JPH11238840A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPH11238840A
JPH11238840A JP3768498A JP3768498A JPH11238840A JP H11238840 A JPH11238840 A JP H11238840A JP 3768498 A JP3768498 A JP 3768498A JP 3768498 A JP3768498 A JP 3768498A JP H11238840 A JPH11238840 A JP H11238840A
Authority
JP
Japan
Prior art keywords
film
alloy
lead frame
base material
alloy film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3768498A
Other languages
Japanese (ja)
Inventor
Manabu Honda
学 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3768498A priority Critical patent/JPH11238840A/en
Publication of JPH11238840A publication Critical patent/JPH11238840A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To raise the reliability of a bonding of lead parts in a semiconductor device to a packaging board, such as a printed wiring board, without using a Pb film by a method wherein a Pd film formed on the surface of an Sn-Ni alloy film consisting of an Sn film and an Ni film is formed on the surface of a base material consisting of a Cu material. SOLUTION: A lead frame base material 10 is constituted of a Cu material. An Sn-Ni alloy film 12 containing 50 wt.% of Sn is formed on the surface of the base material 10 in a chickness of 1 to 2 μm of thereabouts by plating and moreover, a Pd film 14 is formed on the surface of the film 12 in a thickness of 0.1 μm or thereabouts by plating. In such a way, by providing the film 12 between the base material 10 and the film 14, the good adhesiveness of the Pd film 14 to the base material 10 is ensured. As a result, the corrosion resistance and wear resistance of a lead frame can be enhanced. Accordingly, the reliability of a bonding of lead parts in a semiconductor device to a packaging board can be enhanced. Moreover, in the case where the alloy film 12 is formed on the surface of the base material as a base film, the better adhesiveness of the film 12 is obtained than the case where an Ni film is formed on the surface of the base material in the same film thickness as that of the alloy film as a base film.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、リードフレームに
関し、特に、Pdよりなる金属膜またはPdを含む合金
よりなる金属膜が施されたリードフレームに関するもの
である。
The present invention relates to a lead frame, and more particularly to a lead frame provided with a metal film made of Pd or a metal film made of an alloy containing Pd.

【0002】[0002]

【従来の技術】一般に、半導体素子が装着されるリード
フレームは、図6に示したように、中央に半導体素子を
載置するダイパッド40が連結されたダイパッドサポー
ト44と、複数のリード部(インナーリード42aとア
ウターリード42bとから構成されている。)とをフレ
ーム部46により一体化して複数個連結した金属製のリ
ボンで構成されている。このリードフレームには、電流
の導通作用の他に、放熱作用や、構造保持等の役割があ
り、これらのことから電気伝導率や熱伝導率の高いFe
素材やCu素材(Cuと微量の他の金属成分からなる金
属)が用いられ、目的に応じて選択されている。
2. Description of the Related Art In general, as shown in FIG. 6, a lead frame on which a semiconductor element is mounted has a die pad support 44 to which a die pad 40 on which a semiconductor element is mounted is connected to a center, and a plurality of lead portions (inner parts). And a plurality of outer leads 42b) and a plurality of metal ribbons. This lead frame has a role of heat dissipation, structure retention, and the like, in addition to a current conduction function. From these facts, the lead frame has a high electric conductivity and a high heat conductivity.
A material or a Cu material (a metal composed of Cu and a trace amount of another metal component) is used, and is selected according to the purpose.

【0003】従来より半導体装置は、リードフレームに
半導体素子を搭載して樹脂やセラミックで封止し、半導
体装置の外部端子となるアウターリードをフレームから
分離した後、メッキ或いはコーティングによりSnまた
はSn−Pb合金膜を設けることにより接合信頼性を向
上させ、アウターリードを所望の形状となるように折り
曲げることにより製造されている。この様な半導体装置
は、端子部が実装基板の接合端子部に半田付けされて実
装される。
Conventionally, in a semiconductor device, a semiconductor element is mounted on a lead frame, sealed with resin or ceramic, an outer lead serving as an external terminal of the semiconductor device is separated from the frame, and then Sn or Sn- is plated or coated. By providing a Pb alloy film, bonding reliability is improved, and the outer lead is manufactured by bending the outer lead into a desired shape. Such a semiconductor device is mounted by soldering a terminal portion to a joint terminal portion of a mounting board.

【0004】近年、環境や人体に対する影響を考慮して
Pbを用いない方法が提案されており、その中でも予め
リードフレームにPd膜を形成してから半導体装置を組
み立てることにより端子部表面にSnまたはSn−Pb
合金膜を形成させる必要のない方法が脚光を浴びてい
る。
In recent years, methods that do not use Pb in consideration of the influence on the environment and the human body have been proposed. Among them, a method in which a Pd film is formed on a lead frame in advance and then a semiconductor device is assembled to form Sn or Sn on the surface of a terminal portion. Sn-Pb
Methods that do not require the formation of an alloy film have been spotlighted.

【0005】この方法でCu素材を用いる場合には、図
7に示したように、Cu素材60の表面に局部電池の発
生を抑えるバリアメタルとして膜厚1μm程度のNi膜
70をメッキにより形成してから、膜厚0.1μm程度
のPd膜64を形成した二膜の金属膜を形成する方法
や、図8に示したように、Cu素材60の表面にメッキ
により膜厚1μm程度ののNi膜62と膜厚0.1μm
のPd膜64とを形成した後に膜厚数nmのAu膜66
を形成してさらにリード部と基板との接合信頼性を向上
させたものが提案されている。
When a Cu material is used in this method, as shown in FIG. 7, a Ni film 70 having a film thickness of about 1 μm is formed on the surface of the Cu material 60 as a barrier metal for suppressing generation of a local battery by plating. Then, a method of forming two metal films on which a Pd film 64 having a thickness of about 0.1 μm is formed, or as shown in FIG. Film 62 and thickness 0.1 μm
Au film 66 having a thickness of several nm after forming the Pd film 64
Have been proposed to further improve the bonding reliability between the lead portion and the substrate.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、Pdや
Auは高価であり、あまり膜を厚く形成するとコストが
掛かるという難点がある。
However, Pd and Au are expensive, and there is a problem that the cost is increased if the film is formed too thick.

