JPH11209899A - Formation of plating solution - Google Patents

Formation of plating solution

Info

Publication number
JPH11209899A
JPH11209899A JP1472198A JP1472198A JPH11209899A JP H11209899 A JPH11209899 A JP H11209899A JP 1472198 A JP1472198 A JP 1472198A JP 1472198 A JP1472198 A JP 1472198A JP H11209899 A JPH11209899 A JP H11209899A
Authority
JP
Japan
Prior art keywords
plating
cathode
plating solution
anode
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1472198A
Other languages
Japanese (ja)
Inventor
Hitoshi Tanaka
仁志 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP1472198A priority Critical patent/JPH11209899A/en
Publication of JPH11209899A publication Critical patent/JPH11209899A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide the method for excellently and stably forming a plating soln. using a plating soln. forming tank with the inside divided by a diaphragm. SOLUTION: The inside of a plating soln. tank 1 is divided with a diaphragm into an anode compartment 3 and a cathode compartment 4, and a current is applied between a plating metal 6 set in a plating soln. 5 in the anode compartment 3 and a cathode 8 set in an electrolyte 7 in the cathode compartment 4 to elute the metal ion into the plating soln. 5, and a plating soln. is formed. In this case, since a smoothing agent is added to the electrolyte 7 in the cathode compartment 4, the metal ion mixed in the electrolyte 7 is deposited smoothly and densely on the cathode 8 and grown dendritically, hence the diaphragm 2 is never broken, and the plating soln. 5 is excellently and stably formed. The spent cathode 8 having the smooth and dense surface is economically reused as such as the anode 6. Further, when a cation-exchange membrane 2 is used as the diaphragm, the intrusion of anion into the plating soln. 5 is prevented, and the acid concn. of the soln. 5 is stabilized.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、隔膜で仕切っため
っき液生成槽を用いてめっき液を良好に安定して生成す
る方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a plating solution satisfactorily and stably using a plating solution producing tank partitioned by a diaphragm.

【0002】[0002]

【従来の技術】めっき槽におけるめっき金属イオンの供
給は、めっき槽の陽極にめっき金属を用いる方法が一般
的であるが、この方法は陽極の消耗に伴い電極間距離が
変動し、また陽極の定期的交換を必要とするなどの難点
がある。そこで、めっき槽の陽極に不溶性電極を用い、
めっき液は別途めっき液生成槽にて生成したものを供給
する方法が実用されている。この供給用めっき液は、め
っき金属塩やめっき金属を酸などで溶解する方法、めっ
き金属を電解する方法などにより生成される。
2. Description of the Related Art Generally, plating metal ions are supplied to a plating tank by using a plating metal as an anode of the plating tank. However, in this method, the distance between the electrodes fluctuates as the anode is consumed. There are drawbacks such as the need for periodic replacement. Therefore, using an insoluble electrode for the anode of the plating tank,
A method of supplying a plating solution separately generated in a plating solution generation tank has been put into practical use. The supply plating solution is generated by a method of dissolving a plating metal salt or a plating metal with an acid or the like, a method of electrolyzing a plating metal, or the like.

【0003】前記のめっき金属を電解する方法は、例え
ば、めっき液生成槽を陰イオン交換膜(隔膜)で陽極室
と陰極室とに仕切り、前記陽極室内のめっき液中に配し
た陽極(めっき金属)と陰極室内の電解液中に配した陰
極との間に電流を流して陽極からめっき金属イオンをめ
っき液中に溶出させ、このめっき金属イオンを、その陰
極室への侵入を陰イオン交換膜で抑えて陽極室(めっき
液)に滞留させてめっき液を生成する方法である。この
陽極室で生成されるめっき液は、めっき槽に循環して用
いられる。
[0003] In the method of electrolyzing the plating metal, for example, a plating solution producing tank is divided into an anode chamber and a cathode chamber by an anion exchange membrane (diaphragm), and an anode (plating solution) provided in the plating solution in the anode chamber is formed. An electric current is passed between the metal) and the cathode disposed in the electrolytic solution in the cathode chamber to elute the plating metal ions from the anode into the plating solution, and the plating metal ions enter the cathode chamber by anion exchange. This is a method in which a plating solution is generated by holding the film and staying in an anode chamber (plating solution). The plating solution generated in the anode chamber is circulated and used in a plating tank.

