JPH11186534A - Solid-state image pick-up device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device which has especially three layers of transfer electrodes, respectively provided with three-phase drive pulses of differing phases, capable of performing transfer at high-speed and being manufactured easily. SOLUTION: A transfer electrode 3 consists of a polycrystalline silicon layer of a third layer. A repetition unit T3 in the transfer direction of the transfer electrode 3 is twice the repetition units T1 and T2 in the transfer direction of transfer electrodes 1 and 2 of polycrystalline silicon layer of respectively the first layer and the second layer. The transfer electrode 3 of the polycrystalline silicon layer of the third layer is formed in a stripe form 3c perpendicular to the transfer direction by every other row or every two rows. The space of contact sections 11, 12 and 13 between the transfer electrodes 1, 2, and 3 which are respectively made of polycrystalline silicon layer and a shunt wiring is every other pixel in the direction of transfer to form a solid- state image pick-up device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a solid-state imaging device such as a CCD image sensor.

[0002]

2. Description of the Related Art Conventionally, a transfer electrode in a vertical register of a CCD solid-state imaging device, for example, has a conductor portion extending in the horizontal direction and an electrode portion projecting along the vertical register formed integrally by, for example, a polycrystalline silicon layer. Wiring is done.

As such a CCD solid-state imaging device, 3
An example of an all-pixel readout type CCD solid-state imaging device having transfer electrodes in layers and supplying drive pulses of three phases having different phases to each transfer electrode is shown.

FIG. 13 is a plan view showing a main part of an example of an all-pixel read-out type CCD solid-state imaging device, in particular, a wiring configuration of transfer electrodes in an image area formed by arranging light receiving portions (pixels) in a matrix. Is shown. Also, the patterns of the transfer electrodes 21, 22, 23 of each layer are shown in FIGS.
6 is shown.

As shown in FIG. 13, in this CCD solid-state imaging device, a transfer electrode 21 formed of a first polycrystalline silicon layer has a first conductive line extending in a horizontal direction between light receiving portions in a vertical direction. 21a, and a first electrode portion 21b protruding downward in the drawing along the vertical register (see the solid line). The transfer electrode 22 formed of the second polycrystalline silicon layer is the first electrode portion 21b. And a second electrode portion 22b protruding upward in the drawing along the vertical register (see the broken line).

The transfer electrode 23 formed of the third polycrystalline silicon layer has a third conductive line 23a extending in the horizontal direction on the second conductive line 22a and an odd number in the drawing along the vertical register. In the second column, the second electrode unit 2
The third first electrode portion 23b ₁ protruding further below the end portion of the second electrode portion 2b, and the third second electrode portion protruding further above the end portion of the second electrode portion 22b in the even-numbered rows. 23b
And a ₂ which (see dashed line).

In FIG. 13, reference numeral 24 denotes a light receiving section corresponding to a pixel, for example, a photodiode. Also, φ
1, φ2, φ3 are the first layers corresponding to each row,
This represents a three-phase driving pulse applied to a metal layer that will be a shunt wiring described later and that is in contact with the second or third layer transfer electrode.

However, in the conventional CCD solid-state imaging device, the first, second, and third conductor portions of each transfer electrode are wired on the space between the light receiving portions in the vertical direction. When the electrodes 21, 22, and 23 are formed by patterning, the misalignment must be taken into consideration.
It is necessary to reduce the width of the wirings a and 23a as they go to the upper layer. That is, the first, second and third conductor portions 21a,
22a, each wiring width at 23a W _1, W ₂ and W ₃
Then, it is necessary to satisfy the relationship of W ₁ > W ₂ > W ₃ .

As described above, since the wiring width W ₃ in the third conductive line portion 23a is the narrowest, the wiring resistance in the third conductive line portion 23a is increased, thereby causing a propagation delay of the drive pulse. The propagation delay of the drive pulse causes a charge failure and a charge transfer failure of the vertical register, and has a disadvantage of significantly deteriorating the image quality. In particular, when a drive pulse is supplied from the left and right ends of each of the transfer electrodes 21, 22, 23, a propagation delay of the drive pulse occurs in a central portion of the image area, and a defective handling charge or a poor charge transfer in the central portion occurs. Inconvenience.

In order to solve such a problem, a technique has been proposed in which three transfer electrodes are shunted with a metal film such as Al.