【0007】また、プリント配線板などの実装基板との
接合信頼性(または実装信頼性)においても、Snまた
はSn−Pb合金を用いた場合と比べて劣るという欠点
がある。さらに、半導体装置製造工程中における端子部
の折り曲げ工程において、端子部表面のAu膜などの耐
食性の良い金属膜が剥がれて、端子部が部分的に腐食が
進んでしまい、接合信頼性を損ねる場合がある。
[0007] Further, there is a defect that the bonding reliability (or mounting reliability) with a mounting substrate such as a printed wiring board is inferior to the case of using Sn or Sn-Pb alloy. Further, in a bending process of a terminal portion in a semiconductor device manufacturing process, a metal film having good corrosion resistance such as an Au film on the surface of the terminal portion is peeled off, and the terminal portion is partially corroded, thereby impairing bonding reliability. There is.

【0008】また、Pd膜をFe素材の基材に設けた場
合、Cu素材の基材に設けた場合と比較して密着性、お
よび耐食性が悪く劣化か速いため、Niを42wt%含
む42アロイ材等のFe素材の基材には、Pd膜を設け
ることができないという難点もある。
Further, when the Pd film is provided on the base material made of Fe material, the adhesion and the corrosion resistance are poor and the deterioration is faster than when the Pd film is provided on the base material made of Cu material. There is also a disadvantage that a Pd film cannot be provided on a base material made of an Fe material such as a material.

【0009】以上のことから本発明は、Pbを使用せず
に、半導体装置のリード部とプリント配線板などの実装
基板との接合信頼性(または実装信頼性)を向上したリ
ードフレームを提供することを第1の目的とする。ま
た、製造コストを抑えることができるリードフレームを
提供することを第2の目的とする。さらに、Pdまたは
Pd合金よりなる膜をを表面に備え、基材としてCu素
材を用いた場合はもちろんFe素材を用いた場合であっ
ても良好な膜密着性及び耐食性を有するリードフレーム
を提供することも第3の目的とする。
In view of the above, the present invention provides a lead frame having improved bonding reliability (or mounting reliability) between a lead portion of a semiconductor device and a mounting substrate such as a printed wiring board without using Pb. This is the first object. A second object is to provide a lead frame that can reduce the manufacturing cost. Further, the present invention provides a lead frame provided with a film made of Pd or a Pd alloy on its surface and having good film adhesion and corrosion resistance even when using a Cu material as well as an Fe material as a base material. This is also a third object.

【0010】[0010]

【課題を解決するための手段】上記第1の目的を達成す
るために、請求項1の発明のリードフレームは、Cu素
材からなる基材と、前記基材の表面に形成されSnとN
iとからなるSn−Ni合金膜と、前記Sn−Ni合金
膜の表面に形成されPd膜または表面にAu膜が形成さ
れたPd膜と、を備えている。
In order to achieve the first object, a lead frame according to the first aspect of the present invention comprises a substrate made of a Cu material, and Sn and N formed on the surface of the substrate.
i) and a Pd film formed on the surface of the Sn—Ni alloy film or a Pd film formed with an Au film on the surface.

【0011】上記Sn−Ni合金膜はレベリング効果が
ないため、表面に微少な凹凸が形成されやすく、この微
少な凹凸によるアンカー効果によって密着力が高くな
る。そのため、Sn−Ni合金からなる膜を、リードフ
レームの基材であるCu素材とPd膜、または表面にA
u膜が形成されたPd膜との間に設けることにより、基
材の表面とPd膜との両方に対してSn−Ni合金膜が
良好に密着してPd膜の剥離を防ぐ働きをする。従っ
て、実装基板の接合信頼性を向上したリードフレームを
提供することができる。
Since the Sn—Ni alloy film has no leveling effect, minute irregularities are easily formed on the surface, and the adhesion effect is increased by the anchor effect due to the minute irregularities. Therefore, a film made of an Sn—Ni alloy is coated with a Cu material and a Pd film, which are base materials of a lead frame, or A
By providing the Pd film between the Pd film and the u film, the Sn—Ni alloy film adheres well to both the surface of the base material and the Pd film, and functions to prevent the Pd film from peeling. Therefore, it is possible to provide a lead frame with improved bonding reliability of the mounting substrate.

【0012】また、Sn−Ni合金からなる膜を用いて
いることからPd膜が剥離する厚さ分を考慮してPd膜
の膜厚を厚くする必要がないため、Pd膜の膜厚を薄く
しても、従来と同様の接合信頼性を得ることができる。
従って、材料コストを低くできるという利点がある。ま
た、表面にPd膜が良好に維持されることとなるので、
十分に良好な耐食性および耐摩耗性を確保できる。さら
に、Pd膜の表面にAu膜を設ける場合では、Au膜の
膜厚も薄くすることができるのでその分コストを低くで
きる。
Further, since the film made of the Sn—Ni alloy is used, it is not necessary to increase the thickness of the Pd film in consideration of the thickness of the Pd film peeling off. Even in this case, the same joining reliability as that of the related art can be obtained.
Therefore, there is an advantage that the material cost can be reduced. Also, since the Pd film is favorably maintained on the surface,
Sufficiently good corrosion resistance and wear resistance can be secured. Further, when an Au film is provided on the surface of the Pd film, the thickness of the Au film can be reduced, so that the cost can be reduced accordingly.

