JPH11248652A - X-ray diffraction measuring method and x-ray differactometer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make measurable the crystal orientation of a single crystal with a simple structure. SOLUTION: A divergent X-ray is used as an X-ray irradiating an object to be measured 12. A position of shielding the divergent X-ray with a shield 10 is changed to observe the change in intensity of a diffraction X-ray with a X-ray detector 14. A the X-ray injected to the object to be measured 12 at a Bragg angle θB accounts for most of the diffraction X-ray, a crystal orientation can be judged from the position of the shield 10 where the intensity of the diffraction X-ray is abruptly changed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray diffraction measuring method and an X-ray diffractometer, and more particularly, to a method of measuring the crystal orientation of a single crystal having a plane cross section in a plane portion thereof.
The present invention relates to an X-ray diffraction measurement method and an X-ray diffraction apparatus for measuring using X-ray diffraction.

[0002]

2. Description of the Related Art Single crystals such as semiconductor wafers and crystal oscillators used in semiconductor devices for forming electronic circuits are cut and polished so as to have a surface along a specific crystal plane. However, the angle between the surface and the crystal plane includes some error in manufacturing, and the measurement of the angle between the surface and the crystal plane is required. The measurement accuracy of this angle is 10 seconds (1 second =
(1/3600 °) or less, and is measured by an X-ray diffraction method.

In general, to measure the crystal orientation using X-rays, X-ray Bragg reflection is measured. When an X-ray is incident on a certain crystal plane at an angle of θ with respect to the normal of the crystal plane, reflection occurs at θ satisfying 2d sin θ = nλ (1). This is the condition of Bragg,
Θ at this time is called a Bragg angle. In the equation (1), λ is the wavelength of the X-ray, d is the surface interval of the surface, and n is a natural number.

When a sample is irradiated with X-rays, reflection of the X-rays is observed when the incident angle to the sample surface is equal to the Bragg angle if the sample surface and the crystal lattice plane are completely parallel.

When the incident angle at which X-ray reflection is observed is different from the Bragg angle, the difference is the angle between the crystal lattice plane and the sample surface.

When the crystal surface is irradiated with fine or parallel bundle X-rays having a constant wavelength and the irradiation angle is changed, reflection occurs when the irradiation X-rays and the crystal lattice plane have a Bragg angle. An X-ray detector is installed in the direction of X-ray reflection, the irradiation angle at which the reflected X-ray intensity is maximized is determined, and the crystal orientation is calculated from the orientation of the lattice plane and the irradiation angle that causes Bragg reflection (hereinafter referred to as the incident angle). I do.

A conventional measuring method will be described below with reference to the drawings. FIG. 18 is a schematic diagram showing a configuration of an X-ray diffraction apparatus using a conventional measurement method.

This X-ray diffractometer is composed of an X-ray source 102 for generating X-rays, and a monochromator comprising a single crystal which receives the X-rays generated by the X-ray source 102 and diffracts into a single wavelength (monochromatic). 104, slits 106 and 108 that receive X-rays diffracted by the monochromator 104 and turn them into parallel bundles,
The apparatus includes a goniometer 112 capable of precisely rotating the object 110 to be measured and an X-ray detector 114 for measuring the intensity of diffracted X-rays reflected by the sample 110.

FIG. 19 shows the diffraction X-ray intensity and the incident angle θ determined by the goniometer 112 in the conventional measuring method.
FIG.

Referring to FIGS. 18 and 19, when the incident angle θ1 is sufficiently smaller than the Bragg angle, the diffraction X
Since no X-ray is detected by the X-ray detector 114, the received light intensity of the diffracted X-ray is weak.

As the goniometer 112 is rotated to increase the incident angle θ of the X-ray, the light receiving intensity of the diffracted X-ray becomes maximum at the incident angle θ2 near the Bragg angle.

Further, when the goniometer 112 is rotated, the X-ray detector 114 is rotated at a rotational position where the incident angle becomes θ3.
In this case, almost no diffracted X-rays from the sample 110 are detected, and the intensity of the diffracted X-rays becomes weak again.