【0004】[0004]

【発明が解決しようとする課題】しかし、前述のめっき
液生成槽を陰イオン交換膜で仕切る方法は、陽極室に陰
イオンが侵入し易く、侵入した陰イオンは陽極にて放電
して酸を形成するため、めっき液の酸濃度が変動する。
このため酸を除去する装置が必要となりコスト的に不利
である。
However, in the above-mentioned method of partitioning the plating solution producing tank with an anion exchange membrane, the anions easily enter the anode chamber, and the entered anions are discharged at the anode to remove the acid. Because of the formation, the acid concentration of the plating solution fluctuates.
For this reason, a device for removing the acid is required, which is disadvantageous in cost.

【0005】そこで、本発明者等はめっき液生成槽を陽
イオン交換膜(隔膜)で仕切り、陽極室への陰イオンの
侵入防止を試みた。その結果、めっき液の酸濃度が一定
に保持されることが確認された。しかし、この方法は、
図2に示すように、めっき液生成槽1内のめっき金属イ
オンM+ が陽イオン交換膜2を透過して陰極室4の電解
液7に少しづつ混入し、これが陰極8上に析出し、この
析出物11は(図示するように)樹枝状に成長して陽イオ
ン交換膜2を破損し、さらに、この樹枝状析出物11は、
その先端が陽極室3内に達すると、陽極室3内のめっき
液5にはめっき金属イオンが大量に含まれるため、樹枝
状析出物11は急成長してたちまち陽極6にまで達して電
極8、6間をショートさせることが判った。また樹枝状
析出物11は電解液7の攪拌により剥離して陽イオン交換
膜2を損傷させる。なお、図2で10はめっき槽、12はめ
っき槽の陽極、13は被めっき材、9は循環ハイプであ
る。
Therefore, the present inventors have tried to prevent the intrusion of anions into the anode chamber by partitioning the plating solution producing tank with a cation exchange membrane (diaphragm). As a result, it was confirmed that the acid concentration of the plating solution was kept constant. However, this method
As shown in FIG. 2, the plating metal ions M + in the plating solution generating tank 1 permeate the cation exchange membrane 2 and gradually mix into the electrolyte solution 7 in the cathode chamber 4, which precipitates on the cathode 8, The precipitate 11 grows in a dendritic manner (as shown) and damages the cation exchange membrane 2. Further, the dendritic precipitate 11
When the tip reaches the inside of the anode chamber 3, the plating solution 5 in the anode chamber 3 contains a large amount of plating metal ions, so that the dendritic precipitate 11 grows rapidly and reaches the anode 6 and immediately reaches the anode 8. , 6 was short-circuited. Further, the dendritic precipitates 11 are separated by the stirring of the electrolyte solution 7 and damage the cation exchange membrane 2. In FIG. 2, reference numeral 10 denotes a plating tank, 12 denotes an anode of the plating tank, 13 denotes a material to be plated, and 9 denotes a circulation hype.

【0006】隔膜が陰イオン交換膜の場合は、金属イオ
ンの陰極室への混入は僅かであり、陰極上の樹枝状析出
物は陰イオン交換膜に達する程には成長しないが、電解
液の攪拌により剥離して陰イオン交換膜を損傷させるこ
とがある。本発明は、隔膜で仕切っためっき液生成槽を
用いてめっき液を良好に安定して生成する方法の提供を
目的とする。
[0006] When the membrane is an anion exchange membrane, the contamination of metal ions into the cathode compartment is slight, and dendritic deposits on the cathode do not grow to reach the anion exchange membrane. The anion exchange membrane may be peeled off by stirring and may be damaged. An object of the present invention is to provide a method for producing a plating solution satisfactorily and stably using a plating solution producing tank partitioned by a diaphragm.

【0007】[0007]

【課題を解決するための手段】請求項1記載の発明は、
めっき液生成槽を隔膜で陽極室と陰極室とに仕切り、陽
極室内のめっき液中に配した陽極(めっき金属)と陰極
室内の電解液中に配した陰極との間に電流を流してめっ
き液中にめっき金属イオンを溶出させるめっき液生成方
法において、前記陰極室内の電解液に析出平滑化剤を添
加することを特徴とするめっき液の生成方法である。
According to the first aspect of the present invention,
The plating solution generation tank is divided into an anode chamber and a cathode chamber by a diaphragm, and a current is applied between the anode (plating metal) disposed in the plating solution in the anode chamber and the cathode disposed in the electrolyte in the cathode chamber to perform plating. A plating solution producing method for eluting plating metal ions into a solution, wherein a plating smoothing agent is added to the electrolytic solution in the cathode chamber.

