JPH11242050A - Three-axis acceleration sensor - Google Patents
Three-axis acceleration sensorInfo
- Publication number
- JPH11242050A JPH11242050A JP10060609A JP6060998A JPH11242050A JP H11242050 A JPH11242050 A JP H11242050A JP 10060609 A JP10060609 A JP 10060609A JP 6060998 A JP6060998 A JP 6060998A JP H11242050 A JPH11242050 A JP H11242050A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- flexible
- beams
- acceleration sensor
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、自動車、航空機、
家電製品等に用いられる半導体からなる３軸加速度セン
サに関するものである。TECHNICAL FIELD The present invention relates to an automobile, an aircraft,
The present invention relates to a three-axis acceleration sensor made of a semiconductor used for home electric appliances and the like.
【０００２】[0002]
【従来の技術】Ｓｉ等の半導体基板のほぼ中心に作用
部、その周辺に固定部を形成し、作用部にかかる加速度
による可撓部の撓みを検出し、この撓みから加速度を検
出する加速度センサとしては、特願昭６２−９０１号及
びＸＹＺの多軸方向を検出するものとして特開平６−３
３１６４６号に記載されたものがあり、ピエゾ抵抗の配
置により高感度な３軸加速度センサを実現している。2. Description of the Related Art An acceleration sensor for forming a working portion substantially at the center of a semiconductor substrate made of Si or the like and a fixed portion around the working portion to detect bending of a flexible portion due to acceleration applied to the working portion and detect acceleration from the bending. Japanese Patent Application No. 62-901 and Japanese Patent Application Laid-Open No.
No. 31,646, a highly sensitive three-axis acceleration sensor is realized by arranging piezoresistors.
【０００３】これらの内３軸加速度センサの従来例を図
１０〜１２に示す。この従来例は矩形枠状の固定部１の
各辺の内側中央部の縁から夫々中心方向に延長した４本
の可撓部２と、これら可撓部２の先端が結合される連結
部３を天面中央部に突設して可撓部２に支えられるよう
にして垂下される作用部たる重り部４とからなり、各可
撓部２と重り部４の連結部３の周囲に可撓部２と重り部
４を分離する切込み溝５を形成してある。そして各可撓
部の固定部１側基部中央には夫々ｚ軸用のピエゾ抵抗２
５を形成し、また上記連結部３側基部の両側にｘ軸又は
ｙ軸用のピエゾ抵抗２３又は２４を設けてある。Conventional examples of these three-axis acceleration sensors are shown in FIGS. In this conventional example, four flexible portions 2 extending in the center direction from the edges of the inner central portions of the respective sides of a rectangular frame-shaped fixing portion 1 and a connecting portion 3 to which the tips of the flexible portions 2 are joined. Are formed at the center of the top surface and are suspended by the flexible portion 2 so as to be supported by the flexible portion 2. The weight portions 4 are acting around the connecting portion 3 of each flexible portion 2 and the weight portion 4. A cut groove 5 for separating the flexible portion 2 and the weight portion 4 is formed. A piezoresistor 2 for the z-axis is provided at the center of the base of the fixing portion 1 of each flexible portion.
5, and a piezoresistor 23 or 24 for the x-axis or the y-axis is provided on both sides of the base portion on the side of the connecting portion 3.
【０００４】またセンサを製作する際に、犠牲層エッチ
ングの距離を少なくするための構成として、図１３〜１
５に示すような、可撓部２を３本の並行する梁２０で構
成してなる３軸加速度センサがある。更にまた、可撓部
２上のアルミ配線等による温度変化による反りを低減で
きる構造として、図１６〜１８に示すような、ｘ軸及び
ｙ軸のピエゾ抵抗２３及び２４を固定部１側の可撓部２
の基部に形成配置したものがある。FIGS. 13 to 13 show a configuration for reducing the distance of etching of a sacrifice layer when manufacturing a sensor.
As shown in FIG. 5, there is a three-axis acceleration sensor in which the flexible portion 2 is constituted by three parallel beams 20. Further, as a structure capable of reducing the warpage due to the temperature change due to the aluminum wiring or the like on the flexible portion 2, the piezo resistors 23 and 24 on the x axis and the y axis as shown in FIGS. Flexible part 2
There is one that is formed and arranged at the base part.
