JPH11177309A - Integrated circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent fluctuations of characteristic impedance before and after a metallic cap of an integrated circuit device is attached. SOLUTION: A power amplifier module includes a circuit board 1 where a microstrip line is formed, and a ground conductor 45 extending along a strip conductor 36 forming the microstrip line is prepared at a single side or both sides of the conductor 36. The width of the conductor 45 is equal to or larger than the width of the conductor 36, and the board 1 is covered with a conductive cap. Then a transistors are built into the board 1 at multiple stages to construct a transmitting part power amplifier that is used for a portable telephone set.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a personal digital cellular device.
The present invention relates to a technology that is effective when applied to a manufacturing technology of a transmission unit power amplifier (power amplifier module) for a mobile phone such as an electronic cellular (PDC).

[0002]

2. Description of the Related Art A GaAs power module in which GaAs FETs are incorporated in multiple stages is used as a power amplifier for a transmitter of a PDC (Personal Digital Mobile Phone).

[0003] For GaAs power modules, for example, "FUJITSU", 47,5,
PP.403-407 (09, 1996) and "Akita Technical Report" published by Akita Denshi Co., Ltd., 1995, Vol. 3, PP1-5.

The above-mentioned document discloses a structure in which a GaAs-FET is incorporated in two stages on a substrate constituting a microstrip line (line), and a resistor or a capacitor made of a chip component is mounted. The substrate is fixed on a heat sink, and the mounted components and the substrate are covered with a metal cap.

A microstrip line used at a high frequency is a kind of transmission line like a coaxial cable.
Microstrip line provided on the front surface (main surface) of the substrate and ground (layer) provided over the entire back surface of the substrate
Constitutes a low-pass filter in which capacitors are distributed in series with capacitors in parallel.

For a microstrip line, C
Q-publisher, "Transistor Technology", August 1992, P298
It is described in.

[0007]

Generally, a microstrip line has a strip conductor 36 on one surface (main surface) of a low-loss dielectric (dielectric layer) 35 as shown in FIG.
And a ground plane conductor (ground plane conductor layer) 37 on the back surface. In use, the ground plane conductor layer 37 becomes the ground 40.

The characteristic impedance of the microstrip line depends on the thickness and line width of the strip conductor 36, the dielectric 35
Is determined by the relative permittivity and thickness of the substrate. Therefore, the design of the characteristic impedance is performed by selecting the material of the strip conductor 36 and the dimensions of each part.

A portable telephone is used at a high frequency of about 800 MHz to 2 GHz. At high frequencies, the microstrip line has a circuit configuration having a capacitor 41 in parallel with a strip conductor 36 and a ground 40 and an inductor 42 in series, as shown in FIG.

In the design of a high-frequency power amplifier module, even if a thin line is made to obtain a predetermined inductor, if the line length is too long, the line becomes a capacitor. If the length is too long, it becomes an inductor, making circuit design difficult.

On the other hand, when manufacturing a high-frequency power amplifier module, when a circuit board on which a microstrip line is formed is shielded with a metal cap, it has been found that the characteristics of the microstrip line fluctuate before and after the cap is attached.

That is, the presence of a conductor near the microstrip line affects the inductance component. If the conductor is fixed, the characteristics do not fluctuate, but the characteristics change when a metal (conductive) cap is attached or removed for sealing.

It is an object of the present invention to provide an integrated circuit device in which characteristic impedance hardly fluctuates.

Another object of the present invention is to provide a power amplifier (power amplifier module) for a transmitting section of a portable telephone, in which the characteristic impedance hardly fluctuates.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0016]

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) An integrated circuit device having a circuit board on which a microstrip line is formed, wherein a ground conductor extending along the strip conductor is provided on one or both sides of a strip conductor constituting the microstrip line. Is provided. The width of the ground conductor is the same as or wider than the strip conductor. The circuit board is covered with a conductive cap. Transistors are incorporated in the circuit board in multiple stages to constitute a transmission power amplifier for a mobile phone.