That is, in the case of the electrode arrangement of the transfer electrodes shown in FIG. 13, the transfer electrodes 21, 22, 22 are arranged along the vertical register.
23, a metal film 31 of Al or the like (FIG. 1) with an insulating film 30 interposed therebetween.
7 and FIG. 18), and the transfer electrodes 21, 22, 23 are formed by the contact portions 32, 33, and 34 shown in FIG.
And make an electrical connection. FIGS. 17A and 17B show PP in FIG. 13 when the metal film 31 is formed.
FIG. 18 is a cross-sectional view taken along line RR in FIG. 1.

In the case of FIG. 13, in the third column from the left, as shown in FIG. 17A, the transfer electrode (first electrode portion 21b) of the first layer and the metal film 31 are connected via the contact portion 32. And in the second column from the left, FIG.
As shown in FIG. 7B, the transfer electrode (third second electrode part 23b ₂ ) of the third layer and the metal film 31 are connected via the contact part 34.
In the leftmost and rightmost columns, the transfer electrode (second electrode portion 22b) of the second layer is connected to the metal film 31 via the contact portion 33 as shown in FIG. I have. In FIGS. 17 and 18, reference numeral 25 denotes a vertical register, and reference numeral 26 denotes a gate insulating film.

[0013]

However, even when this shunt is performed, the third conductive portion 23a of the transfer electrode 23 formed of the third polycrystalline silicon layer remains between the pixels in the same manner as described above. The transfer electrode 22 formed of the second polycrystalline silicon layer is on the second conductive line portion 22a,
Since the transfer electrode 22 of the second layer must be formed thinner than the second conductive portion 22a, the width of the transfer electrode 23 of the third layer at the corner between the pixels, that is, the portion surrounded by the dotted line in FIG. And the propagation delay also occurs, which causes problems such as a reduction in the amount of electric charges to be handled.

As a countermeasure, it is conceivable to increase the widths of the conductor portions 21a, 22a and 23a of each transfer electrode between pixels. In this case, however, the opening width of the light receiving portion 24 is reduced.
There is a problem that the sensitivity is reduced. Further, when the unit cell becomes finer, the space for the transfer electrode 23 in the third layer becomes narrower, and there is a problem that the processing becomes more difficult.

Further, especially in the contact portion 32 with the transfer electrode 21 of the first layer shown in FIG. 17A, a contact hole must be opened in the immediate vicinity where three layers of polycrystalline silicon layers are overlapped. As a result, the aspect ratio is increased, and miniaturization of the size of the contact portion 32 is also prevented.

In order to solve the above-mentioned problem, in the present invention, in particular, in a solid-state imaging device having three-layered transfer electrodes and supplying three-phase drive pulses having different phases to each transfer electrode, a high-speed solid-state imaging device is used. An object of the present invention is to provide a solid-state imaging device which can be transferred and easily manufactured.

[0017]

According to the solid-state imaging device of the present invention, the repetition unit in the transfer direction of the transfer electrode composed of the third polycrystalline silicon layer is shifted from the first and second polycrystalline silicon layers. Of the transfer direction of the transfer electrode
The transfer electrodes of the third layer are formed in stripes in the transfer direction in every other row or every other row in a direction perpendicular to the transfer direction. Is set every other pixel in the transfer direction.

According to the configuration of the present invention described above, the portion where the three-layered transfer electrode overlaps around the contact portion is eliminated and the number of layers is two or less, so that the aspect ratio of the contact hole is reduced. Conventionally, each third-layer transfer electrode is
Although the connection was made by a thin portion on the other transfer electrode in the direction perpendicular to the transfer direction, the connection was made by the stripe in the transfer direction. Processing for forming the transfer electrode can be easily performed.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, a transfer unit composed of a third polycrystalline silicon layer in the transfer direction is defined as 1 unit.
A transfer electrode composed of a third polycrystalline silicon layer is arranged in one row in a direction perpendicular to the transfer direction. Alternatively, the solid-state imaging device is formed in a stripe shape in the transfer direction every two columns, and the interval between the transfer electrode made of each polycrystalline silicon layer and the contact portion with the shunt wiring is set every other pixel in the transfer direction.

Further, in the solid-state imaging device according to the present invention, dummy rows in which no contact is made between the shunt wiring and the transfer electrode are provided every third row in a direction perpendicular to the transfer direction.