【0008】請求項2記載の発明は、隔膜が陽イオン交
換膜であることを特徴とする請求項1記載のめっき液の
生成方法である。
The invention according to claim 2 is the method for producing a plating solution according to claim 1, wherein the diaphragm is a cation exchange membrane.

【0009】請求項3記載の発明は、陰極室内の電解液
の析出平滑化剤の濃度を0.005g/リットル以上に制御す
ることを特徴とする請求項1または2記載のめっき液の
生成方法である。
According to a third aspect of the present invention, there is provided a method for producing a plating solution according to the first or second aspect, wherein the concentration of the deposition smoothing agent in the electrolytic solution in the cathode chamber is controlled to 0.005 g / liter or more. It is.

【0010】[0010]

【発明の実施の形態】以下に、本発明を図を参照して具
体的に説明する。図1は本発明のめっき液生成方法の実
施形態を示す説明図である。めっき液生成槽1が陽イオ
ン交換膜2で陽極室3と陰極室4とに仕切られており、
陽極室3内のめっき液5中に陽極(めっき金属)6が配
され、陰極室4内の電解液7中に陰極8が配されてい
る。めっき液5には被めっき材13が平滑で緻密なめっき
面を得るために、また電解液7には陰極8への樹枝状析
出を防止するために、それぞれ所定量の析出平滑化剤
(以下、平滑化剤と略記する)が添加されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings. FIG. 1 is an explanatory view showing an embodiment of the plating solution generation method of the present invention. A plating solution generating tank 1 is partitioned by a cation exchange membrane 2 into an anode chamber 3 and a cathode chamber 4;
An anode (plating metal) 6 is provided in a plating solution 5 in the anode chamber 3, and a cathode 8 is provided in an electrolyte 7 in the cathode chamber 4. In order to obtain a smooth and dense plated surface of the material 13 to be plated in the plating solution 5 and to prevent dendritic deposition on the cathode 8 in the electrolytic solution 7, a predetermined amount of a deposition smoothing agent (hereinafter, referred to as a plating smoothing agent) is used. , Abbreviated as a smoothing agent).

【0011】陽極6と陰極8間に電流を流して電解を行
うと、めっき液5中にめっき金属イオンが溶出し、この
めっき金属イオンの殆どは陽イオン交換膜2を透過しな
いでめっき液中に滞留してめっき液が生成される。めっ
き金属イオンの溶出と同時に発生する水素イオンは陽イ
オン交換膜2を透過して陰極8に達し、そこで放電して
水素ガスとなって大気中に放出される。めっき金属イオ
ンの一部は陽イオン交換膜2を透過して陰極8上に析出
するが、電解液7中に平滑化剤が添加されているので、
めっき金属イオンは陰極8上に平滑で緻密に析出する。
従って析出物が樹枝状に成長して、陽イオン交換膜2を
破損したり、陽極6と陰極8間をショートさせたりする
ことがない。陽極室にて生成されためっき液5は、循環
パイプ9を通してめっき槽10に循環される。めっき槽10
では、めっき液に平滑化剤が添加されているため、被め
っき材には平滑で緻密なめっきが施される。
When an electrolysis is performed by passing a current between the anode 6 and the cathode 8, plating metal ions are eluted into the plating solution 5, and most of the plating metal ions do not pass through the cation exchange membrane 2 but remain in the plating solution. And a plating solution is generated. The hydrogen ions generated simultaneously with the elution of the plating metal ions pass through the cation exchange membrane 2 and reach the cathode 8, where they are discharged and turned into hydrogen gas and released into the atmosphere. Some of the plating metal ions permeate through the cation exchange membrane 2 and precipitate on the cathode 8, but since the smoothing agent is added to the electrolytic solution 7,
The plating metal ions are deposited on the cathode 8 in a smooth and dense manner.
Therefore, the precipitates do not grow in a dendritic manner, and do not damage the cation exchange membrane 2 or short-circuit the anode 6 and the cathode 8. The plating solution 5 generated in the anode chamber is circulated to a plating tank 10 through a circulation pipe 9. Plating tank 10
In the above, since the smoothing agent is added to the plating solution, the material to be plated is subjected to smooth and dense plating.

