JPH11214286A - Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor wafer - Google Patents
Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor waferInfo
- Publication number
- JPH11214286A JPH11214286A JP1177498A JP1177498A JPH11214286A JP H11214286 A JPH11214286 A JP H11214286A JP 1177498 A JP1177498 A JP 1177498A JP 1177498 A JP1177498 A JP 1177498A JP H11214286 A JPH11214286 A JP H11214286A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- adhesion
- concentration
- vaporized
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体製造装置にお
いて、特にリソグラフィー工程において剥がれがなく、
且つ、パターン倒れのない感光性樹脂膜パターンの形成
を可能にする密着性強化材料の気化供給装置、及び感光
性樹脂膜の形成に先立って行う半導体ウエハの前処理方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
The present invention also relates to a device for vaporizing and supplying an adhesion-enhancing material capable of forming a photosensitive resin film pattern without pattern collapse, and to a method for pretreating a semiconductor wafer prior to formation of a photosensitive resin film.
【０００２】[0002]
【従来の技術】半導体装置の製造工程において、拡散層
を形成するためのイオン注入マスクやゲート電極のエッ
チングマスクなどとして感光性樹脂膜（以下、レジスト
と称す）パターンが良く用いられており、レジストパタ
ーンの出来映えが半導体装置の特性や歩留りに大きく影
響を与える。このレジストパターンは、レジスト塗布工
程とレジストの露光工程と現像工程によって形成され、
特にレジストパターンの形状安定性の確保を図る上でレ
ジスト塗布工程が重要となってきている。2. Description of the Related Art In the process of manufacturing a semiconductor device, a photosensitive resin film (hereinafter referred to as "resist") pattern is often used as an ion implantation mask for forming a diffusion layer or an etching mask for a gate electrode. The quality of the pattern greatly affects the characteristics and yield of the semiconductor device. This resist pattern is formed by a resist coating step, a resist exposing step, and a developing step,
In particular, a resist coating process is becoming important in securing the shape stability of a resist pattern.
【０００３】以下、レジスト塗布工程において、その前
処理として使用されるレジストの密着性強化材料の気化
供給装置、及び該密着性強化材料を用いたレジスト塗布
の前処理（密着性強化処理）の方法を図を用いて説明す
る。[0003] In the following, in the resist coating step, a vaporization supply device for a resist adhesion enhancing material used as a pretreatment thereof, and a method of resist coating pretreatment (adhesion enhancing treatment) using the adhesion enhancing material. Will be described with reference to the drawings.
【０００４】図３は、従来のレジストの密着性強化を担
う密着性強化材料の気化供給装置の概略断面図である。
同図において１は液体材料タンク、２は液体材料供給ラ
イン、３は液体加圧圧送ガス供給管である。密着性強化
材料の気化供給は、液体加圧圧送ガス６で液体材料タン
ク１の液体を加圧あるいはバブリングして気化ガス送出
管５に気化した密着性強化材料７を送り出すことで行わ
れる。この時、送出される気化ガス７の質量流量は、液
体加圧圧送ガス６の質量流量を質量流量計４で一定に保
つ構成にしている。FIG. 3 is a schematic sectional view of a conventional apparatus for vaporizing and supplying an adhesion enhancing material for enhancing the adhesion of a resist.
In FIG. 1, reference numeral 1 denotes a liquid material tank, 2 denotes a liquid material supply line, and 3 denotes a liquid pressurized gas supply pipe. The vaporization and supply of the adhesion enhancing material is performed by pressurizing or bubbling the liquid in the liquid material tank 1 with the liquid pressurized gas 6 and sending out the vaporized adhesion enhancing material 7 to the vaporized gas delivery pipe 5. At this time, the mass flow rate of the vaporized gas 7 to be sent out is configured so that the mass flow rate of the liquid pressurized gas 6 is kept constant by the mass flow meter 4.