【０００５】また、加速度センサの感度は可撓部２の
幅、厚さの２乗に反比例し、重り部４の重量に比例す
る。また、ｘ軸及びｙ軸では可撓部２から重り部４の重
心までの距離に比例する。このような加速度センサは従
来の機械式に比べ、小型、高感度のセンサが実現でき、
また、半導体プロセスが使用できるため低コストのセン
サを提供できるものである。[0005] The sensitivity of the acceleration sensor is inversely proportional to the square of the width and thickness of the flexible portion 2 and is proportional to the weight of the weight portion 4. In the x-axis and the y-axis, the distance is proportional to the distance from the flexible portion 2 to the center of gravity of the weight portion 4. Such an acceleration sensor can realize a small, high-sensitivity sensor compared to the conventional mechanical type,
Further, since a semiconductor process can be used, a low-cost sensor can be provided.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記の
加速度センサでは、上記に示した可撓部２の幅は周辺部
にあるｚ軸のピエゾ抵抗の長さ、重り部４側にあるｘ軸
又はｙ軸のピエゾ抵抗の配線の幅とそれらの間隔から決
まってしまう。例えば、図１３〜１５の様に、３本の梁
２０で可撓部２を構成した構造では、ｘ軸又はｙ軸用の
梁２本とｚ軸用の梁１本の合計３本から構成されてお
り、感度はこの３本梁の合計幅の反比例する。そのた
め、３本梁の合計幅が広くなると感度を上げることが困
難となる。However, in the above-described acceleration sensor, the width of the flexible portion 2 described above is determined by the length of the piezoresistor on the z-axis in the peripheral portion, the x-axis on the side of the weight portion 4 or It is determined by the width of the wiring of the piezoresistors on the y-axis and their spacing. For example, as shown in FIGS. 13 to 15, in a structure in which the flexible portion 2 is configured by three beams 20, the flexible portion 2 includes two beams for the x-axis or the y-axis and one beam for the z-axis. The sensitivity is inversely proportional to the total width of the three beams. Therefore, it is difficult to increase the sensitivity when the total width of the three beams is increased.
【０００７】本発明は上記の問題点に鑑みて為されたも
ので、その目的とするところは、可撓部を構成する梁の
実質的な合計幅を狭くし、感度を向上した３軸加速度セ
ンサを提供するにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to reduce the substantial total width of the beams constituting the flexible portion and improve the sensitivity of the triaxial acceleration. Providing a sensor.
【０００８】[0008]
【課題を解決するための手段】上述の目的を達成するた
めに、請求項１の発明では、基板の中心に作用部と、該
作用部の周辺に設けた固定部と、作用部と固定部間に撓
み可能に両端が連結された可撓部とを設けるとともに、
可撓部と作用部の間に切込み溝を形成し、可撓部に歪に
より抵抗値が変化するピエゾ抵抗を設けた加速度センサ
であって、可撓部を長さ方向に並行配置された２本の梁
と該２本の該梁を固定部側にて両梁間を連結する別の梁
とで構成し、並行配置された２本の梁にｘ軸、ｙ軸方向
のピエゾ抵抗を形成し、別の梁にｚ軸方向のピエゾ抵抗
を形成して成ることを特徴とする。In order to achieve the above-mentioned object, according to the first aspect of the present invention, there is provided an operation portion at the center of a substrate, a fixing portion provided around the operation portion, an operation portion and a fixing portion. A flexible portion having both ends connected so as to be able to bend is provided,
An acceleration sensor in which a notch groove is formed between a flexible portion and an action portion, and a piezoresistor whose resistance value changes due to strain is provided in the flexible portion, wherein the flexible portions are arranged in parallel in the length direction. The two beams and another beam connecting the two beams on the fixed portion side are formed of two beams, and piezoresistances in the x-axis and y-axis directions are formed on the two beams arranged in parallel. A piezoresistor in the z-axis direction is formed on another beam.
【０００９】請求項２の発明では、請求項１の発明にお
いて、並行配置された２本の梁に対するｘ軸及びｙ軸用
のピエゾ抵抗の配置位置を、作用部側付近としたことを
特徴とする。請求項３の発明では、請求項１の発明にお
いて、並行配置された２本の梁に対するｘ軸及びｙ軸用
のピエゾ抵抗の配置位置を、別の梁に対する連結部位付
近としたことを特徴とする。According to a second aspect of the present invention, in the first aspect of the present invention, the positions of the piezoresistors for the x-axis and the y-axis with respect to the two beams arranged in parallel are located near the action portion side. I do. According to a third aspect of the present invention, in the first aspect of the present invention, the piezoresistors for the x-axis and the y-axis with respect to the two beams arranged in parallel are arranged near a connection portion with another beam. I do.
