JPH11218937A - Cleaning and removing solvent of resist and production of base body of electronic parts - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning and removing solvent for a resist-forming coat ing compsn. or a resist which exhibits excellent solubility with various kinds of resist forming-coating compsns. and resists. SOLUTION: This cleaning and removing solvent is used to clean and remove a resist-forming coating compsn. or resist, and it contains carbonic acid esters such as dimethyl carbonate and diethyl carbonate. In the production of a base body of electronic parts, a process to clean and remove an unnecessary resist- forming coating compsn. or resist depositing on a substrate with the cleaning and removing solvent above described is included so that a base body of electronic parts having high quality and uniform film thickness of a resist can be obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel solvent for cleaning and removing a coating composition for resist formation or a resist, and a method for producing a substrate for electronic parts. More specifically, when manufacturing a base material for an electronic component used particularly in microfabrication of a semiconductor element or the like, an unnecessary resist forming coating composition attached to a peripheral portion, an edge portion, a back surface portion of a substrate such as a wafer. The present invention relates to a solvent for cleaning and removal useful for cleaning and removing objects and resists, and a method for easily and efficiently producing a high-quality substrate for electronic parts by reliably removing the unnecessary coating composition and resist. .

[0002]

2. Description of the Related Art Generally, a substrate for electronic parts used for microfabrication of a semiconductor element or the like is prepared by applying a coating composition for forming a resist onto a substrate such as a wafer using a spinner or the like.
After drying to form a resist, the resist is exposed through a mask on which a circuit pattern is drawn, baked if necessary, developed, transferred to a substrate on a mask pattern, and then etched. In the above manufacturing process, in the step of applying the resist-forming coating composition to the substrate by a spinner or the like, the coating composition is diffused on the substrate by centrifugal force, so that a uniform film is formed at the center of the substrate surface. Although a thickness can be obtained, a thicker film is more likely to be formed at the peripheral portion of the substrate than at the central portion, and the resist adheres to the edge portion and the rear surface portion of the substrate. Such a resist becomes brittle due to heat treatment in a later step, and peels off in the form of small scales during transport of the substrate, which may cause dust in the apparatus or adhere to the resist surface on the substrate, resulting in high quality. Has become a major problem in the manufacture of the semiconductor device.

In order to solve such a problem, there has been proposed a method of cleaning and removing unnecessary resist components at the peripheral portion, the edge portion, and the rear surface portion of the substrate (for example, JP-A-63-69563). Gazettes). Conventionally, glycol solvents such as ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate have been used as solvents for washing and removing the unnecessary resist components. Ketones such as acetone, methyl ethyl ketone, methyl butyl ketone and cyclohexanone; esters such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate and butyl acetate; or mixtures thereof are known. However, all of these solvents have poor solubility in a positive photoresist containing a quinonediazide-based photosensitive substance having a particularly high degree of esterification, so that residues remain during spinner cup cleaning or precipitates are formed. I do. In addition, when a highly dry solvent is used for cleaning the back surface, the substrate is cooled, so that the film thickness tends to vary. On the other hand, when a solvent having low drying property is used, the cleaning property of the wafer end face is not good, and the drying property after the spinner cup cleaning is not good, so that the workability and operability are reduced. Further, the ethylene glycol derivative-based solvent has a problem of toxicity.

[0004]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a resist or the like which exhibits excellent solubility in a wide range of coating compositions for resist formation or resists (hereinafter sometimes referred to as resists and the like). An object of the present invention is to provide a solvent for washing and removing. Another object of the present invention is to provide a solvent for cleaning and removing resists and the like which exhibits excellent solubility even in a positive photoresist containing a quinonediazide-based photosensitive substance having a high degree of esterification. Still another object of the present invention is to wash and remove a resist or the like in which the solubility in the resist component is stable over time and the resist component does not precipitate during the cleaning operation and the residue of the resist component does not remain. It is to provide a solvent. Another object of the present invention is to
An object of the present invention is to provide a solvent for cleaning and removing a resist or the like which has appropriate drying properties and can efficiently uniform the thickness of the resist or the like on a substrate. Another object of the present invention is to provide a highly safe solvent for cleaning and removing resist and the like. Still another object of the present invention is to provide a substrate for electronic parts which can easily and efficiently obtain a high-quality substrate for electronic parts in which the thickness of the resist is uniform and the resist is not formed at unnecessary portions. It is to provide a manufacturing method of.