【0013】なお、Sn−Ni合金膜の表面に設けたP
d膜が何らかの理由で剥離したり、クラックが生じた場
合であってもSn−Ni合金膜はNi膜よりも耐食性お
よび耐摩耗性が優れているため、従来のNi膜を施した
場合と比較して端子の寿命を延ばすことができる。
[0013] It is to be noted that P on the surface of the Sn-Ni alloy film
Even if the d film is peeled off or cracked for some reason, the Sn-Ni alloy film has better corrosion resistance and wear resistance than the Ni film, so that it is compared with the case where the conventional Ni film is applied. As a result, the life of the terminal can be extended.

【0014】また、Sn−Ni合金は、標準電極電位
が、基材を構成するCu素材の標準電極電位とPdの標
準電極電位との中間の値であるので、Sn−Ni合金か
らなる膜を、リードフレームの基材であるCu素材とP
d膜との間、またはCu素材と表面にAu膜が形成され
たPd膜との間に設けることにより、基材とSn−Ni
合金膜との間、及びSn−Ni合金膜とPd膜、または
表面にAu膜が形成されたPd膜との間における局部電
池の発生が抑えられ、これに起因して生じる腐食を抑え
ることができる。したがって、リードフレームの寿命が
従来よりも長くでき、半導体装置の端子部の接合信頼性
を長い期間確保できる。
Further, since the standard electrode potential of the Sn—Ni alloy is an intermediate value between the standard electrode potential of the Cu material constituting the base material and the standard electrode potential of Pd, the film made of the Sn—Ni alloy is , Cu material which is the base material of lead frame and P
By providing between the Cu film and the Cu material and the Pd film having the Au film formed on the surface, the base material and the Sn—Ni
The occurrence of local batteries between the alloy film and between the Sn—Ni alloy film and the Pd film or the Pd film having the Au film formed on the surface is suppressed, and the corrosion caused by this is suppressed. it can. Therefore, the life of the lead frame can be made longer than before, and the bonding reliability of the terminal portion of the semiconductor device can be secured for a long period.

【0015】また、請求項2の発明のリードフレーム
は、Cu素材からなる基材と、前記基材の表面に形成さ
れNi膜またはSnとNiとからなるSn−Ni合金膜
からなる下地膜と、前記下地膜の表面に形成されPdと
AuとからなるPd−Au合金膜と、を備えている。
According to a second aspect of the present invention, there is provided a lead frame, comprising: a base material made of a Cu material; and a base film made of a Ni film or a Sn—Ni alloy film made of Sn and Ni formed on the surface of the base material. A Pd-Au alloy film formed of Pd and Au and formed on the surface of the base film.

【0016】すなわち、請求項2の発明では、PdとA
uとをPd−Au合金膜として同じ膜内に含む構成とす
ることにより、端子折り曲げ工程などでPd−Au合金
膜が多少剥がれても残留したPd−Au合金膜内には耐
食性及び耐摩耗性が良好なAuも含まれることとなる。
そのため、Pd膜とAu膜とを重ねて形成したときに最
表面となるAu膜が剥がれた場合と比べて、十分にその
接合信頼性を確保できる。また、膜形成処理工程がPd
膜とAu膜とを重ねて形成する場合と比べて少ないので
その分のコストを抑えることができるという利点もあ
る。
That is, according to the invention of claim 2, Pd and A
is contained in the same film as the Pd-Au alloy film, so that even if the Pd-Au alloy film is slightly peeled off in the terminal bending step or the like, the remaining Pd-Au alloy film has corrosion resistance and wear resistance. Is good.
Therefore, when the Pd film and the Au film are formed to overlap with each other, the bonding reliability can be sufficiently ensured as compared with the case where the Au film serving as the outermost surface is peeled off. Further, when the film forming process is performed using Pd
There is also an advantage that the cost can be reduced because it is smaller than in the case where the film and the Au film are formed in an overlapping manner.

【0017】また、Sn−Ni合金膜をPd−Au合金
膜の下地膜として設ける場合では、上記請求項1におい
て説明したように接合信頼性を向上することができると
共に、接合信頼性を従来と同程度とする場合にPd−A
u合金膜の膜厚を従来のPd膜及びAu膜の合計の膜厚
よりも薄くすることができるので材料コストが抑えられ
るという利点もある。
In the case where the Sn—Ni alloy film is provided as a base film of the Pd—Au alloy film, the bonding reliability can be improved as described in claim 1 and the bonding reliability can be improved. Pd-A for similar
Since the thickness of the u alloy film can be made smaller than the total thickness of the conventional Pd film and Au film, there is also an advantage that the material cost can be reduced.

【0018】さらに、請求項3の発明のリードフレーム
は、Fe素材またはCu素材からなる基材と、前記基材
の表面に形成されCuとSnとからなるCu−Sn合金
膜と、前記Cu−Sn合金膜の表面に形成されSnとN
iとからなるSn−Ni合金膜またはNi膜からなる下
地膜と、Pd−Au合金膜、Pd膜、及び表面にAu膜
を備えたPd膜の何れか1つの膜と、を備えている。
Further, the lead frame of the invention according to claim 3 is a lead frame made of Fe material or Cu material, a Cu—Sn alloy film made of Cu and Sn formed on the surface of the base material, Sn and N formed on the surface of the Sn alloy film
The substrate includes a base film made of a Sn—Ni alloy film or a Ni film made of i, and one of a Pd—Au alloy film, a Pd film, and a Pd film having an Au film on its surface.