The angle θ2 determined as described above and the sample 1
Bragg angle θB depending on the material and plane orientation of 10
The angle between the sample surface and the crystal lattice plane can be obtained by calculating the difference between

[0014]

As described above, in the conventional measuring method, the incident angle of irradiating the crystal surface with a fine or parallel bundle of X-rays having a constant wavelength is changed, and the reflected X-ray intensity is reduced. Find the maximum angle of incidence.

Therefore, a precise goniometer for rotating the sample to change the angle of incidence of the X-ray on the sample is required.

However, the accuracy required for measuring the crystal orientation is 10 seconds, and the rotation accuracy of the goniometer is 1/100.
0 ° is required. For this reason, there has been a problem that the apparatus becomes large and that quick measurement is difficult.

An object of the present invention is to provide an X-ray diffraction measuring method and an X-ray diffractometer capable of quickly measuring the crystal orientation with a simple configuration without using a precision goniometer.

[0018]

According to a first aspect of the present invention, there is provided an X-ray diffraction measuring method for measuring a crystal orientation by X-ray diffraction. A step of generating divergent X-rays including X-rays having a Bragg angle, and measuring by shielding a part of the divergent X-rays with a shield so as to reduce a desired solid angle of an object to be measured from a divergent X-ray divergence center And a step of measuring a change in the intensity of the diffracted X-ray diffracted by the measurement object.

According to a second aspect of the present invention, there is provided the X-ray diffraction measuring method according to the first aspect, wherein the divergent X-rays are obtained by converting the X-rays generated by the X-ray generating means into a curved single-crystal monochrome. The light is diffracted by the meter and collected at the divergence center.

According to a third aspect of the present invention, there is provided the X-ray diffraction measuring method according to the first aspect, wherein the shield comprises a measuring means for measuring a change in the intensity of the diffracted X-ray, a divergence center and a measuring means. Rotation is performed with an axis perpendicular to a plane including the object as an eccentric axis.

According to a fourth aspect of the present invention, there is provided the X-ray diffraction measuring method according to the first aspect, wherein the shield detects a change in the intensity of the diffracted X-ray as a boundary of a portion for shielding the divergent X-ray. It has an end face orthogonal to a plane including the measuring means for measuring, the divergence center, and the object to be measured.

According to a fifth aspect of the present invention, there is provided an X-ray diffraction apparatus for generating divergent X-rays from a linear divergence center toward an object to be measured, and a part of the divergent X-rays for measuring the divergent X-rays. X-ray limiting means for X-rays and X-rays for measurement applied to the object to be measured
X-ray measuring means for measuring the intensity of diffraction X-rays of the X-ray,
The X-ray limiting unit includes a shielding unit that shields a part of the divergent X-ray whose position can be changed so as to reduce a desired solid angle of the object to be measured from the divergence center of the divergent X-ray.

The X-ray diffractometer according to the sixth aspect is the fifth aspect.
In the described X-ray diffractometer, the shielding means rotates with an eccentric axis perpendicular to a plane including the measuring means for measuring the change in the intensity of the diffracted X-ray, the divergence center, and the object to be measured.

The X-ray diffractometer according to claim 7 is the fifth embodiment.
In the X-ray diffractometer described above, the shielding means is an end face orthogonal to a plane including a measuring means for measuring a change in the intensity of the diffracted X-ray, a divergence center, and a measurement object, as a boundary of a part for shielding the divergent X-ray. Having.

The X-ray diffractometer according to the eighth aspect is the fifth aspect.
In addition to the configuration of the X-ray diffraction apparatus described above, the divergent X-ray generation unit includes an X-ray generation unit that generates X-rays, and a diffraction unit that receives X-rays, diffracts and monochromates, and condenses the divergence center. Including.

[0026]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings, the same reference numerals indicate the same or corresponding parts.

Embodiment 1 FIG. 1 is a schematic diagram showing a configuration of an X-ray diffraction apparatus using an X-ray diffraction measurement method according to Embodiment 1 of the present invention.

Referring to FIG. 1, X in the first embodiment
The X-ray diffractometer diverges toward the sample 12 to be measured.
A divergent X-ray generator 7 that generates rays, an X-ray restrictor 11 that blocks a part of the divergent X-rays generated by the divergent X-ray generator 7,
An X-ray detector for detecting diffracted X-rays diffracted by the sample to be measured;

The divergent X-ray generator 7 has an X-ray source 2 for generating X-rays, a curved monochromator 4 for receiving X-rays from the X-ray source 2 and for converting it into a single wavelength, X-ray divergent X
And a narrow gap 6 which becomes a linear condensing area for condensing light for irradiation as a line. The slit 6 becomes the divergent center of divergent X-rays.

