JPH11219970A - Bonding wire and formation thereof - Google Patents

Bonding wire and formation thereof

Info

Publication number
JPH11219970A
JPH11219970A JP10033890A JP3389098A JPH11219970A JP H11219970 A JPH11219970 A JP H11219970A JP 10033890 A JP10033890 A JP 10033890A JP 3389098 A JP3389098 A JP 3389098A JP H11219970 A JPH11219970 A JP H11219970A
Authority
JP
Japan
Prior art keywords
lead portion
connection
wire
electrode pad
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10033890A
Other languages
Japanese (ja)
Other versions
JP3436676B2 (en
Inventor
Kenji Oshima
謙二 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Unisia Automotive Ltd
Original Assignee
Unisia Jecs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisia Jecs Corp filed Critical Unisia Jecs Corp
Priority to JP03389098A priority Critical patent/JP3436676B2/en
Publication of JPH11219970A publication Critical patent/JPH11219970A/en
Application granted granted Critical
Publication of JP3436676B2 publication Critical patent/JP3436676B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance durability of bonding wires connecting electrode pads to prolong its life. SOLUTION: A bonding wire 21 is connected between an electrode pad 2 of a substrate 1 and an electrode pad 5 of a bare chip element 3. One side lead part 23 of the bonding wire 21 is shaped into an letter S. The S-shape lead part 27 acts to disperse stresses at a point of the other side connector 26 of the wire 21 and to enhance durability of the wire 21.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えば集積回路ま
たは大規模集積回路等の半導体素子、基板、コネクタの
電極パッド同士を接続するのに用いて好適なボンディン
グワイヤ及びその成形方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire suitable for connecting electrode pads of a semiconductor element such as an integrated circuit or a large-scale integrated circuit, a substrate, and a connector, and a method of forming the same.

【０００２】[0002]

【従来の技術】一般に、従来技術によるボンディングワ
イヤは、素子、基板、コネクタの電極パッド同士を接続
するため、頂点から一側に延びる一側リード部と、頂点
から他側に延びる他側リード部とによって全体としてほ
ぼ逆Ｖ字状をなす１本のワイヤによって形成され、前記
一側リード部の先端には一方の電極パッドに接続される
一側接続部を形成し、前記他側リード部の先端には他方
の電極パッドに接続される他側接続部を形成したものが
一般に知られている。2. Description of the Related Art Generally, a bonding wire according to the prior art is connected to an electrode pad of an element, a substrate, or a connector, so that one side lead extending from the top to one side and the other side lead extending from the top to the other side. Is formed by a single wire having a substantially inverted V-shape as a whole, a one-side connection portion connected to one electrode pad is formed at the tip of the one-side lead portion, and the other-side lead portion has It is generally known that a leading end is provided with another connecting portion connected to the other electrode pad.

【０００３】そこで、この種の従来技術によるボンディ
ングワイヤとして、素子にマイクロコンピュータ等を構
成するベアチップ素子を用いた場合を例に挙げ、図７な
いし図１０に基づいて説明する。A case where a bare chip element constituting a microcomputer or the like is used as an element as a bonding wire according to this type of prior art will be described as an example with reference to FIGS. 7 to 10.

【０００４】まず、図７、図８において、１は絶縁性の
基板、２，２，…は該基板１上に形成された電極パッド
で、該各電極パッド２は、例えばアルミニウム，白金，
銀パラジウム等の金属材料から例えば平行四辺形状に形
成され、互いに同一形状をなしている。First, in FIGS. 7 and 8, reference numeral 1 denotes an insulating substrate; 2, 2,..., Electrode pads formed on the substrate 1;
For example, it is formed in a parallelogram shape from a metal material such as silver palladium and has the same shape as each other.

【０００５】３は基板１上に搭載されたベアチップ素子
で、該ベアチップ素子３は例えばシリコン等から４個の
辺３Ａ，３Ａ，…（２個のみ図示）を有する四角形の板
状に形成され、その表面中央部には図示しない半導体集
積回路が形成されている。Reference numeral 3 denotes a bare chip element mounted on the substrate 1. The bare chip element 3 is formed of, for example, silicon or the like in a square plate shape having four sides 3A, 3A,. A semiconductor integrated circuit (not shown) is formed at the center of the surface.

【０００６】ここで、ベアチップ素子３の表面外周側に
は、前記半導体集積回路の入出力端子となる後述の各電
極パッド５が形成されている。また、ベアチップ素子３
の裏面側は図８に示すように、基板１上に形成された凹
陥部１Ａ内に添付した接着層４を用いて固定されてい
る。一方、基板１上には、例えば保護カバー（図示せ
ず）等がベアチップ素子３を覆うように取付けられ、該
ベアチップ素子３は基板１と保護カバーと共に、例えば
マイクロコンピュータ等のチップ部品を構成している。Here, on the outer peripheral side of the surface of the bare chip element 3, electrode pads 5 to be described later, which become input / output terminals of the semiconductor integrated circuit, are formed. In addition, bare chip element 3
As shown in FIG. 8, the back surface is fixed by using an adhesive layer 4 attached in a recessed portion 1A formed on the substrate 1. On the other hand, on the substrate 1, for example, a protective cover (not shown) or the like is attached so as to cover the bare chip element 3. The bare chip element 3 constitutes a chip component such as a microcomputer together with the substrate 1 and the protective cover. ing.

【０００７】５，５，…はベアチップ素子３上に形成さ
れた素子側の電極パッドで、該各電極パッド５は例えば
アルミニウム，白金，銀パラジウム等の金属材料から四
角形状に形成され、ベアチップ素子３の外縁側に沿うよ
うにそれぞれ間隔をもって四角形状に列設されている。Reference numerals 5, 5,... Denote electrode pads on the element side formed on the bare chip element 3. Each of the electrode pads 5 is formed in a square shape from a metal material such as aluminum, platinum, silver palladium or the like. 3 are arranged in a square shape with an interval along the outer edge side.