Hereinafter, embodiments of the solid-state imaging device according to the present invention will be described with reference to the drawings. The solid-state imaging device shown in FIG. 1 is a solid-state imaging device according to the first embodiment of the present invention.
FIGS. 2 to 4 are plan views showing a wiring configuration of transfer electrodes in an image area configured by arranging main parts of a CD solid-state imaging device, particularly, light receiving sections (pixels) in a matrix. FIG. 9 is a plan view illustrating a pattern of forming a transfer electrode of the first to third layers. FIG. 5A and FIG. 5B show A-
6A and 6B are cross-sectional views on line A and line BB.
FIG. 2 is a cross-sectional view taken along the line CC and the line DD in FIG. 1.

In this CCD solid-state imaging device, as shown in FIG. 1, a large number of light receiving sections 4 each composed of a photodiode are arranged in a matrix corresponding to pixels, and a three-layer multi-layer is provided on one side of each light receiving section 4 row. A vertical register 5 having transfer electrodes 1, 2, and 3 made of crystalline silicon is provided. Normally, three-phase driving pulses having different phases are supplied to each of the transfer electrodes 1, 2, and 3 to read all pixels. Functions as a CCD image sensor. In the drawings, the transfer electrodes 1, 2, and 3 are indicated by solid lines, broken lines, and alternate long and short dash lines, respectively. The transfer direction is the vertical direction in the figure, and the vertical register 5 is provided in this direction.

Referring to the cross-sectional structure, for example, as shown in FIG. 5, on a P-type well region (not shown) on an N-type silicon substrate, for example, a vertical A vertical register 5 formed of, for example, an N-type impurity diffusion region extending is arranged, and transfer electrodes 1, 2, and 3 formed of three polycrystalline silicon layers are formed on each vertical register 5.

In FIG. 1, the channel stopper region and the vertical transfer register are omitted. In FIG.
1, φ2, φ3 are the corresponding 1
A shunt A to be a shunt wiring to be described later, which is in contact with the transfer electrode 1, 2, or 3 of the first, second, or third layer
3 shows a three-phase drive pulse applied to the 1 pattern 8. 5 and 6, reference numeral 6 denotes a gate insulating film (in this embodiment, a three-layer structure of SiO ₂ , SiN, and SiO ₂ );
Reference numeral 7 denotes an interlayer insulating film.

Next, the formation pattern of each transfer electrode 1, 2, 3 will be described with reference to FIGS. In these figures, the area indicated by the broken line is the light receiving section 4.

First, as shown in FIG. 2, the transfer electrode 1 of the first layer includes a first conducting wire portion 1a extending in the horizontal direction between the light receiving portions 4 in the vertical direction and a vertical register, as shown in FIG. The first electrode portion 1b protrudes downward and corresponds to one pixel. In the transfer electrode 1 of the first layer, the repetition unit T ₁ in the transfer direction (vertical direction in the drawing) is set to T for each pixel of the light receiving unit 4.

As shown in FIG. 3, the transfer electrode 2 of the second layer is provided between the light receiving portions 4 in the vertical direction and the second conductive wire portion 2a extending in the horizontal direction, and the transfer electrode 2 is vertically upward along the vertical register. It is composed of a protruding second electrode part 2b. The transfer electrode 2 of the second layer also has a repeating unit T _{2 in the} transfer direction.
Is defined as T for each pixel of the light receiving unit 4.

As shown in FIG. 4, the third-layer transfer electrode 3 has a third conductive wire portion 3a extending in the horizontal direction between the light receiving portions 4 in the vertical direction and, for example, a vertical line in an odd-numbered column from the left. A third first electrode portion 3b protruding upward and downward in the drawing along the register, and formed in an even-numbered column from the left in a stripe shape in the vertical direction (transfer direction) in the drawing extending along the vertical register. Third electrode portion 3
c.

The third conductor portion 3a is disposed every other pixel.
That is, one pixel is provided for every two pixels, and is provided at the same row position for every two pixel columns. Accordingly, the transfer direction or the vertical direction repeating units T ₃ of the transfer electrode 3 of the third layer is twice the repeat unit T _1, T ₂ of the transfer direction of the first and second layers of the transfer electrodes (vertical direction) It is 2T. The third second electrode portion 3c formed in a stripe shape in the transfer direction is
It is provided every other row.

The conductors 1a, 1a,
2a and 3a consider the misalignment of patterning,
The width of each conductor is set to W ₁ > W ₂ > W ₃ .