【0012】本発明において、めっき液生成槽の陽極に
はめっき金属が用いられる。合金用めっき液は、陽極に
主成分金属を用い、副成分金属は塩としてめっき液に供
給する方法、或いは陽極自体を合金とする方法などが適
用される。前記陽極の形状は、板、棒、粒など任意であ
る。粒の場合は、めっき液に侵されない導電性バスケッ
ト、布袋などに入れて用いる。
In the present invention, a plating metal is used for the anode of the plating solution producing tank. As a plating solution for alloy, a method of using a main component metal for an anode and supplying a subcomponent metal as a salt to the plating solution, or a method of using the anode itself as an alloy is applied. The shape of the anode is arbitrary, such as a plate, a rod, and a grain. In the case of particles, they are used in a conductive basket, cloth bag or the like which is not affected by the plating solution.

【0013】めっき液生成槽の陰極の材質は特に制限さ
れないが、陽極(めっき金属)と同じ材質のものは使用
後そのまま陽極として再利用でき、また析出物を剥離し
易いステンレス鋼などは析出物の再利用が容易であり、
いずれもコスト的に有利である。
[0013] The material of the cathode of the plating solution producing tank is not particularly limited, but the same material as the anode (plating metal) can be reused as an anode after use, and stainless steel, etc., from which precipitates are easily peeled off, can be used as a precipitate. Is easy to reuse,
Each is advantageous in cost.

【0014】本発明において、陰極室の電解液は電解質
溶液であれば特に限定されないが、めっき液に混入して
もめっき品質に害が及ばないように、めっき液と同じ陰
イオンからなる酸溶液が望ましい。平滑化剤には、ゼラ
チン、ポリエチレングリコール、クレゾールスルホン酸
などのめっきや電解精錬に常用されている市販の薬剤が
用いられる。陰極室の電解液に添加する平滑化剤は、め
っき液に混入してもめっき品質に害を及ぼさないもの、
或いはめっき液に添加するものと同じ平滑化剤が望まし
い。複数の平滑化剤を併用しても差し支えない。
In the present invention, the electrolytic solution in the cathode chamber is not particularly limited as long as it is an electrolytic solution. However, an acid solution containing the same anion as the plating solution is used so that even if mixed in the plating solution, plating quality is not affected. Is desirable. As the leveling agent, a commercially available chemical commonly used for plating or electrolytic refining such as gelatin, polyethylene glycol, and cresol sulfonic acid is used. The smoothing agent added to the electrolytic solution in the cathode compartment does not adversely affect the plating quality even when mixed into the plating solution,
Alternatively, the same leveling agent as that added to the plating solution is desirable. A plurality of leveling agents may be used in combination.

【0015】本発明において、電解液の平滑化剤の濃度
は0.005g/リットル以上に制御するのが望ましい。その
理由は0.005g/リットル未満ではその効果が十分に得ら
れないためである。平滑化剤の濃度は5g/リットルを超えて
もその効果が飽和し不経済なため通常は5g/リットルを上限
とするのが望ましい。但し、スルホン酸類などで、それ
自体が酸としての役割を果たす平滑化剤はめっき液中に
大量に含まれることがあり、そのような場合は前記上限
にこだわる必要はない。平滑化剤は、めっき金属の析出
に伴って消費されるが、陰極でのめっき金属の析出の電
流効率は低いので、平滑化剤は0.005g/リットル以上の
添加量で十分な効果が期待できる。
In the present invention, the concentration of the leveling agent in the electrolytic solution is desirably controlled to 0.005 g / liter or more. The reason is that if the amount is less than 0.005 g / liter, the effect cannot be sufficiently obtained. Even if the concentration of the leveling agent exceeds 5 g / l, the effect is saturated and uneconomical, so that it is usually desirable to set the upper limit to 5 g / l. However, in some cases, the plating solution contains a large amount of a smoothing agent that itself plays a role of an acid, such as sulfonic acids, and in such a case, it is not necessary to stick to the upper limit. Although the leveling agent is consumed with the deposition of the plating metal, the current efficiency of the deposition of the plating metal at the cathode is low, so that a sufficient effect of the leveling agent is expected at an addition amount of 0.005 g / liter or more. it can.