【0019】すなわち、請求項3の発明では、リードフ
レームの基材を構成するFe素材及びCu素材と、リー
ドフレームの最表面となる膜(すなわち、Pd−Au合
金膜または、Pd膜または、表面にAu膜を備えたPd
膜)との間に、Sn−Ni合金膜またはNi膜からなる
下地膜を設けることに加えて、標準電極電位が前記基材
と前記下地膜との間の値を持つCu−Sn合金からなる
膜を設けているので、基材とCu−Sn合金膜との間、
下地膜としてSn−Ni合金膜を用いた場合ではSn−
Ni合金膜とCとu−Sn合金膜との間、下地膜として
Ni膜を用いた場合ではNi膜とCu−Sn合金膜との
間、の標準電極電位差がそれぞれCu−Sn合金膜を設
けずに基材表面に下地膜を設けた場合の標準電極電位差
に比較して小さくなる。これにより、基材と下地膜との
間での局部電流の発生が抑えられ、これに起因する腐食
が防止されて耐食性を高めることができる。
That is, according to the third aspect of the present invention, the Fe material and the Cu material constituting the base material of the lead frame, and the film (ie, the Pd—Au alloy film or the Pd film or the surface) to be the outermost surface of the lead frame. Pd with Au film
In addition to providing a base film made of a Sn—Ni alloy film or a Ni film between the base film and the base film, the standard electrode potential is made of a Cu—Sn alloy having a value between the base material and the base film. Since the film is provided, between the substrate and the Cu-Sn alloy film,
When the Sn—Ni alloy film is used as the base film,
The standard electrode potential difference between the Ni alloy film and C and the u-Sn alloy film, and between the Ni film and the Cu-Sn alloy film when the Ni film is used as the base film, is Cu-Sn alloy film. The potential difference becomes smaller than the standard electrode potential difference when a base film is provided on the surface of the base material. As a result, generation of a local current between the base material and the base film is suppressed, corrosion due to this is prevented, and corrosion resistance can be improved.

【0020】特に、Cu素材よりも下地膜との標準電極
電位差の大きいFe素材を基材とした場合に、Fe素材
とSn−Ni合金膜との間の異種金属接触部、またはF
e素材とNi膜との間の異種金属接触部での標準電極電
位差が局部電池の発生を抑える範囲内となるので、従来
では電気的な腐食が激しくて設けることのできなかった
42アロイ材などのFe素材の基材に対してもPd膜や
Pd−Au合金膜等のPdを含む金属を設けることがで
きる。そのため、Fe素材の基材の使用可能範囲を従来
よりも広げることができる。
In particular, when an Fe material having a larger standard electrode potential difference from a base film than a Cu material is used as a base material, a dissimilar metal contact portion between the Fe material and the Sn—Ni alloy film, or F
Since the standard electrode potential difference at the dissimilar metal contact portion between the e-material and the Ni film is within a range that suppresses the generation of a local battery, 42 alloy materials and the like which could not be provided due to severe electric corrosion in the past. A Pd-containing metal such as a Pd film or a Pd-Au alloy film can be provided on the Fe base material. Therefore, the usable range of the base material of the Fe material can be expanded as compared with the related art.

【0021】また、下地膜としてSn−Ni合金膜を選
択すれば、請求項1と同様に、接合信頼性を向上させる
ことができると共に、接合信頼性を向上する場合に最表
面に設けられる膜の膜厚を従来より薄くできるという利
点がある。また、最表面に設ける膜としてPd−Au合
金膜を選択すれぱ、請求項2と同様に、Pd膜とAu膜
とを重ねて形成する場合に比べて耐食性および耐摩耗性
が保持され、十分にその接合信頼性を確保することがで
きる。
If the Sn—Ni alloy film is selected as the underlayer, the bonding reliability can be improved as in the first aspect, and the film provided on the outermost surface when the bonding reliability is improved. There is an advantage that the film thickness can be made thinner than before. Further, if a Pd-Au alloy film is selected as the film provided on the outermost surface, corrosion resistance and abrasion resistance are maintained as compared with the case where the Pd film and the Au film are formed in an overlapping manner as in claim 2, and sufficient Thus, the bonding reliability can be ensured.

【0022】[0022]

【発明の実施の形態】以下、本発明の実施形態を図1か
ら図5を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

【0023】(第1の実施形態)図1に示したリードフ
レーム基材10は、Cu素材(Cuと10wt%程度の
微量の他の金属成分からなる金属)より構成されてい
る。本第1の実施形態では、リードフレーム基材10の
表面にSnを50wt%含有するSn−Ni合金膜12
をメッキにより1〜2μm程度施し、さらにその表面に
Pd膜14をメッキにより0.1μm程度施している。
(First Embodiment) The lead frame base material 10 shown in FIG. 1 is made of a Cu material (a metal comprising Cu and a trace amount of another metal component of about 10 wt%). In the first embodiment, the Sn—Ni alloy film 12 containing 50 wt% of Sn is formed on the surface of the lead frame base material 10.
Of about 1 to 2 μm by plating, and a Pd film 14 is applied to the surface by about 0.1 μm by plating.

【0024】本第1の実施形態では、リードフレーム基
材10とPd膜14との間にSn−Ni合金膜12を設
けることにより、良好な密着性を確保しているので、耐
食性および耐摩耗性を向上でき、従って実装基板との接
合信頼性を向上することができる。
In the first embodiment, since the Sn—Ni alloy film 12 is provided between the lead frame base material 10 and the Pd film 14, good adhesion is ensured. And the reliability of bonding with the mounting board can be improved.