【００１０】[0010]
【発明の実施の形態】以下本発明を実施形態により説明
する。 （実施形態１）図１〜図３に本実施形態の構成を示す。
本実施形態は、Ｓｉからなる半導体基板の中心部下面に
半導体加工技術を用いて重り部４を形成し、この重り部
４の上部中央に形成した連結部３と周囲の矩形枠状の固
定部１の各辺の内側中央縁との間を薄肉の可撓部２によ
り連結し、各可撓部２と、重り部４の連結部３の周囲に
可撓部２と重り部４を分離する切込み溝５を形成してあ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to embodiments. (Embodiment 1) FIGS. 1 to 3 show the configuration of this embodiment.
In the present embodiment, a weight portion 4 is formed on the lower surface of a central portion of a semiconductor substrate made of Si by using a semiconductor processing technique, and a connection portion 3 formed in the upper center of the weight portion 4 and a surrounding rectangular frame-shaped fixing portion are formed. 1 and the inner central edge of each side are connected by a thin flexible portion 2, and each flexible portion 2 is separated from the flexible portion 2 and the weight portion 4 around the connecting portion 3 of the weight portion 4. A cut groove 5 is formed.
【００１１】ここで各可撓部２は２本の並行する梁２１
と、固定部１側の基部間を連結するように形成した別の
梁２２とにより構成されている。そして各梁２１の連結
部３との連結部位には、図２、図３に示すようにｘ軸又
はｙ軸用のピエゾ抵抗２３又は２４を形成し、別の梁２
２にはｚ軸用のピエゾ抵抗２５を形成してある。而して
本実施形態では、２本の梁２１を並行させ、３本目の梁
２２を梁２１，２１間を橋絡するように設けてあるた
め、実質的な可撓部２の幅を狭くすることができる。Here, each flexible portion 2 has two parallel beams 21
And another beam 22 formed so as to connect between the bases on the fixed part 1 side. 2 and 3, a piezoresistor 23 or 24 for the x-axis or the y-axis is formed at a connection portion of each beam 21 with the connection portion 3, and another beam 2 is formed.
2, a piezoresistor 25 for the z-axis is formed. In this embodiment, since the two beams 21 are arranged in parallel and the third beam 22 is provided so as to bridge between the beams 21 and 21, the width of the substantial flexible portion 2 is reduced. can do.
【００１２】また加速度センサの感度は梁の合計幅に反
比例するので、感度を向上することができる。例えば、
図４（ａ）に示すような梁２１，２２のサイズの場合、
梁２１の長さｄが該長さ方向に対応する梁２２の長さｃ
に比較して十分長く、図４（ｂ）に示す従来例の３本の
梁構造と比較して、およそ（２ａ＋ｅ）／２ａ倍のｘ軸
及びｙ軸の感度を得ることができる。但し、ｚ軸の感度
に関しては、ｚ軸のピエゾ抵抗２５が配置されている梁
２２の横幅が広いこと等から、ｚ軸の感度自体は減少す
る。ｘ軸及びｙ軸の感度とｚ軸感度の比は可撓部２から
重り部４の重心までの距離に影響する。例えば、加速度
センサでよく用いられている５２５μｍのウエハー厚を
持つ半導体基板を用いた場合のｚ軸／ｘ軸の比は２倍以
上あり、ｚ軸の感度が低下してもｘ軸及びｙ軸感度より
も大きくｚ軸の感度の低下は問題とならない。むしろ感
度の比は１に近いほど好ましい。Since the sensitivity of the acceleration sensor is inversely proportional to the total width of the beam, the sensitivity can be improved. For example,
In the case of the size of the beams 21 and 22 as shown in FIG.
The length d of the beam 21 corresponds to the length c of the beam 22 corresponding to the length direction.