【0016】平滑化剤に界面活性剤が含まれている場合
は、平滑化剤の消費に伴って電解液中の界面活性剤の量
が増し、攪拌により電解液が泡立って生成槽から溢れ出
て作業性が悪化する。このような場合は、界面活性剤を
含まない平滑化剤を併用するのが望ましい。
When the surfactant is contained in the leveling agent, the amount of the surfactant in the electrolytic solution increases with the consumption of the leveling agent, and the electrolytic solution foams by stirring and overflows from the production tank. Workability is deteriorated. In such a case, it is desirable to use a leveling agent containing no surfactant.

【0017】[0017]

〔めっき液生成槽〕(Plating solution generation tank)

陽極と陰極:ともに99.99 %純度のSn板。 陽イオン交換膜:セレミオンCMV(旭硝子(株)
製)。 陽イオン交換膜の有効面積: 1.0dm2 。 めっき液:硫酸80.0g/リットル、硫酸第一錫63.2g/リットル(錫
濃度35.0g/リットル)、平滑化剤(UTB−513Y、界面
活性剤含む、石原薬品(株)製)25.0g/リットル。めっき液
量 250ml。 電解液:硫酸80.0g/リットル、平滑化剤(上記UTB-513Y)
0.003〜10g/リットル。 電解液量 250ml。 〔めっき槽〕 陽極:PtめっきTi。 陰極:銅合金板。 めっき液:めっき液生成槽のと同じもの。
Anode and cathode: Sn plate with 99.99% purity. Cation exchange membrane: Selemion CMV (Asahi Glass Co., Ltd.)
Made). Effective area of cation exchange membrane: 1.0 dm 2 . Plating solution: 80.0 g / liter of sulfuric acid, 63.2 g / liter of stannous sulfate (35.0 g / liter of tin), 25.0 g / liter of leveling agent (UTB-513Y, including surfactant, manufactured by Ishihara Chemical Co., Ltd.) . Plating solution volume 250ml. Electrolyte solution: sulfuric acid 80.0 g / liter, leveling agent (UTB-513Y above)
0.003 to 10 g / liter. Electrolyte volume 250ml. [Plating bath] Anode: Pt plated Ti. Cathode: copper alloy plate. Plating solution: Same as in plating solution generation tank.

【0018】(実施例2)電解液のUTB−513Y濃
度を1.0g/リットル とし、さらに平滑化剤としてゼラチン
(界面活性剤含まず)を0.5g/リットル 添加した他は、実施
例1と同じ方法によりSnめっき液を生成し、このめっ
き液を用いて被めっき材にSnをめっきした。
Example 2 Same as Example 1 except that the concentration of UTB-513Y in the electrolytic solution was 1.0 g / liter and gelatin (without surfactant) was added as a leveling agent at 0.5 g / liter. A Sn plating solution was generated by the method, and Sn was plated on a material to be plated using the plating solution.

【0019】(比較例1)電解液に平滑化剤を添加しな
かった他は、実施例1と同じ方法によりSnめっき液を
生成し、このめっき液を用いて被めっき材にSnをめっ
きした。
(Comparative Example 1) An Sn plating solution was produced in the same manner as in Example 1 except that no leveling agent was added to the electrolytic solution, and Sn was plated on a material to be plated using this plating solution. .

【0020】実施例1、2および比較例1において、め
っき液を24時間連続して生成した後の陰極の表面性状
(平滑性と析出物の密度)を調べた。結果を表1に示
す。表1にはめっき液生成中の電解液の状況を併記し
た。
In Examples 1 and 2 and Comparative Example 1, the surface properties (smoothness and precipitate density) of the cathode after the plating solution was continuously produced for 24 hours were examined. Table 1 shows the results. Table 1 also shows the state of the electrolytic solution during the generation of the plating solution.

【0021】[0021]

【表1】 (注)※◎極めて良好、○良好、△やや劣るが実用上問題なし。 *UTB−513Yの他にさらにゼラチンを添加した。[Table 1] (Note) * ◎ Extremely good, ○ good, △ slightly poor, but no practical problem. * In addition to UTB-513Y, gelatin was further added.