【０００８】６，６，…は電極パッド２と電極パッド５
との間を接続する複数のボンディングワイヤで、該各ボ
ンディングワイヤ６は例えばアルミニウム，金等の金属
材料から針金状に形成されている。Are electrode pads 2 and 5
The bonding wires 6 are formed in a wire shape from a metal material such as aluminum or gold.

【０００９】ここで、ボンディングワイヤ６は、図８に
示す如く、例えばワイヤボンディング等の手段により、
１本のワイヤを、頂点７から一側に延びる一側リード部
８と、頂点７から他側に延びる他側リード部９とによっ
て全体としてほぼ逆Ｖ字状をなして形成し、前記一側リ
ード部８の先端には基板１側の電極パッド２に接続され
る一側接続部１０が形成され、前記他側リード部９の先
端にはベアチップ素子３の電極パッド５が接続される他
側接続部１１が形成されている。そして、該ボンディン
グワイヤ６は、電極パッド２と電極パッド５との間をた
るみをもって架設している。なお、ボンディングワイヤ
６では、一側接続部１０と他側接続部１１との間の長さ
寸法をＬ、高さ寸法をｈとしている。Here, as shown in FIG. 8, the bonding wire 6 is formed by, for example, wire bonding.
One wire is formed in a substantially inverted V-shape as a whole by a one-side lead portion 8 extending from the apex 7 to one side and an other-side lead portion 9 extending from the apex 7 to the other side. One end connecting portion 10 connected to the electrode pad 2 on the substrate 1 side is formed at the tip of the lead portion 8, and the other side to which the electrode pad 5 of the bare chip element 3 is connected at the tip of the other side lead portion 9. The connection part 11 is formed. The bonding wire 6 extends between the electrode pad 2 and the electrode pad 5 with a slack. In the bonding wire 6, the length between the one-side connection part 10 and the other-side connection part 11 is L, and the height is h.

【００１０】このように構成される従来技術では、ベア
チップ素子３上に形成された前記半導体集積回路が電極
パッド２、電極パッド５およびボンディングワイヤ６等
を用いて基板１側の各ピン端子（図示せず）に接続さ
れ、これらのピン端子を通して外部の信号処理回路（図
示せず）等にそれぞれ接続されている。In the prior art having such a configuration, the semiconductor integrated circuit formed on the bare chip element 3 uses the electrode pads 2, the electrode pads 5, the bonding wires 6 and the like to form respective pin terminals (see FIG. (Not shown), and connected to an external signal processing circuit (not shown) through these pin terminals.

【００１１】[0011]

【発明が解決しようとする課題】ところで、上述した従
来技術によるボンディングワイヤ６は、使用環境によっ
ても異なるが、熱や機械的な応力変化等により断線する
可能性があり、信頼性が低下するという問題がある。The above-described bonding wire 6 according to the prior art varies depending on the use environment, but may be broken due to heat or mechanical stress change, and the reliability is reduced. There's a problem.

【００１２】そこで、発明者は、ボンディングワイヤの
寿命を延ばすために、鋭意実験研究を行い、図９、図１
０の特性グラフに示すような結果を得た。また、各グラ
フの横軸はボンディングワイヤ６が破断するまでの破断
サイクル、縦軸はワイブル分布による累積故障率を示し
たものである。The inventor of the present invention has conducted extensive experimental research to extend the life of the bonding wire.
0 was obtained as shown in the characteristic graph. Further, the horizontal axis of each graph indicates a breaking cycle until the bonding wire 6 breaks, and the vertical axis indicates a cumulative failure rate based on Weibull distribution.

【００１３】ここで、図９の特性グラフは、長さ寸法Ｌ
を５ｍｍとし、長さ寸法Ｌの方向に振幅０．２ｍｍで３
Ｈz の振動を発生させたもので、高さ寸法ｈを２．１ｍ
ｍ、３．７ｍｍ、４．５ｍｍとしたときの実験結果であ
る。Here, the characteristic graph of FIG.
Is set to 5 mm, and an amplitude of 0.2 mm
A vibration of Hz is generated, and the height h is 2.1 m
m, 3.7 mm, and 4.5 mm.

【００１４】一方、図１０の特性グラフは、高さ寸法ｈ
を４ｍｍとし、長さ寸法Ｌの方向に振幅０．４ｍｍで３
Ｈz の振動を発生させたもので、長さ寸法Ｌを５ｍｍ、
６ｍｍ、１０ｍｍとしたときの実験結果である。On the other hand, the characteristic graph of FIG.
Is 4 mm, and the amplitude is 0.4 mm in the direction of the length dimension L.
The vibration of Hz is generated, the length L is 5 mm,
It is an experimental result when it is set to 6 mm and 10 mm.

【００１５】例えば、従来技術によるボンディングワイ
ヤ６において、長さ寸法Ｌを５ｍｍ、高さ寸法ｈを４ｍ
ｍとしたとき、一側接続部１０、他側接続部１１、頂点
７における応力を測定した結果は、一側接続部１０で８
Ｋｇf ／ｍｍ2 、他側接続部１１で６．５Ｋｇf ／ｍｍ
2 、頂点７で６．１Ｋｇf ／ｍｍ2 となり、一側接続部
１０に比較的大きな応力集中が起きていることがわか
る。これにより、ボンディングワイヤ６は、いずれの実
験においても、一側接続部１０で断線を起こしている。For example, in the bonding wire 6 according to the prior art, the length L is 5 mm, and the height h is 4 m.
m, the stress measured at the one-side connection part 10, the other-side connection part 11, and the apex 7 is 8 at the one-side connection part 10.
Kgf / mm 2 , 6.5 kgf / mm at the other side connection portion 11
2 , 6.1 Kgf / mm 2 at the vertex 7, indicating that a relatively large stress concentration occurs at the one-side connection portion 10. As a result, the bonding wire 6 is broken at the one-side connection portion 10 in any of the experiments.