(2) An integrated circuit device having a circuit board on which a microstrip line is formed, wherein the strip is provided at an intermediate portion of a dielectric between a ground plane conductor and a strip conductor constituting the microstrip line. A ground conductor is provided on one side or both sides of the conductor, and extends along the strip conductor. The width of the ground conductor is the same as or wider than the strip conductor. The circuit board is covered with a conductive cap. Transistors are incorporated in the circuit board in multiple stages to constitute a transmission power amplifier for a mobile phone.

(3) An integrated circuit device having a circuit board on which a microstrip line is formed, wherein a strip conductor constituting the microstrip line is located at an intermediate portion of a dielectric constituting the circuit board.
A ground conductor is provided along one or both sides of the strip conductor, and the ground conductor is at the same height as the strip conductor is provided, or one of an upper surface or a lower surface, or a combination thereof. And provided on each surface. The width of the ground conductor is the same as or wider than the strip conductor. The circuit board is covered with a conductive cap. Transistors are incorporated in the circuit board in multiple stages to constitute a transmission power amplifier for a mobile phone.

(4) In the configuration of the means (1) to (3), the circuit board is covered with a non-conductive cap, for example, a resin cap.

According to the means (1), (a) since the ground conductor extending along the strip conductor is provided on one or both sides of the strip conductor constituting the microstrip line, Has a configuration in which a capacitor is formed in parallel between the strip conductor and the ground conductor, and the potential is kept constant and the characteristic impedance is fixed. As a result, the microstrip line is less affected by the external conductor. Since the width of the ground conductor is equal to or wider than the width of the strip conductor, a predetermined capacitor is formed, and a variation in characteristic impedance can be suppressed.

(B) In manufacturing a high-frequency power amplifier module, the characteristic impedance does not fluctuate before and after the attachment of the metal cap, so that a high-frequency power amplifier module having a predetermined characteristic impedance can be manufactured.

According to the above-mentioned means (2), (a) an intermediate portion of the dielectric between the ground plane conductor and the strip conductor,
Since the ground conductor is provided on one side or both sides of the strip conductor and extends along the strip conductor, a capacitor is arranged in parallel between the strip conductor and the ground conductor in terms of a circuit. With this configuration, the potential is kept constant and the characteristic impedance is fixed. As a result, the microstrip line is less affected by the external conductor. Since the width of the ground conductor is equal to or wider than the width of the strip conductor, a predetermined capacitor is formed, and a variation in characteristic impedance can be suppressed.

(B) In manufacturing a high-frequency power amplifier module, the characteristic impedance does not fluctuate before and after the attachment of the metal cap, so that a high-frequency power amplifier module having a predetermined characteristic impedance can be manufactured.

(C) Since no ground conductors are provided on both sides of the strip conductor, power supply lines and other direct current and low frequency signal lines can be arranged on both sides of the strip conductor, thereby improving the margin of line design. .

According to the means (3), (a) the strip conductor is located at an intermediate portion of the dielectric constituting the circuit board, and the ground conductor is provided along one or both sides of the strip conductor. And the ground conductor is provided on the same surface as the height at which the strip conductor is provided, or on one of an upper surface or a lower surface, or a combination thereof. Therefore, in terms of a circuit, a capacitor is formed in parallel between the strip conductor and the ground conductor, the potential is kept constant, and the characteristic impedance is fixed. As a result, the microstrip line is less affected by the external conductor. Since the width of the ground conductor is the same as or wider than the strip conductor, a predetermined capacitor is formed, and fluctuation of the characteristic impedance can be suppressed.

(B) In manufacturing a high-frequency power amplifier module, the characteristic impedance does not fluctuate before and after the attachment of the metal cap, so that a high-frequency power amplifier module having a predetermined characteristic impedance can be manufactured.

According to the means (4), a predetermined capacitor is formed in parallel between the microstrip line and the ground conductor provided along the strip conductor.
Since the potential is kept constant and the characteristic impedance is fixed, there is no need to shield the microstrip line, and a resin cap that is less expensive than a metal cap can be used. Cost reduction can be achieved.