Then, the transfer electrodes 1, 2 and 3 are laminated via the interlayer insulating film 7, respectively, and the shunts are further covered so as to cover the electrode portions 1b, 2b, 3b and 3c of the transfer electrodes 1, 2 and 3, respectively. By forming an Al pattern 8 for use (see FIGS. 5 and 6; not shown in FIG. 1) in the vertical direction along the vertical register, the pattern shown in FIG. 1 is completed.

The electrical connection between the transfer electrodes 1, 2, 3 and the shunt Al pattern 8 is made as follows.

That is, for example, in the leftmost column in FIG.
As shown in the cross-sectional view of FIG. 5A, the first electrode portion 1b in the transfer electrode 1 of the first layer is disposed every other pixel by the interlayer insulating film 7.
Is connected to the shunt Al pattern 8 through an opening 11 (corresponding to a contact portion) provided in the shunt.

In the second column from the left in FIG. 1, as shown in the sectional view of FIG. 5B, the third second electrode portion 3c of the third-layer transfer electrode 3 is disposed every other pixel. Opening (corresponding to contact portion) 13 provided in insulating film 7
To the shunt Al pattern 8 via. 3
In this column, the transfer electrodes 3 of the layer are formed so as to extend along the vertical register as shown in FIG. 1, and have a pattern of one repetition unit corresponding to one pixel.

In the third column from the left in FIG. 1, as shown in the cross-sectional view of FIG. 6A, the second electrode portion 2b of the second-layer transfer electrode 2 is disposed every other pixel by an interlayer insulating film. It is connected to the shunt Al pattern 8 through an opening (corresponding to a contact portion) 12 provided in the shunt 7.

Further, in the rightmost column in FIG.
As shown in the cross-sectional view of FIG. 6B, the connection between the third second electrode portion 3c of the third-layer transfer electrode 3 extending along the vertical register and the shunt Al pattern 8 is not performed. 8 is connected to, for example, the ground (ground potential) or the like. Hereinafter, the shunt Al pattern 8
That is, a column in which the so-called shunt wiring is not connected to the transfer electrodes 1, 2, 3 is called a dummy column.

Then, as shown in FIG. 1, the transfer electrode 3 made of the third polycrystalline silicon layer is repeated in the vertical direction (vertical direction) so that the waveform of each clock and the shape of each unit cell become equal. The unit T ₃ is, as described above, two pixels equal to one.
1 unit in 4 rows in the horizontal direction
It is preferable to provide dummy rows every three rows, that is, every third row.

According to the above-described embodiment, the width of the third-layer transfer electrode 3 at the end between the pixels 4 is not as narrow as in the conventional example of FIG. Since the above is ensured, it is not necessary to increase the width of each of the conductor portions 1a, 2a, 3a of the transfer electrode between pixels, and the light receiving portion 4 can be made wider, so that the sensitivity does not decrease. Since the space for the third-layer transfer electrode 3 can be widened, for example, by forming the third second electrode portion 3c having a stripe shape in the vertical direction, the unit cell can be miniaturized as compared with the conventional structure.

Further, since the number of polycrystalline silicon layers of the transfer electrodes around the contact portions 11, 12, and 13 is all two, the aspect ratio of the contact hole is reduced.
Processing of contact holes becomes easy. As a result, the size of the contact hole can be further reduced, and the unit cell can be miniaturized.

Next, FIG. 7 shows an actual repetition pattern of the transfer electrodes 1, 2, 3 in the configuration of FIG. 1, and FIG. 8 shows a pattern shape of the third-layer transfer electrode 3 in the pattern of FIG. . Contact parts 11, 12, 1 for shunt
Since 3 is thinned out at a ratio of one every two in the vertical direction, one repeating unit is formed in eight rows in the horizontal direction as shown in FIG. This pattern is the same as the pattern shown in FIG. 1 in four rows (the four rows on the left), and the transfer electrode pattern is the same in three rows.
The position of the contact portion 13 of the transfer electrode 3 of the layer is shown in FIGS.
This pattern is a combination of four patterns (four right rows) shifted in the vertical register direction by the number of pixels.

By repeating these eight columns, a solid-state imaging device having a large number of pixel columns can be configured such that the waveform of each clock and the shape of each unit cell are equal.

In the configuration shown in FIG.
FIG. 9 shows another repetition pattern of 2, 3 and FIG. 10 shows the pattern shape of the third-layer transfer electrode 3 in the pattern of FIG. This pattern includes four rows (the left four rows) identical to the pattern shown in FIG.
Are shifted in the vertical register direction by one pixel, and the positions of the contact portions 11, 12, and 13 of the transfer electrodes 1, 2, and 3 are shifted in the vertical register direction by one pixel in FIG. ).