【００１６】これらの実験結果からも明らかなように、
ボンディングワイヤ６の寿命を延ばすためには、長さ寸
法Ｌ、高さ寸法ｈの両方を大きくすればよいことがわか
る。しかし、基板１の凹陥部１Ａとベアチップ素子３と
の大きさ、ボンディングワイヤ６の高さ寸法ｈには限界
があり、ボンディングワイヤ６は限られたスペースに収
容しなくてはならず、従来技術によるボンディングワイ
ヤ６では寿命を延ばすことができなかった。As is clear from the results of these experiments,
It can be seen that in order to extend the life of the bonding wire 6, both the length L and the height h need to be increased. However, the size of the recess 1A of the substrate 1 and the bare chip element 3 and the height h of the bonding wire 6 are limited, and the bonding wire 6 must be accommodated in a limited space. However, the life of the bonding wire 6 cannot be extended.

【００１７】本発明は上述した従来技術の問題に鑑みな
されたもので、本発明は耐久性を高めて寿命を延ばすこ
とのできるボンディングワイヤ及びその成形方法を提供
することを目的としている。The present invention has been made in view of the above-mentioned problems of the prior art, and it is an object of the present invention to provide a bonding wire capable of increasing durability and extending its life, and a method of forming the same.

【００１８】[0018]

【課題を解決するための手段】上述した課題を解決する
ために、請求項１の発明は、頂点から一側に延びる一側
リード部と、頂点から他側に延びる他側リード部とによ
って全体としてほぼ逆Ｖ字状をなす１本のワイヤによっ
て形成され、前記一側リード部の先端には一方の電極パ
ッドに接続される一側接続部を形成し、前記他側リード
部の先端には他方の電極パッドに接続される他側接続部
を形成してなるボンディングワイヤにおいて、前記一側
リード部と他側リード部のうち、一方のリード部をＳ字
形状に形成したことにある。In order to solve the above-mentioned problems, the invention according to claim 1 is provided with a one-side lead portion extending from a vertex to one side and an other-side lead portion extending from a vertex to the other side. Is formed by a single wire that forms a substantially inverted V-shape. One end of the one-side lead portion has a one-side connection portion connected to one electrode pad, and the other-side lead portion has a one-side connection portion. One of the one-side lead portion and the other-side lead portion is formed in an S-shape in a bonding wire that forms another side connection portion connected to the other electrode pad.

【００１９】このように構成することにより、一側リー
ド部と他側リード部のうち、一方のリード部に形成した
Ｓ字形状は、一側接続部、頂点、他側接続部における応
力集中を分散させることができる。With such a configuration, the S-shape formed on one of the one-side lead portion and the other-side lead portion reduces the stress concentration at the one-side connection portion, the vertex, and the other-side connection portion. Can be dispersed.

【００２０】請求項２の発明によるボンディングワイヤ
の成形方法は、ワイヤの引出部位を接続ヘッドによって
一方の電極パッドに押付けて接続することにより一側接
続部を形成する第１の接続工程と、該第１の接続工程で
接続された一側接続部から引出された一側リード部の引
出部位を接続ヘッドによって基板側または電極パッドに
押付けることにより一側リード部をＳ字状に形成するＳ
字形成工程と、Ｓ字状とした一側リード部の引出部位を
頂点としてほぼ逆Ｖ字状に折曲げさらにワイヤを引出す
ことによって他側リード部を形成する他側リード部形成
工程と、ワイヤの他側リード部の引出部位を接続ヘッド
によって他方の電極パッドに押付けて接続することによ
り他側接続部を形成する第２の接続工程とからなる。According to a second aspect of the present invention, there is provided a bonding wire forming method comprising: a first connection step of forming a one-side connection portion by pressing a connection portion of a wire against one of electrode pads by a connection head; The one-side lead portion is formed in an S-shape by pressing the lead-out portion of the one-side lead portion pulled out from the one-side connection portion connected in the first connection step to the substrate side or the electrode pad by the connection head S.
A lead forming step of forming an S-shaped one-side lead portion into a substantially inverted V-shape with a lead portion of the one-side lead portion as an apex, and further drawing a wire to form the other-side lead portion; A second connection step of forming the other-side connection portion by pressing the connection portion of the other-side lead portion against the other electrode pad by the connection head.

【００２１】このように構成することにより、Ｓ字形成
工程によって一側リード部の引出部位を基板側または電
極パッドに押付けて一側リード部をＳ字状に形成し、こ
のＳ字状は、一側接続部、頂点、他側接続部の各点にお
ける応力を分散させることができる。With this configuration, the one-side lead portion is formed in an S-shape by pressing the lead portion of the one-side lead portion to the substrate side or the electrode pad in the S-shape forming step. The stress at each point of the one-side connection part, the top, and the other-side connection part can be dispersed.

【００２２】請求項３の発明によるボンディングワイヤ
の成形方法は、ワイヤの引出部位を接続ヘッドによって
一方の電極パッドに押付けて接続することにより一側接
続部を形成する第１の接続工程と、該第１の接続工程で
接続された一側接続部から引出すことにより一側リード
部を形成する一側リード部形成工程と、一側リード部の
引出部位をほぼＶ字状に折曲げさらに引出された他側リ
ード部の引出部位を接続ヘッドによって基板側または電
極パッドに押付けることにより他側リード部をＳ字状に
形成するＳ字形成工程と、Ｓ字状とした他側リード部の
引出部位を接続ヘッドによって他方の電極パッドに押付
けて接続することにより他側接続部を形成する第２の接
続工程とからなる。According to a third aspect of the present invention, there is provided a bonding wire forming method comprising: a first connection step of forming a one-side connection portion by pressing a connection portion of a wire against one of electrode pads by a connection head; A one-side lead portion forming step of forming a one-side lead portion by pulling out from the one-side connection portion connected in the first connection step, and a drawing portion of the one-side lead portion is bent substantially in a V-shape and further drawn out. An S-shaped forming step of forming the other-side lead portion into an S-shape by pressing the lead portion of the other-side lead portion against the substrate side or the electrode pad by the connection head; and drawing out the S-shaped other-side lead portion. And a second connection step of forming the other-side connection portion by pressing the portion to the other electrode pad by the connection head to make connection.