The X-ray limiting section 11 includes a slit 8 for limiting the spread of divergent X-rays and a shield 10 for shielding a part of the divergent X-rays.

In the figure, θ is the angle of incidence on the crystal lattice plane, θB is the Bragg angle, α is the irradiation angle on the sample plane, and β is the angle formed between the sample surface and the crystal lattice plane.

FIG. 2 is a flowchart for explaining the X-ray diffraction measurement method according to the first embodiment.

First, in step S2, FIG.
Object 12, X-ray detector 14, shield 1 shown in FIG.
0, the respective positions of the slits 8 are initialized. X-rays incident on the measurement target 12 are incident on the measurement target 12 at an incident angle corresponding to the divergence angle limited by the slit 8. The setting angle of the measuring object 12 and the slit 8 for limiting the divergence angle are adjusted in advance so that the incident angle includes the Bragg angle.

In step S4, X-rays are generated from the X-ray source 2. In this state, X-rays reflected by Bragg are incident on the X-ray detector 14. In step S6, the intensity of the diffracted X-ray is measured.

Next, step S8 via step S7
Then, the position of the shield 10 is moved to narrow the X-rays incident on the measurement object 12. The step of moving the position of the shield in step S8 while measuring the intensity in step S6 is repeated. When the collection of the measurement data is completed, the crystal orientation of the measurement object 12 is determined in step S9, and the measurement is completed in step S10.

FIG. 3 is a schematic diagram showing a mechanism for shielding divergent X-rays from one side by the shield 10.

The amount of X-ray shielding is changed by moving the knife-edge type shield 10 in a direction perpendicular to the X-ray irradiation direction. In FIG. 3, divergence X within the range indicated by arrows 32 and 36 is shown.
A line is illuminated. An X-ray incident on the measurement object at a Bragg angle is indicated by an arrow 34.

Here, assuming that the distance between the origin of the divergent X-rays and the shield 10 is 200 mm, to obtain the crystal orientation with an accuracy of 1/1000 °, the movement accuracy of the shield 10 is 3.5 μm.
requires m. Assuming that the angle of divergence of the incident X-ray is 5 °, the moving distance of the shield 10 required to shield all of them is about 17 mm, and it is easy to obtain the moving accuracy described above for this moving distance. is there.

FIG. 4 is a diagram showing the positional relationship between the X-ray diffraction intensity obtained by the X-ray diffraction measurement method described in the first embodiment and the shield 10.

The horizontal axis indicates the position of the shielding body 10 for shielding X-rays, and the vertical axis indicates the X-ray intensity detected by the X-ray detector 14.

Area A is an area indicating the position of the shield when the X-rays for measurement applied to the object to be measured include X-rays having an incident angle of the Bragg angle, and area C is an area indicating the X-rays for measurement. This is an area indicating the position of the shield when X-rays whose incident angle is the Bragg angle are not included. Region B is from region A to region C
, Which is caused by the wavelength width of incident X-rays and the finite size of the divergence origin.

Referring to FIGS. 3 and 4, when the position of shield 10 is in region A, X-rays indicated by arrow 34 incident on the object to be measured at the Bragg angle are shielded by shield 10. Therefore, diffraction X-rays due to this are detected, and the X-ray detection intensity is high.

When the position of the shield 10 is in the region B, the X-rays indicated by the arrow 34 are blocked, and Bragg reflection lines cannot be obtained from the object to be measured. Changes rapidly to small. When the position of the shield 10 is in the region C, the shield 10 completely blocks the X-rays indicated by the arrow 34, and the X-ray intensity maintains a substantially constant value while being small.

FIG. 5 is a diagram for explaining a method for obtaining the center point of the transition region of the X-ray detection curve shown in FIG.