Also in this pattern, similarly to the pattern shown in FIG. 7, a solid-state imaging device having a large number of pixel rows can be configured so that the waveform of each clock and the shape of each unit cell are equal.

Here, as another embodiment of the present invention,
This shows a case where a solid-state imaging device is configured without providing a dummy column. Transfer electrodes 1, 2, 3 of solid-state imaging device of the present embodiment
11 is shown in FIG. 11, and FIG. 12 shows a pattern shape of the third-layer transfer electrode 3 in the pattern of FIG. Since the shunt contact portions 11, 12, and 13 are thinned out at a ratio of one in two in the vertical direction, as shown in FIG. 11, one repeating unit is formed in six rows in the horizontal direction.

In the present embodiment, the third second electrode portion 3 extending along the vertical register of the third-layer transfer electrode 3
c is formed in every third row, that is, every third row. In the row where the third second electrode section 3c is not provided, the adjacent two rows of the third first electrode section 3b and the third conductor section 3a connected to the third first electrode 3b are formed in the same pattern. I have. The patterns of the first-layer transfer electrode 1 and the second-layer transfer electrode 2 are as follows.
This is the same as the embodiment of FIG.

In FIG. 11, the transfer electrodes 1, 2, 2 and 3 are arranged at the leftmost three rows and the fourth to sixth rows from the left.
The positions of the contact portions 11, 12, and 13 are shifted by one pixel in the vertical register direction.

Also in this pattern, as in the above-described embodiment, the third-layer transfer electrode 3 is ensured to have a width equal to or larger than the width of the third conductive portion 3a.
There is no need to increase the width of 2a, 3a, and the light receiving section 4 can be widened to secure sufficient sensitivity, the space for the third-layer transfer electrode 3 can be widened, and the aspect ratio of the contact hole can be reduced. Since the size can be reduced, there is an advantage that the unit cell can be miniaturized as compared with the conventional structure.

In the pattern without the dummy columns, the pattern of the third-layer transfer electrode 3 on both sides differs depending on the pixel. That is, in the pixel 4a in FIG. 11, the third-layer transfer electrodes 3 on the left and right sides are all the third transfer electrodes.
In the pattern of the first electrode portion 3b, the first electrode portion 3b does not reach the lower end of the pixel 4a but is interrupted on the way. On the other hand, in the pixel 4b in FIG. 11, the third-layer transfer electrode 3 on the left side is the third first electrode unit 3
In the pattern b, the transfer electrode 3 in the third layer on the right side is interrupted in the middle similarly to the pixel 4a, but is formed in the whole pixel in the pattern of the third second electrode portion 3c.

Therefore, the state of the transfer electrodes on both sides is different between the pixel 4a and the pixel 4b, whereby the height of the metal film (Al layer pattern 8) of the shunt wiring on the interlayer insulating film is different. . Therefore, the opening angles viewed from the light receiving unit 4 are different. Pixels 4 having different aperture angles as described above
If a and 4b coexist, the effective aperture area of the transfer electrode is different, so that a difference occurs in the sensitivity and the image may be affected.

On the other hand, in the configuration in which the dummy columns are provided as shown in FIG. 1, all the pixels 4 are the pixels of 4b in FIG. 11, that is, the transfer electrodes 3 of the third layer are formed on one side. 3, a pixel having a configuration in which the transfer electrode 3 of the third layer is formed on the other side by a pattern of the third electrode portion 3c on the other side. It has become. Therefore, since the aperture angle is the same for all pixels, there is no difference in characteristics.

The solid-state imaging device according to the present invention is not limited to the above-described embodiment, but may have various other configurations without departing from the gist of the present invention.

[0052]

According to the solid-state imaging device of the present invention described above, the width of the transfer electrode composed of the third polycrystalline silicon layer does not become narrow at the end between the pixels, so that the polycrystalline silicon layer between the pixels is not formed. It is not necessary to increase the width of the light receiving portion, and the light receiving portion can be widened to sufficiently secure the sensitivity. Further, since a space for the transfer electrode formed of the third polycrystalline silicon layer can be widened, the unit cell can be miniaturized as compared with the conventional structure.