4 (b), it is possible to obtain x-axis and y-axis sensitivities approximately (2a + e) / 2a times that of the conventional three-beam structure shown in FIG. However, regarding the z-axis sensitivity, the z-axis sensitivity itself decreases because the beam 22 on which the z-axis piezoresistor 25 is arranged is wide. The ratio between the x-axis and y-axis sensitivities and the z-axis sensitivity affects the distance from the flexible portion 2 to the center of gravity of the weight portion 4. For example, when a semiconductor substrate having a wafer thickness of 525 μm, which is often used in an acceleration sensor, is used, the ratio of the z-axis / x-axis is twice or more. A decrease in the sensitivity on the z-axis which is larger than the sensitivity does not pose a problem. Rather, the closer the sensitivity ratio is to 1, the better.
【００１３】（実施形態２）図５〜７は本実施形態の構
成を示す。本実施形態は実施形態１と同様にＳｉからな
る半導体基板の中心部下面に半導体加工技術を用いて重
り部４を形成し、この重り部４の上部中央に形成した連
結部３と周囲の矩形枠状の固定部１の各辺の内側中央縁
との間を薄肉の可撓部２により連結し、各可撓部２と、
重り部４の連結部３の周囲に可撓部２と重り部４を分離
する切込み溝５を形成してある。(Embodiment 2) FIGS. 5 to 7 show the configuration of this embodiment. In the present embodiment, similarly to the first embodiment, a weight portion 4 is formed on the lower surface of a central portion of a semiconductor substrate made of Si by using a semiconductor processing technique, and a connecting portion 3 formed in the upper center of the weight portion 4 and a surrounding rectangular shape. A thin flexible portion 2 connects between the inner central edges of each side of the frame-shaped fixing portion 1, and each flexible portion 2
A cut groove 5 for separating the flexible portion 2 and the weight portion 4 is formed around the connection portion 3 of the weight portion 4.
【００１４】また各可撓部２も２本の並行する梁２１
と、固定部１側の基部間を連結するように形成した別の
梁２２とにより構成されている。そして各梁２１の固定
部１との連結部位には、図５、図７に示すようにｘ軸又
はｙ軸用のピエゾ抵抗２３又は２４を形成し、別の梁２
２にはｚ軸用のピエゾ抵抗２５を形成してある。つまり
ｘ軸又はｙ軸用のピエゾ抵抗２３又は２４の形成位置が
実施形態１と相違する。Each flexible portion 2 also has two parallel beams 21.
And another beam 22 formed so as to connect between the bases on the fixed part 1 side. 5 and 7, a piezoresistor 23 or 24 for the x-axis or the y-axis is formed at a connection portion of each beam 21 with the fixing portion 1, and another beam 2 is formed.
2, a piezoresistor 25 for the z-axis is formed. That is, the formation position of the piezoresistors 23 or 24 for the x-axis or the y-axis is different from that of the first embodiment.
【００１５】而して本実施形態では、固定部１側にピエ
ゾ抵抗を配置した場合のｘ軸及びｙ軸のピエゾ抵抗２
３，２４の位置を最適化している。固定部１側にｘ軸及
びｙ軸のピエゾ抵抗２３，２４を配置することで、梁２
１上のアルミ配線等による温度変化による反りを低減す
るような構造としている。図８は本実施形態の梁２１の
ａ−ａ’断面における応力分布図である。図９のように
２本の梁２１，２１で可撓部を構成した場合、ａ−ａ’
断面の応力分布は梁２１の端部付近が固定側での最大値
となる。しかし、本実施形態のような梁構造を用いた場
合、梁２２の幅は梁２１，２１の合計幅と比較して広い
ため、梁２１の端部付近が固定側とならず、梁２１，２
１と梁２２の重なる付近が最大値となり、固定側にピエ
ゾ抵抗を配置した時の最大値となる。In this embodiment, the piezoresistors 2 on the x-axis and the y-axis when the piezoresistors are arranged on the fixed portion 1 side.
The positions of 3, 24 are optimized. The x-axis and y-axis piezoresistors 23 and 24 are arranged on the fixed part 1 side, so that the beam 2
The structure is such that warpage due to a temperature change due to the aluminum wiring or the like is reduced. FIG. 8 is a stress distribution diagram of the beam 21 of the present embodiment in a section taken along the line aa ′. When the flexible portion is constituted by the two beams 21 and 21 as shown in FIG.