【0025】下地膜としてSn−Ni合金膜12を施し
た場合、下地膜としてNi膜をSn−Ni合金膜12と
同じ膜厚に施すよりも良好な膜密着性が得られる。その
ため、Sn−Ni合金膜12の膜厚を1〜2μm程度と
した場合、Pd膜14の膜厚を従来より薄くしても従来
と同程度の接合信頼性を得ることが可能である。すなわ
ち、Pd膜の剥離する厚さ分を考慮して膜厚を厚くしな
くても従来と同程度の接合信頼性が得られるのでその分
Pd膜の膜厚を薄くすることができ、材料コストを低く
できる。
When the Sn—Ni alloy film 12 is applied as the base film, better film adhesion is obtained than when the Ni film is used as the base film to have the same thickness as the Sn—Ni alloy film 12. Therefore, when the thickness of the Sn—Ni alloy film 12 is about 1 to 2 μm, even if the thickness of the Pd film 14 is made thinner than before, it is possible to obtain the same bonding reliability as before. That is, even if the thickness of the Pd film is not taken into consideration in consideration of the thickness of the Pd film to be peeled off, the same bonding reliability as that of the related art can be obtained. Can be lowered.

【0026】(第2の実施形態)図2は、第1の実施形
態で示したリードフレームの表面膜であるPd膜の表面
に厚さ数nmのAu膜16を形成した構成のリードフレ
ームを示している。この構成の場合、Sn−Ni合金膜
12の良好な耐食性および耐摩耗性とAu膜の耐食性と
によって接合信頼性をさらに向上することができる。
(Second Embodiment) FIG. 2 shows a lead frame having a structure in which an Au film 16 having a thickness of several nm is formed on the surface of a Pd film which is a surface film of the lead frame shown in the first embodiment. Is shown. In the case of this configuration, the joint reliability can be further improved by the good corrosion resistance and wear resistance of the Sn—Ni alloy film 12 and the corrosion resistance of the Au film.

【0027】また、Sn−Ni合金膜12の膜厚を1〜
2μm程度とした場合、Pd膜14の膜厚を薄くしても
従来と同程度の接合信頼性を得ることができる。すなわ
ち、Pd膜及びAu膜の剥離する厚さ分を考慮して膜厚
を厚くしなくても従来と同程度の接合信頼性が得られる
ので、高価なPd膜14及びAu膜16の膜厚を薄くで
きでき、コストを抑えることができる。
The thickness of the Sn—Ni alloy film 12 is 1 to
When the thickness is about 2 μm, even if the thickness of the Pd film 14 is reduced, the same bonding reliability as that of the related art can be obtained. That is, even if the thickness of the Pd film and the Au film is not taken into consideration in consideration of the thickness of the Pd film and the Au film to be separated, the same bonding reliability as that of the related art can be obtained. Can be made thinner, and costs can be reduced.

【0028】(第3の実施形態)図3に示したリードフ
レーム基材10は、Cu素材により構成されている。本
第3の実施形態では、リードフレーム基材10の表面に
Ni膜20をメッキにより1〜2μm程度施し、さらに
その表面に厚さ0.1μmのAuを少なくとも10wt
%含有するPd−Au合金膜18をメッキにより施して
いる。
(Third Embodiment) The lead frame substrate 10 shown in FIG. 3 is made of a Cu material. In the third embodiment, a Ni film 20 is applied to the surface of the lead frame base material 10 by plating to a thickness of about 1 to 2 μm, and Au having a thickness of 0.1 μm is coated on the surface by at least 10 wt.
% Pd-Au alloy film 18 is applied by plating.

【0029】この構成によれば、PdとAuとをPd−
Au合金膜18として同時に形成しているため、端子折
り曲げ工程などでPd−Au合金膜18の表膜部分が多
少剥がれてもリードフレーム基材に密着して残っている
膜にはPdもAuも含まれる。そのため、Pd膜14と
Au膜16とを重ねて形成する場合に最表面となるAu
膜16が剥がれた場合と比べて耐食性および耐摩耗性を
良好に維持でき、十分にその接合信頼性を確保すること
ができる。
According to this configuration, Pd and Au are converted to Pd-
Since the Pd-Au alloy film 18 is formed at the same time as the Au alloy film 18, even if the surface film portion of the Pd-Au alloy film 18 is slightly peeled off in the terminal bending step or the like, neither Pd nor Au is attached to the film remaining in close contact with the lead frame base material. included. Therefore, when the Pd film 14 and the Au film 16 are formed so as to overlap with each other, Au which is the outermost surface is formed.
Corrosion resistance and abrasion resistance can be maintained better than when the film 16 is peeled off, and the bonding reliability thereof can be sufficiently ensured.

【0030】もちろん、Pd膜14とAu膜16とを重
ねて形成する場合は2工程の膜形成工程が必要である
が、本第3実施例のようにPdとAuとをPd−Au合
金膜18として同時に形成する場合は1工程で済むので
その分のコストを抑えることができるという利点もあ
る。
Needless to say, when the Pd film 14 and the Au film 16 are formed to overlap each other, two film forming steps are necessary. However, as in the third embodiment, Pd and Au are converted to a Pd-Au alloy film. In the case where they are formed simultaneously as 18, there is also an advantage that the cost can be reduced because only one process is required.