【００２３】このように構成することにより、Ｓ字形成
工程によって他側リード部の引出部位を基板側または電
極パッドに押付けて他側リード部をＳ字状に形成し、こ
のＳ字状は、一側接続部、頂点、他側接続部の各点にお
ける応力を分散させることができる。With this configuration, the lead portion of the other-side lead portion is pressed against the substrate or the electrode pad in the S-shaped forming step to form the other-side lead portion in an S-shape. The stress at each point of the one-side connection part, the top, and the other-side connection part can be dispersed.

【００２４】[0024]

【発明の実施の形態】以下、本発明に係るボンディング
ワイヤの実施の形態を、図１ないし図６を参照しつつ詳
細に説明する。なお、本実施の形態では前述した従来技
術と同一の構成要素に同一の符号を付し、その説明を省
略するものとする。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the bonding wire according to the present invention will be described below in detail with reference to FIGS. In the present embodiment, the same components as those of the above-described related art are denoted by the same reference numerals, and description thereof will be omitted.

【００２５】まず、図１ないし図４に基づいて、第１の
実施の形態によるボンディングワイヤについて説明す
る。First, a bonding wire according to a first embodiment will be described with reference to FIGS.

【００２６】２１は本実施の形態に用いられるボンディ
ングワイヤで、該ボンディングワイヤ２１は従来技術で
用いられたボンディングワイヤ６に代えて用いられるも
ので、基板１側の電極パッド２とベアチップ素子３側の
電極パッド５とを電気的に接続するものである。Reference numeral 21 denotes a bonding wire used in the present embodiment. The bonding wire 21 is used in place of the bonding wire 6 used in the prior art, and includes the electrode pad 2 on the substrate 1 and the bare chip element 3. Is electrically connected to the electrode pad 5 of the first embodiment.

【００２７】ここで、ボンディングワイヤ２１は、例え
ばアルミニウム，金等の金属材料から針金状によって全
体としてほぼ逆Ｖ字状をなして形成され、後述するワイ
ヤボンディング装置３１により、頂点２２から一側に延
びる一側リード部２３と、頂点２２から他側に延びる他
側リード部２４と、前記一側リード部２３の先端を基板
１側の電極パッド２に接続する一側接続部２５と、前記
他側リード部２４の先端をベアチップ素子３の電極パッ
ド５に接続する他側接続部２６とから大略構成されてい
る。また、本実施の形態によるボンディングワイヤ２１
では、一側接続部２５と他側接続部２６との間の長さ寸
法をＬ、高さ寸法をｈとしている。The bonding wire 21 is made of a metal material such as aluminum, gold, or the like, and is formed in a generally V-shape by a wire shape. The bonding wire 21 is moved from the vertex 22 to one side by a wire bonding apparatus 31 described later. An extending one-sided lead portion 23, an other-sided lead portion 24 extending from the vertex 22 to the other side, a one-sided connecting portion 25 for connecting the tip of the one-sided lead portion 23 to the electrode pad 2 on the substrate 1 side, The other side connection part 26 for connecting the tip of the side lead part 24 to the electrode pad 5 of the bare chip element 3 is roughly constituted. Further, the bonding wire 21 according to the present embodiment
In the example, the length between the one-side connection part 25 and the other-side connection part 26 is L, and the height is h.

【００２８】２７はボンディングワイヤ２１の一側リー
ド部２３に形成されたＳ字形状で、該Ｓ字形状２７は一
側リード部２３の途中を湾曲させることによって、一側
接続部２５と頂点２２との間でＳ字状となっている。Numeral 27 denotes an S-shape formed on one side lead portion 23 of the bonding wire 21. The S-shaped shape 27 is formed by bending the middle of the one side lead portion 23 so that the one side connection portion 25 and the vertex 22 Are in an S-shape.

【００２９】次に、図２を参照しつつ、本実施の形態に
よるボンディングワイヤ２１を成形するワイヤボンディ
ング装置の概略について説明する。Next, an outline of a wire bonding apparatus for forming the bonding wire 21 according to the present embodiment will be described with reference to FIG.

【００３０】３１はワイヤボンディング装置、３２は該
ワイヤボンディング装置３１の基台で、該基台３２は、
支柱３３と、該支柱３３の上側に設けられたヘッド保持
腕３４と、前記支柱３３の下側に設けられたテーブル支
持腕３５とから大略構成されている。31 is a wire bonding apparatus, 32 is a base of the wire bonding apparatus 31, and the base 32 is
It is roughly composed of a column 33, a head holding arm 34 provided above the column 33, and a table support arm 35 provided below the column 33.

【００３１】３６はテーブル支持腕３５に取付けられた
ＸＹテーブルで、該ＸＹテーブル３６は、固定テーブル
と移動テーブル（いずれも図示せず）からなり、該ＸＹ
テーブル３６は、基板１を移動テーブル上に保持した上
で該基板１を水平面となるＸ軸、Ｙ軸方向に移動させる
ものである。Reference numeral 36 denotes an XY table attached to the table support arm 35. The XY table 36 comprises a fixed table and a movable table (neither is shown).
The table 36 holds the substrate 1 on a moving table, and moves the substrate 1 in the X-axis and Y-axis directions that are horizontal planes.

