitudinal direction in the center of the cap 14, between the shaft 34 and slots 36 in the flexible member, such as bellows 38 Covered.
【００２１】軸体３４は、長穴３６よりキャップ１４の
上面に突出し、これには、軸体３４を長穴３６に沿って
往復動させる駆動手段が連結されている。従って、整流
板３０は軸体３４を介して仕切壁３２と直交する方向、
すなわち、隔壁１８ａ，１８ｂと平行な方向に、仕切壁
３２のピッチｐ2よりも大きな振幅で揺動するようにな
っている。The shaft 34 projects from the long hole 36 to the upper surface of the cap 14, and a driving means for reciprocating the shaft 34 along the long hole 36 is connected to the shaft 34. Therefore, the current plate 30 is arranged in a direction orthogonal to the partition wall 32 via the shaft body 34,
That is, the partition wall 18a, and 18b in a direction parallel, so as to swing in amplitude greater than the pitch p 2 of the partition walls 32.
【００２２】このように構成されためっき装置の作用
を、半導体基板の配線回路形成のためのＣｕ又はその合
金のめっきを行なう場合について説明する。被処理対象
の基板Ｗには、図６（ａ）に示すように、半導体回路素
子が形成された半導体基材５０の上に導電層５２及びＳ
ｉＯ2からなる絶縁層５４を堆積させた後、リソグラフ
ィ・エッチング技術によりコンタクトホール５６と配線
用の溝５８が形成され、その上にＴｉＮ等からなるバリ
ア層６０が形成されている。The operation of the plating apparatus configured as described above will be described for the case of plating Cu or an alloy thereof for forming a wiring circuit on a semiconductor substrate. As shown in FIG. 6A, a substrate W to be processed includes a conductive layer 52 and a conductive layer 52 on a semiconductor substrate 50 on which semiconductor circuit elements are formed.
After depositing the insulating layer 54 made of iO 2, a contact hole 56 and a groove 58 for wiring are formed by lithography and etching technology, and a barrier layer 60 made of TiN or the like is formed thereon.
【００２３】このような基板Ｗを基台１０の基板保持面
１０ａ上に載置し、キャップ１４を閉じた後、例えば第
１のめっき液循環ライン２４ａを開き、第２のめっき液
循環ライン２４ｂを閉じた状態で、ポンプ２６を作動さ
せる。すると、めっき液は、一方のめっき液貯液部１６
ａから隔壁１８ａの流通孔２０ａよりめっき室１２内に
流入し、基板Ｗの上面に全面に亘る均一な平行流を形成
して基板Ｗのめっきを行った後、他方の隔壁１８ｂの流
通孔２０ｂからめっき液貯液部１６ｂに排出される。After placing such a substrate W on the substrate holding surface 10a of the base 10 and closing the cap 14, for example, the first plating solution circulation line 24a is opened and the second plating solution circulation line 24b is opened. , The pump 26 is operated. Then, the plating solution is supplied to one of the plating solution storage portions 16.
a, flows into the plating chamber 12 through the flow holes 20a of the partition walls 18a, forms a uniform parallel flow over the entire surface of the substrate W, performs plating of the substrate W, and then flows through the flow holes 20b of the other partition wall 18b. From the plating solution storage section 16b.
【００２４】このように、めっき液を基板Ｗの上面に沿
って流すことで、基板Ｗのコンタクトホール５６および
溝５８内へのめっき液の流入、或いはめっきすべき金属
イオンの流動が促進される。しかも、基板Ｗの全面をめ
っき液が均一な速度で一方向に流れるので、定常的な流
れが形成されて境界層の厚さも均一となり、めっき厚さ
や組成の面内均一性が確保される。As described above, by flowing the plating solution along the upper surface of the substrate W, the inflow of the plating solution into the contact holes 56 and the grooves 58 of the substrate W or the flow of metal ions to be plated is promoted. . In addition, since the plating solution flows in one direction at a uniform speed over the entire surface of the substrate W, a steady flow is formed, the thickness of the boundary layer becomes uniform, and the in-plane uniformity of the plating thickness and the composition is secured.
【００２５】上記の工程において、適宜に、整流板３０
を仕切壁３２と直交する方向に適当な振幅で揺動させ
る。この振幅は、仕切板３２のピッチｐ2程度の適宜な
値に設定される。すると、めっき液は仕切壁３２により
押され、図５に示すように、例えば整流板３０を左方向
（同図（ａ））に移動する時には、めっき液に左回りの
上下方向の回転流が生じ、右方向（同図（ｂ））に移動
する時には、めっき液に右回りの上下方向の回転流が生
じる。これにより、基板Ｗのコンタクトホール５６およ
び溝５８内へのめっき液の流入、或いはめっきすべき金
属イオンの流動をさらに促進させることができる。In the above process, the current plate 30
Is swung at an appropriate amplitude in a direction orthogonal to the partition wall 32. This amplitude is set to an appropriate value of about pitch p 2 of the partition plate 32. Then, the plating solution is pushed by the partition wall 32, and as shown in FIG. 5, for example, when the current plate 30 is moved leftward (FIG. 5A), a counterclockwise vertical rotating flow is applied to the plating solution. When the plating solution moves in the right direction ((b) in the figure), a clockwise clockwise vertical rotational flow is generated in the plating solution. Thereby, the inflow of the plating solution into the contact holes 56 and the grooves 58 of the substrate W or the flow of the metal ions to be plated can be further promoted.