[0029]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) FIGS. 1 to 4 relate to an integrated circuit device (high-frequency power amplifier module) according to an embodiment (Embodiment 1) of the present invention.

FIG. 1 is a schematic perspective view showing a microstrip line on a circuit board of the high-frequency power amplifier module according to the first embodiment.

The microstrip line has a strip conductor 36 on one surface (main surface) of a dielectric 35 constituting a circuit board.
And a ground plane conductor (ground plane conductor layer) 37 on the back surface. However, the microstrip line of the first embodiment extends along both sides of the strip conductor 36 along the strip conductor 36. An existing ground conductor 45 is provided.

The ground conductor 45 is electrically connected to the ground plane conductor layer 37 via a conductor 46 filled in a through hole formed in the dielectric 35.

As a result, a capacitor is formed in parallel between the strip conductor 36 and the ground conductor 45, and the potential of the strip conductor 36 is kept constant. That is, the strip conductor 36 has a structure in which a capacitor is arranged in parallel with the ground plane conductor layer 37 on the lower surface side, and the ground conductor 45 is provided on both side surfaces of the strip conductor 36, so that Also, since the structure has a capacitor in parallel, the potential of the strip conductor 36 is constant, and the characteristic impedance does not easily change.

In order to form a capacitor surely, the width of the ground conductor 45 is the same as or wider than the strip conductor 36.

The ground conductor 45 is formed at the same time when the strip conductor 36 is printed.

The characteristic impedance of the microstrip line depends on the thickness and line width of the strip conductor 36, the dielectric 35
Is determined by the relative permittivity and thickness of the substrate. Therefore, the design of the characteristic impedance is performed by selecting the material of the strip conductor 36 and selecting the dimensions of the respective portions.

An example of the dimensional relationship of each part is as follows.

The dielectric 35 is an alumina ceramic plate having a thickness of 0.15 to 0.2 mm. Also,
The width of the strip conductor 36 is 0.1 to 0.3 mm.
The thickness of the strip conductor 36, the ground plane conductor layer 37, and the ground conductor 45 is 10 to several tens μm.

Next, an integrated circuit device (high-frequency power amplifier module) having a microstrip line having a ground conductor according to the first embodiment will be described.

The integrated circuit device (power amplifier module) 20 of the first embodiment is a rectangular flat body and has a cross-sectional structure as shown in FIG.

That is, the power amplifier module 20
As shown in FIG. 2, the circuit board 1 includes a rectangular circuit board (module board) 1 and a cap 21 attached so as to cover the electronic component mounting surface side of the module board 1.

The cap 21 is formed by bending and forming a conductive metal plate into a rectangular box shape.
And a side wall 23 protruding from the lower surface side of the peripheral edge of the ceiling plate 22. The cap 21 is, for example, 0.2
It is formed of a metal plate having a thickness of about mm.

The side wall 23 is parallel to the lower edge 2.
The slits are provided, and a tongue-shaped clamp piece 24 is provided. Two clamp pieces 24 are provided on at least two opposing side walls 23 of the ceiling plate 22. The clamp piece 24 is bent inward so as to elastically fit into a concave mounting portion 25 provided on the side surface of the module substrate 1. As a result,
The cap 21 is elastically attached to the module substrate 1 by the opposing clamp pieces 24.

The surface of the recessed mounting portion 25 is a ground wiring layer 26. The clamp piece 24
Are mechanically and electrically connected to the ground wiring layer 26 by solder 27. As a result, the module substrate 1 is electromagnetically shielded by the cap 21. The clamp piece 24 is connected to the ground wiring layer 2.
The solder 27 fixed to 6 is formed by, for example, applying cream solder or the like and reflowing.

The fixing structure between the cap 21 and the module substrate 1 may be fixed by an adhesive other than solder or mechanically fixed.

On the other hand, the module board (circuit board) 1
Is formed by laminating and firing a plurality of ceramic plates 2 having a predetermined pattern on a surface of which a copper paste is printed in a predetermined pattern, and has a multilayer wiring board structure.