【０００５】上記気化供給装置を用いた場合のレジスト
塗布の前処理方法を説明する。まず、液体加圧圧送ガス
６で液体材料タンク１の液体を加圧あるいはバブリング
して気化ガス送出管５に気化した密着性強化材料７を送
り出す。この送出される気化ガスの質量流量は、液体加
圧圧送ガス６の質量流量を質量流量計４で一定に保つこ
とで制御する。こうして得られた気化ガス７を気化ガス
送出管５より別ユニットに送り、半導体ウエハ表面に均
一に供給し、所定温度、真空度のもと、密着性強化処理
を終了する。[0005] A pretreatment method for resist coating in the case of using the vaporization supply device will be described. First, the liquid in the liquid material tank 1 is pressurized or bubbled by the liquid pressurized gas 6 to send out the vaporized adhesion enhancing material 7 to the vaporized gas delivery pipe 5. The mass flow rate of the delivered vaporized gas is controlled by keeping the mass flow rate of the liquid pressurized gas 6 constant by the mass flow meter 4. The vaporized gas 7 thus obtained is sent from the vaporized gas delivery pipe 5 to another unit, uniformly supplied to the surface of the semiconductor wafer, and the adhesion strengthening process is completed under a predetermined temperature and a degree of vacuum.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記の
ような従来の気化供給装置及び前処理方法においては、
供給される気化ガスの濃度が管理制御されておらず、そ
れが薄くなったとき、レジストパターンの倒壊、剥がれ
が発生するという問題があった。However, in the above-described conventional vaporization supply device and pretreatment method,
There is a problem in that the concentration of the supplied vaporized gas is not managed and controlled, and when it becomes thin, the resist pattern collapses or peels off.
【０００７】本発明は、上記従来の問題点を解決するも
のであり、レジストパターンの倒壊、剥がれの発生を低
減できる優れた密着性強化材料の気化供給装置及び半導
体ウエハの前処理方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and provides an excellent apparatus for vaporizing and supplying an adhesion-enhancing material and a method for pretreating a semiconductor wafer, which can reduce the occurrence of collapse and peeling of a resist pattern. The purpose is to:
【０００８】[0008]
【課題を解決するための手段】この目的を解決するため
に、本発明の密着性強化材料の気化供給装置は、半導体
ウエハ表面に感光性樹脂膜を形成するのに先立って行う
密着性強化処理に使用する密着性強化材料の気化供給装
置であって、前記密着性強化材料の気化ガス濃度を測定
し、制御するユニットを備えたことを特徴とする。In order to solve this object, an apparatus for vaporizing and supplying an adhesion enhancing material according to the present invention comprises an adhesion enhancing treatment performed prior to forming a photosensitive resin film on a semiconductor wafer surface. The apparatus for vaporizing and supplying the adhesion enhancing material used in the above is characterized by comprising a unit for measuring and controlling the vaporized gas concentration of the adhesion enhancing material.
【０００９】また、本発明の半導体ウエハの前処理方法
は、半導体ウエハ表面に感光性樹脂膜を形成するのに先
立って行う前処理の方法であって、前記感光性樹脂膜の
密着性を強化する密着性強化材料を気化し、所定濃度に
維持してこれを供給する工程と、半導体ウエハを所定の
温度、真空度に維持した後、前記気化した密着性強化材
料を半導体ウエハ表面に供給する工程とを有することを
特徴とする。Further, the pretreatment method for a semiconductor wafer according to the present invention is a pretreatment method performed prior to forming a photosensitive resin film on the surface of a semiconductor wafer, wherein the adhesion of the photosensitive resin film is enhanced. Vaporizing the adhesion enhancing material to be supplied and maintaining it at a predetermined concentration and supplying the same, and after maintaining the semiconductor wafer at a predetermined temperature and a vacuum degree, supplying the vaporized adhesion enhancing material to the surface of the semiconductor wafer And a process.