A straight line 42 is an approximate straight line of the intensity curve of the area A, a straight line 44 is an approximate straight line of the intensity curve of the area B, and a straight line 46 is an approximate straight line of the intensity curve of the area C.
The straight line 48 indicated by the broken line in the figure is the height of the straight line 42 and the straight line 4.
6 is a straight line indicating an intermediate height between the heights 6.

By calculating the intersection of the straight line 44 and the straight line 48, the position of the shield that blocks the X-ray incident on the object to be measured is determined at the Bragg angle.

If the relationship between the position of the X-ray shield and the angle of incidence on the surface of the object to be measured is known from a standard sample whose crystal orientation is known in advance, the position of the intersection between the straight line 44 and the straight line 48 in FIG. The orientation of the crystal can be specified.

When an X-ray tube is used as the X-ray source, the X-rays generated from the cathode of the X-ray tube include characteristic X-rays and continuous X-rays. The characteristic X-rays are a plurality of types of X-rays whose wavelengths are specific to the anti-cathode material, and the continuous X-rays are X-rays whose wavelengths are continuously distributed.

Usually, in the measurement of X-ray diffraction by Bragg reflection, incident X-rays having a constant wavelength are used, and characteristic X-rays usually called Kα rays are used. A single crystal called a monochromator separates continuous X-rays and characteristic X-rays,
A curved single crystal monochromator is used to split and monochromatic X-rays using Bragg reflection of a cylindrically curved single crystal. In FIG. 1 of the first embodiment, a monochromatic divergent X-ray is obtained using a curved monochromator 4.

However, it is not always necessary to make a single color.
When the irradiated X-rays are not monochromatic, the diffracted X-rays are Kα1 having slightly different wavelengths among the irradiated X-rays.
X-rays and two types of characteristic X-rays, Kα2 rays. At this time, the shape of the X-ray detection intensity curve detected by the X-ray detector changes.

FIG. 6 is a diagram showing the positional relationship between the X-ray intensity and the shield 10 when continuous X-rays that are not monochromatic are used.

As compared with FIG. 4, the X-ray intensities in the area D and the area F are not constant, and it is difficult to find the middle point of the transition area E. A curve is obtained.

Therefore, for example, it is possible to use the X-ray tube as it is as the divergent X-ray generator and not to use the monochromator.

As described above, the X-ray diffraction measurement method and the X-ray diffraction apparatus described in the first embodiment do not require a precise goniometer, so that the X-ray diffraction measurement method and the X-ray diffraction apparatus can have a simple configuration and can be measured in a short time. Can be.

[Second Embodiment] FIG. 7 is a schematic diagram showing a configuration of an X-ray diffractometer using an X-ray diffraction measurement method according to a second embodiment.

The X-ray diffractometer according to the second embodiment differs from the first embodiment in that a shield 62 shown in FIG. 7 is provided instead of the shield 10 in FIG.

FIG. 8 is a diagram for explaining the operation of the shield 62. Referring to FIG. 7 and FIG.
Cuts off the X-rays by rotating about an axis orthogonal to a plane including the X-ray detector 14 for measuring the change in the intensity of the diffracted X-rays and the divergence center of the divergent X-rays and the measurement object 12.

Here, assuming that the distance between the X-ray divergence source and the shield 62 is 200 mm and the radius of rotation of the shield 62 is 20 mm, the rotational accuracy of the shield is required to obtain a crystal orientation measurement accuracy of 1/1000 °. 1 ° is sufficient, and implementation is very easy.
In addition, since the rotation mechanism is used, high-speed measurement can be performed by increasing the rotation speed. The shape of the shield 62 does not have to be a knife edge type, and its tip may be an arc having a radius smaller than the radius of rotation.

[Third Embodiment] FIG. 9 is a schematic diagram showing a configuration of an X-ray diffraction apparatus according to a third embodiment.

The X-ray diffractometer according to the third embodiment is a device for measuring the deviation angle of the crystal cut surface of the sample crystal by applying the X-ray diffraction measurement method described in the first and second embodiments. is there.

Referring to FIG. 9, the X-ray diffraction apparatus according to the third embodiment shields a part of divergent X-rays from divergent X-ray generator 7 that generates divergent X-rays toward sample crystal 82. An X-ray limiting unit 11, a sample holder 80 for fixing a sample crystal 82, and an X-ray detector 14 for measuring the intensity of a diffracted X-ray 86 diffracted by the sample crystal 82 are provided.