【0031】(第4の実施形態)図4は、第3の実施形
態で示したリードフレームにおいてNi膜20の代わり
に厚さ1〜2μm程度のSnを50wt%含有するSn
−Ni合金膜12をメッキにより施したものである。こ
の構成の場合は、上記第3の実施形態で得られる効果に
加えて、Sn−Ni合金膜12の良好な耐食性および耐
摩耗性によってSn−Ni合金膜12の表面のPd−A
u合金膜18の膜厚を薄くしても従来と同程度の接合信
頼性を得ることができる。
(Fourth Embodiment) FIG. 4 shows the lead frame shown in the third embodiment in which Sn having a thickness of about 1 to 2 μm and containing 50 wt% of Sn is used instead of the Ni film 20.
-The Ni alloy film 12 is formed by plating. In the case of this configuration, in addition to the effects obtained in the third embodiment, the Pd-A of the surface of the Sn—Ni alloy film 12 is improved due to the good corrosion resistance and wear resistance of the Sn—Ni alloy film 12.
Even if the thickness of the u-alloy film 18 is reduced, it is possible to obtain the same level of bonding reliability as the conventional one.

【0032】すなわち、Pd膜の剥離する厚さ分を考慮
して膜厚を厚くしなくても従来と同程度の接合信頼性が
得られるのでその分Pd膜の膜厚を薄くすることがで
き、材料コストを低くできる。
That is, even if the thickness of the Pd film is not increased in consideration of the thickness of the Pd film to be peeled off, the same bonding reliability as that of the related art can be obtained, so that the thickness of the Pd film can be reduced accordingly. The material cost can be reduced.

【0033】(第5の実施形態)図5に示したリードフ
レーム基材30は、Fe素材としてNiを42wt%の
含むFe−Ni合金、すなわち、42アロイ材により構
成されている。本第5の実施形態では、リードフレーム
基材30の表面に、厚さ1〜3μm程度のCu−Sn合
金膜32と、その表面に厚さ1〜2μm程度のSnを5
0wt%含有するSn−Ni合金膜12とをメッキによ
り施し、さらにその表面にAuを少なくとも10wt%
Pd−Au合金膜18を厚さ0.1μm程度となるよう
にメッキにより施している。
(Fifth Embodiment) The lead frame base material 30 shown in FIG. 5 is made of an Fe--Ni alloy containing 42 wt% of Ni as an Fe material, that is, a 42 alloy material. In the fifth embodiment, a Cu—Sn alloy film 32 having a thickness of about 1 to 3 μm is formed on the surface of the lead frame base material 30 and Sn having a thickness of about 1 to 2 μm is formed on the surface.
A Sn—Ni alloy film 12 containing 0 wt% is applied by plating, and Au is further coated on the surface with at least 10 wt%.
The Pd-Au alloy film 18 is applied by plating so as to have a thickness of about 0.1 μm.

【0034】リードフレーム基材30とSn−Ni合金
膜12との間に設けたCu−Sn合金膜32により、リ
ードフレーム基材30とCu−Sn合金膜32との間及
びSn−Ni合金膜12とCu−Sn合金膜32との間
での標準電極電位差が小さくなるので局部電流の発生が
抑えられ、これに起因する腐食が防止されて耐食性が高
まる。
The Cu—Sn alloy film 32 provided between the lead frame substrate 30 and the Sn—Ni alloy film 12 allows the lead frame substrate 30 and the Cu—Sn alloy film 32 and the Sn—Ni alloy film Since the standard electrode potential difference between the second electrode 12 and the Cu—Sn alloy film 32 becomes smaller, generation of local current is suppressed, corrosion caused by this is prevented, and corrosion resistance is increased.

【0035】また、下地膜としてSn−Ni合金膜12
を用いているので接合信頼性を向上でき、Sn−Ni合
金膜12の表面のPd−Au合金膜18の膜厚を薄くし
ても従来と同程度の接合信頼性が得られるので、コスト
を低減することができる。
The Sn—Ni alloy film 12 is used as a base film.
Is used, the joining reliability can be improved, and even if the thickness of the Pd-Au alloy film 18 on the surface of the Sn-Ni alloy film 12 is reduced, the same joining reliability as that of the related art can be obtained. Can be reduced.

【0036】さらに、最表面にPd−Au合金膜18を
設けているため、端子折り曲げ工程などでPd−Au合
金膜18の表膜部分が多少剥がれても耐食性および耐摩
耗性を良好に維持でき、十分にその接合信頼性を確保す
ることができる。もちろんPd−Au合金膜としてPd
とAuとを同じ膜内に形成するため、膜形成工程が1工
程で済むのでその分のコストを抑えることができるとい
う利点もある。
Further, since the Pd-Au alloy film 18 is provided on the outermost surface, even if the surface film portion of the Pd-Au alloy film 18 is slightly peeled off in a terminal bending step or the like, the corrosion resistance and wear resistance can be maintained well. , The joint reliability can be sufficiently ensured. Of course, Pd as a Pd-Au alloy film
Since Au and Au are formed in the same film, there is also an advantage that the film formation process can be performed in one step, and the cost can be reduced accordingly.

【0037】なお、この実施形態において特定の比率の
Cu−Sn合金に対するSn−Ni合金の比率およびP
d−Au合金の比率の組み合わせについては限定的では
なく、熱膨張率等を考慮して必要に応じ比率と組み合わ
せとを適宜選択することができる。
In this embodiment, the ratio of Sn—Ni alloy to Cu—Sn alloy at a specific ratio and P
The combination of the ratios of the d-Au alloy is not limited, and the ratio and the combination can be appropriately selected as necessary in consideration of the coefficient of thermal expansion and the like.

【0038】さらに、第5の実施形態では基材としてF
e素材である42アロイ材を用いたが他のFe素材を用
いても良い。また、別の基材として上述した第1から第
4の実施形態のように、Cu素材を用いることもでき
る。
Further, in the fifth embodiment, F
Although a 42 alloy material as the e material was used, another Fe material may be used. Further, as another base material, a Cu material can be used as in the above-described first to fourth embodiments.

