JPH11211586A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device in which thermal stress applied to a semiconductor chip can be detected easily. SOLUTION: The semiconductor device comprising a semiconductor chip mounted on a substrate 2 is provided, at specified positions thereof, with elements 3 for detecting strain of the chip 1 and a temperature measuring element 8 disposed closely to the elements 3. An electric signal is applied to the strain detecting elements 3 and the temperature measuring element 8. Measuring terminals 5, 5a to be connected with electrodes 4, 4a for taking out respective outputs are formed on the substrate 2 and the measuring terminals 5, 5a are connected with the electrodes 4, 4a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device capable of detecting thermal stress when a semiconductor chip is mounted on a substrate.

[0002]

2. Description of the Related Art Conventionally, when analyzing and evaluating a thermal stress applied when a semiconductor chip is mounted on a substrate, it has been necessary to analyze a failure mode or an analysis by simulation.

[0003]

However, in the above-described analysis and evaluation methods, there is a problem that a model pattern needs to be created, and this operation requires a lot of time.

[0004] The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device which can easily detect thermal stress applied to a semiconductor chip.

[0005]

According to the first aspect of the present invention,
A semiconductor device in which a semiconductor chip is mounted on a substrate, the semiconductor device having a strain detecting element for detecting a distortion of the semiconductor chip at a predetermined position in the semiconductor chip, and a temperature detecting means for detecting a temperature near the distortion detecting element. Forming a temperature measuring element, forming an electrode for applying an electric signal to the strain detecting element and the temperature measuring element and taking out each output to the outside, and forming a measurement for connecting to the electrode on the substrate. And a terminal for measurement is connected to the electrode for measurement.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the strain detecting element is a piezoresistive element.

According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the strain detecting element is a capacitance type element.

According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the temperature measuring element is constituted by a diode.

According to a fifth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the temperature measuring element is formed of a platinum thin film.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of a semiconductor device according to an example of an embodiment of the present invention. The semiconductor device of the present embodiment is obtained by mounting a semiconductor chip 1 on a substrate 2 by die bonding. A piezoresistive element 3 as a strain detecting element is formed at a predetermined location, that is, at a location where distortion is to be detected, on the semiconductor chip 1. An electrode 4 to be connected is formed. A measuring terminal 5 is formed at a position near the electrode 4 in a state where the semiconductor chip 1 is mounted on the peripheral edge of the substrate 2. The electrode 4 and the measuring terminal 5 are connected by wire bonding a wire 6. Further, a diode 8 is formed near the piezoresistive element 3 as a temperature measuring element. And
As in the case of the piezoresistive element 3, the electrode 4a for the diode 8, the measuring terminal 5a, the wire 6a, and the connecting wire 7a
Is formed. Further, as shown in FIG.
And completed.

Here, the piezoresistive element 3 can be formed, for example, by doping a silicon wafer with boron. As shown in FIG. 3, the diode 8 is formed by doping a silicon wafer with boron to form a P-type semiconductor 81 and by doping phosphorus with an N-type semiconductor 82.
Is formed. The formation of the P-type semiconductor 81 can be performed in the same step as the formation of the piezoresistive element 3.

Incidentally, as the distortion detecting element, a capacitance type element may be used instead of the piezoresistive element 3. For example, as shown in FIG. 4, an electrode 13 of Al or the like is formed on a surface of a silicon wafer 12 provided with an insulating film 11 such as an oxide film, 13
Except for a, an insulating film 14 such as an oxide film is formed (b), and an electrode 15 is further formed thereon (c). Electrodes 13, 15
This constitutes the capacitor C. In this case, since the capacitance of the capacitor C changes due to the distortion of the semiconductor chip 1, the distortion of the semiconductor chip 1 can be detected.

As a temperature measuring element, a platinum thin film 10 may be used instead of the diode 8 as shown in FIG. The platinum thin film 10 is formed by vapor deposition or the like.

In the semiconductor device of the present embodiment, if stress is applied to the semiconductor chip 1 in the die bonding step or the resin sealing step and the semiconductor chip 1 is distorted, the resistance value of the piezoresistive element 3 changes. If a resistance value of the piezoresistive element 3 is measured by applying an electric signal from the outside via the measuring terminal 5, distortion of the semiconductor chip 1 can be detected by a change in the resistance value. In the case where the temperature environment such as a heat cycle is constantly changing, the temperature can be detected by the diode 8 as a temperature measuring element formed in the vicinity of the piezoresistive element 3, so that the thermal stress of the semiconductor chip 1 is detected. You can.

Therefore, if the piezoresistive element 3 and the diode 8 are formed at a place where the thermal stress of the semiconductor chip 1 is to be detected, the thermal stress applied to the place can be easily detected.

The piezoresistive element 3 and the diode 8
Is formed in a portion of the semiconductor chip 1 where there is no circuit (not shown), even if the semiconductor device has been subjected to thermal stress inspection, it can be used normally.

[0017]

As described above, according to the first to fifth aspects of the present invention, there is provided a semiconductor device having a semiconductor chip mounted on a substrate, wherein the semiconductor chip is provided at a predetermined position in the semiconductor chip. Forming a strain detecting element for detecting the distortion of the element and a temperature measuring element for detecting the temperature in the vicinity of the distortion detecting element, applying an electric signal to the distortion detecting element and the temperature measuring element and outputting each of the signals. An electrode for taking out to the outside is formed, and a measurement terminal for connecting to the electrode is formed on the substrate, and the measurement terminal and the electrode are connected to each other. A semiconductor device capable of easily detecting thermal stress was provided.

[Brief description of the drawings]

FIG. 1 is a schematic view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a state in which the semiconductor device is sealed with a resin.

FIG. 3 is a schematic cross-sectional view showing a state where a diode according to the present invention is formed.

FIG. 4 is a process chart showing a method for forming a capacitance element according to the present invention.

FIG. 5 is a schematic cross-sectional view showing a state where a platinum thin film according to the present invention is formed.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Substrate 3 Piezoresistive element 4, 4a Electrode 5, 5a Measurement terminal 6, 6a Wire 7, 7a Connection wiring 8 Diode 9 Sealing resin

Claims (5)

[Claims] 1. A semiconductor device having a semiconductor chip mounted on a substrate, comprising: a distortion detecting element for detecting distortion of the semiconductor chip at a predetermined position in the semiconductor chip; and a temperature detecting element near the distortion detecting element. Forming a temperature measuring element for detecting, and forming an electrode for applying an electric signal to the strain detecting element and the temperature measuring element and extracting each output to the outside, the substrate, the electrode and A semiconductor device, wherein a measuring terminal for connection is formed, and the measuring terminal is connected to the electrode. 2. The semiconductor device according to claim 1, wherein said strain detecting element is a piezoresistive element. 3. The semiconductor device according to claim 1, wherein said strain detecting element is a capacitance type element. 4. The semiconductor device according to claim 1, wherein said temperature measuring element is constituted by a diode. 5. The semiconductor device according to claim 1, wherein said temperature measuring element is made of a platinum thin film.