【００２６】次に、一定のタイミングで開閉弁２８ａ〜
２８ｄを操作して、第１のめっき液循環ライン２４ａを
閉じ、第２のめっき液循環ライン２４ｂを開き、めっき
液の流れを逆転させる。すなわち、めっき液をめっき液
貯液部１６ｂの流通孔２０ｂからめっき室１２内に導入
し、めっき液貯液部１６ａ側の隔壁１８ａの流通孔２０
ａから排出する。これを交互に行なうことにより、めっ
き液の上流、下流に起因するめっきの不均一を相殺し
て、めっき厚さや組成の基板全面における面内均一性を
更に向上させることができる。Next, the on-off valves 28a to 28a
By operating 28d, the first plating solution circulation line 24a is closed, and the second plating solution circulation line 24b is opened to reverse the flow of the plating solution. That is, the plating solution is introduced into the plating chamber 12 through the flow hole 20b of the plating solution storage portion 16b, and the flow hole 20b of the partition wall 18a on the plating solution storage portion 16a side.
Discharge from a. By alternately performing this, the unevenness of plating caused by the upstream and downstream of the plating solution is offset, and the in-plane uniformity of the plating thickness and composition over the entire surface of the substrate can be further improved.
【００２７】以上の液相めっき工程により、図６（ｂ）
に示すように半導体基板Ｗのコンタクトホール５６およ
び溝５８にＣｕが充填される。その後、化学的機械的研
磨（ＣＭＰ）により、絶縁膜５４上に堆積したＣｕ層を
除去し、コンタクトホール５６および配線用の溝５８に
充填されたＣｕ層６２の表面と絶縁膜５４の表面とを同
一平面にする。これにより、図６（ｃ）に示すようにＣ
ｕ層６２からなる配線が形成される。By the above liquid phase plating process, FIG.
As shown in FIG. 7, Cu is filled in the contact hole 56 and the groove 58 of the semiconductor substrate W. Thereafter, the Cu layer deposited on the insulating film 54 is removed by chemical mechanical polishing (CMP), and the surfaces of the Cu layer 62 and the surface of the insulating film 54 filled in the contact holes 56 and the wiring grooves 58 are removed. On the same plane. As a result, as shown in FIG.
A wiring composed of the u layer 62 is formed.
【００２８】[0028]
【発明の効果】以上説明したように、本発明によれば、
基板の上面をめっき液が該基板の全面に亘って均一な速
度で流れるようにして、めっき液の微細窪みへの流入あ
るいはめっきすべき金属イオンの流動を促進しつつめっ
き厚さや組成の面内均一性を向上させることができるの
で、微細な配線用の溝等の微細窪みに銅又は銅合金等の
電気的抵抗の小さい材料を、基板の全面に亘って均一に
しかも空洞（ボイド）を形成することなく充填すること
ができる。従って、高密度化する半導体集積回路の実用
化を促進する有用な技術を提供することができる。As described above, according to the present invention,
The plating solution is caused to flow at a uniform speed over the entire surface of the substrate on the upper surface of the substrate to promote the inflow of the plating solution into the fine depressions or the flow of the metal ions to be plated while maintaining the plating thickness and composition within the plane. Since uniformity can be improved, a material having a small electric resistance such as copper or a copper alloy is uniformly formed over the entire surface of the substrate in a fine recess such as a fine wiring groove, and a void is formed. Can be filled without having to do so. Therefore, it is possible to provide a useful technique for promoting practical use of a semiconductor integrated circuit having a high density.
【図１】本発明の実施の形態のめっき装置の全体の概要
を示す断面図（図２のＡ−Ａ線断面図）である。FIG. 1 is a cross-sectional view (a cross-sectional view taken along the line AA in FIG. 2) illustrating an overall outline of a plating apparatus according to an embodiment of the present invention.
【図２】同じく、平面図である。FIG. 2 is also a plan view.
【図３】図２のＢ−Ｂ線断面図である。FIG. 3 is a sectional view taken along line BB of FIG. 2;
【図４】整流板を示す斜視図である。FIG. 4 is a perspective view showing a current plate.
【図５】整流板の揺動に伴う作用を説明する部分拡大断
面図である。FIG. 5 is a partially enlarged cross-sectional view illustrating an operation accompanying the swing of the current plate.