【0039】また、第5の実施形態では、42アロイ材
よりなる基材にPd−Au合金膜を施す場合に、基材の
表面にCu−Sn合金膜、Cu−Sn合金膜の表面にS
n−Ni合金膜を施してからPd−Au合金膜を施して
いるが、この他の構成として、42アロイ材よりなる基
材の表面に1μm程度のCu−Sn合金膜、1μm程度
のNi膜、0.1μm程度のPd−Au合金膜をメッキ
により設けるようにしてもよい。
In the fifth embodiment, when a Pd-Au alloy film is formed on a base made of a 42 alloy material, a Cu-Sn alloy film is formed on the surface of the base material, and an Sd alloy is formed on the surface of the Cu-Sn alloy film.
The Pd-Au alloy film is applied after the n-Ni alloy film is applied. However, as another configuration, a Cu-Sn alloy film of about 1 μm and a Ni film of about 1 μm are formed on a surface of a base material made of a 42 alloy material. , A Pd-Au alloy film of about 0.1 μm may be provided by plating.

【0040】また、42アロイ材よりなる基材の表面に
1μm程度のCu−Sn合金膜、1μm程度のNi膜、
0.1μm程度のPd膜をメッキにより設けるようにし
ても、42アロイ材に1μm程度のCu−Sn合金膜、
1μm程度のNi膜、0.1μm程度のPd膜、数nm
のAu膜をメッキにより設けるようにしてもよい。
A Cu—Sn alloy film of about 1 μm, a Ni film of about 1 μm,
Even if a Pd film of about 0.1 μm is provided by plating, a Cu-Sn alloy film of about 1 μm
Ni film of about 1 μm, Pd film of about 0.1 μm, several nm
May be provided by plating.

【0041】さらに、42アロイ材に1μm程度のCu
−Sn合金膜、1μm程度のSn−Ni合金膜、0.1
μm程度のPd膜をメッキにより設けるようにしても、
42アロイ材に1μm程度のCu−Sn合金膜、1μm
程度のSn−Ni合金膜、0.1μm程度のPd膜、数
nmのAu膜をメッキにより設けるようにしてもよい。
Further, about 42 μm of Cu
-Sn alloy film, Sn-Ni alloy film of about 1 μm, 0.1
Even if a Pd film of about μm is provided by plating,
42 alloy material, Cu-Sn alloy film of about 1 m, 1 m
An Sn—Ni alloy film of about 0.1 μm, a Pd film of about 0.1 μm, and an Au film of several nm may be provided by plating.

【0042】なお、以上説明した第1の実施形態から第
5の実施形態において、Cu素材としては、銅と微量の
金属成分からなる合金であればよく、例えば、CuとZ
rとからなるCu−Zr合金や、CuとZnとからなる
Cu−Zn合金などが挙げられる。
In the first to fifth embodiments described above, the Cu material may be an alloy composed of copper and a trace amount of a metal component.
and a Cu-Zr alloy composed of Cu and Zn, and the like.

【0043】なお、上記第1、第2、第4及び第5の実
施形態ではSn−Ni合金膜12を構成するSn−Ni
合金として、Snを50wt%含有するSn−Ni合金
を使用しているが、この組成のSn−Ni合金に限ら
ず、Snを30〜70wt%程度含有するSn−Ni合
金を使用できる。
In the first, second, fourth and fifth embodiments, the Sn—Ni alloy film 12
Although an Sn—Ni alloy containing 50 wt% of Sn is used as the alloy, the present invention is not limited to the Sn—Ni alloy having this composition, and an Sn—Ni alloy containing about 30 to 70 wt% of Sn can be used.

【0044】また、上記第3、第4及び第5の実施形態
ではPd−Ni合金膜18を構成するPd−Au合金と
して、Auを少なくとも10wt%含有するPd−Au
合金を使用しているが、この組成のPd−Au合金に限
らず、Pdを30〜70wt%程度含有するPd−Au
合金を使用できる。
In the third, fourth, and fifth embodiments, the Pd—Au alloy constituting the Pd—Ni alloy film 18 is a Pd—Au alloy containing at least 10 wt% of Au.
Although an alloy is used, the present invention is not limited to a Pd-Au alloy having this composition, but a Pd-Au alloy containing Pd in an amount of about 30 to 70 wt%.
Alloys can be used.

【0045】[0045]

【発明の効果】以上説明したように、請求項1の発明に
よれば、基材の表面とPd膜との両方に対してSn−N
i合金膜が良好に密着してPd膜が剥がれ落ちるのを防
ぐので接合信頼性を向上することができる、という効果
がある。
As described above, according to the first aspect of the present invention, Sn-N is applied to both the surface of the substrate and the Pd film.
This prevents the Pd film from peeling off due to good adhesion of the i-alloy film, thereby improving the bonding reliability.

【0046】また、請求項2の発明によれば、端子折り
曲げ工程などでPd−Au合金膜の表膜部分が多少剥が
れても残留した膜内にはPdもAuも含まれるので、P
d膜とAu膜とを重ねて形成する場合に最表面となるA
u膜が剥がれた場合と比べて耐食性および耐摩耗性が保
持され、十分にその接合信頼性を確保できる、という効
果がある。
According to the second aspect of the present invention, Pd and Au are contained in the remaining film even if the surface film portion of the Pd-Au alloy film is slightly peeled off in the terminal bending step or the like.
When the d film and the Au film are formed on top of each other,
Corrosion resistance and abrasion resistance are maintained as compared with the case where the u film is peeled off, and there is an effect that the joint reliability can be sufficiently ensured.