【００３２】３７はヘッド保持腕３４の先端に設けられ
たＺ軸移動機構で、該Ｚ軸移動機構３７は後述するヘッ
ド部材４０等をＸＹテーブル３６に対して上下方向に移
動させるものである。Reference numeral 37 denotes a Z-axis moving mechanism provided at the tip of the head holding arm 34. The Z-axis moving mechanism 37 vertically moves a head member 40 and the like described later with respect to the XY table 36.

【００３３】３８はワイヤ３９を巻回した状態で収容す
るワイヤ収容部となるリールで、該リール３８に巻回さ
れたワイヤ３９は後述するワイヤ送出部４２を経由して
接続ヘッド４１の先端に導かれる。Numeral 38 denotes a reel serving as a wire accommodating portion for accommodating the wire 39 wound thereon, and the wire 39 wound on the reel 38 is connected to the tip of a connection head 41 via a wire sending portion 42 described later. Be guided.

【００３４】４０はヘッド部材で、該ヘッド部材４０
は、接続ヘッド４１と、ワイヤ送出部４２と、接続ヘッ
ド４１とワイヤ送出部４２との間に設けられたカッター
４３によって構成されている。Reference numeral 40 denotes a head member.
Is composed of a connection head 41, a wire sending section 42, and a cutter 43 provided between the connection head 41 and the wire sending section 42.

【００３５】ここで、前記接続ヘッド４１は、ワイヤ３
９を電極パッドに接続するときに、超音波が印加される
ことにより、ワイヤ３９の引出部位３９Ａと電極パッド
とを圧着するものである。また、ワイヤ送出部４２は、
ヘッド部材４０の上下動に伴ってリール３８に巻回され
たワイヤ３９を送出すものである。さらに、カッター４
３は、接続ヘッド４１とワイヤ送出部４２との間に位置
し、ヘッド部材４０の先端に伸長することにより、ワイ
ヤ３９を切断するものである。なお、接続ヘッド４１の
先端には常にワイヤ３９の引出部位３９Ａが臨んでい
る。Here, the connection head 41 is connected to the wire 3
When connecting the electrode 9 to the electrode pad, ultrasonic waves are applied to press-bond the lead portion 39A of the wire 39 and the electrode pad. In addition, the wire sending unit 42
The wire 39 wound around the reel 38 is sent out as the head member 40 moves up and down. In addition, cutter 4
Numeral 3 is located between the connection head 41 and the wire sending section 42, and cuts the wire 39 by extending to the tip of the head member 40. Note that the leading portion 39A of the wire 39 always faces the tip of the connection head 41.

【００３６】なお、ＸＹテーブル３６、Ｚ軸移動機構３
７、接続ヘッド４１、カッター４３等は図示しないコン
トロールユニットによって制御され、コントロールユニ
ットには基板１の大きさ、ベアチップ素子３の形状、電
極パッド２，５の位置、ボンディングワイヤ２１の長さ
寸法Ｌ，高さ寸法ｈ等が予め記憶されている。The XY table 36 and the Z-axis moving mechanism 3
7, the connection head 41, the cutter 43, and the like are controlled by a control unit (not shown). The control unit includes the size of the substrate 1, the shape of the bare chip element 3, the positions of the electrode pads 2, 5, and the length L of the bonding wire 21. , Height h, etc. are stored in advance.

【００３７】次に、上述したワイヤボンディング装置３
１を用いて本実施の形態によるボンディングワイヤ２１
を形成する場合を、図３を参照しつつ説明する。Next, the above-described wire bonding apparatus 3
1 and the bonding wire 21 according to the present embodiment.
Will be described with reference to FIG.

【００３８】まず、第１の接続工程では、図３中の
（１）のように、ＸＹテーブル３６上に支持された基板
１に対してヘッド部材４０をＺ軸移動機構３７によって
近づける。そして、接続ヘッド４１によってワイヤ３９
の引出部位３９Ａを電極パッド２に押付け、該接続ヘッ
ド４１に超音波を印加することにより、ワイヤ３９の引
出部位３９Ａを基板１上の電極パッド２に接続する。こ
れにより、電極パッド２側にボンディングワイヤ２１の
一側接続部２５を形成する。First, in the first connection step, the head member 40 is moved closer to the substrate 1 supported on the XY table 36 by the Z-axis moving mechanism 37 as shown at (1) in FIG. The wire 39 is connected by the connection head 41.
The extraction portion 39A of the wire 39 is pressed against the electrode pad 2 and ultrasonic waves are applied to the connection head 41 to connect the extraction portion 39A of the wire 39 to the electrode pad 2 on the substrate 1. Thus, the one-side connection part 25 of the bonding wire 21 is formed on the electrode pad 2 side.

【００３９】次に、図３中の（２）に示すように、Ｚ軸
移動機構３７によってヘッド部材４０を電極パッド２か
ら離間させることにより、ワイヤ３９は一側接続部２５
を起点としてワイヤ送出部４２から引出される。Next, as shown in (2) in FIG. 3, the head member 40 is separated from the electrode pad 2 by the Z-axis moving mechanism 37, so that the wire 39 is connected to the one-side connection portion 25.
From the wire sending section 42.

【００４０】次に、Ｓ字形成工程では、まず図３中の
（３）に示すように、Ｚ軸移動機構３７を駆動してヘッ
ド部材４０を基板１側に近づけ、接続ヘッド４１によっ
て一側リード部２３に位置したワイヤ３９の引出部位３
９Ａを基板１側に押付けることにより、一側リード部２
３をＳ字形状２７に形成する。従って、図３中の（４）
に示すように、Ｚ軸移動機構３７によってヘッド部材４
０を基板１から離間させることにより、ワイヤ３９をワ
イヤ送出部４２から更に引出す。Next, in the S-shaped forming step, first, as shown at (3) in FIG. 3, the Z-axis moving mechanism 37 is driven to bring the head member 40 closer to the substrate 1 side, Lead-out portion 3 of wire 39 located at lead portion 23
By pressing 9A against the substrate 1, the one-side lead 2
3 is formed in an S-shape 27. Therefore, (4) in FIG.
As shown in FIG.
By separating 0 from the substrate 1, the wire 39 is further pulled out from the wire sending section 42.