[0005]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object. As a result, when a solvent for washing and removing containing a carbonate ester is used, a quinonediazide photosensitive material having a high degree of esterification can be obtained. Even when a positive photoresist containing is formed on a substrate, it has been found that unnecessary resist components attached to the substrate can be easily removed,
The present invention has been completed.

That is, the present invention provides a solvent for washing and removing a resist-forming coating composition or a resist, the solvent comprising a carbonate ester. The present invention also provides an electronic device comprising: (1) a coating step of applying a resist-forming coating composition on a substrate; and (2) a drying step of drying the coating composition applied on the substrate to form a resist. A method for producing a base material for parts, wherein the coating step (1)
After the drying step or after the drying step (2), a method for producing a substrate for electronic parts, comprising a washing step of washing and removing unnecessary coating composition or resist adhering to the substrate with the above-mentioned solvent for washing and removing. I will provide a.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION [Carbonate] The main feature of the solvent for cleaning and removing the resist and the like of the present invention is that it contains a carbonate. The carbonate may be any of an aliphatic carbonate, an alicyclic carbonate and an aromatic carbonate, and may be any of a monoester and a diester. Preferred carbonates include compounds represented by the following formula (1).

[0008]

Embedded image (In the formula, R ¹ and R ² are the same or different and each represents a hydrocarbon group or a heterocyclic group which may have a substituent, and a and b are the same or different and are each an integer of 1 to 6. And x and y are the same or different and each represent 0 or a positive integer.) The hydrocarbon group includes an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group. Examples of the aliphatic hydrocarbon group include, for example, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, dodecyl, hexadecyl, icosyl, triacontyl and the like. Alkyl groups; alkenyl groups such as allyl, butenyl, pentenyl, dodecenyl, hexadecenyl and octadecenyl; and linear or branched aliphatic hydrocarbon groups such as alkynyl groups such as propynyl and hexynyl groups. The carbon number of the aliphatic hydrocarbon group is, for example, 1 to 30, preferably 1 to 20, more preferably 1 to
15, especially about 1 to 10 (for example, 1 to 6). Examples of the alicyclic hydrocarbon group include a cycloalkyl group such as cyclopentyl, cyclohexyl, and cyclooctyl; a cycloalkenyl group such as cyclopentenyl and cyclohexenyl. The number of carbon atoms of the alicyclic hydrocarbon group is, for example, about 3 to 30, preferably about 3 to 15, and more preferably about 5 to 8. As the aromatic hydrocarbon group, a phenyl group, a naphthyl group or the like having 6 to 30 carbon atoms, preferably 6 carbon atoms.
And about 14 aromatic hydrocarbon groups.

[0009] The hydrocarbon group may have a substituent. Examples of the substituent which the aliphatic hydrocarbon group may have include, for example, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, etc.), an aryl group (a halogen atom, an alkyl group (for example, having about 1 to 6 carbon atoms) A phenyl group or a naphthyl group which may have a substituent such as an alkyl group), a heterocyclic group (furyl, tetrahydrofuryl, thienyl, pyrrolyl, pyrrolidinyl, pyridyl, piperidino,
And a 5- to 6-membered heterocyclic group having 1 to 3 hetero atoms selected from an oxygen atom, a sulfur atom and a nitrogen atom such as morpholinyl. As the substituent which the alicyclic hydrocarbon group may have, the halogen atom,
Examples thereof include an alkyl group having about 1 to 12 carbon atoms (for example, about 1 to 6 carbon atoms). Examples of the substituent which the aromatic hydrocarbon may have include an alkyl group having about 1 to 12 carbon atoms (for example, about 1 to 6 carbon atoms), an alkoxy group having about 1 to 5 carbon atoms, the halogen atom, And a nitro group.