Further, according to the present invention, all the transfer electrodes formed of the polycrystalline silicon layer around the contact hole for the shunt wiring are provided in two layers, so that the aspect ratio of the contact hole is reduced, and the processing of the contact hole is facilitated. Become. Therefore, the size of the contact hole can be further reduced, and the unit cell can be miniaturized.

Further, when dummy columns in which no contact is made between the shunt wiring and the transfer electrode are provided at every third column, the state of the openings around the pixels has the same pattern for each pixel, and thus the characteristics of the pixels vary. Does not occur.

[Brief description of the drawings]

FIG. 1 is an essential part of one embodiment of a solid-state imaging device according to the present invention;
FIG. 3 is a plan view showing a wiring state of transfer electrodes in an image area configured by arranging pixels in a matrix.

FIG. 2 is a plan view showing a pattern of a first-layer transfer electrode in FIG. 1;

FIG. 3 is a plan view showing a pattern of a second-layer transfer electrode in FIG. 1;

FIG. 4 is a plan view showing a pattern of a third-layer transfer electrode in FIG. 1;

FIG. 5 is a sectional view taken along line AA in FIG. 1; B It is sectional drawing on the BB line in FIG.

FIG. 6 is a sectional view taken along line CC in FIG. 1; B It is sectional drawing on the DD line in FIG.

FIG. 7 is a plan view showing one form of a repetitive pattern using the pattern of FIG.

8 is a plan view showing a pattern of a third-layer transfer electrode in FIG. 7;

FIG. 9 is a plan view showing another form of the repetitive pattern using the pattern of FIG.

FIG. 10 is a plan view showing a pattern of a third-layer transfer electrode in FIG. 9;

FIG. 11 is a plan view illustrating a main part of a solid-state imaging device according to another embodiment of the present invention, particularly a wiring state of transfer electrodes in an image area.

12 is a plan view showing a pattern of a third-layer transfer electrode in FIG. 11;

FIG. 13 is a plan view showing a main part of the solid-state imaging device, particularly, a wiring state of transfer electrodes in an image area.

FIG. 14 is a plan view showing a pattern of a first-layer transfer electrode in FIG. 13;

FIG. 15 is a plan view showing a pattern of a second-layer transfer electrode in FIG. 13;

16 is a plan view showing a pattern of a third-layer transfer electrode in FIG.

17 is a sectional view taken along the line PP in FIG. 13; FIG. B It is sectional drawing on the QQ line in FIG.

18 is a sectional view taken along line RR in FIG.

[Explanation of symbols]

1... First-layer (polycrystalline silicon) transfer electrode, 1
a: a first conductive wire portion, 1b: a first wiring portion, 2 ... a second-layer (polycrystalline silicon) transfer electrode, 2a ... a second conductive wire portion, 2b ... a second wiring portion, 3 ... 3rd transfer electrode (consisting of polycrystalline silicon), 3a... 3rd conductor part, 3b.
3rd first wiring section, 3c: third second wiring section, 4: pixel (light receiving section), 5: vertical register, 6: gate insulating film, 7
... Interlayer insulating film, 8 ... Al pattern for shunt, 11, 1
2, 13 contact part, 21 ... transfer electrode of first layer (made of polycrystalline silicon), 21a ... first conductor part, 21
b: first wiring portion, 22: transfer electrode of second layer (made of polycrystalline silicon), 22a: second conductive wire portion, 22b: second wiring portion, 23: third layer (polycrystalline silicon) ) Transfer electrode, 23a... Third conductor portion, 23b ₁ .
23b ₂ ... Third second wiring section, 24... Pixel (light receiving section), 25... Vertical register, 26... Gate insulating film, 30... Insulating film, 31. 34 ...
Contact part, W ₁ , W ₂ , W ₃ … width of conductive part of transfer electrode

Claims (2)

[Claims] 1. A transfer unit composed of a third layer of a polycrystalline silicon layer in the transfer direction of the transfer electrode is composed of 2 units of a transfer electrode composed of the first and second layers of the polycrystalline silicon layer in the transfer direction. Transfer electrodes made of the third polycrystalline silicon layer are formed in a stripe shape in the transfer direction every other row or every two rows in a direction perpendicular to the transfer direction. A solid-state imaging device, wherein a distance between a transfer electrode made of a shunt wiring and a contact portion is set at every other pixel in the transfer direction. 2. The solid-state imaging device according to claim 1, wherein dummy columns that do not make contact between the shunt wiring and the transfer electrode are provided every third column in a direction perpendicular to the transfer direction. .