【００４１】次に、他側リード部形成工程では図３中の
（５）に示すように、一側リード部２３をＳ字状に形成
した後に、接続ヘッド４１を下方に向け一側リード部２
３の先端となるワイヤ３９の引出部位３９Ａをほぼ逆Ｖ
字状に折曲げて頂点２２を形成しつつ、さらに引出部位
３９Ａを引出すことによって、他側リード部２４を形成
する。Next, in the other-side lead portion forming step, as shown in (5) of FIG. 3, after forming the one-side lead portion 23 in an S-shape, the connection head 41 is directed downward to the one-side lead portion. 2
3 is substantially inverted V.
The other-side lead portion 24 is formed by further drawing out the lead-out portion 39A while forming the vertex 22 by bending in a letter shape.

【００４２】最後に、第２の接続工程では、図３中の
（６）に示すように、Ｚ軸移動機構３７によってヘッド
部材４０をベアチップ素子３の電極パッド５に近づけ
る。そして、接続ヘッド４１によって他側リード部２４
に位置したワイヤ３９の引出部位３９Ａを電極パッド５
に押付け、該接続ヘッド４１に超音波を印加することに
より、ワイヤの他端を電極パッド５に接続して他側接続
部２６を形成する。その後に、カッター４３によってワ
イヤ３９を切断する。Finally, in the second connection step, as shown at (6) in FIG. 3, the head member 40 is brought closer to the electrode pad 5 of the bare chip element 3 by the Z-axis moving mechanism 37. Then, the other-side lead portion 24 is connected by the connection head 41.
The extraction portion 39A of the wire 39 positioned at the
The other end of the wire is connected to the electrode pad 5 by applying ultrasonic waves to the connection head 41 to form the other-side connection portion 26. After that, the wire 39 is cut by the cutter 43.

【００４３】このように、本実施の形態によるボンディ
ングワイヤ２１は、上述した如くの工程によって成形さ
れ、一側リード部２３をＳ字形状２７に成形することが
できる。これにより、本実施の形態によるボンディング
ワイヤ２１において、長さ寸法Ｌを５ｍｍ、高さ寸法ｈ
を４ｍｍとしたとき、一側接続部２５、他側接続部２
６、頂点２２の各点における応力を測定した結果は、一
側接続部２５で６．７Ｋｇf ／ｍｍ2 、他側接続部２６
で６Ｋｇf ／ｍｍ2 、頂点２２で５．７Ｋｇf ／ｍｍ2
となり、従来技術によるボンディングワイヤ６に比べて
応力を分散させることができる。As described above, the bonding wire 21 according to the present embodiment is formed by the above-described steps, and the one-side lead portion 23 can be formed into the S-shape 27. Thereby, in the bonding wire 21 according to the present embodiment, the length dimension L is 5 mm and the height dimension h is
Is 4 mm, one side connection part 25, the other side connection part 2
6. The result of measuring the stress at each point of the apex 22 is 6.7 kgf / mm 2 at one side connection part 25 and the other side connection part 26.
5.7Kgf / mm 2 in 6Kgf / mm 2, at the apex 22
Thus, the stress can be dispersed as compared with the bonding wire 6 according to the related art.

【００４４】なお、本実施の形態と従来技術による各部
位の応力の測定結果を比較すると下記の表のようにな
る。The following table shows a comparison between the measurement results of the stress of each part according to the present embodiment and the prior art.

【００４５】[0045]

【表１】 [Table 1]

【００４６】しかも、図４に示す如く、本実施の形態に
よるボンディングワイヤ２１と従来技術によるボンディ
ングワイヤ６との寿命を比較した実験結果からも明らか
なように、耐久性を約２倍に高めて寿命を延ばすことが
できる。Further, as shown in FIG. 4, the durability is increased about twice as evident from the experimental results comparing the life of the bonding wire 21 according to the present embodiment with the bonding wire 6 according to the prior art. Life can be extended.

【００４７】なお、この実験は、長さ寸法Ｌを５ｍｍ、
高さ寸法ｈを４ｍｍとした同一寸法のボンディングワイ
ヤ６，２１に対して、長さ寸法Ｌの方向に振幅０．４ｍ
ｍで３Ｈz の振動を発生させたものである。In this experiment, the length L was 5 mm,
For bonding wires 6 and 21 of the same size with a height h of 4 mm, an amplitude of 0.4 m in the direction of length L
A vibration of 3 Hz is generated at m.

【００４８】また、実施の形態でボンディングワイヤ２
１を成形する場合、従来のワイヤボンディング装置を使
用して、前述した如くのワイヤ３９を基板１側に押しつ
けてＳ字形状２７を形成するＳ字形成工程を追加するの
みで、容易に一側リード部２３をＳ字形状２７とするこ
とができる。In the embodiment, the bonding wire 2
In the case of forming the S 1, the S-shaped forming step of pressing the wire 39 against the substrate 1 as described above to form the S-shaped shape 27 using a conventional wire bonding apparatus is easily performed. The lead portion 23 can have an S-shape 27.