【００１０】そして、気化した密着性強化材料の濃度の
制御は、気化ガス濃度を測定し、得られた測定値を設定
値と比較し、比較の結果に基づいて気化ガスを送出する
液体加圧圧送ガスの供給を調整することにより行う。The concentration of the vaporized adhesion enhancing material is controlled by measuring the concentration of the vaporized gas, comparing the measured value with a set value, and, based on the result of the comparison, the liquid pressurizing pressure for delivering the vaporized gas. This is performed by adjusting the supply of gas supply.
【００１１】上記の構成によって、供給される密着性強
化材料の気化ガス濃度が一定に保たれるため、レジスト
パターンの倒壊、剥がれの発生を防止することが可能と
なる。With the above structure, the concentration of the vaporized gas of the supplied adhesion enhancing material is kept constant, so that it is possible to prevent the resist pattern from collapsing and peeling off.
【００１２】[0012]
【発明の実施の形態】以下、本発明の密着性強化材料の
気化供給装置及び半導体ウエハの前処理方法を実施例を
用いて詳しく説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an apparatus for vaporizing and supplying an adhesion enhancing material and a method for pretreating a semiconductor wafer according to the present invention will be described in detail with reference to examples.
【００１３】図１は本発明に係わる密着性強化材料の気
化供給装置の一実施例の概略断面図である。FIG. 1 is a schematic sectional view of one embodiment of a device for vaporizing and supplying an adhesion reinforcing material according to the present invention.
【００１４】この実施例の気化供給装置は、液体材料タ
ンク１１と、液体材料供給ライン１２と、液体加圧圧送
ガス供給管１３と、液体加圧圧送ガスの質量流量、加圧
量を制御する制御ユニット１４と、気化ガス送出管１５
と、気化ガスの質量流量計１６と、気化ガスの濃度検出
器１７と、濃度比較制御装置１８と、温度制御ヒーター
１９により構成される。The vaporizing supply apparatus of this embodiment controls a liquid material tank 11, a liquid material supply line 12, a liquid pressurized gas supply pipe 13, and a mass flow rate and a pressurized amount of the liquid pressurized gas. Control unit 14 and vaporized gas delivery pipe 15
, A vaporized gas mass flow meter 16, a vaporized gas concentration detector 17, a concentration comparison control device 18, and a temperature control heater 19.
【００１５】さて、その機構を説明する。液体材料タン
ク１１に液体加圧圧送ガス（Ｎ2、Ａｒ等の不活性ガ
ス）６を供給し、液体状態の密着性強化材料（ＨＭＤ
Ｓ、ＩＰＤＴＭＳ等）を加圧あるいはバブリングするこ
とにより気化させ、それを気化ガス送出管１５より製品
処理室の方へ送る。この時、液体加圧タンク１１は温度
制御ヒーター１９によって所定の温度に保っておくほう
が望ましい。この機構により気化したガスの濃度は気化
ガス送出管１５より一定時間間隔でサンプリングする方
法で、ＳｎＯ2等より構成される半導体センサーからな
る気化ガスの濃度検出器１７により測定し、その結果を
電気信号に変換し、濃度比較制御装置１８により設定値
との差を検出し、液体加圧圧送ガス６の質量流量、加圧
量を制御する制御ユニット１４により液体に加圧する不
活性ガス６の質量流量および加圧量を調整する。この
際、サンプリングした気化ガスは、有機排気系に送り密
着強化処理には使用しない。また、気化したガスの質量
流量は質量流量計１６により測定し、必要に応じてこれ
により質量流量を一定量に維持する。また、気化して減
少した液体は、その残量をリアルタイムに管理し不足分
は液体材料供給ライン１２より自動供給されるようにし
ている。こうすることで、気化に使用される液体の容量
を一定に保ち、気化ガスの濃度が変動しないようにして
いる。Now, the mechanism will be described. A liquid pressurized gas (inert gas such as N 2 , Ar) 6 is supplied to the liquid material tank 11, and the adhesion enhancing material (HMD) in a liquid state is supplied.