The ceramic plate 2 is, for example, 0.15
mm, the thickness of conductors such as wiring and chip fixing pads is about 0.02 mm, and the diameter of through holes and thermal vias for electrically connecting upper and lower wiring etc. is 0.2 mm. It is about.

On the upper surface of the uppermost ceramic plate 2 of the module substrate 1, chip components 14 such as chip resistors and chip capacitors are mounted.

In the first embodiment, the module substrate 1
The semiconductor chip 17 has a structure in which a plurality of ceramic plates 2 are stacked, and a semiconductor chip 17 is fixed via an adhesive on a chip fixing pad 6 provided on the exposed lowermost ceramic plate 2.

The electrodes (not shown) of the semiconductor chip 17 and the wires 5 provided on the upper surface of the second-stage ceramic plate 2
Are connected by conductive wires 12.

The semiconductor chip 17 and the wire 12
And the like are covered with a sealing body 30 made of an insulating resin.

The power amplifier module 2 of the first embodiment
Numeral 0 denotes a transmission part power amplifier for a mobile phone by connecting a GaAs FET chip (semiconductor chip) 17 constituting a field effect transistor as an active component in multiple stages in a circuit. In the first embodiment, the power amplifier module has the semiconductor chip 17 connected in two stages in terms of circuit.

FIG. 4 is a circuit diagram showing an equivalent circuit of the power amplifier module according to the first embodiment, and FIG. 3 is a diagram showing a correlation between a mounting state of electronic components on the module substrate 1 and terminals.

As shown in FIG. 3, two GaAs FETs (Q
, Q2) are disposed, and chip resistors (R11, R1
2, R13, R21, R22), chip capacitor (C
11, C12, C21 to C25, C31 to C34, C4
1 to C43). In FIG. 3, reference numeral 10 denotes upper and lower connection conductors for connecting conductors of upper and lower wirings 5, chip fixing pads 6, electrode fixing pads 7, wire connection pads 8 and the like (see FIG. 2) of the ceramic plate 2.

As shown in FIG. 3, external terminals 50 for surface mounting are provided on four sides of the rectangular module substrate 1.

Of the external terminals 50, 51 are input terminals (P
in), 52 are first-stage drain terminals (Vd1), 53, 5
5, 57 and 59 are ground terminals (GND), 54 is a latter-stage drain terminal (Vd2), 56 is an output terminal (Pout),
58 is a gate bias terminal (Vg).

The double circle in the figure is a conductor 46 which is filled in the through hole and electrically connects a predetermined wiring.

In FIG. 3, a dotted part is a ground, and a hatched part is a strip conductor 36 constituting a microstrip line. The ground portions extending on both sides of the strip conductor 36 become the ground conductor 45.

As shown in the equivalent circuit of FIG.
The input terminal (Pin) 51 is connected to the gate of the AsFET (Q1).
Is connected, and the first-stage drain is connected to the second-stage GaAs FET.
(Q2).

The drain of the subsequent GaAs FET (Q2) is connected to the output terminal (Pout) 56.

The gate bias terminal (Vg) 58 is connected between the gate of the first-stage GaAs FET (Q1) and the second-stage GaAs FE.
It is connected to the gate of T (Q2).

The first-stage drain terminal (Vd1) 52 is connected to the drain of the first-stage GaAsFET (Q1), and the second-stage drain terminal (Vd2) 54 is connected to the drain of the second-stage GaAsFET (Q2).

In FIG. 4, S1 to S9 are microstrip lines.

A matching circuit is formed by a capacitor (C), a resistor (R), a microstrip line and the like arranged in each section.

In the first embodiment, a power amplifier module for a mobile phone of 800 to 1000 MHz is provided by incorporating GaAs FETs in two stages.
Hz power amplifier module for mobile phones.

In the manufacture of such a power amplifier module 20, after the module substrate (circuit board) 1 as shown in FIGS. 1 to 3 is manufactured, the semiconductor chip 17 is fixed, and chip components such as capacitors and resistors are manufactured. Perform mounting. Further, the electrodes of the semiconductor chip 17 and the respective wirings 5 are connected by the wires 12. The semiconductor chip 17 and the wire 12 are covered with the sealing body 30. Then, if necessary, the characteristic impedance is adjusted.