Specific examples of the hydrocarbon group having a substituent include a haloalkyl group (such as trifluoroethyl, perfluoropentyl and perfluorohexyl), an aralkyl group (such as benzyl and alkylphenylmethyl), and an alkyl group having a heterocyclic group. (Furfuryl, tetrahydrofurfuryl, pyridylmethyl, etc.), a cycloalkyl group having an alkyl group (methylcyclopentyl, methylcyclohexyl, etc.), a phenyl group having 1 to 5 alkyl groups (toluyl, cresyl, nonylphenyl, etc.) and the like. No.

Examples of the heterocyclic group represented by R ¹ and R ² include the heterocyclic groups exemplified as the substituent which the hydrocarbon group may have. The heterocyclic group may have a substituent, for example, a substituent similar to the substituent that the aromatic hydrocarbon may have. Preferred R ¹ and R ² include an alkyl group or alkenyl group optionally substituted with a halogen atom, a cycloalkyl group, an alkylphenyl group, a benzyl group, an alkylbenzyl group and the like.
More preferred R ¹ and R ² include an alkyl group having about 1 to 30 carbon atoms (preferably about 1 to 20, more preferably about 1 to 15) which may be substituted with a fluorine atom or a chlorine atom.

A and b are preferably integers of 1 to 5,
More preferably, it is an integer of 1 to 4. When a and b exceed 6, the production process of the compound becomes complicated. x and y are
It is preferably an integer of 0 to 2, and more preferably 0 or 1. The carbonate represented by the formula (1) is (1-
1) a compound in which x and y are both 0 (compound having no oxyalkylene group) and (1-2) a compound in which at least one of x and y is a positive integer (for example, 1) Compounds). Compound (1-2) generally has an increased flash point and improved safety as compared with compound (1-1).

Specific examples of the compound (1-1) include, for example, dimethyl carbonate, diethyl carbonate, diisopropyl carbonate, dibutyl carbonate, dipentyl carbonate, dihexyl carbonate, diheptyl carbonate, dioctyl carbonate, di (2)
-Ethylhexyl) carbonate, dilauryl carbonate, ditridecyl carbonate, ditetradecyl carbonate, dihexadecyl carbonate, di (hexyldecyl) carbonate, dioctadecyl carbonate,
Dieicosanyl carbonate, didocosanyl carbonate, di (octyldodecyl) carbonate, ditetracosanylcarbonate, di (trifluoroethyl) carbonate, di (perfluoropentylcarbonate), di (perfluorohexylcarbonate), methylethylcarbonate , Methyl isopropyl carbonate, methyl propyl carbonate, methyl butyl carbonate,
Methylhexyl carbonate, methyl heptyl carbonate, methyl octyl carbonate, methyl nonyl carbonate, methyl decyl carbonate, methyl dodecyl carbonate, octyl decyl carbonate, diallyl carbonate, dibutenyl carbonate, didedecenyl carbonate, dioleyl carbonate, dieraidyl carbonate , Dilinoleyl carbonate, dilinolenyl carbonate, diphenyl carbonate, dicresyl carbonate, di (butylphenyl) carbonate, di (nonylphenyl) carbonate, dibenzyl carbonate, dicyclohexyl carbonate, di (methylcyclohexyl) carbonate, difurfuryl carbonate, Di (tetrahydrofurfuryl) carbonate and the like can be mentioned.

The compound (1-2) includes, for example, methyl (methoxypropyl) carbonate, di (methoxypropyl) carbonate, methyl (ethoxypropyl) carbonate, di (ethoxypropyl) carbonate, di (butoxyethyl) Examples thereof include carbonate, butyl (butoxyethyl) carbonate, butyl (butoxybutyl) carbonate, butoxyethyl (butoxypropyl) carbonate, di (propoxypropyl) carbonate, and di (butoxypropyl) carbonate. The above carbonate esters can be used alone or in combination of two or more.