S, IPDTMS, etc.) is vaporized by pressurizing or bubbling, and is vaporized from the vaporized gas delivery pipe 15 to the product processing chamber. At this time, it is desirable that the liquid pressurized tank 11 be kept at a predetermined temperature by the temperature control heater 19. The concentration of the gas vaporized by this mechanism is measured by a vaporized gas concentration detector 17 composed of a semiconductor sensor composed of SnO 2 or the like by sampling at a fixed time interval from the vaporized gas delivery pipe 15 and the result is electrically measured. The signal is converted into a signal, the difference from the set value is detected by the concentration comparison control device 18, and the mass of the inert gas 6 is pressurized to the liquid by the control unit 14 which controls the mass flow rate and the pressurized amount of the liquid pressurized gas 6 Adjust the flow and pressurization. At this time, the vaporized gas sampled is sent to the organic exhaust system and is not used for the adhesion strengthening treatment. In addition, the mass flow rate of the vaporized gas is measured by the mass flow meter 16, and the mass flow rate is maintained at a constant value as required. The remaining amount of the liquid which has been reduced by vaporization is managed in real time, and the shortage is automatically supplied from the liquid material supply line 12. By doing so, the volume of the liquid used for vaporization is kept constant, and the concentration of the vaporized gas does not fluctuate.
【００１６】上記本発明の密着性強化材料の気化供給装
置を用いた場合のレジスト塗布前の半導体ウエハの前処
理方法を説明する。A method for pre-treating a semiconductor wafer before applying a resist when the above-described vaporization supply apparatus for an adhesion enhancing material of the present invention is used will be described.
【００１７】まず、図２に示すように、レジスト膜を塗
布する半導体ウエハ２０を熱板２１の上に固定し、排気
口２２から処理室２４内の空気を抜き、弱い真空状態に
し、且つ、所定の温度に保つ。First, as shown in FIG. 2, a semiconductor wafer 20 to be coated with a resist film is fixed on a hot plate 21, air in a processing chamber 24 is evacuated from an exhaust port 22, and a weak vacuum state is established. Keep at the prescribed temperature.
【００１８】次に、気化ガスの供給管１５より送られて
きた気化ガス２３を半導体ウエハ２０の表面に均一に供
給する。この時、供給時間が長いとレジスト膜と半導体
ウエハとの密着性は強くなるため、希望の密着性になる
ように供給時間を調整する。Next, the vaporized gas 23 sent from the vaporized gas supply pipe 15 is uniformly supplied to the surface of the semiconductor wafer 20. At this time, if the supply time is long, the adhesion between the resist film and the semiconductor wafer becomes strong. Therefore, the supply time is adjusted so as to obtain the desired adhesion.
【００１９】次に、気化ガスの供給を止め、半導体ウエ
ハ２０の表面に付着した気化ガスを十分乾燥させる。こ
の乾燥が不十分であると、密着性が低下するため乾燥時
間は十分設けるようにする。Next, the supply of the vaporized gas is stopped, and the vaporized gas attached to the surface of the semiconductor wafer 20 is sufficiently dried. If the drying is insufficient, the adhesion is reduced, so that a sufficient drying time is provided.
【００２０】次に、処理室２４内を大気状態に戻し、レ
ジスト塗布前の密着性強化処理を終了する。Next, the inside of the processing chamber 24 is returned to the atmospheric state, and the adhesion strengthening process before resist application is completed.
【００２１】[0021]
【発明の効果】以上のように本発明によれば、レジスト
膜の密着性強化材料の気化ガス濃度を一定に保つ制御装
置を装備することにより、レジスト膜の密着性を常に一
定に保つことができ、レジストパターンの倒壊、剥がれ
の発生を防止することができる。As described above, according to the present invention, by equipping the control device for keeping the concentration of the vaporized gas of the material for enhancing the adhesion of the resist film constant, the adhesion of the resist film can always be kept constant. Thus, collapse and peeling of the resist pattern can be prevented.