FIGS. 10 and 11 are diagrams for explaining the angle between the X-ray incident on the sample crystal 82 and the sample surface and crystal plane.

Referring to FIGS. 9 and 10, the surface of sample crystal 82 is processed so as to form a deviation angle α between the surface and the crystal plane. The X-ray diffraction apparatus according to the third embodiment checks whether the deviation angle α falls within a predetermined value range.

First, the sample crystal 82 is set on the sample holder 80 in a predetermined direction. X that forms the Bragg angle θB with the crystal plane
The line 84 is diffracted, and the diffracted X-ray 86 is detected by the X-ray detector 14. At this time, the angle ω1 formed between the surface of the sample crystal and the incident X-ray 84 is measured.

Next, the sample holder is rotated 180 ° about the normal to the sample crystal plane as an axis, and the incident angle at which diffraction occurs again is measured. FIG. 11 shows the state after rotating the sample holder by 180 °.
FIG. 5 is a diagram for explaining an incident angle ω2 of an X-ray at which diffraction occurs with respect to a sample surface.

In this case, the surface of the sample crystal 82 and the incident X-ray 8
The angle ω2 formed by 4 is different from that before the crystal is rotated by 180 °.

In FIG. 10, ω1 = θB-α, and FIG.
Since ω2 = θB + α, the deviation angle α = (ω2−ω1) / 2.

Since the X-ray diffractometer of the third embodiment uses a shield for limiting divergent X-rays and X-rays, a goniometer for precisely rotating the sample crystal is not required. Measurement can be completed in a short time.

[Embodiment 4] FIG. 12 shows Embodiment 4 of the present invention.
FIG. 2 is a schematic diagram showing a configuration of an X-ray diffraction apparatus of FIG.

The X-ray diffraction apparatus according to the fourth embodiment is an apparatus for detecting a position to be an orientation flat surface of a crystal ingot using the X-ray diffraction measurement method described in the first and second embodiments. is there.

Referring to FIG. 12, an X-ray diffraction apparatus according to the fourth embodiment includes a divergent X-ray generator 7 for generating divergent X-rays, an X-ray restrictor 11 for shielding a part of the divergent X-rays, An ingot table 90 supporting a crystal ingot 88 to be measured, and a diffraction X diffracted by the crystal ingot 88
An X-ray detector 14 for measuring the intensity of the line 86.

In the X-ray diffractometer according to the fourth embodiment,
The divergent X-ray generation unit 7, the X-ray restriction unit 11, and the X-ray detector 14 are arranged in an arrangement corresponding to the Bragg angle θB at which X-ray diffraction by a predetermined crystal plane of the crystal ingot 88 occurs. A crystal ingot 88 is placed vertically on the X-ray beam on the ingot table 90, and the ingot table can rotate around the central axis of the crystal ingot 88.

First, the ingot table is rotated so that the X-ray detector 86 can detect a diffracted X-ray 86 by a predetermined crystal plane.

Next, since the divergent X-rays are restricted by the X-ray restricting means 11, the X-ray diffraction angle corresponding to the current rotational position of the ingot table is accurately obtained.

The machining direction to be the orientation flat surface of the crystal ingot can be determined from the accurately measured diffraction angle.

FIG. 13 is a diagram for explaining X-ray diffraction of crystal ingot 88. Referring to FIG.
Line 84 is the angle between the crystal plane of crystal ingot 88 and the Bragg angle θ.
Under the condition satisfying B, the diffracted X-ray 86 is detected by the X-ray detector.

In the X-ray diffraction apparatus according to the fourth embodiment, the accurate measurement of the X-ray diffraction angle can be obtained by restricting the divergent X-rays by the X-ray restricting section 11, so that the rotation accuracy of the ingot table is very small. Not necessary.

Since the crystal ingot 88 is usually quite heavy, the apparatus becomes considerably large when the rotation precision of the ingot table is required. However, the X-ray diffraction apparatus according to the fourth embodiment is different from the ingot table 90 in the fourth embodiment. Since the rotation accuracy of the device is not so required, the entire device can be made compact.