【００４９】さらに、ボンディングワイヤ２１は、基板
１側の電極パッド２とベアチップ素子３側の電極パッド
５との間の限られたスペース内に収容することもでき、
基板１、ベアチップ素子３等の改造を行わずに、Ｓ字形
状２７を有するボンディングワイヤ２１を配置すること
ができる。そして、該ボンディングワイヤ２１は、その
寿命を確実に延ばし、信頼性を高めることができる。Further, the bonding wire 21 can be accommodated in a limited space between the electrode pad 2 on the substrate 1 side and the electrode pad 5 on the bare chip element 3 side.
The bonding wire 21 having the S-shape 27 can be arranged without modifying the substrate 1, the bare chip element 3, and the like. The life of the bonding wire 21 can be reliably extended and reliability can be improved.

【００５０】次に、図５、図６により、第２の実施の形
態によるボンディングワイヤについて説明するに、本実
施の形態によるボンディングワイヤ２１′は、他側リー
ド部２４にＳ字形状２７′を形成したことにある。な
お、本実施の形態では、前述した第１の実施の形態と同
一の構成要素に同一の符号を付してその説明を省略し、
変更した部分にはダッシュ（′）を付すものとする。Next, a bonding wire according to the second embodiment will be described with reference to FIGS. 5 and 6. In the bonding wire 21 'according to the present embodiment, an S-shaped 27' is formed on the lead 24 on the other side. It has been formed. In this embodiment, the same components as those in the above-described first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
A dash (') shall be added to the changed part.

【００５１】ここで、図６中の（１）が一側接続部形成
工程、同じく（２）が一側リード部形成工程、（３）〜
（５）がＳ字形成工程、（６）が他側接続部形成工程を
示し、これらの各工程によってボンディングワイヤ２
１′を成形している。Here, (1) in FIG. 6 is a one-side connection part forming step, (2) is a one-side lead part forming step, and (3) to (3).
(5) shows an S-shaped forming step, and (6) shows another side connecting part forming step.
1 'is formed.

【００５２】このように成形されるボンディングワイヤ
２１′においても、前述した第１の実施の形態によるボ
ンディングワイヤ２１と同様に、耐久性を高めて寿命を
確実に延ばすことができる。Also in the bonding wire 21 'formed in this manner, similarly to the bonding wire 21 according to the above-described first embodiment, the durability can be enhanced and the life can be reliably extended.

【００５３】なお、ボンディングワイヤ２１は、基板１
の電極パッド２とベアチップ素子３の電極パッド５とを
接続する場合について述べたが、素子と素子、基板と基
板、コネクタと基板等の種々の接続に用いることもでき
る。The bonding wire 21 is connected to the substrate 1
Although the description has been made of the case where the electrode pad 2 of the bare chip element 3 and the electrode pad 5 of the bare chip element 3 are connected, it can be used for various connections such as an element to an element, a board to a board, a connector to a board, and the like.

【００５４】また、実施の形態では、Ｓ字形成工程にお
いて、ワイヤ３９の引出部位３９Ａを基板１側に押付け
ることにより、Ｓ字形状２７を形成するようにしたが、
これに限らず、電極パッドに押付けることにより、Ｓ字
形状２７を形成するようにしてもよい。In the embodiment, in the S-shaped forming step, the S-shaped shape 27 is formed by pressing the lead portion 39A of the wire 39 against the substrate 1 side.
However, the present invention is not limited thereto, and the S-shape 27 may be formed by pressing the electrode pad against the electrode pad.

【００５５】[0055]

【発明の効果】以上詳述した如く、請求項１の本発明に
よれば、一側リード部または他側リード部のうちいずれ
か一方のリード部をＳ字形状に形成したから、一側接続
部、頂点、他側接続部における応力を分散させることが
でき、ボンディングワイヤの耐久性を高めて寿命を確実
に延ばすことができる。As described above in detail, according to the first aspect of the present invention, one of the one-side lead portion and the other-side lead portion is formed in an S-shape. It is possible to disperse the stress in the connection portion, the top, and the other side connection portion, and it is possible to increase the durability of the bonding wire and to prolong the service life.

【００５６】請求項２、請求項３の発明では、Ｓ字形成
工程によってワイヤの引出部位を基板側または電極パッ
ドに押付けることにより、リード部をＳ字状に形成する
から、従来によるワイヤボンディング装置を改造するこ
となく、Ｓ字形状を有するワイヤを容易に成形すること
ができる。According to the second and third aspects of the present invention, the lead portion is formed in an S-shape by pressing the lead portion of the wire against the substrate side or the electrode pad in the S-shape forming step. A wire having an S-shape can be easily formed without modifying the device.

【図面の簡単な説明】[Brief description of the drawings]

【図１】第１の実施の形態によるボンディングワイヤを
用いて基板とベアチップ素子とを接続した状態を示す断
面図である。FIG. 1 is a cross-sectional view showing a state in which a substrate and a bare chip element are connected using bonding wires according to a first embodiment.

【図２】第１の実施の形態によるボンディングワイヤの
接続に用いられるワイヤボンディング装置を示す構成図
である。FIG. 2 is a configuration diagram showing a wire bonding apparatus used for connecting bonding wires according to the first embodiment.

【図３】ボンディングワイヤの成形方法を示す説明図で
ある。FIG. 3 is an explanatory view showing a method of forming a bonding wire.

【図４】本実施の形態によるボンディングワイヤと従来
技術によるボンディングワイヤとの寿命を比較した特性
線図である。FIG. 4 is a characteristic diagram comparing the lifetimes of the bonding wire according to the present embodiment and the bonding wire according to the related art.

【図５】第２の実施の形態によるボンディングワイヤを
用いて基板とベアチップ素子とを接続した状態を示す断
面図である。FIG. 5 is a cross-sectional view showing a state where a substrate and a bare chip element are connected using bonding wires according to a second embodiment.

【図６】ボンディングワイヤの成形方法を示す説明図で
ある。FIG. 6 is an explanatory view showing a method of forming a bonding wire.

【図７】従来技術によるボンディングワイヤを用いて基
板とベアチップ素子との接続状態を示す平面図である。FIG. 7 is a plan view showing a connection state between a substrate and a bare chip element using a bonding wire according to a conventional technique.