【0047】さらに、請求項3の発明によれば、基材と
下地膜との間での局部電流の発生が抑えられ、これに起
因する腐食が防止されて耐食性がより一層高まったもの
とできる。これにより、Cu素材はもちろん、42アロ
イ材などのFe素材からなる基材には設けられなかった
Pd膜やPd合金膜を設けることが可能となる、という
効果がある。
Further, according to the third aspect of the present invention, generation of a local current between the base material and the base film is suppressed, thereby preventing corrosion caused by the local current and further improving the corrosion resistance. . As a result, there is an effect that a Pd film or a Pd alloy film, which is not provided on a base material made of an Fe material such as a 42 alloy material, as well as a Cu material, can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態におけるリードフレー
ムの部分断面図である。
FIG. 1 is a partial cross-sectional view of a lead frame according to a first embodiment of the present invention.

【図2】本発明の第2の実施形態におけるリードフレー
ムの部分断面図である。
FIG. 2 is a partial sectional view of a lead frame according to a second embodiment of the present invention.

【図3】本発明の第3の実施形態におけるリードフレー
ムの部分断面図である。
FIG. 3 is a partial sectional view of a lead frame according to a third embodiment of the present invention.

【図4】本発明の第4の実施形態におけるリードフレー
ムの部分断面図である。
FIG. 4 is a partial sectional view of a lead frame according to a fourth embodiment of the present invention.

【図5】本発明の第5の実施形態におけるリードフレー
ムの部分断面図である。
FIG. 5 is a partial sectional view of a lead frame according to a fifth embodiment of the present invention.

【図6】リードフレームを示す上面図である。FIG. 6 is a top view showing a lead frame.

【図7】従来のリードフレームの部分断面図である。FIG. 7 is a partial sectional view of a conventional lead frame.

【図8】従来のリードフレームの別の部分断面図であ
る。
FIG. 8 is another partial sectional view of a conventional lead frame.

【符号の説明】[Explanation of symbols]

10、30 リードフレーム基材 12 Sn−Ni合金膜12 14 Pd膜 16 Au膜 18 Pd−Au合金膜 20 Ni膜 32 Cu−Sn合金膜 10, 30 Lead frame base material 12 Sn-Ni alloy film 12 14 Pd film 16 Au film 18 Pd-Au alloy film 20 Ni film 32 Cu-Sn alloy film

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 Cu素材からなる基材と、 前記基材の表面に形成されSnとNiとからなるSn−
Ni合金膜と、 前記Sn−Ni合金膜の表面に形成されたPd膜または
表面にAu膜が形成されたPd膜と、 を備えたリードフレーム。
1. A substrate made of a Cu material, and an Sn— layer formed on the surface of the substrate and made of Sn and Ni.
A lead frame comprising: a Ni alloy film; and a Pd film formed on the surface of the Sn—Ni alloy film or a Pd film formed on the surface with an Au film.
【請求項2】 Cu素材からなる基材と、 前記基材の表面に形成されNi膜またはSnとNiとか
らなるSn−Ni合金膜からなる下地膜と、 前記下地膜の表面に形成されたPdとAuとからなるP
d−Au合金膜と、 を備えたリードフレーム。
2. A substrate formed of a Cu material, a base film formed on a surface of the base material and formed of a Ni film or a Sn—Ni alloy film formed of Sn and Ni, and a base film formed on a surface of the base film. P consisting of Pd and Au
A lead frame comprising: a d-Au alloy film.
【請求項3】 Fe素材またはCu素材からなる基材
と、 前記基材の表面に形成されCuとSnとからなるCu−
Sn合金膜と、 前記Cu−Sn合金膜の表面に形成されSnとNiとか
らなるSn−Ni合金膜またはNi膜からなる下地膜
と、 Pd−Au合金膜、Pd膜、及び表面にAu膜を備えた
Pd膜の何れか1つの膜と、 を備えたリードフレーム。
3. A base material made of an Fe material or a Cu material, and a Cu-based material formed on the surface of the base material and made of Cu and Sn.
A Sn alloy film; a Sn—Ni alloy film composed of Sn and Ni formed on the surface of the Cu—Sn alloy film or a base film composed of a Ni film; a Pd—Au alloy film, a Pd film, and an Au film on the surface A lead frame comprising: any one of the Pd films comprising:
JP3768498A 1998-02-19 1998-02-19 Lead frame Pending JPH11238840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3768498A JPH11238840A (en) 1998-02-19 1998-02-19 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3768498A JPH11238840A (en) 1998-02-19 1998-02-19 Lead frame

Publications (1)

Publication Number Publication Date
JPH11238840A true JPH11238840A (en) 1999-08-31

Family

ID=12504428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3768498A Pending JPH11238840A (en) 1998-02-19 1998-02-19 Lead frame

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768186B2 (en) * 2002-10-15 2004-07-27 Semiconductor Components Industries, L.L.C. Semiconductor device and laminated leadframe package
JP2005057067A (en) * 2003-08-05 2005-03-03 Renesas Technology Corp Semiconductor device and manufacturing method thereof
CN1305132C (en) * 1999-10-01 2007-03-14 三星航空产业株式会社 Lead frame and its electroplating method
KR101007595B1 (en) 2003-01-16 2011-01-12 파나소닉 주식회사 Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1305132C (en) * 1999-10-01 2007-03-14 三星航空产业株式会社 Lead frame and its electroplating method
US6768186B2 (en) * 2002-10-15 2004-07-27 Semiconductor Components Industries, L.L.C. Semiconductor device and laminated leadframe package
KR101007595B1 (en) 2003-01-16 2011-01-12 파나소닉 주식회사 Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device
JP2005057067A (en) * 2003-08-05 2005-03-03 Renesas Technology Corp Semiconductor device and manufacturing method thereof

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