【図６】本発明のめっき装置によってめっきを行なう工
程の一例を示す断面図である。FIG. 6 is a sectional view showing an example of a step of performing plating by the plating apparatus of the present invention.
１０ 基台 １０ａ 基板保持面 １０ｂ めっき液流通面 １２ めっき室 １４ キャップ １５ 容器 １６ａ，１６ｂ めっき液貯液部 １８ａ，１８ｂ 隔壁部 ２０ａ，２０ｂ 流通孔 ２２ めっき液供給手段 ２４ａ，２４ｂ めっき液循環ライン ３０ 整流板 ３２ 仕切壁 Reference Signs List 10 base 10a substrate holding surface 10b plating solution flowing surface 12 plating chamber 14 cap 15 container 16a, 16b plating solution storage portion 18a, 18b partition wall portion 20a, 20b flow hole 22 plating solution supply means 24a, 24b plating solution circulation line 30 Rectifier plate 32 partition wall
───────────────────────────────────────────────────── フロントページの続き (72)発明者 賈 明洋 神奈川県藤沢市本藤沢４丁目２番１号 株 式会社荏原総合研究所内 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Akihiro Jia 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Inside Ebara Research Institute, Ltd.
Claims (5)
とほぼ面一のめっき液流通面を構成する保持台と、 前記めっき室内において前記基板及びめっき流通面の上
面に沿ってめっき液の平行な均一流れを形成するめっき
液流れ形成部と、 前記めっき液流れ形成部にめっき液を供給するめっき液
供給装置とを有することを特徴とするめっき装置。1. A plating container forming a plating chamber; a holding table for holding a substrate inside the plating chamber and forming a plating solution flow surface substantially flush with the substrate around the plating container; A plating solution flow forming unit that forms a parallel uniform flow of the plating solution along the upper surfaces of the substrate and the plating flow surface; and a plating solution supply device that supplies a plating solution to the plating solution flow forming unit. And plating equipment.
室を挟んだ両側に所定のピッチで対向して設けられた２
つのめっき液流通孔列を有することを特徴とする請求項
１に記載のめっき装置。2. The plating solution flow forming section is provided on both sides of the plating chamber at a predetermined pitch.
The plating apparatus according to claim 1, wherein the plating apparatus has two plating solution flow hole arrays.
液流れ形成部へのめっき液の供給を切り替えてめっき室
でのめっき液流れ方向を切り替える切り替え手段が設け
られていることを特徴とする請求項１に記載のめっき装
置。3. The plating solution supply device is provided with switching means for switching the supply of the plating solution to the plating solution flow forming section to switch the direction of the plating solution flow in the plating chamber. The plating apparatus according to claim 1.
流れの方向に交差する方向に揺動する整流板が設けられ
ていることを特徴とする請求項１に記載のめっき装置。4. The plating apparatus according to claim 1, wherein a rectifying plate that swings in a direction intersecting with the direction of the plating solution flow is provided inside the plating chamber.
っき装置を用いてめっきを行った後、基板に付着した金
属の不要部分を化学的・機械的研磨装置により研磨して
除去することを特徴とする基板の加工方法。5. After plating using the plating apparatus according to claim 1, unnecessary portions of the metal adhered to the substrate are polished and removed by a chemical / mechanical polishing apparatus. A method of processing a substrate, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07136898A JP3772941B2 (en) | 1998-03-05 | 1998-03-05 | Plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07136898A JP3772941B2 (en) | 1998-03-05 | 1998-03-05 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11256345A true JPH11256345A (en) | 1999-09-21 |
| JP3772941B2 JP3772941B2 (en) | 2006-05-10 |
Family
ID=13458500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07136898A Expired - Fee Related JP3772941B2 (en) | 1998-03-05 | 1998-03-05 | Plating equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3772941B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008190013A (en) * | 2007-02-07 | 2008-08-21 | Casio Comput Co Ltd | Plating device and plating method |
| JP2009517543A (en) * | 2005-11-23 | 2009-04-30 | セミトゥール・インコーポレイテッド | Apparatus and method for vibrating liquids during wet chemical processing of microstructured workpieces |
| JP2013040395A (en) * | 2011-08-19 | 2013-02-28 | Ebara Corp | Substrate processing device and substrate processing method |
-
1998
- 1998-03-05 JP JP07136898A patent/JP3772941B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009517543A (en) * | 2005-11-23 | 2009-04-30 | セミトゥール・インコーポレイテッド | Apparatus and method for vibrating liquids during wet chemical processing of microstructured workpieces |
| JP2008190013A (en) * | 2007-02-07 | 2008-08-21 | Casio Comput Co Ltd | Plating device and plating method |
| JP2013040395A (en) * | 2011-08-19 | 2013-02-28 | Ebara Corp | Substrate processing device and substrate processing method |
| US9556533B2 (en) | 2011-08-19 | 2017-01-31 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3772941B2 (en) | 2006-05-10 |
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