【0022】表1より明らかなように、本発明例のNo.1
は平滑化剤の量がやや少ないため陰極表面の性状(平滑
性と析出物の密度)が若干低下した。No.2〜8 は平滑化
剤(UTB−513Y)が十分な量含まれているため、
陰極表面の性状が、良好か、極めて良好であった。この
うちNo.5〜7 はUTB−513Yの量が多いためそこに
含まれる表面活性剤が電解液中に溶けだして電解液に泡
立ちが生じた。特にNo.7は泡立ちが多く泡の除去に手間
取り作業性が悪化した。No.8は、No.5に較べてUTB−
513Yの量を減らし、その分、界面活性剤を含まない
ゼラチンを0.5g/リットル 添加したもので、陰極の表面性状
は極めて良好で、しかも電解液が泡立つこともなかっ
た。なお、前記No.1〜8 は析出物は樹枝状に成長しなか
ったため電解液の攪拌で析出物が剥離して陽イオン交換
膜が損傷することもなかった。一方、比較例のNo.9は電
解液に平滑化剤を添加しなかったため陰極表面にSnが
樹枝状に析出し、この樹枝状析出物は陽イオン交換膜を
突き破り(陰極と陽イオン交換膜との距離は55mm)
その先端は陽極室にまで達した。前記実施例で用いた陰
極には、Snが平滑で緻密に析出し、陽極としてそのま
ま再使用することができた。また前記実施例により生成
されためっき液は酸濃度が安定し、めっき槽では銅合金
板上にSnめっき層が良好に形成された。
As is clear from Table 1, No. 1 of the present invention example
However, the properties of the cathode surface (smoothness and density of precipitates) were slightly reduced because the amount of the smoothing agent was slightly small. Nos. 2 to 8 contain a sufficient amount of leveling agent (UTB-513Y),
The properties of the cathode surface were good or extremely good. Among them, Nos. 5 to 7 contained a large amount of UTB-513Y, and the surfactant contained therein was dissolved in the electrolytic solution, and foaming occurred in the electrolytic solution. In particular, No. 7 had a lot of foaming, and time-consuming workability for removing foam deteriorated. No.8 is UTB- compared to No.5.
The amount of 513Y was reduced and gelatin containing no surfactant was added by 0.5 g / liter. The surface properties of the cathode were extremely good, and the electrolyte solution did not foam. In addition, in the above Nos. 1 to 8, the precipitate did not grow in a dendritic manner, so that the precipitate was not peeled off by stirring of the electrolytic solution and the cation exchange membrane was not damaged. On the other hand, in Comparative Example No. 9, Sn was deposited in a dendritic manner on the cathode surface because no smoothing agent was added to the electrolytic solution, and the dendritic deposits penetrated the cation exchange membrane (the cathode and the cation exchange membrane). Is 55mm)
The tip reached the anode compartment. In the cathode used in the above example, Sn was deposited smoothly and densely, and could be reused as an anode. Further, the plating solution produced by the above example had a stable acid concentration, and the Sn plating layer was favorably formed on the copper alloy plate in the plating bath.

【0023】本発明は、隔膜が陽イオン交換膜の場合に
おいて、特に、その効果が発現されるが、隔膜が陰イオ
ン交換膜の場合にも相応の効果が得られるものである。
In the present invention, the effect is particularly exhibited when the membrane is a cation exchange membrane, but a corresponding effect can be obtained when the membrane is an anion exchange membrane.

【0024】[0024]

【発明の効果】以上に述べたように、本発明では、陰極
室内の電解液に平滑化剤を添加するので、電解液に混入
しためっき金属イオンは陰極上に平滑で緻密に析出し、
樹枝状に成長して陽イオン交換膜を破損するようなこと
がなく、めっき液が良好に安定して生成される。また使
用後の陰極は表面が平滑で緻密なのでそのまま陽極とし
て再使用でき経済的である。また隔膜に陽イオン交換膜
を用いる場合は、めっき液への陰イオンの混入が防止さ
れめっき液の酸濃度が安定し、従って酸の除去装置など
が不用で経済的である。
As described above, in the present invention, since the smoothing agent is added to the electrolytic solution in the cathode chamber, the plating metal ions mixed in the electrolytic solution are smooth and densely deposited on the cathode.
The plating solution is satisfactorily and stably formed without growing dendrites and damaging the cation exchange membrane. In addition, the cathode after use has a smooth and dense surface and can be reused as an anode as it is, which is economical. When a cation exchange membrane is used for the diaphragm, the anion is prevented from being mixed into the plating solution, and the acid concentration of the plating solution is stabilized. Therefore, an acid removing device is unnecessary and economical.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のめっき液生成方法の実施の形態を示す
説明図である。
FIG. 1 is an explanatory view showing an embodiment of a plating solution generating method of the present invention.