The stress distribution in the cross section has a maximum value near the end of the beam 21 on the fixed side. However, when the beam structure as in the present embodiment is used, the width of the beam 22 is wider than the total width of the beams 21 and 21, so that the vicinity of the end of the beam 21 does not become the fixed side, and the beams 21 and 21 are not fixed. 2
The maximum value is in the vicinity where 1 and the beam 22 overlap, and the maximum value when the piezoresistor is arranged on the fixed side.
【００１６】従って、本実施形態の梁構造を構成するこ
とにより、ｘ軸及びｙ軸方向に対して高感度な３軸加速
度センサ実現できる。Therefore, by configuring the beam structure of this embodiment, a three-axis acceleration sensor having high sensitivity in the x-axis and y-axis directions can be realized.
【００１７】[0017]
【発明の効果】請求項１の発明では、基板の中心に作用
部と、該作用部の周辺に設けた固定部と、作用部と固定
部間に撓み可能に両端が連結された可撓部とを設けると
ともに、可撓部と作用部の間に切込み溝を形成し、可撓
部に歪により抵抗値が変化するピエゾ抵抗を設けた加速
度センサであって、可撓部を長さ方向に並行配置された
２本の梁と該２本の該梁を固定部側にて両梁間を連結す
る別の梁とで構成し、並行配置された２本の梁にｘ軸、
ｙ軸方向のピエゾ抵抗を形成し、別の梁にｚ軸方向のピ
エゾ抵抗を形成してあるので、実質的な梁の合計幅を狭
くして、感度を向上することができるという効果があ
る。According to the first aspect of the present invention, the operating portion is provided at the center of the substrate, the fixing portion provided around the operating portion, and the flexible portion having both ends connected between the operating portion and the fixing portion so as to be able to flex. And an acceleration sensor in which a notch groove is formed between the flexible portion and the action portion, and a piezo resistor whose resistance value changes due to strain is provided in the flexible portion. The two beams arranged in parallel and another beam connecting the two beams at the fixed portion side are constituted by the two beams, and the two beams arranged in parallel have the x-axis,
Since the piezoresistance in the y-axis direction is formed and the piezoresistance in the z-axis direction is formed on another beam, there is an effect that the total width of the substantial beam can be reduced and the sensitivity can be improved. .
【００１８】請求項２の発明では、請求項１の発明にお
いて、並行配置された２本の梁に対するｘ軸及びｙ軸用
のピエゾ抵抗の配置位置を、作用部側付近としたので、
請求項１の発明の効果と同様な効果がある。請求項３の
発明では、請求項１の発明において、並行配置された２
本の梁に対するｘ軸及びｙ軸用のピエゾ抵抗の配置位置
を、別の梁に対する連結部位付近としたので、請求項１
の発明の効果に加えて、よりｘ軸及びｙ軸方向に対して
高感度な３軸加速度センサ実現できる。According to the second aspect of the present invention, in the first aspect of the present invention, the positions of the piezoresistors for the x-axis and the y-axis with respect to the two beams arranged in parallel are located near the action portion side.
There is an effect similar to the effect of the first aspect of the present invention. According to a third aspect of the present invention, in the first aspect of the present invention, the two
The position of the piezoresistors for the x-axis and the y-axis with respect to one beam is set in the vicinity of a connection portion with another beam.
In addition to the effects of the invention, a three-axis acceleration sensor with higher sensitivity in the x-axis and y-axis directions can be realized.
【図１】本発明の実施形態１の上面図である。FIG. 1 is a top view of a first embodiment of the present invention.
【図２】同上の断面図である。FIG. 2 is a sectional view of the same.
【図３】（ａ）は同上の図１のＡ部位の拡大上面図であ
る。（ｂ）は同上の図１のＢ部位の拡大上面図である。FIG. 3A is an enlarged top view of a portion A in FIG. 1 of the same. FIG. 2B is an enlarged top view of a portion B in FIG.
【図４】（ａ）は同上の効果を示す説明図である。
（ｂ）は同上の効果と比較する従来例の説明図である。FIG. 4A is an explanatory view showing the same effect as above.
(B) is an explanatory view of a conventional example comparing with the effect of the above.
【図５】本発明の実施形態２の上面図である。FIG. 5 is a top view of Embodiment 2 of the present invention.
【図６】同上の断面図である。FIG. 6 is a sectional view of the same.
【図７】図５のＡ部位の拡大上面図である。FIG. 7 is an enlarged top view of a portion A in FIG. 5;
【図８】同上の応力分布説明図である。FIG. 8 is an explanatory diagram of stress distribution in the above.