Next, the cap 21 is attached to the module substrate 1.
And the clamp piece 24 of the cap 21 is fixed to the ground wiring layer 26 on the side surface of the module substrate 1 with solder 27.

Thus, the power amplifier module 20 having the electromagnetic shield structure is manufactured.

According to the power amplifier module of the first embodiment, the following effects can be obtained.

(1) On the circuit board 1 of the high-frequency power amplifier module (integrated circuit device), a ground conductor 45 extending along the strip conductor 36 is provided on one or both sides of the strip conductor 36 constituting the microstrip line. As a result, a capacitor is formed in parallel between the strip conductor 36 and the ground conductor 45 in terms of a circuit. Therefore, the capacitor is formed between the strip conductor 36 and the ground plane conductor layer 37 by the capacitor, so that the potential is kept constant and the characteristic impedance is fixed. As a result, the microstrip line is less affected by the external conductor.

(2) According to (1), the characteristic impedance of the microstrip line does not change before and after the metal cap 21 is attached.

(3) Since the width of the ground conductor 45 is wider than that of the strip conductor 36, a predetermined capacitor is formed, and the variation of the characteristic impedance can be suppressed.

(4) In manufacturing a high-frequency power amplifier module (integrated circuit device), since the characteristic impedance does not change before and after the attachment of the metal cap, a high-frequency power amplifier module having a predetermined characteristic impedance is manufactured at a high yield. be able to. Therefore, the manufacturing cost of the high-frequency power amplifier module can be reduced.

(Embodiment 2) FIG. 5 is a schematic perspective view showing a microstrip line in a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 2) of the present invention.

In the second embodiment, in the structure of the first embodiment, one side of the strip conductor 36 is provided at an intermediate portion of the dielectric 35 between the ground plane conductor layer 37 and the strip conductor 36 constituting the microstrip line. Alternatively, ground conductors 45 located on both sides and extending along the strip conductor 36 are provided.
The width of the ground conductor 45 is the same as or wider than the strip conductor 36.

The dielectric 35 has a multilayer structure (ceramic plates 2a and 2b), and the ground conductor 45 is formed between the ceramic plates 2a and 2b.

That is, when the circuit board 1 as shown in FIG. 5 is formed by the dielectric 35, the ground conductor 45 is formed on the upper surface of the unfired ceramic plate on which the ground plane conductor layer 37 is formed on the lower surface. The ceramic plate before firing is formed by laminating and firing on the ceramic plate before firing having the strip conductor 36 formed on the upper surface.

In the case of the microstrip line of the second embodiment, capacitors are formed in parallel between the strip conductor 36 and the ground conductor 45 extending obliquely downward.
The electric potential is kept constant and the characteristic impedance is fixed, in combination with the fact that a capacitor is formed also with the ground plane conductor layer 37.

As a result, the microstrip line is less susceptible to the influence of the external conductor, and has the same effect as in the first embodiment.

In the second embodiment, since no ground conductor is provided on both sides of the strip conductor 36, a power supply line or other direct current or low frequency Since the signal lines can be arranged, the margin of the line design is improved.

(Embodiment 3) FIG. 6 is a schematic sectional view showing a microstrip line in a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 3) of the present invention.

The microstrip line according to the third embodiment has a structure in which a strip conductor 36 is disposed at an intermediate portion of a dielectric 35, and a ground conductor 45 extending along the strip conductor 36 is disposed on the dielectric 35. It has become.

In other words, in the third embodiment, the strip conductor 36 constituting the microstrip line is
A ground conductor 45 is provided along the one side or both sides of the strip conductor 36, which is located at an intermediate portion of the dielectric 35 constituting the circuit board 1, and the ground conductor 45 is provided at a height where the strip conductor 36 is provided. It is configured to be provided on a surface above it.

The width of the ground conductor 45 is the same as or wider than the strip conductor 36.