【図１】 本発明の一実施例に係わる密着性強化材料の
気化供給装置の構成の概略を模式的に示した断面図であ
る。FIG. 1 is a cross-sectional view schematically showing an outline of a configuration of an apparatus for vaporizing and supplying an adhesion reinforcing material according to one embodiment of the present invention.
【図２】 本発明の半導体ウエハの表面処理方法を実施
する密着性強化処理装置の一例の概略を模式的に示した
断面図である。FIG. 2 is a cross-sectional view schematically showing an outline of an example of an adhesion strengthening treatment apparatus for performing a surface treatment method for a semiconductor wafer of the present invention.
【図３】 従来の密着性強化材料の気化供給装置の一例
の構成の概略を模式的に示した断面図である。FIG. 3 is a cross-sectional view schematically showing a configuration of an example of a conventional apparatus for vaporizing and supplying an adhesion reinforcing material.
１ 液体材料タンク ２ 液体材料供給ライン ３ 液体加圧圧送ガス供給管 ４ 質量流量計 ５ 気化ガス送出管 ６ 液体加圧圧送ガス（キャリアガス） ７ 気化ガス（気化した密着性強化材料） ８ 廃ガス １１ 液体材料タンク １２ 液体材料供給ライン １３ 液体加圧圧送ガス供給管 １４ 液体加圧圧送ガスの質量流量・加圧量制御ユニッ
ト １５ 気化ガスの送出管 １６ 気化ガスの質量流量計 １７ 気化ガスの濃度検出器 １８ 濃度比較制御装置 １９ 温度制御ヒーター ２０ 半導体ウエハ ２１ 熱板 ２２ 排気口 ２３ 気化ガス（気化した密着性強化材料） ２４ 密着性強化処理室DESCRIPTION OF SYMBOLS 1 Liquid material tank 2 Liquid material supply line 3 Liquid pressurized pumping gas supply pipe 4 Mass flow meter 5 Vaporized gas sending pipe 6 Liquid pressurized pumping gas (carrier gas) 7 Vaporized gas (vaporized adhesion strengthening material) 8 Waste gas Reference Signs List 11 liquid material tank 12 liquid material supply line 13 liquid pressurized pumping gas supply pipe 14 mass flow rate / pressurization amount control unit of liquid pressurized pumping gas 15 vaporized gas delivery pipe 16 vaporized gas mass flow meter 17 vaporized gas concentration Detector 18 Concentration comparison control device 19 Temperature control heater 20 Semiconductor wafer 21 Hot plate 22 Exhaust port 23 Vaporized gas (vaporized adhesion enhancing material) 24 Adhesion enhancing processing chamber
Claims (4)
するのに先立って行う密着性強化処理に使用する密着性
強化材料の気化供給装置であって、前記密着性強化材料
の気化ガス濃度を測定し、制御するユニットを備えたこ
とを特徴とする密着性強化材料の気化供給装置。An apparatus for vaporizing and supplying an adhesion enhancing material used in an adhesion enhancing treatment performed prior to forming a photosensitive resin film on a surface of a semiconductor wafer, comprising: An apparatus for vaporizing and supplying an adhesion enhancing material, comprising a unit for measuring and controlling.
定し、制御するユニットが、気化ガス濃度を測定するユ
ニットと、得られた測定値を設定値と比較するユニット
と、前記比較の結果に基づいて前記気化ガスを送出する
液体加圧圧送ガスの供給を調整するユニットとを有する
ことを特徴とする請求項１に記載の密着性強化材料の気
化供給装置。2. A unit for measuring and controlling a vaporized gas concentration of the adhesion enhancing material, a unit for measuring a vaporized gas concentration, a unit for comparing an obtained measured value with a set value, and a result of the comparison. 2. A device for vaporizing and supplying an adhesion enhancing material according to claim 1, further comprising: a unit for adjusting the supply of the liquid pressurized gas for supplying the vaporized gas on the basis of the pressure.