【図2】従来のめっき液生成方法の説明図である。FIG. 2 is an explanatory view of a conventional plating solution generation method.

【符号の説明】[Explanation of symbols]

1 めっき液生成槽 2 陽イオン交換膜 3 陽極室 4 陰極室 5 陽極室内のめっき液 6 陽極 7 陰極室内の電解液 8 陰極 9 循環パイプ 10 めっき槽 11 樹枝状析出物 12 めっき槽の陽極 13 被めっき材 REFERENCE SIGNS LIST 1 plating solution generating tank 2 cation exchange membrane 3 anode compartment 4 cathode compartment 5 plating solution in anode compartment 6 anode 7 electrolyte in cathode compartment 8 cathode 9 circulation pipe 10 plating tank 11 dendritic precipitate 12 anode of plating tank 13 coating Plating material

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 めっき液生成槽を隔膜で陽極室と陰極室
とに仕切り、陽極室内のめっき液中に配した陽極(めっ
き金属)と陰極室内の電解液中に配した陰極との間に電
流を流してめっき液中にめっき金属イオンを溶出させる
めっき液生成方法において、前記陰極室内の電解液に析
出平滑化剤を添加することを特徴とするめっき液の生成
方法。
1. A plating solution producing tank is partitioned by a diaphragm into an anode chamber and a cathode chamber, and between the anode (plating metal) disposed in the plating solution in the anode chamber and the cathode disposed in the electrolytic solution in the cathode chamber. What is claimed is: 1. A method for producing a plating solution, in which a plating current is eluted into a plating solution by passing an electric current, wherein a deposition smoothing agent is added to the electrolyte solution in the cathode chamber.
【請求項2】 隔膜が陽イオン交換膜であることを特徴
とする請求項1記載のめっき液の生成方法。
2. The method according to claim 1, wherein the diaphragm is a cation exchange membrane.
【請求項3】 陰極室内の電解液の析出平滑化剤の濃度
を0.005g/リットル以上にに制御することを特徴とする
請求項1または2記載のめっき液の生成方法。
3. The method for producing a plating solution according to claim 1, wherein the concentration of the deposition smoothing agent in the electrolytic solution in the cathode chamber is controlled to 0.005 g / liter or more.
JP1472198A 1998-01-28 1998-01-28 Formation of plating solution Pending JPH11209899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1472198A JPH11209899A (en) 1998-01-28 1998-01-28 Formation of plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1472198A JPH11209899A (en) 1998-01-28 1998-01-28 Formation of plating solution

Publications (1)

Publication Number Publication Date
JPH11209899A true JPH11209899A (en) 1999-08-03

Family

ID=11869006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1472198A Pending JPH11209899A (en) 1998-01-28 1998-01-28 Formation of plating solution

Country Status (1)

Country Link
JP (1) JPH11209899A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003002784A3 (en) * 2001-06-29 2004-07-01 De Nora Elettrodi Spa Electrolysis cell for restoring the concentration of metal ions in electroplating processes
JP2015036449A (en) * 2013-08-14 2015-02-23 石原ケミカル株式会社 Electric high purity tin or tin alloy plating bath and projection electrode formed by the plating bath

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003002784A3 (en) * 2001-06-29 2004-07-01 De Nora Elettrodi Spa Electrolysis cell for restoring the concentration of metal ions in electroplating processes
KR100954069B1 (en) 2001-06-29 2010-04-23 데 노라 엘레트로디 에스.피.에이. A cell for enrichment by anodic dissolution of a metal, an apparatus for the electroplating of metal comprising the same, and a process for the electroplating of a metal using the same
JP2015036449A (en) * 2013-08-14 2015-02-23 石原ケミカル株式会社 Electric high purity tin or tin alloy plating bath and projection electrode formed by the plating bath

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