The dielectric 35 has a multilayer structure (ceramic plates 2a and 2b), the strip conductor 36 is provided between the ceramic plates 2a and 2b, and the ground conductor 45 is placed on the ceramic plate 2b. Is provided. A strip conductor 36 is provided along the center of the pair of ground conductors 45 when viewed in perspective.

In the case of the microstrip line of the third embodiment, capacitors are formed in parallel with the ground conductor 45 extending obliquely upward, and the strip conductor 36 is formed by these capacitors on the ground plane conductor layer. 37
Coupled with the formation of a capacitor between
The potential is kept constant, and the characteristic impedance is fixed.

As a result, the microstrip line is hardly affected by the external conductor, and the same effects as in the first and second embodiments can be obtained.

(Embodiment 4) FIG. 7 is a schematic sectional view showing a microstrip line in a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 4) of the present invention.

The microstrip line according to the fourth embodiment is the same as the microstrip line according to the third embodiment except that the strip conductor 3
6 has a structure in which ground conductors 45 are arranged on both sides.

In other words, in the fourth embodiment, the strip conductor 36 forming the microstrip line is
A ground conductor 45 is provided along the one side or both sides of the strip conductor 36, which is located at an intermediate portion of the dielectric 35 constituting the circuit board 1, and the ground conductor 45 is provided at a height where the strip conductor 36 is provided. It is configured to be provided on a surface above it.

The width of the ground conductor 45 is the same as or wider than the strip conductor 36.

The dielectric 35 has a multilayer structure (ceramic plates 2a and 2b), the strip conductor 36 is provided between the ceramic plates 2a and 2b, and the ground conductor 45 is provided on the ceramic plate 2b and It is provided between the ceramic plate 2a and the ceramic plate 2b.

In the case of the microstrip line of the fourth embodiment, a capacitor is formed in parallel between the ground conductor 45 extending obliquely upward and the ground conductor 45 on both sides of the strip conductor 36. The capacitor is formed between the strip conductor 36 and the ground plane conductor layer 37 by the capacitor, so that the potential is kept constant and the characteristic impedance is fixed.

As a result, the microstrip line is less susceptible to the influence of the external conductor, and has the same effects as those of the first to third embodiments.

In the fourth embodiment, the strip conductor 3
The distance between 6 and each ground conductor 45 may have a structure other than a structure in which the ground conductor 45 coincides and overlaps above the lower ground conductor 45 as shown in FIG.

In the fourth embodiment, the strip conductor constituting the microstrip line is located at an intermediate portion of the dielectric constituting the circuit board, and a ground conductor is provided along one or both sides of the strip conductor. And the ground conductor is provided on the same plane as the height at which the strip conductor is provided, or on one of an upper plane or a lower plane, or a combination thereof.

(Embodiment 5) FIG. 8 is a sectional view showing a high-frequency power amplifier module according to another embodiment (Embodiment 5) of the present invention.

Power Amplifier Module 2 of Embodiment 5
In the power amplifier module 20 of the first embodiment, the circuit board 1 is covered with a non-conductive cap, for example, a resin cap 21a. Cap 2
1a is formed of plastic and is fixed to the circuit board 1 by an adhesive 27a.

Note that the cap 21a may have another structure such as a detachable attachment to the circuit board 1 in a scratching structure utilizing the elasticity of plastic.

In the fourth embodiment, the microstrip line is a ground conductor 4 provided along the strip conductor 36.
5, a predetermined capacitor is formed in parallel,
Since the potential is kept constant and the characteristic impedance is fixed, there is no need to shield the microstrip line, and a resin cap that is less expensive than a metal cap can be used. Cost reduction can be achieved.

The invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist of the invention. Needless to say. Also,
The present invention is also applicable to integrated circuit devices other than the high-frequency power amplifier module.

[0103]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) In the microstrip line,
Since the ground conductor is provided on one side or both sides of the strip conductor, a capacitor is formed in parallel between the strip conductor, the ground plane conductor layer and the ground conductor, and the potential of the strip conductor becomes constant. Variations in characteristic impedance due to presence / absence are less likely to occur.