The solvent for washing and removing may be composed of the carbonate alone, or may be composed of the carbonate and another solvent. By using a carbonate ester and another solvent in combination, solubility in resist, dissolution rate,
In addition, it is possible to control the evaporation rate, and there is an advantage that the solvent preparation suitable for the apparatus and the substrate size can be easily performed. Examples of the other solvent include ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, benzyl ethyl ether, and dihexyl ether; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether Acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl acetate, butyl acetate, benzyl acetate, methyl lactate, ethyl lactate, methyl pyruvate, ethyl pyruvate, ethyl 2-ethoxypropionate, 3-ethoxypropionic acid Esters such as ethyl; ketones such as cyclohexanone and diisobutyl ketone ; Toluene, and aromatic hydrocarbons such as xylene. These solvents can be used alone or in combination of two or more.

The ratio of the carbonate in the washing solvent is preferably from 10 to 100% by weight, more preferably from 30 to 100% by weight.
100% by weight, particularly about 50 to 100% by weight,
It is often about 0 to 100% by weight (for example, 70 to 100% by weight).

[Coating Composition for Resist Formation and Resist] The solvent for cleaning and removing of the present invention can be applied to a wide variety of coating compositions for resist formation and resists. As the coating composition for forming a resist, a commonly used coating composition,
For example, a coating composition containing a photosensitive substance, a film-forming substance, and a solvent and capable of forming a resist that can be developed with an alkaline aqueous solution, and the like can be given. A particularly advantageous resist is a positive photoresist having various required characteristics that can be sufficiently adapted to recent ultrafine processing. Above all,
In particular, a resist composed of a quinonediazide-based photosensitive substance and a film-forming substance is preferable.

Examples of the quinonediazide-based photosensitive material include (1) quinonediazidesulfonic acid esters (quinonediazides having a sulfonic acid ester group), and (2)
And quinonediazidesulfonic acid amides (quinonediazides having a sulfonic acid amide group).

(1) The quinonediazidesulfonic acid esters include, for example, esters formed by the reaction of quinonediazidesulfonic acids or their reactive derivatives (eg, acid halide derivatives) with a compound having a phenolic acid hydroxyl group (phenols). And compounds (including partial ester compounds). The (2) quinonediazidesulfonic acid amides include amide compounds (parts) formed by the reaction of the quinonediazidesulfonic acids or a reactive derivative thereof (eg, an acid halide derivative) with a compound having an amino group (amines). Amide compounds).

Examples of the quinonediazidesulfonic acids include o-benzoquinonediazidesulfonic acid such as benzoquinone-1,2-diazide-4-sulfonic acid;
O such as naphthoquin-1,2-diazide-5-sulfonic acid and naphthoquinone-1,2-diazide-4-sulfonic acid
-Naphthoquinonediazidesulfonic acid; anthraquinone-
O-Anthraquinonediazidesulfonic acid such as 1,2-diazide-5-sulfonic acid; and the like. Examples of the phenols include polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone; Gallic acid; gallic acid derivatives in which a part of phenolic hydroxyl groups are esterified or etherified; gallic esters such as alkyl gallate and aryl gallate; phenol; phenolic resins; alkoxyphenols such as p-methoxyphenol; dimethylphenol Alkyl phenols; polyhydroxybenzenes such as hydroquinone, pyrocatechol, pyrogallol, pyrogallol monomethyl ether, pyrogallol-1,3-dimethyl ether or partial alkyl ethers thereof; Polyhydroxynaphthalene; polyhydroxydiphenylalkane such as bisphenol A, polyhydroxydiphenylalkene, α, α ′, α ″ -tris (4-hydroxyphenyl) -1,3,5-triisopropylbenzene, 1- [1- ( Alkane having a plurality of hydroxyphenyl groups, such as 4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl)] benzene, tris (hydroxyphenyl) methane or a methyl-substituted product thereof, or Alkenes, etc. Examples of the amines include aniline,
and aromatic amines such as aniline derivatives such as p-aminodiphenylamine.

Preferred quinonediazide photosensitive materials include polyhydroxybenzophenone and naphthoquinone-
1,2-diazide-5-sulfonic acid or naphthoquinone-
It includes a completely esterified product or a partially esterified product with 1,2-diazide-4-sulfonic acid, and particularly preferably those having an average degree of esterification of 70% or more. The quinonediazide-based photosensitive substance may be used alone, or two or more kinds may be used in combination.