[Embodiment 5] FIG. 14 shows Embodiment 5 of the present invention.
FIG. 2 is a schematic diagram showing a configuration of an X-ray diffraction apparatus of FIG.

Referring to FIG. 14, an X-ray diffraction apparatus according to the fifth embodiment includes a divergent X-ray generator 7 for generating divergent X-rays, an X-ray restrictor 11 for shielding a part of the divergent X-rays, , A sample stage 94 supporting a single crystal wafer 92, and a single crystal wafer 92
X-ray detector 14 for measuring the intensity of diffracted X-rays 86 diffracted by.

Hereinafter, this X will be described by taking a silicon wafer as an example.
The operation of the line diffraction device will be described. Silicon wafers are generally of a type processed with a surface orientation of (100), (111), (511), or the like.

FIG. 15 is a view for explaining the X-ray diffraction angle of a silicon wafer having a surface orientation of (100).

Referring to FIG. 15, when the surface orientation of the wafer is (100), when the incident X-rays 84 make an angle of 34.56 ° with respect to the surface of the silicon wafer, Bragg reflection occurs and diffraction X-rays occur. Line 86 is detected.

FIG. 16 is a view for explaining the X-ray diffraction angle of a silicon wafer having a surface orientation of (111).

Referring to FIG. 16, when the incident X-ray 84 makes 14.21 ° with respect to the surface of the silicon wafer with the surface orientation (111), the diffracted X-ray 86
Is detected.

FIG. 17 is a diagram for explaining the diffraction angle of a silicon wafer having a surface orientation of (511).

Since the (511) plane has the same diffraction angle as the (333) plane and cannot be distinguished from the (111) surface orientation, asymmetric reflection of the (400) plane is used.

Referring to FIG. 17, when incident X-rays 84 are 18.77 ° with respect to the surface of the silicon wafer, diffracted X-rays 86 which form an angle of 50.35 ° with respect to the surface of the silicon wafer are formed. Is detected.

Referring again to FIG. 14, divergent X-ray generator 7, X-ray restrictor 11, and X-ray detector 14 are set in advance so as to correspond to the X-ray diffraction angle θ of a predetermined crystal plane of single crystal wafer 92. Place. Then, the single crystal wafer 92 is set on the sample table 94 in a predetermined direction. Then, by rotating the sample stage 94, X-rays diffracted by a predetermined crystal plane of the single crystal wafer 92 are captured.

The diameter of single crystal wafers is increasing year by year.
The sample stage 94 must be able to fix a single crystal wafer of about 8 inches. Therefore, the sample stage 94 becomes large to some extent, and precisely controlling the rotation of such a large sample stage leads to an increase in the size of the apparatus.

Since the X-ray diffractometer of the fifth embodiment uses divergent X-rays, the rotation accuracy of the sample stage is not required so much.
The whole device can be made compact.

Although the case of the silicon crystal has been described above as an example, the applications of the X-ray diffractometers of the first to fifth embodiments are not limited to silicon, but may be applied to a compound semiconductor crystal such as quartz or GaAs. Can be used.

The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of an X-ray diffraction apparatus using an X-ray diffraction measurement method according to a first embodiment of the present invention.

FIG. 2 is a flowchart illustrating an X-ray diffraction measurement method according to the first embodiment.

FIG. 3 is a diagram for explaining the operation of the shield 10 shown in FIG.

FIG. 4 shows the intensity of the diffracted X-ray and the shield 1 according to the first embodiment.
It is a figure which shows the positional relationship of 0.

FIG. 5 is a diagram for explaining a method of obtaining a center point of a transition region of the X-ray detection curve shown in FIG.

FIG. 6 is a diagram showing the positional relationship between the X-ray intensity and the shield 10 when continuous X-rays that are not monochromatic are used.

FIG. 7 is a diagram illustrating a configuration of an X-ray diffraction apparatus using an X-ray diffraction measurement method according to a second embodiment.

FIG. 8 is a diagram for explaining the operation of the shield 62 shown in FIG. 7;

FIG. 9 is a schematic diagram illustrating a configuration of an X-ray diffraction apparatus according to a third embodiment.

FIG. 10 is a first diagram illustrating a deviation angle in the X-ray diffraction apparatus according to the third embodiment.