(2) Even if the cap constituting the sealing portion of the high-frequency power amplifier module is made of metal, the characteristic impedance of the microstrip line does not change depending on whether or not the cap is attached, so that the characteristic impedance is stabilized. . Therefore, the yield is improved in the manufacture of the high-frequency power amplifier module, and the product cost can be reduced.

(3) In the high-frequency power amplifier module, since it is not necessary to consider the shielding of the microstrip line portion, it is possible to seal with a non-conductive cap having no shielding effect, thereby reducing the product cost. Can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a microstrip line on a circuit board of a high-frequency power amplifier module according to an embodiment (Embodiment 1) of the present invention.

FIG. 2 is a cross-sectional view of the high-frequency power amplifier module according to the first embodiment.

FIG. 3 is a plan view of a circuit board of the high-frequency power amplifier module according to the first embodiment.

FIG. 4 is an equivalent circuit diagram of the high-frequency power amplifier module according to the first embodiment.

FIG. 5 is a schematic perspective view showing a microstrip line on a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 2) of the present invention.

FIG. 6 is a schematic sectional view showing a microstrip line on a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 3) of the present invention.

FIG. 7 is a schematic sectional view showing a microstrip line on a circuit board of a high-frequency power amplifier module according to another embodiment (Embodiment 4) of the present invention.

FIG. 8 is a sectional view of a high-frequency power amplifier module according to another embodiment (Embodiment 5) of the present invention.

FIG. 9 is a schematic perspective view showing a conventional microstrip line.

FIG. 10 is an equivalent circuit diagram of a conventional microstrip line.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Circuit board (module board), 2, 2a, 2b ... Ceramic plate, 3 ... Through-hole, 5 ... Wiring, 6 ... Chip fixing pad, 7 ... Electrode fixing pad, 8 ... Wire connection pad, 12 ... Wire, 14: Chip component, 17: Semiconductor chip, 20: Power amplifier module, 21, 21a
... cap, 22 ... ceiling plate, 23 ... side wall, 24 ... clamping piece, 25 ... mounting part, 26 ... ground wiring layer, 27 ... solder, 27a ... adhesive, 30 ... sealing body, 35 ... dielectric, 3
6 strip conductor, 37 ground plane conductor layer, 40 ground, 41 capacitor, 42 inductor, 45
Ground conductor, 46 conductor, 50 external terminal, 51 input terminal (Pin), 52 initial stage drain terminal (Vd1), 5
3, 55, 57: ground terminal (GND), 54: rear-stage drain terminal (Vd2), 56: output terminal (Pout),
58 gate bias terminal (Vg).

Claims (7)

[Claims] 1. An integrated circuit device having a circuit board on which a microstrip line is formed, wherein a ground conductor extending along the strip conductor is provided on one side or both sides of a strip conductor constituting the microstrip line. An integrated circuit device, which is provided. 2. An integrated circuit device having a circuit board on which a microstrip line is formed, wherein the strip conductor is provided at an intermediate portion of a dielectric between a ground plane conductor and the strip conductor constituting the microstrip line. And a ground conductor extending along the strip conductor on one or both sides of the integrated circuit device. 3. An integrated circuit device having a circuit board on which a microstrip line is formed, wherein a strip conductor forming the microstrip line is located at an intermediate portion of a dielectric forming the circuit board. A ground conductor is provided along one or both sides of the strip conductor, and the ground conductor is provided at the same plane as the height at which the strip conductor is provided, or at one of an upper plane or a lower plane, or a combination thereof. An integrated circuit device provided on each surface. 4. The integrated circuit device according to claim 1, wherein the width of the ground conductor is equal to or larger than the width of the strip conductor. 5. The integrated circuit device according to claim 1, wherein the circuit board is covered with a conductive cap. 6. The integrated circuit device according to claim 1, wherein the circuit board is covered with a non-conductive cap. 7. The integrated circuit according to claim 1, wherein a transistor is incorporated in the circuit board in multiple stages to constitute a power amplifier for a mobile phone. Circuit device.