The film-forming substance includes a substance having a functional group having an affinity for an alkali developer, for example, a substance having an acidic functional group such as a phenolic hydroxyl group and a carboxyl group. As such a film-forming substance, for example,
(1) a vinyl resin having a repeating unit in which a polymerizable double bond of a monomer having an acidic functional group and a polymerizable double bond is opened (including a homopolymer and a copolymer); (2) an acidic functional group Examples include a condensation resin having a condensation repeating unit having a group.

Examples of the monomer having an acidic functional group and a polymerizable double bond constituting the vinyl resin (1) include hydroxystyrene, hydroxy-α-methylstyrene, vinylbenzoic acid, carboxymethylstyrene, and carboxymethoxy. Styrene monomers having acidic functional groups such as styrene; α, β-unsaturated carboxylic acids such as (meth) acrylic acid, crotonic acid, maleic acid, itaconic acid, citraconic acid, mesaconic acid, and cinnamic acid; Can be illustrated.

The vinyl resin (1) may be composed of only a repeating unit corresponding to the monomer having an acidic functional group and a polymerizable double bond. You may have. As monomers corresponding to such other repeating units, for example, styrene, α
Styrene-based monomers such as methylstyrene and vinyltoluene; unsaturated dicarboxylic anhydrides such as maleic anhydride; α, β-unsaturated nitriles such as (meth) acrylonitrile; α, β-unsaturated such as (meth) acrylamide. Saturated amides; and monomers having a polymerizable double bond such as other vinyl monomers such as vinylaniline and vinylpyridine.

The condensation resin (2) includes a resin obtained by condensation of at least one phenol and at least one aldehyde, such as a novolak resin. Examples of the phenols include phenol, o-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 3,4-xylenol,
Examples include 3,5-xylenol, 2,3,5-trimethylphenol, and 3,4,5-trimethylphenol. Examples of the aldehydes include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propionaldehyde,
Phenylacetaldehyde and the like can be mentioned.

Preferred film-forming substances include, for example, novolak resins obtained from phenols such as phenol, cresol and xylenol and aldehydes, acrylic resins, styrene-acrylic acid copolymers, poly (hydroxystyrene) [polyvinyl phenol] ], Poly (vinylhydroxybenzoate) and alkali-soluble resins such as poly (vinylhydroxybenzal), among which cresol novolak resin is particularly preferable.
Preferred novolak resins include novolak resins having a weight-average molecular weight of 2000 to 20,000, preferably about 5,000 to 15,000, in which low molecular weight regions are cut. The film-forming substances may be used alone or in combination of two or more.

In the positive photoresist, the amount of the photosensitive substance is usually 10 to 40 parts by weight, preferably about 15 to 30 parts by weight, based on 100 parts by weight of the film forming substance. If the amount of the photosensitive substance is too large, the sensitivity tends to decrease. Conversely, if the amount is too small, it becomes difficult to obtain a preferable pattern shape.

The solvent constituting the resist-forming coating composition may be a conventional solvent, for example, the solvents exemplified as the other solvents in the washing and removing solvent (for example, ethers such as ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, etc.). Ester such as ethyl ether acetate) can be used. Further, as the solvent constituting the coating composition for forming a resist, the solvents exemplified as the above-mentioned solvent for washing and removal can be used.

The coating composition for forming a resist may contain, if necessary, a conventional additive having compatibility, for example, a dye (for example, a coumarin dye or an azo dye) or a dye for improving the performance of a resist film. Additional resins, plasticizers, stabilizers,
A coloring agent for making the pattern obtained by development more visible, a sensitizer for improving the sensitizing effect, a contrast improver, a surfactant and the like may be added.

[Manufacture of Electronic Component Substrate] Electronic component substrates used for microfabrication of semiconductor elements and the like are usually (1)
It is manufactured through a coating step of coating a resist-forming coating composition on a substrate and (2) a drying step of drying the coating composition applied on the substrate to form a resist.