【図８】図７中の矢示VIII−VIII方向からみた断面図で
ある。FIG. 8 is a cross-sectional view as seen from the direction of arrows VIII-VIII in FIG.

【図９】ボンディングワイヤにおいて高さ寸法ｈを変化
させたときのボンディングワイヤの寿命を比較した特性
線図である。FIG. 9 is a characteristic diagram comparing the lifespans of the bonding wires when the height dimension h is changed.

【図１０】ボンディングワイヤにおいて電極パッド間の
長さ寸法Ｌを変化させたときのボンディングワイヤの寿
命を比較した特性線図である。FIG. 10 is a characteristic diagram comparing the life of the bonding wire when the length L between the electrode pads in the bonding wire is changed.

【符号の説明】[Explanation of symbols]

１ 基板 ２，５ 電極パッド ３ ベアチップ素子 ２１，２１′ ボンディングワイヤ ２２ 頂点 ２３ 一側リード部 ２４ 他側リード部 ２５ 一側接続部 ２６ 他側接続部 ２７，２７′ Ｓ字形状 ３１ ワイヤボンディング装置 ３９ ワイヤ ３９Ａ 引出部位 ４１ 接続ヘッド DESCRIPTION OF SYMBOLS 1 Substrate 2, 5 Electrode pad 3 Bare chip element 21, 21 'Bonding wire 22 Apex 23 One side lead part 24 Other side lead part 25 One side connection part 26 Other side connection part 27, 27' S-shaped 31 Wire bonding device 39 Wire 39A Pull-out part 41 Connection head

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 頂点から一側に延びる一側リード部と、
頂点から他側に延びる他側リード部とによって全体とし
てほぼ逆Ｖ字状をなす１本のワイヤによって形成され、
前記一側リード部の先端には一方の電極パッドに接続さ
れる一側接続部を形成し、前記他側リード部の先端には
他方の電極パッドに接続される他側接続部を形成してな
るボンディングワイヤにおいて、 前記一側リード部と他側リード部のうち、一方のリード
部をＳ字形状に形成したことを特徴とするボンディング
ワイヤ。1. A one-side lead portion extending from a vertex to one side,
The other lead portion extending from the apex to the other side is formed by one wire having a substantially inverted V shape as a whole,
At the tip of the one-side lead portion, a one-side connection portion connected to one electrode pad is formed, and at the tip of the other-side lead portion, another side connection portion connected to the other electrode pad is formed. A bonding wire, wherein one of the one-side lead and the other-side lead is formed in an S-shape. 【請求項２】 ワイヤの引出部位を接続ヘッドによって
一方の電極パッドに押付けて接続することにより一側接
続部を形成する第１の接続工程と、該第１の接続工程で
接続された一側接続部から引出された一側リード部の引
出部位を接続ヘッドによって基板側または電極パッドに
押付けることにより一側リード部をＳ字状に形成するＳ
字形成工程と、Ｓ字状とした一側リード部の引出部位を
頂点としてほぼ逆Ｖ字状に折曲げさらにワイヤを引出す
ことによって他側リード部を形成する他側リード部形成
工程と、ワイヤの他側リード部の引出部位を接続ヘッド
によって他方の電極パッドに押付けて接続することによ
り他側接続部を形成する第２の接続工程とからなるボン
ディングワイヤの成形方法。2. A first connection step of forming a one-side connection part by pressing a wire drawing portion against one electrode pad by a connection head to form a one-side connection part, and one side connected in the first connection step. The one-side lead portion is formed in an S-shape by pressing the lead portion of the one-side lead portion pulled out from the connection portion to the substrate side or the electrode pad by the connection head.
A lead forming step of forming an S-shaped one-side lead portion into a substantially inverted V-shape with a lead portion of the one-side lead portion as an apex, and further drawing a wire to form the other-side lead portion; A second connection step of forming the other-side connection portion by pressing the lead-out portion of the other-side lead portion to the other electrode pad by a connection head to make connection. 【請求項３】 ワイヤの引出部位を接続ヘッドによって
一方の電極パッドに押付けて接続することにより一側接
続部を形成する第１の接続工程と、該第１の接続工程で
接続された一側接続部から引出すことにより一側リード
部を形成する一側リード部形成工程と、一側リード部の
引出部位をほぼＶ字状に折曲げさらに引出された他側リ
ード部の引出部位を接続ヘッドによって基板側または電
極パッドに押付けることにより他側リード部をＳ字状に
形成するＳ字形成工程と、Ｓ字状とした他側リード部の
引出部位を接続ヘッドによって他方の電極パッドに押付
けて接続することにより他側接続部を形成する第２の接
続工程とからなるボンディングワイヤの成形方法。3. A first connecting step of forming a one-side connecting part by pressing a wire drawing part against one electrode pad by a connecting head to form a one-side connecting part, and the one side connected in the first connecting step. A one-side lead portion forming step of forming a one-side lead portion by pulling out from the connection portion; bending a leading portion of the one-side lead portion into a substantially V-shape; An S-shaped forming step of forming the other-side lead portion into an S-shape by pressing against the substrate side or the electrode pad, and pressing a lead portion of the S-shaped other-side lead portion against the other electrode pad by the connection head. And a second connection step of forming the other-side connection portion by making connection.
JP03389098A 1998-01-30 1998-01-30 Bonding wire forming method Expired - Fee Related JP3436676B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006081056A2 (en) * 2005-01-25 2006-08-03 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006081056A2 (en) * 2005-01-25 2006-08-03 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop
WO2006081056A3 (en) * 2005-01-25 2006-10-12 Kulicke & Soffa Ind Inc Method and apparatus for forming a low profile wire loop
US7464854B2 (en) 2005-01-25 2008-12-16 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop

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