するのに先立って行う前処理の方法であって、前記感光
性樹脂膜の密着性を強化する密着性強化材料を気化し、
所定濃度に維持してこれを供給する工程と、半導体ウエ
ハを所定の温度、真空度に維持した後、前記気化した密
着性強化材料を半導体ウエハ表面に供給する工程とを有
することを特徴とする半導体ウエハの前処理方法。3. A method of pretreatment performed prior to forming a photosensitive resin film on a semiconductor wafer surface, wherein the adhesion enhancing material for enhancing the adhesion of the photosensitive resin film is vaporized,
A step of supplying the semiconductor wafer at a predetermined concentration and supplying the same, and a step of supplying the vaporized adhesion enhancing material to the surface of the semiconductor wafer after maintaining the semiconductor wafer at a predetermined temperature and a degree of vacuum. Semiconductor wafer pretreatment method.
持する工程が、気化ガス濃度を測定するステップと、得
られた測定値を設定値と比較するステップと、前記比較
の結果に基づいて前記気化ガスを送出する液体加圧圧送
ガスの供給を調整するステップとからなることを特徴と
する請求項３に記載の半導体ウエハの前処理方法。4. The method according to claim 1, wherein the step of maintaining the concentration of the vaporized adhesion enhancing material comprises: measuring a vaporized gas concentration; comparing the obtained measured value with a set value; 4. The method according to claim 3, further comprising the step of adjusting the supply of the liquid pressurized gas for sending the vaporized gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1177498A JPH11214286A (en) | 1998-01-23 | 1998-01-23 | Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1177498A JPH11214286A (en) | 1998-01-23 | 1998-01-23 | Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11214286A true JPH11214286A (en) | 1999-08-06 |
Family
ID=11787321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1177498A Pending JPH11214286A (en) | 1998-01-23 | 1998-01-23 | Apparatus for supplying vapor of adhesion reinforcing material for light-sensitive resin film, and pre-treatment of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11214286A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245593A (en) * | 2001-08-28 | 2006-09-14 | Nec Kagoshima Ltd | Substrate processing apparatus |
| JP2006261683A (en) * | 2001-08-28 | 2006-09-28 | Nec Kagoshima Ltd | Substrate treatment system |
| JP2009141329A (en) * | 2007-10-23 | 2009-06-25 | Applied Materials Inc | Plasma surface treatment for preventing pattern collapse in liquid immersion photolithography |
| JP2012038868A (en) * | 2010-08-05 | 2012-02-23 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, coating development apparatus and substrate processing method |
| JP2022104883A (en) * | 2020-12-30 | 2022-07-12 | セメス カンパニー，リミテッド | Substrate processing device and substrate processing method |
-
1998
- 1998-01-23 JP JP1177498A patent/JPH11214286A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245593A (en) * | 2001-08-28 | 2006-09-14 | Nec Kagoshima Ltd | Substrate processing apparatus |
| JP2006261683A (en) * | 2001-08-28 | 2006-09-28 | Nec Kagoshima Ltd | Substrate treatment system |
| JP4513985B2 (en) * | 2001-08-28 | 2010-07-28 | 日本電気株式会社 | Substrate processing equipment |
| JP2009141329A (en) * | 2007-10-23 | 2009-06-25 | Applied Materials Inc | Plasma surface treatment for preventing pattern collapse in liquid immersion photolithography |
| JP2012038868A (en) * | 2010-08-05 | 2012-02-23 | Tokyo Electron Ltd | Vaporizer, substrate processing apparatus, coating development apparatus and substrate processing method |
| JP2022104883A (en) * | 2020-12-30 | 2022-07-12 | セメス カンパニー，リミテッド | Substrate processing device and substrate processing method |
| US11789364B2 (en) | 2020-12-30 | 2023-10-17 | Semes Co., Ltd. | Apparatus for treating substrate and method for treating substrate |
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