In the coating step (1), a silicon wafer,
A coating composition for forming a resist is applied on a substrate such as a silicon wafer coated with an oxide film using a conventional coating means such as a spinner. In addition, the application includes, in addition to the application in a narrow sense, a case where a coating film is formed by spraying, dipping, or the like. When applying the coating composition for forming a resist on a substrate, a uniform coating film is often not formed on the surface of the substrate. Further, the coating composition often adheres to a portion where a resist should not be formed, such as an edge portion or a back surface portion of the substrate.

For example, when a spinner is used as a coating means, a substrate such as a wafer is held on a rotating plate rotated on a spin head, and a resist-forming coating composition is applied to a central portion of the rotating plate to form a rotating plate. When rotated, the coating composition diffuses radially due to the centrifugal force of the rotating plate, forming a coating on the entire surface of the substrate. FIG. 1 is a schematic partial cross-sectional view showing a state of a substrate when a coating composition for forming a resist is applied to a substrate 1 by a spinner. When the coating composition is applied onto the substrate 1 by a spinner, for example, on the surface of the substrate 1, the peripheral portion rises more than the central portion, and the film thickness of the peripheral coating film 3 is larger than the film thickness of the central coating film 2. Also increases. In addition, the coating composition adheres to the unnecessary portions such as the edge portion and the back surface portion of the substrate 1. Reference numerals 4 and 5 denote coating compositions adhered to the edge and back of the substrate 1, respectively.

In the drying step (2), the coating composition (coating film) applied on the substrate is dried by heating or the like to form a resist. In this case, after the application step, if the process immediately proceeds to the drying step without washing and removing the unnecessary coating composition, the thickness of the resist also becomes non-uniform. Is larger than the film thickness.
In addition, a resist is formed on an unnecessary portion such as an edge portion or a back surface portion of the substrate.

A feature of the method of the present invention is that, after the coating step (1) or after the drying step (2), the unnecessary coating composition or resist adhering to the substrate is removed by the cleaning and removing solvent. And a cleaning step of removing and cleaning the substrate.
In this cleaning step, unnecessary coating compositions or resists adhering to the peripheral portion, the edge portion, and the back surface portion of the substrate are removed by a cleaning treatment using the cleaning and removing solvent while, for example, rotating the substrate. The method of the cleaning treatment is not particularly limited.For example, the cleaning treatment is performed by dropping a solvent for cleaning and removal onto a peripheral portion of the base material using a nozzle, spraying, or preferably performing back rinsing. It can be carried out.

The amount of the solvent for cleaning and removal can be appropriately selected depending on the type of the resist, the number of rotations of the substrate, the film thickness, and the like.
When supplying from a nozzle, usually 10 to 100 ml / min,
Preferably, it is about 30 to 50 ml / min. Further, the processing time and the number of times of the cleaning processing can be appropriately set according to the type of the resist and the like. The washing may be performed at any time after the coating step (1) or after the drying step (2), and may be performed after the coating step (1) and after the drying step (2). It may be performed at both times.

As described above, by providing a washing step using the washing and removing solvent of the present invention in the process of manufacturing a base material for electronic parts, a high-quality electronic part with a uniform thickness of resist is formed. The substrate can be easily obtained. The cleaning solvent of the present invention exhibits excellent solubility in a wide range of resist-forming coating compositions and resists. It is also very useful for cleaning and removing the coating composition or the resist adhered or fixed to the equipment used in the coating step or the like (for example, equipment that comes into contact with the resist-forming coating composition such as a spinner cup).

[0037]

The cleaning solvent of the present invention exhibits excellent solubility in a wide variety of resist-forming coating compositions or resists. In particular, it exhibits excellent solubility even in a positive photoresist containing a quinonediazide-based photosensitive material having a high degree of esterification. Further, the solubility in the resist component is stable with time, and the resist component does not precipitate during the cleaning operation, and no residue of the resist component remains. Furthermore, it has appropriate drying properties, can efficiently uniform the thickness of a resist or the like on a substrate, and is excellent in safety. ADVANTAGE OF THE INVENTION According to the manufacturing method of the base material for electronic components of the present invention, it is possible to easily and efficiently obtain a high-quality base material for electronic components in which the thickness of the resist is uniform and the resist is not formed in unnecessary portions. it can.