FIG. 11 is a second diagram for explaining a deviation angle in the X-ray diffraction apparatus according to the third embodiment.

FIG. 12 is a schematic diagram illustrating a configuration of an X-ray diffraction apparatus according to a fourth embodiment.

FIG. 13 is a view for explaining X-ray diffraction of an ingot 88 in the X-ray diffraction apparatus according to the fourth embodiment.

FIG. 14 is a schematic diagram illustrating a configuration of an X-ray diffraction apparatus according to a fifth embodiment.

FIG. 15 is a diagram for explaining an X-ray diffraction angle of a silicon wafer having a surface orientation of (100).

FIG. 16 is a diagram for explaining an X-ray diffraction angle of a silicon wafer having a surface orientation of (111).

FIG. 17 is a diagram for explaining an X-ray diffraction angle of a silicon wafer having a surface orientation of (511).

FIG. 18 is a diagram showing a configuration of an X-ray diffraction apparatus using a conventional X-ray diffraction measurement method.

FIG. 19 is a diagram showing a relationship between an incident angle θ and X-ray intensity obtained by the X-ray diffractometer of FIG.

[Explanation of symbols]

 Reference Signs List 2 X-ray source 4 Curved single crystal monochromator 6 Slot 7 Divergent X-ray generator 8 Limiting slit 11 X-ray restrictor 10, 62 Shield 12 Object to be measured 14 X-ray detector S2 to S10 Steps 42 to 48 Straight line 80 Sample holder 82 Sample crystal 84 Incident X-ray 86 Diffracted X-ray θB Bragg angle α Deviation angle ω1, ω2 Incident angle to sample surface 88 Crystal ingot 90 Ingot table 92 Single crystal wafer 94 Sample table

Claims (8)

[Claims] 1. A method for measuring a crystal orientation by X-ray diffraction, comprising the steps of generating divergent X-rays including X-rays whose incident angle on a lattice plane of an object to be measured is the Bragg angle of the object to be measured. Blocking a part of the divergent X-ray with a shield so as to reduce the solid angle of the object to be measured from the divergence center of the divergent X-ray with a shielding body to be a measurement X-ray; Measuring the change in intensity of the diffracted X-rays whose rays are diffracted by the object to be measured.
Line diffraction measurement method. 2. The X-ray divergence according to claim 1, wherein the divergent X-ray is generated by diffracting an X-ray generated by an X-ray generating means by a curved single crystal monochromator and condensing the X-ray at the divergence center. Line diffraction measurement method. 3. The shield according to claim 1, wherein the shield rotates with an eccentric axis perpendicular to a plane including a measurement unit for measuring a change in the intensity of the diffracted X-ray and the divergence center and the object to be measured. The X-ray diffraction measurement method described in the above. 4. The screen according to claim 1, wherein the shield is configured to define the diffraction X-ray as a boundary of a portion that shields the divergent X-ray.
2. The X-ray diffraction measurement method according to claim 1, further comprising: a measuring unit for measuring a change in the intensity of the line; 5. A divergent X-ray generating means for generating divergent X-rays from a linear divergent center toward an object to be measured, and an X-ray restricting means for shielding a part of the divergent X-rays and using them as measurement X-rays And X-ray measuring means for measuring the intensity of the diffracted X-rays of the X-rays for measurement applied to the object to be measured, wherein the X-ray limiting means comprises: An X-ray diffractometer comprising shielding means for shielding a part of the divergent X-rays, the position of which can be changed so as to reduce a desired solid angle of an object. 6. The shielding means rotates with an eccentric axis perpendicular to a plane including a measuring means for measuring a change in the intensity of the diffracted X-rays and the divergence center and the object to be measured. The X-ray diffractometer according to claim 1. 7. The diffracted X-rays as a boundary of a portion for shielding the divergent X-rays.
6. The X-ray diffractometer according to claim 5, further comprising a measuring unit for measuring a change in the intensity of the line, and an end surface orthogonal to a plane including the divergence center and the object to be measured. 8. The divergent X-ray generating means includes: an X-ray generating means for generating X-rays; and a diffracting means for receiving the X-rays, diffracting and monochromaticizing the light, and condensing the X-rays at the divergence center. 6. The X-ray diffractometer according to 5.