【図９】同上と比較するための比較例の応力分布説明図
である。FIG. 9 is an explanatory diagram of a stress distribution of a comparative example for comparison with the above.
【図１０】従来例の上面図である。FIG. 10 is a top view of a conventional example.
【図１１】同上の断面図である。FIG. 11 is a sectional view of the same.
【図１２】同上の図１０のＡ部位の拡大上面図である。FIG. 12 is an enlarged top view of a portion A in FIG. 10 of the above.
【図１３】別の従来例の上面図である。FIG. 13 is a top view of another conventional example.
【図１４】同上の断面図である。FIG. 14 is a sectional view of the above.
【図１５】同上の図１３のＡ部位の拡大上面図である。FIG. 15 is an enlarged top view of a portion A in FIG. 13 of the above.
【図１６】他の従来例の上面図である。FIG. 16 is a top view of another conventional example.
【図１７】同上の断面図である。FIG. 17 is a sectional view of the above.
【図１８】同上の図１６のＡ部位の拡大上面図である。FIG. 18 is an enlarged top view of a portion A in FIG. 16 of the above.
１ 固定部 ２ 可撓部 ３ 連結部 ４ 重り部 ５ 切込み溝 ２１，２２ 梁部 ２３，２４，２５ ピエゾ抵抗 DESCRIPTION OF SYMBOLS 1 Fixed part 2 Flexible part 3 Connecting part 4 Weight part 5 Cut groove 21,22 Beam part 23,24,25 Piezoresistance
───────────────────────────────────────────────────── フロントページの続き (72)発明者 友成 恵昭 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 鎌倉 將有 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 岡 直正 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshiaki Tomonari 1048 Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works Co., Ltd. (72) Inventor Naomasa Oka 1048 Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works, Ltd.
Claims (3)
設けた固定部と、作用部と固定部間に撓み可能に両端が
連結された可撓部とを設けるとともに、可撓部と作用部
の間に切込み溝を形成し、可撓部に歪により抵抗値が変
化するピエゾ抵抗を設けた加速度センサであって、可撓
部を長さ方向に並行配置された２本の梁と該２本の該梁
間を固定部側にて連結する別の梁とで構成し、並行配置
された２本の梁にｘ軸、ｙ軸方向のピエゾ抵抗を形成
し、別の梁にｚ軸方向のピエゾ抵抗を形成して成ること
を特徴とする３軸加速度センサ。An operating portion provided at the center of the substrate, a fixed portion provided around the operating portion, and a flexible portion having both ends connected between the operating portion and the fixed portion so as to be flexible. An acceleration sensor in which a notch groove is formed between a portion and an action portion, and a piezoresistor whose resistance value changes due to strain is provided in the flexible portion, wherein two flexible portions are arranged in parallel in the length direction. A beam and another beam connecting the two beams at the fixed portion side are formed, and piezoresistance in the x-axis and y-axis directions is formed on the two beams arranged in parallel, and the beam is formed on another beam. A three-axis acceleration sensor characterized by forming a piezoresistance in a z-axis direction.
ｙ軸用のピエゾ抵抗の配置位置を、作用部側付近とした
ことを特徴とする請求項１記載の３軸加速度センサ。2. The three-axis acceleration sensor according to claim 1, wherein the positions of the piezoresistors for the x-axis and the y-axis with respect to the two beams arranged in parallel are in the vicinity of the action portion.
ｙ軸用のピエゾ抵抗の配置位置を、別の梁に対する連結
部位付近としたことを特徴とする請求項１記載の３軸加
速度センサ。3. The three-axis acceleration according to claim 1, wherein the positions of the piezoresistors for the x-axis and the y-axis with respect to the two beams arranged in parallel are in the vicinity of a connection portion with another beam. Sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06060998A JP3330074B2 (en) | 1998-02-24 | 1998-02-24 | 3-axis acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06060998A JP3330074B2 (en) | 1998-02-24 | 1998-02-24 | 3-axis acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11242050A true JPH11242050A (en) | 1999-09-07 |
| JP3330074B2 JP3330074B2 (en) | 2002-09-30 |
Family
ID=13147184
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06060998A Expired - Fee Related JP3330074B2 (en) | 1998-02-24 | 1998-02-24 | 3-axis acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3330074B2 (en) |
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