[0038]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

Examples 1-3, Comparative Examples 1-4 2,3,4,4'-tetrahydroxybenzophenone 1
7.5 g of the esterification reaction product (average degree of esterification: 90%) of 4 mol of naphthoquin-1,2-diazide-5-sulfonyl chloride and 30 g of cresol novolak resin in 70 g of ethylene glycol monoethyl ether acetate. Thus, a coating composition for forming a positive photoresist was prepared. The obtained coating composition was applied to 7 sheets of 3
After coating on an inch silicon wafer by a spinner so as to have a dry film thickness of 10 μm, by heating on a hot plate at 120 ° C. for 90 seconds,
A silicon wafer having a resist film formed on the surface was obtained. Next, each solvent shown in Table 1 was placed in a beaker, and the seven silicon wafers were immersed in each solvent,
The time (dissolution time) until the resist film was completely dissolved and removed from the silicon wafer surface was measured. Table 1 shows the results. On the other hand, the above-mentioned coating composition for forming a positive photoresist was applied onto a 6-inch silicon wafer by using a spin coating apparatus (1H-360, manufactured by Mikasa Corporation) for 30 minutes.
The coating was performed at 00 rpm for 20 seconds to form a coating film having a thickness of 1.3 μm. Next, the number of revolutions was reduced to 1000 rpm, and the cleaning nozzle for jetting the back surface of the wafer of the same apparatus was used as shown in Table 1.
Were sprayed at a flow rate of 40 ml / min for 2 seconds, 5 seconds and 10 seconds, and the dissolution state of the edge resist of the silicon wafer at each spray time was observed and evaluated according to the following criteria. Table 1 shows the results. ：: The edge portion resist is completely dissolved. ：: The edge portion resist partially remains. X: Most of the edge portion resist remains. Note that the edge portion resist is the edge portion of the silicon wafer and It means a resist adhering to the back surface and an unnecessary peripheral resist raised above the film thickness at the center of the front surface of the silicon wafer. Each abbreviation in the table means the following compound. DMC: dimethyl carbonate DEC: diethyl carbonate MEK: methyl ethyl ketone MMPGAC: propylene glycol monomethyl ether acetate EMEGAC: ethylene glycol monoethyl ether acetate BA: butyl acetate

[Table 1] Examples 4 to 6, Comparative Examples 5 to 8 As esterification reaction products, esterification of 2,3,4-trihydroxybenzophenone 1 mol with naphthoquin-1,2-diazide-5-sulfonyl chloride 1.2 mol Except that 7.5 g of the reaction product (average degree of esterification: 40%) was used, the same operation as in Examples 1 to 3 was performed, and the dissolution time and the dissolution state when each solvent was used were examined.
Table 2 shows the results.

[0040]

[Table 2]

[Brief description of the drawings]

FIG. 1 is a schematic partial cross-sectional view showing a state of a substrate when a coating composition for resist formation is applied to the substrate by a spinner.

[Description of Signs] 1 Substrate 2 Coating film formed at center of substrate surface 3 Coating film formed at peripheral portion of substrate surface 4 Coating composition adhered to edge of substrate 5 Adhered to back surface of substrate Coating composition

Claims (3)

[Claims] 1. A solvent for washing and removing a coating composition or a resist for forming a resist, the solvent comprising a carbonate ester for washing and removing. 2. The solvent for cleaning and removing according to claim 1, wherein the carbonate ester is represented by the following formula (1). Embedded image (In the formula, R ¹ and R ² are the same or different and each represents a hydrocarbon group or a heterocyclic group which may have a substituent, and a and b are the same or different and are each an integer of 1 to 6. And x and y are the same or different and each represent 0 or a positive integer) 3. An electronic component comprising: (1) a coating step of applying a resist-forming coating composition on a substrate; and (2) a drying step of drying the coating composition applied on the substrate to form a resist. A method for producing a substrate for use, wherein the coating step (1)
A substrate for an electronic component, comprising: a cleaning step of removing unnecessary coating composition or resist adhering to a substrate by cleaning with the cleaning and removing solvent according to claim 1 after the drying step or after the drying step (2). Manufacturing method.